Methods, apparatus and computer equipment for soft error assessment of electronic devices

Abstract

This application relates to a method, apparatus, computer device, storage medium, and computer program product for assessing soft errors in electronic devices. The method includes: obtaining a combination of single-event flip-flop (SFL) cross-sectional area values ​​of the electronic device when it is irradiated by a surface source through a de-energizer combination; obtaining a combination of surface particle fluxes by simulating the irradiation of the electronic device by a volume source, the surface particle flux combination corresponding to the SFL cross-sectional area value combination obtained when the surface source is irradiated by a de-energizer combination; and determining the soft error rate of the electronic device based on the SFL cross-sectional area value combination and the surface particle flux combination. This method can improve the accuracy of soft error rate assessment for electronic devices.

Description

Technical Field

[0001] This application relates to the field of electronic device reliability technology, and in particular to a method, apparatus, computer device, storage medium, and computer program product for assessing soft errors in electronic devices. Background Technology

[0002] With the development of electronic device reliability technology, 235U (uranium), a raw material for nuclear reactions, and its daughter isotopes such as 232Th (thorium) are relatively common radioactive elements. Since a large amount of 235U exists naturally on Earth, these elements are very likely to appear in various materials of semiconductor devices, such as molding compounds, solder balls, and fillers. These elements usually undergo alpha decay, which can lead to adverse effects such as data loss and functional interruption in semiconductor devices.

[0003] To address the aforementioned issues, existing technologies generally employ artificial radioactive sources to conduct alpha particle soft error rate acceleration experiments. However, "bulk" type artificial radioactive sources are difficult to manufacture, and "area" type artificial radioactive sources are typically used for experiments. This results in some discrepancies between the artificial sources and the actual devices, leading to significant experimental errors. Summary of the Invention

[0004] Therefore, it is necessary to provide a method, apparatus, computer device, computer-readable storage medium, and computer program product for evaluating soft errors in electronic devices that can improve the accuracy of soft error rate evaluation, in order to address the above-mentioned technical problems.

[0005] In a first aspect, this application provides a method for soft error assessment of electronic devices, the method comprising:

[0006] The combination of single-particle flip-off cross-section values ​​of an electronic device is obtained when a surface source is irradiated by a combination of energy-reducing plates.

[0007] By simulating the situation of irradiating electronic devices with a bulk source, the surface particle flux combination is obtained. The surface particle flux combination corresponds to the single particle flip cross section value combination obtained when the surface source is irradiated with an energy reduction plate combination.

[0008] The soft error rate of the electronic device is determined based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle flux.

[0009] In one embodiment, the acquisition of the single-particle flip-off (SPT) cross-sectional value combination of the electronic device when the surface source is irradiated by a combination of de-energizers includes: acquiring the SPT cross-sectional value of the electronic device corresponding to each of the three thicknesses when the surface source is irradiated by a de-energizer with at least three different thicknesses, wherein the SPT cross-sectional value combination includes each of the SPT cross-sectional values.

[0010] In one embodiment, the step of simulating the situation of irradiating electronic devices with a bulk source to obtain the surface particle flux combination includes: simulating the situation of irradiating electronic devices with a bulk source to obtain the corresponding surface particle flux emitted by a bulk source material with a thickness of at least three segments inside the bulk source, wherein the surface particle flux combination includes each of the surface particle fluxes.

[0011] In one embodiment, the thicknesses are set at equal intervals according to the maximum penetration thickness of the particles.

[0012] In one embodiment, obtaining the single-particle flip-off cross-section value of an electronic device when the surface source is irradiated through a de-energizer includes: obtaining the total alpha particle fluence and the number of particle flips of the electronic device when the surface source is irradiated through a de-energizer; and determining the single-particle flip-off cross-section value based on the total alpha particle fluence, the number of particle flips, and the total device capacity of the electronic device.

[0013] In one embodiment, the combination of single-event flip-off cross-section values ​​includes each of the single-event flip-off cross-section values, and the combination of surface particle fluxes includes each of the surface particle fluxes; determining the soft error rate of the electronic device based on the combination of single-event flip-off cross-section values ​​and the combination of surface particle fluxes includes: determining the soft error rate of the electronic device as the sum of the products of each single-event flip-off cross-section value and each surface particle flux in the combination of single-event flip-off cross-section values ​​and the combination of surface particle fluxes, wherein the single-event flip-off cross-section value and the surface particle flux correspond one-to-one.

[0014] Secondly, this application also provides a soft error evaluation device for electronic devices, the device comprising:

[0015] The first data acquisition module is used to acquire the single-particle flip-off cross-section value combination of the electronic device when the surface source is irradiated by the energy reduction plate combination.

[0016] The second data acquisition module is used to simulate the situation of irradiating electronic devices by a volume source to obtain the surface particle flux combination. The surface particle flux corresponds one-to-one with the single particle flip cross section value obtained when the surface source is combined with a de-energizer to irradiate the electronic devices.

[0017] The soft error rate determination module is used to determine the soft error rate of the electronic device based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle flux.

[0018] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps of the soft error evaluation method of the above-described electronic device.

[0019] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the soft error assessment method for the above-described electronic device.

[0020] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the soft error evaluation method for the above-described electronic device.

[0021] The aforementioned soft error assessment method, apparatus, computer equipment, storage medium, and computer program product for electronic devices, by placing an energy-reducing plate between a surface source and the electronic device, can obtain the combination of single-particle flip-off cross-section values ​​of the electronic device when the surface source irradiates the electronic device through the energy-reducing plate, and obtain the corresponding surface particle flux combination obtained by simulating the case where the electronic device is irradiated by a volume source. Finally, based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle flux, the soft error rate of the electronic device is determined. By placing an energy-reducing plate between the surface source and the electronic device, the effect of the surface source simulating the volume source can be achieved, thereby improving the accuracy of the soft error rate assessment of electronic devices through the above method. Attached Figure Description

[0022] Figure 1 This is a flowchart illustrating a soft error assessment method for electronic devices in one embodiment;

[0023] Figure 2 This is a schematic diagram of the structure of a radioactive source irradiation test platform;

[0024] Figure 3 This is a schematic diagram of the irradiation test structure of a soft error assessment method for electronic devices in one embodiment;

[0025] Figure 4 This is a schematic diagram of the equivalent surface source irradiation in a soft error assessment method for electronic devices in one embodiment;

[0026] Figure 5 This is a structural block diagram of a soft error assessment device for electronic devices in one embodiment;

[0027] Figure 6 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described; however, any combination of these technical features that does not contradict each other should be considered within the scope of this specification.

[0030] 235U, 238U, and their daughter isotopes (such as 232Th) are relatively common radioactive elements used as raw materials in nuclear reactions. Since large amounts of 235U (0.72%), 238U (99.2%), and 232Th (100%) naturally exist on Earth, these elements readily appear in various materials of semiconductor devices, such as molding compounds, solder balls, and fillers. Simultaneously, trace amounts of 210Po are always present in the solder joints of semiconductor devices. These heavy radioactive isotopes typically undergo alpha decay, continuously releasing alpha particles with energies of approximately 4 MeV-9 MeV. When these energetic alpha particles enter the active region of a semiconductor device, they generate high-density electron-hole pairs along their tracks. These electron-hole pairs separate under the influence of the device's electric field and are collected by nodes, generating an interference current signal in the circuit, which can lead to serious consequences such as data loss and malfunction of the semiconductor device. It is evident that the impact of alpha particles on circuit systems can be fatal. For example, when an alpha particle causes a soft error in the CPU's instruction cache, it will prevent the CPU from performing its intended function. Therefore, the following embodiments will use alpha particles as an example for illustration.

[0031] In one embodiment, such as Figure 1 As shown, a method for soft error assessment of electronic devices is provided, including the following steps:

[0032] Step S102: Obtain the combined single-particle flip-off cross-section value of the electronic device when the surface source is irradiated by the energy reduction plate combination.

[0033] Among them, a surface source refers to an artificial radioactive source that can generate an alpha particle energy spectrum. The lower surface of the surface source is coated with a radioactive thin film. An alpha particle energy spectrum can be generated through the surface source. Generally, the alpha particle energy spectrum generated by the surface source is a discrete spectrum, which is somewhat different from the distributed energy spectrum actually generated by electronic devices.

[0034] Alpha particles emitted from a surface source can achieve energy reduction after passing through an energy reduction plate. The energy reduction effect varies depending on the material of the energy reduction plate. In this application embodiment, the energy reduction plates involved are all aluminum energy reduction plates.

[0035] Among them, electronic devices refer to devices that can realize various specific functions. For example, electronic devices can be semiconductor devices, which can be used in communication, radar and other equipment. Taking semiconductor devices as the analysis object, by irradiating them and executing the methods of the following embodiments of this application, the soft error rate of semiconductor devices can be effectively evaluated.

[0036] The single-event flip cross-section value combination can be composed of different single-event flip cross-section values. Specifically, different single-event flip cross-section values ​​can be obtained by setting the thickness of the energy reduction plate.

[0037] Among them, reference Figure 2 The diagram shown is a structural schematic of a radioactive source irradiation test platform, which may include a surface source, semiconductor devices, a test board, a programmable power supply, and a computer. Figure 2 The host computer in the test system is used to power the semiconductor device, monitor its operating status, and acquire effect data during the test. The surface source (such as the artificial radioactive source Am-241) is placed above the semiconductor device (such as the chip under test), and the test board is located below the semiconductor device.

[0038] In one embodiment, reference Figure 3 As shown, an aluminum de-emitter is placed between the surface source (Am-241) and the semiconductor device (the chip under test). The alpha particles generated by the surface source irradiate the semiconductor device through the aluminum de-emitter, thereby obtaining the single-event flip section value of the semiconductor device. The thickness of the aluminum de-emitter can be set to more than one. For each thickness of the aluminum de-emitter, a set of irradiation tests can be carried out separately, thereby obtaining the combination of single-event flip section values ​​of the electronic device when the surface source irradiates the semiconductor device through aluminum de-emitters of various thicknesses.

[0039] In one embodiment, obtaining the single-particle flip-off cross-section value of an electronic device when a surface source is irradiated through a de-energizer includes:

[0040] When an electronic device is irradiated by a surface source through a de-energizer, the total alpha particle fluence and the number of particle flips of the electronic device are obtained.

[0041] The single-particle flip cross-section value is determined based on the total fluence of the alpha particles, the number of particle flips, and the total capacity of the electronic device.

[0042] Among them, the total fluence of alpha particles can refer to the total number of alpha particles emitted from the surface source and passing through the energy reduction plate in the electronic device. The particle flip number refers to the number of particles that deposit energy in the electronic device. The total device capacity of the electronic device can refer to the storage capacity of the electronic device. The total fluence of alpha particles and the particle flip number generated during the test can be obtained by using a test board located below the semiconductor device.

[0043] The single-event flip cross-section value can be determined by the total fluence of alpha particles, the number of particle flips, and the total capacity of electronic devices, as shown in the following formula:

[0044]

[0045] Where σ is the single-particle flip-off cross-section value, N e Where N is the particle flip number, Φ is the total alpha particle fluence of the electronic device, and N is the particle flip number. b This refers to the total capacity of electronic devices.

[0046] Step S104: By simulating the situation of the electronic device being irradiated by a volume source, a combination of surface particle fluxes is obtained. The combination of surface particle fluxes corresponds to the combination of single-particle flip-off cross-section values ​​obtained when the electronic device is irradiated by a surface source through a de-energizing plate.

[0047] Surface particle flux refers to the number of alpha particles per unit area per unit time on the surface of an electronic device. Surface particle flux can be obtained by simulating the situation of a volume source irradiating an electronic device. Combinations of surface particle flux can be composed of different surface particle fluxes. Simulation models can be established based on any simulation method such as Monte Carlo simulation to obtain surface particle flux.

[0048] In one embodiment, the surface particle flux can be obtained by simulating the situation of a body source irradiating an electronic device. Specifically, a body source simulation model can be established to simulate the situation of a body source irradiating an electronic device. A body source refers to an artificial radiation source with a certain thickness. The alpha particle energy spectrum generated by the body source is close to the alpha particle energy spectrum of the electronic device in the real environment. However, the body source is difficult to manufacture. Therefore, the surface particle flux can be obtained by establishing a body source simulation model. In the body source simulation model, the thickness of the body source corresponds to the thickness of the energy reduction plate.

[0049] Step S106: Determine the soft error rate of the electronic device based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle flux.

[0050] The soft error rate of electronic devices refers to the probability of soft errors occurring in electronic devices. After obtaining the combination of single-event flip cross-section values ​​and the combination of surface particle flux, the single-event flip cross-section values ​​and surface particle flux in the single-event flip cross-section combination can be calculated to determine the soft error rate of electronic devices.

[0051] In the aforementioned method for assessing soft errors in electronic devices, by placing a de-energizer between the surface source and the electronic device, the combination of single-particle flip-off cross-section values ​​of the electronic device when the surface source irradiates the electronic device through the de-energizer can be obtained. Additionally, the corresponding combination of surface particle fluxes obtained by simulating the irradiation of the electronic device by a volume source can also be obtained. Finally, the soft error rate of the electronic device is determined based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle fluxes. By placing a de-energizer between the surface source and the electronic device, the effect of simulating a volume source with a surface source can be achieved. Therefore, the accuracy of assessing the soft error rate of electronic devices can be improved through this method.

[0052] As can be seen from the above embodiments, by setting a de-energizer between the surface source and the electronic device, the single-particle flip-off cross-section value of the electronic device can be obtained when the surface source irradiates the electronic device through the de-energizer. Simulation of the case where the volume source irradiates the electronic device can also be performed to obtain the surface particle flux. If the thickness of the de-energizer and the thickness of the volume source are different, the data obtained will also be different. Therefore, by using experimental combinations of de-energizers and volume sources with different thicknesses, the corresponding data can be obtained and processed to determine the soft error rate of the electronic device.

[0053] The thickness of the de-energy plate can be 0 μm (in which case no de-energy plate is placed between the surface source and the electronic device), or it can be any value with a thickness greater than 0 μm. For experimental combinations of de-energy plates with different thicknesses, it can refer to experimental combinations of de-energy plates with a thickness of 0 μm and de-energy plates with a thickness greater than 0 μm and different values, so as to obtain the corresponding single-event flip cross-section value. Alternatively, it can refer to experimental combinations of de-energy plates with a thickness greater than 0 μm and different values, so as to obtain the corresponding single-event flip cross-section value.

[0054] When the thickness of the de-energizer is 0 μm, it is the case of direct irradiation of the electronic device by the surface source. In this case, there is no de-energizer between the surface source and the electronic device. The single-particle flip-off cross-section value can be obtained by directly irradiating the electronic device by the surface source.

[0055] Among them, the scenario of irradiating electronic devices with a bulk source can be simulated to obtain the corresponding surface particle flux.

[0056] In one embodiment, for the case where a surface source irradiates an electronic device through a de-energizer, the single-event flip-off (SIF) cross-sectional values ​​corresponding to the surface source irradiating the electronic device through de-energizers of different thicknesses can be obtained. Specifically, obtaining the SIF cross-sectional values ​​of the electronic device when the surface source irradiates the electronic device through a de-energizer includes: obtaining the SIF cross-sectional values ​​of the electronic device corresponding to each of the three thicknesses when the surface source irradiates the electronic device through de-energizers of at least three thicknesses, wherein the combination of SIF cross-sectional values ​​includes each of the SIF cross-sectional values.

[0057] The at least three thicknesses of the de-energy sheet can refer to a de-energy sheet with three thicknesses: thickness A, thickness B, and thickness C. For the case of three different thicknesses of the de-energy sheet, thickness A can be equal to 0 μm, and thicknesses B and C can be any unequal values ​​with thicknesses greater than 0 μm, or thicknesses A, B, and C can all be any unequal values ​​with thicknesses greater than 0 μm. The setting and related combinations of the de-energy sheet can be adjusted according to the actual situation of the experiment. Specifically, when there are three thicknesses of the de-energy sheet, the single-particle flip section value of the electronic device corresponding to each thickness can be obtained when the surface source is irradiated through the de-energy sheet with at least three thicknesses.

[0058] In one embodiment, a simulation is performed on the case of a bulk source irradiating an electronic device to obtain the corresponding surface particle flux emitted by a bulk source material with at least three thicknesses inside the bulk source. The combination of surface particle fluxes includes each of the surface particle fluxes. Specifically, when simulating the case of a bulk source irradiating an electronic device, a bulk source simulation model can be established using any simulation method such as Monte Carlo simulation to simulate the case of a surface source irradiating an electronic device through a de-energizing plate, thereby obtaining the corresponding surface particle fluxes.

[0059] In one embodiment, the thickness of the de-energizing plate and the thickness of the source can be set according to the maximum penetration thickness of the particles. Specifically, the maximum penetration thickness of the particles can be determined according to the type of the de-energizing plate and the type of the radiation source. After determining the maximum penetration thickness of the particles, the maximum penetration thickness can be divided, such as dividing the maximum penetration thickness into a certain number of equidistant parts to obtain a certain number of equidistant division results. Finally, the thickness of the de-energizing plate and the thickness of the source are determined according to the equidistant division results. When dividing the maximum penetration thickness, it can be divided equidistantly or non-equidistantly. The number of parts and the division method can be determined according to the experimental accuracy and efficiency.

[0060] In one embodiment, the maximum penetration thickness is divided into three equal parts, namely D1, D2, and D3. The thickness of the de-energy plate can be 0, D1, or D1+D2. When the thickness of the de-energy plate is 0, the thickness of the corresponding volume source material can be D1. When the thickness of the de-energy plate is D1, the thickness of the corresponding volume source material can be D1+D2. When the thickness of the de-energy plate is D1+D2, the thickness of the corresponding volume source material can be D1+D2+D3. This allows the surface particle flux corresponding to the single-particle flip section value to be obtained, achieving the effect of simulating a volume source from a surface source. This enables the subsequent accurate calculation of the soft error rate.

[0061] In one embodiment, the thickness of the de-energizer is of three types, including thickness A, thickness B, and thickness C, where thickness A is 0 μm, and thicknesses B and C are set according to the maximum penetration thickness of the particles. This allows us to obtain the single-particle flip-off cross-section value of the electronic device when the surface source directly irradiates the electronic device, as well as the single-particle flip-off cross-section value of the electronic device when the surface source is irradiated through de-energizers of thicknesses B and C, respectively.

[0062] In one embodiment, the thickness of the energy-reducing plate is of three types: C thickness, D thickness, and E thickness, where C thickness is equal to 0 μm, and D and E thicknesses are set according to the maximum penetration thickness of the particles. Figure 4 As shown, three sets of tests were conducted based on the three thicknesses of the energy reduction sheet. The first set of tests obtained the single-particle flip section value σ3, the second set of tests obtained the single-particle flip section value σ4, and the third set of tests obtained the single-particle flip section value σ5. Correspondingly, the situation of the bulk source irradiating the electronic device can be simulated to obtain the corresponding surface particle flux D4' emitted by the bulk source material inside the bulk source, the situation of the bulk source irradiating the electronic device can be simulated to obtain the corresponding surface particle flux D5' emitted by the bulk source material inside the bulk source, and the situation of the bulk source irradiating the electronic device can be simulated to obtain the corresponding surface particle flux D6' emitted by the bulk source material inside the bulk source.

[0063] In one embodiment, the single-particle flip-off cross-section value corresponds one-to-one with the surface particle flux. Specifically, after obtaining the single-particle flip-off cross-section value and surface particle flux corresponding to each thickness, the soft error rate of the electronic device can be determined by summing the products of the single-particle flip-off cross-section value and surface particle flux corresponding to each thickness. Specifically, the sum of the products of σ3 and D4', σ4 and D5', and σ5 and D6' can be used as the soft error rate of the electronic device. Thus, through multiple sets of experimental data, the particle soft error rate of alpha can be evaluated more accurately.

[0064] In one embodiment, the soft error rate of the electronic device can be calculated using the following formula:

[0065]

[0066] Where SER is the soft error rate of the electronic device, σ i The single-event flip (SIF) cross-sectional area (TIA) is represented by the value of 'i', which indicates whether a de-scaling device is placed. Specifically, i = 2 indicates that a de-scaling device is placed between the surface source and the electronic device, while i = 0 indicates that a de-scaling device is not placed between them. Correspondingly, σ2 represents the SIF cross-sectional area with a de-scaling device, fiux3 represents the surface particle flux with a de-scaling device, σ1 represents the SIF cross-sectional area with a de-scaling device, fiux2 represents the surface particle flux with a de-scaling device, σ0 represents the SIF cross-sectional area without a de-scaling device, and fiux1 represents the surface particle flux without a de-scaling device. The sum of the products of σ1 and fiux2, σ2 and fiux3, and σ0 and fiux1 can be determined as the soft error rate of the electronic device.

[0067] In one embodiment, the process for evaluating the soft error rate of an electronic device in a specific embodiment is as follows:

[0068] In this embodiment, the soft error rate of electronic devices is determined through irradiation tests and the data obtained from the irradiation tests. The irradiation test platform includes a surface source, a de-energizing plate, a test board, a programmable power supply, a computer, and semiconductor devices.

[0069] First, three types of energy reduction plates of different thicknesses can be set between the surface source and the electronic device. The thickness of the energy reduction plate can be determined based on the maximum penetration thickness of the particles. Specifically, the maximum penetration thickness of the particles can be determined based on the type of energy reduction plate and the type of radiation source. After determining the maximum penetration thickness of the particles, the maximum penetration thickness can be divided, such as by dividing the maximum penetration thickness into a certain number of equidistant divisions to obtain a certain number of equidistant division results. Finally, the thickness of the energy reduction plate is determined based on the equidistant division results. The number of divisions and the division method can be determined based on experimental precision and efficiency.

[0070] After determining the three thicknesses of the de-energy sheet, three sets of experiments can be conducted to obtain the single-event flip-off (SIF) cross-sectional values ​​under the three sets of experiments. Specifically, the thickness of the de-energy sheet A can be 0 μm (without the de-energy sheet), in which case the SIF cross-sectional value of the electronic device can be obtained when the surface source directly irradiates the electronic device. The thickness of the de-energy sheet B is the thickness d1 set according to the maximum penetration thickness of the particles, in which case the SIF cross-sectional value of the electronic device can be obtained when the surface source irradiates the electronic device through the de-energy sheet. The thickness of the de-energy sheet C is the thickness d2 set according to the maximum penetration thickness of the particles, in which case the SIF cross-sectional value of the electronic device can be obtained when the surface source irradiates the electronic device through the de-energy sheet.

[0071] Correspondingly, the scenario of a body source irradiating an electronic device can be simulated to obtain the corresponding surface particle flux D4' emitted by the body source material inside the body source, the scenario of a body source irradiating an electronic device can be simulated to obtain the corresponding surface particle flux D5' emitted by the body source material inside the body source, and the scenario of a body source irradiating an electronic device can be simulated to obtain the corresponding surface particle flux D6' emitted by the body source material inside the body source.

[0072] In simulating the situation where a surface source irradiates electronic devices through a de-energizer, a volume source simulation model can be established using any simulation method such as Monte Carlo simulation. This allows for the simulation of the surface source irradiating electronic devices through a de-energizer, thereby obtaining the corresponding particle flux on each surface.

[0073] Finally, after obtaining the single-event flip cross-section value and surface particle flux corresponding to each thickness, the soft error rate of the electronic device can be determined by the sum of the products of the single-event flip cross-section value and the surface particle flux corresponding to each thickness.

[0074] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0075] Based on the same inventive concept, this application also provides a soft error evaluation apparatus for electronic devices to implement the soft error evaluation method for electronic devices described above. The solution provided by this apparatus is similar to the implementation scheme described in the above method. Therefore, the specific limitations of one or more embodiments of the soft error evaluation apparatus for electronic devices provided below can be found in the limitations of the soft error evaluation method for electronic devices described above, and will not be repeated here.

[0076] In one embodiment, such as Figure 5 As shown, a soft error assessment device for electronic devices is provided, comprising: a first data acquisition module 502, a second data acquisition module 504, and a soft error rate determination module 506, wherein:

[0077] The first data acquisition module 502 is used to acquire the single-particle flip section value combination of the electronic device when the surface source is irradiated by the energy reduction plate combination.

[0078] The second data acquisition module 504 is used to obtain the surface particle flux combination by simulating the situation of the electronic device being irradiated by the bulk source. The surface particle flux combination corresponds one-to-one with the single particle flip cross section value combination obtained when the surface source is irradiated by the electronic device through the energy reduction plate combination.

[0079] The soft error rate determination module 506 is used to determine the soft error rate of the electronic device based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle flux.

[0080] In one embodiment, the first data acquisition module is used to acquire, when an electronic device is irradiated by a surface source through a de-energizer of at least three thicknesses, the single-particle flip-off cross-section value of the electronic device corresponding to each of the thicknesses, wherein the combination of single-particle flip-off cross-section values ​​includes each of the single-particle flip-off cross-section values, and each of the thicknesses is set at equal intervals according to the maximum penetration thickness of the particles.

[0081] In one embodiment, the second data acquisition module is used to simulate the situation of a bulk source irradiating an electronic device, and to obtain the corresponding surface particle flux emitted by a bulk source material with at least three thicknesses inside the bulk source, wherein the combination of surface particle fluxes includes each of the surface particle fluxes.

[0082] The soft error rate determination module, wherein the combination of single-event flip cross-section values ​​includes each single-event flip cross-section value, and the combination of surface particle fluxes includes each surface particle flux, is used to determine the soft error rate of the electronic device by summing the products of each single-event flip cross-section value and each surface particle flux in the combination of single-event flip cross-section values ​​and the combination of surface particle fluxes, wherein the single-event flip cross-section value and the surface particle flux correspond one-to-one.

[0083] In one embodiment, the first data acquisition module is used to acquire the total alpha particle fluence and particle flip number of the electronic device when the surface source irradiates the electronic device through the energy reduction plate; and to determine the single particle flip cross-section value based on the total alpha particle fluence, the particle flip number and the total device capacity of the electronic device.

[0084] Each module in the aforementioned soft error assessment device for electronic devices can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in hardware within or independently of the processor in a computer device, or stored in software within the memory of the computer device, so that the processor can invoke and execute the operations corresponding to each module.

[0085] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 6 As shown, the computer device includes a processor, memory, communication interface, display screen, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When executed by the processor, the computer program implements a soft error assessment method for electronic devices. The display screen can be an LCD screen or an e-ink screen. The input devices can be a touch layer covering the display screen, buttons, a trackball, or a touchpad mounted on the computer device casing, or an external keyboard, touchpad, or mouse.

[0086] Those skilled in the art will understand that Figure 6 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0087] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps of the soft error assessment method for the electronic device described above.

[0088] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, which, when executed by a processor, implements the steps of the soft error assessment method for the above-described electronic device.

[0089] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps of the soft error assessment method for the above-described electronic device.

[0090] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0091] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0092] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for evaluating soft errors in electronic devices, characterized in that, The method includes: When an electronic device is irradiated by a surface source through a combination of de-energizers, the combination of single-particle flip-off (SPO) cross-sectional values ​​of the electronic device is obtained; the combination of SPO cross-sectional values ​​includes SPO cross-sectional values ​​corresponding to de-energizers of different thicknesses. By simulating the scenario of a bulk source irradiating an electronic device, a combination of surface particle fluxes is obtained. This combination corresponds to the combination of single-particle flip-off cross-section values ​​obtained when the surface source irradiates the electronic device through a de-energizer. The combination of surface particle fluxes includes surface particle fluxes with different bulk source thicknesses. The bulk source thickness corresponds to the thickness of the de-energizer. The single-particle flip-off cross-section values ​​in the combination of single-particle flip-off cross-section values ​​and the surface particle fluxes in the combination of surface particle fluxes correspond to the thickness of the de-energizer and the bulk source thickness. The soft error rate of the electronic device is determined based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle flux.

2. The method according to claim 1, characterized in that: The method of obtaining the single-particle flip-off cross-section value combination of the electronic device when the surface source is irradiated by the energy degrading sheet combination includes: obtaining the single-particle flip-off cross-section value of the electronic device corresponding to each of the three thicknesses when the surface source is irradiated by the energy degrading sheet combination, wherein the single-particle flip-off cross-section value combination includes each of the single-particle flip-off cross-section values.

3. The method according to claim 1, characterized in that: The step of simulating the situation of irradiating electronic devices with a bulk source to obtain the surface particle flux combination includes: simulating the situation of irradiating electronic devices with a bulk source to obtain the corresponding surface particle flux emitted by a bulk source material with a thickness of at least three segments inside the bulk source, and the surface particle flux combination includes each of the surface particle fluxes.

4. The method according to claim 2 or 3, characterized in that, The thicknesses described are set at equal intervals based on the maximum penetration thickness of the particles.

5. The method according to claim 1, characterized in that, Obtaining the single-particle flip-off cross-section value of an electronic device when a surface source is used to irradiate the device through a de-energizer, including: When an electronic device is irradiated by a surface source through a de-energizer, the total fluence of alpha particles and the number of single-particle flips on the surface of the electronic device are obtained. The single-particle flip cross-section value is determined based on the total alpha particle fluence, the number of single-particle flips, and the total device capacity of the electronic device.

6. The method according to claim 1, characterized in that, The combination of single-particle flip-off cross-section values ​​includes each of the single-particle flip-off cross-section values, and the combination of surface particle fluxes includes each of the surface particle fluxes. The determination of the soft error rate of the electronic device based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle flux includes: The sum of the products of each single-particle flip-off cross-section value and each surface particle flux in the combination of single-particle flip-off cross-section values ​​and the combination of surface particle fluxes is determined as the soft error rate of the electronic device, and the single-particle flip-off cross-section value and the surface particle flux correspond one-to-one.

7. A soft error assessment device for electronic devices, characterized in that, The device includes: The first data acquisition module is used to acquire the single-particle flip-off cross-section value combination of the electronic device when the surface source is irradiated by the energy degrading sheet combination; the single-particle flip-off cross-section value combination includes the single-particle flip-off cross-section value corresponding to energy degrading sheets of different thicknesses. The second data acquisition module is used to simulate the situation where a surface source irradiates an electronic device to obtain a combination of surface particle fluxes. The surface particle fluxes correspond one-to-one with the single-particle flip-off cross-section values ​​obtained when the surface source irradiates the electronic device through a de-energizer. The combination of surface particle fluxes includes surface particle fluxes with different surface source thicknesses. The surface source thickness corresponds to the thickness of the de-energizer. The single-particle flip-off cross-section values ​​in the combination of single-particle flip-off cross-section values ​​and the surface particle fluxes in the combination of surface particle fluxes correspond to the thickness of the de-energizer and the thickness of the surface source. The soft error rate determination module is used to determine the soft error rate of the electronic device based on the combination of single-particle flip-off cross-section values ​​and the combination of surface particle flux.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

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