Gallium oxide PIN diode based on P-type diamond oblique terminal and its preparation method

Abstract

The present invention relates to a gallium oxide PIN diode based on a P-type diamond oblique terminal and a preparation method thereof. The gallium oxide PIN diode comprises: + ‑Ga2O3 substrate layer; n ‑ ‑Ga2O3 drift layer, set in n + The upper surface of the ‑Ga2O3 substrate layer, n ‑ The two sides of the Ga2O3 drift layer are inclined terraces with several rectangular grooves on them; the P-type diamond layer covers the n ‑ The upper surface of the ‑Ga2O3 drift layer, part of the inclined terrace and the interior of the rectangular groove filled; the cathode is set at n + The lower surface of the Ga2O3 layer; the anode is arranged on the upper surface of the P-type diamond layer. The gallium oxide PIN diode based on the P-type diamond oblique terminal of the present invention adopts an oblique terminal structure and introduces a rectangular groove on the inclined table surface, thereby increasing the P-type diamond and n-type diamond ‑ The contact area of ​​the Ga2O3 drift layer is reduced, the modulation effect of the pn junction on the electric field is more obvious, the electric field distribution at the edge of the device is more uniform, and the leakage current is reduced; the use of P-type diamond as the P-type region circumvents the difficulty in preparing P-type Ga2O3.

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