Magnetic sensor and inspection device

Abstract

A magnetic sensor and an inspection device capable of improving sensitivity are provided. According to an embodiment, the magnetic sensor includes a first sensor portion. The first sensor portion includes: a first magnetic component; a first opposing magnetic component, which is along a first direction from the first magnetic component toward the first opposing magnetic component; and a first magnetic element, which includes one or more first extensions. The first extension includes a first magnetic layer, a first opposing magnetic layer, and a first non-magnetic layer. The first magnetic layer includes a first portion, a first opposing portion, and a first intermediate portion. The direction from the first portion toward the first opposing portion is along the first direction. The first intermediate portion is located between the first portion and the first opposing portion. The first non-magnetic layer is located between at least a portion of the first intermediate portion and the first opposing magnetic layer in a second direction intersecting the first direction.

Description

[0001] This application is based on Japanese Patent Application No. 2021-000054 (filing date January 4, 2021), and claims priority from that application. This application incorporates the entire contents of that application by reference. Technical Field

[0002] Embodiments of the present invention relate to a magnetic sensor and a testing device. Background Art

[0003] There is a magnetic sensor using a magnetic layer. There is a testing device using a magnetic sensor. In the magnetic sensor, it is desired to improve the sensitivity. Summary of the invention

[0004] Embodiments of the present invention provide a magnetic sensor and an inspection device capable of improving sensitivity.

[0005] Technical solutions to solve problems

[0006] According to an embodiment of the present invention, a magnetic sensor includes a first sensor portion. The first sensor portion includes: a first magnetic component; a first opposing magnetic component, which is along a first direction from the first magnetic component toward the first opposing magnetic component; and a first magnetic element, which includes one or more first extensions. The first extension includes a first magnetic layer, a first opposing magnetic layer, and a first non-magnetic layer. The first magnetic layer includes a first portion, a first opposing portion, and a first intermediate portion. The direction from the first portion toward the first opposing portion is along the first direction. The first intermediate portion is located between the first portion and the first opposing portion. The first non-magnetic layer is located between at least a portion of the first intermediate portion and the first opposing magnetic layer in a second direction intersecting the first direction.

[0007] According to the magnetic sensor having the above structure, it is possible to provide a magnetic sensor and an inspection device capable of improving sensitivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 (a)~ Figure 1 (c) is a schematic diagram illustrating the magnetic sensor according to the first embodiment.

[0009] Figure 2 This is a schematic cross-sectional view illustrating a part of the magnetic sensor according to the first embodiment.

[0010] Figure 3 (a)~ Figure 3 (c) is a schematic diagram illustrating the magnetic sensor according to the first embodiment.

[0011] Figure 4 This is a graph illustrating the characteristics of a magnetic sensor.

[0012] Figure 5 This is a graph illustrating the characteristics of a magnetic sensor.

[0013] Figure 6 (a)~ Figure 6 (c) is a schematic diagram illustrating the magnetic sensor according to the first embodiment.

[0014] Figure 7 (a) and Figure 7 (b) is a schematic diagram illustrating the magnetic sensor according to the first embodiment.

[0015] Figure 8 This is a schematic cross-sectional view illustrating the magnetic sensor according to the first embodiment.

[0016] Fig. 9 (a) and Fig. 9 (b) is a graph illustrating the characteristics of the magnetic sensor according to the first embodiment.

[0017] Fig.10 (a)~ Fig.10 (c) is a graph illustrating the characteristics of the magnetic sensor according to the first embodiment.

[0018] Fig.11 (a) and Fig.11 (b) is a schematic diagram illustrating the magnetic sensor according to the second embodiment.

[0019] Fig.12 (a) and Fig.12 (b) is a schematic cross-sectional view illustrating the magnetic sensor according to the second embodiment.

[0020] Fig.13 (a) and Fig.13 (b) is a schematic diagram illustrating the magnetic sensor according to the second embodiment.

[0021] Fig.14 (a) and Fig.14 (b) is a schematic cross-sectional view illustrating the magnetic sensor according to the second embodiment.

[0022] Fig.15 This is a schematic diagram illustrating a magnetic sensor according to a third embodiment.

[0023] Fig.16 This is a schematic diagram illustrating a magnetic sensor according to a third embodiment.

[0024] Fig.17 (a)~ Fig.17 (c) is a schematic diagram illustrating the magnetic sensor according to the third embodiment.

[0025] Fig.18 This is a schematic diagram illustrating an inspection device according to a fourth embodiment.

[0026] Fig.19 This is a schematic diagram illustrating an inspection device according to a fourth embodiment.

[0027] Fig. 20 It is a schematic perspective view showing an inspection device according to a fourth embodiment.

[0028] Fig.21 It is a schematic plan view showing an inspection device according to a fourth embodiment.

[0029] Fig. 22 It is a schematic diagram showing a magnetic sensor and an inspection device according to a fourth embodiment.

[0030] Fig.23 It is a schematic diagram showing an inspection device according to a fourth embodiment.

[0031] Description of symbols

[0032] 10A to 10D: 1st sensor unit to 4th sensor unit; 10S: sensor unit; 11 to 14: 1st magnetic layer to 4th magnetic layer; 11E to 14E: 1st magnetic element to 4th magnetic element; 11Ee to 14Ee: one end; 11Ef to 14Ef: the other end; 11L: 1st conductive layer; 11n to 14n: 1st non-magnetic layer to 4th non-magnetic layer; 11o to 14o: 1st opposing magnetic layer to 4th opposing magnetic layer; 11p: non-magnetic film; 11q: magnetic film; 11r: 1st layer; 11x to 14x: 1st extension part to 4th extension part; 21 to 24: 1st conductive component to 4th conductive component; 21e to 24e: one end; 21f to 24f: the other end; 51 to 54: 1st magnetic component to 4th magnetic component; 51A~54A 1st opposing magnetic component~4th opposing magnetic component; 51B another 1st opposing magnetic component; 65a~65d 1st insulating component~4th insulating component; 66a~66d, 66aA area; 70 control circuit unit; 71 1st current circuit; 73 detection circuit; 75 element current circuit; 75a, 75b 1st lock-in amplifier, 2nd lock-in amplifier; 75c sensor control circuit unit; 76A magnetic field application unit; 76B detection object drive unit; 76a application control circuit unit; 76b drive amplifier; 76c coil; 78 processing unit; 80 detection object; 80c inspection conductive component; 80i current; 110~115, 120, 150, 150a magnetic sensor; 301 sensor unit; 302 substrate; 303 input / output wire; 305 substrate; 500 diagnostic device; 502 control mechanism; 504 signal input / output unit; 506 sensor driver; 508 signal processing unit; 510 signal analysis unit; 512 data processing unit; 514 data unit; 516 imaging diagnostic unit; 550, 551 inspection device; 600 battery system; 610 battery; 680 inspection object; 710 inspection device; 770 processing unit; BP magnetic flux density; CN1 first connecting member, CP1 to CP6 first connecting point to sixth connecting point; H magnetic field; Hac alternating current magnetic field; Hex external magnetic field; Hex1 to H ex3 1st magnetic field to 3rd magnetic field; Hsig signal magnetic field; I1 1st current; Ia1~Ia3 1st value current to 3rd value current; Id element current; L11 1st magnetic layer length; L11n 1st non-magnetic layer length; Lp1 1st part length; LpA1 1st opposing part length; PL layer; R resistance; R1~R4 1st value to 4th value; Ro low resistance; Rx resistance; SigR1, SigR2 signal; SigX, SigX1, SigX2 output signal; d1 distance; g1 1st distance; p1~p4 1st part to 4th part; pA1~pA4 1st opposing part to 4th opposing part; pM1~pM4 1st middle part to 4th middle part DETAILED DESCRIPTION

[0033] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0034] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as the actual ones. Even when showing the same part, the mutual size and ratio may be shown differently depending on the drawings.

[0035] In the present specification and each drawing, the same reference numerals are given to the same elements as those described previously with reference to the drawings in which they appear, and detailed descriptions thereof are appropriately omitted.

[0036] (First embodiment)

[0037] Figure 1 (a)~ Figure 1 (c) is a schematic diagram illustrating the magnetic sensor according to the first embodiment. Figure 1 (a) is Figure 1 (b) A1-A2 line cross-sectional view. Figure 1 (b) is a top view. Figure 1 (c) is a cross-sectional view.

[0038] like Figure 1 (a) and Figure 1 As shown in (b) of FIG. 1 , the magnetic sensor 110 according to the embodiment includes a first sensor unit 10A. The first sensor unit 10A includes a first magnetic member 51 , a first opposing magnetic member 51A, and a first magnetic element 11E.

[0039] The direction from the first magnetic member 51 toward the first opposing magnetic member 51A is along the first direction. The first direction is referred to as the X-axis direction. A direction perpendicular to the X-axis direction is referred to as the Z-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is referred to as the Y-axis direction.

[0040] The first magnetic element 11E includes one or more first extension portions 11x. In this example, the number of the first extension portions 11x is 1. Figure 1 (a) and Figure 1 As shown in (c) of FIG. 1 , the first extension portion 11 x includes the first magnetic layer 11 , the first opposing magnetic layer 11 o , and the first non-magnetic layer 11 n .

[0041] like Figure 1 (a) and Figure 1 As shown in (b) of FIG. 8 , the first magnetic layer 11 includes a first portion p1 , a first opposing portion pA1 , and a first intermediate portion pM1 .

[0042] The direction from the first part p1 toward the first opposing part pA1 is along the first direction (X-axis direction). The first intermediate part pM1 is located between the first part p1 and the first opposing part pA1. The first non-magnetic layer 11n is located between at least a portion of the first intermediate part pM1 and the first opposing magnetic layer 11o in the second direction. The second direction intersects the first direction. The second direction is, for example, the Z-axis direction. The direction from the first part p1 toward the first magnetic component 51 is along the second direction. The direction from the first opposing part pA1 toward the first opposing magnetic component 51A is along the second direction.

[0043] like Figure 1 As shown in (a), the first sensor portion 10A may also include a first insulating component 65a. At least a portion of the first insulating component 65a is located between the first portion p1 and the first magnetic component 51 and between the first opposing portion pA1 and the first opposing magnetic component 51A. The first insulating component 65a may also be disposed around the first magnetic element 11E, the first magnetic component 51, and the first opposing magnetic component 51A. Figure 1 In (b), the first insulating component 65a is omitted.

[0044] like Figure 1 As shown in (a), for example, the position of the first non-magnetic layer 11n in the first direction (X-axis direction) is located between the position of the first magnetic component 51 in the first direction and the position of the first opposing magnetic component 51A in the first direction. The first non-magnetic layer 11n overlaps with a region 66a between the first magnetic component 51 and the first opposing magnetic component 51A in the second direction (Z-axis direction). The region 66a may also be, for example, a part of the first insulating component 65a.

[0045] In the first magnetic layer 11, the first intermediate portion pM1, the first nonmagnetic layer 11n, and the first opposing magnetic layer 11o serve as, for example, a detection portion. The resistance of the detection portion changes according to the magnetic field of the detection target. The detection portion is, for example, an MTJ (Magnetic Tunnel Junction) element.

[0046] In the embodiment, the magnetic field (external magnetic field of the detection object) is concentrated by the first magnetic component 51 and the first opposing magnetic component 51A. The concentrated magnetic field can be efficiently applied to the detection unit (for example, the MTJ element). The first magnetic component 51 and the first opposing magnetic component 51A function as an MFC (Magnetic Field Concentrator).

[0047] In the embodiment, the first portion p1 of the first magnetic layer 11 overlaps with the first magnetic component 51 in the Z-axis direction. The first opposing portion pA1 of the first magnetic layer 11 overlaps with the first opposing magnetic component 51A in the Z-axis direction. Thus, the concentrated magnetic field (external magnetic field) is efficiently applied to the first portion p1 and the first opposing portion pA1. The concentrated magnetic field is more effectively applied to the detection unit. Thus, high sensitivity can be obtained. According to the embodiment, for example, a magnetic sensor capable of improving sensitivity can be provided.

[0048] For example, the external magnetic field includes a component along the X-axis direction. The direction of the magnetization of the first magnetic layer 11 changes according to the external magnetic field. For example, when the external magnetic field is 0, the angle between the magnetization of the first magnetic layer 11 and the magnetization of the first opposing magnetic layer 11o is substantially 0. At this time, these magnetizations are, for example, along the Y-axis direction. The resistance of the detection unit at this time is low. On the other hand, when the external magnetic field is not 0, the angle between the magnetization of the first magnetic layer 11 and the magnetization of the first opposing magnetic layer 11o becomes larger. The resistance at this time is high.

[0049] like Figure 1 As shown in (a), a first conductive layer 11L may be provided. A first counter magnetic layer 11o is provided between the first intermediate portion pM1 and the first conductive layer 11L. The first conductive layer 11L is electrically connected to the first counter magnetic layer 11o.

[0050] like Figure 1 As shown in (b), in this example, the first extension portion 11x includes a second opposing magnetic layer 12o and a second non-magnetic layer 12n. In this example, the first non-magnetic layer 11n is located between a portion of the first intermediate portion pM1 and the first opposing magnetic layer 11o in the second direction (Z-axis direction). The second non-magnetic layer 12n is located between another portion of the first intermediate portion pM1 and the second opposing magnetic layer 12o in the second direction. The direction from the second non-magnetic layer 12n toward the first non-magnetic layer 11n is along the third direction. The third direction intersects with a plane (Z-X plane) including the first direction and the second direction. The third direction is, for example, the Y-axis direction. Another portion of the first intermediate portion pM1, the second non-magnetic layer 12n, and the second opposing magnetic layer 12o form a detection portion (for example, an MTJ element).

[0051] Another first conductive layer 11L electrically connected to the second counter magnetic layer 12 o may be further provided.

[0052] The resistance of the first magnetic element 11E corresponds to the resistance of the current path including the first opposing magnetic layer 11o, the first nonmagnetic layer 11n, the first magnetic layer 11, the second nonmagnetic layer 12n, and the second opposing magnetic layer 12o. The resistance of the first magnetic element 11E corresponds to the resistance between the first conductive layer 11L electrically connected to the first opposing magnetic layer 11o and another first conductive layer 11L electrically connected to the second opposing magnetic layer 12o.

[0053] like Figure 1 As shown in (c), one end 11Ee of the first magnetic element 11E corresponds to, for example, the other first conductive layer 11L described above. The other end 11Ef of the first magnetic element 11E corresponds to, for example, the first conductive layer 11L described above.

[0054] like Figure 1 As shown in (b), the magnetic sensor 110 may also include an element current circuit 75. The element current circuit 75 can supply an element current Id to the first magnetic element 11E. The element current circuit 75 is electrically connected to, for example, one end 11Ee of the first magnetic element 11E and the other end 11Ef of the first magnetic element 11E. The element current circuit 75 supplies an element current Id to a current path between, for example, one end 11Ee of the first magnetic element 11E and the other end 11Ef of the first magnetic element 11E. Based on the element current Id, the resistance of the first magnetic element 11E can be detected. The element current circuit 75 may also be included in the control unit 70.

[0055] like Figure 1 As shown in (a), the length of the first magnetic layer 11 along the first direction (X-axis direction) is set as the first magnetic layer length L11. The distance between the first magnetic component 51 and the first opposing magnetic component 51A along the first direction is set as the first distance g1. For example, the first magnetic layer length L11 is preferably more than twice the first distance g1. As a result, as described later, the magnetic field of the detection object is more efficiently applied to the detection unit. A higher sensitivity can be obtained.

[0056] The length of the first nonmagnetic layer 11n along the first direction (X-axis direction) is referred to as a first nonmagnetic layer length L11n. The first nonmagnetic layer length L11n is preferably equal to or less than the first distance g1, for example. This makes it easier to obtain higher sensitivity.

[0057] The length of the first portion p1 along the first direction (X-axis direction) is set as the first portion length Lp1. The first portion length Lp1 corresponds to the length of the region of the first magnetic layer 11 overlapping with the first magnetic component 51. In one example, the first portion length Lp1 is preferably longer than the first distance g1. It is easy to obtain high sensitivity. The length of the first opposing portion pA1 along the first direction (X-axis direction) is set as the first opposing portion length LpA1. The first opposing portion length LpA1 corresponds to the length of the region of the first magnetic layer 11 overlapping with the first opposing magnetic component 51A. In one example, the first opposing portion length LpA1 is preferably longer than the first distance g1. It is easy to obtain high sensitivity.

[0058] like Figure 1 As shown in (a), the distance between the first part p1 and the first magnetic member 51 along the second direction (Z-axis direction) is set to distance d1. Distance d1 is preferably shorter than the first distance g1, for example. Distance d1 is preferably less than the length (first part length Lp1) of the first part p1 along the first direction (X-axis direction). It is easy to obtain higher sensitivity.

[0059] The distance d1 is preferably, for example, not less than 2 nm. This makes the electrical insulation between the first magnetic layer 11 and the first magnetic member 51 more reliable. The electrical insulation between the first magnetic layer 11 and the first opposing magnetic member 51A is more reliable. The distance d1 may be, for example, not less than 10 nm.

[0060] Figure 2 This is a schematic cross-sectional view illustrating a part of the magnetic sensor according to the first embodiment.

[0061] The first extension portion 11x may further include a first layer 11r. The first layer 11r includes at least one selected from IrMn and PtMn. The first layer 11r is, for example, an antiferromagnetic layer. The first counter magnetic layer 11o is provided between the first magnetic layer 11 (first intermediate portion pM1) and the first layer 11r.

[0062] In this example, the first extension portion 11x includes a magnetic film 11q and a non-magnetic film 11p. The magnetic film 11q is located between the first opposing magnetic layer 11o and the first layer 11r. The non-magnetic film 11p is located between the first opposing magnetic layer 11o and the magnetic film 11q. The non-magnetic film 11p contains Ru, for example. The layer PL including the first opposing magnetic layer 11o, the non-magnetic film 11p and the magnetic film 11q functions as a reference layer. The layer PL is, for example, a magnetization fixed layer. The magnetization of the first magnetic layer 11 is easily changed. The first magnetic layer 11 is, for example, a magnetization free layer.

[0063] The first non-magnetic layer 11n includes, for example, MgO. A high MR ratio can be obtained. The first magnetic layer 11, the first opposing magnetic layer 11o, and the magnetic film 11q include, for example, at least one selected from Fe, Co, and Ni. The first magnetic layer 11, the first opposing magnetic layer 11o, and the magnetic film 11q are, for example, ferromagnetic layers. The first magnetic component 51 and the first opposing magnetic component 51A include, for example, at least one selected from NiFe and FeAlSi. The first magnetic component 51 and the first opposing magnetic component 51A are, for example, soft magnetic materials. The relative magnetic permeability of the first magnetic component 51 and the first opposing magnetic component 51A is, for example, 1000 or more.

[0064] Figure 3 (a)~ Figure 3 (c) is a schematic diagram illustrating the magnetic sensor according to the first embodiment. Figure 3 (a) is Figure 3 (b) A1-A2 line cross-sectional view. Figure 3 (b) is a top view. Figure 3 (c) is a cross-sectional view.

[0065] like Figure 3 (a) and Figure 3 As shown in (b), in the magnetic sensor 111 according to the embodiment, the first sensor unit 10A also includes the first magnetic member 51, the first opposing magnetic member 51A, and the first magnetic element 11E. Figure 3 As shown in (b) of FIG. 1 , in the magnetic sensor 111 , the first magnetic element 11E includes a plurality of first extending portions 11 x .

[0066] The plurality of first extending portions 11 x are arranged in a third direction. The third direction intersects a plane (XZ plane) including the first direction and the second direction. The third direction is, for example, the Y-axis direction.

[0067] like Figure 3 As shown in (c), the direction from one first nonmagnetic layer 11n of the plurality of first extension portions 11x toward another first nonmagnetic layer 11n of the plurality of first extension portions 11x is along the third direction (Y-axis direction).

[0068] like Figure 3 (b) and Figure 3 As shown in (c), the first magnetic element 11E may also include a first connecting member CN1. For example, a first conductive layer 11L may also serve as the first connecting member CN1. The first connecting member CN1 electrically connects one second opposing magnetic layer 12o of the plurality of first extension portions 11x and another first opposing magnetic layer 11o of the plurality of first extension portions 11x.

[0069] For example, the detection parts included in each of the plurality of first extension parts 11x are electrically connected in series. For example, noise can be suppressed. For example, a resistance suitable for detection can be obtained. It is easy to obtain higher sensitivity.

[0070] Hereinafter, examples of the characteristics of the magnetic sensor will be described.

[0071] Figure 4 This is a graph illustrating the characteristics of a magnetic sensor.

[0072] Figure 4 The simulation results of the characteristics when the length of the first magnetic layer 11 along the X-axis direction (the first magnetic layer length L11) is changed are illustrated. In the simulated model, the distance (the first distance g1) between the first magnetic component 51 and the first opposing magnetic component 51A is 5μm. The length of the first non-magnetic layer 11n along the X-axis direction (the first non-magnetic layer length L11n) is 4μm. When the first magnetic layer length L11 is 4μm, the length of the first magnetic layer 11 is the same as the length of the first non-magnetic layer 11n. In such a model, the first magnetic layer length L11 is changed. In this model, the area including the interface between the first non-magnetic layer 11n and the first magnetic layer 11 corresponds to the induction portion. The length of the induction portion does not change, and the length of the first magnetic layer 11 increases or decreases.

[0073] Figure 4 The horizontal axis is the first magnetic layer length L11. The vertical axis is the average magnetic flux density BP at the interface between the first intermediate portion pM1 and the first non-magnetic layer 11n. The magnetic flux density BP is normalized by taking the value when the first magnetic layer length L11 is 4 μm as 1. The magnetic flux density BP corresponds to the sensitivity of detecting the external magnetic field.

[0074] like Figure 4 As shown, when the first magnetic layer length L11 becomes longer, the magnetic flux density BP becomes higher.

[0075] In the embodiment, for example, the first magnetic layer length L11 is preferably at least twice the first distance g1. Thus, the magnetic field of the detection object is more efficiently applied to the detection unit, and higher sensitivity can be obtained.

[0076] Figure 5 This is a graph illustrating the characteristics of a magnetic sensor.

[0077] exist Figure 5In the simulation model, the length of the first non-magnetic layer 11n and the first opposing magnetic layer 11o in the X-axis direction is the same as the length of the first magnetic layer 11 in the X-axis direction (first magnetic layer length L11). The length of the first non-magnetic layer 11n and the first opposing magnetic layer 11o in the X-axis direction changes in conjunction with the change of the first magnetic layer length L11. In the simulation model, the first distance g1 is 5μm. Figure 5 In the model, the region including the interface between the first non-magnetic layer 11n and the first magnetic layer 11 also corresponds to the induction portion. Figure 5 In the model, the length of the induction portion changes in conjunction with the change in the first magnetic layer length L11.

[0078] Figure 5 The horizontal axis is the first magnetic layer length L11. The vertical axis is the average magnetic flux density BP at the interface between the first intermediate portion pM1 and the first nonmagnetic layer 11n. The magnetic flux density BP is normalized by taking the value when the first magnetic layer length L11 is 4 μm as 1.

[0079] like Figure 5 As shown in FIG. 1 , in the case of this model, when the first magnetic layer length L11 becomes excessively long, the magnetic flux density BP decreases. This is because the length of the induction portion increases in conjunction with the increase in the first magnetic layer length L11 .

[0080] As described above, it is preferable that the length of the first nonmagnetic layer 11n in the X-axis direction is kept short and the length of the first magnetic layer 11 in the X-axis direction is long. This can obtain a high magnetic flux density BP. For example, high sensitivity can be obtained.

[0081] Figure 6 (a)~ Figure 6 (c) is a schematic diagram illustrating the magnetic sensor according to the first embodiment. Figure 6 (a) is Figure 6 (b) A1-A2 line cross-sectional view. Figure 6 (b) is a top view. Figure 6 (c) is a cross-sectional view.

[0082] like Figure 6 (a) and Figure 6 As shown in (b), in the magnetic sensor 112 according to the embodiment, the first sensor unit 10A includes the first conductive member 21 in addition to the first magnetic member 51, the first opposing magnetic member 51A, and the first magnetic element 11E. The structure of the magnetic sensor 112 other than this may be the same as that of the magnetic sensor 110.

[0083] In the second direction (Z-axis direction), at least a portion of the first conductive component 21 overlaps with the region 66a between the first magnetic component 51 and the first opposing magnetic component 51A. The first current I1 including an AC component can flow in the first conductive component 21. The first current I1 flows in the first conductive component 21 along a third direction. The third direction intersects with a plane (Z-X plane) including the first direction and the second direction. The third direction is, for example, the Y-axis direction.

[0084] The magnetic sensor 112 may include a first current circuit 71. The first current circuit 71 can supply the first current I1 to the first conductive member 21. The first current circuit 71 may be included in the control unit 70.

[0085] For example, the first current path 71 is electrically connected to the one end 21e of the first conductive member 21 and the other end 21f of the first conductive member 21. The first current I1 flows between the one end 21e and the other end 21f.

[0086] By flowing the first current I1 including an AC component in the first conductive component 21, a magnetic field (AC magnetic field) based on the first current I1 is applied to the detection portion of the first magnetic element 11E. The AC magnetic field includes, for example, a component along the X-axis direction. The AC magnetic field is concentrated by the first magnetic component 51 and the first opposing magnetic component 51A. The concentrated AC magnetic field is applied to the detection portion. The AC magnetic field is applied to the detection portion with good efficiency. As described later, by using the AC magnetic field, unnecessary noise can be suppressed. A higher sensitivity can be obtained.

[0087] Figure 7 (a) and Figure 7 (b) is a schematic diagram illustrating the magnetic sensor according to the first embodiment.

[0088] Figure 7 (a) is Figure 7 (b) A1-A2 line cross-sectional view. Figure 7 (b) is a top view.

[0089] Figure 8 This is a schematic cross-sectional view illustrating the magnetic sensor according to the first embodiment.

[0090] like Figure 7 (a) and Figure 7 As shown in (b), in the magnetic sensor 113 according to the embodiment, the first sensor unit 10A includes the first conductive component 21 in addition to the first magnetic component 51, the first opposing magnetic component 51A, and the first magnetic element 11E. The structure of the magnetic sensor 113 other than this may be the same as that of the magnetic sensor 111. For example, Figure 7 (a) and Figure 8As shown in FIG. 1 , the magnetic sensor 113 is provided with a plurality of first extending portions 11 x .

[0091] In the magnetic sensor 113, at least a portion of the first conductive component 21 also overlaps with the region 66a between the first magnetic component 51 and the first opposing magnetic component 51A in the second direction (Z-axis direction). The first current I1 including an AC component can flow in the first conductive component 21 along the third direction (Y-axis direction). The AC magnetic field based on the first current I1 is concentrated by the first magnetic component 51 and the first opposing magnetic component 51A. The concentrated AC magnetic field is efficiently applied to the detection unit. A higher sensitivity can be obtained.

[0092] In the magnetic sensor involved in the first embodiment (for example, magnetic sensors 110 to 113, etc.), the resistance of the first magnetic element 11E has an even function characteristic with respect to the magnetic field applied to the first magnetic element 11E. The magnetic field, for example, includes an external magnetic field of the detection object. The magnetic field may also include a magnetic field (AC magnetic field) based on the first current I1 including an AC component. For example, the resistance of the first magnetic element 11E has an even function characteristic with respect to the first current I1 supplied to the first conductive component 21. As already explained, the magnetic field includes a component along the X-axis direction.

[0093] Hereinafter, an example of the resistance of the first magnetic element 11E will be described.

[0094] Fig. 9 (a) and Fig. 9 (b) is a graph illustrating the characteristics of the magnetic sensor according to the first embodiment.

[0095] Fig. 9 The horizontal axis of (a) represents the intensity of the external magnetic field Hex applied to the first magnetic element 11E. Fig. 9 The vertical axis of (a) is the resistance Rx of the first magnetic element 11E. The resistance Rx corresponds to, for example, the resistance between one end 11Ee of the first magnetic element 11E and the other end 11Ef of the first magnetic element 11E. Fig. 9 (a) corresponds to the R-H characteristic. The external magnetic field Hex has a component in the X-axis direction.

[0096] like Fig. 9As shown in (a), the resistance Rx has an even function characteristic with respect to the external magnetic field Hex. For example, the resistance Rx of the first magnetic element 11E is the first value R1 when the first magnetic field Hex1 is applied to the first magnetic element 11E. The resistance Rx is the second value R2 when the second magnetic field Hex2 is applied to the first magnetic element 11E. The resistance Rx is the third value R3 when the third magnetic field Hex3 is applied to the first magnetic element 11E. The absolute value of the first magnetic field Hex1 is smaller than the absolute value of the second magnetic field Hex2, and smaller than the absolute value of the third magnetic field Hex3. The direction of the second magnetic field Hex2 is opposite to the direction of the third magnetic field Hex3. The first value R1 is lower than the second value R2, and lower than the third value R3.

[0097] For example, the first magnetic field Hex1 is substantially 0. When the external magnetic field Hex is not applied to the first magnetic element 11E, the resistance Rx is the fourth value R4. The first value R1 may be substantially the same as the fourth value R4 when the external magnetic field Hex is not applied. For example, the absolute value of the difference between the first value R1 and the fourth value R4 is less than 0.01 relative to the fourth value R4. The ratio may also be less than 0.001. For positive and negative external magnetic fields, the characteristics of an even function can be substantially obtained.

[0098] Fig. 9 The horizontal axis of (b) represents the first current I1 supplied to the first conductive member 21 . Fig. 9 The vertical axis of (b) is the resistance Rx of the first magnetic element 11E. Fig. 9 As shown in (b) of FIG. 8 , the resistor Rx has an even function characteristic with respect to the first current I1 .

[0099] For example, the resistance Rx of the first magnetic element 11E is the first value R1 when the first value current Ia1 is supplied to the first conductive component 21. The resistance Rx is the second value R2 when the second value current Ia2 is supplied to the first conductive component 21. The resistance Rx is the third value R3 when the third value current Ia3 is supplied to the first conductive component 21. The absolute value of the first value current Ia1 is smaller than the absolute value of the second value current Ia2, and smaller than the absolute value of the third value current Ia3. The first value current Ia1 can be substantially 0, for example. The direction of the second value current Ia2 is opposite to the direction of the third value current Ia3.

[0100] For example, the first value current Ia1 is substantially 0. For example, when no current flows in the first conductive component 21, the resistance Rx is the fourth value R4. For example, the first value R1 is substantially the same as the fourth value R4 when no current flows. For example, the absolute value of the difference between the first value R1 and the fourth value R4 is less than 0.01 relative to the fourth value R4. The ratio may also be less than 0.001. For positive and negative currents, the characteristics of an even function can be substantially obtained.

[0101] By utilizing the characteristics of such an even function, highly sensitive detection can be performed as follows.

[0102] Hereinafter, an example will be described in which the first current I1 is an alternating current and substantially contains no direct current component. The first current I1 (alternating current) is supplied to the first conductive member 21, and an alternating magnetic field based on the alternating current is applied to the first magnetic element 11E. An example of the change in the resistance Rx at this time will be described.

[0103] Fig.10 (a)~ Fig.10 (c) is a graph illustrating the characteristics of the magnetic sensor according to the first embodiment.

[0104] Fig.10 (a) shows the characteristics when the signal magnetic field Hsig (external magnetic field) applied to the first magnetic element 11E is zero. Fig.10 (b) shows the characteristics when the signal magnetic field Hsig is positive. Fig.10 (c) shows the characteristic when the signal magnetic field Hsig is negative. These graphs show the relationship between the magnetic field H and the resistance R (corresponding to the resistance Rx).

[0105] like Fig.10 As shown in (a), when the signal magnetic field Hsig is 0, the resistance R exhibits symmetrical characteristics with respect to the positive and negative magnetic fields H. When the AC magnetic field Hac is zero, the resistance R is a low resistance Ro. For example, the magnetization of the magnetization free layer rotates in substantially the same manner with respect to the positive and negative magnetic fields H. Therefore, a symmetrical resistance change can be obtained. The resistance R changes with respect to the AC magnetic field Hac and becomes the same value under the positive and negative polarities. The period of the change of the resistance R becomes 1 / 2 times the period of the AC magnetic field Hac. The change of the resistance R substantially has no frequency component of the AC magnetic field Hac.

[0106] like Fig.10 As shown in (b), when a positive signal magnetic field Hsig is applied, the characteristic of the resistor R shifts toward the positive magnetic field H. In the positive AC magnetic field Hac, for example, the resistor R becomes high. In the negative AC magnetic field Hac, the resistor R becomes low.

[0107] like Fig.10 As shown in (c), when a negative signal magnetic field Hsig is applied, the characteristic of the resistor R shifts toward the negative magnetic field H. In the positive AC magnetic field Hac, for example, the resistor R becomes low. In the negative AC magnetic field Hac, the resistor R becomes high.

[0108] When a signal magnetic field Hsig of a predetermined magnitude is applied, a change in resistance R occurs that is different from the positive and negative sides of the AC magnetic field Hac. The period of the change in resistance R with respect to the positive and negative sides of the AC magnetic field Hac is the same as the period of the AC magnetic field Hac. An output voltage having an AC frequency component corresponding to the signal magnetic field Hsig is generated.

[0109] The above characteristics can be obtained when the signal magnetic field Hsig does not change over time. When the signal magnetic field Hsig changes over time, it becomes as follows. The frequency of the signal magnetic field Hsig is set to the signal frequency fsig. The frequency of the AC magnetic field Hac is set to the AC frequency fac. At this time, at the frequency of fac±fsig, an output corresponding to the signal magnetic field Hsig is generated.

[0110] When the signal magnetic field Hsig changes over time, the signal frequency fsig is, for example, 1 kHz or less. On the other hand, the AC frequency fac is sufficiently higher than the signal frequency fsig. For example, the AC frequency fac is 10 times or more of the signal frequency fsig.

[0111] For example, by extracting the output voltage of the component (AC frequency component) of the same period (frequency) as the period (frequency) of the AC magnetic field Hac, the signal magnetic field Hsig can be detected with high precision. In the magnetic sensor (magnetic sensor 112 or magnetic sensor 113) involved in the embodiment, such characteristics can be used to detect the external magnetic field Hex (signal magnetic field Hsig) as the detection object with high sensitivity. In the embodiment, the external magnetic field Hex (signal magnetic field Hsig) and the AC magnetic field Hac based on the first current I1 can be efficiently applied to the first magnetic element 11E through the first magnetic component 51 and the first opposing magnetic component 51A. High sensitivity can be obtained.

[0112] (Second embodiment)

[0113] Fig.11 (a) and Fig.11 (b) is a schematic diagram illustrating the magnetic sensor according to the second embodiment.

[0114] Fig.11 (a) is Fig.11 (b) A1-A2 line cross-sectional view. Fig.11 (b) is a top view.

[0115] Fig.12 (a) and Fig.12 (b) is a schematic cross-sectional view illustrating the magnetic sensor according to the second embodiment.

[0116] like Fig.11 (a) and Fig.11 As shown in (b) of FIG. 1 , the magnetic sensor 114 according to the embodiment includes a first sensor unit 10A. The first sensor unit 10A includes another first opposing magnetic member 51B in addition to the first magnetic member 51 , the first opposing magnetic member 51A, and the first magnetic element 11E.

[0117] The first opposing magnetic member 51A is located between the first magnetic member 51 and the other first opposing magnetic member 51B in the first direction (X-axis direction).

[0118] like Fig.11 As shown in (a), the first extension portion 11x includes a second opposing magnetic layer 12o and a second non-magnetic layer 12n in addition to the first magnetic layer 11, the first opposing magnetic layer 11o and the first non-magnetic layer 11n. The first magnetic layer 11 includes a second opposing portion pA2 and a second intermediate portion pM2 in addition to the first portion p1, the first opposing portion pA1 and the first intermediate portion pM1. The first opposing portion pA1 is located between the first portion p1 and the second opposing portion pA2 in the first direction (X-axis direction). The second intermediate portion pM2 is located between the first opposing portion pA1 and the second opposing portion pA2.

[0119] like Fig.11 As shown in (a) of FIG. 1 , the first non-magnetic layer 11n is located between at least a portion of the first intermediate portion pM1 and the first opposing magnetic layer 11o in the second direction (Z-axis direction). Fig.11 As shown in (a) of FIG. 1 , the second nonmagnetic layer 12 n is located between at least a portion of the second intermediate portion pM2 and the second counter magnetic layer 12 o in the second direction (Z-axis direction).

[0120] The resistance of the first magnetic element 11E corresponds to the resistance of the current path including the first magnetic layer 11 , the first opposing magnetic layer 11 o , the first nonmagnetic layer 11 n , the second nonmagnetic layer 12 n , and the second opposing magnetic layer 12 o .

[0121] like Fig.11 As shown in (b), in this example, the first magnetic element 11E includes a plurality of first extension portions 11x and a first connecting member CN1. The plurality of first extension portions 11x are arranged along the third direction. The third direction intersects a plane (Z-X plane) including the first direction and the second direction. The third direction is, for example, the Y-axis direction.

[0122] like Fig.11 (b) and Fig.12 As shown in (b) of FIG. 1 , the first connection member CN1 electrically connects one second counter magnetic layer 12 o of the plurality of first extension portions 11 x and the other second counter magnetic layer 12 o of the plurality of first extension portions 11 x .

[0123] For example, the other first opposing magnetic layer 11o of the plurality of first extension portions 11x becomes one end 11Ee of the first magnetic element 11E. The one first opposing magnetic layer 11o of the plurality of first extension portions 11x becomes the other end 11Ef of the first magnetic element 11E.

[0124] like Fig.11 As shown in (b), for example, the element current circuit 75 supplies the element current Id to the current path between the one end 11Ee of the first magnetic element 11E and the other end 11Ef of the first magnetic element 11E. The value corresponding to the resistance of the first magnetic element 11E can be detected by the change of the element current Id.

[0125] Fig.13 (a) and Fig.13 (b) is a schematic diagram illustrating the magnetic sensor according to the second embodiment.

[0126] Fig.13 (a) is Fig.13 (b) A1-A2 line cross-sectional view. Fig.13 (b) is a top view.

[0127] Fig.14 (a) and Fig.14 (b) is a schematic cross-sectional view illustrating the magnetic sensor according to the second embodiment.

[0128] like Fig.13 (a) and Fig.13 As shown in (b), in the magnetic sensor 115 according to the embodiment, the first sensor unit 10A includes the first conductive member 21 in addition to the first magnetic member 51, the first opposing magnetic member 51A, the first magnetic element 11E, and the other first opposing magnetic member 51B. The structure of the magnetic sensor 115 other than this may be the same as that of the magnetic sensor 114.

[0129] In the magnetic sensor 115 , the first conductive component 21 overlaps with a region 66a between the first magnetic component 51 and the first opposing magnetic component 51A and a region 66aA between the first opposing magnetic component 51A and another first opposing magnetic component 51B in the second direction (Z-axis direction).

[0130] The first current circuit 71 is electrically connected to one end 21e of the first conductive member 21 and the other end 21f of the first conductive member 21. The first current I1 including an AC component is supplied from the first current circuit 71 to the first conductive member 21.

[0131] (Third embodiment)

[0132] Fig.15 , Fig.16 as well as Fig.17 (a)~ Fig.17 (c) is a schematic diagram illustrating the magnetic sensor according to the third embodiment.

[0133] Fig.15 and Fig.16 It is a top view. Fig.17 (a)~ Fig.17 (c) is a cross-sectional view.

[0134] like Fig.15 As shown, the magnetic sensor 120 involved in the embodiment includes, in addition to the first sensor unit 10A having the first magnetic element 11E, a second sensor unit 10B having the second magnetic element 12E, a third sensor unit 10C having the third magnetic element 13E, a fourth sensor unit 10D having the fourth magnetic element 14E, and an element current circuit 75.

[0135] Each of the second magnetic element 12E to the fourth magnetic element 14E may have the structure of the first magnetic element 11E. In this example, these magnetic elements have the structure of the first magnetic element 11E in the magnetic sensor 113.

[0136] In this example, one end 11Ee of the first magnetic element 11E is electrically connected to one end 13Ee of the third magnetic element 13E. The other end 11Ef of the first magnetic element 11E is electrically connected to one end 12Ee of the second magnetic element 12E. The other end 13Ef of the third magnetic element 13E is electrically connected to one end 14Ee of the fourth magnetic element 14E. The other end 12Ef of the second magnetic element 12E is electrically connected to the other end 14Ef of the fourth magnetic element 14E.

[0137] like Fig.15 As shown, the element current circuit 75 can supply the element current Id between the first connection point CP1 and the second connection point CP2, wherein the first connection point CP1 is the connection point of one end 11Ee of the first magnetic element 11E and one end 13Ee of the third magnetic element 13E, and the second connection point CP2 is the connection point of the other end 12Ef of the second magnetic element 12E and the other end 14Ef of the fourth magnetic element 14E.

[0138] like Fig.15 As shown, the magnetic sensor 120 may also include a detection circuit 73. The detection circuit 73 can detect a potential change between a third connection point CP3 and a fourth connection point CP4, wherein the third connection point CP3 is a connection point between the other end 11Ef of the first magnetic element 11E and one end 12Ee of the second magnetic element 12E, and the fourth connection point CP4 is a connection point between the other end 13Ef of the third magnetic element 13E and one end 14Ee of the fourth magnetic element 14E.

[0139] The first magnetic element 11E to the fourth magnetic element 14E are bridge-connected. A potential change between two midpoints (third connection point CP3 and fourth connection point CP4) in the bridge circuit is detected by the detection circuit 73. The bridge circuit enables detection with higher sensitivity.

[0140] As about Figure 7 As described in (a) above, the first sensor unit 10A includes the first conductive member 21. Figure 7 As shown in (a) of FIG. 1 , at least a portion of the first conductive member 21 overlaps with a region 66 a between the first magnetic member 51 and the first opposing magnetic member 51A in the second direction (Z-axis direction).

[0141] like Fig.17 As shown in (a), the second sensor unit 10B includes a second magnetic component 52, a second opposing magnetic component 52A, and a second conductive component 22. At least a portion of the second conductive component 22 overlaps with a region 66b between the second magnetic component 52 and the second opposing magnetic component 52A in the second direction (Z-axis direction). The region 66b may be a portion of the second insulating component 65b.

[0142] like Fig.17 As shown in (b), the third sensor unit 10C includes a third magnetic component 53, a third opposing magnetic component 53A, and a third conductive component 23. At least a portion of the third conductive component 23 overlaps with a region 66c between the third magnetic component 53 and the third opposing magnetic component 53A in the second direction (Z-axis direction). The region 66c may be a portion of the third insulating component 65c.

[0143] like Fig.17 As shown in (c), the fourth sensor unit 10D includes a fourth magnetic component 54, a fourth opposing magnetic component 54A, and a fourth conductive component 24. At least a portion of the fourth conductive component 24 overlaps with a region 66d between the fourth magnetic component 54 and the fourth opposing magnetic component 54A in the second direction (Z-axis direction). The region 66d may be a portion of the fourth insulating component 65d.

[0144] like Fig.16 As shown, one end 21e of the first conductive component 21 is electrically connected to one end 23e of the third conductive component 23. The other end 21f of the first conductive component 21 is electrically connected to one end 22e of the second conductive component 22. The other end 23f of the third conductive component 23 is electrically connected to one end 24e of the fourth conductive component 24. The other end 22f of the second conductive component 22 is electrically connected to the other end 24f of the fourth conductive component 24.

[0145] like Fig.16As shown, the first current circuit 71 can supply the first current I1 including the AC component between the fifth connection point CP5, which is the connection point between the other end 21f of the first conductive member 21 and the one end 22e of the second conductive member 22, and the sixth connection point CP6, which is the connection point between the other end 23f of the third conductive member 23 and the one end 24e of the fourth conductive member 24. By using the first current I1 including the AC component, the noise component can be further suppressed. A higher sensitivity can be obtained.

[0146] In the second embodiment, the relationship (phase) between the direction of the current flowing in the first magnetic element 11E of the first sensor unit 10A and the direction of the current flowing in the first conductive member 21 is opposite to the relationship (phase) between the direction of the current flowing in the third magnetic element 13E of the third sensor unit 10C and the direction of the current flowing in the third conductive member 23. The relationship (phase) between the direction of the current flowing in the second magnetic element 12E of the second sensor unit 10B and the direction of the current flowing in the second conductive member 22 is opposite to the relationship (phase) between the direction of the current flowing in the fourth magnetic element 14E of the fourth sensor unit 10D and the direction of the current flowing in the fourth conductive member 24. The relationship (phase) between the direction of the current flowing in the first magnetic element 11E of the first sensor unit 10A and the direction of the current flowing in the first conductive member 21 is opposite to the relationship (phase) between the direction of the current flowing in the second magnetic element 12E of the second sensor unit 10B and the direction of the current flowing in the second conductive member 22.

[0147] For example Fig.17 As shown in (a), the direction from the second magnetic component 52 toward the second opposing magnetic component 52A is along the first direction (X-axis direction). The second magnetic element 12E includes one or more second extension portions 12x (refer to Fig.15 ).like Fig.17 As shown in (a), the second extension portion 12x includes the second magnetic layer 12, the second opposing magnetic layer 12o and the second non-magnetic layer 12n. The second magnetic layer 12 includes the second portion p2, the second opposing portion pA2 and the second intermediate portion pM2. The direction from the second portion p2 toward the second opposing portion pA2 is along the second direction (Z-axis direction). The second intermediate portion pM2 is located between the second portion p2 and the second opposing portion pA2. The second non-magnetic layer 12n is located between at least a portion of the second intermediate portion pM2 and the second opposing magnetic layer 12o in the second direction.

[0148] For example Fig.17 As shown in (b), the direction from the third magnetic component 53 toward the third opposing magnetic component 53A is along the first direction (X-axis direction). The third magnetic element 13E includes one or more third extension portions 13x (refer to Fig.15 ).like Fig.17 As shown in (b), the third extension portion 13x includes the third magnetic layer 13, the third opposing magnetic layer 13o and the third non-magnetic layer 13n. The third magnetic layer 13 includes the third portion p3, the third opposing portion pA3 and the third intermediate portion pM3. The direction from the third portion p3 toward the third opposing portion pA3 is along the second direction (Z-axis direction). The third intermediate portion pM3 is located between the third portion p3 and the third opposing portion pA3. The third non-magnetic layer 13n is located between at least a portion of the third intermediate portion pM3 and the third opposing magnetic layer 13o in the second direction.

[0149] For example Fig.17 As shown in (c), the direction from the fourth magnetic component 54 toward the fourth opposing magnetic component 54A is along the first direction (X-axis direction). The fourth magnetic element 14E includes one or more fourth extension portions 14x (refer to Fig.15 ).like Fig.17 As shown in (c), the fourth extension portion 14x includes the fourth magnetic layer 14, the fourth opposing magnetic layer 14o and the fourth non-magnetic layer 14n. The fourth magnetic layer 14 includes the fourth portion p4, the fourth opposing portion pA4 and the fourth intermediate portion pM4. The direction from the fourth portion p4 toward the fourth opposing portion pA4 is along the second direction (Z-axis direction). The fourth intermediate portion pM4 is located between the fourth portion p4 and the fourth opposing portion pA4. The fourth non-magnetic layer 14n is located between at least a portion of the fourth intermediate portion pM4 and the fourth opposing magnetic layer 14o in the second direction.

[0150] (Fourth embodiment)

[0151] The fourth embodiment relates to an inspection device. As described later, the inspection device may include a diagnostic device.

[0152] Fig.18 This is a schematic diagram illustrating an inspection device according to a fourth embodiment.

[0153] like Fig.18 As shown, the inspection device 550 according to the embodiment includes a magnetic sensor according to the embodiment (in Fig.18In the example of the magnetic sensor 110) and the processing unit 78. The processing unit 78 processes the output signal SigX obtained from the magnetic sensor 110. In this example, the processing unit 78 includes a sensor control circuit unit 75c, a first lock-in amplifier 75a, and a second lock-in amplifier 75b. For example, the first current circuit 71 is controlled by the sensor control circuit unit 75c, and the first current I1 including an AC component is supplied from the first current circuit 71 to the sensor unit 10S. The frequency of the AC component of the first current I1 is, for example, below 100kHz. The element current Id is supplied from the element current circuit 75 to the sensor unit 10S. The sensor unit 10S includes, for example, the first sensor unit 10A, etc. The sensor unit 10S may also include the first sensor unit 10A to the fourth sensor unit 10D, etc. The potential change in the sensor unit 10S is detected by the detection circuit 73. For example, the output of the detection circuit 73 becomes the output signal SigX.

[0154] In this example, the inspection device 550 includes a magnetic field applying unit 76A. The magnetic field applying unit 76A can apply a magnetic field to the inspection object 80. The inspection object 80 is, for example, an inspection object. The inspection object 80 includes at least an inspection conductive component 80c such as metal. When the magnetic field of the magnetic field applying unit 76A is applied to the inspection conductive component 80c, an eddy current is generated, for example, in the inspection conductive component 80c. When the inspection conductive component 80c has damage, etc., the state of the eddy current will change. By detecting the magnetic field generated by the eddy current by a magnetic sensor (such as a magnetic sensor 110, etc.), the state of the inspection conductive component 80c (such as damage, etc.) can be detected. The magnetic field applying unit 76A is, for example, an eddy current generating unit.

[0155] In this example, the magnetic field applying unit 76A includes an applying control circuit unit 76a, a driving amplifier 76b, and a coil 76c. Under the control of the applying control circuit unit 76a, a current is supplied to the driving amplifier 76b. The current is, for example, alternating current. The frequency of the current is, for example, an eddy current excitation frequency. The eddy current excitation frequency is, for example, greater than 10 Hz and less than 100 kHz. The eddy current excitation frequency may also be, for example, less than 100 kHz.

[0156] For example, information (e.g., a signal) related to the frequency of the AC component of the first current I1 is provided from the sensor control circuit unit 75c to the first lock-in amplifier 75a as a reference wave (reference signal). The output of the first lock-in amplifier 75a is provided to the second lock-in amplifier 75b. Information (e.g., a signal) related to the eddy current excitation frequency is provided from the application control circuit unit 76a to the second lock-in amplifier 75b as a reference wave (reference signal). The second lock-in amplifier 75b can output a signal component corresponding to the eddy current excitation frequency.

[0157] Thus, for example, the processing unit 78 includes a first lock-in amplifier 75a. The output signal SigX obtained from the magnetic sensor 110 and the signal SigR1 corresponding to the frequency of the AC component included in the first current I1 are input to the first lock-in amplifier 75a. The first lock-in amplifier 75a can output an output signal SigX1 using the signal SigR1 corresponding to the frequency of the AC component included in the first current I1 as a reference wave (reference signal). By providing the first lock-in amplifier 75a, noise can be suppressed and high-sensitivity detection can be achieved.

[0158] The processing unit 78 may also include a second lock-in amplifier 75b. The output signal SigX1 of the first lock-in amplifier 75a and the signal SigR2 corresponding to the frequency (eddy current excitation frequency) of the supply signal (in this example, the magnetic field of the magnetic field application unit 76A) supplied to the detection object 80 (inspection object) are input to the second lock-in amplifier 75b. The second lock-in amplifier 75b can output the output signal SigX2 using the signal SigR2 corresponding to the frequency of the supply signal supplied to the detection object 80 (inspection object) as a reference wave (reference signal). By providing the second lock-in amplifier 75b, noise can be further suppressed and detection with higher sensitivity can be achieved.

[0159] The inspection device 550 can inspect abnormalities such as damage of the inspection conductive member 80 c of the inspection object 80 .

[0160] Fig.19 This is a schematic diagram illustrating an inspection device according to a third embodiment.

[0161] like Fig.19 As shown, the inspection device 551 involved in the embodiment includes the magnetic sensor involved in the embodiment (for example, the magnetic sensor 110) and the processing unit 78. The structures of the magnetic sensor and the processing unit 78 in the inspection device 551 can be the same as those in the inspection device 550. In this example, the inspection device 551 includes a detection object driving unit 76B. The detection object driving unit 76B can supply current to the inspection conductive component 80c included in the detection object 80. The inspection conductive component 80c is, for example, a wiring included in the detection object 80. The magnetic field generated by the current 80i flowing in the inspection conductive component 80c is detected by the magnetic sensor 110. The inspection of the inspection conductive component 80c can be performed based on the abnormality of the detection result of the magnetic sensor 110. The detection object 80 can also be an electronic device such as a semiconductor device. The detection object 80 can also be, for example, a battery.

[0162] In this example, the detection object driving unit 76B includes an application control circuit unit 76a and a driving amplifier 76b. By applying the control of the control circuit unit 76a, the driving amplifier 76b is controlled, and the driving amplifier 76b supplies current to the inspection conductive component 80c. The current is, for example, alternating current. For example, an alternating current is supplied to the inspection conductive component 80c. The frequency of the alternating current is, for example, above 10 Hz and below 100 kHz. The frequency may also be less than 100 kHz, for example. In this example, it is also possible to achieve high-sensitivity detection by providing a first lock-in amplifier 75a and a second lock-in amplifier 75b, for example, suppressing noise. In an example of the inspection device 551, a plurality of magnetic sensors (for example, a plurality of magnetic sensors 110) may also be provided. The plurality of magnetic sensors are, for example, a sensor array. The inspection of the inspection conductive component 80c can be performed in a short time by the sensor array. In an example of the inspection device 551, the inspection of the inspection conductive component 80c can also be performed by scanning the magnetic sensor (for example, the magnetic sensor 110).

[0163] Fig. 20 It is a schematic perspective view showing an inspection device according to a fourth embodiment.

[0164] like Fig. 20 As shown, the inspection device 710 involved in the embodiment includes a magnetic sensor 150a and a processing unit 770. The magnetic sensor 150a can be a magnetic sensor involved in any one of the first embodiment to the third embodiment and its deformation. The processing unit 770 processes the output signal obtained from the magnetic sensor 150a. In the processing unit 770, it is also possible to compare the signal obtained from the magnetic sensor 150a with a reference value. The processing unit 770 can output the inspection result based on the processing result.

[0165] For example, the inspection object 680 is inspected by the inspection device 710. The inspection object 680 is, for example, an electronic device (including a semiconductor circuit, etc.). The inspection object 680 may also be, for example, a battery 610, etc.

[0166] For example, the magnetic sensor 150a according to the embodiment may be used together with the battery 610. For example, the battery system 600 includes the battery 610 and the magnetic sensor 150a. The magnetic sensor 150a can detect a magnetic field generated by a current flowing in the battery 610.

[0167] Fig.21 It is a schematic plan view showing an inspection device according to a fourth embodiment.

[0168] like Fig.21As shown, the magnetic sensor 150a includes, for example, a plurality of magnetic sensors according to the embodiment. In this example, the magnetic sensor 150a includes a plurality of magnetic sensors (such as the magnetic sensor 110, etc.). The plurality of magnetic sensors are, for example, arranged along two directions (such as the X-axis direction and the Y-axis direction). The plurality of magnetic sensors 110 are, for example, arranged on a substrate.

[0169] The magnetic sensor 150a can detect the magnetic field generated by the current flowing in the inspection object 680 (for example, it can also be a battery 610). For example, when the battery 610 is close to an abnormal state, an abnormal current sometimes flows in the battery 610. By detecting the abnormal current by the magnetic sensor 150a, the state change of the battery 610 can be known. For example, when the magnetic sensor 150a is placed close to the battery 610, the sensor group driving unit in two directions can be used to inspect the entire battery 610 in a short time. The magnetic sensor 150a can also be used to inspect the battery 610 during the manufacture of the battery 610.

[0170] The magnetic sensor according to the embodiment can be applied to, for example, an inspection device 710 such as a diagnostic device. Fig. 22 It is a schematic diagram showing a magnetic sensor and an inspection device according to a fourth embodiment.

[0171] like Fig. 22 As shown, the diagnostic device 500 as an example of the inspection device 710 includes the magnetic sensor 150. The magnetic sensor 150 includes the magnetic sensors described in the first to fifth embodiments and their modifications.

[0172] In the diagnostic device 500, the magnetic sensor 150 is, for example, a magnetoencephalogram. The magnetoencephalogram detects the magnetic field emitted by the cranial nerves. When the magnetic sensor 150 is used in the magnetoencephalogram, the size of the magnetic element included in the magnetic sensor 150 is, for example, greater than 1 mm and less than 10 mm. This size is, for example, the length including the MFC.

[0173] like Fig. 22 As shown, the magnetic sensor 150 (magnetoencephalograph) is, for example, worn on the head of a human body. The magnetic sensor 150 (magnetoencephalograph) includes a sensor unit 301. The magnetic sensor 150 (magnetoencephalograph) may also include a plurality of sensor units 301. The number of the plurality of sensor units 301 is, for example, about 100 (e.g., more than 50 and less than 150). The plurality of sensor units 301 are provided on a flexible substrate 302.

[0174] The magnetic sensor 150 may include, for example, a circuit for differential detection, etc. The magnetic sensor 150 may include a sensor different from the magnetic sensor (for example, a potential terminal or an acceleration sensor, etc.).

[0175] The size of the magnetic sensor 150 is smaller than that of a conventional SQUID magnetic sensor. Therefore, it is easy to install a plurality of sensor units 301. It is easy to install a plurality of sensor units 301 and other circuits. It is easy for a plurality of sensor units 301 and other sensors to coexist.

[0176] The base 302 may include an elastic body such as silicone resin, for example. A plurality of sensor units 301 are connected to the base 302, for example. The base 302 may be in close contact with the head, for example.

[0177] The input / output wire 303 of the sensor unit 301 is connected to the sensor driving unit 506 and the signal input / output unit 504 of the diagnostic device 500. Based on the power from the sensor driving unit 506 and the control signal from the signal input / output unit 504, the magnetic field is measured in the sensor unit 301. The result is input to the signal input / output unit 504. The signal obtained in the signal input / output unit 504 is provided to the signal processing unit 508. In the signal processing unit 508, for example, noise removal, filtering, amplification, and signal calculation are performed. The signal processed in the signal processing unit 508 is provided to the signal analysis unit 510. The signal analysis unit 510, for example, extracts a specific signal for brain magnetometry. In the signal analysis unit 510, for example, signal analysis is performed to match the signal phase.

[0178] The output of the signal analysis unit 510 (data for which the signal analysis has been completed) is provided to the data processing unit 512. Data analysis is performed in the data processing unit 512. In this data analysis, for example, image data of MRI (Magnetic Resonance Imaging) or the like can be taken in. In this data analysis, for example, scalp potential information of EEG (Electroencephalogram) or the like can be taken in. For example, a data unit 514 of MRI or EEG or the like is connected to the data processing unit 512. Through data analysis, for example, neural flash point analysis or inverse problem analysis is performed.

[0179] The result of data analysis is provided to, for example, the imaging diagnosis unit 516. The imaging diagnosis unit 516 performs imaging. The imaging assists the diagnosis.

[0180] The above series of operations are controlled by, for example, the control mechanism 502. For example, necessary data such as primary signal data or metadata during data processing is stored in the data server. The data server and the control mechanism may also be integrated.

[0181] The diagnostic device 500 according to the embodiment includes the magnetic sensor 150 and a processing unit that processes an output signal obtained from the magnetic sensor 150. The processing unit includes, for example, at least one of a signal processing unit 508 and a data processing unit 512. The processing unit includes, for example, a computer.

[0182] exist Fig. 22 In the magnetic sensor 150 shown, the sensor unit 301 is disposed on the head of the human body. The sensor unit 301 may also be disposed on the chest of the human body. Thus, magnetocardiography can be performed. For example, the sensor unit 301 may also be disposed on the abdomen of a pregnant woman. Thus, a fetal heartbeat check can be performed.

[0183] It is preferable that the magnetic sensor device including the subject is placed in a shielded room. This can suppress the influence of, for example, geomagnetism or magnetic noise.

[0184] For example, a mechanism may be provided to partially shield the measurement site of the human body or the sensor unit 301. For example, a shielding mechanism may be provided in the sensor unit 301. For example, effective shielding may be performed during signal analysis or data processing.

[0185] In an embodiment, the substrate 302 may be flexible or substantially inflexible. Fig. 22 In the example shown, the base 302 is a base formed by processing a continuous film into a hat shape. The base 302 may also be a mesh. Thus, for example, good wearability can be obtained. For example, the close fit of the base 302 to the human body can be improved. The base 302 may also be a helmet shape and hard.

[0186] Fig.23 It is a schematic diagram showing an inspection device according to a fourth embodiment.

[0187] Fig.23 This is an example of a magnetometer. In this example, a sensor unit 301 is provided on a flat plate-shaped hard base 305 .

[0188] exist Fig.23 In the example shown, the input and output of the signal obtained from the sensor unit 301 are related to Fig. 22 The input and output are the same as described above. Fig.23 In the example shown, the processing of the signal obtained from the sensor unit 301 is similar to that of Fig. 22 The processing described is the same.

[0189] As a device for measuring weak magnetic fields such as magnetic fields generated from biological bodies, there is a reference example using a SQUID (Superconducting Quantum Interference Device) magnetic sensor. In this reference example, superconductivity is used, so the device is large and the power consumption is also large. The burden on the measurement object (patient) is large.

[0190] According to the embodiment, the device can be made small. The power consumption can be suppressed. The burden on the measurement object (patient) can be reduced. According to the embodiment, the SN ratio of magnetic field detection can be improved. The sensitivity can be improved.

[0191] The implementation method may also include the following technical solutions (for example, technical solutions).

[0192] (Technical Solution 1)

[0193] A magnetic sensor includes a first sensor unit, wherein the first sensor unit includes:

[0194] A first magnetic component;

[0195] a first opposing magnetic member, a direction from the first magnetic member toward the first opposing magnetic member along a first direction; and

[0196] a first magnetic element, comprising one or more first extensions,

[0197] The first extension portion includes a first magnetic layer, a first opposing magnetic layer, and a first non-magnetic layer.

[0198] The first magnetic layer includes a first portion, a first opposing portion, and a first intermediate portion.

[0199] A direction from the first portion toward the first opposing portion is along the first direction,

[0200] The first intermediate portion is located between the first portion and the first opposing portion,

[0201] The first nonmagnetic layer is located between at least a portion of the first intermediate portion and the first opposing magnetic layer in a second direction intersecting the first direction.

[0202] (Technical Solution 2)

[0203] According to the magnetic sensor described in technical solution 1,

[0204] The position of the first nonmagnetic layer in the first direction is located between the position of the first magnetic member in the first direction and the position of the first opposing magnetic member in the first direction.

[0205] (Technical Solution 3)

[0206] According to the magnetic sensor described in technical solution 1 or 2,

[0207] The first sensor unit further includes a first insulating member,

[0208] At least a portion of the first insulating member is located between the first portion and the first magnetic member and between the first opposing portion and the first opposing magnetic member.

[0209] (Technical Solution 4)

[0210] The magnetic sensor according to any one of technical solutions 1 to 3,

[0211] A first magnetic layer length of the first magnetic layer along the first direction is at least twice a first distance between the first magnetic member and the first opposing magnetic member along the first direction.

[0212] (Technical Solution 5)

[0213] According to the magnetic sensor described in technical solution 4,

[0214] A first nonmagnetic layer length of the first nonmagnetic layer along the first direction is less than or equal to the first distance.

[0215] (Technical Solution 6)

[0216] The magnetic sensor according to any one of technical solutions 1 to 5,

[0217] The first extension portion further includes a first layer,

[0218] The first layer includes at least one selected from IrMn and PtMn,

[0219] The first opposing magnetic layer is provided between the first magnetic layer and the first layer.

[0220] The first nonmagnetic layer includes MgO.

[0221] (Technical Solution 7)

[0222] The magnetic sensor according to any one of technical solutions 1 to 6,

[0223] The first sensor unit includes a first conductive member.

[0224] At least a portion of the first conductive member overlaps with a region between the first magnetic member and the first opposing magnetic member in the second direction.

[0225] A first current including an AC component can flow through the first conductive member,

[0226] The first current flows in the first conductive component along a third direction,

[0227] The third direction intersects a plane including the first direction and the second direction.

[0228] (Technical Solution 8)

[0229] The magnetic sensor according to any one of technical solutions 1 to 7,

[0230] The resistance of the first magnetic element has an even function characteristic with respect to a magnetic field applied to the first magnetic element.

[0231] (Technical Solution 9)

[0232] The magnetic sensor according to any one of technical solutions 1 to 8,

[0233] The resistance of the first magnetic element is a first value when a first magnetic field is applied to the first magnetic element.

[0234] The resistance has a second value when a second magnetic field is applied to the first magnetic element.

[0235] The resistance has a third value when a third magnetic field is applied to the first magnetic element.

[0236] The absolute value of the first magnetic field is smaller than the absolute value of the second magnetic field and smaller than the absolute value of the third magnetic field.

[0237] The direction of the second magnetic field is opposite to the direction of the third magnetic field.

[0238] The first value is lower than the second value, and lower than the third value.

[0239] (Technical Solution 10)

[0240] The magnetic sensor according to any one of technical solutions 1 to 9,

[0241] The first extension portion includes a second opposing magnetic layer and a second non-magnetic layer.

[0242] The first non-magnetic layer is located between a portion of the first intermediate portion and the first opposing magnetic layer in the second direction.

[0243] The second non-magnetic layer is located between the other part of the first intermediate portion and the second opposing magnetic layer in the second direction.

[0244] A direction from the second nonmagnetic layer toward the first nonmagnetic layer is along a third direction intersecting a plane including the first direction and the second direction.

[0245] (Technical Solution 11)

[0246] According to the magnetic sensor described in technical solution 10,

[0247] The first magnetic element includes the plurality of first extension portions,

[0248] The plurality of first extending portions are arranged along a third direction intersecting a plane including the first direction and the second direction.

[0249] (Technical Solution 12)

[0250] According to the magnetic sensor described in technical solution 11,

[0251] A direction from one of the first non-magnetic layers of the plurality of first extension portions toward another of the first non-magnetic layers of the plurality of first extension portions is along the third direction.

[0252] (Technical Solution 13)

[0253] According to the magnetic sensor described in technical solution 11 or 12,

[0254] The first magnetic element further includes a first connecting component,

[0255] The first connection member electrically connects one of the second opposing magnetic layers of the plurality of first extension portions and the other of the first opposing magnetic layers of the plurality of first extension portions.

[0256] (Technical Solution 14)

[0257] The magnetic sensor according to any one of technical solutions 1 to 13,

[0258] The first sensor unit further includes another first opposing magnetic component,

[0259] The first opposing magnetic component is located between the first magnetic component and the other first opposing magnetic component in the first direction.

[0260] The first extension portion further includes a second opposing magnetic layer and a second non-magnetic layer.

[0261] The first magnetic layer further includes a second opposing portion and a second intermediate portion.

[0262] The first opposing portion is located between the first portion and the second opposing portion in the first direction,

[0263] The second intermediate portion is located between the first opposing portion and the second opposing portion.

[0264] The second non-magnetic layer is located between at least a portion of the second intermediate portion and the second opposing magnetic layer in the second direction.

[0265] (Technical Solution 15)

[0266] According to the magnetic sensor described in technical solution 14,

[0267] The first magnetic element includes the plurality of first extension portions and a first connecting member.

[0268] The plurality of first extension portions are arranged along a third direction intersecting a plane including the first direction and the second direction.

[0269] The first connection member electrically connects one of the second opposing magnetic layers of the plurality of first extension portions and the other of the second opposing magnetic layers of the plurality of first extension portions.

[0270] (Technical Solution 16)

[0271] The magnetic sensor according to any one of claims 1 to 9 further comprises:

[0272] a second sensor portion including a second magnetic element;

[0273] a third sensor portion including a third magnetic element;

[0274] a fourth sensor portion including a fourth magnetic element; and

[0275] Component current circuit,

[0276] One end of the first magnetic element is electrically connected to one end of the third magnetic element,

[0277] The other end of the first magnetic element is electrically connected to one end of the second magnetic element.

[0278] The other end of the third magnetic element is electrically connected to one end of the fourth magnetic element.

[0279] The other end of the second magnetic element is electrically connected to the other end of the fourth magnetic element.

[0280] The element current circuit can supply element current between a first connection point and a second connection point, wherein the first connection point is a connection point between one end of the first magnetic element and one end of the third magnetic element, and the second connection point is a connection point between the other end of the second magnetic element and the other end of the fourth magnetic element.

[0281] (Technical Solution 17)

[0282] According to the magnetic sensor described in technical solution 16,

[0283] It also has a detection circuit.

[0284] The detection circuit is capable of detecting changes in potential between a third connection point and a fourth connection point, wherein the third connection point is the connection point between the other end of the first magnetic element and the one end of the second magnetic element, and the fourth connection point is the connection point between the other end of the third magnetic element and the one end of the fourth magnetic element.

[0285] (Technical Solution 18)

[0286] According to the magnetic sensor described in technical solution 16 or 17,

[0287] further comprising a first current circuit,

[0288] The first sensor unit includes a first conductive member.

[0289] At least a portion of the first conductive member overlaps with a region between the first magnetic member and the first opposing magnetic member in the second direction.

[0290] The second sensor unit includes a second magnetic member, a second opposing magnetic member, and a second conductive member.

[0291] At least a portion of the second conductive member overlaps with a region between the second magnetic member and the second opposing magnetic member in the second direction.

[0292] The third sensor unit includes a third magnetic member, a third opposing magnetic member, and a third conductive member.

[0293] At least a portion of the third conductive member overlaps with a region between the third magnetic member and the third opposing magnetic member in the second direction.

[0294] The fourth sensor unit includes a fourth magnetic member, a fourth opposing magnetic member, and a fourth conductive member.

[0295] At least a portion of the fourth conductive member overlaps with a region between the fourth magnetic member and the fourth opposing magnetic member in the second direction.

[0296] One end of the first conductive component is electrically connected to one end of the third conductive component.

[0297] The other end of the first conductive component is electrically connected to one end of the second conductive component.

[0298] The other end of the third conductive component is electrically connected to one end of the fourth conductive component.

[0299] The other end of the second conductive component is electrically connected to the other end of the fourth conductive component.

[0300] The first current circuit is capable of supplying a first current including an AC component between a fifth connection point and a sixth connection point, wherein the fifth connection point is a connection point between the other end of the first conductive component and the one end of the second conductive component, and the sixth connection point is a connection point between the other end of the third conductive component and the one end of the fourth conductive component.

[0301] (Technical Solution 19)

[0302] The magnetic sensor according to any one of technical solutions 16 to 18,

[0303] The second sensor unit includes:

[0304] a second magnetic component; and

[0305] a second opposing magnetic member, wherein a direction from the second magnetic member toward the second opposing magnetic member is along the first direction,

[0306] The second magnetic element includes one or more second extension portions,

[0307] The second extension portion includes a second magnetic layer, a second opposing magnetic layer, and a second non-magnetic layer.

[0308] The second magnetic layer includes a second portion, a second opposing portion, and a second intermediate portion.

[0309] A direction from the second portion toward the second opposing portion is along the second direction,

[0310] The second intermediate portion is located between the second portion and the second opposing portion.

[0311] The second non-magnetic layer is located between at least a portion of the second intermediate portion and the second opposing magnetic layer in the second direction.

[0312] The third sensor unit includes:

[0313] a third magnetic component; and

[0314] a third opposing magnetic member, wherein a direction from the third magnetic member toward the third opposing magnetic member is along the first direction,

[0315] The third magnetic element includes one or more third extension parts,

[0316] The third extension portion includes a third magnetic layer, a third opposing magnetic layer and a third non-magnetic layer.

[0317] The third magnetic layer includes a third portion, a third opposing portion, and a third middle portion.

[0318] A direction from the third portion toward the third opposing portion is along the second direction,

[0319] The third intermediate portion is located between the third portion and the third opposing portion.

[0320] The third non-magnetic layer is located between at least a portion of the third intermediate portion and the third opposing magnetic layer in the second direction.

[0321] The fourth sensor unit includes:

[0322] A fourth magnetic component; and

[0323] a fourth opposing magnetic member, wherein a direction from the fourth magnetic member toward the fourth opposing magnetic member is along the first direction,

[0324] The fourth magnetic element includes one or more fourth extensions,

[0325] The fourth extension portion includes a fourth magnetic layer, a fourth opposing magnetic layer, and a fourth non-magnetic layer.

[0326] The fourth magnetic layer includes a fourth portion, a fourth opposing portion, and a fourth middle portion.

[0327] A direction from the fourth portion toward the fourth opposing portion is along the second direction,

[0328] The fourth intermediate portion is located between the fourth portion and the fourth opposing portion,

[0329] The fourth nonmagnetic layer is located between at least a portion of the fourth intermediate portion and the fourth opposing magnetic layer in the second direction.

[0330] (Technical Solution 20)

[0331] An inspection device comprising:

[0332] The magnetic sensor according to any one of technical solutions 1 to 19; and

[0333] A processing unit is configured to process a signal output from the magnetic sensor.

[0334] According to the embodiment, it is possible to provide a magnetic sensor and an inspection device capable of improving sensitivity.

[0335] In the present application specification, “perpendicular” and “parallel” do not only include strictly perpendicular and strictly parallel, but also include, for example, deviations in the manufacturing process, and substantially perpendicular and substantially parallel are sufficient.

[0336] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific structure of each element of the sensor unit, magnetic element, magnetic layer, non-magnetic layer, magnetic component, circuit, etc. included in the magnetic sensor is included in the scope of the present invention as long as it can be appropriately selected by a person skilled in the art from the known range to implement the present invention in the same manner and obtain the same effect.

[0337] Furthermore, as long as the gist of the present invention is included, any solution obtained by combining two or more elements of each specific example within a technically feasible range is also included in the scope of the present invention.

[0338] Furthermore, all magnetic sensors and testing devices that can be implemented by those skilled in the art by appropriately modifying the designs of the magnetic sensors and testing devices described above as embodiments of the present invention also fall within the scope of the present invention as long as the spirit of the present invention is included.

[0339] Furthermore, it should be understood that within the scope of the present invention, those skilled in the art can conceive of various changes and modifications, and those changes and modifications also belong to the scope of the present invention.

[0340] Several embodiments of the present invention have been described above, but these embodiments are provided as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and their variations are included in the scope and purpose of the invention, and are included in the invention described in the claims and their equivalents.

Claims

1. A magnetic sensor comprising: The first sensor unit includes: A first magnetic component; a first opposing magnetic member, a direction from the first magnetic member toward the first opposing magnetic member along a first direction; and a first magnetic element, comprising one or more first extensions, a second sensor portion including a second magnetic element; a third sensor portion including a third magnetic element; a fourth sensor portion including a fourth magnetic element; Component current circuit; as well as The first current circuit, The first extension portion includes a first magnetic layer, a first opposing magnetic layer, and a first non-magnetic layer. The first magnetic layer includes a first portion, a first opposing portion, and a first intermediate portion. A direction from the first portion toward the first opposing portion is along the first direction, The first intermediate portion is located between the first portion and the first opposing portion, The first non-magnetic layer is located between at least a portion of the first intermediate portion and the first opposing magnetic layer in a second direction perpendicular to the first direction. One end of the first magnetic element is electrically connected to one end of the third magnetic element, The other end of the first magnetic element is electrically connected to one end of the second magnetic element. The other end of the third magnetic element is electrically connected to one end of the fourth magnetic element. The other end of the second magnetic element is electrically connected to the other end of the fourth magnetic element. The element current circuit can supply element current between a first connection point and a second connection point, wherein the first connection point is a connection point between the one end of the first magnetic element and the one end of the third magnetic element, and the second connection point is a connection point between the other end of the second magnetic element and the other end of the fourth magnetic element. The first sensor unit includes a first conductive member, At least a portion of the first conductive member overlaps with a region between the first magnetic member and the first opposing magnetic member in the second direction. The second sensor unit includes a second magnetic member, a second opposing magnetic member, and a second conductive member. At least a portion of the second conductive member overlaps with a region between the second magnetic member and the second opposing magnetic member in the second direction. The third sensor unit includes a third magnetic member, a third opposing magnetic member, and a third conductive member. At least a portion of the third conductive member overlaps with a region between the third magnetic member and the third opposing magnetic member in the second direction. The fourth sensor unit includes a fourth magnetic member, a fourth opposing magnetic member, and a fourth conductive member. At least a portion of the fourth conductive member overlaps with a region between the fourth magnetic member and the fourth opposing magnetic member in the second direction. One end of the first conductive component is electrically connected to one end of the third conductive component. The other end of the first conductive component is electrically connected to one end of the second conductive component. The other end of the third conductive component is electrically connected to one end of the fourth conductive component. The other end of the second conductive component is electrically connected to the other end of the fourth conductive component. The first current circuit is capable of supplying a first current including an AC component between a fifth connection point and a sixth connection point, wherein the fifth connection point is a connection point between the other end of the first conductive component and the one end of the second conductive component, and the sixth connection point is a connection point between the other end of the third conductive component and the one end of the fourth conductive component.

2. The magnetic sensor according to claim 1, The resistance of the first magnetic element has an even function characteristic with respect to a magnetic field applied to the first magnetic element.

3. An inspection device comprising: The magnetic sensor according to claim 1 or 2; and a processing unit capable of processing a signal output from the magnetic sensor, The inspection object is inspected by detecting a magnetic field from the inspection object using the magnetic sensor.

Images