Electrostatic chuck assemblies for plasma processing equipment

Abstract

An electrostatic chuck is disclosed, comprising a clamping layer having a first clamping electrode and a second clamping electrode. A first clamping electrode is provided that defines a first clamping region and a second clamping region. The first clamping region and the second clamping region are separated by a first gap and are electrically connected by at least one electrical connector extending across the first gap. The second clamping electrode is disposed radially outward from the first clamping electrode. The second clamping electrode defines a third clamping region and a fourth clamping region separated by a second gap. The third clamping region and the fourth clamping region are electrically connected by at least one electrical connector extending across the second gap. Plasma processing apparatus and systems incorporating an electrostatic chuck are also provided.

Description

Technical Field

[0001] The present disclosure generally relates to a plasma processing apparatus for plasma processing a workpiece, and more particularly, to an electrostatic chuck assembly for a plasma processing apparatus. Background Art

[0002] Various types of process chambers can be used to process different types of workpieces. Workpieces can include, for example, glass sheets, films, bands, solar panels, mirrors, liquid crystal displays, semiconductor wafers, etc. Many different types of process chambers can be used to process semiconductor wafers, for example, in the manufacturing process of integrated circuit chips. Processing chambers can be used to anneal wafers, perform chemical vapor deposition, physical vapor deposition, plasma and chemical etching processes, thermal treatments, surface engineering and other processes. These types of process chambers typically include workpiece supports for holding workpieces in the process chambers.

[0003] In many processes, it is desirable to control certain parameters of a workpiece during processing in order to control uniformity during processing. Although various attempts have been made to design workpiece supports that can control temperature non-uniformity, various deficiencies and shortcomings still exist. Therefore, there is a need for improved workpiece supports and plasma processing apparatus and systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] A detailed discussion of embodiments for those of ordinary skill in the art is set forth in the specification with reference to the accompanying drawings, in which:

[0005] Figure 1 An example processing device according to an example embodiment of the present disclosure is depicted.

[0006] Figure 2 An example workpiece support according to an example embodiment of the present disclosure is depicted.

[0007] Figure 3 An example workpiece support according to an example embodiment of the present disclosure is depicted.

[0008] Figure 4 Depicted is a top view of a clamping layer with two clamping electrodes according to an example embodiment of the present disclosure.

[0009] Figure 5 Depicted is a top view of a heating layer having one or more heating electrodes according to an example embodiment of the present disclosure.

[0010] Figure 6 Depicted is a bottom view of a clamping layer and trace connections according to an example embodiment of the present disclosure.

[0011] Figure 7Depicted is a bottom view of a clamping layer and trace connections according to an example embodiment of the present disclosure.

[0012] Figure 8 Depicted is a bottom view of a clamping layer and trace connections according to an example embodiment of the present disclosure.

[0013] Fig. 9 Depicted is a top view of a thermal control system according to an example embodiment of the present disclosure.

[0014] Fig.10 A portion of a workpiece support is depicted according to an example embodiment of the present disclosure. DETAILED DESCRIPTION

[0015] Embodiments will now be described in detail, one or more examples of which are shown in the accompanying drawings. Each example is provided by way of illustration of the embodiment rather than by way of limitation of the present disclosure. In fact, it will be appreciated by those skilled in the art that various modifications and variations may be made to the embodiments without departing from the scope or spirit of the present disclosure. For example, a feature shown or described as part of one embodiment may be used together with another embodiment to produce yet another embodiment. Therefore, it is intended that aspects of the present disclosure cover such modifications and variations.

[0016] For purposes of illustration and discussion, aspects of the present disclosure are discussed with reference to a "workpiece," "wafer," or semiconductor wafer. One of ordinary skill in the art using the disclosure provided herein will understand that the example aspects of the present disclosure may be used in conjunction with any semiconductor workpiece or other suitable workpiece. Additionally, the term "about" used in conjunction with a numerical value means within ten percent (10%) of the stated numerical value. "Base" refers to any structure that can be used to support a workpiece. "Remote plasma" refers to a plasma generated away from a workpiece (e.g., in a plasma chamber separated from the workpiece by a separation gate). "Direct plasma" refers to a plasma that is directly exposed to a workpiece, such as a plasma generated in a processing chamber having a base operable to support a workpiece.

[0017] As used herein, the term "about" used in conjunction with a stated numerical value may include a range of values ​​within 10% of the stated numerical value.

[0018] Conventional plasma processing equipment includes a workpiece support that may include an electrostatic chuck. Typically, the electrostatic chuck includes one or more electrodes embedded in a ceramic puck. When the electrodes are charged, the difference in electrostatic charge between the electrodes and the workpiece holds the workpiece on the workpiece support. Existing electrostatic chucks include monopolar (e.g., a single electrode) or bipolar (e.g., two electrodes) designs. However, the inventors have discovered that the electrostatic forces generated by the electrodes may produce processing non-uniformities on the workpiece. For example, due to the layout of the electrodes, existing bipolar electrostatic chucks may cause a pattern of edge-to-edge etch rate non-uniformity, which has a clear edge-to-edge pattern in the electric field distribution due to the connection of the electrodes to their respective one or more power supplies.

[0019] Thus, example aspects of the present disclosure provide a unique radial layout for clamping (e.g., clamping) electrodes. The clamping electrodes can be thermally isolated and electrically connected in a manner that results in a total of four isolated regions in the clamping electrode. In general, example aspects of the present disclosure are directed to an electrostatic chuck comprising a clamping layer having one or more clamping electrodes. The clamping electrode comprises a first clamping electrode defining a first clamping region and a second clamping region. The clamping electrode comprises a second clamping electrode defining a third clamping region and a fourth clamping region. The first clamping region and the second clamping region are separated by a first gap. The first clamping region and the second clamping region are electrically connected by at least one electrical connector extending across the first gap. The third clamping region and the fourth clamping region are separated by a second gap. The third clamping region and the fourth clamping region are electrically connected by at least one electrical connector extending across the second gap.

[0020] The first and second clamping electrodes are arranged in a radial manner such that the first clamping region is radially innermost, the second clamping region is radially inward from the third clamping region and radially outward from the first clamping region, and the third clamping region is radially inward from the fourth clamping region and radially outward from the second clamping region. The clamping regions may correspond to an arrangement of one or more heating regions defined in a heating layer having heating electrodes.

[0021] In addition, the electrostatic chuck can include a thermal control system. The thermal control system can include a layer disposed in the chuck to distribute a heat exchange fluid or gas (e.g., helium). The thermal control system can include one or more flow channels interconnected with one or more release holes disposed in certain release regions. For example, in an embodiment, the release regions of the holes can be arranged in a radial pattern corresponding to the clamping regions and / or the heating regions. For example, a first region of the release holes can be positioned radially innermost, and a second region of the release holes can be positioned radially outward from the first region of the release holes. A third region of the release holes can be positioned radially outward from the second region of the release holes and radially inward from a fourth region of the release holes.

[0022] In certain embodiments, the electrostatic chuck may further include a sealing band. The sealing band is generally located on top of at least a portion of the workpiece support surface of the electrostatic chuck, and more specifically, the sealing band surrounds the periphery of the electrostatic chuck. The sealing band is configured to have a width W1 that is greater than about 3 millimeters (mm) up to about 10 mm. According to example aspects of the present disclosure, sizing the sealing band provides a stronger sealing band that can better withstand processing and cleaning conditions without being damaged, resulting in a situation where heat exchange gas leakage may occur.

[0023] Electrostatic chucks according to example embodiments of the present disclosure can provide many benefits and technical effects. For example, at least two clamping electrodes can be radially arranged and connected to obtain at least four thermal isolation zones. Each thermal isolation zone can be controlled to improve processing uniformity. In addition, electrostatic chuck bias compensation (e.g., clamping voltage offset) can be used to actively control etching rate uniformity and / or chemical deposition on the workpiece during processing. In addition, certain heating areas and / or release hole areas provided can further enhance temperature control in radial and azimuthal directions across the workpiece. In addition, as provided herein, sizing the sealing tape ensures that the sealing tape is more durable and less susceptible to erosion caused by plasma exposure, and therefore, it is less likely that heat exchange gas will leak around the periphery of the workpiece.

[0024] refer to Figure 1-2 , for example, shows one embodiment of a workpiece processing system 100 made in accordance with the present disclosure. Figure 1 In the illustrated embodiment, the system includes a processing chamber 9. The processing chamber 9 includes a workpiece processing station 13. The processing station 13 includes a workpiece support 12 made in accordance with the present disclosure. Figure 1 The illustrated processing chamber includes one processing station 13 for processing one workpiece (e.g., a semiconductor wafer). However, it should be understood that in other embodiments, the processing chamber 9 may include more than one processing station. As shown, the processing station 13 includes a processing area 14. The processing area 14 is in communication with an isolation valve 17. The isolation valve 17 opens and closes to allow replacement of the workpiece. The isolation valve 17 is sealed to the processing chamber wall 10.

[0025] In the illustrated embodiment, the workpiece support 12 or at least a portion of the workpiece support includes an electrostatic chuck 24. The electrostatic chuck 24 is configured to generate an electrostatic force that holds the workpiece 16 on the top surface of the workpiece support 12. More specifically, the electrostatic chuck works by applying one (monopolar) or two (bipolar) high DC voltages between the electrostatic chuck and the workpiece. For example, the two (bipolar) DC voltages induce both positive and negative charges on one side of the first dielectric layer 28. These charges generate an attractive Coulomb force between the top surface of the workpiece support 12 and the workpiece 16. As described in more detail below, the workpiece support 12 includes a clamping layer having one or more clamping electrodes that implement the function of the electrostatic chuck. However, it should be understood that the teachings and principles of the present disclosure may also be applied to other workpiece supports that do not necessarily include an electrostatic chuck.

[0026] The processing station 13 is configured to receive a workpiece 16 on a workpiece support 12. Once the workpiece 16, such as a semiconductor wafer, is loaded into the processing chamber, the workpiece 16 is subjected to an energy source for causing the workpiece 16 to undergo a desired physical and / or chemical change. Energy sources that can be used to process the workpiece can include, for example, ion sources, reactive chemical sources, thermal sources, plasma sources, or mixtures thereof. Thermal sources that can be used to subject the workpiece to energy include optical energy sources, such as plasma arc lamps, tungsten halogen lamps, microwaves, induction, resistive heaters, or mixtures thereof.

[0027] In certain embodiments, the processing chamber 10 includes a plasma source for subjecting the workpiece to a plasma. The plasma is provided by one or more induction coils 39, which are in communication with an RF impedance matching device (not shown) and with an RF power supply (not shown). Although only one induction coil 39 is shown, the present disclosure is not limited thereto. In fact, any number of induction coils may be provided to generate a plasma in the processing chamber 9.

[0028] Provided Figure 1 The workpiece processing system 100 is shown for purposes of illustration and discussion. One of ordinary skill in the art using the disclosure provided herein will appreciate that an electrostatic chuck according to example aspects of the present disclosure may be used in any suitable processing system (eg, any suitable plasma processing system).

[0029] Reference now Figure 2As shown, the workpiece support 12 includes a workpiece receiving surface 18 defined by a dielectric portion 20. The dielectric portion 20 is located on top of a base, which in this embodiment includes a first base portion 22 located above a second base portion 15. In an embodiment, the combination of the dielectric portion 20, the first base portion 22, and the second base portion 15 can be referred to as an electrostatic chuck 24. The electrostatic chuck 24 and representative layers are made of any suitable metal or ceramic material. For example, in one embodiment, the base portions 22 and 15 can be made of aluminum. The electrostatic chuck 24 can also include aluminum oxide, aluminum nitride, yttrium oxide, zirconium oxide, and / or any other chemically resistant ceramic or plastic material. The electrostatic chuck 24 is attached to a workpiece support base 57. The purpose of the base 57 is to provide rigid mechanical support for the electrostatic chuck 24 and to provide thermal and electrical isolation from the processing chamber 9.

[0030] As described above, the dielectric portion 20 is located on top of the first base portion 22 and defines the workpiece receiving surface 18. The dielectric portion 20 can be made of any suitable dielectric material, such as a ceramic material. The dielectric portion can include multiple layers of dielectric material, or can include a single layer. In this embodiment, the dielectric portion 20 includes a first dielectric layer 28 located on top of a second dielectric layer 30 and a thicker second dielectric layer 30. The first dielectric layer 28 can have a thickness of about 0.4 mm to about 1 mm, for example, while the second dielectric layer 30 can have a thickness of about 2 mm to about 5 mm.

[0031] like Figure 2 As shown, the workpiece support 12 may also be in communication with an RF conduit 36 ​​that is in communication with an RF impedance matching device (not shown) that is in communication with an RF power source 38 for providing RF bias power to the workpiece.

[0032] In an alternative embodiment, the RF source power can be coupled to the workpiece support 12 through an RF impedance matching device (not shown) in communication with the RF conduit 36. In this embodiment, no additional RF power is supplied to the processing station 13. In an alternative embodiment, no RF source power is coupled to the workpiece support 12. During the workpiece processing, the RF power supply can be energized to generate ions and electrons in the plasma to react with the top surface of the workpiece 16 as desired. In other embodiments, the RF power supply independently controls the energy of the ions when they impact the top surface of the workpiece. Both the RF power supply and the DC power supply can be grounded using any suitable technology. In one embodiment, for example, both the RF and DC power supplies can be grounded to electrodes in communication with the processing chamber. In the illustrated embodiment, the processing chamber uses inductively coupled RF power to generate and maintain the plasma required for workpiece processing. The RF bias power is capacitively coupled to the plasma through the workpiece support 12.

[0033] The workpiece support 12 may include any suitable mounting device for loading and unloading the workpiece on the workpiece receiving surface 18. For example, in one embodiment, the workpiece support 12 may include a plurality of lift pins (not shown) that may be used to properly position the workpiece 16 on the workpiece receiving surface 18 and to raise and lower the workpiece 16 on the workpiece receiving surface. In this regard, the workpiece support 12 may include a plurality of pin channels for lift pin assemblies. In one embodiment, for example, the workpiece support 12 may include three pin channels for accommodating three pins.

[0034] In an embodiment, the workpiece processing system 100 may include a controller 175. The controller 175 controls the components in the processing chamber 9 to direct the processing of the workpiece 16. For example, the controller 175 can be used to control a power source (e.g., a DC power source, an AC power source, and / or an RF power source) connected to the electrodes in the clamping layer 40 and / or the heating layer 50. Additionally and / or alternatively, the controller 175 can be used to control the thermal management system 70 to control or maintain a desired workpiece temperature. The controller 175 can also implement one or more processing parameters, such as controlling an air flow controller and / or changing the conditions of the processing chamber 9 during the processing of the workpiece 16. The controller 175 can include, for example, one or more processors and / or one or more storage devices. The one or more storage devices can store computer-readable instructions that, when executed by one or more processors, cause the one or more processors to perform operations, such as any of the control operations described herein.

[0035] Reference now Figure 3 , an electrostatic chuck 24 portion of a workpiece support 12 is shown. As shown, a workpiece 16 is placed on the workpiece receiving surface 18. A sealing tape 80 is disposed around the perimeter of the electrostatic chuck 24 and disposed on at least a portion of the workpiece receiving surface 18. The sealing tape 80 will be discussed further herein. A clamping layer 40 is disposed between the first dielectric layer 28 and the second dielectric layer 30. The clamping layer 40 may include one or more clamping regions 42, 44, 46, 48, which will be discussed further herein. A heating layer 50 is disposed below the clamping layer 40 in the z-direction. The heating layer 52 may be disposed within the second dielectric layer 30 or between the second dielectric layer 30 and the first substrate portion 22. The heating layer includes one or more heating regions 52, 54, 56, 58, which will be discussed further herein. A thermal control system 70 is disposed in the electrostatic chuck 24. The thermal control system 70 may be disposed within the second dielectric layer 30 or the first substrate portion 22. Similar to the clamping layer 40 and the heating layer 50, the thermal control system 70 includes one or more regions 72, 74, 76, 78 of release apertures 73 for releasing a heat exchange fluid or gas to control the temperature of the workpiece 16. The thermal control system 70 will be discussed further herein.

[0036] like Figure 3 and 4 As shown, in one embodiment, to form the electrostatic chuck 24, a clamping layer 40 including one or more clamping electrodes may be positioned within the electrostatic chuck 24. For example, in an embodiment, the clamping layer 40 may be positioned between the first dielectric layer 28 and the second dielectric layer 30. Figure 2 As shown, one or more clamping electrodes present in the clamping layer 40 can be arranged to be connected to the DC power supply 34. Two different DC voltages can be supplied by a single DC power supply or two independent power supplies. The DC power supply 34 supplies the voltage required to generate an electric field, which is used to generate electrostatic attraction between the workpiece receiving surface 18 and the workpiece 16 held on the surface. The amount of voltage generated by the DC power supply can be used to adjust the amount of electrostatic attraction. In addition, when it is necessary to remove the workpiece 16 from the workpiece support 12, the DC power supply can be turned off so that no voltage is generated, or a reverse polarity voltage can be generated from the starting potential. The DC voltage typically varies between about 500 and 2000 volts.

[0037] like Figure 4 As shown, the clamping layer 40 may include one or more electrodes, such as at least two electrodes 41, 43, arranged in a radial arrangement. The first clamping electrode 41 may be coupled to a negative charge source, and the second clamping electrode 43 may be coupled to a positive charge source. However, in other embodiments, it is contemplated that the first or second clamping electrode 41, 43 may be coupled to either a positive or negative charge source. For example, in an embodiment, the first clamping electrode 41 is coupled to a negative DC voltage, and the second clamping electrode 43 is coupled to a positive DC voltage. In addition, the first clamping electrode 41 and the second clamping electrode 43 may be coupled to a DC power supply, an AC power supply and / or an RF power supply. In an embodiment, both the first clamping electrode 41 and the second clamping electrode 43 may be coupled to the same RF power supply.

[0038] In addition, if Figure 4 As shown, the clamping layer 40 includes a first clamping electrode 41 and a second clamping electrode 43 arranged in a radial arrangement. That is, the first clamping electrode 41 is arranged radially inward from the second clamping electrode 43. The first clamping electrode 41 defines a first clamping area 48 and a second clamping area 46. The second clamping electrode 43 defines a third clamping area 44 and a fourth clamping area 42. As shown, the first clamping area 48 is arranged radially inward. The second clamping area 46 is arranged radially outward from the first clamping area 48 and radially inward from the third clamping area 44. The fourth clamping area 42 is arranged radially outward.

[0039] Each clamping region 42, 44, 46, and 48 can be thermally isolated from each other. For example, the first clamping region 48 and the second clamping region 46 can be separated by a gap 45a. The third clamping region 44 and the fourth clamping region 42 can also be separated by a gap 45b. In addition, the gap 45a reduces the heat conduction between the first clamping region 48 and the second clamping region 46, and the second gap 45b reduces the heat conduction between the third clamping region 44 and the fourth clamping region 42. The gaps 45a, 45b can include air gaps or can include any suitable material. For example, in some embodiments, the gaps 45a, 45b include a dielectric material (e.g., a ceramic material).

[0040] One or more electrical connectors 47 may be used to couple the first clamping region 48 to the second clamping region 46. For example, a plurality of electrical connectors 47 may be used, such as at least five electrical connectors 47. Similarly, one or more electrical connectors 49 may be used to couple the third clamping region 44 to the fourth clamping region 42. The number of electrical connectors 49 may include more than 1, such as more than 5, such as more than 10. In some embodiments, the number of electrical connectors 47 connecting the first clamping region 48 and the second clamping region 46 may be less than the number of electrical connectors 49 connecting the third clamping region 44 and the fourth clamping region 42.

[0041] Although each of the two clamping electrodes 41 and 43 is thermally isolated into two regions, they are connected by electrical connections 47 or 49 to maintain them at approximately the same potential. For example, in an embodiment, the first clamping region 48 and the second clamping region 46 are positively charged with the same clamping voltage, while the third clamping region 44 and the fourth clamping region 42 are negatively charged with the same clamping voltage. Generally, the offset between the positive clamping voltage and the negative clamping voltage can be targeted to balance the clamping force to compensate for the self-DC bias on the workpiece, or can be intentionally operated in an unbalanced mode for the purpose of uniformity coordination. For example, a workpiece can be processed and the uniformity of the workpiece can be evaluated. When evaluating whether there is a uniformity problem, the electrostatic chuck bias can be adjusted to adjust the workpiece uniformity of the workpiece to be processed in the future. For example, the clamping voltage of either the first clamping electrode 41 or the second clamping electrode 43 can be adjusted to adjust the workpiece uniformity.

[0042] In addition, as noted, the clamping electrodes 41 and 43 can be connected to any suitable power or voltage source (e.g., a DC power source or an RF power source). In some embodiments, the clamping electrodes 41, 43 are coupled to a voltage source (e.g., a high DC voltage source) that is configured to provide a DC offset adjustment to balance one or more clamping forces or adjust workpiece processing uniformity. In some configurations, the clamping electrodes are coupled to a bipolar high voltage source (e.g., a bipolar high DC voltage source). In some configurations, each of the clamping regions 42, 44, 46, and / or 48 can be operated independently of each other to adjust workpiece uniformity. For example, in embodiments, different amounts of power output and / or different power sources themselves can be applied to any of the clamping regions 42, 44, 46, and 48 to adjust workpiece uniformity. For example, different amounts of DC voltage, RF power output, and / or different power sources can be applied to any of the clamping regions 42, 44, 46, 48 to adjust workpiece uniformity. For example, in certain embodiments, the application of different amounts of DC voltage and / or RF power applied across the clamping regions 42, 44, 46, 48 can modify the clamping electrodes 41, 43 to provide a tripolar or quadrupole electrostatic chuck. In addition, the clamping electrodes can be connected to a DC power source or an RF power source through one or more capacitors disposed along the RF path to prevent DC voltages from interfering with or approaching the RF delivery. Additionally or alternatively, a series inductor and / or resistor can be disposed in the DC path to prevent the RF voltage from approaching the DC voltage supply.

[0043] In addition, one or more traces may be utilized so as to arrange the clamping regions 42, 44, 46, 48 in any type of electrical configuration. For example, the first clamping region 48 and the third clamping region 44 may be electrically coupled to one or more traces embedded in a layer of the electrostatic chuck 24 to form a first clamping electrode 41, and the second clamping region 46 and the fourth clamping region 42 may be electrically coupled to one or more traces embedded in a layer of the electrostatic chuck 24 to form a second clamping electrode 43. Furthermore, in an embodiment, the first clamping region 48 and the fourth clamping region 42 may be electrically coupled to one or more traces embedded in a layer of the electrostatic chuck 24 to form a first clamping electrode 41, and the second clamping region 46 and the third clamping region 44 may be electrically coupled to one or more traces embedded in a layer of the electrostatic chuck 24 to form a second clamping electrode 43. In such an embodiment, the traces used to connect the different clamping regions 42, 44, 46, 48 may generally be located in a layer of the electrostatic chuck below the clamping layer 40. Once the selected clamping area is coupled via a trace, the trace may be connected to any suitable power source as described herein.

[0044] In one or more embodiments, the heating layer 50 may be disposed in the workpiece support 12. For example, Figure 5Different regions of the heating layer 50 are shown. For example, the heating layer 50 may include one or more electrodes 51, such as a plurality of electrodes 51a, 51b, 51c, 51d arranged in a radial pattern. For example, in some embodiments, the heating layer 50 includes at least four electrodes 51a, 51b, 51c, 51d. Each electrode 51a, 51b, 51c, 51d can be connected to a suitable AC or DC power source. In some embodiments, the plurality of heating electrodes 51a, 51b, 51c, 51d are arranged in a radial manner to form a first heating region 58, a second heating region 56, a third heating region 54, and a fourth heating region 52, such as Figure 5 The heating regions 52, 54, 56 and 58 may be arranged on or within the heating layer 50 in the electrostatic chuck 24 in any manner.

[0045] In certain embodiments, heating regions 52, 54, 56, and 58 correspond to clamping regions 42, 44, 46, and 48 present in clamping layer 40. For example, Figure 3 As shown, the first heating region 52 is disposed below the first clamping region 42 in the z-direction. The second heating region 56 is disposed below the second clamping region 46 in the z-direction. The third heating region 54 is disposed below the third clamping region 44 in the z-direction. The fourth heating region 52 is disposed below the fourth clamping region 42 in the z-direction. In addition, the widths of the heating regions 52, 54, 56, 58 are substantially the same as the widths of the clamping regions 42, 44, 46, 48. For example, the width of the first heating region 58 is substantially the same as the width of the first clamping region 48. The width of the second heating region 56 is substantially the same as the width of the second clamping region 46. The width of the third heating region 54 is substantially the same as the width of the third clamping region 44. The width of the fourth heating region 52 is substantially the same as the width of the fourth clamping region 42. The arrangement of the heating regions 52, 54, 56, 58 relative to the clamping regions 42, 44, 46, 48 can help to thermally isolate between radial regions. Additionally, each heating zone 52, 54, 56, 58 overlaps its corresponding clamping zone 42, 44, 46, 48 to facilitate thermal transition between zones in a radial direction.

[0046] Each of the heating zones 52, 54, 56, 58 can be independently controlled to adjust the heating of different radial regions of the workpiece during processing. For example, each heating zone 52, 54, 56, 58 can be formed by at least one electrode, and each individual electrode (e.g., 51a, 51b, 51c, 51d) used to form an individual heating zone 52, 54, 56, 58 can be independently connected to a power source. Therefore, different amounts and / or types of power can be supplied to each electrode to adjust the temperature of each heating zone 52, 54, 56, 58.

[0047] In order to connect each electrode present in the electrostatic chuck (e.g., a clamping electrode and / or a heating electrode) to an appropriate or desired power source, one or more traces and / or vias may be used to connect the electrode to the power source. Figure 6-8 For example, in some embodiments, the trace 60 is used to connect the second clamping electrode 43 to an appropriate power source. For example, the trace 60 can extend from the second electrode 43 toward the center of the clamping layer 40. In some embodiments, the trace 60 extends in a layer below the clamping electrodes 41, 43 toward a centrally located delivery socket location so as to couple the second clamping electrode 43 to an appropriate power source. In addition, in an embodiment, one or more through holes 61 can be used to connect the trace 60 to the second electrode 43 and the delivery socket location. The through hole 61 can be used to extend the trace 60 in a layer below the clamping layer 40, that is, the trace 60 is not on the same plane as the clamping layer 40 perpendicular to the z-direction. Similarly, one or more traces 60 can extend from each heating electrode (e.g., 51a, 51b, 51c, 51d) toward a centrally located delivery socket location so as to couple the heating electrode to an appropriate power source. Similar to the clamped electrode arrangement, one or more vias may be used to extend traces 60 below the heating layer 50, ie, the one or more traces 60 for connecting the heating electrode to a power source are not in the same plane as the heating layer 50 orthogonal to the z-direction.

[0048] In some embodiments, the workpiece support 12 may also include a thermal control system 70. The thermal control system 70 may include one or more channels 71 for circulating a heat exchange fluid or a heat exchange gas (e.g., helium). The thermal control system 70 may be included as a layer disposed within the electrostatic chuck. For example, in some embodiments, the thermal control system 70 layer may be located below the workpiece 16 when the workpiece is arranged on the workpiece support 12. For example, in some embodiments, the thermal control system 70 may be disposed between the workpiece 16 and the clamping layer 40. However, in certain other embodiments, it is contemplated that the thermal control system 70 may be located between the clamping layer 40 and the heating layer 50 or below the heating layer 50. The thermal control system 70 may be disposed within the electrostatic chuck in any manner suitable for processing the workpiece 16 in a processing chamber. Back Figure 3 , the thermal control system 70 is disposed below both the clamping layer 40 and the heating layer 50 in the z direction.

[0049] like Fig. 9As shown, the thermal control system 70 includes one or more channels 71, and also includes one or more release holes 73. One or more channels 71 are interconnected with each release hole 73 by a pattern. The release holes 73 are organized according to the regions 72, 74, 76, 78 of the release holes 73. A single heat exchange fluid or heat exchange gas inlet 75 is shown. For example, in an embodiment, the thermal control system 70 includes a first region 78 of the release holes 73, a second region 76 of the release holes 73, a third region 74 of the release holes 73, and a fourth region 72 of the release holes 73. The first region 78 of the release holes 73 is arranged radially inward. The second region 76 of the release holes 73 is arranged radially outward from the first region 78 of the release holes 73 and radially inward from the third region 74 of the release holes 73. The third region 74 of the release holes 73 is arranged radially inward from the fourth region 72 of the release holes 73 and radially outward from the second region 76 of the release holes 73. Although at least four regions (e.g., 72, 74, 76, 78) of the release holes 73 are shown, the present disclosure is not limited thereto. In fact, any number of release hole regions may be configured in the thermal control system 70 disclosed herein. In addition, the first region 78 of the release holes 73 includes the least number of release holes 73 compared to the other regions 72, 74, 76. The second region 76 of the release holes 73 includes more release holes 73 than the first region 78 of the release holes 73 but fewer release holes 73 than the third region 74 of the release holes 73. The third region 74 of the release holes 73 includes more release holes 73 than the second region 76 of the release holes 73 but fewer release holes 73 than the fourth region 72 of the release holes 73. The fourth region 72 of the release holes 73 includes the most release holes 73 compared to the other regions 74, 76, 78.

[0050] In an embodiment, each region 72, 74, 76, 78 of the release hole 73 generally corresponds to one or more heating regions 52, 54, 56, 58 and / or clamping regions 42, 44, 46, 48, respectively. That is, the regions 72, 74, 76, 78 of the release hole 73 can be arranged below or on top of the corresponding regions of the clamping layer 40 and the heating layer 50. Such an arrangement is shown in FIG. Figure 3In some embodiments, the regions 72, 74, 76, 78 of release holes may be disposed in a layer located below both the clamping layer 40 and the heating layer 50. Thus, one or more heat exchange conduits may be drilled through the workpiece receiving surface 18, the clamping layer 40, and the heating layer 50 so that the heat exchange fluid or gas released from the release holes 73 located in each of the regions 72, 74, 76, 78 may contact the back side of the workpiece 16 to adjust the temperature of the workpiece 16. However, in other embodiments, the thermal control system 70 may be located directly below the workpiece 16 when the workpiece 16 is held on the workpiece support 12. For example, the regions 72, 74, 76, 78 of release holes 73 may be located within or directly below the first dielectric layer 28. In an embodiment, one or more conduits may be drilled through only the first dielectric layer 28 so that the heat exchange gas or heat exchange fluid released from the release holes 73 located in each of the regions 72, 74, 76, 78 may contact the back side of the workpiece 16 to adjust the temperature of the workpiece 16.

[0051] Reference now Fig.10 In some embodiments (e.g., including embodiments of a thermal control system capable of helium dispensing), the electrostatic chuck 24 may include a sealing band 80. The sealing band 80 generally surrounds the periphery of the electrostatic chuck 24, including at least a portion of the workpiece receiving surface 18. The sealing band 80 is configured to have a width W1 that is greater than about 3 millimeters (mm) up to about 10 mm, such as greater than 4 mm up to about 9 mm, such as greater than 5 mm up to about 8 mm, such as greater than 5 mm up to about 7 mm. The sealing band 80 is generally located on top of the electrostatic chuck 24 to seal any heat exchange fluid and / or gas (e.g., helium) below the workpiece 16 when the workpiece 16 is clamped to the electrostatic chuck 24. In addition, the electrostatic chuck is typically dry cleaned in situ (ISD) and may be further cleaned ex situ during maintenance. If the sealing band is damaged or worn after hours of use or during cleaning, such damage may cause the heat exchange gas (e.g., helium) to leak, thereby preventing the workpiece temperature from being maintained at the desired level. Additionally, if the heat exchange gas (e.g., helium) is able to seep out and surround the sealing tape, allowing it to enter the top of the workpiece during processing, this may cause further uniformity issues during workpiece processing. Therefore, the width W1 of the sealing tape 80 provided herein makes the sealing tape 80 stronger and better able to withstand processing and cleaning conditions without damage, thereby making leakage of the heat exchange gas less likely to occur.

[0052] Although the subject matter has been described in detail with respect to specific exemplary embodiments of the subject matter, it should be understood that those skilled in the art will readily derive alternatives, modifications, and equivalents to these embodiments after understanding the foregoing. Therefore, the scope of the present disclosure is presented by way of example rather than by way of limitation, and the present disclosure does not exclude such modifications, variations, and / or additions to the subject matter as are readily apparent to those skilled in the art.

Claims

1. An electrostatic chuck, comprising: a workpiece support surface configured to support a workpiece during processing; and A clamping layer, the clamping layer comprising a plurality of clamping electrodes, the clamping layer comprising: a first clamping electrode defining a first clamping region and a second clamping region separated by a first gap, the first clamping region and the second clamping region being electrically connected by at least one electrical connector extending across the first gap; and a second clamping electrode disposed radially outward from the first clamping electrode, the second clamping electrode defining a third clamping region and a fourth clamping region, the third clamping region and the fourth clamping region being separated by a second gap, the third clamping region and the fourth clamping region being electrically connected by at least one electrical connector extending across the second gap; Wherein the first gap reduces heat conduction between the first clamping area and the second clamping area, and wherein the second gap reduces heat conduction between the third clamping area and the fourth clamping area.

2. The electrostatic chuck of claim 1, wherein the first gap and / or the second gap comprises a ceramic material.

3. The electrostatic chuck of claim 1 , wherein the first clamping electrode and the second clamping electrode are coupled to a voltage source configured to provide a DC offset adjustment to balance clamping force or adjust workpiece processing uniformity.

4. The electrostatic chuck of claim 1, wherein the first clamping electrode and the second clamping electrode are connected to a DC power source, an AC power source, and / or an RF power source.

5. The electrostatic chuck of claim 4, wherein the first clamping electrode and the second clamping electrode are connected to the same RF power source.

6. The electrostatic chuck of claim 1 , wherein the first chucking electrode is coupled to a negative DC voltage, and wherein the second chucking electrode is coupled to a positive DC voltage.

7. The electrostatic chuck of claim 1 , wherein the first clamping region is disposed radially innermost, wherein the second clamping region is disposed radially outward from the first clamping region and radially inward from the third clamping region, and wherein the third clamping region is disposed radially outward from the second clamping region and radially inward from the fourth clamping region.

8. The electrostatic chuck of claim 1 , wherein different amounts of DC voltage, different amounts of RF power output, and / or different power supplies can be applied to the first clamping region, the second clamping region, the third clamping region, and / or the fourth clamping region to adjust workpiece uniformity.

9. The electrostatic chuck of claim 1, further comprising a plurality of heating electrodes defining a heating layer, wherein the heating electrodes are arranged in a radial manner to form a first heating region, a second heating region, a third heating region, and a fourth heating region.

10. The electrostatic chuck of claim 9, wherein the heating layer is disposed below the clamping layer in the z direction, further wherein the first heating region is disposed below the first clamping region in the z direction, the second heating region is disposed below the second clamping region in the z direction, the third heating region is disposed below the third clamping region in the z direction, and the fourth heating region is disposed below the fourth clamping region in the z direction.

11. A workpiece processing device, comprising: Processing room; and A workpiece support is provided in the processing chamber, the workpiece support comprising: An electrostatic chuck comprising a workpiece support surface configured to support a workpiece during processing and a clamping layer comprising a plurality of clamping electrodes, the clamping layer comprising: a first clamping electrode defining a first clamping region and a second clamping region separated by a first gap, the first clamping region and the second clamping region being electrically connected by at least one electrical connector extending across the first gap; and a second clamping electrode disposed radially outward from the first clamping electrode, the second clamping electrode defining a third clamping region and a fourth clamping region, the third clamping region and the fourth clamping region being separated by a second gap, the third clamping region and the fourth clamping region being electrically connected by at least one electrical connector extending across the second gap; Wherein the first gap reduces heat conduction between the first clamping region and the second clamping region, and wherein the second gap reduces heat conduction between the third clamping region and the fourth clamping region.

12. The workpiece processing apparatus of claim 11, comprising an inductively coupled plasma source capable of generating plasma from one or more process gases in the process chamber.

13. The workpiece processing apparatus of claim 11, comprising one or more heat sources capable of thermally treating the workpiece.

14. The workpiece processing apparatus of claim 11, wherein a negative DC voltage is applied to the first chucking electrode, and wherein a positive DC voltage is applied to the second chucking electrode.

15. A workpiece processing device according to claim 11, wherein the first clamping area is arranged at the radially innermost side, wherein the second clamping area is arranged radially outward from the first clamping area and radially inward from the third clamping area, and wherein the third clamping area is arranged radially outward from the second clamping area and radially inward from the fourth clamping area.

16. The workpiece processing apparatus of claim 11, wherein different amounts of DC voltage, RF power output, and / or different power supplies can be applied to the first, second, third, and / or fourth clamping regions to adjust workpiece uniformity.

17. The workpiece processing device according to claim 11 further includes a plurality of heating electrodes, which form a heating layer arranged below the clamping layer along the z direction, wherein the heating electrodes are arranged radially to form a first heating area, a second heating area, a third heating area and a fourth heating area.

18. A workpiece processing device according to claim 17, wherein the first heating zone is arranged below the first clamping zone in the z direction, the second heating zone is arranged below the second clamping zone in the z direction, the third heating zone is arranged below the third clamping zone in the z direction, and the fourth heating zone is arranged below the fourth clamping zone in the z direction.

19. A system for processing a workpiece, the system comprising: a processing chamber configured to perform at least one treatment process on a workpiece; A workpiece support is provided in the processing chamber, wherein the workpiece support comprises an electrostatic chuck, and the electrostatic chuck comprises: a workpiece support surface configured to support the workpiece during processing; A clamping layer, the clamping layer comprising a plurality of clamping electrodes, the clamping layer comprising: a first clamping electrode defining a first clamping region and a second clamping region separated by a first gap, the first clamping region and the second clamping region being electrically connected by at least one electrical connector extending across the first gap; and a second clamping electrode disposed radially outward from the first clamping electrode, the second clamping electrode defining a third clamping region and a fourth clamping region, the third clamping region and the fourth clamping region being separated by a second gap, the third clamping region and the fourth clamping region being electrically connected by at least one electrical connector extending across the second gap; wherein the first gap reduces thermal conduction between the first clamping region and the second clamping region, and wherein the second gap reduces thermal conduction between the third clamping region and the fourth clamping region; and one or more power supply voltage sources coupled to the plurality of clamping electrodes, the voltage sources configured to provide a DC offset adjustment to balance clamping forces or adjust workpiece processing uniformity; and A controller is configured to regulate power output or supply voltage supply from the one or more supply voltage sources to the plurality of clamping electrodes.

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