Light emitting diode structure and light emitting device

Abstract

The present invention provides a light-emitting diode structure and a light-emitting device, comprising a light-emitting diode, a protection diode, an insulating layer, two pads and a conductive structure, wherein the protection diode is reversely connected in parallel with the light-emitting diode, each diode comprises an epitaxial structure and an electrode, the epitaxial structure comprises an N semiconductor layer, a light-emitting layer and a P semiconductor layer stacked in sequence, the electrodes are all located on the epitaxial structure, the insulating layer covers the epitaxial structure of each diode, the first pad is located on the insulating layer and electrically connects the first electrode and the fourth electrode, the second pad is located on the insulating layer and electrically connects the second electrode, the conductive structure is connected to the second pad and electrically connects the N semiconductor layer of the protection diode, and the conductive structure is made of different materials from the first electrode. Thus, the anti-ESD capability of the light-emitting diode structure can be greatly improved, especially the negative anti-ESD capability.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a light emitting diode structure and a light emitting device with high reliability. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor device that uses energy released when carriers recombine to emit light. LED chips have many advantages such as low power consumption, pure color, long life, small size, fast response time, energy saving and environmental protection. They are widely used in lighting, visible light communication and luminous display. LED chips are divided into three types: upright structure, flip-chip structure and vertical structure. Compared with traditional upright chips, the flip-chip LED chip structure is to invert the diode structure, emit light from the sapphire side, and the electrode side can be fixed on a substrate with better heat dissipation.

[0003] To prevent LED chips from being damaged by electrostatic discharge (ESD), a common solution is to use an additional Zener diode in reverse parallel with the LED chip to prevent the LED chip from being damaged by reverse bias or ESD current. When ESD occurs, the high-voltage characteristics of static electricity will cause the Zener diode to operate in its breakdown voltage region. At this time, the Zener diode in reverse parallel with the LED chip can effectively prevent the LED chip from being damaged by static electricity.

[0004] However, this solution has the following problems: 1. It is difficult to install the Zener diode during the packaging process; 2. This packaging process is costly; 3. Before the packaging is completed, the LED chip is very likely to fail due to static electricity and other reasons; 4. Because the Zener diode is placed close to the LED chip in the package, the luminous efficiency of the LED package will be reduced due to the light absorbed by the Zener diode, thereby reducing the yield of the LED package.

[0005] In addition, due to the limitation of epitaxial capacity, the negative ESD resistance of LED chips in UV (UltraViolet) products is much weaker than the positive ESD resistance, and a suitable solution has not yet been found.

[0006] Therefore, how to improve the ESD resistance of LED chips, and further improve the negative ESD resistance of LED chips, has long been a technical problem that technicians in this field need to solve. Summary of the invention

[0007] The present invention provides a light emitting diode structure, which comprises a light emitting diode, a protection diode, an insulating layer, a first soldering pad, a second soldering pad and a conductive structure.

[0008] The light-emitting diode includes a first epitaxial structure, a first electrode and a second electrode. The first epitaxial structure includes a first semiconductor layer, a first light-emitting layer and a second semiconductor layer stacked in sequence. The first electrode is located on the first epitaxial structure and electrically connected to the first semiconductor layer; the second electrode is located on the first epitaxial structure and electrically connected to the second semiconductor layer. The protection diode is connected to the light-emitting diode in reverse parallel, and includes a second epitaxial structure and a fourth electrode. The second epitaxial structure includes a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer stacked in sequence. The first epitaxial structure and the second epitaxial structure are isolated from each other. The fourth electrode is located on the second epitaxial structure and electrically connected to the fourth semiconductor layer. The insulating layer covers the first epitaxial structure and the second epitaxial structure, and has a first opening, a second opening, a third opening and a fourth opening. The first pad is located on the insulating layer, and is electrically connected to the first electrode and the fourth electrode through the first opening and the fourth opening, respectively. The second pad is located on the insulating layer, and is electrically connected to the second electrode through the second opening. The conductive structure is connected to the second pad, and is electrically connected to the third semiconductor layer through the third opening. Among them, the conductive structure is made of different materials from the first electrode.

[0009] The present invention also provides a light emitting diode structure, which includes a light emitting diode, a protection diode, an insulating layer, a first soldering pad, a second soldering pad and a conductive structure.

[0010] The light-emitting diode includes a first epitaxial structure, a first electrode and a second electrode. The first epitaxial structure includes a first semiconductor layer, a first light-emitting layer and a second semiconductor layer stacked in sequence. The first electrode is located on the first epitaxial structure and is electrically connected to the first semiconductor layer; the second electrode is located on the first epitaxial structure and is electrically connected to the second semiconductor layer. The protection diode is connected to the light-emitting diode in an anti-parallel manner, and includes a second epitaxial structure and a fourth electrode. The second epitaxial structure includes a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer stacked in sequence. The first epitaxial structure and the second epitaxial structure are isolated from each other. The fourth electrode is located on the second epitaxial structure and is electrically connected to the fourth semiconductor layer. The insulating layer covers the first epitaxial structure and the second epitaxial structure, and has a first opening, a second opening, a third opening and a fourth opening. The first pad is located on the insulating layer, and is electrically connected to the first electrode and the fourth electrode through the first opening and the fourth opening, respectively. The second pad is located on the insulating layer, and is electrically connected to the second electrode through the second opening. The conductive structure is connected to the second pad, and is electrically connected to the third semiconductor layer through the third opening. The contact resistance formed between the conductive structure and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

[0011] The present invention also provides a light emitting diode structure, which includes a light emitting diode, a protection diode, an insulating layer, a first soldering pad, a second soldering pad and a conductive structure.

[0012] The light-emitting diode includes a first epitaxial structure, a first electrode and a second electrode. The first epitaxial structure includes a first semiconductor layer, a first light-emitting layer and a second semiconductor layer stacked in sequence. The first electrode is located on the first epitaxial structure and is electrically connected to the first semiconductor layer; the second electrode is located on the first epitaxial structure and is electrically connected to the second semiconductor layer. The protection diode is connected to the light-emitting diode in an anti-parallel manner, and includes a second epitaxial structure and a fourth electrode. The second epitaxial structure includes a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer stacked in sequence. The first epitaxial structure and the second epitaxial structure are isolated from each other. The fourth electrode is located on the second epitaxial structure and is electrically connected to the fourth semiconductor layer. The insulating layer covers the first epitaxial structure and the second epitaxial structure, and has a first opening, a second opening, a third opening and a fourth opening. The first pad is located on the insulating layer, and is electrically connected to the first electrode and the fourth electrode through the first opening and the fourth opening, respectively. The second pad is located on the insulating layer, and is electrically connected to the second electrode through the second opening. The conductive structure is connected to the second pad, and is electrically connected to the third semiconductor layer through the third opening. The material of the first semiconductor layer that the first electrode directly contacts is different from the material of the third semiconductor layer that the conductive structure directly contacts.

[0013] In one embodiment, the conductive structure includes a third pad, which is connected to the second pad and electrically connected to the third semiconductor layer through the third opening. The material of the third pad can be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and AuSn, and the material of the first electrode can be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and PtAu.

[0014] In one embodiment, the conductive structure includes a second transparent conductive layer and a third pad, the second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer, the third pad is connected to the second pad and is electrically connected to the second transparent conductive layer through the third opening.

[0015] In one embodiment, the conductive structure includes a third electrode and a third pad, the third electrode is located on the second epitaxial structure and is electrically connected to the third semiconductor layer, the third pad is connected to the second pad, and is electrically connected to the third electrode through the third opening. The material of the first electrode can be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and PtAu, and the material of the third electrode can be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and PtAu.

[0016] In one embodiment, the conductive structure also includes a second transparent conductive layer, a third electrode and a third pad, the second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer, the third electrode is located between the second transparent conductive layer and the third pad, the third pad is connected to the second pad, and is electrically connected to the third electrode through the third opening.

[0017] In one embodiment, looking down toward the first epitaxial structure from above the light-emitting diode structure, the third electrode is in a ring shape, the fourth electrode is in a block shape, and the fourth electrode is located inside the ring-shaped third electrode; or, the fourth electrode is in a ring shape, the third electrode is in a block shape, and the third electrode is located inside the ring-shaped fourth electrode.

[0018] In one embodiment, looking down from the top of the light-emitting diode structure toward the first epitaxial structure, the third electrode is in an open loop shape, the fourth electrode is in a block shape, and the third electrode sandwiches the fourth electrode; or, the third electrode is in a block shape, the fourth electrode is in an open loop shape, and the fourth electrode sandwiches the third electrode.

[0019] In one embodiment, looking down toward the first epitaxial structure from above the light-emitting diode structure, the second transparent conductive layer is in an annular shape, the fourth electrode is in a block shape, and the fourth electrode is located inside the annular second transparent conductive layer; or, the fourth electrode is in an annular shape, the second transparent conductive layer is in a block shape, and the second transparent conductive layer is located inside the annular fourth electrode; or, the second transparent conductive layer is in an open-loop shape, the fourth electrode is in a block shape, and the second transparent conductive layer sandwiches the fourth electrode; or, the second transparent conductive layer is in a block shape, the fourth electrode is in an open-loop shape, and the fourth electrode sandwiches the second transparent conductive layer.

[0020] In one embodiment, when looking down from above the light-emitting diode structure toward the first epitaxial structure, a horizontal projection area of ​​the fourth electrode is larger than a horizontal projection area of ​​the third electrode.

[0021] In one embodiment, the light emitting diode further includes a first transparent conductive layer located between the second electrode and the second semiconductor layer; the protection diode further includes a third transparent conductive layer located between the fourth electrode and the fourth semiconductor layer.

[0022] In one embodiment, the first electrode includes a connecting electrode and an ohmic contact electrode, the ohmic contact electrode is connected to the first epitaxial structure, the connecting electrode is connected to the ohmic contact electrode, and the first pad is connected to the connecting electrode through the first opening. The material of the connecting electrode can be selected from one or more of Cr, Pt, Au, Ni, Ti, and Al, and the material of the ohmic contact electrode can be selected from one or more of Ti, Al, Au, and Pt.

[0023] In one embodiment, the thickness of the second transparent conductive layer is between 5 nanometers and 500 nanometers.

[0024] In one embodiment, looking down toward the first epitaxial structure from above the light-emitting diode structure, the second epitaxial structure is located outside the first epitaxial structure, and the length of the second epitaxial structure is greater than or equal to 50% of the width of the first epitaxial structure and less than or equal to 110% of the width of the first epitaxial structure.

[0025] In one embodiment, when looking down from above the light-emitting diode structure toward the first epitaxial structure, both the light-emitting diode and the protection diode are in a square shape.

[0026] In one embodiment, the wavelength range of the light emitting diode structure is between 220 nm and 420 nm.

[0027] In one embodiment, the conductive structure includes a third pad, which is connected to the second pad and electrically connected to the third semiconductor layer through the third opening, and the contact resistance formed between the third pad and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

[0028] In one embodiment, the conductive structure includes a second transparent conductive layer and a third pad, the second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer, the third pad is connected to the second pad and is electrically connected to the second transparent conductive layer through the third opening, and the contact resistance formed between the second transparent conductive layer and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

[0029] In one embodiment, the conductive structure includes a third electrode and a third pad, the third electrode is located on the second epitaxial structure and is electrically connected to the third semiconductor layer, the third pad is connected to the second pad and is electrically connected to the third electrode through the third opening, and the contact resistance formed between the third electrode and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

[0030] In one embodiment, the conductive structure includes a second transparent conductive layer, a third electrode and a third pad, the second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer, the third electrode is connected to the second transparent conductive layer, the third pad is connected to the second pad, and is electrically connected to the third electrode through the third opening, and the contact resistance formed between the second transparent conductive layer and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

[0031] In one embodiment, the conductive structure includes a third pad, the third pad is connected to the second pad and directly connected to the third semiconductor layer through the third opening, and the material of the third pad is different from that of the first electrode.

[0032] The conductive structure includes a second transparent conductive layer and a third pad. The second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer. The third pad is connected to the second pad and is electrically connected to the second transparent conductive layer through the third opening. The material of the second transparent conductive layer is different from that of the first electrode.

[0033] In one embodiment, the conductive structure includes a third electrode and a third pad, the third electrode is directly connected to the third semiconductor layer, the third pad is connected to the second pad, and the third electrode is electrically connected through the third opening, and the material of the third electrode is different from that of the first electrode.

[0034] In one embodiment, the conductive structure includes a second transparent conductive layer, a third electrode and a third pad, the second transparent conductive layer is directly connected to the third semiconductor layer, the third electrode is connected to the second transparent conductive layer, the third pad is connected to the second pad, and the third electrode is electrically connected through the third opening, and the material of the second transparent conductive layer is different from the material of the first electrode.

[0035] The present invention also provides a light emitting device, which adopts any of the light emitting diode structures described above.

[0036] One advantage of the present invention is that it provides a light-emitting diode chip and a light-emitting device thereof. By connecting a protection diode in reverse parallel with the light-emitting diode and forming a large contact resistance between the conductive structure and the third semiconductor layer, the ESD resistance of the light-emitting diode chip is greatly improved, especially the negative ESD resistance of the light-emitting diode chip, which directly improves the ESD resistance of the chip bare crystal, avoids the failure of the light-emitting diode chip due to static electricity before the packaging is completed, and saves the cost of packaging Zener diodes.

[0037] Other features and beneficial effects of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other beneficial effects of the present invention can be achieved and obtained by the structures specifically pointed out in the description, claims, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. The positional relationships described in the drawings in the following description are based on the directions in which the components are drawn in the diagrams, unless otherwise specified.

[0039] Figure 1 is a schematic diagram of a top view of a light emitting diode structure provided by a first embodiment of the present invention;

[0040] Figure 2 is along Figure 1 A schematic longitudinal section view taken along the cutting line AA;

[0041] Figure 3 is along Figure 1 A schematic longitudinal cross-sectional view taken along the cutting line BB;

[0042] Figure 4 is a schematic diagram of a top view of a light emitting diode structure provided by a second embodiment of the present invention;

[0043] Figure 5 is along Figure 4 A schematic longitudinal section view taken along the cutting line AA;

[0044] Figure 6 is along Figure 4 A schematic longitudinal cross-sectional view taken along the cutting line BB;

[0045] Figure 7 is a schematic diagram of a top view of a light emitting diode structure provided by a third embodiment of the present invention;

[0046] Figure 8 is along Figure 7 A schematic longitudinal section view taken along the cutting line AA;

[0047] Fig. 9 is along Figure 7 A schematic longitudinal cross-sectional view taken along the cutting line BB;

[0048] Fig.10is a schematic diagram of a top view of a light emitting diode structure provided by a fourth embodiment of the present invention;

[0049] Fig.11 yes Fig.10 Dimensional diagram of

[0050] Fig.12 is along Fig.10 A schematic longitudinal section view taken along the cutting line AA;

[0051] Fig.13 is along Fig.10 A schematic longitudinal cross-sectional view taken along the cutting line BB;

[0052] Figures 14 to 17 yes Fig.10 The schematic diagram of the top view of the light emitting diode structure at each stage in the manufacturing process is shown;

[0053] Fig.18 is a schematic diagram of a top view of a light emitting diode structure provided by a fifth embodiment of the present invention;

[0054] Fig.19 is a schematic diagram of a top view of a light emitting diode structure provided by a sixth embodiment of the present invention;

[0055] Fig. 20 is a schematic diagram of a top view of a light emitting diode structure provided by a seventh embodiment of the present invention;

[0056] Fig.21 It is a schematic top view of the light emitting diode structure provided by the eighth embodiment of the present invention.

[0057] Reference numerals:

[0058] 1, 2, 3, 4, 5, 6, 7, 8-light-emitting diode structure; 9-substrate; 10-light-emitting diode; 12-first epitaxial structure; 121-first semiconductor layer; 122-first light-emitting layer; 123-second semiconductor layer; 124-side of the first epitaxial structure; 125-critical edge; 14-insulating layer; 141-first opening; 142-second opening; 143-third opening; 144-fourth opening; 20-protection diode; 22-second epitaxial structure; 221-third semiconductor layer; 222-second light-emitting layer; 223-fourth semiconductor layer; 2 24-side of the second epitaxial structure; 30-connecting electrode; 31-ohmic contact electrode; 32-first transparent conductive layer; 33-second transparent conductive layer; 34-third transparent conductive layer; 40, 45, 46, 48-conductive structure; 41-first solder pad; 42-second solder pad; 43-third solder pad; 51-first electrode; 52-second electrode; 53-third electrode; 54-fourth electrode; L1-width of the first epitaxial structure; L2-length of the second epitaxial structure; D1-first minimum distance; D2-second minimum distance; X-first direction; Y-second direction. DETAILED DESCRIPTION

[0059] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments; the technical features designed in different implementation modes of the present invention described below can be combined with each other as long as they do not conflict with each other; based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0060] In the description of the present invention, it should be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In addition, the term "including" and any variation thereof all mean "at least including".

[0061] The terms used herein are only for describing specific embodiments and are not intended to limit exemplary embodiments. Unless the context clearly indicates otherwise, the singular forms "one", "one" and "item" used herein are also intended to include plural numbers. It should also be understood that the terms "include" and / or "comprise" used herein specify the existence of stated features, integers, steps, operations, units and / or components, without excluding the existence or addition of one or more other features, integers, steps, operations, units, components and / or combinations thereof.

[0062] See also Figure 1 , Figure 1 is a schematic diagram of a top view of a light emitting diode structure 1 provided in a first embodiment of the present invention, Figure 2 is along Figure 1 A schematic diagram of a longitudinal section taken along the cutting line AA of FIG. Figure 3 is along Figure 1 In order to achieve at least one of the above advantages or other advantages, the first embodiment of the present invention provides a light emitting diode structure 1. As shown in the figure, the light emitting diode structure 1 includes a light emitting diode 10, a protection diode 20, an insulating layer 14, a first pad 41, a second pad 42 and a conductive structure 40.

[0063] The light emitting diode 10 and the protection diode 20 are arranged on a substrate 9. The substrate 9 may be a transparent substrate, a non-transparent substrate or a semi-transparent substrate, wherein the transparent substrate or the semi-transparent substrate may allow the light radiated by the light emitting layer to pass through the substrate 9 to reach the side of the substrate 9 away from the epitaxial structure, for example, the substrate 9 may be any one of a sapphire flat substrate, a sapphire patterned substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, and a glass substrate.

[0064] In some embodiments, a combined patterned substrate 9 may be used, the pattern of the substrate 9 being a series of protruding structures, the protruding structures being a single-layer or multi-layer structure, including at least one light extraction layer having a refractive index lower than that of the substrate 9, the thickness of the light extraction layer being greater than half the height of the protruding structure, and being more conducive to the light extraction efficiency of the light emitting diode 10. Preferably, the protruding structure is a shell-shaped structure, and the material of the light extraction layer may have a refractive index preferably less than 1.6, such as SiO2. In some embodiments, the substrate 9 may be thinned or removed to form a thin film chip.

[0065] The light emitting diode 10 includes a first epitaxial structure 12, a first electrode 51 and a second electrode 52. The first epitaxial structure 12 includes a first semiconductor layer 121, a first light emitting layer 122 and a second semiconductor layer 123 stacked in sequence from bottom to top. The first electrode 51 is located on the first epitaxial structure 12 and is electrically connected to the first semiconductor layer 121. The second electrode 52 is located on the first epitaxial structure 12 and is electrically connected to the second semiconductor layer 123. Since the first electrode 51 is generally made by first evaporating a metal and then fusing the metal material at high temperature, for example, using a Ti / Al metal material, the Ti / Al metal material is first evaporated on the first semiconductor layer 121 and then fused at high temperature, the resistance of the first electrode 51 is often small, that is, the contact resistance formed between the first electrode 51 and the first semiconductor 121 is small, and the material of the first electrode 51 can be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and PtAu.

[0066] The protection diode 20 is connected to the light emitting diode 10 in reverse parallel so that the protection diode 20 can provide electrical protection in the light emitting diode structure 1, protecting the light emitting diode 10 from damage, thereby providing a light emitting diode 10 chip with strong electrostatic discharge (ESD) resistance. The protection diode 20 includes a second epitaxial structure 22 and a fourth electrode 54. The second epitaxial structure 22 includes a third semiconductor layer 221, a second light emitting layer 222 and a fourth semiconductor layer 223 stacked in sequence from bottom to top. The first epitaxial structure 12 and the second epitaxial structure 22 are isolated from each other. The fourth electrode 54 is located on the second epitaxial structure 22 and is electrically connected to the fourth semiconductor layer 223.

[0067] The reverse parallel connection refers to connecting the anode of the light emitting diode 10 to the cathode of the protection diode 20 , while the cathode of the light emitting diode 10 to the anode of the protection diode 20 .

[0068] The light emitting diode 10 and the protection diode 20 are stacked regions electrically isolated from each other and may be composed of a nitride semiconductor layer. With this structure, the light emitting diode 10 may be configured to have the same height as the protection diode 20 on the same substrate. The light emitting diode 10 and the protection diode 20 may be formed by patterning a nitride semiconductor layer grown by the same growth procedure (e.g., metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), etc.) so as to be separated from each other. Therefore, the procedure for forming the first semiconductor layer 121, the first light emitting layer 122, and the second semiconductor layer 123 may be the same as the procedure for forming the third semiconductor layer 221, the second light emitting layer 222, and the fourth semiconductor layer 223. Therefore, the composition and impurity density of the first semiconductor layer 121, the first light emitting layer 122, and the second semiconductor layer 123 may be the same as the composition and impurity density of the third semiconductor layer 221, the second light emitting layer 222, and the fourth semiconductor layer 223, respectively.

[0069] The first semiconductor layer 121 and the third semiconductor layer 221 are formed on the substrate 9. The two semiconductor layers, as layers grown on the substrate 9, may be doped with n-type impurities, such as a gallium nitride semiconductor layer of Si. In some embodiments, a buffer layer is provided between the first semiconductor layer 121 and the substrate 9. In other embodiments, the first epitaxial structure 12 and the second epitaxial structure 22 may also be connected to the substrate 9 via an adhesive layer.

[0070] The first light-emitting layer 122 and the second light-emitting layer 222 may be a quantum well structure (Quantum Well, referred to as QW). In other embodiments, the first light-emitting layer 122 and the second light-emitting layer 222 may also be a multiple quantum well structure (Multiple Quantum Well, referred to as MQW), wherein the multiple quantum well structure includes a plurality of quantum well layers (Well) and a plurality of quantum barrier layers (Barrier) alternately arranged in a repeated manner. In addition, the composition and thickness of the well layer in the first light-emitting layer 122 and the second light-emitting layer 222 determine the wavelength of the generated light. In particular, by adjusting the composition of the well layer, a light-emitting layer that generates different colors of light such as ultraviolet light, blue light, and green light can be provided.

[0071] The second semiconductor layer 123 and the fourth semiconductor layer 223 may be a gallium nitride semiconductor layer doped with p-type impurities, such as Mg. Although the first semiconductor layer 121, the second semiconductor layer 123, the third semiconductor layer 221, and the fourth semiconductor layer 223 may be a single-layer structure, the present invention is not limited thereto and may also be a multi-layer structure and may also include a superlattice layer. In addition, when the first semiconductor layer 121 and the third semiconductor layer 221 are doped with p-type impurities, the second semiconductor layer 123 and the fourth semiconductor layer 223 may be doped with n-type impurities.

[0072] The insulating layer 14 covers the first epitaxial structure 12 and the second epitaxial structure 22, and has a first opening 141, a second opening 142, a third opening 143 and a fourth opening 144. The first opening 141, the second opening 142, the third opening 143 and the fourth opening 144 are respectively located above the first semiconductor layer 121, the second semiconductor layer 123, the third semiconductor layer 221 and the fourth semiconductor layer 223. In one embodiment, the material of the insulating layer 14 includes a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material includes silicone or glass. The dielectric material includes aluminum oxide (AlO), silicon nitride (SiNx), silicon oxide (SiOx), titanium oxide (TiOx), or magnesium fluoride (MgFx) can be an electrically insulating material. For example, the insulating layer 14 can be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate or a combination thereof, and the combination thereof can be, for example, a Bragg reflector (DBR) formed by repeatedly stacking two materials.

[0073] The first pad 41 and the second pad 42 are both located on the insulating layer 14. The first pad 41 is electrically connected to the first electrode 51 and the fourth electrode 54 through the first opening 141 and the fourth opening 144, respectively, and the second pad 42 is electrically connected to the second electrode 52 through the second opening 142. The first pad 41 and the second pad 42 can be formed together using the same material in the same process, and thus can have the same layer structure.

[0074] The conductive structure 40 is connected to the second pad 42 and is electrically connected to the third semiconductor layer 221 through the third opening 143. The material of the conductive structure 40 is different from the material of the first electrode 51, so that the contact resistance formed between the conductive structure 40 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121, so as to avoid damage to the light-emitting diode 10 due to ESD and improve the anti-ESD capability of the light-emitting diode structure 1, especially the negative anti-ESD capability. Three embodiments of the conductive structure 40 are listed below to facilitate understanding of the characteristics and structure of the conductive structure 40. It should be noted that the three embodiments of the conductive structure 40 are only for understanding, not for limiting the present invention.

[0075] In one embodiment, if Figures 1 to 3As shown, the conductive structure 40 may be a third pad 43. The third pad 43 is connected to the second pad 42 and is electrically connected to the third semiconductor layer 221 through the third opening 143. The material of the third pad 43 is different from the material of the first electrode 51, so that the contact resistance formed between the third pad 43 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121, thereby protecting the light-emitting diode 10 and improving the ESD resistance of the light-emitting diode structure 1, especially the negative ESD resistance. As an alternative embodiment, the third pad 43 may be a material that is only directly in contact with the third semiconductor layer 221, which is different from the material of the first electrode 51 that is directly in contact with the first semiconductor layer 121, so that the contact resistance formed between the third pad 43 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121.

[0076] The material of the first electrode 51 may be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and PtAu, and the material of the third pad 43 may be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and AuSn.

[0077] In one embodiment, if Figures 4 to 6 As shown, the conductive structure 45 may include a third electrode 53 and a third pad 43. The third electrode 53 is located on the second epitaxial structure 22 and is electrically connected to the third semiconductor layer 221; the third pad 43 is connected to the second pad 42, and is electrically connected to the third electrode 53 through the third opening 143. The material of the third electrode 53 is different from the material of the first electrode 51, so that the contact resistance formed between the third electrode 53 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121, thereby protecting the light-emitting diode 10 and improving the ESD resistance of the light-emitting diode structure 2, especially the negative ESD resistance. As an alternative embodiment, the third electrode 53 may be a material that is only directly in contact with the third semiconductor layer 221, which is different from the material of the first electrode 51 that is directly in contact with the first semiconductor layer 121, so that the contact resistance formed between the third electrode 53 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121.

[0078] The material of the first electrode 51 can be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and PtAu; the material of the third electrode 53 can be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and PtAu.

[0079] In one embodiment, if Figures 7 to 9As shown, the conductive structure 48 may include a second transparent conductive layer 33 and a third pad 43. The second transparent conductive layer 33 is located on the second epitaxial structure 22 and is electrically connected to the third semiconductor layer 221; the third pad 43 is connected to the second pad 42, and is electrically connected to the second transparent conductive layer 33 through the third opening 143. The material of the second transparent conductive layer 33 is different from the material of the first electrode 51, so that the contact resistance formed between the second transparent conductive layer 33 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121, thereby protecting the light-emitting diode 10 and improving the ESD resistance of the light-emitting diode structure 8, especially the negative ESD resistance. As an alternative embodiment, the second transparent conductive layer 33 may be a material that is only directly in contact with the third semiconductor layer 221, which is different from the material of the first electrode 51 that is directly in contact with the first semiconductor layer 121, so that the contact resistance formed between the second transparent conductive layer 33 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121.

[0080] The material of the first electrode 51 can be selected from one or more of Cr, Pt, Au, Ni, Ti, Al, and PtAu; the second transparent conductive layer 33 can be made of a transparent conductive material, such as indium tin oxide, zinc indium oxide, and the like.

[0081] In one embodiment, if Figures 10 to 13 As shown, the conductive structure 46 may include a second transparent conductive layer 33, a third electrode 53 and a third pad 43. The second transparent conductive layer 33 is located on the second epitaxial structure 22 and is electrically connected to the third semiconductor layer 221. The second transparent conductive layer 33 is located between the third electrode 53 and the third semiconductor layer 221. Preferably, the width of the second transparent conductive layer 33 is greater than the width of the third electrode 53. The third electrode 53 is connected to the second transparent conductive layer 33 and does not contact the third semiconductor layer 221. The third pad 43 is connected to the second pad 42 and is electrically connected to the third electrode 53 through the third opening 143. Further explanation: the material of the second transparent conductive layer 33 is different from the material of the first electrode 51, so that the contact resistance formed between the second transparent conductive layer 33 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121, thereby protecting the light-emitting diode 10 and improving the anti-ESD capability of the light-emitting diode structure 3, especially the negative anti-ESD capability. As an alternative embodiment, the second transparent conductive layer 33 can be a material that is only in direct contact with the third semiconductor layer 221, which is different from the material of the first electrode 51 that is in direct contact with the first semiconductor layer 121, so that the contact resistance formed between the second transparent conductive layer 33 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121.

[0082] In general, the present invention makes the contact resistance formed between the conductive structures 40, 45, 46 and the third semiconductor layer 221 greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121 by making the materials of the conductive structures 40, 45, 46 different from those of the first electrode 51. When a phenomenon such as electrostatic discharge occurs and a large amount of energy passes through, the larger contact resistance formed between the conductive structures 40, 45, 46 and the third semiconductor layer 221 will play a stronger isolation and buffering role, protecting the light-emitting diode 10 and improving the ESD resistance of the light-emitting diode structure 2, especially the negative ESD resistance. That is to say, when an ESD impact voltage is generated, due to the larger contact resistance formed between the conductive structures 40, 45, 46 and the third semiconductor layer 221, under the same voltage, the impact current is smaller in the end, so it can withstand a higher ESD impact under the same impact current. In addition, the present invention can also be such that the material of the first electrode 51 that directly contacts the first semiconductor layer 121 is different from the material of the conductive structures 40, 45, 46 that directly contact the third semiconductor layer 221, so that the contact resistance formed between the conductive structures 40, 45, 46 and the third semiconductor layer 221 is greater than the contact resistance formed between the first electrode 51 and the first semiconductor layer 121, thereby protecting the light-emitting diode 10 and improving the ESD resistance of the light-emitting diode structure 2, especially the negative ESD resistance.

[0083] The different materials mentioned above do not only refer to the different materials used to form the conductive structures 40, 45, 46 and the first electrode 51, but also include the possibility that the specific content of the components is different when the materials used to form the conductive structures 40, 45, 46 and the first electrode 51 are the same. For example, the first electrode 51 located on the first semiconductor layer 121 is made of Ti / Al metal material, which is first evaporated on the first semiconductor layer 121 and then made by high-temperature fusion; the conductive structures 40, 45, 46 located on the third semiconductor layer 221 are also made of Ti / Al metal material, but are not made by high-temperature fusion (but only by evaporating metal), and this implementation should also fall within the scope of the conductive structures 40, 45, 46 and the first electrode 51 being different in material from each other as described in the present invention.

[0084] In one embodiment, if Fig.10 , Fig.11As shown, when looking down from the top of the LED structure 3 toward the first epitaxial structure 12, the second epitaxial structure 22 is located outside the first epitaxial structure 12, and the length L2 of the second epitaxial structure 22 is greater than or equal to 50% of the width L1 of the first epitaxial structure 12, and less than or equal to 110% of the width L1 of the first epitaxial structure 12. By setting this ratio, it is ensured that the protection diode 20 provides a better electrical protection effect in the LED structure 3. Without affecting the process of the LED structure 3, a larger area of ​​the protection diode 20 is formed, which can better improve the overall ESD resistance of the LED structure 3. If the protection diode 20 is smaller, it cannot play the role of protecting the LED 10.

[0085] However, this case is not limited to this. Fig.10 , Fig.11 As shown, the LED structure 3 can also ensure that the protection diode 20 provides a better electrical protection effect in the LED structure 3 in the following manner.

[0086] The first type: looking down from the top of the light-emitting diode structure 3 toward the first epitaxial structure 12, the first pad 41 has overlapping parts with the first epitaxial structure 12 and the second epitaxial structure 22, and the second pad 42 (because the second pad 42 is connected to the third pad 43, the second pad 42 and the third pad 43 are regarded as a whole in this paragraph, and the second pad 42 is collectively referred to) has overlapping parts with the first epitaxial structure 12 and the second epitaxial structure 22, so that the protection diode 20 provides a better electrical protection effect in the light-emitting diode structure 3. That is, looking down from the top of the light-emitting diode structure 3 toward the first epitaxial structure 12, part of the first pad 41 overlaps with the first epitaxial structure 12, and part of the first pad 41 overlaps with the second epitaxial structure 22; part of the second pad 42 overlaps with the first epitaxial structure 12, and part of the second pad 42 overlaps with the second epitaxial structure 22. Preferably, the horizontal projection area of ​​the first pad 41 is greater than or equal to the horizontal projection area of ​​the second pad 42, which enhances the negative ESD resistance of the light-emitting diode structure 3 and also helps the second pad 42 avoid the extension of the first electrode 51 to prevent short circuit when the insulating layer 14 is broken, thereby improving reliability.

[0087] The second type: looking down from the top of the light-emitting diode structure 3 toward the first epitaxial structure 12, the first epitaxial structure 12 and the second epitaxial structure 22 are arranged along the first direction X, the first pad 41 and the second pad 42 (because the second pad 42 is connected to the third pad 43, the second pad 42 and the third pad 43 are regarded as a whole in this paragraph, and the second pad 42 is collectively referred to) are arranged along the second direction Y, and the first direction X and the second direction Y are different, so that the protection diode 20 provides a better electrical protection effect in the light-emitting diode structure 3. In other words, the direction from the first epitaxial structure 12 to the second epitaxial structure 22 is the first direction X, and the direction from the first pad 41 to the second pad 42 is the second direction Y. Preferably, the first direction X is perpendicular to the second direction Y, which can be understood as the first epitaxial structure 12 and the second epitaxial structure 22 are arranged vertically, and the first pad 41 and the second pad 42 are arranged horizontally. Preferably, looking down from the top of the LED structure 3 toward the first epitaxial structure 12 , the minimum distance from the first pad 41 to the second pad 42 is greater than the minimum distance from the first epitaxial structure 12 to the second epitaxial structure 22 , so as to avoid the adverse effects caused by the first pad 41 and the second pad 42 being too close.

[0088] The LED structure 3 can also be configured such that the first pad 41 and the second pad 42 on the LED 10 are arranged perpendicular to the protection diode 20 to ensure that the protection diode 20 provides a better electrical protection effect in the LED structure 3 .

[0089] Further, the light-emitting diode 10 and the protection diode 20 can be in a square shape, and the first epitaxial structure 12 and the second epitaxial structure 22 both have four sides. Looking down from the top of the light-emitting diode structure 3 toward the first epitaxial structure 12, the second epitaxial structure 22 is located outside a side 124 of the first epitaxial structure 12, and the side is defined as the critical edge 125. The length of the side 224 of the second epitaxial structure 22 adjacent to the critical edge 125 is greater than or equal to 50% of the length of the critical edge 125 of the first epitaxial structure 12, and less than or equal to 110% of the length of the critical edge 125 of the first epitaxial structure 12. Specifically, the second epitaxial structure 22 is located on the side of the straight line where the critical edge 125 is located away from the first epitaxial structure 12, and it will not cross or touch the straight line where the critical edge 125 is located, which can not only simplify the overall process, but also obtain a larger area of ​​the protection diode 20, and improve the anti-ESD capability of the light-emitting diode structure 3.

[0090] In one embodiment, when looking down from the top of the light emitting diode structure 3 toward the first epitaxial structure 12, Fig.10 , Fig.11As shown, the ratio of the horizontal projection area of ​​the second epitaxial structure 22 to the horizontal projection area of ​​the first epitaxial structure 12 is greater than or equal to 10% and less than or equal to 35%. In this way, the size of the light-emitting diode structure 3 can be minimized while ensuring that the light-emitting diode structure 3 has a high ESD resistance. As an alternative embodiment, when looking down from the top of the light-emitting diode structure 3 toward the first epitaxial structure 12, the ratio of the horizontal projection area of ​​the second epitaxial structure 22 to the horizontal projection area of ​​the light-emitting diode structure 3 can be greater than or equal to 5% and less than or equal to 50%.

[0091] The horizontal projection area refers to the projection area of ​​each component (such as the first epitaxial structure 12, the second epitaxial structure 22, etc.) projected onto the horizontal plane when the light-emitting diode structure 3 is placed on the horizontal plane. At this time, the direction from the first epitaxial structure 12 to the first solder pad 41 is perpendicular to the vertical direction of the horizontal plane, and the direction from the second epitaxial structure 22 to the first solder pad 41 is also perpendicular to the vertical direction of the horizontal plane.

[0092] In one embodiment, when looking down from the top of the light emitting diode structure 3 toward the first epitaxial structure 12, Fig.10 , Fig.11 As shown, there is a first minimum distance D1 between the first epitaxial structure 12 and the second epitaxial structure 22. The first minimum distance D1 is less than 30 μm and greater than 0 μm, so as to minimize the size of the LED structure 3 while ensuring that the LED structure 3 has high ESD resistance.

[0093] In one embodiment, when looking down from the top of the light emitting diode structure 3 toward the first epitaxial structure 12, Fig.10 , Fig.11 As shown, there is a second minimum distance D2 between the first pad 41 and the second pad 42 . The second minimum distance D2 may be between 30 μm and 230 μm. A reasonable distance may be designed according to the package size of the preset terminal.

[0094] In one embodiment, if Fig.12 , Fig.13 As shown, the light emitting diode 10 further includes a first transparent conductive layer 32, and the first transparent conductive layer 32 is located between the second electrode 52 and the second semiconductor layer 123. The first electrode 51 includes a connecting electrode 30 and an ohmic contact electrode 31, the ohmic contact electrode 31 is connected to the first semiconductor layer 121, and the connecting electrode 30 is connected to the ohmic contact electrode 31. The first pad 41 is connected to the connecting electrode 30 through the first opening 141; the protection diode 20 further includes a third transparent conductive layer 34, and the third transparent conductive layer 34 is located between the fourth electrode 54 and the fourth semiconductor layer 223.

[0095] Each transparent conductive layer (such as the first transparent conductive layer 32, the second transparent conductive layer 33, and the third transparent conductive layer 34) is made of a transparent conductive material, which can ensure the lateral current spreading effect and improve the reliability of the light-emitting diode structure 3. As an example, the transparent conductive material may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium doped zinc oxide (GZO), tungsten doped indium oxide (IWO) or zinc oxide (ZnO), but the embodiment of the present disclosure is not limited thereto. The thickness of the second transparent conductive layer 33 may be between 5 and 500 nanometers.

[0096] The ohmic contact electrode 31 can form a good ohmic contact with the first semiconductor layer 121, which is beneficial to the input and output of current. The connecting electrode 30 can protect the ohmic contact electrode 31 and play a supporting and padding role. Preferably, the connecting electrode 30 can cover the ohmic contact electrode 31 to further avoid metal precipitation in the ohmic contact electrode 31, such as avoiding Al precipitation. The material of the connecting electrode 30 can be selected from one or more of Cr, Pt, Au, Ni, Ti, and Al, and the material of the ohmic contact electrode 31 can be selected from one or more of Ti, Al, Au, and Pt.

[0097] See also Figures 14 to 17 , Figures 14 to 17 yes Fig.10 The schematic diagram of the top view of the light emitting diode structure 3 at each stage of the manufacturing process is shown in FIG. Fig.10 As an example, refer to the light emitting diode structure 3 shown in FIG. Figures 14 to 17 Narrative Fig.10 In contrast, the stacking of each layer in the top view corresponding to other embodiments can also be referred to Figures 14 to 17 Adaptive understanding. Fig.10 The structures such as the ohmic contact electrode 31, the first transparent conductive layer 32, the second transparent conductive layer 33, and the third transparent conductive layer 34 are omitted, so the process stage is also omitted accordingly. Figures 14 to 17 The shaded parts of each figure are the additional structures of the process corresponding to the current figure compared with the process corresponding to the previous figure.

[0098] First, refer to Fig.14 , a first epitaxial structure 12 of a light-emitting diode 10 and a second epitaxial structure 22 of a protection diode 20 are grown on a substrate 9. The first epitaxial structure 12 is spaced a certain distance from the second epitaxial structure 22. The first epitaxial structure 12 includes a first semiconductor layer 121, a first light-emitting layer 122, and a second semiconductor layer 123 stacked in sequence from bottom to top. The second epitaxial structure 22 includes a third semiconductor layer 221, a second light-emitting layer 222, and a fourth semiconductor layer 223 stacked in sequence from bottom to top. Next, the second semiconductor layer 123 and the fourth semiconductor layer 223 are etched toward the first semiconductor layer 121 and the third semiconductor layer 221, respectively, to form through holes to expose the first semiconductor layer 121 and the third semiconductor layer 221. In addition, the edge portions of the first epitaxial structure 12 and the second epitaxial structure 22 can be selectively removed to further expose the substrate 9 for subsequent cutting and other processes.

[0099] Secondly, refer to Fig.15 A first electrode 51 and a second electrode 52 are formed on the first epitaxial structure 12 and are electrically connected to the first semiconductor layer 121 and the second semiconductor layer 123, respectively. A third electrode 53 and a fourth electrode 54 are formed on the second epitaxial structure 22 and are electrically connected to the third semiconductor layer 221 and the fourth semiconductor layer 223, respectively.

[0100] Next, refer to Fig.16 , an insulating layer 14 is formed on the first epitaxial structure 12 and the second epitaxial structure 22, and the insulating layer 14 covers the substrate 9, the first epitaxial structure 12, the second epitaxial structure 22, the first electrode 51, the second electrode 52, the third electrode 53 and the fourth electrode 54. The insulating layer 14 has a first opening 141, a second opening 142, a third opening 143 and a fourth opening 144. The first opening 141, the second opening 142, the third opening 143 and the fourth opening 144 are respectively located above the first electrode 51, the second electrode 52, the third electrode 53 and the fourth electrode 54, for exposing the electrodes.

[0101] Finally, refer to Fig.17 A first pad 41, a second pad 42 and a third pad 43 are formed on the insulating layer 14. The first pad 41 is electrically connected to the first electrode 51 and the fourth electrode 54 through the first opening 141 and the fourth opening 144 respectively; the second pad 42 is electrically connected to the second electrode 52 through the second opening 142; the third pad 43 is connected to the second pad 42, and is electrically connected to the third semiconductor layer 221 through the third opening 143.

[0102] See also Fig.18 , Fig.18 is a top - view structural schematic diagram of the light - emitting diode structure 4 provided by the fifth embodiment of the present invention. Compared with Figure 4 the light - emitting diode structure 2 shown in the second embodiment, in the light - emitting diode structure 4 of this embodiment, when looking down from above the light - emitting diode structure 4 towards the first epitaxial structure 12, the third electrode 53 is in a ring shape, and the fourth electrode 54 is in a block shape. Correspondingly, the third opening 143 and the fourth opening 144 are also adjusted adaptively to ensure smooth circuit operation. Among them, the block - shaped fourth electrode 54 is located inside the ring - shaped third electrode 53, which can make the ESD resistance effect of the light - emitting diode structure 4 better.

[0103] Please refer to Fig.19 , Fig.19 is a top - view structural schematic diagram of the light - emitting diode structure 5 provided by the sixth embodiment of the present invention. Compared with Figure 4 the light - emitting diode structure 2 shown in the second embodiment, in the light - emitting diode structure 5 of this embodiment, when looking down from above the light - emitting diode structure 5 towards the first epitaxial structure 12, the third electrode 53 is in a block shape, and the fourth electrode 54 is in a ring shape. Correspondingly, the third opening 143 and the fourth opening 144 are also adjusted adaptively to ensure smooth circuit operation. Among them, the block - shaped third electrode 53 is located inside the ring - shaped fourth electrode 54, which can make the ESD resistance effect of the light - emitting diode structure 5 better.

[0104] The above - mentioned Fig.18 and Fig.19 the shapes of the electrodes are closed - loop rings. However, this case is not limited to this. When one of the third electrode 53 or the fourth electrode 54 is in a non - closed - loop shape, that is, an open - loop shape, the other electrode is in a block shape, and the open - loop - shaped electrode clipping the block - shaped electrode can also improve the ESD resistance ability of the light - emitting diode structure. For example: the open - loop shape can be a "凵" shape, a "二" shape, etc., and the block shape can be a square block, a round block, etc. The so - called "clipping" can be understood as the block being located inside the notch of the "凵" shape, or the block being located between the two parallel sides of the "二" shape. Generally speaking, when one of the third electrode 53 and the fourth electrode 54 is located on the outside and the other electrode is located on the relative inside, the ESD resistance ability of the light - emitting diode structure can be improved.

[0105] In addition, in the embodiment where the conductive structure 48 includes the second transparent conductive layer 33, the ESD resistance of the light-emitting diode structure can be improved by designing the positional relationship between the second transparent conductive layer 33 and the fourth electrode 54. Specifically, when looking down from the top of the light-emitting diode structure toward the first epitaxial structure 12, the second transparent conductive layer 33 can be in a ring shape, the fourth electrode 54 can be in a block shape, and the fourth electrode 54 is located inside the ring-shaped second transparent conductive layer 33; or, the fourth electrode 54 is in a ring shape, the second transparent conductive layer 33 is in a block shape, and the second transparent conductive layer 33 is located inside the ring-shaped fourth electrode 54; or, the second transparent conductive layer 33 is in an open ring shape, the fourth electrode 54 is in a block shape, and the second transparent conductive layer 33 sandwiches the fourth electrode 54; or, the second transparent conductive layer 33 is in a block shape, the fourth electrode 54 is in an open ring shape, and the fourth electrode 54 sandwiches the second transparent conductive layer 33. In general, in a top view, one of the second transparent conductive layer 33 and the fourth electrode 54 is located on the outside, and the other is located on the inside, so that the ESD resistance of the light emitting diode structure can be improved.

[0106] See also Fig. 20 , Fig. 20 FIG. 1 is a schematic diagram of a top view of a light emitting diode structure 6 provided in the seventh embodiment of the present invention. Figure 4 With regard to the light-emitting diode structure 2 shown in the second embodiment, in the light-emitting diode structure 6 of this embodiment, when looking down from the top of the light-emitting diode structure 6 toward the first epitaxial structure 12, the horizontal projection area of ​​the fourth electrode 54 is larger than the horizontal projection area of ​​the third electrode 53, which can effectively enhance the negative ESD resistance of the light-emitting diode 10, that is, the ESD resistance of the first semiconductor side of the light-emitting diode 10.

[0107] See also Fig.21 , Fig.21 FIG. 8 is a schematic diagram of a top view of a light emitting diode structure 7 provided in the eighth embodiment of the present invention. Figure 4 As for the LED structure 2 shown in the second embodiment, in the LED structure 7 of this embodiment, when viewed from above the LED structure 7 toward the first epitaxial structure 12, the protection diode 20 is disposed at a corner of the LED structure 7, rather than being disposed parallel to the LED 10. The length L2 of the second epitaxial structure 22 of the protection diode 20 is still greater than or equal to the width L1 of the first epitaxial structure 12 (i.e. Fig.21 The length L1 of the upper side edge 124 of the first epitaxial structure 12 is less than 50% of the length L2 of the upper side edge 124 of the first epitaxial structure 12, and is less than or equal to 110% of the width L1 of the first epitaxial structure 12, so that the protection diode 20 has a larger area. This configuration is conducive to simplifying the process of the light-emitting diode structure 7 and improving the anti-ESD capability of the light-emitting diode structure 7.

[0108] It is additionally noted that the aforementioned light emitting diode structures 1, 2, 3, 4, 5, 6, 7, and 8 are mainly used for UV (Ultraviolet Rays) products, and the wavelength range thereof may be between 220 nm and 420 nm.

[0109] This embodiment provides a light emitting device, which uses the light emitting diode structure 1, 2, 3, 4, 5, 6, 7, 8 provided in any of the above embodiments, and its specific structure and technical effects are not repeated. The light emitting device can be a light emitting device for UV products or UVC products.

[0110] In summary, the light-emitting diode structure 1 and its light-emitting device provided by the present invention improve the negative ESD resistance capability by designing a protection diode 20 and optimizing the design and structural matching of the protection diode 20, thereby significantly improving the negative ESD resistance capability of the light-emitting diode structure 1, and at the same time reducing the possibility of core damage due to ESD after point measurement, thereby reducing the abnormality rate of the finished product. The light-emitting diode structure 1 is reversely connected in parallel with the light-emitting diode 10 through the protection diode 20, and the contact resistance formed between the conductive structure 40, 45, 46 and the third semiconductor layer 221 is relatively large, which greatly improves the ESD resistance capability of the light-emitting diode 10 chip, especially improves the negative ESD resistance capability of the light-emitting diode 10 chip, directly improves the ESD resistance capability of the chip bare crystal, avoids the failure of the light-emitting diode 10 chip due to static electricity before the packaging is completed, and saves the cost of packaging Zener diodes.

[0111] In addition, those skilled in the art should understand that, although there are many problems in the prior art, each embodiment or technical solution of the present invention can be improved in only one or several aspects, without having to solve all the technical problems listed in the prior art or background technology at the same time. Those skilled in the art should understand that the content not mentioned in a claim should not be used as a limitation on the claim.

[0112] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode structure, characterized in that: The light emitting diode structure comprises: A light emitting diode, comprising a first epitaxial structure, a first electrode and a second electrode, wherein the first epitaxial structure comprises a first semiconductor layer, a first light emitting layer and a second semiconductor layer stacked in sequence, the first electrode is located on the first epitaxial structure and electrically connected to the first semiconductor layer, and the second electrode is located on the first epitaxial structure and electrically connected to the second semiconductor layer; a protection diode connected to the light-emitting diode in reverse parallel, the protection diode comprising a second epitaxial structure and a fourth electrode, the second epitaxial structure comprising a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer stacked in sequence, the first epitaxial structure and the second epitaxial structure being isolated from each other, and the fourth electrode being located on the second epitaxial structure and electrically connected to the fourth semiconductor layer; an insulating layer, covering the first epitaxial structure and the second epitaxial structure, and having a first opening, a second opening, a third opening, and a fourth opening; a first pad, located on the insulating layer and electrically connected to the first electrode and the fourth electrode through the first opening and the fourth opening respectively; a second pad, located on the insulating layer and electrically connected to the second electrode through the second opening; a conductive structure connected to the second pad and electrically connected to the third semiconductor layer through the third opening; The conductive structure and the first electrode are made of different materials, so that the contact resistance formed between the conductive structure and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

2. The light emitting diode structure according to claim 1, characterized in that: The conductive structure includes a third pad, which is connected to the second pad and electrically connected to the third semiconductor layer through the third opening.

3. The light emitting diode structure according to claim 1, characterized in that: The conductive structure includes a second transparent conductive layer and a third pad. The second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer. The third pad is connected to the second pad and is electrically connected to the second transparent conductive layer through the third opening.

4. The light emitting diode structure according to claim 1, characterized in that: The conductive structure includes a third electrode and a third pad. The third electrode is located on the second epitaxial structure and is electrically connected to the third semiconductor layer. The third pad is connected to the second pad and is electrically connected to the third electrode through the third opening.

5. The light emitting diode structure according to claim 1, characterized in that: The conductive structure includes a second transparent conductive layer, a third electrode and a third pad. The second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer. The third electrode is located between the second transparent conductive layer and the third pad. The third pad is connected to the second pad and is electrically connected to the third electrode through the third opening.

6. The light emitting diode structure according to claim 4 or 5, characterized in that: Looking down from the top of the light-emitting diode structure toward the first epitaxial structure, the third electrode is in a ring shape, the fourth electrode is in a block shape, and the fourth electrode is located inside the ring-shaped third electrode; Alternatively, the fourth electrode is in a ring shape, the third electrode is in a block shape, and the third electrode is located inside the ring-shaped fourth electrode.

7. The light emitting diode structure according to claim 4 or 5, characterized in that: Looking down from the top of the light-emitting diode structure toward the first epitaxial structure, the third electrode is in an open-loop shape, the fourth electrode is in a block shape, and the third electrode sandwiches the fourth electrode; Alternatively, the third electrode is in a block shape, the fourth electrode is in an open ring shape, and the fourth electrode sandwiches the third electrode.

8. The light emitting diode structure according to claim 3 or 5, characterized in that: Looking down from the top of the light-emitting diode structure toward the first epitaxial structure, the second transparent conductive layer is in a ring shape, the fourth electrode is in a block shape, and the fourth electrode is located inside the second transparent conductive layer in a ring shape; Or, the fourth electrode is in a ring shape, the second transparent conductive layer is in a block shape, and the second transparent conductive layer is located inside the ring-shaped fourth electrode; Or, the second transparent conductive layer is in an open ring shape, the fourth electrode is in a block shape, and the second transparent conductive layer sandwiches the fourth electrode; Alternatively, the second transparent conductive layer is in a block shape, the fourth electrode is in an open ring shape, and the fourth electrode sandwiches the second transparent conductive layer.

9. The light emitting diode structure according to claim 4 or 5, characterized in that: Looking down from above the light-emitting diode structure toward the first epitaxial structure, a horizontal projection area of ​​the fourth electrode is larger than a horizontal projection area of ​​the third electrode.

10. The light emitting diode structure according to claim 5, characterized in that: The thickness of the second transparent conductive layer is between 5 and 500 nanometers.

11. The light emitting diode structure according to claim 1, characterized in that: The light emitting diode further includes a first transparent conductive layer, which is located between the second electrode and the second semiconductor layer; the protection diode further includes a third transparent conductive layer, which is located between the fourth electrode and the fourth semiconductor layer.

12. The light emitting diode structure according to claim 1, characterized in that: The first electrode includes a connecting electrode and an ohmic contact electrode, the ohmic contact electrode is connected to the first epitaxial structure, the connecting electrode is connected to the ohmic contact electrode, and the first pad is connected to the connecting electrode through the first opening.

13. The light emitting diode structure according to claim 1, characterized in that: Looking down toward the first epitaxial structure from above the light-emitting diode structure, the second epitaxial structure is located outside the first epitaxial structure, and the length of the second epitaxial structure is greater than or equal to 50% of the width of the first epitaxial structure and less than or equal to 110% of the width of the first epitaxial structure.

14. The light emitting diode structure according to claim 1, characterized in that: Looking down from the top of the light-emitting diode structure toward the first epitaxial structure, the light-emitting diode and the protection diode are both in a square shape.

15. The light emitting diode structure according to claim 1, characterized in that: The wavelength range of the light emitting diode structure is between 220nm and 420nm.

16. A light emitting diode structure, characterized in that: The light emitting diode structure comprises: A light emitting diode, comprising a first epitaxial structure, a first electrode and a second electrode, wherein the first epitaxial structure comprises a first semiconductor layer, a first light emitting layer and a second semiconductor layer stacked in sequence, the first electrode is located on the first epitaxial structure and electrically connected to the first semiconductor layer, and the second electrode is located on the first epitaxial structure and electrically connected to the second semiconductor layer; a protection diode connected to the light-emitting diode in reverse parallel, the protection diode comprising a second epitaxial structure and a fourth electrode, the second epitaxial structure comprising a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer stacked in sequence, the first epitaxial structure and the second epitaxial structure being isolated from each other, and the fourth electrode being located on the second epitaxial structure and electrically connected to the fourth semiconductor layer; an insulating layer, covering the first epitaxial structure and the second epitaxial structure, and having a first opening, a second opening, a third opening, and a fourth opening; a first pad, located on the insulating layer and electrically connected to the first electrode and the fourth electrode through the first opening and the fourth opening respectively; a second pad, located on the insulating layer and electrically connected to the second electrode through the second opening; a conductive structure connected to the second pad and electrically connected to the third semiconductor layer through the third opening; The contact resistance formed between the conductive structure and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

17. The light emitting diode structure according to claim 16, characterized in that: The conductive structure includes a third pad, which is connected to the second pad and electrically connected to the third semiconductor layer through the third opening. The contact resistance formed between the third pad and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

18. The light emitting diode structure according to claim 16, characterized in that: The conductive structure includes a second transparent conductive layer and a third pad, the second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer, the third pad is connected to the second pad and is electrically connected to the second transparent conductive layer through the third opening, and the contact resistance formed between the second transparent conductive layer and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

19. The light emitting diode structure according to claim 16, characterized in that: The conductive structure includes a third electrode and a third pad. The third electrode is located on the second epitaxial structure and is electrically connected to the third semiconductor layer. The third pad is connected to the second pad and is electrically connected to the third electrode through the third opening. The contact resistance formed between the third electrode and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

20. The light emitting diode structure according to claim 16, characterized in that: The conductive structure includes a second transparent conductive layer, a third electrode and a third pad, the second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer, the third electrode is connected to the second transparent conductive layer, the third pad is connected to the second pad, and is electrically connected to the third electrode through the third opening, and the contact resistance formed between the second transparent conductive layer and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

21. A light emitting diode structure, characterized in that: The light emitting diode structure comprises: A light emitting diode, comprising a first epitaxial structure, a first electrode and a second electrode, wherein the first epitaxial structure comprises a first semiconductor layer, a first light emitting layer and a second semiconductor layer stacked in sequence, the first electrode is located on the first epitaxial structure and electrically connected to the first semiconductor layer, and the second electrode is located on the first epitaxial structure and electrically connected to the second semiconductor layer; a protection diode connected to the light-emitting diode in reverse parallel, the protection diode comprising a second epitaxial structure and a fourth electrode, the second epitaxial structure comprising a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer stacked in sequence, the first epitaxial structure and the second epitaxial structure being isolated from each other, and the fourth electrode being located on the second epitaxial structure and electrically connected to the fourth semiconductor layer; an insulating layer, covering the first epitaxial structure and the second epitaxial structure, and having a first opening, a second opening, a third opening, and a fourth opening; a first pad, located on the insulating layer and electrically connected to the first electrode and the fourth electrode through the first opening and the fourth opening respectively; a second pad, located on the insulating layer and electrically connected to the second electrode through the second opening; a conductive structure connected to the second pad and electrically connected to the third semiconductor layer through the third opening; The material of the first semiconductor layer that the first electrode directly contacts is different from the material of the third semiconductor layer that the conductive structure directly contacts, so that the contact resistance formed between the conductive structure and the third semiconductor layer is greater than the contact resistance formed between the first electrode and the first semiconductor layer.

22. The light emitting diode structure according to claim 21, characterized in that: The conductive structure includes a third pad, the third pad is connected to the second pad and directly connected to the third semiconductor layer through the third opening, and the material of the third pad is different from that of the first electrode.

23. The light emitting diode structure according to claim 21, characterized in that: The conductive structure includes a second transparent conductive layer and a third pad. The second transparent conductive layer is located on the second epitaxial structure and is electrically connected to the third semiconductor layer. The third pad is connected to the second pad and is electrically connected to the second transparent conductive layer through the third opening. The material of the second transparent conductive layer is different from that of the first electrode.

24. The light emitting diode structure according to claim 21, characterized in that: The conductive structure includes a third electrode and a third pad. The third electrode is directly connected to the third semiconductor layer. The third pad is connected to the second pad and is electrically connected to the third electrode through the third opening. The material of the third electrode is different from that of the first electrode.

25. The light emitting diode structure according to claim 21, characterized in that: The conductive structure includes a second transparent conductive layer, a third electrode and a third pad. The second transparent conductive layer is directly connected to the third semiconductor layer. The third electrode is connected to the second transparent conductive layer. The third pad is connected to the second pad and is electrically connected to the third electrode through the third opening. The material of the second transparent conductive layer is different from that of the first electrode.

26. A light emitting device, characterized in that: A light emitting diode structure as claimed in any one of claims 1 to 25 is employed.

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