Display panel and manufacturing method thereof

Abstract

The present application discloses a display panel and a method for manufacturing the same. The display panel of the present application includes a substrate, a light-emitting layer, a photoresist layer, and a first electrode. The light-emitting layer is disposed on the substrate, the photoresist layer is disposed on a side of the light-emitting layer away from the substrate, and the first electrode is disposed on a side of the photoresist layer away from the substrate. By retaining a portion of the photoresist layer, the present application can eliminate the step of stripping the photoresist layer during the display panel manufacturing process, thereby avoiding partial stripping of the light-emitting layer caused by stripping the photoresist layer, thereby improving the light-emitting characteristics of the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof. Background Art

[0002] Quantum dot light emitting diodes (QLEDs) have garnered extensive attention and research in the display field due to their unique optoelectronic properties, such as continuously tunable emission wavelength depending on size and composition, narrow emission spectrum, high fluorescence efficiency, and excellent stability. Furthermore, QLED displays offer advantages unattainable by LCDs, such as wide viewing angles, high contrast, fast response times, and flexibility, making them poised to become the next generation of display technology.

[0003] Among them, if the luminescent material wants to be applied to actual devices, it needs to go through a patterning process. This patterning process will adopt different methods due to the different properties of the materials. However, due to its high boiling point, the quantum dots of QLED are difficult to achieve the same evaporation method as organic light-emitting diodes (OLED). The commonly used methods are inkjet printing, contact printing and photolithography. Among them, photolithography can realize the preparation of quantum dot high-resolution electroluminescent devices. Usually, photoresist is used in conjunction with the yellow light process to realize the patterning of the quantum dot light-emitting layer, thereby realizing the preparation of full-color quantum dot display devices. However, during the peeling process of the photoresist layer, the quantum dot light-emitting layer will be partially peeled off, thereby affecting the luminescence characteristics of the quantum dot display device. Summary of the Invention

[0004] The present application provides a display panel and a method for manufacturing the same, in order to solve the technical problem in the prior art that the light-emitting layer may be partially peeled off during the photoresist layer peeling process, thereby affecting the light-emitting characteristics of the display panel. The present application provides a display panel, comprising:

[0005] substrate;

[0006] a light-emitting layer, disposed on the substrate;

[0007] a photoresist layer, disposed on a side of the light-emitting layer away from the substrate, and

[0008] The first electrode is arranged on a side of the photoresist layer away from the substrate.

[0009] Optionally, in some embodiments of the present application, the thickness of the photoresist layer is 1 nanometer to 15 nanometers.

[0010] Optionally, in some embodiments of the present application, the photoresist layer is obtained by removing part of the material of a preset photoresist layer pre-disposed on the light-emitting layer.

[0011] Optionally, in some embodiments of the present application, the thickness of the preset photoresist layer is 0.3 microns to 1.5 microns.

[0012] Optionally, in some embodiments of the present application, the thickness of the photoresist layer is 1 nanometer to 15 nanometers.

[0013] Optionally, in some embodiments of the present application, the light-emitting layer includes a first light-emitting portion and a second light-emitting portion provided in the same layer, and the photoresist layer includes a first photoresist portion and a second photoresist portion provided in the same layer;

[0014] The first photoresist portion is provided corresponding to the first light-emitting portion and covers at least the first light-emitting portion. The second photoresist portion is provided corresponding to the second light-emitting portion and covers at least the second light-emitting portion.

[0015] Optionally, in some embodiments of the present application, there is a gap between the first light-emitting portion and the second light-emitting portion, and the second photoresist portion fills the gap.

[0016] Optionally, in some embodiments of the present application, the first photoresist portion protrudes from the first light-emitting portion and is arranged on an end face close to the second light-emitting portion.

[0017] Optionally, in some embodiments of the present application, the first photoresist portion and the second photoresist portion are made of different materials;

[0018] The first photoresist portion has a high light transmittance corresponding to the light-emitting color of the first light-emitting portion, and the second photoresist portion has a high light transmittance corresponding to the light-emitting color of the second light-emitting portion.

[0019] Optionally, in some embodiments of the present application, the first photoresist portion and the second photoresist portion have different thicknesses;

[0020] In which, the thickness of the first photoresist portion and the second photoresist portion is adjusted according to at least one of the thickness of the first light-emitting portion and the second light-emitting portion, the luminous brightness of the first light-emitting portion and the second light-emitting portion, the luminous lifetime of the first light-emitting portion and the second light-emitting portion, and the electron blocking efficiency of the first photoresist portion and the second photoresist portion.

[0021] Optionally, in some embodiments of the present application, the light-emitting layer further includes a third light-emitting portion, the photoresist layer further includes a third photoresist portion, the third photoresist portion is arranged corresponding to the third light-emitting portion, and the third photoresist portion at least covers the third light-emitting portion;

[0022] Among them, the first light-emitting portion is a red light-emitting portion, the second light-emitting portion is a green light-emitting portion, and the third light-emitting portion is a blue light-emitting portion. The thickness of the first photoresist portion is greater than the thickness of the third photoresist portion, and the thickness of the second photoresist portion is greater than the thickness of the first photoresist portion.

[0023] Optionally, in some embodiments of the present application, the display panel further includes a hole injection layer, a hole transport layer, and an electron transport layer;

[0024] The hole injection layer is located on a side of the light-emitting layer close to the substrate, the hole transport layer is located between the hole injection layer and the light-emitting layer, and the electron transport layer is located between the photoresist layer and the first electrode.

[0025] Accordingly, the present application provides a method for manufacturing a display panel, which includes:

[0026] providing a substrate;

[0027] sequentially stacking a luminescent material and a photoresist material on the substrate;

[0028] performing an exposure process on a portion of the photoresist material, and performing a development process on the photoresist material using a first solution to form a photoresist layer;

[0029] removing the light-emitting material not covered by the photoresist layer using a second solution to form a light-emitting layer;

[0030] removing a portion of material from a surface of the photoresist layer away from the light-emitting layer;

[0031] A first electrode layer is formed on a side of the photoresist layer away from the substrate.

[0032] Optionally, in some embodiments of the present application, the thickness of the photoresist layer after removing part of the material is 1 nanometer to 15 nanometers.

[0033] Optionally, in some embodiments of the present application, before the step of sequentially stacking a light-emitting material and a photoresist material on the substrate, the step further includes:

[0034] forming a second electrode on the substrate;

[0035] forming a hole injection layer on a side of the second electrode away from the substrate;

[0036] A hole transport layer is formed on a side of the hole injection layer away from the substrate.

[0037] Optionally, in some embodiments of the present application, before the step of forming the first electrode layer on the side of the photoresist layer away from the substrate, the step further includes:

[0038] An electron transport layer is formed on a side of the photoresist layer away from the substrate.

[0039] The present application also provides a method for manufacturing a display panel, which includes:

[0040] providing a substrate;

[0041] sequentially stacking a first light-emitting material and a first photoresist material on the substrate;

[0042] performing patterning on the first photoresist material and the first light-emitting material respectively to form a first photoresist portion and a first light-emitting portion, wherein the first photoresist portion at least covers the first light-emitting portion;

[0043] sequentially stacking a second luminescent material and a second photoresist material on the substrate;

[0044] performing patterning on the second photoresist material and the second light-emitting material respectively to form a second photoresist portion and a second light-emitting portion, wherein the second photoresist portion at least covers the second light-emitting portion;

[0045] sequentially stacking a third light-emitting material and a third photoresist material on the substrate;

[0046] performing patterning on the third photoresist material and the third light-emitting material to form a third photoresist portion and a third light-emitting portion, respectively, wherein the third photoresist portion at least covers the third light-emitting portion;

[0047] removing a portion of material of the first photoresist portion, the second photoresist portion, and the third photoresist portion away from the surface of the light-emitting layer;

[0048] A first electrode layer is formed on a side of the first photoresist portion, the second photoresist portion, and the third photoresist portion away from the substrate.

[0049] Optionally, in some embodiments of the present application, the thickness of the first photoresist portion after removing part of the material is 1 nanometer to 15 nanometers, the thickness of the second photoresist portion after removing part of the material is 1 nanometer to 15 nanometers, and the thickness of the third photoresist portion after removing part of the material is 1 nanometer to 15 nanometers.

[0050] The present application provides a display panel and a method for manufacturing the same. The display panel of the present application includes a substrate, a light-emitting layer, a photoresist layer, and a first electrode. The light-emitting layer is arranged on the substrate, the photoresist layer is arranged on the side of the light-emitting layer away from the substrate, and the first electrode is arranged on the side of the photoresist layer away from the substrate. In the process of preparing the light-emitting layer, the present application removes part of the material on the surface of the photoresist layer away from the light-emitting layer to achieve thinning of the photoresist layer, thereby retaining part of the photoresist layer. On the one hand, in the process of manufacturing the display panel, the step of stripping the photoresist layer can be omitted, thereby avoiding partial stripping of the light-emitting layer caused by stripping the photoresist layer, thereby improving the light-emitting characteristics of the display panel; on the other hand, the photoresist layer can adjust the electron transfer rate and maintain the electron-hole transfer balance, thereby improving the luminous efficiency of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0052] Figure 1 is a first structural schematic diagram of a display panel provided in this application;

[0053] Figure 2 This is a schematic diagram of the structure of the display panel provided by this application during the manufacturing process;

[0054] Figure 3 is a second structural schematic diagram of the display panel provided by this application;

[0055] Figure 4 is a third structural schematic diagram of the display panel provided by this application;

[0056] Figure 5 is a fourth structural schematic diagram of a display panel provided by this application;

[0057] Figure 6 is a fifth structural diagram of a display panel provided in this application;

[0058] Figure 7 This is a schematic flow chart of a first method for manufacturing a display panel provided in this application;

[0059] Figure 8 yes Figure 7 A schematic structural diagram of a display panel obtained by the manufacturing method shown;

[0060] Figure 9 is a schematic flow chart of a second method for manufacturing a display panel provided in this application;

[0061] Figures 10A-10G yes Figure 8 Schematic diagram of the structure obtained in each step of the production method shown. DETAILED DESCRIPTION

[0062] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the display panel in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the display panel.

[0063] See also Figure 1 , Figure 1 1 is a schematic diagram of the first structure of a display panel provided in this application. The display panel 100 provided in this application includes a substrate 10, a light-emitting layer 20, a photoresist layer 30, and a first electrode 40. The light-emitting layer 20 is disposed on the substrate 10. The photoresist layer 30 is disposed on the side of the light-emitting layer 20 that is away from the substrate 10. The first electrode 40 is disposed on the side of the photoresist layer 30 that is away from the substrate 10.

[0064] The thickness of the light emitting layer 20 is 5 nm to 100 nm. For example, the thickness of the light emitting layer 20 can be 5 nm, 10 nm, 20 nm, 50 nm, 80 nm, 90 nm, 100 nm, etc., and can be set according to the specifications of the display panel 100.

[0065] The material of the light-emitting layer 20 can be a quantum material such as quantum dots, quantum rods, or quantum plates. The quantum material can be one or more of cadmium quantum dots, indium phosphide, zinc selenide, or perovskite quantum dots. The light-emitting layer 20 can emit light of different colors, such as red, green, blue, yellow, and white. Furthermore, depending on the color of the light emitted, the light-emitting layer 20 can be made of the same quantum material, different quantum materials, or the same quantum material in different sizes, which is not specifically limited in this application.

[0066] When the display panel 100 is a top-emitting display panel, the photoresist layer 30 may be a transparent photoresist layer to avoid affecting light transmittance. The material of the photoresist layer 30 may be a positive photoresist material or a negative photoresist material, which is well known to those skilled in the art and will not be described in detail here. Typically, the material of the photoresist layer 30 may include a polymer material such as polymethyl methacrylate or polyimide.

[0067] The thickness of the photoresist layer 30 is 1 nm to 15 nm. For example, the thickness of the photoresist layer 30 can be 1 nm, 2 nm, 5 nm, 8 nm, 12 nm, 14 nm, 15 nm, etc.

[0068] For details, please refer to Figure 2 , Figure 2 In some embodiments of the present invention, the photoresist layer 30 is obtained by removing part of the material of the preset photoresist layer 50 pre-set on the light-emitting layer 20 .

[0069] The thickness of the preset photoresist layer 50 is 0.3 microns to 1.5 microns. Specifically, the thickness of the preset photoresist layer 50 can be 0.3 microns, 0.5 microns, 0.8 microns, 1 micron, 1.2 microns, 1.5 microns, etc. The thickness range of the preset photoresist layer 50 is obtained through extensive experimentation. It can avoid the difficulty of implementing the process of removing part of the preset photoresist layer 50 when the preset photoresist layer 50 is too thin, without wasting photoresist material.

[0070] It is understood that the photoresist layer 30 has a certain resistivity, which can adjust the transmission rate of electrons. The present application limits the thickness of the photoresist layer 30 to 1 to 15 nanometers. On the one hand, this can reasonably adjust the transmission rate of electrons and prevent the normal transmission of electrons from being affected by the photoresist layer 30 being too thick. On the other hand, during the preparation of the light-emitting layer 20, it is necessary to remove some of the material of the preset photoresist layer 50. Limiting the thickness of the photoresist layer 30 to 1 to 15 nanometers can prevent damage to the light-emitting layer 20 caused by thinning processes such as the photoresist layer 30 when the photoresist layer 30 is too thin.

[0071] In this application, the first electrode 40 is a cathode and is made of a high-conductivity material, which can be any one of Ag (silver), Al (aluminum), or Mg (magnesium) / Ag.

[0072] Furthermore, if the display panel 100 provided in the present application is a top-emitting display panel, the thickness of the first electrode 40 is 5 to 40 nanometers. For example, the thickness of the first electrode 40 can be 5 nanometers, 10 nanometers, 20 nanometers, 30 nanometers, 40 nanometers, etc. It is understood that when the display panel 100 is a top-emitting display panel, providing a thinner first electrode 40 can reduce the impact of the first electrode 40 on light transmittance.

[0073] If the display panel 100 provided in the present application is a bottom-emitting display panel, the thickness of the first electrode 40 is 80 nanometers to 150 nanometers. For example, the thickness of the first electrode 40 can be 80 nanometers, 90 nanometers, 120 nanometers, 140 nanometers, 150 nanometers, etc. It is understandable that when the display panel 100 is a bottom-emitting display panel, the first electrode 40 has no effect on the transmittance of the outgoing light. Therefore, a thicker first electrode 40 can be provided to reduce the surface resistance of the first electrode 40, thereby reducing the voltage drop caused by the surface resistance, avoiding the problem of large brightness difference between the periphery and the center of the display panel 100, and thus improving display uniformity.

[0074] Among them, the substrate 10 can be an array substrate. The substrate 10 includes but is not limited to a base substrate, a light shielding layer arranged on the base substrate, a buffer layer arranged on the base substrate and covering the light shielding layer, an active layer, a gate insulating layer and a gate layer stacked on the buffer layer from bottom to top, and an interlayer dielectric layer arranged above the buffer layer and covering the active layer, the gate insulating layer and the gate. Among them, the active layer includes a channel region and a source region and a drain region located on both sides of the channel region, and the source and drain arranged on the interlayer dielectric layer are electrically connected to the source region and the drain region respectively. The specific film layer structure of the substrate 10 is not shown in the drawings, but it can be understood that the structure of the array substrate and its specific arrangement are commonly used technical means in this field and will not be repeated here.

[0075] It should be noted that when the substrate 10 is an array substrate, the present application does not limit the structure of the thin film transistor formed in the array substrate. The thin film transistor can be a top-gate thin film transistor, a bottom-gate thin film transistor, a dual-gate thin film transistor, or a single-gate thin film transistor. The above embodiment is merely an illustration of the substrate 10 and should not be construed as limiting the present application.

[0076] In the present application, the display panel 100 further includes a pixel definition layer 11 and a second electrode 12. The pixel definition layer 11 is disposed on the substrate 10. The pixel definition layer 11 is located between the substrate 10 and the light-emitting layer 20. The pixel definition layer 11 has at least one through hole 110. The second electrode 12 is disposed in the through hole 110.

[0077] The pixel definition layer 11 is made of an organic material, which may be one or more of polyimide, polyethylene naphthalate, polyethylene terephthalate, polycarbonate, polyetherimide, and polyethersulfone.

[0078] In the present application, the second electrode 12 is an anode. The material used for the second electrode 12 can be any one or more of indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium gallium zinc tin oxide (IGZTO), indium tin oxide (ITO), indium zinc oxide (IZO), indium aluminum zinc oxide (IAZO), indium gallium tin oxide (IGTO), or antimony tin oxide (ATO). The above-mentioned transparent metal oxide materials have excellent conductivity and transparency, and are relatively thin, which is conducive to achieving a lightweight and thin display panel 100. In addition, the second electrode 12 can also adopt a laminated structure of ITO / Ag / ITO.

[0079] The present application forms a through hole 110 in the pixel definition layer 11 and then disposes the second electrode 12 within the through hole 110, thereby avoiding the problem of spike discharge caused by burrs on the second electrode 12. Furthermore, when the resolution of the display panel 100 is higher, the spacing between adjacent second electrodes 12 will also decrease. Disposing the second electrode 12 within the through hole 110 in the present application can avoid signal interference between adjacent second electrodes 12.

[0080] Furthermore, the present application defines individual sub-pixel units (not shown) within the display panel 100 by providing the pixel definition layer 11 and the through-hole 110. Furthermore, disposing the second electrode 12 within the through-hole 110 reduces the step difference created by the through-hole 110, facilitating the subsequent preparation of the hole injection layer 13 and the hole transport layer 14 over the entire surface, thereby simplifying the manufacturing process.

[0081] Furthermore, the display panel 100 further includes a hole injection layer 13, a hole transport layer 14, and an electron transport layer 15. The hole injection layer 13 is located on the second electrode 12. The hole injection layer 13 covers the second electrode 12. The hole transport layer 14 is located between the hole injection layer 13 and the light-emitting layer 20. The electron transport layer 15 is disposed on the side of the photoresist layer 30 away from the substrate 10.

[0082] It is understood that, under the action of a driving voltage applied to the display panel 100, the holes generated by the second electrode 12 migrate through the hole injection layer 13 and the hole transport layer 14 to the light-emitting layer 20. The electrons generated by the first electrode 40 also migrate, are injected into the electron transport layer 15, and migrate to the light-emitting layer 20. When the holes and electrons meet in the light-emitting layer 20, energy excitons are generated, which excite the light-emitting molecules to produce visible light.

[0083] The hole injection layer 13 may be made of a conductive polymer material or its derivatives. The conductive polymer material may be polythiophene or polyaniline. The thickness of the hole injection layer 13 is 10 to 60 nanometers. For example, the thickness of the hole injection layer 13 may be 10 nanometers, 15 nanometers, 20 nanometers, 30 nanometers, 40 nanometers, 50 nanometers, 60 nanometers, etc.

[0084] The material of the hole transport layer 14 can be any one of TFB (poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine)), Poly-TPD (polytriphenylamine), or PVK (polyvinylcarbazole). The thickness of the hole transport layer 14 is 10 to 50 nanometers. For example, the thickness of the hole transport layer 14 can be 10 nanometers, 15 nanometers, 20 nanometers, 30 nanometers, 40 nanometers, 45 nanometers, 50 nanometers, etc.

[0085] The material of the electron transport layer 15 is a metal oxide. The metal oxide can be ZnO (zinc oxide), Zn x Mg y O (zinc magnesium oxide), Zn x Al y O (zinc aluminum oxide) or Zn x Mg y The thickness of the electron transport layer 15 is 20 nm to 100 nm. For example, the thickness of the electron transport layer 15 can be 20 nm, 25 nm, 40 nm, 60 nm, 80 nm, 90 nm, 95 nm, 100 nm, etc.

[0086] In addition, it has been found in the current research work on QLEDs with a hole transport layer / quantum dot / electron transport layer structure that the charge mobility of the hole transport layer material is generally lower than the charge mobility of the electron transport layer material. Therefore, a hole injection layer 13 is provided in the display panel 100 provided in the present application to modify the second electrode 12 so that the holes from the second electrode 12 are smoothly injected into the hole transport layer 14, thereby improving the hole transmission efficiency and thus ensuring the electron-hole transmission balance. Moreover, the photoresist layer 30 in the present application has a certain resistivity, which can also reduce the electron transmission rate, further maintain the electron-hole transmission balance, and thus improve the luminous efficiency of the display panel 100.

[0087] The display panel 100 provided herein retains a portion of the photoresist layer 30 on the side of the light-emitting layer 20 facing away from the substrate 10. This allows the step of stripping the photoresist layer 30 to be omitted during the manufacture of the display panel 100, thereby preventing the partial stripping of the light-emitting layer 20 caused by stripping the photoresist layer 30, thereby improving the luminescence characteristics of the display panel 100. Furthermore, the photoresist layer 30 has a certain resistivity, which can adjust the electron transfer rate and maintain the electron-hole transfer balance, thereby improving the luminescence efficiency of the display panel 100.

[0088] Please continue reading Figure 1 In one embodiment of the present application, the light-emitting layer 20 includes a first light-emitting portion 21 and a second light-emitting portion 22 disposed in the same layer. The photoresist layer 30 includes a first photoresist portion 31 and a second photoresist portion 32 disposed in the same layer. The first photoresist portion 31 is disposed corresponding to the first light-emitting portion 21. The first photoresist portion 31 at least covers the first light-emitting portion 21. The second photoresist portion 32 is disposed corresponding to the second light-emitting portion 22. The second photoresist portion 32 at least covers the second light-emitting portion 22.

[0089] The materials of the first light-emitting portion 21 and the second light-emitting portion 22 can be the same or different. The first light-emitting portion 21 and the second light-emitting portion 22 can emit light of different colors. The thickness of the first light-emitting portion 21 and the second light-emitting portion 22 can be the same, or can be set according to the actual requirements for luminous brightness or luminous life. For example, taking the thickness of the first light-emitting portion 21 as an example, the thicker the first light-emitting portion 21, the longer its life; the thinner the first light-emitting portion 21, the more balanced its carriers and the higher the luminous efficiency.

[0090] It should be noted that the display panel 100 includes a plurality of sub-pixel units. Each sub-pixel unit includes at least one first light-emitting portion 21 or second light-emitting portion 22. In the present application, the first light-emitting portion 21 and the second light-emitting portion 22 are adjacent to each other, and the first photoresist portion 31 and the second photoresist portion 32 are adjacent to each other. This can reduce the space occupied by the first light-emitting portion 21 and the second light-emitting portion 22, thereby allowing for the provision of more sub-pixel units and improving the pixel resolution of the display panel 100.

[0091] Furthermore, in some embodiments of the present application, the first photoresist portion 31 and the second photoresist portion 32 are made of different materials. The first photoresist portion 31 has a high light transmittance corresponding to the luminous color of the first light-emitting portion 21, and the second photoresist portion 32 has a high light transmittance corresponding to the luminous color of the second light-emitting portion 22. It is understandable that the first photoresist portion 31 is arranged on the first light-emitting portion 21. The second photoresist portion 32 is arranged on the second light-emitting portion 22. When the display panel 100 is top-emitting, the first photoresist portion 31 and the second photoresist portion 32 will affect the transmittance of light. Light of different wavelengths has different transmittance in different materials. Therefore, based on the luminous color of the first light-emitting portion 21, a material with a higher transmittance of that color can be selected to form the first photoresist portion 31. At the same time, based on the luminous color of the second light-emitting portion 22, a material with a higher transmittance of that color can be selected to form the second photoresist portion 32.

[0092] Of course, in order to simplify the manufacturing process, in other embodiments, the material of the first photoresist portion 31 and the second photoresist portion 32 may be the same, and this application does not make any specific limitation on this.

[0093] In some embodiments of the present application, the first photoresist portion 31 and the second photoresist portion 32 have different thicknesses.

[0094] Specifically, the thicknesses of the first and second photoresist portions 31, 32 can be adjusted based on the luminance and lifetime of quantum materials having different luminescent colors. When the first and second luminescent portions 21, 22 emit different luminances, the first and second photoresist portions 31, 32 can have different thicknesses to adjust the light transmittance so that the first and second luminescent portions 21, 22 emit the same luminance through the photoresist layer 30, thereby improving the display quality of the display panel 100.

[0095] The thickness of the first photoresist portion 31 and the second photoresist portion 32 can also be adjusted based on the step difference caused by the thickness difference between the first light-emitting portion 21 and the second light-emitting portion 22 to ensure the flatness of the film layer. Specifically, when the first light-emitting portion 21 and the second light-emitting portion 22 have different thicknesses, the flatness of the film layer can be ensured by providing the first photoresist portion 31 and the second photoresist portion 32 with different thicknesses.

[0096] The thickness of the first photoresist portion 31 and the second photoresist portion 32 can also be adjusted accordingly based on the actual product's requirements for electron blocking efficiency. Because the first photoresist portion 31 and the second photoresist portion 32 both have a certain resistivity, they have a certain electron blocking efficiency. The electron blocking efficiency affects the electron-hole recombination efficiency, which in turn affects the luminous efficiency. Therefore, by adjusting the thickness of the first photoresist portion 31 and the second photoresist portion 32, the electron blocking efficiency of the first photoresist portion 31 and the second photoresist portion 32 can be adjusted.

[0097] For details, please refer to Figure 3 , Figure 3 : is a second structural diagram of the display panel provided by this application. Figure 1 The difference of the display panel 100 shown is that, in this embodiment, the light-emitting layer 20 further includes a third light-emitting portion 23, and the photoresist layer 30 further includes a third photoresist portion 33. The third photoresist portion 33 is provided corresponding to the third light-emitting portion 23. The third photoresist portion 33 at least covers the third light-emitting portion 23.

[0098] The first light-emitting portion 21 is a red light-emitting portion. The second light-emitting portion 22 is a green light-emitting portion. The third light-emitting portion 23 is a blue light-emitting portion. The thickness of the first photoresist portion 31 is greater than the thickness of the third photoresist portion 33. The thickness of the second photoresist portion 32 is greater than the thickness of the first photoresist portion 31.

[0099] Typically, the luminous efficiency of a green quantum material is greater than that of a red quantum material, which in turn is greater than that of a blue quantum material. This can also be understood as the luminous brightness of a green quantum material being greater than that of a red quantum material, which in turn is greater than that of a blue quantum material. Therefore, by setting the thickness of the first photoresist portion 31 to be greater than that of the third photoresist portion 33, and by setting the thickness of the second photoresist portion 32 to be greater than that of the first photoresist portion 31, the luminous brightness of the first, second, and third light-emitting portions 21, 22, and 23 after they pass through the photoresist layer 30 can be balanced, thus avoiding color shift.

[0100] See also Figure 4 , Figure 4 is a third structural diagram of the display panel provided in this application. Figure 1 The difference of the display panel 100 shown is that, in this embodiment, a gap 200 is provided between the first light emitting portion 21 and the second light emitting portion 22 , and the second photoresist portion 32 fills the gap 200 .

[0101] In this embodiment, a gap 200 is provided between the first light-emitting portion 21 and the second light-emitting portion 22 to avoid color mixing between the first light-emitting portion 21 and the second light-emitting portion 22 .

[0102] In addition, this embodiment uses a second photoresist portion 32 to fill the gap 200. First, the flatness of the light-emitting layer 20 and the photoresist layer 30 can be maintained, facilitating the subsequent placement of the electron transport layer 15 and the first electrode 40. Second, the second photoresist portion 32 can cover and protect the end faces of the first light-emitting portion 21 and the second light-emitting portion 22, further preventing color mixing between the first light-emitting portion 21 and the second light-emitting portion 22. Third, after the gap 200 is filled, the risk of direct connection between the electron transport layer 15 and the hole transport layer 14 can be reduced.

[0103] See also Figure 5 , Figure 5 : is a fourth structural diagram of the display panel provided by this application. Figure 3 The difference of the display panel 100 shown is that, in this embodiment, the first photoresist portion 31 is provided protruding from the end surface 210 of the first light-emitting portion 21 close to the second light-emitting portion 22, and the second photoresist portion 32 is connected to the end surface 210 of the first light-emitting portion 21 close to the second light-emitting portion 22. In other words, the second photoresist portion 32 completely fills the gap formed between the first light-emitting portion 21, the first photoresist portion 31, and the second light-emitting portion 22.

[0104] Specifically, during the manufacturing process of the display panel 100, the first light-emitting portion 21 can be processed through a process so that the first photoresist portion 31 protrudes from the first light-emitting portion 21 and is arranged near the end face 210 of the second light-emitting portion 22. This allows the first photoresist portion 31 to fully cover the first light-emitting portion 21 and provide sufficient protection. When manufacturing the second light-emitting portion 22, the first photoresist portion 31 can prevent the light-emitting material of the second light-emitting portion 22 from contaminating the first light-emitting portion 21. In addition, the protrusion of the end of the first photoresist portion 31 from the first light-emitting portion 21 further increases the distance between the first light-emitting portion 21 and the second light-emitting portion 22, which can effectively prevent color mixing.

[0105] See also Figure 6 , Figure 6 is a fifth structural diagram of a display panel provided in this application. Figure 4 The difference of the display panel 100 shown is that, in this embodiment, the first photoresist portion 31 protrudes from the first light-emitting portion 21 and is arranged close to the end face 210 of the second light-emitting portion 22, and the orthographic projection of the first photoresist portion 31 on the substrate 10 is adjacent to the orthographic projection of the second light-emitting portion 22 on the substrate 10.

[0106] This embodiment protects the first light-emitting portion 21 by simply providing the first photoresist portion 31 to fully cover the first light-emitting portion 21, thereby preventing color mixing between the first light-emitting portion 21 and the second light-emitting portion 22. Furthermore, because the orthographic projection of the first photoresist portion 31 on the substrate 10 is adjacent to the orthographic projection of the second light-emitting portion 22 on the substrate 10, direct connection between the electron transport layer 15 and the hole transport layer 14 is avoided. Furthermore, because no additional gap is provided between the first light-emitting portion 21 and the second light-emitting portion 22, the filling space of the second photoresist portion 32 is reduced, thereby reducing the material consumption of the second photoresist portion 32.

[0107] Please also refer to Figure 7 and Figure 8 , Figure 7 is a flow chart of the first method for manufacturing a display panel provided in this application, Figure 8 yes Figure 7 The manufacturing method of the display panel 100 specifically includes the following steps:

[0108] 101. Provide a substrate 10.

[0109] Specifically, in the display panel 100, the substrate 10 may be an array substrate. The manufacturing process of the array substrate is well known to those skilled in the art and will not be described in detail here.

[0110] 102. A luminescent material and a photoresist material are sequentially stacked on the substrate 10.

[0111] Specifically, first, a luminescent material is formed on the substrate 10 by spin coating, slit coating, electrostatic spraying, etc. Then, a photoresist material is formed on the luminescent material by spin coating, slit coating, electrostatic spraying, etc.

[0112] The luminescent material can be formed by mixing the quantum material with an organic solvent. The organic solvent can be toluene, chloroform, n-hexane or other solvents that can dissolve the quantum material, which is not specifically limited in this application.

[0113] The thickness of the photoresist material is set to be 0.3 micrometers to 1.5 micrometers. Specifically, the thickness of the photoresist material can be 0.3 micrometers, 0.5 micrometers, 0.8 micrometers, 1 micrometer, 1.2 micrometers or 1.5 micrometers.

[0114] 103 . Expose a portion of the photoresist material and develop the photoresist material using a first solution to form a photoresist layer 30 .

[0115] The photoresist material may be a positive photoresist material or a negative photoresist material well known to those skilled in the art, and this application does not impose any specific limitation on this.

[0116] In some embodiments of the present application, when the photoresist material is a positive photoresist material, step 103 specifically includes: first, exposing the portion of the photoresist material not covered by the mask. Then, immersing or spraying the photoresist material with a first solution to remove the exposed portion of the photoresist material. Finally, curing the remaining photoresist material to form a photoresist layer 30.

[0117] At this time, the first solution may be a solvent such as PGMEA (propylene glycol methyl ether acetate) that can dissolve a positive photoresist material.

[0118] In other embodiments of the present application, when the photoresist material is a negative photoresist material, step 103 specifically includes: first, exposing the portion of the photoresist material not covered by the mask. Then, immersing or spraying the photoresist material with a first solution to remove the portion of the photoresist material not exposed. Finally, curing the remaining photoresist material to form a photoresist layer 30.

[0119] At this time, the first solution may be an alkaline solution such as potassium hydroxide, tetramethylammonium hydroxide, potassium carbonate, or the like.

[0120] It should be noted that the drawings of this application are all illustrated using a positive photoresist material as an example, but this should not be understood as a limitation to this application.

[0121] 104 . Use a second solution to remove the light-emitting material not covered by the photoresist layer 30 to form a light-emitting layer 20 .

[0122] Specifically, the light-emitting material not covered by the photoresist layer 30 is immersed or sprayed with the second solution to remove the light-emitting material not covered by the photoresist layer 30 , thereby forming the light-emitting layer 20 .

[0123] The second solution may be toluene, chloroform, n-hexane or other solvents that can dissolve the luminescent material.

[0124] 105 . Remove part of the material of the photoresist layer 30 away from the surface of the light emitting layer 20 .

[0125] Specifically, a plasma etching process or a laser etching process can be used to thin the photoresist layer 30 to remove a portion of the material on the surface of the photoresist layer 30 away from the light-emitting layer 20. This eliminates the step of stripping the photoresist layer 30, avoids partial stripping of the light-emitting layer 20 caused by stripping the photoresist layer 30, and thus improves the light-emitting characteristics of the display panel 100.

[0126] The thickness of the photoresist layer 30 after part of the material is removed is 1 nm to 15 nm. Specifically, the thickness of the photoresist layer 30 after part of the material is removed can be 1 nm, 2 nm, 5 nm, 8 nm, 12 nm, 14 nm, 15 nm, etc.

[0127] Of course, in other embodiments, part of the material of the surface of the photoresist layer 30 away from the light-emitting layer 20 may be removed by other processes, and this application does not make any specific limitation on this.

[0128] 106 . Form a first electrode layer 40 on a side of the photoresist layer 30 away from the substrate 10 .

[0129] Specifically, the first electrode 40 is formed on the side of the photoresist layer 30 away from the substrate 10 by an evaporation or sputtering process.

[0130] Wherein, the first electrode 40 is made of a high-conductivity material. The high-conductivity material can be any one of Ag, Al, or Mg / Ag. If the display panel 100 provided in the present application is a top-emitting display panel, the thickness of the first electrode 40 is 5 nanometers to 40 nanometers. Specifically, the thickness of the first electrode 40 can be 5 nanometers, 10 nanometers, 20 nanometers, 30 nanometers, 40 nanometers, etc. If the display panel 100 provided in the present application is a bottom-emitting display panel, the thickness of the first electrode 40 is 80 nanometers to 150 nanometers. Specifically, the thickness of the first electrode 40 can be 80 nanometers, 90 nanometers, 120 nanometers, 140 nanometers, 150 nanometers, etc.

[0131] In addition, before step 106 , an electron transport layer 15 may be formed on the photoresist layer 30 by spin coating, slit coating, electrostatic spraying, etc. Then, a first electrode 40 is formed on the electron transport layer 15 by evaporation or sputtering.

[0132] The material of the electron transport layer 15 is metal oxide. The metal oxide can be ZnO, Zn x Mg y O, Zn x Al y O, Zn x Mg y Li z The thickness of the electron transport layer 15 is 20 nm to 100 nm. Specifically, the thickness of the electron transport layer 15 can be 20 nm, 25 nm, 40 nm, 60 nm, 80 nm, 90 nm, 95 nm, 100 nm, etc.

[0133] In addition, before step 102, a pixel definition layer 11 may be formed on the substrate 10 by coating, a through hole 110 may be formed in the pixel definition layer 11 by an etching process, and a second electrode 12 may be formed in the through hole 110. Then, a hole injection layer 13 and a hole transport layer 14 may be formed in sequence on the pixel definition layer 11 and the second electrode 12.

[0134] Specifically, a hole injection material is disposed on the pixel definition layer 11 and the second electrode 12, and after reduced pressure drying and heat treatment, a hole injection layer 13 is prepared. The thickness of the hole injection layer 13 is 10 to 60 nanometers. Specifically, the thickness of the hole injection layer 13 can be 10 nanometers, 15 nanometers, 20 nanometers, 30 nanometers, 40 nanometers, 50 nanometers, 60 nanometers, etc. The hole injection material can be a conductive polymer material such as polythiophene or polyaniline, or a derivative thereof.

[0135] Specifically, a hole transport material is formed on the hole injection layer 13, and after reduced pressure drying and heat treatment, the hole transport layer 14 is prepared. The thickness of the hole transport layer 14 is 10 to 50 nanometers. Specifically, the thickness of the hole transport layer 14 can be 10 nanometers, 15 nanometers, 20 nanometers, 30 nanometers, 40 nanometers, 45 nanometers, 50 nanometers, etc. The hole transport material can be any of TFB, Poly-TPD, or PVK.

[0136] In the manufacturing method of the display panel provided in the present application, part of the material of the surface of the photoresist layer 30 away from the light-emitting layer 20 is removed through thinning and other processes, and part of the photoresist layer 30 is retained. Without affecting the light transmittance, the partial peeling of the light-emitting layer 20 caused by peeling off the photoresist layer 30 is avoided, thereby improving the light-emitting characteristics of the display panel 100.

[0137] This application also provides a method for manufacturing a display panel. Figure 9 and Figures 10A-10G . Figure 9 It is a flow chart of the second method for manufacturing a display panel provided in this application. Figures 10A-10G yes Figure 9 The manufacturing method of the display panel 100 specifically includes the following steps:

[0138] 201. Provide a substrate 10.

[0139] Specifically, in the display panel 100, the substrate 10 may be an array substrate. The manufacturing process of the array substrate is well known to those skilled in the art and will not be described in detail here.

[0140] 202. A first light-emitting material and a first photoresist material are sequentially stacked on the substrate 10.

[0141] Specifically, before step 102, a pixel definition layer 11, a second electrode 12, a hole injection layer 13, and a hole transport layer 14 may be sequentially formed on the substrate 10. The fabrication process of the pixel definition layer 11, the second electrode 12, the hole injection layer 13, and the hole transport layer 14 can be found in the above-mentioned embodiments and will not be further described here.

[0142] Specifically, first, a first luminescent material is formed on the hole transport layer 14 by spin coating, slit coating, electrostatic spraying, etc. Then, a first photoresist material is formed on the first luminescent material by spin coating, slit coating, electrostatic spraying, etc. Figure 10A Wherein, the thickness of the first photoresist material is 0.3 micrometers to 1.5 micrometers.

[0143] 203 . Pattern the first photoresist material and the first light-emitting material respectively to form a first photoresist portion 31 and a first light-emitting portion 21 . The first photoresist portion 31 at least covers the first light-emitting portion 21 .

[0144] Specifically, a mask plate may be used to perform exposure processing on the portion of the first photoresist material not covered by the mask plate, such as Figure 10B Then, the first photoresist material is immersed or sprayed with a first solution to remove the portion of the first photoresist material after the exposure process. Finally, the remaining first photoresist material is cured to form a first photoresist portion 31.

[0145] Then, the first luminescent material not covered by the first photoresist portion 31 is immersed or sprayed with the second solution to remove the first luminescent material not covered by the first photoresist portion 31, thereby forming the first luminescent portion 21. Figure 10C shown.

[0146] It should be noted that since the first light-emitting portion 21 is covered by the first photoresist portion 31, the second solution does not easily remove the first light-emitting portion 21. However, since the end surface of the first light-emitting portion 21 is not covered by the first photoresist portion 31, in some embodiments, the treatment time of the second solution can be controlled to allow the first photoresist portion 31 to protrude from the end surface of the first light-emitting portion 21.

[0147] 204 . A second light-emitting material and a second photoresist material are sequentially stacked on the substrate 10 .

[0148] Specifically, first, a second luminescent material is formed on the substrate 10 by spin coating, slit coating, electrostatic spraying, etc. Then, a second photoresist material is formed on the second luminescent material by spin coating, slit coating, electrostatic spraying, etc.

[0149] 205 . Pattern the second photoresist material and the second light-emitting material respectively to form a second photoresist portion 32 and a second light-emitting portion 22 . The second photoresist portion 32 at least covers the second light-emitting portion 22 .

[0150] Specifically, a mask plate can be used to expose the portion of the second photoresist material not covered by the mask plate. The second photoresist material can then be immersed or sprayed with a third solution to remove the exposed portion of the second photoresist material. Finally, the remaining second photoresist material is cured to form the second photoresist portion 32.

[0151] Then, the second luminescent material not covered by the second photoresist portion 32 is immersed or sprayed with the fourth solution to remove the second luminescent material not covered by the second photoresist portion 32, thereby forming the second luminescent portion 22. Figure 10D shown.

[0152] It should be noted that in step 204, during the process of providing the second luminescent material and the second photoresist material, the second luminescent material and the second photoresist material may cover the first photoresist portion 31. However, after step 205, the second luminescent material and the second photoresist material covering the first photoresist portion 31 can also be removed, thereby preventing the color mixing problem.

[0153] In addition, a certain distance may be set between the second light emitting portion 22 and the first light emitting portion 21 to avoid color mixing between the first light emitting portion 21 and the second light emitting portion 22 .

[0154] 206 . A third light-emitting material and a third photoresist material are sequentially stacked on the substrate 10 .

[0155] Specifically, first, a third luminescent material is formed on the substrate 10 by spin coating, slit coating, electrostatic spraying, etc. Then, a third photoresist material is formed on the third luminescent material by spin coating, slit coating, electrostatic spraying, etc.

[0156] 207 . Pattern the third photoresist material and the third light-emitting material respectively to form a third photoresist portion 33 and a third light-emitting portion 23 . The third photoresist portion 33 at least covers the third light-emitting portion 23 .

[0157] Specifically, the portion of the third photoresist material not covered by the mask is exposed. The third photoresist material is then immersed or sprayed with a fifth solution to remove the exposed portion of the third photoresist material. Finally, the remaining third photoresist material is cured to form a third photoresist portion 33.

[0158] Then, the third luminescent material not covered by the third photoresist portion 33 is immersed or sprayed with the sixth solution to remove the second luminescent material not covered by the third photoresist portion 33, thereby forming the third luminescent portion 23. Figure 10E shown.

[0159] It should be noted that in step 206, when the third luminescent material and the third photoresist material are provided, the second luminescent material and the second photoresist material may cover the first photoresist portion 31 and the second photoresist portion 32. However, after step 207, the third luminescent material and the third photoresist material covering the first photoresist portion 31 and the second photoresist portion 32 can also be removed, thereby preventing the color mixing problem.

[0160] In addition, a certain distance may be set between the third light emitting portion 23 and the second light emitting portion 22 to avoid color mixing between the second light emitting portion 22 and the third light emitting portion 23 .

[0161] 208 . Remove portions of the first photoresist portion 31 , the second photoresist portion 32 , and the third photoresist portion 33 away from the surface of the light emitting layer 20 .

[0162] Specifically, a plasma etching process or a laser etching process is used to thin the first photoresist portion 31, the second photoresist portion 32, and the third photoresist portion 33 to remove a portion of the material of the first photoresist portion 31, the second photoresist portion 32, and the third photoresist portion 33 away from the surface of the light-emitting layer 20. After the removal of the portion of material, the thickness of the first photoresist portion 31 is 1 nanometer to 15 nanometers. After the removal of the portion of material, the thickness of the second photoresist portion 32 is 1 nanometer to 15 nanometers. After the removal of the portion of material, the thickness of the third photoresist portion 33 is 1 nanometer to 15 nanometers. Figure 10F shown.

[0163] It should be noted that, in this embodiment, the first photoresist portion 31 , the second photoresist portion 32 and the third photoresist portion 33 that are away from the surface of the light emitting layer 20 can be removed simultaneously by the same process, thereby simplifying the manufacturing process.

[0164] Of course, in other embodiments of the present application, portions of the first photoresist portion 31, the second photoresist portion 32, and the third photoresist portion 33 away from the surface of the light-emitting layer 20 may be removed separately. This method can prepare first photoresist portions 31, second photoresist portions 32, and third photoresist portions 33 of different thicknesses to meet different display requirements.

[0165] 209 . Form a first electrode layer 40 on a side of the first photoresist portion 31 , the second photoresist portion 32 , and the third photoresist portion 33 away from the substrate 10 .

[0166] Specifically, the first electrode 40 is formed on the side of the first photoresist portion 31, the second photoresist portion 32 and the third photoresist portion 33 away from the substrate 10 by evaporation or sputtering process. Figure 10G shown.

[0167] Wherein, the first electrode 40 is made of a high-conductivity material. The high-conductivity material can be any one of Ag, Al, or Mg / Ag. If the display panel 100 provided in the present application is a top-emitting display panel, the thickness of the first electrode 40 is 5 nanometers to 40 nanometers. Specifically, the thickness of the first electrode 40 can be 5 nanometers, 10 nanometers, 20 nanometers, 30 nanometers, 40 nanometers, etc. If the display panel 100 provided in the present application is a bottom-emitting display panel, the thickness of the first electrode 40 is 80 nanometers to 150 nanometers. Specifically, the thickness of the first electrode 40 can be 80 nanometers, 90 nanometers, 120 nanometers, 140 nanometers, 150 nanometers, etc.

[0168] In addition, before step 209, an electron transport layer 15 may be formed on the first photoresist portion 31, the second photoresist portion 32, and the third photoresist portion 33 by spin coating, slit coating, electrostatic spraying, etc. Then, a first electrode 40 is formed on the electron transport layer 15 by evaporation or sputtering.

[0169] In addition, this embodiment is described by taking the example that the first photoresist material, the second photoresist material and the third photoresist material are all positive photoresist materials, but this should not be understood as a limitation to the present application.

[0170] It should be noted that the first photoresist material, the second photoresist material, and the third photoresist material can be the same material or different materials. When the first photoresist material, the second photoresist material, and the third photoresist material are the same, the first solution, the third solution, and the fifth solution can be the same solution. In addition, the second solution, the fourth solution, and the sixth solution can be the same solution or different solutions, which can be specifically set according to the quantum materials in the first light-emitting material, the second light-emitting material, and the third light-emitting material.

[0171] In the method for manufacturing the display panel 100 provided herein, a step-by-step photolithography method is used to pattern the light-emitting layer 20. Simultaneously, by removing a portion of the material of the photoresist layer 30 away from the surface of the light-emitting layer 20, a portion of the photoresist layer 30 is retained, eliminating the step of stripping the photoresist layer 30. This prevents partial stripping of the light-emitting layer 20 caused by stripping the photoresist layer 30, thereby improving the luminescence characteristics of the display panel 100. Furthermore, because the photoresist layer 30 has a certain resistivity, it can adjust the electron transmission rate and maintain the electron-hole transmission balance, thereby improving the luminescence efficiency of the display panel 100.

[0172] The above is a detailed introduction to the display panel and its manufacturing method provided by the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for general technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: include: substrate; a light-emitting layer, disposed on the substrate; a photoresist layer, disposed on a side of the light-emitting layer away from the substrate, and A first electrode is provided on a side of the photoresist layer away from the substrate; Wherein, the first electrode is a cathode, and the thickness of the photoresist layer is 1 nanometer to 15 nanometers.

2. The display panel according to claim 1, wherein: The photoresist layer is obtained by removing part of the material of a preset photoresist layer pre-set on the light-emitting layer.

3. The display panel according to claim 2, wherein: The thickness of the preset photoresist layer is 0.3 microns to 1.5 microns.

4. The display panel according to claim 1, wherein: The light-emitting layer includes a first light-emitting portion and a second light-emitting portion arranged in the same layer, and the photoresist layer includes a first photoresist portion and a second photoresist portion arranged in the same layer; The first photoresist portion is provided corresponding to the first light-emitting portion and covers at least the first light-emitting portion. The second photoresist portion is provided corresponding to the second light-emitting portion and covers at least the second light-emitting portion.

5. The display panel according to claim 4, wherein: There is a gap between the first light-emitting portion and the second light-emitting portion, and the second photoresist portion fills the gap.

6. The display panel according to claim 4, wherein: The first photoresist portion protrudes from the first light-emitting portion and is arranged close to an end surface of the second light-emitting portion.

7. The display panel according to claim 4, wherein: The first photoresist portion and the second photoresist portion are made of different materials; The first photoresist portion has a high light transmittance corresponding to the light-emitting color of the first light-emitting portion, and the second photoresist portion has a high light transmittance corresponding to the light-emitting color of the second light-emitting portion.

8. The display panel according to claim 4, wherein: The first photoresist portion and the second photoresist portion have different thicknesses; In which, the thickness of the first photoresist portion and the second photoresist portion is adjusted according to at least one of the thickness of the first light-emitting portion and the second light-emitting portion, the luminous brightness of the first light-emitting portion and the second light-emitting portion, the luminous lifetime of the first light-emitting portion and the second light-emitting portion, and the electron blocking efficiency of the first photoresist portion and the second photoresist portion.

9. The display panel according to claim 8, wherein: The light-emitting layer further includes a third light-emitting portion, and the photoresist layer further includes a third photoresist portion, the third photoresist portion is arranged corresponding to the third light-emitting portion, and the third photoresist portion at least covers the third light-emitting portion; Among them, the first light-emitting portion is a red light-emitting portion, the second light-emitting portion is a green light-emitting portion, and the third light-emitting portion is a blue light-emitting portion. The thickness of the first photoresist portion is greater than the thickness of the third photoresist portion, and the thickness of the second photoresist portion is greater than the thickness of the first photoresist portion.

10. The display panel according to claim 1, wherein The display panel further includes a hole injection layer, a hole transport layer and an electron transport layer; The hole injection layer is located on a side of the light-emitting layer close to the substrate, the hole transport layer is located between the hole injection layer and the light-emitting layer, and the electron transport layer is located between the photoresist layer and the first electrode.

11. A method for manufacturing a display panel, characterized in that: include: providing a substrate; sequentially stacking a luminescent material and a photoresist material on the substrate; performing an exposure process on a portion of the photoresist material, and performing a development process on the photoresist material using a first solution to form a photoresist layer; removing the light-emitting material not covered by the photoresist layer using a second solution to form a light-emitting layer; removing a portion of material from a surface of the photoresist layer away from the light-emitting layer; forming a first electrode layer on a side of the photoresist layer away from the substrate; The first electrode is a cathode, and the thickness of the photoresist layer after part of the material is removed is 1 nanometer to 15 nanometers.

12. A method for manufacturing a display panel, characterized in that: include: providing a substrate; sequentially stacking a first light-emitting material and a first photoresist material on the substrate; performing patterning on the first photoresist material and the first light-emitting material respectively to form a first photoresist portion and a first light-emitting portion, wherein the first photoresist portion at least covers the first light-emitting portion; sequentially stacking a second luminescent material and a second photoresist material on the substrate; performing patterning on the second photoresist material and the second light-emitting material respectively to form a second photoresist portion and a second light-emitting portion, wherein the second photoresist portion at least covers the second light-emitting portion; sequentially stacking a third light-emitting material and a third photoresist material on the substrate; performing patterning on the third photoresist material and the third light-emitting material to form a third photoresist portion and a third light-emitting portion, respectively, wherein the third photoresist portion at least covers the third light-emitting portion; removing a portion of material from the first photoresist portion, the second photoresist portion, and the third photoresist portion that is away from the light-emitting layer; forming a first electrode layer on a side of the first photoresist portion, the second photoresist portion, and the third photoresist portion away from the substrate; Wherein, the first electrode is a cathode; The thickness of the first photoresist portion after partial material removal is 1 nm to 15 nm, the thickness of the second photoresist portion after partial material removal is 1 nm to 15 nm, and the thickness of the third photoresist portion after partial material removal is 1 nm to 15 nm.

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