Substrate processing device and method

By using ozone water and ultraviolet light sources in the substrate treatment device, the problems of concentration dilution and wastewater increase caused by sulfuric acid solutions in the prior art are solved, and the effect of efficiently removing photoresist and organic matter is achieved.

CN114695177BActive Publication Date: 2025-02-07SYSTEM ENGINEERING MEGA SOLUTION CO LTD
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Patent Information

Application Number
CN202111253782.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-12-29
Filing Date
2021-10-27
Publication Date
2025-02-07
Estimated Expiration
2041-10-27

AI Technical Summary

Technical Problem

The prior art uses sulfuric acid-based solutions in the peeling process, resulting in dilution of solution concentration and increased wastewater volume, thereby increasing wastewater treatment costs.

Method used

Using a substrate treatment device and method without sulfuric acid, the substrate is placed by a support module and supplied with ozone water and ultraviolet light sources, thereby promoting photolysis of the photoresist pattern and the formation of ozone water free radicals.

Benefits of technology

Effectively remove photoresist and organic matter, reduce the amount of wastewater and treatment costs, while improving treatment efficiency and uniformity.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention provides a substrate processing device and method for effectively removing organic matter such as photoresist without using sulfuric acid. The substrate processing device comprises: a support module, a substrate is turned over and placed on the support module, and an ultraviolet light source is arranged on the support module, wherein one side of the substrate is arranged to face the support module, and the ultraviolet light source irradiates ultraviolet light to one side of the substrate; and a fluid supply module, comprising a nozzle arranged on the support module, and supplying fluid to one side of the substrate through the nozzle.
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Description

Technical Field

[0001] The invention relates to a substrate processing device and method. Background Art

[0002] When manufacturing a semiconductor device or a display device, a photoresist pattern is used for etching. That is, a photoresist pattern is formed on an etched film through photolithography and development processes, and the etched film is etched using the photoresist pattern. Next, the photoresist pattern that is no longer needed is removed through a stripping process. Summary of the invention

[0003] However, in the stripping process, sulfuric acid-based SPM solutions (H 2 SO 4 and H 2 O 2 mixture) or DSP(H 2 SO 4 , HF and H 2 O 2 However, taking the SPM solution as an example, due to H 2 SO 4 With H 2 O 2 The intermediate product H 2 SO 5 The SPM solution is highly reactive and produces water, which dilutes the concentration of the SPM solution. Therefore, the SPM solution needs to be continuously supplied, and as the amount of SPM solution used increases, the amount of wastewater increases, and the wastewater treatment costs increase accordingly.

[0004] The technical problem to be solved by the present invention is to provide a substrate processing device and method for effectively removing organic matter such as photoresist without using sulfuric acid.

[0005] The technical problems of the present invention are not limited to the above technical problems, and those skilled in the art can clearly understand other technical problems not mentioned through the following description.

[0006] One aspect of the substrate processing device of the present invention for solving the above-mentioned technical problems includes: a support module, on which the substrate is turned over and placed, and an ultraviolet light source is arranged on the support module, wherein one side of the substrate is arranged to face the support module, and the ultraviolet light source irradiates ultraviolet light to one side of the substrate; and a fluid supply module, including a nozzle arranged on the support module, and supplying fluid to one side of the substrate through the nozzle.

[0007] Another aspect of the substrate processing device of the present invention for solving the above-mentioned technical problems includes: a chamber; a flip module, which is arranged in the chamber and is used to flip the substrate; a support module, which is arranged in the chamber and is used to place the substrate flipped by the flip module, and is provided with an ultraviolet light source, wherein one side of the flipped substrate faces the support module, and the ultraviolet light source irradiates ultraviolet light to one side of the flipped substrate; a fluid supply module, including a nozzle arranged in the support module, and supplying fluid to one side of the flipped substrate through the nozzle; and a heating module, which is arranged upwardly spaced relative to the support module and includes an infrared light source for irradiating infrared light to the back side of the flipped substrate.

[0008] One aspect of the substrate processing method of the present invention for solving the above-mentioned technical problem includes the following steps: turning over and placing a substrate on a support module, and arranging the substrate so that one side of the substrate faces the support module; and irradiating ultraviolet rays to one side of the substrate while supplying fluid to one side of the substrate to process the substrate.

[0009] Details of other embodiments are included in the detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 FIG. 1 is a conceptual diagram for explaining a substrate processing apparatus according to a first embodiment of the present invention.

[0011] Figure 2 It is used to illustrate Figure 1 A view of an example of a nozzle.

[0012] Figure 3 FIG. 1 is a conceptual diagram for explaining a substrate processing apparatus according to a second embodiment of the present invention.

[0013] Figure 4 FIG. 1 is a conceptual diagram for explaining a substrate processing apparatus according to a third embodiment of the present invention.

[0014] Figure 5 FIG. 4 is a conceptual diagram for explaining a substrate processing apparatus according to a fourth embodiment of the present invention.

[0015] Figure 6 FIG. 5 is a conceptual diagram for explaining a substrate processing apparatus according to a fifth embodiment of the present invention.

[0016] Figure 7 It is used to illustrate Figure 6 A perspective view of the flip module.

[0017] Figure 8 is a flow chart for illustrating a substrate processing method according to an embodiment of the present invention.

[0018] Fig. 9 is a flow chart for illustrating a substrate processing method according to another embodiment of the present invention.

[0019] Description of Reference Numerals

[0020] 10: Support module 15, 15a, 15b: Ultraviolet light source

[0021] 30: Fluid supply module 40: Heating module

[0022] 45, 45a, 45b: infrared light source 100: flip module

[0023] 320: nozzle 310a: first storage unit

[0024] 310b: Second storage unit DETAILED DESCRIPTION

[0025] Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention and methods for achieving these advantages and features will be described in detail with reference to the following and the accompanying drawings. Figure 1 The present invention will become clear from the detailed description of the embodiments. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in a variety of different forms. This embodiment is only provided to make the disclosure of the present invention complete and to fully inform the scope of the invention to those skilled in the art of the present invention. The present invention is limited only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0026] When an element or layer is referred to as being “on” or “over” another element or layer, it includes not only being directly over the other element or layer, but also including other layers or other elements interposed therebetween. Conversely, when an element is referred to as being “directly on” or “over” another element, it means that there are no other elements or layers interposed therebetween.

[0027] In order to easily describe the relationship between one element or constituent element and another element or constituent element as shown in the figure, the spatial relative terms "below", "beneath", "lower", "above", "upper", etc. can be used. It should be understood that, in addition to the directions shown in the figures, spatial relative terms are terms that also include different directions of elements when they are used or operated. For example, when the elements shown in the figures are turned over, an element described as "below" or "beneath" of another element can be located "above" of another element. Therefore, the exemplary term "below" can include both below and above directions. The elements can also be oriented in another direction, so that the spatial relative terms can be interpreted according to the orientation.

[0028] Although the terms "first", "second", etc. are used to describe various elements, constituent elements and / or parts, these elements, constituent elements and / or parts are obviously not limited by these terms. These terms are only used to distinguish one element, constituent element and / or part from another element, constituent element and / or part. Therefore, the first element, first constituent element or first part mentioned below can obviously also be the second element, second constituent element or second part within the technical concept of the present invention.

[0029] The terms used in this specification are intended to illustrate the embodiments and are not intended to limit the present invention. In this specification, unless otherwise specifically mentioned in a sentence, singular forms also include plural forms. The terms "comprises" and / or "comprising" used in the specification do not exclude the existence or addition of one or more other constituent elements, steps, operations and / or elements in addition to the constituent elements, steps, operations and / or elements mentioned.

[0030] If there is no other definition, all terms (including technical and scientific terms) used in this specification can be used with the meaning commonly understood by ordinary technicians in the field to which the present invention belongs. In addition, the terms defined in commonly used dictionaries are not ideally or excessively interpreted unless clearly defined.

[0031] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals regardless of the drawing numbers, and repeated description thereof will be omitted.

[0032] Figure 1 FIG. 1 is a conceptual diagram for explaining a substrate processing apparatus according to a first embodiment of the present invention. Figure 2 It is used to illustrate Figure 1 A view of an example of a nozzle.

[0033] Reference Figure 1 , a substrate processing apparatus 1 according to the first embodiment of the present invention includes a supporting module 10 and a fluid supply module 30 .

[0034] The support module 10 has pins 12 on its surface for supporting the substrate W. For example, the pins 12 may be clamp pins for supporting the side surface of the substrate W, or may be support pins for supporting one surface (ie, the upper surface) of the substrate W.

[0035] The substrate W is turned over and placed on the support module 10. That is, one side (i.e., the surface or upper surface) US of the turned substrate W faces the support module 10. As shown in the figure, a material layer PT is formed on one side US of the substrate W. The material layer PT may be a photoresist pattern, but is not limited thereto. The material layer PT may also be an inorganic layer (e.g., SiO 2 , SiN, SiON). The substrate processing apparatus 1 according to the first embodiment of the present invention can remove the photoresist pattern (ie, a stripping process), or can remove organic residues remaining on the inorganic layer / substrate.

[0036] In addition, an ultraviolet light source 15 is provided in the support module 10. The ultraviolet light source 15 irradiates ultraviolet light UV to one side US of the flipped substrate W. The ultraviolet light UV can photodecompose the photoresist pattern. In addition, the ultraviolet light UV can promote the ozone water (O 3 DIW) free radical generation.

[0037] The fluid supply module 30 supplies fluid (for example, ozone water (O 3 Here, ozone water means water containing ozone (O 3 ) and a mixed fluid of pure water / deionized water DIW, and ozone can be used in a state of being mixed (or dissolved) in deionized water. Nitrogen and / or carbon dioxide can be added to the fluid as a catalytic gas as needed. Nitrogen and carbon dioxide are used to maintain the ozone concentration of the ozone-treated fluid at a high concentration. Nitrogen plays a role in converting O 2 decomposition into O, and carbon dioxide inhibits O 3 Decompose into O 2 .

[0038] The fluid supply module 30 may include a nozzle 320 provided at the support module 10, a first storage unit 310a supplying pure water DIW to the nozzle 320, and a first storage unit 310a supplying ozone (O2) to the nozzle 320. 3 )'s second storage unit 310b.

[0039] Here is the reference Figure 2, ozone water (O 3 The nozzle 320 for spraying pure water DIW onto one side (surface) US of the substrate W may include a mixing space 325 and a spray port 329 formed in a body 321. Pure water DIW is supplied from the first storage part 310a to the mixing space 325 through an inflow channel 322. In addition, ozone (O 3 ) is supplied from the second storage part 310b to the mixing space 325 through the ozone inflow channel 324. Pure water DIW and ozone (O 3 ) are contacted in the mixing space 325, and ozone is dissolved in the pure water. The high-concentration ozone water generated in the mixing space 325 is ejected to one side (surface) US of the substrate W through the ejection port 329. As described above, by producing ozone water in the nozzle 320 and ejecting it to the substrate W, ozone can react on the substrate W before being decomposed. The method of generating ozone water is not limited to using Figure 2 As long as it is a method that can make ozone react on the surface US of the substrate W, any method can be used.

[0040] In summary, the flipped substrate W is placed on the support module 10, and ozone water (O2) is supplied by the nozzle 320 provided in the support module 10. 3 The ultraviolet light source 15 provided in the support module 10 supplies the ultraviolet light UV. Since the ozone water (ODIW) is supplied to the limited space (i.e., between the substrate W and the support module 10), the ultraviolet light source 15 provided in the support module 10 supplies the ultraviolet light UV. 3 DIW), so the amount of ozone water used can be minimized.

[0041] Moreover, in the chamber (see Figure 6 ), and the more the ozone water contacts the downflow, the lower the concentration of the ozone water. However, in the substrate processing apparatus 1 according to some embodiments of the present invention, since the ozone water is sprayed between the substrate W and the support module 10, the contact amount of the ozone water with the downflow is minimized. Therefore, the concentration of the ozone water can be prevented from decreasing.

[0042] Furthermore, since ultraviolet rays are irradiated in a limited space (i.e., between the substrate W and the support module 10), the ozone water (O 3 In addition, the photolysis efficiency of the photoresist pattern can also be improved.

[0043] Figure 3 1 is a conceptual diagram for explaining a substrate processing apparatus according to a second embodiment of the present invention. Figure 1 and Figure 2 The explanation will be mainly focused on the points where the contents are different.

[0044] Reference Figure 3 In the substrate processing device 2 according to the second embodiment of the present invention, the ultraviolet light sources 15a, 15b include a first ultraviolet light source 15a arranged in the central area I of the support module 10 and a second ultraviolet light source 15b arranged in the edge area II of the support module 10.

[0045] Here, the first ultraviolet light source 15a may irradiate ultraviolet light toward the substrate W in a first direction (eg, a vertical direction), and the second ultraviolet light source 15b may irradiate ultraviolet light in a second direction (eg, an oblique direction) different from the first direction. Figure 3 As shown, the first ultraviolet light source 15a may be disposed on a first plane L1 parallel to the surface of the support module 10, and the second ultraviolet light source 15b may be disposed on a second plane L2 intersecting the first plane L1 at an acute angle.

[0046] When the ultraviolet light source disposed in the support module 10 irradiates ultraviolet light only in the vertical direction, the ultraviolet light may not be well irradiated to the edge region of the substrate W. Therefore, the second ultraviolet light source 15b is arranged so that the second ultraviolet light source 15b disposed in the edge region II of the support module 10 can irradiate ultraviolet light to the edge region of the substrate W. Thus, the processing uniformity of the entire substrate W can be improved.

[0047] Figure 4 1 is a conceptual diagram for explaining a substrate processing apparatus according to a third embodiment of the present invention. Figures 1 to 3 The explanation will be mainly focused on the points where the contents are different.

[0048] Reference Figure 4 The substrate processing apparatus 3 according to the third embodiment of the present invention may further include a heating module 40 .

[0049] The heating module 40 may be arranged upwardly spaced from the support module 10 and may control the temperature of the substrate W mounted on the support module 10. For example, the heating module 40 may irradiate infrared rays IR to the back surface BS of the substrate W, thereby increasing the temperature of the substrate W.

[0050] For example, when the temperature of the substrate W is increased by supplying high-temperature pure water (Hot DIW) to the back surface BS of the substrate W, the substrate W is heated below the boiling point. That is, the temperature of the heated substrate W is limited to below the boiling point. On the contrary, when the substrate W is heated using the infrared light source 45, the substrate W can be sufficiently heated without being subject to the aforementioned temperature limitation. Therefore, the reactivity of the substrate W with the ozone water can be sufficiently increased.

[0051] The heating module 40 may include a main body 41, an infrared light source 45 disposed in the main body 41, and a driving unit 410 that moves the main body 41 in the up and down directions. The main body 41 may have a disk shape similar to the substrate W, but is not limited thereto. In order to control the heating temperature of the substrate W, the power supplied to the infrared light source 45 may be adjusted, and the distance between the substrate W and the main body 41 may also be adjusted.

[0052] In addition, the main body 41 may also be in the form of a bar. In this case, in order to heat the substrate W as a whole, the main body 41 may also be swung above the substrate W during the process.

[0053] Figure 5 1 is a conceptual diagram for explaining a substrate processing apparatus according to a fourth embodiment of the present invention. Figures 1 to 4 The explanation will be mainly focused on the points where the contents are different.

[0054] Reference Figure 5 In the substrate processing apparatus 4 according to the fourth embodiment of the present invention, the main body 41 includes a first region III and a second region IV surrounding the first region III. Alternatively, the first region III may correspond to the central region of the substrate W, and the second region IV may correspond to the edge region of the substrate W. The first infrared light source 45a is formed in the first region III, and the second infrared light source 45b is formed in the second region IV.

[0055] Here, the power of the first infrared light source 45a and the power of the second infrared light source 45b may be controlled differently. The power of the second infrared light source 45b may be greater than the power of the first infrared light source 45a.

[0056] The substrate processing efficiency may be lower in the edge region of the substrate W than in the center region of the substrate W. Therefore, the temperature of the edge region of the substrate W may be made higher than that of the center region of the substrate W, thereby improving the processing uniformity of the entire substrate W. To this end, the power of the second infrared light source 45b corresponding to the edge region of the substrate W may be controlled to be greater than the power of the first infrared light source 45a corresponding to the center region of the substrate W.

[0057] Figure 6 FIG. 5 is a conceptual diagram for explaining a substrate processing apparatus according to a fifth embodiment of the present invention. Figure 7 It is used to illustrate Figure 6 For ease of explanation, the flip module is shown in the figure below. Figures 1 to 3 The explanation will be mainly focused on the points where the contents are different.

[0058] Reference Figure 6 and Figure 7, the substrate processing apparatus 5 according to the fifth embodiment of the present invention includes a chamber 99, a housing 200, a support module 340, a lifting module 360, a flip module 100, a fluid supply module (not shown), and the like.

[0059] The housing 200 provides a processing space for performing a process, and the central part of its upper part is open. The housing 200 includes a plurality of bowls 220, 240, and 260. For example, the housing 200 has an inner bowl (or, a third bowl or a third-level bowl) 220, an intermediate bowl (or, a second bowl or a second-level bowl) 240, and an outer bowl (or, a first bowl or a first-level bowl) 260. The inner bowl 220, the intermediate bowl 240, and the outer bowl 260 can separate and recycle different liquids from each other in the liquid used for the process. The inner bowl 220 is set to a hollow cylindrical shape around the support module 340, the intermediate bowl 240 is set to a hollow cylindrical shape around the inner bowl 220, and the outer bowl 260 is set to a hollow cylindrical shape around the intermediate bowl 240. That is, the middle bowl 240 may be arranged inside the outer bowl 260, and the inner bowl 220 may be arranged inside the middle bowl 240. The inner space of the inner bowl 220, the space between the inner bowl 220 and the middle bowl 240, and the space between the middle bowl 240 and the outer bowl 260 respectively function as inflow ports for the medical solution to flow into the inner bowl 220, the middle bowl 240, and the outer bowl 260. Recovery lines 225, 245, 265 extending vertically in the lower side direction of the bottom surface thereof are respectively connected to the inner bowl 220, the middle bowl 240, and the outer bowl 260. Each recovery line 225, 245, 265 discharges the medical solution flowing in through the inner bowl 220, the middle bowl 240, and the outer bowl 260. The discharged chemical liquid can be reused by an external chemical liquid regeneration system (not shown).

[0060] Next, the shapes of the inner bowl 220 , the middle bowl 240 , and the outer bowl 260 will be described in more detail.

[0061] The inner bowl 220 includes an outer wall 222, a bottom wall 224, an inner wall 226, and a guide wall 228. The outer wall 222, the bottom wall 224, the inner wall 226, and the guide wall 228 have an annular shape, respectively. The outer wall 222 has an inclined wall 222a that is inclined downward in a direction away from the support module 340 and a vertical wall 222b that extends vertically downward from the lower end of the inclined wall 222a. The bottom wall 224 extends horizontally from the lower end of the vertical wall 222b in a direction toward the support module 340. The end of the bottom wall 224 extends to the same position as the upper end of the inclined wall 222a. The inner wall 226 extends vertically upward from the inner end of the bottom wall 224. The inner wall 226 extends to a position where its upper end is separated from the upper end of the inclined wall 222a by a certain distance. The space separated in the up-down direction between the inner wall 226 and the inclined wall 222 a functions as the inlet 227 of the inner bowl 220 .

[0062] A plurality of openings 223 are formed on the inner wall 226 to form an annular arrangement. Each opening 223 is provided in a slit shape. The opening 223 functions as an exhaust port through which the gas flowing into the inner bowl 220 is discharged to the outside through the lower space in the support module 340.

[0063] The guide wall 228 has an inclined wall 228a that is inclined downward from the upper end of the inner wall 226 in a direction away from the support module 340, and a vertical wall 228b that vertically extends downward from the lower end of the inclined wall 228a in the up-down direction. The lower end of the vertical wall 228b is spaced a certain distance from the bottom wall 224. The guide wall 228 guides the liquid medicine flowing in through the inlet 227 to flow smoothly to the space 229 surrounded by the outer wall 222, the bottom wall 224, and the inner wall 226.

[0064] The middle bowl 240 has an outer wall 242, a bottom wall 244, an inner wall 246, and a protruding wall 248. The outer wall 242, the bottom wall 244, and the inner wall 246 of the middle bowl 240 have shapes substantially similar to those of the outer wall 222, the bottom wall 224, and the inner wall 226 of the inner bowl 220, but have a size larger than that of the inner bowl 220 so as to surround the inner bowl 220. The upper end of the inclined wall 242a of the outer wall 242 of the middle bowl 240 and the upper end of the inclined wall 222a of the outer wall 222 of the inner bowl 220 are spaced apart in the up-down direction by a certain distance, and the spaced apart space functions as an inlet 247 of the middle bowl 240. The protruding wall 248 extends vertically downward from the end of the bottom wall 244. The upper end of the inner wall 246 of the middle bowl 240 contacts the end of the bottom wall 224 of the inner bowl 220. Slit-shaped exhaust ports 243 for exhausting gas are provided on an inner wall 246 of the middle bowl 240 in an array forming a ring.

[0065] The outer bowl-shaped member 260 has an outer wall 262, a bottom wall 264, and a protruding wall 270. The outer wall 262 of the outer bowl-shaped member 260 has a shape similar to the outer wall 242 of the middle bowl-shaped member 240, but has a size larger than the middle bowl-shaped member 240 to surround the middle bowl-shaped member 240. The inclined wall 262a of the outer bowl-shaped member 260 extends obliquely upward along the inner side direction from the upper end of the vertical wall 262b. The inclined wall 262a is set as the upper wall of the centrally opened housing 200. A discharge hole 263a is formed on the inclined wall 262a of the outer bowl-shaped member 260. The discharge hole 263a is adjacent to the vertical wall. The discharge hole 263a is set as a plurality. Each discharge hole 263a can be formed along the circumferential direction of the inclined wall 262a. A plurality of discharge holes 263a can be set to be combined with each other to have an annular shape. The protruding wall 270 is set to protrude upward from the upper end of the vertical wall 262b. The protruding wall 270 is provided in an annular shape having the same diameter as the vertical wall 262b. The protruding wall 270 and the inclined wall 262a are combined with each other to form a liquid storage space 270a. The liquid storage space 270a is provided to communicate with the internal space of the outer bowl-shaped member 220 through the discharge hole 263a. The upper end of the inclined wall 262a of the outer bowl-shaped member 260 is separated from the upper end of the inclined wall 242b of the middle bowl-shaped member 240 by a certain distance in the up-down direction, and the separated space serves as the inlet 267 of the outer bowl-shaped member 260. The bottom wall 264 has a substantially disc shape, and an opening is formed at the center thereof for inserting the support shaft (rotation shaft) 348. The outer bowl-shaped member 260 serves as the outer wall of the entire housing 200.

[0066] The support module 340 supports the substrate W in the processing space of the housing 200 and rotates the substrate W. The support module 340 includes an ultraviolet light source 15, a body 342, a support pin 344, a clamping pin 346, and a support shaft (or rotation shaft) 348. The body 342 has an upper surface that is generally arranged in a circular shape when viewed from above. A support shaft 348 that is rotatable by a motor 349 is fixedly coupled to the bottom surface of the body 342.

[0067] A plurality of support pins 344 are provided. The support pins 344 are arranged at predetermined intervals on the edge of the upper surface of the body 342 and protrude upward from the body 342. The support pins 344 are arranged to have an annular shape as a whole by combination with each other. The support pins 344 support the back edge of the substrate W so that the substrate W is separated from the upper surface of the body 342 by a certain distance.

[0068] The clamping pin 346 is provided in a plurality. The clamping pin 346 is arranged to be farther from the center of the body 342 than the supporting pin 344. The clamping pin 346 is provided to protrude upward from the body 342. The clamping pin 346 supports the side of the substrate W so that the substrate W does not disengage from the positive position to the side when the supporting module 340 rotates. The clamping pin 346 is provided to be movable linearly between the waiting position and the supporting position along the radial direction of the body 342. The waiting position is a position farther from the center of the body 342 than the supporting position. When the substrate W is loaded into the supporting module 340 or unloaded from the supporting module 340, the clamping pin 346 is located at the waiting position, and when a process is performed on the substrate W, the clamping pin 346 is located at the supporting position. The clamping pin 346 contacts the side of the substrate W at the supporting position.

[0069] The support module 340 is provided with an ultraviolet light source 15. The ultraviolet light source 15 irradiates ultraviolet light to one side of the flipped substrate W. The ultraviolet light can photodecompose the photoresist pattern. In addition, the ultraviolet light can promote the ozone water (O 3 DIW) free radical generation.

[0070] The lifting module 360 ​​can linearly move the housing 200 in the up-and-down direction. As the housing 200 moves up and down, the relative height of the housing 200 relative to the supporting module 340 changes.

[0071] This lifting module 360 ​​has a bracket 362, a moving shaft 364, and a driver 366. The bracket 362 is fixedly provided on the outer wall 262 of the housing 200, and the moving shaft 364 that is moved in the up-down direction by the driver 366 is fixedly coupled to the bracket 362. When the substrate W is placed on the support module 340 or the substrate W is lifted from the support module 340, the housing 200 is lowered so that the support module 340 protrudes upward from the housing 200. In addition, when the process is performed, the height of the housing 200 is adjusted so that the chemical liquid flows into the set bowl-shaped member 220, 240, 260 according to the type of chemical liquid supplied to the substrate W. Contrary to the above, the lifting module 360 ​​can move the support module 340 in the up-down direction.

[0072] like Figure 7 As shown, the flip module 100 includes: a processor 110 for flipping the substrate W, sensors 120, 122 for sensing the placement state of the substrate W placed on the processor 110 by emitting and receiving at least one optical signal in a direction horizontal to the substrate W, a driving unit 104 for rotating or moving the processor 110 up and down, and a control unit (not shown) for determining the normal or abnormal placement state of the substrate W by the optical signals sensed by the sensors 120, 122.

[0073] As shown in the figure, the processor 110 includes: a buffer 108 for placing a substrate W, a clamping arm 112 having clamping blocks 114 and 116 at multiple positions for clamping the substrate W placed in the buffer 108, and a head 106 coupled to one side of the buffer 108 and the clamping arm 112 and driving the clamping arm 112 to clamp the substrate W placed in the buffer 108.

[0074] For example, the driving part 104 includes guides, rails, motors, cylinders, cams, gears, belts, and pulleys, and rotates and moves the head 106 so that the processor 110 rotates or slides up and down. The driving part 104 rotates the head 106 to flip the processor 110, and moves the processor 110 to load or unload the substrate W to or from the substrate support. In addition, the driving part 104 includes a support frame 102, which is provided on a lower base frame (not shown) to fix the flip module 100 inside the chamber.

[0075] The sensors 120 and 122 have a light emitting portion 120 that generates at least one optical signal, and a light receiving portion 122 that receives each optical signal corresponding to the light emitting portion 120, and the light emitting portion 120 and the light receiving portion 122 are arranged on the clamping arm 112 opposite to each other. Therefore, the sensors 120 and 122 transmit and receive optical signals horizontally with the substrate W placed on the buffer 108. To this end, the light emitting portion 120 has at least one light emitting element (not shown) that generates at least one optical signal, and the light receiving portion 122 has at least one light receiving element (not shown) that receives at least one optical signal. For example, the light emitting portion 120 maintains a certain interval (for example, approximately less than 1 mm) with the lower surface of the substrate W placed on the buffer 108 (that is, the front surface of the wafer) and generates one optical signal horizontally. As another example, the light emitting portion 120 maintains a certain interval (for example, approximately less than 1 mm) with the upper surface and the lower surface of the substrate W placed on the buffer 108 and generates multiple optical signals horizontally. Therefore, the sensors 120 and 122 can accurately sense whether the substrate W placed on the buffer 108 is in a normal state or an abnormal state by emitting and receiving optical signals at the side of the substrate W.

[0076] Refer again Figure 6 As described above, the fluid supply module (not shown) may include a nozzle disposed on the body 342 of the support module 10, a first storage unit for supplying pure water DIW to the nozzle, and ozone (O 3 ) of the second storage unit. In the mixing space in the nozzle, ozone water in which ozone is dissolved in pure water is sprayed onto one side (surface) of the turned substrate W.

[0077] In addition, the chamber 99 provides a closed internal space. An airflow supply module 810 is provided at the upper part. The airflow supply module 810 forms a downflow inside the chamber 99. The airflow supply module 810 filters and supplies high-humidity external air to the inside of the chamber. The high-humidity external air is supplied to the inside of the chamber through the airflow supply module 810, and a downflow is formed. The downflow provides a uniform airflow to the upper part of the substrate W, and the contaminants generated in the process of processing the surface of the substrate W by the processing fluid are discharged together with the air to the process exhaust part through the bowl-shaped parts 220, 240, 260 of the housing 200.

[0078] As mentioned above, ozone water (O 3 The more the ozone water (DIW) contacts the downflow, the lower the concentration of the ozone water. However, in the substrate processing apparatus 5 according to some embodiments of the present invention, since the ozone water is sprayed between the substrate W and the support module 340, the contact amount of the ozone water with the downflow is minimized. Therefore, the concentration of the ozone water can be prevented from decreasing.

[0079] The flipped substrate W is placed on the support module 10, and ozone water (O2) is supplied by the nozzle 320 provided on the support module 340. 3 The ultraviolet light source 15 provided in the support module 340 is used to supply the ultraviolet light. Since the ozone water (ODIW) is supplied to the limited space (i.e., between the substrate W and the support module 340), the ultraviolet light source 15 is used to supply the ultraviolet light. 3 DIW), so the amount of ozone water used can be minimized.

[0080] Figure 8 is a flow chart for illustrating a substrate processing method according to an embodiment of the present invention. Figure 4 A driving method of a substrate processing apparatus is described below.

[0081] Reference Figure 4 and Figure 8 The transfer module (not shown) transfers the substrate W to the flip module (refer to Figure 6 The flip module flips the substrate W so that one side (ie, the surface) of the substrate W faces the support module 10, and loads the flipped substrate W onto the support module 10 (S910).

[0082] Next, the turned substrate W is pre-rinsed ( S920 ), for example, using deionized water DIW.

[0083] Next, the material layer (ie, photoresist pattern) PT formed on the flipped substrate W is peeled off (S930). Specifically, the substrate W is heated by the infrared light source 45, and the fluid supply module 30 supplies ozone water (O 3DIW), using an ultraviolet light source 15 to photolyze the material layer PT and promote the generation of free radicals in ozone water.

[0084] Next, the substrate W after the stripping process is rinsed (post-rinse) and dried (S940). For example, deionized water DIW may be used for cleaning, and N 2 The gas dries the substrate W.

[0085] Next, the reversing module 100 reverses the reversed substrate W again so that one side (surface) of the substrate W faces upward (ie, the back side of the substrate W faces the supporting module 10 ), and the conveying module unloads the substrate W from the reversing module 100 .

[0086] Fig. 9 is a flow chart for illustrating a substrate processing method according to another embodiment of the present invention. Figure 4 For the convenience of explanation, the driving method of the substrate processing device using Figure 8 The explanation will be mainly focused on the points where the contents are different.

[0087] Reference Figure 4 and Fig. 9 , the substrate W is turned over so that one side (ie, the surface) thereof faces the support module 10, and the turned over substrate W is loaded on the support module 10 (S910).

[0088] Next, the inverted substrate W is pre-rinsed, and the infrared light source 45 starts irradiating infrared rays IR, and the ultraviolet light source 15 starts irradiating ultraviolet rays UV ( S921 ).

[0089] Next, the fluid supply module 30 supplies ozone water (O 3 DIW) to peel off the material layer (ie, photoresist pattern) PT formed on the flipped substrate W (S931).

[0090] Next, the substrate W after the lift-off process is post-rinsed and dried ( S940 ).

[0091] Next, the substrate W is turned over again so that one side (surface) of the substrate W faces upward, and the transfer module unloads the substrate W.

[0092] The embodiments of the present invention are described above with reference to the accompanying drawings, but those skilled in the art should understand that the present invention can be implemented in other specific forms without changing its technical ideas or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive.

Claims

1. A substrate processing device, comprising: Chamber; A support module is arranged in the chamber, the substrate is turned over and placed on the support module, and an ultraviolet light source is arranged on the support module, wherein a side of the substrate formed with the material layer is arranged to face the support module, and the ultraviolet light source irradiates ultraviolet light to one side of the substrate; a fluid supply module, comprising a nozzle disposed on the support module, the nozzle facing one side of the substrate, and supplying ozone water to one side of the substrate through the nozzle; and The airflow supply module forms a downward airflow inside the chamber. The ultraviolet light source irradiates ultraviolet light to one side of the substrate, and the fluid supply module supplies ozone water to one side of the substrate to treat the substrate and remove organic matter. During processing of the substrate, a downflow is formed in a chamber in which the substrate is processed.

2. The substrate processing apparatus according to claim 1, further comprising: The heating module is arranged upwardly and spaced apart from the supporting module, and controls the temperature of the substrate placed on the supporting module.

3. The substrate processing apparatus according to claim 2, wherein: The heating module includes an infrared light source for irradiating infrared rays toward a rear surface of the substrate.

4. The substrate processing apparatus according to claim 3, wherein: The heating module includes: a main body including a first area and a second area surrounding the first area, a first infrared light source formed in the first area, and a second infrared light source formed in the second area. The power of the first infrared light source and the power of the second infrared light source are controlled differently.

5. The substrate processing apparatus according to claim 4, wherein: The power of the second infrared light source is greater than the power of the first infrared light source.

6. The substrate processing apparatus according to claim 1, wherein: The ultraviolet light source comprises a first ultraviolet light source arranged in the central area of ​​the support module and a second ultraviolet light source arranged in the edge area of ​​the support module. The first ultraviolet light source irradiates ultraviolet light toward the substrate in a first direction, and the second ultraviolet light source irradiates ultraviolet light in a second direction different from the first direction.

7. The substrate processing apparatus according to claim 1, further comprising: The flip module is used for flipping the substrate.

8. The substrate processing apparatus according to claim 7, wherein: The flip module flips the substrate provided from the outside of the chamber so that one side of the substrate faces the support module, then provides the substrate to the support module, and flips the substrate treated by the ozone water and the ultraviolet rays again so that the back side of the substrate faces the support module.

9. The substrate processing apparatus according to claim 1, wherein: A photoresist pattern is formed on one surface of the substrate.

10. A substrate processing device, comprising: Chamber; A flip module, disposed in the chamber and used for flipping the substrate; A support module is arranged in the chamber and is used to place the substrate flipped by the flip module, and is provided with an ultraviolet light source, wherein one side of the flipped substrate faces the support module, and the ultraviolet light source irradiates ultraviolet light to one side of the flipped substrate; a fluid supply module, comprising a nozzle disposed on the support module, and supplying ozone water to one side of the flipped substrate through the nozzle; a heating module arranged upwardly and spaced apart from the supporting module and including an infrared light source for irradiating infrared rays toward the back side of the turned-over substrate; and The airflow supply module forms a downward airflow inside the chamber.

11. The substrate processing apparatus according to claim 10, wherein: The heating module includes: a main body including a first area and a second area surrounding the first area, a first infrared light source formed in the first area, and a second infrared light source formed in the second area. The power of the second infrared light source is controlled to be greater than the power of the first infrared light source.

12. The substrate processing apparatus according to claim 10, wherein: The ultraviolet light source comprises a first ultraviolet light source arranged in the central area of ​​the support module and a second ultraviolet light source arranged in the edge area of ​​the support module. The first ultraviolet light source irradiates ultraviolet light toward the substrate in a first direction, and the second ultraviolet light source irradiates ultraviolet light in a second direction different from the first direction.

13. The substrate processing apparatus according to claim 10, wherein: A photoresist pattern is formed on one surface of the substrate.

14. A substrate processing method, comprising the following steps: Turning over the substrate and placing it on the support module, and arranging the substrate so that one side of the substrate faces the support module; irradiating ultraviolet rays to one side of the substrate and simultaneously supplying ozone water to one side of the substrate to treat the substrate; as well as During processing of the substrate, a downflow is formed in a chamber in which the substrate is processed.

15. The substrate processing method according to claim 14, further comprising the following steps: During processing of the substrate, infrared rays are irradiated toward the back side of the substrate to heat the substrate.

16. The method according to claim 15, wherein: The substrate is divided into a central area and an edge area, and a light amount of infrared rays irradiated to the central area is different from a light amount of the infrared rays irradiated to the edge area.

17. The substrate processing method according to claim 14, wherein: A photoresist pattern is formed on one surface of the substrate.

Citation Information

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