High-voltage, high-power semiconductor real-time temperature measurement system and method

Abstract

The application provides a high-voltage and high-power semiconductor real-time temperature measuring system and method, which comprises a heat sink, a pressure-occupancy conversion circuit and a controller; wherein the pressure-occupancy conversion circuit comprises an NTC resistor; the NTC resistor and the high-voltage and high-power semiconductor are mounted on the heat sink, and the emitter of the high-voltage and high-power semiconductor is connected with the heat sink; the temperature measuring voltage is connected to both ends of the pressure-occupancy conversion circuit, and the anode of the NTC resistor is connected with the temperature measuring voltage; the pressure-occupancy conversion circuit, the NTC resistor, the high-voltage and high-power semiconductor, the heat sink and the temperature measuring voltage are grounded; the pressure-occupancy conversion circuit is used for obtaining the NTC resistor value and converting the NTC resistor value into the duty cycle information; the controller is connected with the pressure-occupancy conversion circuit, and is used for obtaining the core temperature of the high-voltage and high-power semiconductor according to the real-time duty cycle signal. The application can solve the problem of insufficient NTC resistor voltage resistance when the high-voltage and high-power semiconductor is measured in real time and the controller interference problem caused by the introduction of the NTC resistor.

Description

Technical Field

[0001] This invention relates to the field of power systems, and more particularly to a real-time temperature measurement system and method for high-voltage, high-power semiconductors. Background Technology

[0002] With the continuous maturation of high-power power electronics technology, the advantages of high-voltage direct current (HVDC) transmission systems in terms of economy, stability, and flexibility in large-capacity, long-distance transmission are becoming increasingly prominent. High-voltage, high-power semiconductors are the cornerstone of this technology, but due to limitations in the development of high-insulation withstand voltage NTC resistors, the measurement of the core temperature of these high-power semiconductors has always been a problem that the industry has been eager to solve.

[0003] Traditional semiconductor temperature measurement methods involve detecting the temperature of the NTC resistor in the semiconductor heatsink and then calculating the chip's real-time junction temperature based on the calculated losses and the thermal resistance parameters between the chip and the heatsink. This method is widely used in traditional power electronic products, but it presents two problems for high-voltage, high-power semiconductors: firstly, there are no NTC resistors on the market with an insulation withstand voltage exceeding 3000V; secondly, directly mounting such a high-current NTC resistor on the heatsink can cause strong interference, leading to control board malfunctions.

[0004] In summary, there is currently a lack of a real-time temperature measurement method for high-voltage, high-power semiconductors. Summary of the Invention

[0005] This invention proposes a high-voltage, high-power semiconductor real-time temperature measurement system, capable of real-time temperature measurement of high-voltage, high-power semiconductors. It solves the problems of insufficient withstand voltage of NTC resistors and controller interference caused by the introduction of NTC resistors. The system includes:

[0006] Heat sink, voltage conversion circuit and controller; wherein, the voltage conversion circuit includes NTC resistors;

[0007] The NTC resistor and the high-voltage, high-power semiconductor are mounted on a heat sink, and the emitter of the high-voltage, high-power semiconductor is connected to the heat sink.

[0008] The two ends of the voltage conversion circuit are connected to the temperature measuring voltage, and the positive terminal of the NTC resistor is connected to the temperature measuring voltage.

[0009] The voltage conversion circuit, NTC resistor, high-voltage high-power semiconductor, heat sink and temperature measurement voltage are all grounded.

[0010] The voltage-to-duty cycle conversion circuit is used to: obtain the NTC resistance value and convert the NTC resistance value into duty cycle information;

[0011] The controller is connected to the duty cycle conversion circuit and is used to calculate the real-time core temperature of the high-voltage high-power semiconductor through an algorithm based on the real-time measured duty cycle signal.

[0012] This invention proposes a real-time temperature measurement method for high-voltage, high-power semiconductors, applied to the aforementioned real-time temperature measurement system for high-voltage, high-power semiconductors. This method enables real-time temperature measurement of high-voltage, high-power semiconductors and solves the problems of insufficient withstand voltage of NTC resistors and controller interference caused by the introduction of NTC resistors. The method includes:

[0013] Obtain the NTC resistor value;

[0014] Convert NTC resistor values ​​into duty cycle information;

[0015] The real-time core temperature of the high-voltage, high-power semiconductor is obtained based on the duty cycle signal measured in real time.

[0016] In this embodiment of the invention, a heat sink, a voltage-to-duty cycle conversion circuit, and a controller are included. The voltage-to-duty cycle conversion circuit includes an NTC resistor. The NTC resistor and a high-voltage, high-power semiconductor are mounted on the heat sink, and the emitter of the high-voltage, high-power semiconductor is connected to the heat sink. A temperature-measuring voltage is connected to both ends of the voltage-to-duty cycle conversion circuit, and the positive terminal of the NTC resistor is connected to the temperature-measuring voltage. The voltage-to-duty cycle conversion circuit, the NTC resistor, the high-voltage, high-power semiconductor, the heat sink, and the temperature-measuring voltage are all grounded. The voltage-to-duty cycle conversion circuit is used to: acquire the NTC resistor value and convert the NTC resistor value into duty cycle information. The controller is connected to the voltage-to-duty cycle conversion circuit through an isolation circuit and is used to obtain the real-time core temperature of the high-voltage, high-power semiconductor based on the real-time measured duty cycle signal. In the above process, the NTC resistor and the high-voltage high-power semiconductor are mounted on the heat sink, and the emitter of the high-voltage high-power semiconductor is connected to the heat sink; the two ends of the voltage-to-voltage conversion circuit are connected to the temperature measuring voltage, and the positive terminal of the NTC resistor is connected to the temperature measuring voltage; the voltage-to-voltage conversion circuit, the NTC resistor, the high-voltage high-power semiconductor, the heat sink, and the temperature measuring voltage share a common ground, thus avoiding the problem of insufficient insulation withstand voltage of the NTC resistor; in addition, since the temperature measuring voltage does not come from the controller, the controller interference problem caused by the introduction of the NTC resistor is solved. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. In the drawings:

[0018] Figure 1 This is a schematic diagram of a high-voltage, high-power semiconductor real-time temperature measurement system in an embodiment of the present invention. Figure 1 ;

[0019] Figure 2 This is a schematic diagram of a high-voltage, high-power semiconductor real-time temperature measurement system in an embodiment of the present invention. Figure 2 ;

[0020] Figure 3 This is a schematic diagram of a high-voltage, high-power semiconductor real-time temperature measurement system in an embodiment of the present invention. Figure 3 ;

[0021] Figure 4 This is a circuit diagram of the driving power supply in an embodiment of the present invention;

[0022] Figure 5 This is a circuit diagram of the voltage-to-duty switching circuit in an embodiment of the present invention;

[0023] Figure 6 This is a schematic diagram of a high-voltage, high-power semiconductor real-time temperature measurement system in an embodiment of the present invention. Figure 4 ;

[0024] Figure 7 This is a flowchart illustrating the process of the controller calculating the measured temperature value in an embodiment of the present invention;

[0025] Figure 8 This is a flowchart of a real-time temperature measurement method for high-voltage, high-power semiconductors in an embodiment of the present invention. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. Here, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention.

[0027] In the description of this specification, the terms "comprising," "including," "having," and "containing" are open-ended terms, meaning that they include but are not limited to. The terms "an embodiment," "a specific embodiment," "some embodiments," and "for example," etc., refer to specific features, structures, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, or characteristics described can be combined in any suitable manner in one or more embodiments or examples. The order of steps involved in the various embodiments is used to illustrate the implementation of this application, and the order of steps is not limited and can be adjusted appropriately as needed.

[0028] First, the terminology used in the embodiments of the present invention will be explained.

[0029] IGBT: Insulated Gate Bipolar Transistor, is a composite fully controllable voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Insulated Gate Field Effect Transistor), combining the advantages of high input impedance of MOSFET and low on-state voltage drop of GTR.

[0030] IGCT: Integrated Gate-Commutated Thyristor. Some manufacturers also call it GCT (Gate-Commutated Thyristor).

[0031] Figure 1 This is a schematic diagram of a high-voltage, high-power semiconductor real-time temperature measurement system in an embodiment of the present invention. Figure 1 The high-voltage, high-power semiconductor real-time temperature measurement system includes: a heat sink, a voltage conversion circuit, and a controller; the voltage conversion circuit includes an NTC resistor.

[0032] The NTC resistor and the high-voltage, high-power semiconductor are mounted on a heat sink, and the emitter of the high-voltage, high-power semiconductor is connected to the heat sink.

[0033] The two ends of the voltage conversion circuit are connected to the temperature measuring voltage, and the positive terminal of the NTC resistor is connected to the temperature measuring voltage.

[0034] The voltage conversion circuit, NTC resistor, high-voltage high-power semiconductor, heat sink and temperature measurement voltage are all grounded.

[0035] The voltage-to-duty cycle conversion circuit is used to: obtain the NTC resistance value and convert the NTC resistance value into duty cycle information;

[0036] The controller is connected to the duty cycle conversion circuit and is used to obtain the real-time core temperature of the high-voltage high-power semiconductor based on the real-time measured duty cycle signal.

[0037] In the above embodiment, the NTC resistor and the high-voltage high-power semiconductor are mounted on a heat sink, and the emitter of the high-voltage high-power semiconductor is connected to the heat sink; the two ends of the voltage-to-voltage conversion circuit are connected to the temperature measuring voltage, and the positive terminal of the NTC resistor is connected to the temperature measuring voltage; the voltage-to-voltage conversion circuit, the NTC resistor, the high-voltage high-power semiconductor, the heat sink, and the temperature measuring voltage share a common ground, thus avoiding the problem of insufficient insulation withstand voltage of the NTC resistor; in addition, since the temperature measuring voltage does not come from the controller, the controller interference problem caused by the introduction of the NTC resistor is solved.

[0038] Specifically, high-voltage, high-power semiconductors include IGBTs and IGCTs. The core temperature of a high-voltage, high-power semiconductor is its temperature value, and the heat sink can be a water-cooled heat sink. The temperature measurement voltage is 5V. In the voltage divider circuit, the voltage divider resistor is connected to the temperature measurement voltage, and the NTC resistor is connected to the voltage divider resistor.

[0039] Figure 2 This is a schematic diagram of a high-voltage, high-power semiconductor real-time temperature measurement system in an embodiment of the present invention. Figure 2 In one embodiment, the system further includes a transformer, the transformer including a primary side, a first secondary side, and a second secondary side;

[0040] The two ends of the primary side are connected to the controller power circuit;

[0041] The two ends of the first secondary side are connected to the driving circuit of the high-voltage high-power semiconductor, and output the driving positive voltage of the high-voltage high-power semiconductor;

[0042] The two ends of the second secondary side are connected to the driving circuit of the high-voltage high-power semiconductor, and output the driving negative voltage of the high-voltage high-power semiconductor.

[0043] Figure 3 This is a schematic diagram of a high-voltage, high-power semiconductor real-time temperature measurement system in an embodiment of the present invention. Figure 3 In one embodiment, the system further includes a voltage conversion circuit connected to the positive drive voltage of the high-voltage, high-power semiconductor for converting the positive drive voltage into a temperature-sensing voltage. Here, the temperature-sensing voltage, drive ground, high-voltage, high-power semiconductor emitter, and the heatsink on which the NTC resistor is mounted share a common ground.

[0044] The temperature measurement voltage (5V) is supplied to the NTC resistor through the voltage divider resistor in the voltage-duty conversion circuit. When the temperature is different, the voltage of the NTC resistor is also different, and finally the voltage-duty conversion circuit outputs different duty cycles.

[0045] In one embodiment, the drive power supply circuit uses a forward converter. Figure 4 The circuit diagram of the forward converter in this embodiment of the invention is shown. A forward converter with a center tap converts the stable voltage on the primary side into stable positive and negative voltages on the secondary side, which serve as the driving positive and negative voltages for high-voltage, high-power semiconductors.

[0046] It should be noted that high-voltage, high-power semiconductors are typically mounted on a heat sink, which is also connected to the emitter of the semiconductor. Therefore, the heat sink shares the same electromotive force as the GND of the drive power supply. In this case, the NTC resistor is mounted on the heat sink, and a +5V temperature measurement voltage is supplied to the voltage conversion circuit. This design avoids the problem of insufficient insulation withstand voltage of the NTC resistor.

[0047] Figure 5This is a circuit diagram of a voltage-to-duty time conversion circuit in an embodiment of the present invention. This circuit converts the NTC resistor value into a duty cycle signal. The voltage-to-duty time conversion circuit is mainly composed of a 555 timer chip. The voltage divider resistor R_A has a fixed resistance value, while the NTC resistor exhibits different resistance values ​​depending on the temperature. Therefore, the voltage input to the 555 timer chip is also different, resulting in different output duty cycles. In one embodiment, the duty cycle calculation formula of the voltage-to-duty time conversion circuit is:

[0048]

[0049] Where D represents the duty cycle information; R NTC R is the NTC resistor value. A This represents the voltage divider resistor value in the voltage conversion circuit.

[0050] Figure 6 This is a schematic diagram of a high-voltage, high-power semiconductor real-time temperature measurement system in an embodiment of the present invention. Figure 4 In one embodiment, the system further includes a high-voltage isolation circuit connected to the voltage-duty conversion circuit and the controller respectively, for: high-voltage isolation of the duty cycle information output by the voltage-duty conversion circuit;

[0051] The controller is specifically used to obtain the real-time core temperature of high-voltage high-power semiconductors based on the duty cycle signal after high-voltage isolation.

[0052] In one embodiment, the isolation method of the high-voltage isolation circuit includes one or any combination of capacitance isolation, optical isolation, and electromagnetic isolation.

[0053] In one embodiment, the voltage conversion circuit is located on the driver board, and the controller is located on the control board.

[0054] Since the duty cycle conversion circuit is located on the driver board and the controller is located on the control board, and since the high voltage isolation circuit isolates the duty cycle information output by the duty cycle conversion circuit, the temperature measurement voltage does not come from the controller, thus solving the controller interference problem caused by the introduction of the NTC resistor.

[0055] Figure 7 This is a flowchart illustrating the controller's calculation of temperature values ​​in an embodiment of the present invention. In one embodiment, the controller is specifically used for:

[0056] Step 701: Store the duty cycle signal after high voltage isolation into a FIFO and remove abnormal data from the duty cycle signal after high voltage isolation to obtain the filtered duty cycle signal.

[0057] Step 702: Perform sliding window filtering on the filtered duty cycle signal to obtain stable duty cycle data;

[0058] Step 703: Based on the correspondence between duty cycle data and the temperature value of NTC resistor, obtain the temperature value of NTC resistor corresponding to stable duty cycle data;

[0059] Step 704: Calculate the real-time core temperature of the high-voltage high-power semiconductor based on the temperature value of the NTC resistor, the thermal resistance parameters of the high-voltage high-power semiconductor, and the loss value under the current operating conditions.

[0060] Specifically, to obtain stable duty cycle data by performing sliding window filtering on the filtered duty cycle signal, we need to calculate the average of the 256 most recent data points of the filtered duty cycle signal in the FIFO.

[0061] Since the NTC resistor and the high-voltage, high-power semiconductor are mounted on a heat sink, the temperature of the NTC resistor is the real-time temperature of the heat sink. Furthermore, the core temperature of the high-voltage, high-power semiconductor can be obtained from the real-time temperature of the heat sink. The real-time core temperature of the high-voltage, high-power semiconductor can be calculated using the following formula:

[0062] T x =T NTC +P·R

[0063] Among them, T x The core temperature of high-voltage, high-power semiconductors; T NTC is the temperature value of the NTC resistor; P is the loss value of the high-voltage, high-power semiconductor under the current operating conditions; R is the thermal resistance parameter of the high-voltage, high-power semiconductor.

[0064] This invention also proposes a real-time temperature measurement method for high-voltage, high-power semiconductors, applicable to the aforementioned real-time temperature measurement system for high-voltage, high-power semiconductors. Figure 8 The flowchart of the real-time temperature measurement method for high-voltage, high-power semiconductors in this embodiment of the invention includes:

[0065] Step 801: Obtain the NTC resistor value;

[0066] Step 802: Convert the NTC resistor value into duty cycle information;

[0067] Step 803: Obtain the real-time core temperature of the high-voltage high-power semiconductor based on the real-time measured duty cycle signal.

[0068] In summary, the system and method proposed in the embodiments of the present invention have the following beneficial effects:

[0069] First, it solves the problem of the inability to measure the temperature of high-voltage, high-power semiconductors in real time. The circuit is simple, low-cost, highly reliable, and practical, effectively filling the gap in this field.

[0070] First, it can solve the problem of insufficient voltage withstand capability of NTC resistors on the market;

[0071] Third, it can solve the controller interference problem caused by the introduction of NTC resistors.

[0072] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A high-voltage high-power semiconductor real-time temperature measurement system, characterized in that, The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system.

2. The high-voltage high-power semiconductor real-time temperature measuring system according to claim 1, wherein The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system.

3. The high-voltage high-power semiconductor real-time temperature measuring system of claim 1, wherein, The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. Wherein, D is the duty cycle information; R NTC is the NTC resistance value; R A is the voltage division resistance value in the voltage-to-current conversion circuit.

4. The high-voltage high-power semiconductor real-time temperature measuring system of claim 1, wherein, The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system.

5. The high-voltage high-power semiconductor real-time temperature measuring system of claim 4, wherein, The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system.

6. The high-voltage high-power semiconductor real-time temperature measuring system of claim 4, wherein the temperature sensor is a thermistor. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system.

7. The high-voltage high-power semiconductor real-time temperature measuring system of claim 1, wherein, The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system.

8. A high-voltage high-power semiconductor real-time temperature measurement method, characterized in that, The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time temperature measuring system. The application relates to a high-voltage and high-power semiconductor real-time

Images