LED chip manufacturing method for improving chip reliability

Abstract

The application discloses an LED chip manufacturing method for improving chip reliability, and relates to the technical field of LED chips.The LED chip manufacturing method for improving chip reliability comprises the following steps: providing a chip base layer, manufacturing an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on the chip base layer, forming an LED wafer, preparing a semi-finished product, performing first-step quality inspection work, performing cutting treatment, forming an LED chip epitaxial layer, manufacturing an electrode of a single LED chip, performing second-step quality inspection work, and packaging and warehousing the LED chips that pass the quality inspection, and discarding the LED chips that fail the quality inspection.The LED chip manufacturing method for improving chip reliability can guarantee the overall heat resistance of the manufactured LED chips by adding fumigation liquid in the manufacturing process, the nano vinegar and copper acetate aqueous solution can improve the hardness and heat resistance of the deposited SiON, so that the heat resistance of the LED chip in use can be guaranteed, and the reliability of the LED chip is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of LED chip, in particular to a LED chip manufacturing method for improving chip reliability. BACKGROUND

[0002] A light emitting diode is a kind of solid-state semiconductor electronic element capable of emitting light, which is widely used in technical fields such as indicator light, display screen and lighting due to its high light emitting efficiency, wide color range and long service life. In the traditional LED manufacturing method, an epitaxial layer is first grown on a substrate by metal organic chemical vapor deposition process, then an exposed electrode is formed by evaporation and photolithography, and then cutting is performed to obtain a plurality of single LED chips.

[0003] In the prior art, during the manufacturing process of the LED chip, there are often damaged areas in the semi-finished LED chip, which leads to the phenomenon that the processed LED chip cannot operate normally, resulting in invalidation of the subsequent processing and manufacturing, and greatly reducing the efficiency of the LED chip manufacturing. In addition, the existing LED chip manufacturing process does not process the LED chip, which reduces the chip reliability of the LED chip to a certain extent. In view of this, the present application provides a LED chip manufacturing method for improving chip reliability. SUMMARY

[0004] (I) Technical problem to be solved

[0005] In view of the deficiencies of the prior art, the present application provides a LED chip manufacturing method for improving chip reliability, which solves the problems mentioned in the background art.

[0006] (II) Technical scheme

[0007] To achieve the above purpose, the present application is implemented by the following technical scheme: a LED chip manufacturing method for improving chip reliability, the LED chip manufacturing method comprising the following steps:

[0008] S1, providing a chip base layer, and manufacturing an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer on the chip base layer for forming an LED wafer;

[0009] S2, preparation of a semi-finished product, deposition of a CBL electron blocking layer, patterning of the CBL electron blocking layer, evaporation of an ITO transparent conductive layer, deposition of a SiON film, fumigation treatment, etching of the SiON film with phosphoric acid, ITO patterning and then removing the adhesive, ICP photolithography, ICP etching to expose the N region, heating treatment, ICP etching to remove the adhesive, removal of the SiON film with phosphoric acid, ITO alloying and deposition of a SiO2 protective layer to obtain a semi-finished product;

[0010] S3, the first step of quality inspection, the quality inspection work is carried out on the processed semi-finished product;

[0011] S4, cutting treatment, the substrate is cut according to the size of the single LED chip;

[0012] S5, the formation of the LED chip epitaxial layer, the LED chip epitaxial layer is formed on the substrate;

[0013] S6, the electrode manufacturing of single LED chip, the electrodes of multiple single LED chips are formed;

[0014] S7, the second step of quality inspection, the quality inspection work is carried out on the single LED chip;

[0015] S8, the LED chips that pass the quality inspection are packaged and stored, and the unqualified LED chips are discarded.

[0016] Optionally, in the process of S1 forming the LED wafer, the processing environment temperature of the LED wafer is 70-90 degrees Celsius, and the dust-free standard is 0.1um concentration≤10 and 0.2um concentration≤2.

[0017] Optionally, the fumigation treatment in S2 needs to be carried out on the LED wafer with the ITO transparent conductive layer, and the temperature of the fumigation liquid is 115-130 degrees Celsius.

[0018] Optionally, the fumigation liquid is composed of nano vinegar, dispersing agent and distilled water, the mass of the distilled water is 92%-95% of the total mass of the fumigation liquid, the dispersing agent is copper acetate aqueous solution, by adding the fumigation liquid in the manufacturing process, the overall heat resistance of the processed LED chip can be ensured, the nano vinegar and the copper acetate aqueous solution can improve the hardness and heat resistance of the deposited SiON, so as to ensure the heat resistance of the LED chip in use, thereby improving the light emitting efficiency of the LED chip.

[0019] Optionally, in S2, the LED wafer with the exposed N region is heated, the heating temperature is 90-95 degrees Celsius, and the heating mode is oil bath heating.

[0020] Optionally, in S3, the first step of quality inspection, the appearance of the semi-finished product in S2 is detected to detect whether there is a damaged part, if there is no damage, the next step is carried out; if there is a damaged part, the damaged part of the LED wafer is insulated, the insulation treatment is green oil smearing on the damaged part of the LED wafer, and then the green oil smearing is cured by the ultraviolet lamp, so that the damaged part will not appear short circuit effect, the utilization rate of the whole LED wafer can be ensured, thereby improving the processing efficiency of the LED chip.

[0021] Optionally, the S3 further comprises, after the green oil painting is cured by the ultraviolet light, manually spraying a mark paint on the ultraviolet light curing area.

[0022] Optionally, the S4 comprises cutting the substrate, and the cutting method is micro stress cutting, and the LED wafer with the mark paint area is sorted out, and the sorted out LED wafer with the mark paint area is discarded, the mark paint on the damaged area enables the staff to find the damaged area in the first time, and the micro stress cutting of the damaged area can avoid the short circuit of the LED wafer caused by the metal powder in the ordinary cutting process, and the processing efficiency of the LED chip is maximally improved.

[0023] Optionally, the second step of the S7 is quality inspection, and the unqualified LED chip is sorted out.

[0024] Optionally, the S4 further comprises polishing the edge of the LED wafer after the micro stress cutting, and the LED wafer is covered during the polishing.

[0025] (Three) beneficial effects

[0026] The application provides an LED chip manufacturing method for improving chip reliability.

[0027] (1) The LED chip manufacturing method for improving chip reliability can ensure the heat resistance of the processed LED chip by adding fumigation liquid in the manufacturing process, the nanometer vinegar and copper acetate aqueous solution can improve the hardness and heat resistance of the deposited SiON, so that the heat resistance of the LED chip in use can be ensured, and the reliability of the LED chip is improved.

[0028] (2) The LED chip manufacturing method for improving chip reliability can prevent the damaged part from short circuit by green oil painting and ultraviolet light curing, so that the utilization rate of the entire LED wafer is ensured, and the processing efficiency of the LED chip is improved.

[0029] (3) The LED chip manufacturing method for improving chip reliability can enable the staff to find the damaged area in the first time by marking the damaged area with paint, and the micro stress cutting of the damaged area can avoid the short circuit of the LED wafer caused by the metal powder in the ordinary cutting process, and the processing efficiency of the LED chip is maximally improved. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1The manufacturing process of the present application is shown in the figure. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present application will be clearly and completely described in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0032] It should be noted that all directionality indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directionality indications also change accordingly.

[0033] Embodiment 1

[0034] Please refer to Figure 1 The present application provides a technical solution: an LED chip manufacturing method for improving chip reliability, the LED chip manufacturing method comprising the following steps:

[0035] S1, providing a chip base layer, and manufacturing an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on the chip base layer to form an LED wafer, wherein the processing environment temperature of the LED wafer during the formation of the LED wafer is 70-90 degrees Celsius, and the dust-free standard is 0.1um concentration≤10 and 0.2um concentration≤2;

[0036] S2, preparation of a semi-finished product, deposition of a CBL electron blocking layer, patterning of the CBL electron blocking layer, evaporation of an ITO transparent conductive layer, deposition of a SiON film, fumigation treatment, etching and patterning of the SiON film by using phosphoric acid, ITO patterning, ICP lithography, ICP etching to expose the N region, heating treatment, ICP etching and delamination, removal of the SiON by using phosphoric acid, ITO alloying and deposition of a SiO2 protective layer, to obtain the semi-finished product, wherein the fumigation treatment in S2 needs to fumigate and process the LED wafer with the evaporated ITO transparent conductive layer, the temperature of the fumigation liquid is 115 degrees Celsius, the fumigation liquid is composed of nano vinegar, a dispersing agent and distilled water, the mass of the distilled water accounts for 92%-95% of the total mass of the fumigation liquid, the LED wafer with the exposed N region is subjected to heating treatment, the heating temperature is 90-95 degrees Celsius, and the heating mode is oil bath heating;

[0037] S3, the first step of quality inspection, the quality inspection of the processed semi-finished product, the first step of quality inspection in S3, the appearance of the semi-finished product in S2 is detected, whether the appearance has a damaged part is detected, if there is no damage, the next step is carried out; if there is a damaged part, the damaged part of the LED wafer is insulated, the damaged part of the LED wafer is coated with green oil, and then the green oil is cured by ultraviolet light. After the green oil is cured by ultraviolet light, the area cured by ultraviolet light is manually sprayed with a marking paint spray;

[0038] S4, cutting treatment, the substrate is cut according to the size of the single LED chip, the substrate is cut in S4, the cutting method is micro stress cutting, and the LED wafer with the marking paint spray area is sorted out, the LED wafer with the marking paint spray area is sorted out and discarded, the edge of the LED wafer is polished after micro stress cutting, and the LED wafer is covered during polishing;

[0039] S5, the formation of the LED chip epitaxial layer, the LED chip epitaxial layer is formed on the substrate;

[0040] S6, electrode manufacturing of single LED chip, forming electrodes of a plurality of single LED chips;

[0041] S7, the second step of quality inspection, the quality inspection of the single LED chip, the second step of quality inspection in S7 tests the single LED chip, and the unqualified LED chip is sorted out;

[0042] S8, the LED chip qualified by quality inspection is packaged and stored, and the unqualified LED chip is discarded.

[0043] Embodiment 2:

[0044] Please refer to Figure 1 The application provides a technical solution: an LED chip manufacturing method for improving chip reliability, the LED chip manufacturing method comprising the following steps:

[0045] S1, providing a chip base layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer are manufactured on the chip base layer, for forming an LED wafer, in the process of forming the LED wafer, the processing environment temperature of the LED wafer is 70-90 degrees Celsius, and the dust-free standard is 0.1um concentration≤10 and 0.2um concentration≤2;

[0046] S2, preparation of a semi-finished product, deposition of a CBL electron blocking layer, patterning of the CBL electron blocking layer, evaporation of an ITO transparent conductive layer, deposition of a SiON film, fumigation treatment, etching of the SiON with phosphoric acid, ITO patterned post-stripping, ICP lithography, ICP etching to expose the N region, heating treatment, ICP etching stripping, removal of SiON with phosphoric acid, ITO alloying and deposition of a SiO2 protective layer, to obtain a semi-finished product, the fumigation treatment in S2 needs to be carried out on the LED wafer with the evaporated ITO transparent conductive layer, the temperature of the fumigation liquid is 130 degrees Celsius. The fumigation liquid is composed of nano vinegar, dispersing agent and distilled water, the mass of the distilled water accounts for 92%-95% of the total mass of the fumigation liquid, the heating treatment is carried out on the LED wafer with the exposed N region, the heating temperature is 90-95 degrees Celsius, and the heating mode is oil bath heating;

[0047] S3, first step of quality inspection, the semi-finished product after processing is subjected to quality inspection, the first step of quality inspection in S3 is carried out on the semi-finished product in S2 to detect its appearance, whether there is a damaged part, if there is no damage, the next step is carried out; if there is a damaged part, the LED wafer with the damaged part is subjected to insulation treatment, the green oil is applied to the damaged part of the LED wafer, and then the green oil is cured by ultraviolet light. After the green oil is cured by ultraviolet light, the area cured by ultraviolet light is marked by manual spraying paint;

[0048] S4, cutting treatment, the substrate is cut according to the size of the single LED chip, the substrate is cut in S4, the cutting mode is micro stress cutting, and the LED wafer with the marked paint area is sorted out. The LED wafer with the marked paint area is discarded. The edge of the LED wafer is polished after micro stress cutting, and the LED wafer is covered during polishing;

[0049] S5, formation of an LED chip epitaxial layer, an LED chip epitaxial layer is formed on the substrate;

[0050] S6, electrode production of a single LED chip, electrodes of a plurality of single LED chips are formed;

[0051] S7, second step of quality inspection, the single LED chip is subjected to quality inspection, the second step of quality inspection in S7 tests the single LED chip, and the unqualified LED chip is sorted out;

[0052] S8, packaging and warehousing of the qualified LED chip, and discarding the unqualified LED chip.

[0053] The LED chip manufacturing method for improving the reliability of the LED chip can ensure the heat resistance of the whole LED chip by adding fumigation liquid in the manufacturing process. The nano vinegar and copper acetate aqueous solution can improve the hardness and heat resistance of the deposited SiON, thereby ensuring the heat resistance of the LED chip during use, and improving the reliability of the LED chip. In addition, the damaged part is coated with green oil and cured by a violet light, so that the damaged part does not appear short circuit effect, which can ensure the utilization rate of the whole LED wafer, thereby improving the processing efficiency of the LED chip.

[0054] Although embodiments of the present application have been shown and described, it would be appreciated by those skilled in the art that changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the application, and the scope of the present application is defined by the appended claims and their equivalents.

Claims

1. A method for improving the reliability of LED chips, comprising: The LED chip manufacturing method comprises the following steps: ​ S1, providing a chip base layer, and manufacturing an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on the chip base layer to form an LED wafer; S2, preparation of a semi-finished product, deposition of a CBL electron blocking layer, patterning of the CBL electron blocking layer, evaporation of an ITO transparent conductive layer, deposition of a SiON film, fumigation treatment, etching and patterning of the SiON film by using phosphoric acid, ITO patterning, ICP lithography, ICP etching to expose the N region, heating treatment, ICP etching, removal of the SiON by using phosphoric acid, ITO alloying and deposition of a SiO2 protective layer, to obtain the semi-finished product; S3, quality inspection of the first step, and quality inspection of the semi-finished product after processing; S4, cutting treatment, and cutting the substrate according to the size of the single LED chip; S5, formation of an LED chip epitaxial layer, and forming the LED chip epitaxial layer on the substrate; S6, electrode manufacturing of the single LED chip, and forming electrodes of a plurality of single LED chips; S7, quality inspection of the second step, and quality inspection of the single LED chip; S8, packaging and warehousing of the LED chip that passes the quality inspection, and waste treatment of the unqualified LED chip; In S2, fumigation treatment is required for the LED wafer with the evaporated ITO transparent conductive layer, the temperature of the fumigation liquid is 115-130 degrees Celsius, the fumigation liquid is composed of nano vinegar, a dispersing agent and distilled water, and the mass of the distilled water accounts for 92%-95% of the total mass of the fumigation liquid; In S3, the first step of quality inspection is performed, and the appearance of the semi-finished product in S2 is detected to check whether there is any damaged part, if not, the next step is performed, and if there is any damaged part, insulation treatment is performed on the damaged part of the LED wafer, the damaged part of the LED wafer is coated with green oil, and then the green oil is cured by a violet light lamp; In S4, the substrate is cut by micro stress cutting, and the LED wafer with a marked paint area is sorted out and treated as waste.

2. The LED chip manufacturing method for improving chip reliability according to claim 1, characterized in that: In the process of forming the LED wafer in S1, the processing environment temperature of the LED wafer is 70-90 degrees Celsius, and the dust-free standard is 0.1um concentration≤10 and 0.2um concentration≤2.

3. The method of claim 1, wherein the method further comprises: forming a plurality of metal pillars on the substrate; and forming a plurality of metal pillars on the LED chip. In S2, the LED wafer with the exposed N region is heated, the heating temperature is 90-95 degrees Celsius, and the heating mode is oil bath heating.

4. The method of claim 1, wherein the method further comprises: forming a plurality of metal pillars on the substrate; and forming a plurality of metal pillars on the LED chip. In S3, further including, after the green oil coating is cured by the violet light lamp, a mark paint is sprayed on the cured area by manual operation.

5. The method of claim 1, wherein the method further comprises: In S7, the second step of quality inspection is performed on the single LED chip, and the unqualified LED chip is sorted out. ​ 6. The LED chip manufacturing method for improving chip reliability according to claim 5, characterized in that: In S4, further including, after the micro stress cutting, the edge of the LED wafer is polished, and the LED wafer is covered during the polishing process.

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