semiconductor process equipment

Abstract

The present invention discloses a semiconductor process equipment, including a reaction chamber, a preparation chamber, a wafer carrying device and a driving mechanism, wherein: a carrying body is used to carry a wafer, the carrying body is movably arranged in the preparation chamber, the driving mechanism is arranged in the preparation chamber, the driving mechanism is connected to the carrying body to drive the carrying body to move between the reaction chamber and the preparation chamber, and the heating component and the gas source component are both connected to the carrying body; in the process of the carrying body carrying the wafer to move between the reaction chamber and the preparation chamber, the gas source group is used to blow gas to the surface of the wafer, and the heating component is used to heat the wafer and the gas so that the temperature of the wafer is within a first preset temperature range. The above scheme can solve the problem that when the wafer moves between the reaction chamber and the preparation chamber, the wafer deforms, produces lattice defects such as scratches or dislocation slips due to the sudden change in wafer temperature, thereby affecting the performance of the wafer after processing.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to semiconductor process equipment. Background Art

[0002] A wafer is a silicon wafer used in the manufacture of silicon semiconductor integrated circuits. Various circuit component structures can be fabricated on the wafer. With the development of the integrated circuit manufacturing industry and the increasing integration density of integrated circuits, the wafer process specifications are also becoming increasingly demanding.

[0003] Semiconductor process equipment is the main place where wafers are processed. In related technologies, semiconductor process equipment includes a reaction chamber, a preparation chamber, and a wafer carrier. In some process steps, the wafer needs to be moved from the preparation chamber to the reaction chamber for processing. The process preparation temperature of the reaction chamber is usually in a high temperature environment (for example, 600-800°C), while the preparation chamber is generally at room temperature. When the semiconductor process equipment moves the wafer from a preparation chamber at room temperature to a reaction chamber at a high temperature, or moves the wafer from a reaction chamber at a high temperature to a preparation chamber at room temperature, the temperature of the wafer will change suddenly, causing a large thermal stress on the wafer, which will cause the wafer to deform, produce lattice defects such as scratches or dislocation slip, thereby affecting the performance of the wafer after processing. Summary of the Invention

[0004] The present invention discloses a semiconductor process equipment to solve the problem that when a wafer moves between a reaction chamber and a preparation chamber, the wafer may be deformed, have scratches or lattice defects such as dislocation slip due to a sudden change in temperature, thereby affecting the performance of the wafer after processing.

[0005] In order to solve the above-mentioned technical problems, the present invention is achieved as follows:

[0006] The present application discloses a semiconductor process equipment, comprising a reaction chamber, a preparation chamber, a wafer carrying device and a drive mechanism, wherein:

[0007] The wafer carrying device includes a carrying body, a heating assembly, and an air source assembly. The carrying body is used to carry the wafer and is movably disposed in the preparation chamber. The driving mechanism is disposed in the preparation chamber and is connected to the carrying body to drive the carrying body to move between the reaction chamber and the preparation chamber. The heating assembly and the air source assembly are both connected to the carrying body.

[0008] During the process of the carrier body carrying the wafer to move between the reaction chamber and the preparation chamber, the gas source group is used to blow gas to the surface of the wafer, and the heating component is used to heat the wafer and the gas so that the temperature of the wafer is within a first preset temperature range.

[0009] The technical solution adopted by the present invention can achieve the following technical effects:

[0010] The present application configures a wafer carrying assembly to include a carrying body, a heating assembly, and a gas source assembly, wherein the carrying body is movably arranged in the preparation chamber, so that a driving mechanism can drive the carrying body to carry the wafer to move between the reaction chamber and the preparation chamber, thereby enabling the gas source assembly to blow gas to the surface of the wafer and the heating assembly to heat the wafer and the gas during the process of the carrying body carrying the wafer to move between the reaction chamber and the preparation chamber. During the process of the carrier body carrying the wafer to move between the reaction chamber and the preparation chamber, the temperature of the wafer is controlled within a first preset temperature range. This allows the temperature of the wafer to be controlled within a temperature range between the temperature of the reaction chamber and the temperature of the preparation chamber, namely the first preset temperature range, thereby effectively avoiding the problem of sudden temperature changes of the wafer when the wafer moves between the reaction chamber and the preparation chamber, and further avoiding wafer deformation, scratches, dislocation slip and other lattice defects caused by sudden temperature changes, thereby effectively improving the performance of the wafer after processing. At the same time, compared with the method of lowering the temperature of the reaction chamber before the wafer enters the reaction chamber or leaves the reaction chamber and heating the temperature in the reaction chamber after the wafer enters the reaction chamber to avoid sudden temperature changes of the wafer, the present application no longer frequently heats and lowers the temperature of the reaction chamber, thereby improving the process efficiency of semiconductor process equipment for wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 A schematic diagram of the structure of a semiconductor process equipment disclosed in an embodiment of the present invention;

[0012] Figure 2 A schematic structural diagram of a wafer carrying device disclosed in an embodiment of the present invention;

[0013] Figure 3 This is a schematic structural diagram of the first support plate disclosed in an embodiment of the present invention.

[0014] Description of reference numerals:

[0015] 100-reaction chamber,

[0016] 200-Prepare chamber,

[0017] 300-wafer carrier,

[0018] 310-carrying body, 311-card slot, 312-air inlet channel, 313-air blowing channel, 314-first support plate, 314a-diversion channel,

[0019] 315-second support plate, 316-bearing column, 317-process door, 318-partition, 319-insulation, 320-heating assembly, 321-heating belt, 322-heating lead,

[0020] 330-air source assembly, 331-air intake pipe,

[0021] 400-driving mechanism, 410-lifting base, 420-lifting part, 430-flexible protective pipe,

[0022] 500-heating furnace body,

[0023] 600-Controller. DETAILED DESCRIPTION

[0024] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0025] The technical solutions disclosed in various embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0026] Please refer to Figures 1 to 3 The present invention discloses a semiconductor processing apparatus, which may be a vertical heat treatment furnace used for batch processing of wafers. The apparatus includes a reaction chamber 100, a preparation chamber 200, a wafer carrier 300, and a drive mechanism 400.

[0027] The reaction chamber 100 is the primary location for wafer processing. During process preparation, the interior of the reaction chamber 100 reaches a high temperature, typically reaching 600 to 800 degrees Celsius. The reaction chamber 100 may include an inlet and an outlet. Reactive gases, used to regulate the reaction chamber 100 environment, enter through the inlet and exit through the outlet.

[0028] The preparation chamber 200 is a place for preparing wafers before and after the process, such as the preparation process before entering the reaction chamber 100, the cooling process after the process, etc. The preparation chamber 200 is usually at room temperature, but it can also be at other environmental conditions.

[0029] The wafer carrier 300 is used to carry wafers and perform heating, purging, and other treatments on the wafers. The wafer carrier 300 includes a carrier body 310, a heating assembly 320, and a gas source assembly 330. The carrier body 310 is used to carry wafers and is movably disposed in the preparation chamber 200. A drive mechanism 400 is disposed in the preparation chamber 200 and is connected to the carrier body 310 to drive the carrier body 310 to move between the reaction chamber 100 and the preparation chamber 200. The heating assembly 320 and the gas source assembly 330 are both connected to the carrier body 310 and are disposed adjacent to each other.

[0030] The carrier body 310 carries the wafer and moves relatively slowly between the reaction chamber 100 and the preparation chamber 200, usually between 50 mm / min and 100 mm / min. The temperature difference between the reaction chamber 100 and the preparation chamber 200 is large. If the carrier body 310 directly moves the wafer from the reaction chamber 100 to the preparation chamber 200, or from the preparation chamber 200 to the reaction chamber 100, the wafer will generate large thermal stress due to the sudden temperature change, causing the wafer to deform, produce scars or lattice defects such as dislocation slip, thereby damaging the wafer and affecting the performance of the wafer after processing. In the related art, in order to prevent the wafer from changing temperature suddenly during the movement between the reaction chamber 100 and the preparation chamber 200, thereby preventing the wafer from deforming, producing scratches, or lattice defects such as dislocation slip, it is necessary to first lower the temperature of the reaction chamber 100 and then move the wafer between the reaction chamber and the preparation chamber. If the wafer needs to be processed continuously, the reaction chamber 100 needs to be frequently heated and cooled, thereby reducing the process efficiency of the wafer.

[0031] In order to avoid such sudden temperature changes causing deformation of the wafer, lattice defects such as scratches or dislocation slip, and the problem of low process efficiency of the wafer due to frequent heating and cooling of the reaction chamber 100, the present application uses the carrier body 310 to carry the wafer between the reaction chamber 100 and the preparation chamber 200. During this process, the gas source component 330 is used to blow gas to the surface of the wafer, and the heating component 320 is used to heat the wafer and the gas so that the temperature of the wafer is within a first preset temperature range. The first preset temperature range is a temperature range between the temperature of the reaction chamber 100 and the temperature of the preparation chamber 200. For example, the temperature of the reaction chamber is 800 degrees Celsius and the temperature of the preparation chamber is 30 degrees Celsius. The first preset temperature range can be in the range of 300-400 degrees Celsius. This is just one implementation method. The first preset temperature range can be set according to actual needs. During the process of moving the wafer from the preparation chamber 200 to the reaction chamber 100, or during the process of moving the wafer from the reaction chamber 100 to the preparation chamber 200, the heating component 320 and the gas source component 330 heat the wafer to a first preset temperature range, so that during the process of moving the wafer between the reaction chamber 100 and the preparation chamber 200, the temperature of the wafer is controlled within the first preset temperature range, thereby avoiding the problem of deformation, scratches or lattice defects such as dislocation slip of the wafer caused by sudden changes in the wafer temperature when the wafer moves between the reaction chamber 100 and the preparation chamber 200.

[0032] The heating assembly 320 and the gas source assembly 330 are both connected to the carrier body 310. The heating assembly 320 can be a heating lamp, a heating wire, an electromagnetic heating device, etc. The gas source assembly 330 can blow air directly onto the wafer surface through a nozzle, or it can be connected to the air outlet of the carrier body 310 through a gas pipeline and then blow gas onto the wafer surface through the air outlet. The heating assembly 320 can heat the carrier body 310 so that the carrier body 310 heats the wafer. The heating assembly 320 can also directly heat the wafer surface through thermal radiation. The heating assembly 320 can also heat the gas blown onto the wafer surface so that the heated gas heats the wafer, thereby allowing the heated gas to be blown onto the wafer surface to heat the wafer more evenly. When the heating assembly 320 heats the wafer, it can heat the gas at the same time, or it can only heat the wafer without heating the gas. The blown gas can be simply used to purge the surface of the wafer. Here, the heating of the wafer and gas can be performed according to actual conditions. The heating component 320 and the gas source component 330 are arranged on the carrier body 310, so that the heating component 320 and the gas source component 330 can move together with the carrier body 310, so that the wafer can also be heated and purged in the process of the carrier body carrying the wafer to move. Since the wafer is carried on the carrier body 310, the position of the heating component 320 and the gas source component 330 for heating and purging the wafer is always relatively fixed in the process of the carrier body 310 carrying the wafer to move, so that the heating and purging of the wafer are more stable.

[0033] In some cases, the heating assembly 320 and the gas source assembly 330 may not be connected to the carrier body 310. The heating assembly 320 may heat the wafers by heat radiation, and the gas source assembly 330 may directly blow gas onto the wafer surface through the gas nozzle. In this case, the heating assembly 320 and the gas source assembly 330 may be disposed on the preparation chamber 200.

[0034] The present application sets the wafer carrying assembly as a structure including a carrying body 310, a heating assembly 320 and a gas source assembly 330. The carrying body 310 is movably arranged in the preparation chamber 200, so that the driving mechanism 400 can drive the carrying body 310 to carry the wafer to move between the reaction chamber 100 and the preparation chamber 200, so that when the carrying body 310 carries the wafer to move between the reaction chamber 100 and the preparation chamber 200, the gas source assembly 330 blows gas to the surface of the wafer, and the heating assembly 320 heats the wafer and the gas, so that the temperature of the wafer is within a first preset temperature range. In the process of the carrier body 310 carrying the wafer and moving between the reaction chamber 100 and the preparation chamber 200, the temperature of the wafer is controlled within the first preset temperature range, so that in the process of the wafer moving between the reaction chamber 100 and the preparation chamber 200, the temperature of the wafer is controlled within a temperature range between the temperature of the reaction chamber 100 and the temperature of the preparation chamber 200, that is, the first preset temperature range, thereby effectively avoiding the problem of the wafer temperature suddenly changing when the wafer moves between the reaction chamber 100 and the preparation chamber 200, thereby avoiding Due to the sudden temperature change, the wafer is deformed, scratched or has lattice defects such as dislocation slip, thereby effectively improving the performance of the wafer after processing. At the same time, compared with the related art that adopts the method of lowering the temperature of the reaction chamber 100 before the wafer enters the reaction chamber 100 or before leaving the reaction chamber 100, and then heating the temperature in the reaction chamber 100 after the wafer enters the reaction chamber 100 to avoid sudden temperature changes of the wafer, the present application no longer frequently raises and lowers the temperature of the reaction chamber 100, thereby improving the process efficiency of the semiconductor process equipment for the wafer.

[0035] In a specific implementation process, the semiconductor process equipment further includes a controller 600 , and the heating component 320 and the gas source component 330 are both connected to the controller 600 . The controller 600 is used to control the heating of the heating component 320 and the blowing of gas by the gas source component 330 .

[0036] In an optional embodiment, the carrier body 310 may be provided with a plurality of spaced slots 311. An air inlet channel 312 may be provided within the carrier body 310. The bottom walls of each of the slots 311 may be provided with a blow channel 313 connected to the air inlet channel 312. At least some of the slots 311 are used to support wafers, and the first sidewalls of the slots 311 are used to support the edges of the wafers. An air source assembly 330 is connected to the air inlet channel 312 and can blow air toward the surface of the wafer via the air inlet channel 312 and the blow channel 313.

[0037] The slot 311 defined in the carrier body 310 can be an arc-shaped groove circumferentially circumscribing the central axis of the carrier body 310, or a circular groove, with the opening of the groove directed toward the central axis. When the carrier body 310 is supporting a wafer, the first sidewall of the slot rests on the edge of the wafer. The first sidewall is the sidewall that directly supports the wafer when the carrier body 310 is supporting the wafer.

[0038] By providing a plurality of slots 311 spaced apart on the carrier body 310, an air inlet channel 312 is provided within the carrier body 310, and the bottom walls of the plurality of slots 311 are provided with air blowing channels 313 connected to the air inlet channels 312, the gas source assembly 330 can be connected to the air inlet channels 312, and gas can be blown toward the surface of the wafer through the air inlet channels 312 and the air blowing channels 313. Since the first sidewalls of the slots 311 are used to support the edge of the wafer, by providing air blowing channels 313 connected to the air inlet channels 312 on the bottom walls of the plurality of slots 311, the gas blown out of the air blowing channels 313 can be blown toward the surface of the wafer. The provision of the slots 311, the air inlet channels 312, and the air blowing channels 313 on the carrier body 310 defines the path for blowing gas toward the wafer surface, thereby making heating and purging of the wafer surface more stable and also facilitating improved heating efficiency. Furthermore, the structure of the slot 311, air inlet channel 312, and air blowing channel 313 on the carrier body 310 eliminates the need for additional components to blow air onto the wafer surface, thereby making the overall structure of the wafer carrier 300 more compact. Furthermore, in this case, the carrier body 310 not only performs a load-bearing function but also assists the heating assembly 320 in heating, which undoubtedly helps simplify the structure of the semiconductor processing equipment.

[0039] Furthermore, the plurality of slots 311 may be spaced apart along the first direction, and the heating assembly 320 may include a heating belt 321. The heating belt 321 may be laid along the first direction on the carrier body 310. The heating belt 321 may heat the wafer and the gas within the gas inlet channel 312 through the carrier body 310. The heating belt 321 may be located on a side away from the slots 311, or may be located inside the carrier body 310.

[0040] By setting the heating component 320 as a heating belt 321, the heating belt 321 can be laid on the carrier body 310 along the first direction. Since multiple slots 311 are arranged at intervals along the first direction, the heating belt 321 can evenly heat the wafers in different slots 311, so that the heating belt 321 can heat the wafers in multiple slots 311 of the carrier body 310 more evenly.

[0041] In a very optional embodiment, the supporting body 310 may include a first support plate 314, a second support plate 315 and a plurality of supporting columns 316, the first support plate 314 has a first plate surface, the second support plate 315 has a second plate surface, the first plate surface and the second plate surface are arranged opposite to each other, the first ends of the plurality of supporting columns 316 are connected to the first plate surface, the second ends of the plurality of supporting columns 316 are connected to the second plate surface, and the plurality of supporting columns 316 are arranged in parallel and at intervals, and the first direction is consistent with the extension direction of the supporting columns 316. Each supporting column 316 is provided with a plurality of slots 311 spaced apart along the first direction, the slots 311 between the plurality of supporting columns 316 are arranged in one-to-one correspondence, the slots 311 correspondingly arranged between the plurality of supporting columns 316 jointly support the wafer, an air intake channel 312 is provided inside each supporting column 316, a blowing channel 313 connected to the air intake channel 312 is provided on the bottom wall of the plurality of slots 311 of each supporting column 316, and a heating belt 321 is laid along the first direction on the plurality of supporting columns 316.

[0042] By setting the carrying body 310 as a first support plate 314, a second support plate 315 and a plurality of carrying columns 316, the first plate surface of the first support plate 314 is arranged opposite to the second plate surface of the second support plate 315, the first ends of the plurality of carrying columns 316 are connected to the first plate surface, the second ends of the plurality of carrying columns 316 are connected to the second plate surface, and the plurality of carrying columns 316 are arranged in parallel and at intervals, and the first direction is consistent with the extension direction of the carrying columns 316, so that there are intervals between the carrying columns 316, and the plurality of intervals are equivalent to weight-reducing spaces, so that the overall weight of the carrying body 310 can be reduced, thereby reducing the energy consumption of the carrying body 310 when transmitting wafers.

[0043] Preferably, the first support plate 314 may have a plurality of diverter channels 314a defined therein. These channels 314a are in one-to-one communication with the air inlet channels 312 on the support columns 316. The air source assembly 330 is in communication with the diverter channels 314a. The heating assembly 320 may further include a plurality of heating wires 322, which may pass through the diverter channels 314a and connect to the heating belt 321. During the movement of the support body 310 toward the reaction chamber 100, the first support plate 314 may be located on the side of the second support plate 315 facing away from the reaction chamber 100.

[0044] By opening a plurality of diversion channels 314a on the first support plate 314, the plurality of diversion channels 314a can be connected one-to-one with the air inlet channels 312 on the plurality of supporting columns 316, so that the plurality of diversion channels 314a can not only transport gas to the plurality of air inlet channels 312 respectively, but also provide a laying channel for the heating lead 322, thereby protecting the heating lead 322.

[0045] In an optional embodiment, the carrier body 310 may include a wafer carrier, an insulation portion, and a process door 317. The wafer carrier is connected to the insulation portion and separated by a partition 318. The insulation may be insulation cotton, an insulation board, or the like. Both the wafer carrier and the insulation portion are provided with a slot 311. The process door 317 is connected to the insulation portion and is located at the end of the insulation portion facing away from the wafer carrier. The slot 311 on the wafer carrier is used to support the wafer, and the slot 311 on the insulation portion is used to install an insulation member 319, which may be an insulation board, insulation cotton, or the like. The reaction chamber 100 may include a chamber body and a furnace door. The chamber body is provided with a transfer port, which is movably connected to the chamber body. The furnace door can switch between a sealed transfer port and a circumvented transfer port. In a first state, the furnace door seals the transfer port, and the carrier body 310 is located within the preparation chamber 200. In the second state, the furnace door clears the transfer port, and the wafer carrier and thermal insulation unit sequentially enter the reaction chamber 100 from the preparation chamber 200 through the transfer port. The process door 317 seals the transfer port. In the first state, the reaction chamber 100 may be in a preheating state. The second state may be the state where wafers are placed in the reaction chamber 100 and undergo processing.

[0046] By configuring the carrier body 310 to include a wafer carrier, a heat insulating portion, and a process door 317, the wafer carrier is connected to the heat insulating portion and separated by a partition 318, and the process door 317 is connected to the heat insulating portion and is located at the end of the heat insulating portion facing away from the wafer carrier. In the second state, the temperature inside the wafer carrier and the reaction chamber 100 is reduced by the heat-resistance effect of the heat insulating portion, reducing the heat loss from the process door 317 to the outside of the reaction chamber 100, thereby ensuring the stability of the environment of the reaction chamber 100. By providing a slot 311 in both the wafer carrier and the heat insulating portion, the wafer is carried on the slot 311 of the wafer carrier, and the heat insulating member 319 is installed on the slot 311 of the heat insulating portion, so that the wafer and the heat insulating member 319 are located in different areas, respectively, so that the heat insulating portion can better achieve heat insulation performance.

[0047] In some embodiments, the heating assembly 320 includes a heating lead 322, and the air source assembly 330 includes an air inlet line 331. Both the heating lead 322 and the air inlet line 331 are connected to the carrier body 310. When the carrier body 310 is raised or lowered, the connection between the heating lead 322 and the air inlet line 331 and the carrier body 310 may bend and deform as the carrier body 310 moves. Prolonged bending and deformation of the heating lead 322 and the air inlet line 331 may cause damage and failure to the heating lead 322 and the air inlet line 331. To address the above issues, preferably, the heating assembly 320 includes a heating lead 322, and the air source assembly 330 includes an air inlet line 331. Both the heating lead 322 and the air inlet line 331 are connected to the carrier body 310. The drive mechanism 400 may include a lifting device, which may include a lifting base 410, a lifting unit 420, and a flexible protective conduit 430. The lifting base 410 may be disposed within the preparation chamber 200. The lifting unit 420 is movably disposed on the lifting base 410 and can be raised and lowered along the lifting base 410. The lifting unit 420 is connected to the carrier body 310 and can drive the carrier body 310 up and down to move the carrier body 310 between the reaction chamber 100 and the preparation chamber 200. One end of the flexible protective conduit 430 is connected to the carrier body 310, and the other end of the flexible protective conduit 430 is fixedly connected to the lifting base 410. As the carrier body 310 is raised and lowered, the flexible protective conduit 430 is driven to bend. The heating wire 322 and the air inlet line 331 both pass through the flexible protective conduit 430 and can bend along with the flexible protective conduit 430. The bending movement means that the flexible protective pipe 430 , the heating lead 322 and the air intake pipe 331 are all adaptively deformed according to the change in the height of the supporting body 310 .

[0048] By configuring the lifting device to include a lifting base 410, a lifting portion 420, and a flexible protective conduit 430, the lifting portion 420 can be raised and lowered along the lifting base 410, thereby enabling the lifting portion 420 to drive the carrier body 310 to rise and fall, thereby enabling the carrier body 310 to move between the reaction chamber 100 and the preparation chamber 200. By providing the flexible protective conduit 430, one end of the flexible protective conduit 430 is connected to the carrier body 310, and the other end of the flexible protective conduit 430 is fixedly connected to the lifting base 410, so that the heating lead 322 and the air intake conduit 331 can pass through the flexible protective conduit 430 and connect to the carrier body 310. Therefore, the lifting and lowering of the carrier body 310 can drive the flexible protective conduit 430 to bend. The heating lead 322 and the air intake conduit 331 both pass through the flexible protective conduit 430 and can bend along with the flexible protective conduit 430, thereby effectively protecting the heating lead 322 and the air intake conduit 331.

[0049] In an optional embodiment, before the carrier body 310 carries the wafer and moves it from the preparation chamber 200 to the reaction chamber 100, the gas source assembly 330 is used to blow gas onto the surface of the wafer, and the heating assembly 320 is used to heat the wafer and the gas so that the temperature of the wafer is within a second preset temperature range, wherein the maximum value of the second preset temperature range is less than the minimum value of the first preset temperature range. The second preset temperature range can be a temperature range between the minimum value of the first preset temperature range and room temperature.

[0050] Before the carrier body 310 carries the wafer and moves it from the preparation chamber 200 to the reaction chamber 100, the gas source component 330 blows gas to the surface of the wafer, and the heating component 320 heats the wafer and the gas, so that the temperature of the wafer is within the second preset temperature range, thereby preheating the wafer to the second preset temperature range before heating it to the first preset temperature range, thereby preventing the wafer from being deformed, or causing lattice defects such as scratches or dislocation slips due to large changes in wafer temperature when it is directly heated to the first preset temperature range.

[0051] In an optional implementation, after the carrier body 310 carries the wafer and moves from the reaction chamber 100 to the preparation chamber 200, the gas source assembly 330 is used to blow gas onto the surface of the wafer to keep the temperature of the wafer within a third preset temperature range, wherein the maximum value of the third preset temperature range is less than the minimum value of the first preset temperature range. The third preset temperature range can be a temperature range between the minimum value of the first preset temperature range and room temperature.

[0052] After the carrier body 310 carries the wafer and moves from the reaction chamber 100 to the preparation chamber 200, the gas source assembly 330 blows gas onto the surface of the wafer, so that the wafer is heated to a third preset temperature range before being cooled from the first preset temperature range to room temperature. This can prevent the wafer from being directly cooled from the first preset temperature range to a lower temperature, which may cause the wafer to deform, or produce lattice defects such as scratches or dislocation slip.

[0053] In an optional embodiment, the semiconductor process equipment further includes a heating furnace body 500, which is disposed over the reaction chamber 100 to heat the reaction chamber 100. In an application scenario where the reaction chamber 100 includes a chamber body and a furnace door, the heating furnace body 500 is disposed over the chamber body, and the furnace door is movably connected to the chamber body and located outside the heating furnace body 500.

[0054] The present application discloses a control method for semiconductor process equipment. The disclosed semiconductor process equipment is the semiconductor process equipment disclosed in the above embodiment. The control method includes:

[0055] During the process of the carrier body 310 carrying the wafer and moving between the reaction chamber 100 and the preparation chamber 200, the gas source component 330 is controlled to blow gas toward the surface of the wafer, and the heating component 320 is controlled to heat the wafer and the gas so that the temperature of the wafer is within the first preset temperature range.

[0056] Optionally, before the carrier body 310 carries the wafer and moves from the preparation chamber 200 to the reaction chamber 100, the control method further includes:

[0057] The gas source component 330 is controlled to blow gas toward the surface of the wafer, and the heating component 320 is controlled to heat the wafer and the gas so that the temperature of the wafer is within a second preset temperature range, wherein the maximum value of the second preset temperature range is less than the minimum value of the first preset temperature range.

[0058] Optionally, after the carrier body 310 carries the wafer and moves from the reaction chamber 100 to the preparation chamber 200, the control method further includes:

[0059] The gas source assembly 330 is controlled to blow gas toward the surface of the wafer so that the temperature of the wafer is within a third preset temperature range, wherein the maximum value of the third preset temperature range is less than the minimum value of the first preset temperature range.

[0060] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0061] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are protected by the present invention.

Claims

1. A semiconductor process equipment, characterized in that: The invention comprises a reaction chamber (100), a preparation chamber (200), a wafer carrying device (300) and a driving mechanism (400), wherein: The wafer carrying device (300) comprises a carrying body (310), a heating component (320) and an air source component (330); the carrying body (310) is used for carrying wafers; the carrying body (310) is movably arranged in the preparation chamber (200); the driving mechanism (400) is arranged in the preparation chamber (200); the driving mechanism (400) is connected to the carrying body (310) to drive the carrying body (310) to move between the reaction chamber (100) and the preparation chamber (200); the heating component (320) and the air source component (330) are both connected to the carrying body (310); When the carrier body (310) carries the wafer and moves between the reaction chamber (100) and the preparation chamber (200), the gas source component (330) is used to blow gas toward the surface of the wafer, and the heating component (320) is used to heat the wafer and the gas so that the temperature of the wafer is within a first preset temperature range.

2. The semiconductor process equipment according to claim 1, wherein: The carrier body (310) is provided with a plurality of slots (311) arranged at intervals, an air inlet channel (312) is provided inside the carrier body (310), and bottom walls of the plurality of slots (311) are provided with air blowing channels (313) connected to the air inlet channel (312), at least part of the plurality of slots (311) is used to carry the wafer, and the first side wall of the slot (311) is used to carry the edge of the wafer; The gas source component (330) is in communication with the air inlet channel (312), and the gas source component (330) can blow the gas toward the surface of the wafer through the air inlet channel (312) and the blowing channel (313).

3. The semiconductor process equipment according to claim 2, wherein: The plurality of card slots (311) are spaced apart along a first direction, the heating component (320) comprises a heating belt (321), the heating belt (321) is laid on the carrier body (310) along the first direction, and the heating belt (321) can heat the wafer and the gas in the air inlet channel (312) through the carrier body (310).

4. The semiconductor process equipment according to claim 3, wherein: The bearing body (310) includes a first support plate (314), a second support plate (315) and a plurality of bearing columns (316), wherein the first support plate (314) has a first plate surface, the second support plate (315) has a second plate surface, the first plate surface and the second plate surface are arranged opposite to each other, the first ends of the plurality of bearing columns (316) are connected to the first plate surface, the second ends of the plurality of bearing columns (316) are connected to the second plate surface, and the plurality of bearing columns (316) are arranged in parallel and at intervals, and the first direction is consistent with the extension direction of the bearing columns (316); Each of the supporting columns (316) is provided with a plurality of slots (311) spaced apart along the first direction, the slots (311) between the plurality of supporting columns (316) are arranged in a one-to-one correspondence, the slots (311) correspondingly arranged between the plurality of supporting columns (316) jointly support the wafer, the interior of each of the supporting columns (316) is provided with the air inlet channel (312), the bottom wall of the plurality of slots (311) of each of the supporting columns (316) is provided with the blowing channel (313) connected to the air inlet channel (312), and the plurality of supporting columns (316) are provided with the heating belt (321) along the first direction.

5. The semiconductor process equipment according to claim 4, wherein: A plurality of diversion channels (314a) are provided inside the first support plate (314), and the plurality of diversion channels (314a) are in one-to-one correspondence with the air inlet channels (312) of the plurality of supporting columns (316), and the air source assembly (330) is in communication with the diversion channels (314a); The heating assembly (320) further comprises a plurality of heating leads (322), and the plurality of heating leads (322) pass through the diversion channel (314a) in a one-to-one correspondence and are connected to the heating belt (321).

6. The semiconductor process equipment according to any one of claims 2 and 3, characterized in that: The carrier body (310) comprises a wafer carrier portion, a heat insulating portion and a process door (317); the wafer carrier portion is connected to the heat insulating portion and separated by a separator (318); the wafer carrier portion and the heat insulating portion are both provided with the clamping slot (311); the process door (317) is connected to the heat insulating portion and is located at one end of the heat insulating portion away from the wafer carrier portion; The slot (311) on the wafer carrying portion is used to carry the wafer, and the slot (311) on the heat insulating portion is used to install a heat insulating member (319). The reaction chamber (100) comprises a chamber body and a furnace door. The chamber body is provided with a transmission port, and the furnace door is movably connected to the chamber body. In a first state, the furnace door seals the transfer port, and the carrier body (310) is located in the preparation chamber (200); In the second state, the furnace door avoids the transfer port, the wafer supporting part and the heat insulating part enter the reaction chamber (100) from the preparation chamber (200) through the transfer port in sequence, and the process door (317) seals the transfer port.

7. The semiconductor process equipment according to claim 1, wherein: The heating component (320) includes a heating lead (322), the air source component (330) includes an air intake pipeline (331), and both the heating lead (322) and the air intake pipeline (331) are connected to the carrier body (310); The driving mechanism (400) includes a lifting device, which includes a lifting base (410), a lifting part (420) and a flexible protective pipe (430). The lifting base (410) is arranged in the preparation chamber (200). The lifting part (420) is movably arranged on the lifting base (410) and can be lifted and lowered along the lifting base (410). The lifting part (420) is connected to the supporting body (310). The lifting part (420) can drive the supporting body (310) to lift and lower, so that the supporting body (310) moves between the reaction chamber (100) and the preparation chamber (200). One end of the flexible protective pipe (430) is connected to the bearing body (310), and the other end of the flexible protective pipe (430) is fixedly connected to the lifting base (410). The lifting of the bearing body (310) can drive the flexible protective pipe (430) to perform bending movement. The heating lead (322) and the air intake pipe (331) both pass through the flexible protective pipe (430) and can perform bending movement together with the flexible protective pipe (430).

8. The semiconductor process equipment according to claim 1, wherein: Before the carrier body (310) carries the wafer and moves from the preparation chamber (200) to the reaction chamber (100), the gas source component (330) is used to blow the gas toward the surface of the wafer, and the heating component (320) is used to heat the wafer and the gas so that the temperature of the wafer is within a second preset temperature range, wherein the maximum value of the second preset temperature range is less than the minimum value of the first preset temperature range.

9. The semiconductor process equipment according to claim 1, wherein: After the carrier body (310) carries the wafer and moves from the reaction chamber (100) to the preparation chamber (200), the gas source assembly (330) is used to blow the gas toward the surface of the wafer so that the temperature of the wafer is within a third preset temperature range, wherein the maximum value of the third preset temperature range is less than the minimum value of the first preset temperature range.

10. The semiconductor process equipment according to claim 1, wherein: The semiconductor process equipment further comprises a heating furnace body (500), wherein the heating furnace body (500) is disposed on the reaction chamber (100) to heat the reaction chamber (100).

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