Rear nozzle unit and substrate processing device including the same

Abstract

A substrate processing apparatus may include a processing module including at least one process chamber for performing desired processes on a substrate, and an indexing module for transferring the substrate from an external location to the processing module. The at least one process chamber may include a support unit on which the substrate is placed, and a rear nozzle unit disposed below the bottom surface of the substrate. The rear nozzle unit may include a skirt, at least one rear nozzle for supplying a cleaning liquid to the bottom surface of the substrate, and a gas nozzle for supplying a gas to the bottom surface of the substrate. The skirt may include a body, and a plurality of first flow channels and a plurality of second flow channels formed within the body for supplying a gas to the bottom surface of the substrate.

Description

[0001] This application claims priority from Korean Invention Application No. 10-2020-0187302 filed with the Korean Intellectual Property Office on December 30, 2020. Technical Field

[0002] Exemplary embodiments of the present invention relate to a rear nozzle unit and a substrate processing apparatus including the rear nozzle unit. More specifically, exemplary embodiments of the present invention relate to a rear nozzle unit capable of improving cleaning and drying effects on a substrate and a substrate processing apparatus including the rear nozzle unit. Background Art

[0003] Integrated circuit devices or display devices can be manufactured using substrate processing equipment that includes various process chambers, such as deposition chambers, etching chambers, coating chambers, cleaning chambers, and drying chambers. During the process of manufacturing the integrated circuit device or display device, various impurities, such as particulate matter, organic contaminants, and metallic impurities, may be generated during the predetermined process performed on the substrate. If these impurities remain on the top or bottom surface of the substrate, these remaining impurities may cause defects in the substrate, thereby reducing the performance and reliability of the integrated circuit device or display device manufactured using the substrate.

[0004] Conventional substrate processing apparatuses generally include a rear nozzle unit comprising a rear nozzle and a gas nozzle to remove particles remaining on the bottom surface of the substrate during cleaning and drying processes. However, these conventional rear nozzles and gas nozzles can only spray cleaning liquid and gas in a direction perpendicular to the bottom surface of the substrate. Consequently, the efficiency of the cleaning process using these rear nozzles and gas nozzles for cleaning the bottom surface of the substrate may be reduced. Furthermore, the conventional gas nozzles can only supply gas in a direction perpendicular to the bottom surface of the substrate, which may also reduce the efficiency of the drying process for drying the bottom surface of the substrate. Summary of the Invention

[0005] Technical issues

[0006] One aspect of the present invention provides a rear nozzle unit capable of improving cleaning and drying effects on a substrate.

[0007] Another aspect of the present invention provides a process chamber including a rear nozzle unit capable of improving cleaning and drying effects of a substrate.

[0008] Another aspect of the present invention provides a substrate processing apparatus including a rear nozzle unit capable of improving cleaning and drying effects of a substrate.

[0009] Technical Solution

[0010] According to one aspect of the present invention, a rear nozzle unit is provided, comprising a skirt, at least one rear nozzle, and a gas nozzle. The skirt can be disposed below the bottom surface of a substrate. The at least one rear nozzle protrudes from the skirt and can supply a cleaning liquid to the bottom surface of the substrate. The gas nozzle can protrude from the skirt and can supply a gas to the bottom surface of the substrate. The skirt can include a body and a plurality of flow channels. The plurality of flow channels can be formed within the body and can supply a gas to the bottom surface of the substrate.

[0011] In an exemplary embodiment, the gas nozzle can supply the gas in a direction substantially perpendicular to the bottom surface of the substrate, and the multiple flow channels can supply the gas in a direction substantially parallel to the bottom surface of the substrate and in a direction inclined at a predetermined angle relative to the bottom surface of the substrate.

[0012] In an exemplary embodiment, the gas nozzle and the plurality of flow channels may supply the gas to the bottom surface of the substrate during supply of the cleaning liquid from the at least one rear nozzle to the bottom surface of the substrate.

[0013] In an exemplary embodiment, the skirt may include a plurality of first flow channels supplying the gas in a direction substantially parallel to a bottom surface of the substrate.

[0014] In an exemplary embodiment, the plurality of first flow channels may be substantially spaced apart along a circumference of the skirt.

[0015] In an exemplary embodiment, the plurality of first flow channels are respectively capable of preventing the cleaning fluid from flowing into the body.

[0016] In an exemplary embodiment, the plurality of first flow channels are respectively formed upward in the body, bent downward in the body, and may extend in a direction substantially parallel to the bottom surface of the substrate.

[0017] In some exemplary embodiments, the skirt may include a plurality of second flow channels capable of supplying the gas at a predetermined tilt angle relative to the bottom surface of the substrate. For example, the tilt angle may be greater than approximately 0 degrees and less than or equal to approximately 90 degrees relative to a direction substantially perpendicular to the substrate.

[0018] In some exemplary embodiments, the gas supplied from the plurality of first flow channels and the plurality of second flow channels can resupply the cleaning liquid flowing along the body to the bottom surface of the substrate.

[0019] In some exemplary embodiments, the plurality of second flow channels may branch off from the plurality of first flow channels respectively and extend upward within the body.

[0020] In some exemplary embodiments, the skirt may include a plurality of guide members adjacent to each of the plurality of second flow channels. The plurality of guide members may guide the gas toward the bottom surface of the substrate. For example, the guide members may each protrude from the body at an angle greater than approximately 0 degrees and less than or equal to approximately 90 degrees relative to a direction substantially perpendicular to the substrate.

[0021] According to another aspect of the present invention, a process chamber is provided that includes a support unit and a rear nozzle unit. A substrate may be positioned on the support unit, and the rear nozzle unit may be disposed below the bottom surface of the substrate. The rear nozzle unit may include a skirt, at least one rear nozzle, and a gas nozzle. The at least one rear nozzle may supply a cleaning liquid to the bottom surface of the substrate, and the gas nozzle may supply a gas to the bottom surface of the substrate. The skirt may include a body and a plurality of flow channels. The plurality of flow channels may be disposed within the body and may supply a gas to the bottom surface of the substrate.

[0022] In an exemplary embodiment, the gas nozzle can supply the gas in a direction substantially perpendicular to the bottom surface of the substrate, and the multiple flow channels can supply the gas in a direction substantially parallel to the bottom surface of the substrate and in a direction inclined at a predetermined angle relative to the bottom surface of the substrate.

[0023] In an exemplary embodiment, the gas nozzle and the plurality of flow channels are capable of supplying the gas to the bottom surface of the substrate while the at least one rear nozzle supplies the cleaning liquid to the bottom surface of the substrate.

[0024] In some exemplary embodiments, the skirt may include a plurality of first flow channels capable of supplying the gas in a direction substantially parallel to the bottom surface of the substrate, and a plurality of second flow channels capable of supplying the gas at a predetermined inclination angle relative to the bottom surface of the substrate. For example, the predetermined inclination angle may be greater than approximately 0 degrees and less than or equal to approximately 90 degrees relative to a direction substantially perpendicular to the bottom surface of the substrate.

[0025] According to another aspect of the present invention, a substrate processing apparatus is provided that includes a processing module having at least one process chamber for performing a desired process on a substrate, and an indexing module for transferring the substrate from an external portion into the processing module. The at least one process chamber may include an upper support unit for placing the substrate and a rear nozzle unit disposed below the bottom surface of the substrate. The rear nozzle unit may include a skirt, at least one rear nozzle for supplying a cleaning liquid to the bottom surface of the substrate, and a gas nozzle for supplying a gas to the bottom surface of the substrate. The skirt may include a body and a plurality of first flow channels and a plurality of second flow channels formed within the body for supplying gas to the bottom surface of the substrate.

[0026] In an exemplary embodiment, the plurality of first flow channels can supply the gas in a direction substantially parallel to the bottom surface of the substrate, and the plurality of second flow channels can supply the gas at an inclination angle greater than about 0 degrees and less than or equal to about 90 degrees relative to the bottom surface of the substrate.

[0027] Technical Effects

[0028] According to an exemplary embodiment of the present invention, the rear nozzle unit may include a skirt having multiple flow channels capable of supplying the gas in a direction substantially parallel to the bottom surface of the substrate and in a direction inclined at a predetermined angle relative to the bottom surface of the substrate. Therefore, the cleaning liquid and / or gas can be supplied from the gas nozzle and the multiple flow channels toward the bottom surface of the substrate in multiple directions, including a direction substantially perpendicular to the bottom surface of the substrate, a direction substantially parallel to the bottom surface of the substrate, and a direction inclined at a predetermined angle relative to the bottom surface of the substrate. This significantly improves the efficiency of the cleaning and drying processes for the substrate, thereby improving the performance and reliability of integrated circuit devices including semiconductor devices or display devices including flat panel displays manufactured using the substrate processing apparatus.

[0029] The technical effects of the present invention are not limited to the above-mentioned technical effects, and various modifications and expansions can be made without departing from the scope of the idea and field of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A plan view of a substrate processing apparatus for illustrating an exemplary embodiment of the present invention;

[0031] Figure 2 is a plan view of a process chamber of a substrate processing apparatus for illustrating an exemplary embodiment of the present invention;

[0032] Figure 3 is a cross-sectional view of a process chamber of a substrate processing apparatus for illustrating an exemplary embodiment of the present invention;

[0033] Figure 4 is a cross-sectional view of a rear nozzle unit of a substrate processing apparatus for illustrating an exemplary embodiment of the present invention;

[0034] Figure 5 is a partially enlarged cross-sectional view of a skirt of a rear nozzle unit for explaining an exemplary embodiment of the present invention;

[0035] Figure 6 is a partially enlarged cross-sectional view of a skirt of a rear nozzle unit for illustrating some exemplary embodiments of the present invention;

[0036] Figure 7Graph showing the efficiency of removing particles in a chamber by using the skirt of a rear nozzle unit according to some exemplary embodiments of the present invention. DETAILED DESCRIPTION

[0037] The present invention can be implemented in various variations and can have various forms. The present invention is described in detail through various embodiments of the present invention. However, this is not intended to limit the present invention to a specific disclosed form, and it should be understood to include all variations, equivalents and substitutes within the scope of the concept and technology of the present invention. Similar figure numerals are used for similar components when describing the various drawings. Terms such as first and second can be used to describe various components, but the components should not be limited to the terms. The terms are only used to distinguish one component from other components. The terms used in this application are only used to describe specific embodiments and are not intended to limit the present invention. Singular expressions also include plural expressions unless otherwise clearly stated in the text. Terms such as "including", "having" or "having" described in this application should be understood to mean the presence of features, numbers, steps, actions, components, parts or their combinations recorded in the specification, and should not be understood to preclude the existence or additional possibility of one or more other features, numbers, steps, actions, components, parts or their combinations.

[0038] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms defined in commonly used dictionaries should be interpreted as having the same meaning as that in the context of the relevant art and should not be construed as having an ideal or overly formal meaning unless explicitly defined in this application.

[0039] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the accompanying drawings, the same components may be denoted by the same reference numerals, and repeated description of the same components may be omitted.

[0040] Figure 1 FIG. 1 is a plan view of a substrate processing apparatus for explaining an exemplary embodiment of the present invention.

[0041] See also Figure 1 The substrate processing apparatus of the exemplary embodiment may include an index module 20 and a processing module 55 .

[0042] The indexing module 20 can transfer a substrate from an external device to a processing module 55, where the processing module 55 can perform the desired processing on the substrate. In this case, the substrate can be used to manufacture integrated circuit devices, including semiconductor devices, or display devices, including flat panel displays. For example, the substrate can include a silicon wafer, a glass substrate, an organic substrate, a ceramic substrate, or the like.

[0043] The indexing module 20 may include a loading chamber 10 and a transfer frame 15. A carrier 25 capable of accommodating the substrate may be loaded into the loading chamber 10. For example, a front-opening unified pod (FOUP) may be used as the carrier 25. The carrier 25 may be transferred from the outside into the loading chamber 10 via an overhead transfer (OHT) and may be transferred from the loading chamber 10 to the outside.

[0044] The transfer frame 15 may transfer the substrate between the carrier 25 loaded in the load chamber 10 and the processing module 55 . The transfer frame 15 may include an indexing robot 30 and an indexing rail 35 .

[0045] The indexing robot 30 can move along the indexing rail 35 and transfer the substrate between the indexing module 20 and the processing module 55. For example, the indexing robot 30 can transfer the substrate between the carrier 25 and the buffer tank 60 while moving on the indexing rail 35.

[0046] like Figure 1 For example, the processing module 55 is not limited thereto, but can perform required processes including deposition, etching, coating, exposure, development, cleaning, and drying on the substrate. The processing module 55 may include a buffer chamber 40, a transfer chamber 45, a process chamber 50, a control unit (not shown), and the like.

[0047] The substrate transferred between the index module 20 and the processing module 55 may be temporarily placed in the buffer chamber 40. The buffer chamber 40 may be provided with a buffer tank 60 for placing the substrate. In an exemplary embodiment, a plurality of buffer tanks 60 may be provided in the buffer chamber 40, and a plurality of substrates may be placed in the buffer chamber 40.

[0048] The transfer chamber 45 can transfer the substrate between the buffer chamber 40 and the process chamber 50. The transfer chamber 45 can include a transfer robot 65 and a transfer rail 70. The transfer robot 65 can move along the transfer rail 70 to transfer the substrate between the buffer chamber 40 and the process chamber 50. For example, the transfer robot 65 can transfer the substrate located in the buffer tank 60 to the process chamber 50 while moving on the transfer rail 70.

[0049] In an exemplary embodiment, the substrate processing apparatus may include multiple process chambers 50. Within the process chambers 50, the required processes, including the deposition process, the etching process, the coating process, the exposure process, the development process, the cleaning process, and the drying process, may be performed, although not limited thereto. Furthermore, the multiple process chambers 50 may include, but are not limited to, deposition chambers, etching chambers, coating chambers, exposure chambers, development chambers, cleaning chambers, drying chambers, and the like. In this case, each process chamber 50 may include an openable and closable door for loading and unloading the substrate.

[0050] Figure 2 FIG. 1 is a plan view of a process chamber of a substrate processing apparatus for illustrating an exemplary embodiment of the present invention. Figure 3 FIG. 1 is a cross-sectional view of a process chamber of the substrate processing apparatus for illustrating an exemplary embodiment of the present invention.

[0051] See also Figure 2 and Figure 3 The process chamber 50 of the substrate processing apparatus may include a support unit 100, a liquid supply unit 200, a gas supply unit 300, a rear nozzle unit 400, a recovery unit 500, a control unit 600, etc. In this case, the process chamber 50 may include a cleaning chamber or a drying chamber.

[0052] A substrate may be placed on a support unit 100 disposed within the processing space of the process chamber 50. The support unit 100 may rotate the substrate while performing a desired process on the substrate. The support unit 100 may include a spin chuck 105, support pins 110, chuck pins 115, a rotation shaft 120, a first driving member 125, and the like.

[0053] The rotary chuck 105 may substantially have a circular plate shape, but the shape and size of the rotary chuck 105 may be changed according to the shape and size of the substrate. The rotary chuck 105 may have the support pins 110 and the chuck pins 115. In an exemplary embodiment, the rotary chuck 105 may include a plurality of support pins 110 and a plurality of chuck pins 115 to improve the stability of the substrate. The plurality of support pins 110 may contact the bottom surface of the substrate, and the plurality of chuck pins 115 may contact the side surface of the substrate. The support pins 110 may support the substrate when the required process is performed on the substrate in the process chamber 50, and the chuck pins 115 may keep the substrate in its original position.

[0054] like Figure 3 For example, the rotation shaft 120 may be connected to the lower portion of the rotation chuck 105, and the first driving component 125 may be coupled to the rotation shaft 120. The first driving component 125 may rotate the rotation shaft 120, thereby rotating the rotation chuck 105 and the substrate disposed thereon.

[0055] The liquid supply unit 200 can supply a predetermined liquid onto the substrate according to the process being performed on the substrate. For example, the predetermined liquid may include, but is not limited to, chemical liquid, organic solvent, deionized water, cleaning liquid, rinse liquid, etc. The liquid supply unit 200 may include a nozzle 205, a nozzle arm 210, a first movable shaft 215, a second driving member 220, and the like.

[0056] The nozzle 205 of the liquid supply unit 200 can supply the predetermined liquid onto the substrate positioned on the spin chuck 105. For example, the predetermined liquid can be sprayed onto the substrate from the nozzle 205 while the substrate is rotating on the spin chuck 105. In an exemplary embodiment, the liquid supply unit 200 may include a plurality of nozzles 205 that can be substantially arranged above the central portion of the substrate. The plurality of nozzles 205 can be provided on one side of the nozzle arm 210, and the other side of the nozzle arm 210 can be coupled to a first movable shaft 215. The second driving component 220 can move the first movable shaft 215 up and down and can rotate the first movable shaft 215. This allows for appropriate adjustment of the position of the nozzle 205 positioned above the substrate.

[0057] like Figure 2For example, the gas supply unit 300 can supply a predetermined gas onto the substrate. For example, the gas supply unit 300 can supply an inert gas such as nitrogen (N2) onto the substrate placed on the spin chuck 105. The gas supply unit 300 can include a first gas supply component 310 and a second gas supply component 315.

[0058] The first gas supply component 310 can be fixed to an upper portion of one side of the spin chuck 105 and can supply the gas to the substrate on the spin chuck 105. The second gas supply component 315 can be moved toward the upper center portion of the spin chuck 105 and can supply the gas to the substrate placed on the spin chuck 105.

[0059] Figure 4 FIG. 1 is a cross-sectional view of a rear nozzle unit of a substrate processing apparatus for explaining an exemplary embodiment of the present invention.

[0060] See also Figures 2 to 4 The rear nozzle unit 400 may include a support shaft 425, a rear nozzle 410, a gas nozzle 415, a skirt 420, and the like. In an exemplary embodiment, the rear nozzle unit 400 may perform a cleaning process or a drying process on the substrate W. For example, the rear nozzle unit 400 may be used to clean the bottom surface of the substrate or to dry the bottom surface of the substrate W.

[0061] The support shaft 410 of the rear nozzle unit 400 may be inserted into a shaft hole formed in the center of the rotation chuck 110 of the support unit 100. The support shaft 410 may not contact the rotation chuck 110 and may not rotate during the rotation of the rotation chuck 110.

[0062] In an exemplary embodiment, the rear nozzle unit 400 may include a plurality of rear nozzles 410. Each of the plurality of rear nozzles 410 may spray the cleaning liquid onto the bottom surface of the substrate W. For example, the cleaning liquid may include a chemical solution or deionized water. In an exemplary embodiment, some of the plurality of rear nozzles 410 may spray the deionized water onto the bottom surface of the substrate W, while the remaining plurality of rear nozzles 410 may supply the chemical solution onto the bottom surface of the substrate W. Alternatively, all of the plurality of rear nozzles 410 may selectively spray the chemical solution and the deionized water onto the bottom surface of the substrate W. The plurality of rear nozzles 410 may be respectively connected to a rear nozzle line 430 passing through a support shaft 425.

[0063] The rear nozzle unit 400 may include at least one gas nozzle 415. The at least one gas nozzle 415 may be connected to the gas supply line 435 and may spray gas onto the bottom surface of the substrate W. For example, the at least one gas nozzle 415 may supply the gas in a direction substantially perpendicular to the bottom surface of the substrate W. The gas may include an inert gas such as nitrogen (N2). In an exemplary embodiment, the at least one gas nozzle 415 may remove cleaning liquid remaining on the back surface of the substrate W. Optionally, the at least one gas nozzle 415 may also be used to dry the substrate W after cleaning the substrate W.

[0064] In an exemplary embodiment, the rear nozzle 410 and the gas nozzle 415 may pass through the skirt 420 and protrude from the surface of the skirt 420 toward the bottom surface of the substrate W. Specifically, the gas nozzle 415 may pass through the center portion of the skirt 420, and the rear nozzle 410 may pass through a portion adjacent to the center portion of the skirt 420. In this case, the gas nozzle 415 may be substantially higher than the rear nozzle 410. In other words, the gas nozzle 415 may be closer to the bottom surface of the substrate W than the rear nozzle 410. Furthermore, this prevents the cleaning liquid from flowing into the gas nozzle 415 while the cleaning liquid is being sprayed from the rear nozzle 410 onto the bottom surface of the substrate W.

[0065] Figure 5 It is a partially enlarged cross-sectional view of a skirt of a rear nozzle unit for explaining an exemplary embodiment of the present invention.

[0066] See also Figure 4 and Figure 5 The skirt 420 may be coupled to the support shaft 425 . The skirt 420 may have a substantially rounded surface structure, so that the cleaning liquid supplied to the bottom surface of the substrate W may flow down along the surface of the skirt 420 .

[0067] In an exemplary embodiment, the skirt 420 may include a body 450 and a plurality of flow channels 455 formed in the body 450. For example, the skirt 420 may include two, four, six, or eight flow channels 455 arranged at predetermined intervals along the circumference of the skirt 420. Figure 4For example, the multiple flow channels 455 and the gas nozzles 415 may be connected to the gas supply line 435. As indicated by the arrows, the multiple flow channels 455 can supply the cleaning liquid in a direction substantially parallel to the bottom surface of the substrate W while the cleaning liquid is being supplied from the rear nozzle 410 to the bottom surface of the substrate W and / or after the cleaning liquid has been supplied to the bottom surface of the substrate W. In this case, the gas supplied from the multiple flow channels 455 can be the same as the gas supplied from the gas nozzles 415. Furthermore, the flow channels 455 can resupply the cleaning liquid to the bottom surface of the substrate W after it has been supplied from the rear nozzle 410 to the bottom surface of the substrate W and then flows down the surface of the main body 450 of the skirt 420. Consequently, the flow channels 455 can significantly improve the cleaning effect on the substrate W. In other words, after the cleaning liquid is supplied from the rear nozzle 410 onto the bottom surface of the substrate W, the plurality of flow channels 455 can resupply the cleaning liquid flowing along the main body 450 of the skirt 450 in directions substantially perpendicular to the bottom surface of the substrate W, substantially parallel to the bottom surface of the substrate W, and inclined at a predetermined angle relative to the bottom surface of the substrate W, thereby significantly improving the efficiency of the cleaning process for the substrate W. In particular, when the substrate W is dried in the process chamber 50, the plurality of flow channels 455 and the gas nozzles 415 of the skirt 420 can supply the gas onto the bottom surface of the substrate W in a variety of directions, including directions substantially perpendicular to the bottom surface of the substrate W, substantially parallel to the bottom surface of the substrate W, and inclined at a predetermined angle relative to the bottom surface of the substrate W, thereby significantly improving the efficiency of the drying process for the substrate W.

[0068] In an exemplary embodiment, the plurality of flow channels 455 are configured to prevent the cleaning liquid from flowing into the skirt 420 during the supply of the cleaning liquid from the rear nozzle 410 onto the bottom surface of the substrate W and / or before the gas is supplied from the plurality of flow channels 455. To this end, the plurality of flow channels 455 are each formed upward within the body 450, bend downward within the body 450, and then extend in a direction substantially parallel to the bottom surface of the substrate W (i.e., substantially parallel to the spin chuck 105). As described above, the plurality of flow channels 455 are configured to effectively prevent the cleaning liquid from flowing into the body 450 of the skirt 420, thereby preventing the cleaning liquid from flowing into the skirt 420 during the cleaning process of the substrate W.

[0069] Figure 6 It is a partially enlarged cross-sectional view of a skirt of a rear nozzle unit for illustrating some exemplary embodiments of the present invention.

[0070] See also Figure 4 and Figure 6 In some exemplary embodiments, the skirt 460 may include a body 465 and a plurality of first flow channels 470 and a plurality of second flow channels 475 formed in the body 450. In some exemplary embodiments, the skirt 420 may include two, four, six, or eight first flow channels 470 arranged at predetermined intervals along the circumference of the skirt 420, and may include two, four, six, or eight second flow channels 475 branching from the first flow channels 450. The number of the first flow channels 470 and the second flow channels 475 may vary depending on the structure and size of the rear nozzle unit 400 and / or the structure and size of the process chamber 50. The plurality of first flow channels 470 and the plurality of second flow channels 475 may supply the gas to the bottom surface of the substrate W as indicated by the arrows.

[0071] like Figure 6 For example, the plurality of first flow channels 470 may be formed upward within the body 450, bend downward within the body 450, and then extend in a direction substantially parallel to the bottom surface of the substrate W. The second flow channels 475 may extend upward from the first flow channels 470 formed upward within the body 465 in a direction substantially perpendicular to the bottom surface of the substrate W at a predetermined inclination angle. For example, the second flow channels 475 may have an inclination angle greater than approximately 0 degrees and less than or equal to approximately 90 degrees.

[0072] In some exemplary embodiments, the skirt 460 may include a plurality of guide members 480 disposed at respective ends of the second flow channel 475. In this case, the plurality of guide members 480 may be integrally formed with the body 465. For example, the guide members 480 may protrude from the body 465 at an angle substantially perpendicular to the bottom surface of the substrate W that is greater than approximately 0 degrees and less than or equal to approximately 90 degrees. The plurality of guide members 480 can accurately eject the gas from the second flow channel 475 in a desired direction, thereby further enhancing the cleaning and drying effects on the substrate W. Furthermore, the guide members 480 protrude from the body 465 of the skirt 460, thereby effectively preventing the cleaning liquid from flowing into the skirt 460 through the second flow channel 475.

[0073] Figure 7 Graph showing the efficiency of removing particles from the cleaning chamber of the skirt using the rear nozzle unit according to some exemplary embodiments of the present invention. Figure 7 In FIG. 5 , the horizontal axis represents the inclination angle of the second flow channel of the skirt relative to the bottom surface of the substrate, and the vertical axis represents the amount of particles remaining on the bottom surface of the substrate.

[0074] Depend on Figure 7It can be seen that when the skirt having the plurality of first flow channels and the plurality of second flow channels is used to clean the bottom surface of the substrate, the substrate cleaning effect varies depending on the inclination angle of the skirt's second flow channels. In essence, when the skirt's second flow channels have an inclination angle of approximately 60 degrees and approximately 90 degrees relative to the bottom surface of the substrate, the substrate cleaning efficiency can be significantly improved.

[0075] See again Figure 2 and Figure 3 The recovery unit 500 may include a recovery container 520, a second movable shaft 525, a third driving component 530, and the like. The recovery unit 500 may collect the liquid supplied onto the substrate. While the liquid is being supplied from the liquid supply unit 200 to the substrate, the support unit 100 may rotate the substrate, thereby enabling the liquid to be supplied substantially uniformly to all surfaces of the substrate. In this case, the centrifugal force generated by the rotation of the substrate may cause droplets of the liquid to fly outward. The recovery unit 500 may recover the scattered droplets of the liquid.

[0076] The recovery container 520 may surround the spin chuck 105 and may have an open upper portion. For example, the recovery container 520 may have a cylinder shape. The recovery container 520 may include multiple recovery cups. In an exemplary embodiment, the recovery container 520 may include a first recovery cup 505, a second recovery cup 510, and a third recovery cup 515. In this case, the first to third recovery cups 505, 510, 515 may be configured to have multiple configurations for recovering liquids of different compositions. For example, the first recovery cup 505 may be configured at a substantially higher position than the second recovery cup 510, and the second recovery cup 510 may be configured at a substantially higher position than the third recovery cup 515. The first recovery cup 505, the second recovery cup 510, and the third recovery cup 515 may be connected to a first recovery line 535, a second recovery line 540, and a third recovery line 545, respectively. The liquid recovered through the first recovery line to the third recovery line 535, 540, 545 may be reused by a regeneration device (not shown).

[0077] like Figure 3 For example, the second movable shaft 525 can be moved upward and downward by the third driving member 530, so that the first to third recovery cups 505, 510, and 515 can be moved to the upper and lower parts of the spin chuck 105. In this case, the second movable shaft 525 and the third driving member 530 can respectively move the first to third recovery cups 505, 510, and 515 to the upper and lower parts of the spin chuck 105.

[0078] The control unit 600 can control the operations of the support unit 100, the liquid supply unit 200, the gas supply unit 300, the rear nozzle unit 400, and the recovery unit 500 according to the process performed on the substrate. For example, the control unit 600 can adjust the rotation speed of the spin chuck 105, the spraying of the nozzle 205, the operation of the rear nozzle unit 400, the movement of the recovery cups 505, 510, and 515, etc.

[0079] According to an exemplary embodiment of the present invention, a rear nozzle unit of a substrate processing apparatus may include a skirt having multiple flow channels capable of supplying gas in a direction substantially parallel to the bottom surface of the substrate and in a direction inclined at a predetermined angle. The rear nozzle unit can be used to effectively supply cleaning liquid to the bottom surface of the substrate, thereby significantly improving the efficiency of the substrate cleaning process. Furthermore, since the gas can be supplied from the multiple flow channels of the skirt toward the bottom surface of the substrate in multiple directions, the efficiency of the substrate drying process can be significantly improved. Therefore, the performance and reliability of integrated circuit devices including semiconductor devices or display devices including flat panel displays manufactured using the substrate processing apparatus can be improved.

[0080] While exemplary embodiments of the present invention are described above, it will be understood by those skilled in the art that various modifications and variations may be made to the present invention without departing from the spirit and scope of the invention as described in the appended claims.

Claims

1. A rear nozzle unit, characterized in that: include: A skirt seat is arranged below the bottom surface of the base plate; at least one rear nozzle protruding from the skirt and supplying a cleaning fluid onto the bottom surface of the substrate; as well as A gas nozzle protrudes from the skirt and supplies gas to the bottom surface of the substrate, Wherein, the skirt has: ontology; a plurality of first flow channels formed in the body and supplying gas in a direction parallel to the bottom surface of the substrate; and A plurality of second flow channels are formed in the body and supply the gas to the bottom surface of the substrate at a predetermined inclination angle, The plurality of first flow channels are respectively formed upward in the body, bent downward in the body, and extend in a direction parallel to the bottom surface of the substrate. The multiple first flow channels and the multiple second flow channels supply the gas during the period when the at least one rear nozzle supplies the cleaning liquid to the bottom surface of the substrate and / or after the cleaning liquid is supplied to the bottom surface of the substrate, so that the cleaning liquid flowing down the surface of the body of the skirt is re-supplied to the bottom surface of the substrate.

2. The rear nozzle unit according to claim 1, characterized in that The gas nozzle supplies the gas in a direction perpendicular to the bottom surface of the substrate, and the plurality of second flow channels supply the gas in a direction inclined at a predetermined angle with respect to the bottom surface of the substrate.

3. The rear nozzle unit according to claim 2, characterized in that The gas nozzle supplies the gas toward the bottom surface of the substrate while the at least one rear nozzle supplies the cleaning liquid toward the bottom surface of the substrate.

4. The rear nozzle unit according to claim 1, characterized in that The plurality of first flow channels are arranged at regular intervals along the circumference of the skirt.

5. The rear nozzle unit according to claim 4, characterized in that The plurality of first flow channels respectively prevent the cleaning liquid from flowing into the body.

6. The rear nozzle unit according to claim 1, characterized in that The plurality of second flow channels are respectively branched from the plurality of first flow channels and extend upward within the body.

7. The rear nozzle unit according to claim 1, characterized in that The inclination angle is greater than 0 degrees and less than or equal to 90 degrees relative to a direction perpendicular to the bottom surface of the substrate.

8. The rear nozzle unit according to claim 1, wherein: The skirt further includes a plurality of guide components respectively adjacent to the plurality of second flow channels, and the plurality of guide components guide the supply of the gas toward the bottom surface of the substrate.

9. The rear nozzle unit according to claim 8, characterized in that The guide members protrude from the body at an angle greater than 0 degrees and less than or equal to 90 degrees relative to a direction perpendicular to the bottom surface of the substrate.

10. An engineering chamber, characterized in that: include: A support unit, the upper portion of which is used to place a substrate; as well as The rear nozzle unit is arranged below the bottom surface of the substrate, The rear nozzle unit includes a skirt, at least one rear nozzle for supplying a cleaning liquid to the bottom surface of the substrate, and a gas nozzle for supplying a gas to the bottom surface of the substrate. The skirt has: ontology; a plurality of first flow channels formed in the body and supplying gas in a direction parallel to the bottom surface of the substrate; and A plurality of second flow channels are formed in the body and supply the gas to the bottom surface of the substrate at a predetermined inclination angle, The plurality of first flow channels are respectively formed upward in the body, bent downward in the body, and extend in a direction parallel to the bottom surface of the substrate. The multiple first flow channels and the multiple second flow channels supply the gas during the period when the at least one rear nozzle supplies the cleaning liquid to the bottom surface of the substrate and / or after the cleaning liquid is supplied to the bottom surface of the substrate, so that the cleaning liquid flowing down the surface of the body of the skirt is re-supplied to the bottom surface of the substrate.

11. The engineering chamber according to claim 10, characterized in that: The gas nozzle supplies the gas in a direction perpendicular to the bottom surface of the substrate, and the plurality of second flow channels supply the gas in a direction inclined with respect to the bottom surface of the substrate.

12. The engineering chamber according to claim 11, characterized in that The gas nozzle supplies the gas toward the bottom surface of the substrate while the at least one rear nozzle supplies the cleaning liquid toward the bottom surface of the substrate.

13. The engineering chamber according to claim 10, wherein: The angle formed by the inclination angle relative to the direction perpendicular to the bottom surface of the substrate is greater than 0 degrees and less than or equal to 90 degrees.

14. A substrate processing device, characterized in that: include: a processing module comprising at least one process chamber for performing a desired process on the substrate; as well as The transfer module moves the substrate from the outside to the processing module. The at least one engineering chamber comprises: A supporting unit, the upper portion of which is used to place the substrate; as well as The rear nozzle unit is arranged below the bottom surface of the substrate, The rear nozzle unit includes a skirt, at least one rear nozzle for supplying a cleaning liquid to the bottom surface of the substrate, and a gas nozzle for supplying a gas to the bottom surface of the substrate, wherein the skirt includes a body and a plurality of first flow channels and a plurality of second flow channels formed in the body and supplying a gas to the bottom surface of the substrate; The plurality of first flow channels are respectively formed upward in the body, bent downward in the body, and extended in a direction parallel to the bottom surface of the substrate to supply the gas in a direction parallel to the bottom surface of the substrate. The plurality of second flow channels supply the gas in a direction inclined at a predetermined angle relative to the bottom surface of the substrate. The multiple first flow channels and the multiple second flow channels supply the gas during the period when the at least one rear nozzle supplies the cleaning liquid to the bottom surface of the substrate and / or after the cleaning liquid is supplied to the bottom surface of the substrate, so that the cleaning liquid flowing down the surface of the body of the skirt is re-supplied to the bottom surface of the substrate.

15. The substrate processing apparatus according to claim 14, wherein: The plurality of second flow channels supply the gas at an inclination angle greater than 0 degrees and less than or equal to 90 degrees relative to the bottom surface of the substrate.

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