Plasma processing device, end effector, edge ring and method thereof

Abstract

The present invention discloses a plasma processing device and its end effector, edge ring and method. A base for carrying wafers is provided in the reaction chamber of the plasma processing device; an edge ring arranged around the outer side of the base is provided with a receiving portion for cooperating with the end effector; the end effector includes a wafer carrying portion for carrying the wafer and an edge ring carrying portion for carrying the edge ring; the end effector passes through an opening in the wall of the reaction chamber to enter and exit the reaction chamber. The end effector of the plasma processing device in the present invention can simultaneously carry the wafer and the edge ring in and out of the reaction chamber, and can also carry the wafer in and out of the reaction chamber alone for wafer transfer, or carry the edge ring in and out of the reaction chamber alone for edge ring replacement. The present invention realizes the replacement of the edge ring without opening the reaction chamber, significantly improves the working efficiency of the equipment, saves a lot of manpower and time, and effectively reduces the use cost of the equipment.

Description

Technical Field

[0001] The present invention belongs to the technical field of plasma etching, and in particular relates to a plasma processing device and an end effector, an edge ring and a method thereof. Background Art

[0002] Plasma processing devices usually introduce reaction gases into a reaction chamber to generate plasma, which is used to perform plasma deposition, etching and other processes on wafers placed in the reaction chamber.

[0003] Due to the long-term plasma etching environment, the edge ring surrounding the base in the reaction chamber will gradually erode as the etching time increases, so the edge ring needs to be replaced regularly. The existing maintenance method requires opening the reaction chamber of the plasma processing device and manually replacing the edge ring. This process consumes a lot of manpower and time, reduces the working efficiency of the equipment, and increases the cost of equipment use. Summary of the invention

[0004] The present invention provides a plasma processing device and an end effector, an edge ring and a method thereof, which can carry the edge ring in and out of a reaction chamber through the end effector, and can replace the edge ring without opening the reaction chamber of the plasma processing device.

[0005] In order to achieve the above object, a technical solution of the present invention is to provide a plasma processing device, the plasma processing device comprising:

[0006] A reaction chamber, wherein a chamber wall of the reaction chamber is provided with an opening;

[0007] A base, located in the reaction chamber, for supporting the wafer;

[0008] An edge ring is arranged in the reaction chamber around the base; the edge ring is provided with a receiving portion;

[0009] An end effector passes through an opening in the reaction chamber wall to enter and exit the reaction chamber; the end effector comprises a wafer carrying portion and an edge ring carrying portion; the wafer carrying portion comprises a wafer carrying surface, through which the wafer is carried in and out of the reaction chamber; the edge ring carrying portion comprises an edge ring carrying surface, through which the edge ring carrying surface cooperates with the accommodating portion of the edge ring to carry the edge ring in and out of the reaction chamber.

[0010] Optionally, the edge ring supporting portion is located on both sides of the wafer supporting portion.

[0011] Optionally, when the end effector enters and exits the reaction chamber in a horizontal direction, the wafer bearing surface is not lower than the edge ring bearing surface.

[0012] Optionally, the end effector carries the wafer and the edge ring into and out of the reaction chamber simultaneously.

[0013] Optionally, the end effector carries the wafer or the edge ring into and out of the reaction chamber.

[0014] Optionally, the edge ring bearing portion penetrates into the receiving portion of the edge ring, and the edge ring bearing surface supports the edge ring.

[0015] Optionally, the edge ring bearing portion and the edge ring are provided with positioning mechanisms correspondingly, including:

[0016] The edge ring bearing surface is provided with a positioning pin, and the inner wall of the accommodating portion is provided with a positioning groove at a position corresponding to the positioning pin;

[0017] Alternatively, a positioning pin is provided on the inner wall of the accommodation portion, and a positioning groove is provided on the edge ring bearing surface at a position corresponding to the positioning pin;

[0018] Alternatively, magnets are provided inside the edge ring and the edge ring bearing portion, and at least the magnet inside the edge ring or the edge ring bearing portion is an electromagnet, and the magnetism of the electromagnet is controlled by switching on and off the current to achieve the taking and placing of the edge ring.

[0019] Optionally, the end effector enters and exits the reaction chamber at different heights by being raised or lowered.

[0020] Optionally, the edge ring is a focus ring.

[0021] Another technical solution of the present invention is to provide an end effector suitable for any one of the above-mentioned plasma processing devices; the end effector comprises an actuator body, the actuator body cooperates with an external mechanical arm, and the end effector is driven by the mechanical arm, characterized in that:

[0022] The end effector also includes a wafer bearing portion and an edge ring bearing portion;

[0023] The wafer carrying portion comprises a wafer carrying surface, through which the wafer is carried into and out of the reaction chamber of the processing device;

[0024] The edge ring bearing portion comprises an edge ring bearing surface, and the edge ring bearing surface cooperates with the receiving portion of the edge ring to carry the edge ring in and out of the reaction chamber of the processing device.

[0025] Optionally, the wafer carrying portion is arranged at an end of the actuator body away from the robot arm, and the edge ring carrying portions are respectively arranged on both sides of the wafer carrying portion.

[0026] Optionally, a first positioning mechanism is provided on the edge ring bearing portion, which cooperates with a corresponding positioning mechanism on the edge ring to perform positioning when taking and placing the edge ring.

[0027] Optionally, the first positioning mechanism includes: a positioning pin or a positioning groove arranged on the edge ring bearing surface, or a magnet arranged in the edge ring bearing portion.

[0028] Another technical solution of the present invention is to provide an edge ring, which is arranged around a base in a reaction chamber of any one of the above-mentioned plasma processing devices; the edge ring is provided with a receiving portion; the end effector of the processing device inserts the edge ring bearing portion into the receiving portion of the edge ring, and carries the edge ring in and out of the reaction chamber of the processing device by cooperating with the edge ring bearing surface and the receiving portion of the edge ring.

[0029] Optionally, the accommodation portion is an annular groove, or a discontinuous groove or a through hole.

[0030] Optionally, the accommodation portion is provided on the outer wall of the edge ring;

[0031] Alternatively, the accommodation portion is disposed on a second boss, and the second boss is located on the top surface of the edge ring;

[0032] Alternatively, the accommodating portion is located between a covering ring and a first boss, the covering ring is arranged below the first boss and around the edge ring; the first boss is located on the outer wall of the edge ring.

[0033] Optionally, a second positioning mechanism is provided on the edge ring, cooperating with a corresponding positioning mechanism on the edge ring bearing portion to perform positioning when taking and placing the edge ring.

[0034] Optionally, the positioning mechanism includes: a positioning pin or a positioning groove arranged on the inner wall of the accommodating portion, or a magnet arranged in the edge ring.

[0035] Another technical solution of the present invention is to provide a wafer processing method, which is applicable to any one of the above-mentioned plasma processing devices, and comprises the following steps:

[0036] The wafer is sent into the reaction chamber of the processing device by the end effector, and the wafer is subjected to plasma treatment in the reaction chamber; by monitoring the influence of the edge ring in the reaction chamber on the processing result of the wafer, or monitoring the degree of change in the geometric size of the edge ring after being eroded, it is determined whether to replace the edge ring;

[0037] The end effector enters the reaction chamber, and the edge ring is carried by the edge ring carrying part and / or the wafer carrying part carries the wafer;

[0038] The end effector withdraws from the reaction chamber, and moves the edge ring and the wafer out of the reaction chamber simultaneously, or moves the edge ring or the wafer out of the reaction chamber separately.

[0039] Another technical solution of the present invention is to provide an edge ring replacement method, which is applicable to any one of the above-mentioned plasma processing devices.

[0040] The process of removing the edge ring from the reaction chamber of the processing device comprises:

[0041] The external robot arm drives the end effector so that the edge ring bearing surface is located at the second height, the end effector passes through the opening on the reaction chamber wall in the horizontal direction and enters the reaction chamber, and the edge ring bearing portion penetrates into the accommodating portion of the edge ring; the end effector rises, and the edge ring bearing surface rises to the first height, so that the edge ring bearing surface carries the edge ring to lift the edge ring; the end effector carries the edge ring and passes through the opening on the reaction chamber wall in the horizontal direction and exits the reaction chamber;

[0042] The process of placing an edge ring into a reaction chamber of a processing device comprises:

[0043] The end effector carries the edge ring and the edge ring bearing surface is located at a first height. The end effector passes through the opening on the reaction chamber wall in a horizontal direction and enters the reaction chamber. The end effector is lowered and the edge ring bearing surface is lowered to a second height to place the edge ring in a position surrounding the periphery of the base. The end effector retreats in a horizontal direction, the edge ring bearing portion exits the edge ring accommodating portion, and the end effector exits the reaction chamber.

[0044] Optionally, the method further comprises taking the edge ring and the wafer out of the reaction chamber of the processing device at the same time:

[0045] The edge ring bearing surface is located at the second height, the end effector passes through the opening on the reaction chamber wall in the horizontal direction and enters the reaction chamber, the edge ring bearing portion penetrates into the accommodating portion of the edge ring, the wafer bearing portion is located below the wafer lifted by the ejector pin, the ejector pin is lowered, and the wafer falls on the wafer bearing surface; the end effector is raised, and the edge ring bearing surface is raised to the first height, so that the edge ring bearing surface carries the edge ring and lifts the edge ring, and the end effector carries the edge ring and the wafer and exits the reaction chamber in the horizontal direction.

[0046] Optionally,

[0047] The method further comprises placing the edge ring and the wafer into a reaction chamber of the processing device at the same time:

[0048] The end effector carries the edge ring and the wafer, and the edge ring bearing surface is located at a first height. The end effector passes through the opening on the reaction chamber wall in a horizontal direction and enters the reaction chamber; the end effector is lowered, and the edge ring bearing surface is lowered to a second height to place the edge ring in a position surrounding the periphery of the base; the ejector rises and lifts the wafer from the wafer bearing surface; the end effector retreats in a horizontal direction, the edge ring bearing portion exits the edge ring accommodating portion, and the end effector exits the reaction chamber; the ejector descends to place the wafer on the base.

[0049] Another technical solution of the present invention is to provide a wafer placement method, which is applicable to any one of the above-mentioned plasma processing devices.

[0050] The process of taking the wafer out of the reaction chamber of the processing device includes:

[0051] The edge ring bearing surface is located at a second height, the end effector passes through the opening on the reaction chamber wall in a horizontal direction and enters the reaction chamber, the edge ring bearing portion of the end effector penetrates into the receiving portion of the edge ring, the wafer bearing surface is located below the wafer lifted by the ejector pin, the ejector pin is lowered, and the wafer falls on the wafer bearing surface; the end effector retreats in a horizontal direction, the edge ring bearing portion exits the edge ring receiving portion, and the end effector carries the wafer and exits the reaction chamber;

[0052] The process of placing a wafer into a reaction chamber of the processing device includes:

[0053] The end effector carries the wafer and the edge ring bearing surface is located at a second height. The end effector passes through the opening on the reaction chamber wall in a horizontal direction and enters the reaction chamber. The edge ring bearing surface penetrates into the receiving portion of the edge ring. The ejector rises and lifts the wafer from the wafer bearing surface. The end effector retreats in a horizontal direction, the edge ring bearing portion exits the edge ring receiving portion, and the end effector exits the reaction chamber. The ejector descends to place the wafer on the base.

[0054] Compared with the prior art, the present invention has the following beneficial effects:

[0055] The end effector in the plasma processing device can carry the wafer and the edge ring in and out of the reaction chamber at the same time, and can also carry the wafer in and out of the reaction chamber alone for wafer transfer, or carry the edge ring in and out of the reaction chamber alone for edge ring replacement; the edge ring in the plasma processing device is provided with a receiving portion, which cooperates with the end effector to achieve replacement of the edge ring without opening the reaction chamber, thereby significantly improving the working efficiency of the equipment, saving a lot of manpower and time, and effectively reducing the use cost of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 is a longitudinal sectional view of an inductively coupled plasma processing apparatus;

[0057] Figure 2 is a partial enlarged view of a focusing ring in a plasma processing device;

[0058] Figure 3 It is a partial enlarged view of the focusing ring with a groove in the first embodiment in the plasma processing device;

[0059] Figure 4 A top view of the focusing ring with a groove in the first embodiment cooperating with the end effector;

[0060] Figure 5 It is a partial enlarged view of the focusing ring with a through hole in the plasma processing device in the first embodiment;

[0061] Figure 6 It is a partial enlarged view of the focusing ring provided with the first boss in the second embodiment in the plasma processing device;

[0062] Figure 7 It is a partial enlarged view of the focusing ring provided with the second boss in the third embodiment in the plasma processing device;

[0063] Figure 8 is a schematic structural diagram of the end effector described in Example 4;

[0064] Fig. 9 is a top view of the end effector in the plasma processing device described in the fourth embodiment;

[0065] Fig.10 for Fig. 9 A longitudinal section view of

[0066] Fig.11 for Fig.10 A partial enlarged view of

[0067] Fig.12 is a schematic structural diagram of the end effector described in Example 5;

[0068] Fig.13A top view of the end effector in the plasma processing device in the fifth embodiment;

[0069] Fig.14 for Fig.13 A longitudinal section view of

[0070] Fig.15 is a schematic structural diagram of the end effector described in Example 6;

[0071] Fig.16 is a top view of the end effector in the plasma processing device described in Example 6;

[0072] Fig.17 for Fig.16 A longitudinal section view of

[0073] Fig.18 It is a schematic diagram of the coordination structure between the end effector and the focusing ring provided with a positioning mechanism. DETAILED DESCRIPTION

[0074] See also Figure 1 As shown, the plasma processing device provided by the present invention is provided with a vacuum reaction chamber 100; an opening is provided on the chamber wall 150 of the reaction chamber, and the end effector 400 passes through the opening to enter and exit the reaction chamber 100 under the drive of an external mechanical arm (not shown in the figure); in the reaction chamber 100, a base 200 is provided at the bottom of the chamber to support and fix the wafer to be processed; at least one edge ring is provided around the base to adjust the temperature, airflow or plasma distribution of the wafer edge area, which has the function of improving the wafer processing performance of the plasma processing device. The edge ring includes at least one of a focusing ring, a covering ring, and an isolation ring. The following description takes the focusing ring as an example.

[0075] The plasma processing device provided by the present invention can be an inductively coupled plasma processing device (ICP device) or a capacitively coupled plasma processing device (CCP device). This article takes the ICP device as a specific embodiment to explain the device of the present invention in detail. Specifically, as shown in FIG1 , an opening is provided on the cavity wall 150 of the vacuum reaction chamber 100, and the end effector 400 passes through the opening to enter and exit the reaction chamber; a base 200 is provided at the bottom position of the vacuum reaction chamber 100 to support and fix the wafer to be processed; a focusing ring 300 is provided around the base 200; an insulating window 500 is provided at the upper end of the reaction chamber wall 150, and an inductively coupled coil 550 is provided above the insulating window 500; a gas injection port 600 is provided at the upper end of the reaction chamber wall 150 or at the center of the insulating window 500 to inject the reaction gas into the vacuum reaction chamber 100. The RF voltage of the RF power source is applied to the inductive coupling coil 550, which couples to generate an alternating electric field in the reaction chamber to excite the reaction gas to generate plasma; the inner side of the reaction chamber wall 150 is provided with an inner lining 650 to protect the reaction chamber wall 150 from being corroded by the plasma. The active particles in the plasma undergo physical and chemical reactions on the surface of the wafer to be processed, changing the morphology of the wafer surface and completing the etching process.

[0076] Figure 2 This is a partial enlarged view of the focusing ring in the plasma processing device. Figure 2 As shown, a lower grounding ring 700 and a shielding ring 750 are arranged below the focusing ring 300; wherein the lower grounding ring 700 is used to form a radio frequency grounding loop in the reaction chamber; the shielding ring 750 is used to shield the radio frequency signal applied to the base 200 in the base; and a covering ring 800 is arranged around the outer side of the focusing ring 300.

[0077] In order to achieve automatic replacement of the focus ring without opening the reaction chamber and improve the working efficiency of the equipment, in the plasma processing device provided by the present invention, the end effector 400 includes a wafer bearing part and a focus ring bearing part; the end effector 400 carries the wafer in and out of the reaction chamber 100 in the horizontal direction through the wafer bearing part, lifts the focus ring in the vertical direction through the focus ring bearing part, and removes the focus ring after entering or exiting the reaction chamber 100 in the horizontal direction. The focus ring bearing part is arranged on both sides of the wafer bearing part; the wafer bearing part further includes a wafer bearing surface for bearing the wafer; the focus ring bearing part further includes a focus ring bearing surface for bearing the focus ring 300; the wafer bearing surface is not lower than the focus ring bearing surface. The focus ring 300 is provided with a receiving part for cooperating with the focus ring bearing part. Specifically, the focus ring bearing part penetrates into the receiving part and carries the focus ring 300 through the focus ring bearing surface. The receiving part can be an annular groove structure, a discontinuous groove structure, or a through hole structure, but is not limited thereto, and is hereby explained.

[0078] The following is a detailed description of the arrangement of the accommodation portion of the focusing ring in the plasma processing device provided by the present invention, taking it as an example.

[0079] Embodiment 1

[0080] Figure 3 This is a partial enlarged view of the focusing ring with a groove in the plasma processing device in the first embodiment. Figure 3 As shown, the focusing ring 310 is arranged around the base 200, and a lower grounding ring 700 and a shielding ring 750 are arranged below the focusing ring 310; wherein the lower grounding ring 700 is used to form a radio frequency grounding loop in the reaction chamber; the shielding ring 750 is used to shield the radio frequency signal applied to the base 200 in the base; and a covering ring 800 is arranged around the outer side of the focusing ring 300.

[0081] like Figure 3 As shown, in this embodiment, an annular groove is provided on the outer wall of the focus ring 310 as a receiving portion 311; the end effector includes an edge ring bearing portion, which is a focus ring bearing portion a in this embodiment, which moves horizontally and penetrates into the annular groove. The focus ring bearing portion a is located on both sides of the focus ring 310, as shown in FIG. Figure 4 As shown, the end effector 400 is raised under the drive of the external mechanical arm 850, thereby lifting the focus ring 310 (as shown in FIG. Figure 3 The focus ring 310 moves along with the end effector 400. Figure 4 It is a top view of the focusing ring with a groove in the first embodiment cooperating with the end effector.

[0082] Alternatively, a groove is provided on the outer wall of both sides of the focus ring 310 as a receiving portion 311, and the groove is arranged along the circumferential direction of the focus ring wall; the focus ring bearing part a moves horizontally and penetrates into the corresponding groove section, and the focus ring bearing part is located on both sides of the focus ring 310 to achieve the cooperation between the focus ring and the end effector. The top view of the focus ring 310 with groove sections on both sides as receiving portions 311 and its cooperation with the end effector is also shown in FIG. Figure 4 shown.

[0083] The focus ring 310 in this embodiment can also be provided with through holes on the two side walls thereof as the accommodating parts 311, the through holes are arranged horizontally, corresponding to the horizontal movement direction of the end effector, and the focus ring bearing part a moves horizontally and penetrates into the corresponding through holes, such as Figure 5 As shown; the focus ring bearing portion a is located on both sides of the focus ring 310 to achieve the cooperation between the focus ring and the end effector. Figure 5 This is a partial enlarged view of the focusing ring with a through hole in the plasma processing device in Example 1.

[0084] Embodiment 2

[0085] Figure 6 FIG. 1 is a partial enlarged view of the focusing ring with the first boss in the second embodiment in the plasma processing device. Figure 6 As shown, in this embodiment, an annular first boss 322 is provided on the outer wall of the ring body of the focus ring 320, the first boss 322 extends out of the outer wall of the ring body of the focus ring and is located above the cover ring 800, and an annular gap is formed between the first boss 322 and the cover ring 800 as an accommodating portion 321; the focus ring bearing portion a moves horizontally and penetrates into the annular gap; the focus ring bearing portion a is located on both sides of the focus ring 320, and the end effector 400 is raised under the drive of the external robot arm 850, thereby lifting the focus ring 320 (as shown in FIG. Figure 6 The focus ring 320 moves along with the end effector 400 to achieve the coordination between the focus ring and the end effector.

[0086] Alternatively, a first boss 322 is provided on the outer walls on both sides of the focusing ring 320, and two gaps are formed between the covering ring 800 as accommodating portions 321. The focusing ring bearing portion a moves horizontally and penetrates into the corresponding gaps to achieve the cooperation between the focusing ring and the end effector, as shown in FIG6 .

[0087] In combination with the first embodiment and the second embodiment, in the first embodiment of the present invention, the groove serving as the accommodation portion may also be provided on the outer wall of the first boss.

[0088] Embodiment 3

[0089] Figure 7 FIG. 1 is a partial enlarged view of the focusing ring with the second boss in the plasma processing device in the third embodiment. Figure 7 As shown, in this embodiment, the top surface of the focusing ring 330 is provided with two second bosses 332, and the two second bosses 332 are distributed on both sides of the focusing ring 330 ( Figure 7 (Figure 2 is an enlarged view of the structure on one side), a through hole is formed on each second boss 332, and the through hole is arranged in the horizontal direction, corresponding to the horizontal movement direction of the end effector; the focus ring bearing part a moves horizontally and penetrates into the corresponding through hole, and the end effector 400 is raised under the drive of the external robot arm, thereby lifting the focus ring 330 (in the direction shown by the arrow in the figure), so that the focus ring 330 moves with the end effector 400, thereby realizing the coordination between the focus ring and the end effector.

[0090] The following is a detailed description of the focus ring bearing structure of the end effector in the plasma processing device provided by the present invention, taking it as an example.

[0091] Embodiment 4

[0092] Figure 8 FIG. 1 is a schematic diagram of the structure of the end effector described in Example 4. Figure 8 As shown, the end effector 410 in this embodiment includes an effector body 411 , one end of the effector body 411 is connected to an external robotic arm, and the end effector is driven by the robotic arm.

[0093] The end effector 410 further includes a wafer carrying portion 412; the wafer carrying portion 412 is disposed at one end of the actuator body 411 away from the robot arm, and its upper surface is used as a wafer carrying surface α1 for carrying a wafer. Figure 8 shown.

[0094] The end effector 410 further includes a focus ring bearing portion 413, and the focus ring bearing portion 413 is disposed on both sides of the wafer bearing portion 412. The focus ring bearing portion 413 further includes an insert 4130 and a connector 4131; the insert 4130 is used to penetrate into the receiving portion of the focus ring 300, and in this embodiment, the upper surface of the insert 4130 is the focus ring bearing surface β1 for bearing the focus ring; the connector 4131 is used to connect the insert 4130 and the wafer bearing portion 412.

[0095] In the focus ring bearing part 413 of the present embodiment, the front part of the connecting member 4131 and the insert 4130 form a groove-like structure, and the grooves of the focus ring bearing part 413 on both sides are arranged opposite to each other; the upper groove wall and the side wall of the groove structure belong to the connecting member 4131, and the rear part of the connecting member 4131 is an extension section of the upper groove wall, and the extension section is connected to one end of the wafer bearing part 412 in a curved arm type design, so that the focus ring bearing part 413 extends out of the wafer bearing part 412 and is distributed on both sides of the wafer bearing part 412; the lower groove wall of the groove structure serves as the insert 4130, and the focus ring bearing surface β1 is lower than the wafer bearing surface α1, and the end effector 410 is suitable for taking and placing wafers and / or focus rings in an inductively coupled plasma processing device (ICP device), or taking and placing wafers and / or focus rings in a capacitively coupled plasma processing device (CCP device).

[0096] In the ICP device or the CCP device, the end effector 410 in this embodiment is used to replace the focus ring 310 in the first embodiment in which a groove is provided as a receiving portion or the focus ring 320 in the second embodiment in which a first boss and a cover ring form a gap as a receiving portion; Fig. 9 It is a top view of the end effector in the plasma processing device in the fourth embodiment. When the wafer 900 is taken or placed, the wafer 900 is placed on the upper surface of the end effector 410; Fig.10 for Fig. 9 The cross-sectional view along the AA direction, i.e., the longitudinal cross-sectional view, shows that the wafer 900 is transferred between the end effector 410 and the base 200 by the lifting or lowering of the ejector pin 950 (described in detail below); Fig.11 for Fig.10 A partial enlarged view of .

[0097] Embodiment 5

[0098] The present invention does not limit the specific structure of the connecting piece, and it can be adjusted as needed in actual application.

[0099] Fig.12 FIG. 1 is a schematic diagram of the structure of the end effector in Embodiment 5. Fig.12 As shown, the end effector 420 in this embodiment includes an effector body 421, a wafer carrying portion 422 and a focus ring carrying portion 423; the wafer carrying portion 422 has an upper surface as a wafer carrying surface α2 for carrying a wafer.

[0100] The focus ring bearing portion 423 includes an insert 4230 and a connector 4231; the insert 4230 is used to penetrate into the receiving portion of the focus ring 300, and the insert 4230 has its upper surface as the focus ring bearing surface β2 for bearing the focus ring. Fig.12 shown.

[0101] The connecting piece 4231 is L-shaped, with an upper plate connected to the wafer supporting part 422, and a side plate facing downward and connected to the insert 4230. The focusing ring supporting surface β2 is lower than the wafer supporting surface α1. The end effector 420 is suitable for taking and placing wafers and / or focusing rings in an inductively coupled plasma processing device (ICP device), or taking and placing wafers and / or focusing rings in a capacitively coupled plasma processing device (CCP device).

[0102] In the ICP device or the CCP device, the end effector 420 in this embodiment is used to replace the focus ring 310 in the first embodiment in which a groove is provided as a receiving portion, or the focus ring 320 in the second embodiment in which a first boss and a cover ring are provided to form a gap as a receiving portion; Fig.13 A top view of the end effector in the plasma processing device in the fifth embodiment; Fig.14 for Fig.13 Longitudinal section view of .

[0103] Embodiment 6

[0104] Fig.15 FIG. 1 is a schematic diagram of the structure of the end effector in the sixth embodiment. Corresponding to the fourth embodiment, the end effector in this embodiment adjusts the wafer bearing part and the focus ring bearing part. Fig.15 As shown, one end of the actuator body 431 of the end actuator 430 in this embodiment is connected to an external robot arm, and the end actuator is driven by the robot arm; the other end of the actuator body 431 is connected to the wafer supporting part 432.

[0105] The wafer carrying portion 432 is L-shaped and includes a first portion 4320 and a second portion 4321. The first portion 4320 has an upper surface as a wafer carrying surface α3 for carrying a wafer. Fig.15 The first part 4320 and the actuator body 431 are connected via the second part 4321 .

[0106] The focus ring bearing part 433 is connected to the rear of the actuator body 431 in a curved arm type design, so that the focus ring bearing part 433 extends out of the actuator body and is distributed on both sides of the wafer bearing part 432; its front is a long strip type design, so as to penetrate into the focus ring accommodating part; the front part of the focus ring bearing part 433 has an upper surface which is a focus ring bearing surface β3, so as to bear the focus ring.

[0107] In this embodiment, the second part 4321 can be set vertically upward or obliquely upward, the first part 4320 is connected to the upper end of the second part 4321, and the actuator body 431 is connected to the lower end of the second part 4321. The first part 4320 is higher than the actuator body 431, and thus the wafer bearing surface α3 is higher than the focusing ring bearing surface β3. The end actuator 430 is suitable for taking and placing wafers and / or focusing rings in an inductively coupled plasma processing device (ICP device), or taking and placing wafers and / or focusing rings in a capacitively coupled plasma processing device (CCP device).

[0108] In this embodiment, the focus ring bearing portion 433 has a front strip design, which improves the matching ability between the end effector and the focus ring and has a wide range of applications. In an ICP device or a CCP device, the end effector 410 in this embodiment can be used to replace any of the focus rings described in embodiments 1, 2, and 3; Fig.16 is a top view of the end effector in the plasma processing device described in Example 6; Fig.17 for Fig.16 Longitudinal section view of .

[0109] The above is a detailed introduction to the focus ring and end effector structure in the plasma processing device provided by the present invention. In the present invention, the focus ring 300 and the end effector 400 are also provided with positioning mechanisms to facilitate the positioning of the end effector. Specifically, Fig.18 As shown, a positioning pin 1000 is provided on the focus ring bearing surface, and a positioning groove (not shown in the figure) is provided on the inner wall of the accommodating portion at a position corresponding to the positioning pin; or, a positioning pin 1000 is provided on the inner wall of the accommodating portion, and a positioning groove is provided on the focus ring bearing surface at a position corresponding to the positioning pin; or, a magnet is provided inside the focus ring, and an electromagnet is provided at a corresponding position inside the focus ring bearing portion, which has magnetism when energized and is attracted to the magnet, and the focus ring bearing portion picks up the focus ring, and when the electromagnet is de-energized, the magnetism disappears and is separated from the magnet, and the focus ring bearing portion puts down the focus ring; similarly, the focus ring is provided with an electromagnet inside and a magnet is provided at a corresponding position inside the focus ring bearing portion to achieve the above-mentioned effect. Fig.18 It is a schematic diagram of the coordination structure between the end effector and the focusing ring provided with a positioning mechanism.

[0110] During the process of processing a wafer by the plasma processing device provided by the present invention, the method of placing and picking up the wafer 900 by the end effector 400 is as follows:

[0111] The process of placing the wafer 900 into the reaction chamber 100 includes: adjusting the height of the end effector 400 by the outer wall robot arm, so that when the end effector 400 enters the reaction chamber 100, the wafer support part will be located above the base 200, and the focus ring support part can horizontally penetrate the accommodation part of the focus ring; placing the wafer 900 on the wafer support surface, and the end effector 400 carries the wafer 900 and passes through the opening on the reaction chamber wall 150 in the horizontal direction and enters the reaction chamber wall 150; The focus ring bearing part passes through the focusing ring accommodating part, the ejector pin 950 rises and lifts the wafer 900 from the wafer bearing surface; the end effector 400 retreats in the horizontal direction to make the focus ring bearing part withdraw from the focusing ring accommodating part, and the end effector 400 withdraws from the reaction chamber 100; the ejector pin 950 descends to place the wafer 900 on the base 200, and the end effector 400 places the wafer 900 into the processing device.

[0112] The process of taking the wafer 900 out of the reaction chamber 100 includes: in the reaction chamber 100, the ejector pin 950 is raised to lift the wafer 900 on the base 200; the height of the end effector 400 is adjusted by the outer wall robot arm so that the end effector 400 enters the reaction chamber 100; When the wafer 900 is lifted up, the wafer supporting part will be located between the base 200 and the lifted wafer 900, and the focus ring supporting part can horizontally penetrate into the accommodating part of the focus ring; the end effector 400 passes through the opening on the reaction chamber wall 150 in the horizontal direction and enters the reaction chamber 100, and the focus ring supporting part of the end effector 400 penetrates into the accommodating part of the focus ring, and the wafer supporting surface is located below the wafer 900 lifted up by the ejector pins, the ejector pins 950 are lowered, and the wafer 900 falls on the wafer supporting surface; the end effector 400 retreats in the horizontal direction, the focus ring supporting part exits the focus ring accommodating part, the end effector 400 carries the wafer 900 and exits the reaction chamber 100, and the end effector 400 takes the wafer 900 out of the processing device.

[0113] The wafer 900 is delivered into the reaction chamber 100 of the processing device through the end effector 400, and the wafer 900 is subjected to plasma treatment in the reaction chamber 100; the influence of the focusing ring 300 in the reaction chamber on the processing result of the wafer 900 is monitored, or the degree of geometric dimension change of the focusing ring 300 after being corroded is monitored to determine whether to replace the focusing ring 300; if the processing result of the wafer 900 is good or the geometric dimension change of the focusing ring 300 is small, it is not necessary to replace the focusing ring 300 for the time being; if the processing result of the wafer 900 does not meet the requirements or the geometric dimension change of the focusing ring 300 is obvious, it is necessary to replace the focusing ring 300 in time.

[0114] The plasma processing device provided by the present invention has an end effector 400 that matches the focus ring 300, and can replace the focus ring 300 without opening the reaction chamber; the method for replacing the focus ring 300 with the end effector 400 is as follows:

[0115] The process of taking the focus ring 300 out of the reaction chamber 100 includes: an external robotic arm adjusts the height of the end effector 400 so that when the end effector 400 enters the reaction chamber 100, the focus ring bearing portion can horizontally penetrate into the accommodating portion of the focus ring; the end effector 400 horizontally passes through the opening on the reaction chamber wall 150 and enters the reaction chamber 100, and the focus ring bearing portion penetrates into the accommodating portion of the focus ring; the end effector 400 is raised so that the focus ring bearing surface carries the focus ring and lifts the focus ring, and the focus ring 300 is located above the upper surface of the base 200; the end effector 400 carries the focus ring 300 and passes through the opening on the reaction chamber wall 150 in a horizontal direction and exits the reaction chamber 100, and the end effector 400 takes the focus ring 300 out of the processing device.

[0116] The process of placing the focusing ring 300 into the reaction chamber 100 includes: the outer wall robot arm adjusts the height of the end effector 400 so that when the end effector 400 enters the reaction chamber 100, the carried focusing ring 300 can be located above the upper surface of the base 200; the focusing ring bearing portion penetrates into the accommodating portion of the focusing ring, and the end effector 400 carries the focusing ring through the opening on the reaction chamber wall 150 in the horizontal direction and enters the reaction chamber 100; the end effector 100 is lowered to place the focusing ring 300 in a position surrounding the periphery of the base; the end effector 400 retreats in the horizontal direction, the focusing ring bearing portion withdraws from the focusing ring accommodating portion, the end effector 400 withdraws from the reaction chamber 100, and the end effector 400 places the focusing ring 300 into the processing device.

[0117] The plasma processing device provided by the present invention has an end effector 400 matched with the focus ring 300, which can take and place the wafer or the focus ring separately, and can also take the focus ring 300 and the wafer 900 out of or into the processing device at the same time without opening the reaction chamber; the method for taking the focus ring 300 and the wafer 900 out of the reaction chamber 100 at the same time by the end effector 400 is as follows:

[0118] In the reaction chamber 100, the ejector pin 950 is lifted up, thereby lifting the wafer 900 on the base 200; the outer wall robot arm adjusts the height of the end effector 400 so that when the end effector 400 enters the reaction chamber 100, the wafer bearing part will be located between the base 200 and the lifted wafer 900, and the focus ring bearing part can horizontally penetrate the accommodating part of the focus ring; the end effector 400 The wafer 900 is placed on the wafer carrying surface; the end effector 400 is raised so that the focus ring carrying surface carries the focus ring 300 and lifts the focus ring 300. The focus ring 300 is located above the upper surface of the base 200; the end effector 400 carries the focus ring 300 and the wafer 900 and exits the reaction chamber 100 in the horizontal direction. The end effector 400 takes the focus ring 300 and the wafer 900 out of the processing device at the same time.

[0119] The plasma processing device provided by the present invention has an end effector 400 disposed therein, and a method for simultaneously placing the focusing ring 300 and the wafer 900 into the reaction chamber 100 is as follows:

[0120] The wafer 900 is placed on the wafer carrying surface, and the focus ring carrying part is inserted into the receiving part of the focus ring; the external robot arm adjusts the height of the end effector 400 so that when entering the reaction chamber 100, the focus ring 300 is located above the upper surface of the base 200; the end effector 400 carries the focus ring 300 and the wafer 900 through the opening on the reaction chamber wall 150 in the horizontal direction and enters the reaction chamber 100; the end effector 400 is lowered, and the focus ring 300 is 0 is placed at a position surrounding the periphery of the base 200; the ejector pins 950 are raised and lift the wafer 900 from the wafer carrying surface; the end effector 400 retreats in a horizontal direction, the focus ring carrying part exits the focus ring accommodating part, and the end effector 400 exits the reaction chamber 100; the ejector pins 950 descend and place the wafer 900 on the base 200, and the end effector 400 places the focus ring 300 and the wafer 900 into the processing device at the same time.

[0121] The focusing ring structure described above is also applicable to other edge rings arranged around the base. When a certain edge ring needs to be replaced regularly or irregularly, a focusing ring accommodating portion as described above can be provided on the edge ring, and cooperate with the end effector described above to realize automatic switching of the edge ring without opening the reaction chamber.

[0122] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A plasma processing device, characterized in that: The processing device comprises: A reaction chamber, wherein a chamber wall of the reaction chamber is provided with an opening; A base, located in the reaction chamber, for supporting the wafer; An edge ring is arranged around the base in the reaction chamber; the edge ring is provided with a receiving portion; an end effector enters and exits the reaction chamber through an opening in the reaction chamber wall; the end effector includes a wafer carrying portion and an edge ring carrying portion; the wafer carrying portion includes a wafer carrying surface, through which the wafer is carried in and out of the reaction chamber; the edge ring carrying portion includes an edge ring carrying surface, through which the edge ring carrying surface cooperates with the receiving portion of the edge ring to carry the edge ring in and out of the reaction chamber; the edge ring carrying portion is located on both sides of the wafer carrying portion; the end effector can carry the wafer and the edge ring in and out of the reaction chamber at the same time; the end effector enters and exits the reaction chamber in a horizontal direction, and the wafer carrying surface is not lower than the edge ring carrying surface.

2. The plasma processing device according to claim 1, characterized in that: The end effector carries the wafer or the edge ring into and out of the reaction chamber.

3. The plasma processing device according to claim 1 or 2, characterized in that: The edge ring bearing portion penetrates into the receiving portion of the edge ring, and the edge ring bearing surface supports the edge ring.

4. The plasma processing apparatus according to claim 3, wherein: The edge ring bearing portion and the edge ring are provided with positioning mechanisms correspondingly, including: The edge ring bearing surface is provided with a positioning pin, and the inner wall of the accommodating portion is provided with a positioning groove at a position corresponding to the positioning pin; Alternatively, a positioning pin is provided on the inner wall of the accommodation portion, and a positioning groove is provided on the edge ring bearing surface at a position corresponding to the positioning pin; Alternatively, magnets are provided inside the edge ring and the edge ring bearing portion, and at least the magnet inside the edge ring or the edge ring bearing portion is an electromagnet, and the magnetism of the electromagnet is controlled by switching on and off the current to achieve the taking and placing of the edge ring.

5. The plasma processing apparatus according to claim 1, wherein: The end effector enters and exits the reaction chamber at different heights by being raised or lowered.

6. The plasma processing apparatus according to claim 1, wherein: The edge ring is a focus ring.

7. An end effector, used in the plasma processing device according to any one of claims 1 to 6, comprising an actuator body, wherein the actuator body cooperates with an external mechanical arm, and the end effector is driven by the mechanical arm, characterized in that: The end effector also includes a wafer bearing portion and an edge ring bearing portion; The wafer carrying portion comprises a wafer carrying surface, through which the wafer is carried into and out of the reaction chamber of the processing device; The edge ring bearing portion comprises an edge ring bearing surface, and the edge ring bearing surface cooperates with the receiving portion of the edge ring to carry the edge ring in and out of the reaction chamber of the processing device.

8. The end effector according to claim 7, characterized in that: The wafer carrying portion is arranged at an end of the actuator body away from the robot arm, and the edge ring carrying portions are respectively arranged on both sides of the wafer carrying portion.

9. The end effector according to claim 7, characterized in that: The edge ring bearing portion is provided with a first positioning mechanism, which cooperates with a corresponding positioning mechanism on the edge ring to perform positioning when taking and placing the edge ring.

10. The end effector according to claim 9, characterized in that: The first positioning mechanism includes: a positioning pin or a positioning groove arranged on the edge ring bearing surface, or a magnet arranged in the edge ring bearing portion.

11. An edge ring, arranged around a base in a reaction chamber of a plasma processing device according to any one of claims 1 to 6, characterized in that: The edge ring is provided with a receiving portion; the end effector of the processing device inserts the edge ring bearing portion into the receiving portion of the edge ring, and carries the edge ring in and out of the reaction chamber of the processing device by cooperating with the edge ring bearing surface and the receiving portion of the edge ring.

12. The edge ring according to claim 11, wherein: The accommodation portion is an annular groove, or a discontinuous groove or a through hole.

13. The edge ring of claim 11, wherein: The receiving portion is provided on the outer wall of the edge ring; Alternatively, the accommodating portion is arranged on a second boss, and the second boss is located on the top surface of the edge ring; alternatively, the accommodating portion is located between a covering ring and a first boss, and the covering ring is arranged below the first boss and around the edge ring; the first boss is located on the outer wall of the edge ring.

14. The edge ring of claim 11, wherein: The edge ring is provided with a second positioning mechanism, which cooperates with a corresponding positioning mechanism on the edge ring bearing portion to perform positioning when taking and placing the edge ring.

15. The edge ring of claim 14, wherein: The positioning mechanism includes: a positioning pin or a positioning groove arranged on the inner wall of the accommodating portion, or a magnet arranged in the edge ring.

16. A wafer processing method, applicable to the plasma processing apparatus according to any one of claims 1 to 6, characterized in that: The steps include: The wafer is sent into the reaction chamber of the processing device by the end effector, and the wafer is subjected to plasma treatment in the reaction chamber; by monitoring the influence of the edge ring in the reaction chamber on the processing result of the wafer, or monitoring the degree of change in the geometric size of the edge ring after being eroded, it is determined whether to replace the edge ring; The end effector enters the reaction chamber, and the edge ring is carried by the edge ring carrying part and / or the wafer carrying part carries the wafer; The end effector withdraws from the reaction chamber, and the edge ring and the wafer are simultaneously moved out of the reaction chamber, or the edge ring or the wafer is moved out of the reaction chamber separately.

17. A method for replacing an edge ring, applicable to the plasma processing device according to any one of claims 1 to 6, characterized in that: The process of removing the edge ring from the reaction chamber of the processing device comprises: The external robot arm drives the end effector so that the edge ring bearing surface is located at the second height, the end effector passes through the opening on the cavity wall of the reaction chamber in the horizontal direction and enters the reaction chamber, and the edge ring bearing portion penetrates into the accommodating portion of the edge ring; the end effector is raised, and the edge ring bearing surface is raised to the first height, so that the edge ring bearing surface carries the edge ring to lift the edge ring; the end effector carries the edge ring and passes through the opening on the cavity wall of the reaction chamber in the horizontal direction and exits the reaction chamber; The process of placing an edge ring into a reaction chamber of a processing device comprises: The end effector carries the edge ring and the edge ring bearing surface is located at a first height. The end effector passes through the opening on the cavity wall of the reaction chamber in a horizontal direction and enters the reaction chamber. The end effector is lowered and the edge ring bearing surface is lowered to a second height to place the edge ring in a position surrounding the periphery of the base. The end effector retreats in a horizontal direction, the edge ring bearing portion exits the edge ring accommodating portion, and the end effector exits the reaction chamber.

18. The edge ring replacement method according to claim 17, wherein: The method further comprises the step of simultaneously removing the edge ring and the wafer from the reaction chamber of the processing device: The edge ring bearing surface is located at the second height, the end effector passes through the opening on the cavity wall of the reaction chamber in the horizontal direction and enters the reaction chamber, the edge ring bearing portion penetrates into the accommodating portion of the edge ring, the wafer bearing portion is located below the wafer lifted by the ejector pin, the ejector pin is lowered, and the wafer falls on the wafer bearing surface; the end effector is raised, and the edge ring bearing surface is raised to the first height, so that the edge ring bearing surface carries the edge ring and lifts the edge ring, and the end effector carries the edge ring and the wafer and exits the reaction chamber in the horizontal direction.

19. The edge ring replacement method according to claim 17, wherein: The method further comprises placing the edge ring and the wafer into a reaction chamber of the processing device at the same time: The end effector carries the edge ring and the wafer, and the edge ring bearing surface is located at a first height. The end effector passes through the opening on the cavity wall of the reaction chamber in a horizontal direction and enters the reaction chamber; the end effector is lowered, and the edge ring bearing surface is lowered to a second height to place the edge ring in a position surrounding the periphery of the base; the ejector rises and lifts the wafer from the wafer bearing surface; the end effector retreats in a horizontal direction, the edge ring bearing part withdraws from the edge ring accommodating part, and the end effector withdraws from the reaction chamber; the ejector descends to place the wafer on the base.

20. A wafer placement method, applicable to the plasma processing device according to any one of claims 1 to 6, characterized in that: The process of taking the wafer out of the reaction chamber of the processing device includes: The edge ring bearing surface is located at a second height, the end effector passes through the opening on the cavity wall of the reaction chamber in a horizontal direction and enters the reaction chamber, the edge ring bearing portion of the end effector penetrates into the receiving portion of the edge ring, the wafer bearing surface is located below the wafer lifted by the ejector pin, the ejector pin is lowered, and the wafer falls on the wafer bearing surface; the end effector retreats in a horizontal direction, the edge ring bearing portion exits the edge ring receiving portion, and the end effector carries the wafer and exits the reaction chamber; The process of placing a wafer into a reaction chamber of the processing device includes: The end effector carries the wafer, and the edge ring bearing surface is located at a second height. The end effector passes through the opening on the wall of the reaction chamber in a horizontal direction and enters the reaction chamber. The edge ring bearing surface penetrates into the receiving portion of the edge ring. The ejector pin rises and lifts the wafer from the wafer bearing surface. The end effector retreats in a horizontal direction, the edge ring bearing portion exits the edge ring receiving portion, and the end effector exits the reaction chamber. The ejector pins descend to place the wafer onto the susceptor.

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