Monolithic Microwave Integrated Circuit Front-End Module

Abstract

A monolithic microwave integrated circuit (MMIC) front-end module (100) is provided, comprising: a gallium nitride structure (110) supported by a silicon substrate (120); a silicon-based transmit / receive switch (130) having a transmit mode and a receive mode; a transmit amplifier (112) configured to amplify an outgoing signal to be transmitted by the MMIC front-end module, wherein the transmit amplifier is electrically connected (132) to the transmit / receive switch, wherein the transmit amplifier comprises a gallium nitride high electron mobility transistor (HEMT) (114) formed in the gallium nitride structure; and a receive amplifier (113) configured to amplify an incoming signal received by the MMIC front-end module, wherein the receive amplifier is electrically connected (133) to the transmit / receive switch, wherein the receive amplifier comprises a gallium nitride HEMT (115) formed in the gallium nitride structure.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency (RF) transceiver front-end modules, and in particular to a monolithic microwave integrated circuit (MMIC) front-end module. Background Art

[0002] For many applications, such as RF amplifiers, traditional silicon complementary metal oxide semiconductor (CMOS) transistors have reached their performance limits. Gallium nitride (GaN)-based transistors and high electron mobility transistors (HEMTs) offer improved performance compared to their traditional silicon counterparts. However, due to the overall technological maturity of silicon CMOS technology, silicon remains suitable for many applications, such as digital logic and switching. Therefore, integrated RF circuits that include both silicon and GaN devices (e.g., transistors, switches, converters, and amplifiers) may be desirable. However, this integration is not straightforward, due in part to differences in material properties. These differences make integrating high-quality GaN materials onto traditional silicon substrates particularly complex. This is problematic because high-quality GaN materials are required to manufacture devices such as high-performance HEMTs. Traditional solutions to this problem may include thick and complex buffer layers or structures. However, these are not consistently sufficient and can only mitigate the quality losses associated with integration. As the thickness of the buffer layer or structure increases, material usage also disadvantageously increases. Therefore, improvements are needed in this area of ​​technology. Summary of the Invention

[0003] It is an object of the present invention to alleviate at least some of the problems of the prior art.

[0004] According to a first aspect of the present invention, a monolithic microwave integrated circuit (MMIC) front-end module is provided.

[0005] The MMIC includes:

[0006] A gallium nitride structure supported by a silicon substrate;

[0007] A silicon-based transmit / receive switch with transmit and receive modes;

[0008] a transmit amplifier configured to amplify an outgoing signal to be transmitted by the MMIC front-end module, wherein the transmit amplifier is electrically connected to the transmit / receive switch, wherein the transmit amplifier includes a gallium nitride high electron mobility transistor (HEMT) formed in the gallium nitride structure; and

[0009] A receive amplifier configured to amplify an incoming signal received by the MMIC front-end module, wherein the receive amplifier is electrically connected to the transmit / receive switch, wherein the receive amplifier includes a gallium nitride HEMT formed in the gallium nitride structure.

[0010] The term "gallium nitride structure" is understood to mean a laterally confined structure, ie not a layer covering the entire silicon substrate area. A gallium nitride structure is further understood to mean a structure comprising gallium nitride material to any extent.

[0011] The term "supported" means that the gallium nitride structure is located on or over the silicon substrate in a vertical direction that is perpendicular to and normal to the top surface of the silicon substrate.

[0012] The terms "transmit mode" and "receive mode" refer to the ability of a transmit / receive switch to transmit or receive wireless signals. In practice, transmit mode can be seen as the switch being adapted to provide a more direct electrical path between the transmit amplifier and the antenna for outgoing signals, while receive mode can be seen as the switch being adapted to provide a more direct electrical path between the antenna and the receive amplifier for incoming signals. Transmit mode can be understood as the mode in which the MMIC front-end module can transmit outgoing wireless signals. Receive mode can be understood as the mode in which the MMIC front-end module can receive incoming wireless signals. Because of the existence of both transmit and receive modes, the MMIC front-end module can be considered a transceiver.

[0013] The term "transmit amplifier" can generally be understood as an RF power amplifier (PA). Therefore, the term "receive amplifier" can generally be understood as an RF low-noise amplifier (LNA).

[0014] Materials (ie, elements and compounds) may be referred to by their full names (eg, silicon or gallium nitride) or by their IUPAC symbols / names (eg, Si or GaN).

[0015] The terms "outgoing signal" and "incoming signal" can be understood as electrical signals (such as voltage or current) at electrical nodes or electromagnetic signals (such as radio waves) in a free-space medium (such as air or vacuum). Signals can be converted between purely electrical and electromagnetic signals by, or connected to, the antenna components of the MMIC front-end module. The signals can be processed by components of the MMIC front-end module, such as amplifiers and frequency converters.

[0016] An outgoing signal can still be an outgoing signal after being up-converted by a frequency converter, amplified by a transmit amplifier, and / or transmitted into free space by an antenna. Correspondingly, an incoming signal can still be an incoming signal after being received by an antenna, amplified by a receive amplifier, and / or down-converted by a frequency converter.

[0017] By providing a GaN structure on or above a silicon substrate, the inventors have recognized that GaN HEMT devices, as part of transmit and receive amplifiers, can be more tightly integrated with silicon-based transmit / receive switches and other silicon-based devices and components. This, in turn, is advantageous because it provides the ability to use GaN only where it is deemed most needed (e.g., for amplifiers), while allowing less critical components / devices of the MMIC, or components / devices that simply have different requirements, to be silicon-based.

[0018] Compared to traditional silicon, GaN materials may have a larger bandgap, higher electron mobility, higher thermal conductivity, and a higher melting point. This, in turn, could lead to devices (such as transistors) with higher switching frequencies, less energy loss, higher voltage operation, and higher temperature operation.

[0019] HEMTs may have advantages over conventional metal oxide semiconductor field effect transistors (MOSFETs). HEMTs can provide ballistic charge carrier transport with less resistance. This can improve the efficiency, speed, and power performance of HEMTs.

[0020] Thanks to the use of HEMT and GaN materials, MMIC front-end modules can provide energy savings and overall more efficient operation compared to traditional solutions and devices in the technology field.

[0021] The transmit amplifier may include a plurality of HEMTs formed in a gallium nitride structure.

[0022] The receive amplifier may include a plurality of HEMTs formed in a gallium nitride structure.

[0023] Transmit amplifiers, and indeed receive amplifiers as well, can be built using just one HEMT or multiple HEMTs, depending on the amplifier circuit design chosen. Less complex amplifiers might have no more than a few HEMTs, or even just one, while more advanced multi-HEMT amplifiers can offer improved amplifier performance metrics, such as higher frequency operation or lower power loss.

[0024] The gallium nitride structure supported by a silicon substrate includes a first gallium nitride island and a second gallium nitride island, wherein the first gallium nitride island and the second gallium nitride island are physically separated and laterally arranged together on the silicon substrate.

[0025] One advantage of providing the GaN structure as multiple islands may be improved thermal characteristics. Rather than expanding and contracting as a single structure due to temperature changes, the islands can do so individually and independently. Consequently, the mechanical stresses of expansion and contraction can be distributed across the islands, thereby reducing the overall maximum mechanical stress. This can be particularly important because silicon and GaN have different coefficients of thermal expansion. Furthermore, controlling the temperature of the GaN islands (e.g., through active or passive cooling) may be less complex than for larger structures. GaN islands also offer the advantage of more evenly distributing heat buildup from multiple devices.

[0026] The GaN HEMT of the transmit amplifier may be formed in the first GaN island, and the GaN HEMT of the receive amplifier may be formed in the second GaN island.

[0027] By locating different devices on different physical structures (ie, islands), the interference of the first device on the operation of the second device can be reduced. Such interference can be understood as, for example, a noisier signal.

[0028] The first gallium nitride island may have a lateral size in the range of 0.1 μm to 10 μm. The second gallium nitride island may have a lateral size in the range of 0.1 μm to 10 μm.

[0029] The lateral dimensions of the GaN structure may be in the range of 0.1 μm to 10 μm.

[0030] The term "lateral dimension" may refer to a dimension parallel to the planar top surface of the silicon substrate. In the case of a GaN structure or GaN island, the lateral dimension may be understood as, for example, the diameter or radius of a polygon or circle. Since GaN most commonly organizes in the wurtzite crystal structure, the shape of the GaN structure or GaN island may correspond to a hexagon. The lateral dimension may alternatively refer to other dimensions, such as the length of the edge of the structure or island.

[0031] The MMIC front-end module may further include:

[0032] a silicon-based upconverter electrically connected to the transmit amplifier, wherein the upconverter is configured to upconvert the frequency of an outgoing signal to be transmitted by the MMIC front-end module; and

[0033] A silicon-based downconverter is electrically connected to the receiving amplifier, wherein the downconverter is configured to downconvert the frequency of an incoming signal received by the MMIC front-end module.

[0034] The term "downconverter," and indeed, "upconverter," can be understood as corresponding to an RF mixer. An upconverter can be understood as converting an outgoing, transmitted intermediate frequency (IF) signal into an RF signal. Therefore, an upconverter can be understood as converting an incoming / received RF signal into an IF signal.

[0035] The proposed integration of GaN and silicon devices enables not only the transmit / receive switch to be silicon-based, but also the frequency converter to be silicon-based.

[0036] The MMIC front-end module may further include an antenna configured to transmit and receive wireless signals, wherein the transmit / receive switch is electrically connected to the antenna.

[0037] An antenna is understood to be any component / structure configured or adapted to transmit and receive wireless electromagnetic signals. Integrating the antenna into the MMIC front end near semiconductor devices, amplifiers, and switches is preferred because parasitic losses can be reduced and the size of the overall MMIC front end module can be reduced.

[0038] The antenna can be supported by the silicon substrate, thus enabling tighter antenna integration.

[0039] The antenna may be an array antenna comprising a plurality of antenna array elements. The antenna array can implement beamforming, thereby reducing waste and enabling more flexible wireless communication.

[0040] The gallium nitride structure may include a vertical nanowire structure arranged perpendicular to the silicon substrate.

[0041] The GaN structure may include a GaN layer and an Al x Ga 1-x N layers, where 0≤x≤0.95.

[0042] The gallium nitride structure may include an aluminum nitride layer.

[0043] The advantages of this gallium nitride structure include an improved semiconductor material with high crystal quality and fewer defects. Compared to structures using a buffer layer, the gallium nitride structure can also be made thinner and requires less material to produce.

[0044] The silicon-based transmit / receive switch may be integrally formed in a silicon substrate, or wherein the silicon-based transmit / receive switch is supported by a silicon substrate.

[0045] As a result, tighter component integration can be achieved. By utilizing pre-existing silicon substrates to form silicon-based devices, some manufacturing steps can be removed from the production process, making it less complex overall.

[0046] The further applicable scope of the present invention will become clear from the detailed description given below. However, it should be understood that the detailed description and specific examples, although indicating preferred embodiments of the present invention, are given only in an illustrative manner, because various changes and modifications within the scope of the present invention will become clear to those skilled in the art based on this detailed description.

[0047] Therefore, it should be understood that the present invention is not limited to the specific components of the devices described or the actions of the methods described, as such devices and methods may vary. It should also be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting.

[0048] It must be noted that, as used in this specification and the appended claims, the articles "a," "an," "the," and "said" are intended to imply the presence of one or more elements, unless the context clearly dictates otherwise. Thus, for example, reference to "a unit" or "the unit" may include several devices, etc. Furthermore, the words "comprising," "including," "containing," and similar terms do not exclude other elements or steps. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] The above and other aspects of the present invention will be described in more detail below with reference to the accompanying drawings. These drawings should not be considered limiting; rather, they should be considered for purposes of explanation and understanding.

[0050] As shown in the accompanying drawings, the sizes of layers and regions may be exaggerated for illustrative purposes and are therefore provided to illustrate the overall structure. Throughout, like reference numerals refer to like elements.

[0051] Figure 1 A schematic diagram of an MMIC front-end module is shown.

[0052] Figure 2 A schematic diagram of an MMIC front-end module including two GaN islands is shown.

[0053] Figure 3 A schematic diagram of an MMIC front-end module including an upconverter and a downconverter is shown.

[0054] Figure 4 A schematic diagram of an MMIC front-end module including an antenna is shown.

[0055] Figure 5 A schematic cross-sectional view of a gallium nitride structure is shown.

[0056] Figure 6The circuit of an exemplary transmit amplifier is shown.

[0057] Figure 7 The circuit of an exemplary receive amplifier is shown. DETAILED DESCRIPTION

[0058] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which presently preferred embodiments of the invention are shown. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided for thoroughness and completeness, and to fully convey the scope of the invention to those skilled in the art.

[0059] Figure 1 A monolithic microwave integrated circuit (MMIC) front-end module 100 is shown.

[0060] The MMIC front-end module 100 includes a gallium nitride structure 110 , which is supported by a silicon substrate 120 .

[0061] The MMIC front-end module 100 further includes a silicon-based transmit / receive switch 130. The transmit / receive switch 130 has a transmit mode and a receive mode.

[0062] The lateral dimensions of the gallium nitride structure 110 may be in the range of 0.1 μm to 10 μm. From a top view, the gallium nitride structure 110 may have a circular shape or a polygonal shape. The gallium nitride structure 110 may have a hexagonal shape.

[0063] The silicon-based transmit / receive switch 130 may be integrally formed in the silicon substrate 120. The silicon-based transmit / receive switch 130 may be supported by the silicon substrate 120. The silicon-based transmit / receive switch 130 may be formed in an added silicon structure rather than initially being part of the silicon substrate 120. Such an added silicon structure may be deposited, for example, by chemical vapor deposition (CVD) or a similar deposition technique.

[0064] The silicon substrate 120 may have a Miller index of <111> The silicon substrate 120 may be a substantially single crystal silicon substrate. The silicon substrate 120 may be a silicon wafer.

[0065] The MMIC front-end module 100 further includes a transmit amplifier 112 electrically connected 132 to the transmit / receive switch 130. The transmit amplifier 112 can be configured to amplify an outgoing signal to be transmitted by the MMIC front-end module 100. The transmit amplifier 112 includes a gallium nitride high electron mobility transistor (HEMT) 114 formed in the gallium nitride structure 110. The HEMT 114 can include a source node, a drain node, and a gate node, wherein a voltage applied to the gate node can affect a current between the source node and the drain node.

[0066] The transmit amplifier 112 may be a PA. The transmit amplifier 112 may be a PA of class A, B, AB, C, D, E, F, G, or H. The transmit amplifier 112 may be a differential amplifier. Figure 6 The circuit of an exemplary transmit amplifier 112 is shown as a class E amplifier. The transmit amplifier 112 can be configured to amplify the outgoing signal, for example, by increasing the voltage or current of the outgoing signal. The transmit amplifier 112 can include a plurality of HEMTs formed in the gallium nitride structure 110.

[0067] The MMIC front-end module 100 further includes a receive amplifier 113 electrically connected 133 to the transmit / receive switch 130. The receive amplifier 113 can be configured to amplify an incoming signal received by the MMIC front-end module 100. The receive amplifier 113 includes a gallium nitride HEMT 115 formed in the gallium nitride structure 110. The HEMT 115 can also include a source node, a drain node, and a gate node, wherein a voltage applied to the gate node can affect a current between the source node and the drain node.

[0068] The receiving amplifier 113 may be an LNA or a differential amplifier. Figure 7 The circuit of an exemplary receive amplifier 113 is shown. The receive amplifier 113 can be configured to amplify an incoming signal, for example, by increasing the voltage or current of the incoming signal. The receive amplifier 113 can include a plurality of HEMTs formed in the gallium nitride structure 110.

[0069] exist Figures 1 to 4 , amplifiers 112, 113 are shown as dashed triangles. These should be considered as schematic block diagram representations of the amplifiers, and Figures 6 and 7 Exemplary circuits for amplifiers 112, 113 are shown.

[0070] exist Figure 6 In , the output node (VOUT) corresponds to the electrical connection 132. Figure 7 , the input node (VIN) corresponds to the electrical connection 133 .

[0071] Note that VIN and VOUT refer to a single amplifier stage. Therefore, Figure 6 The VIN node in does not correspond to Figure 7 For the same reason, Figure 6 The VOUT node does not correspond to Figure 7The drive node (VDD) can be shared or separate for both amplifiers 112 and 113. The VDD node can have or be adapted to have a substantially fixed voltage level. The ground node (GND) can be shared or separate for both amplifiers 112 and 113. The GND node can be understood as a relative ground node having a substantially fixed voltage level. The GND node can have a voltage level lower than the voltage level of the VDD node. Figure 7 The bias node (VBIAS) of the exemplary LNA in FIG1 may have, or be adapted to have, a bias voltage level configured to affect the voltage level at the gate node of the HEMT 115. The exemplary circuit is also shown to include resistors, inductors, and capacitors, which may be formed as discrete components or intrinsic components depending on the characteristics of the electrical conductors in the amplifier circuit.

[0072] Setting the transmit / receive switch 130 to transmit mode may include forming an electrical path from the transmit amplifier 112 via the electrical connection 132, through the transmit / receive switch 130, to, for example, an antenna. Setting the transmit / receive switch 130 to receive mode may include forming an electrical path from the receive amplifier 113 via the electrical connection 133, through the transmit / receive switch 130, to, for example, an antenna.

[0073] Figure 2 The MMIC front-end module 100 is shown, wherein the gallium nitride structure 110 supported by the silicon substrate 120 includes a first gallium nitride island 211 and a second gallium nitride island 212. The first gallium nitride island 211 and the second gallium nitride island 212 are physically separated and laterally arranged together on the silicon substrate 120.

[0074] The gallium nitride HEMT 114 of the transmit amplifier 112 may be formed in the first gallium nitride island 211 , and the gallium nitride HEMT 115 of the receive amplifier 113 may be formed in the second gallium nitride island 212 .

[0075] The first gallium nitride islands 211 may have a lateral dimension in the range of 0.1 μm to 10 μm. The second gallium nitride islands 212 may have a lateral dimension in the range of 0.1 μm to 10 μm. From a top view, the gallium nitride islands 211 and 212 may have a circular or polygonal shape. The gallium nitride islands 211 and 212 may have a hexagonal shape.

[0076] Figure 3 The MMIC front end module 100 is shown further comprising a silicon-based upconverter 342 electrically connected 332 to the transmit amplifier 112. The upconverter 342 may be configured to upconvert the frequency of an outgoing signal to be transmitted by the MMIC front end module 100.

[0077] The MMIC front-end module 100 may further include a silicon-based down-converter 343 electrically connected 333 to the receive amplifier 113 . The down-converter 343 may be configured to down-convert the frequency of an incoming signal received by the MMIC front-end module 100 .

[0078] The up-converter 342 and the down-converter 343 may be mixers. The up-converter 342 and the down-converter 343 may be connected to a local oscillator that outputs a predictable oscillation signal. The up-converter 342 may convert an outgoing signal, which is an IF signal, into a corresponding RF signal. The down-converter 343 may convert an incoming signal, which is an RF signal, into a corresponding IF signal. <RF。

[0079] The silicon-based upconverter 342 and the silicon-based downconverter 343 may be integrally formed in the silicon substrate 120. The silicon-based upconverter 342 and the silicon-based downconverter 343 may be formed in an added silicon structure rather than being originally part of the silicon substrate 120. Such an added silicon structure may be deposited, for example, by CVD or a similar deposition technique.

[0080] Figure 4 The MMIC front-end module 100 is shown, further comprising an antenna 451 . The antenna 451 may be configured to transmit and receive wireless signals. The transmit / receive switch 130 may be electrically connected 453 to the antenna 451 .

[0081] The antenna 451 may be configured to transmit and receive electromagnetic wireless signals. The antenna 451 may be configured and / or optimized to transmit and receive wireless signals with a frequency in the range of 10 MHz to 100 GHz, preferably in the range of 24 GHz to 72 GHz.

[0082] Antenna 451 may be, for example, a dipole antenna, a monopole antenna, a patch antenna, or the like. Antenna 451 may be a multiple-input multiple-output (MIMO) antenna. Antenna 451 may include a perfect electric conductor (PEC). Antenna 451 may include metal. Antenna 451 may include a degenerately doped semiconductor, such as silicon. Antenna 451 may include a dielectric material.

[0083] The antenna 451 may be supported by the silicon substrate 120. The antenna 451 may be integrally formed in the silicon substrate 120.

[0084] The antenna 451 may be an array antenna including a plurality of antenna array elements 455 .

[0085] Figure 5 A gallium nitride structure 110 is shown including a vertical nanowire structure 516 arranged perpendicular to a silicon substrate 120 .

[0086] The vertical nanowire structure 516 may include gallium nitride or consist essentially of gallium nitride. The vertical nanowire structure 516 may include aluminum nitride or consist essentially of aluminum nitride. The gallium nitride structure 110 may include a plurality of vertical nanowire structures 516. The vertical nanowire structure 516 may be formed on the silicon substrate 120.

[0087] The GaN structure 110 may include a GaN layer 517 and an Al x Ga 1-x N layer 518, where 0≤x≤0.95. The gallium nitride layer 517 may be located on the Al x Ga 1-x On the N layer 518. Al x Ga 1-x The N layer 518 may surround the vertical nanowire structure 516 laterally and vertically.

[0088] Al x Ga 1-x The N layer 518 may include a continuous or discrete gradient. A continuous gradient may be understood as a gradient between the Al x Ga 1-x At different positions along the vertical direction in the N layer 518, the value x changes substantially continuously. Similarly, the discrete gradient can be understood as the value of the Al x Ga 1-x At different positions along the vertical direction in the N layer 518, the value x changes with relatively large discrete steps, for example, each step length is -0.2.

[0089] The gallium nitride structure 110 may include an aluminum nitride layer 519. The aluminum nitride layer 519 may be located in a direction perpendicular to the substrate 120. x Ga 1-x Below the N layer 518 .

[0090] The gallium nitride structure 110 may further be understood as a "semiconductor layer structure" within the context of filed European patent application number 19215267.6. See the text regarding "first aspect" in the Summary of the Invention. See also Figures 1 to 4 and corresponding description sections. The identified subject matter is incorporated herein by reference.

[0091] HEMTs 114 and 115 may further be understood as HEMTs according to the European patent application No. 19215267.6 filed in the same manner. See the text regarding the “Second Aspect” in the Summary of the Invention. See also Figures 5 and 6 and corresponding description sections. The identified subject matter is incorporated herein by reference.

[0092] Generally speaking, electrical connections 132, 133, 333, 332, 453 and other connections not represented by numbers (e.g., connections within amplifiers 112, 113) can be understood as any physical connection suitable for current transmission. The connections can be formed as part of conventional back-end-of-line (BEOL) processing of silicon integrated circuits.

[0093] The electrical connectors 132, 133, 333, 332, 453 may include a metal material, such as aluminum, copper, palladium, silver, and / or gold, as well as alloys thereof. For example, the alloy used for the electrical connectors 132, 133, 333, 332, 453 may include aluminum and copper, or alternatively palladium and gold. The electrical connectors 132, 133, 333, 332, 453 may be implemented as a degenerately doped semiconductor, such as silicon.

[0094] A method for forming the MMIC front-end module 100 may include:

[0095] Providing a silicon substrate 120 covered with a gallium nitride layer structure;

[0096] Etching a gallium nitride structure 110 or a plurality of gallium nitride islands 211 and 212 from the gallium nitride layer structure;

[0097] Optionally, a polysilicon structure is deposited onto the silicon substrate 120 by CVD;

[0098] forming silicon-based devices 130, 342, 343 in a silicon substrate 120 or a deposited polysilicon structure;

[0099] GaN HEMT devices 114 , 115 are formed in the GaN structure 110 or the plurality of GaN islands 211 , 212 .

[0100] Forming metal layers, vias, and interconnects to connect the silicon-based devices 130, 342, 343 to the GaN HEMT devices; and

[0101] The MMIC front-end module 100 is passivated by, for example, deposition.

[0102] The MMIC front-end module 100 can be configured for 5th Generation New Radio (5G NR) communications. The MMIC front-end module 100 can be configured for Bluetooth communications. The MMIC front-end module 100 can be part of a network interconnection point (e.g., a wireless base station). The MMIC front-end module 100 can be part of a network device such as a mobile device, a computer, an Internet of Things (IoT) device, etc. Those skilled in the art will appreciate that the present invention is not limited in any way to the above examples. The MMIC front-end module 100 can be configured for frequencies in the range of 10 MHz to 100 GHz, preferably in the range of 24 GHz to 72 GHz. When the MMIC front-end module 100 is configured for Bluetooth communications, the MMIC front-end module 100 can alternatively be configured for frequencies in the range of 1 GHz to 3 GHz, preferably in the range of 2.4 GHz to 2.5 GHz.

[0103] Additionally, variations to the disclosed embodiments can be understood and effected by the skilled artisan in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims.

Claims

1. A monolithic microwave integrated circuit (MMIC) front-end module, comprising: A gallium nitride structure supported by a silicon substrate, wherein the gallium nitride structure supported by the silicon substrate comprises a first gallium nitride island and a second gallium nitride island, wherein the first gallium nitride island and the second gallium nitride island are physically separated and laterally arranged together on the silicon substrate; A silicon-based transmit / receive switch with transmit and receive modes; a transmit amplifier configured to amplify an outgoing signal to be transmitted by the MMIC front-end module, wherein the transmit amplifier is electrically connected to the transmit / receive switch, wherein the transmit amplifier comprises a gallium nitride high electron mobility transistor (HEMT) formed in the gallium nitride structure; and a receive amplifier configured to amplify an incoming signal received by the MMIC front-end module, wherein the receive amplifier is electrically connected to the transmit / receive switch, wherein the receive amplifier comprises a gallium nitride HEMT formed in the gallium nitride structure.

2. The MMIC front-end module according to claim 1, wherein: The transmit amplifier includes a plurality of HEMTs formed in the gallium nitride structure.

3. The MMIC front-end module according to claim 1, wherein: The receive amplifier includes a plurality of HEMTs formed in the gallium nitride structure.

4. The MMIC front-end module according to claim 1, further comprising: a silicon-based upconverter electrically connected to the transmit amplifier, wherein the upconverter is configured to upconvert the frequency of the outgoing signal to be transmitted by the MMIC front-end module; and A silicon-based downconverter is electrically connected to the receiving amplifier, wherein the downconverter is configured to downconvert the frequency of an incoming signal received by the MMIC front-end module.

5. The MMIC front-end module according to claim 1, wherein: The gallium nitride HEMT of the transmit amplifier is formed in the first gallium nitride island, and wherein the gallium nitride HEMT of the receive amplifier is formed in the second gallium nitride island.

6. The MMIC front-end module according to claim 1, wherein: The lateral dimensions of the first gallium nitride island and the second gallium nitride island are in a range of 0.1 μm to 10 μm.

7. The MMIC front-end module according to claim 1, wherein: The lateral size of the gallium nitride structure is in the range of 0.1 μm to 10 μm.

8. The MMIC front-end module according to claim 1, further comprising an antenna configured to transmit and receive wireless signals, wherein The transmit / receive switch is electrically connected to the antenna.

9. The MMIC front-end module according to claim 8, wherein: The antenna is supported by the silicon substrate.

10. The MMIC front-end module according to claim 8, wherein: The antenna is an array antenna including a plurality of antenna array elements.

11. The MMIC front-end module according to claim 1, wherein: The gallium nitride structure includes a vertical nanowire structure arranged perpendicular to the silicon substrate.

12. The MMIC front-end module according to claim 1, wherein: The gallium nitride structure includes a gallium nitride layer and an Al x Ga 1-x N layers, where 0≤x≤0.

95.

13. The MMIC front-end module according to claim 1, wherein: The gallium nitride structure includes an aluminum nitride layer.

14. The MMIC front-end module according to claim 1, wherein: The silicon-based transmit / receive switch is integrally formed in the silicon substrate, or the silicon-based transmit / receive switch is supported by the silicon substrate.

15. A monolithic microwave integrated circuit (MMIC) front-end module, comprising: A gallium nitride structure supported by a silicon substrate, wherein the gallium nitride structure includes a vertical nanowire structure arranged perpendicular to the silicon substrate; A silicon-based transmit / receive switch with transmit and receive modes; a transmit amplifier configured to amplify an outgoing signal to be transmitted by the MMIC front-end module, wherein the transmit amplifier is electrically connected to the transmit / receive switch, wherein the transmit amplifier comprises a gallium nitride high electron mobility transistor (HEMT) formed in the gallium nitride structure; and a receive amplifier configured to amplify an incoming signal received by the MMIC front-end module, wherein the receive amplifier is electrically connected to the transmit / receive switch, wherein the receive amplifier comprises a gallium nitride HEMT formed in the gallium nitride structure.

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