Substrate processing device and substrate processing method

Abstract

The substrate processing device involved in the embodiment includes a substrate processing tank, a first circulation line and a second circulation line. In the substrate processing tank, the substrate is processed by immersing the substrate in a processing liquid. The first circulation line is connected to the substrate processing tank so that the processing liquid discharged from the substrate processing tank flows into the substrate processing tank. The second circulation line is connected to the first circulation line and is used to merge the processing liquid discharged from the substrate processing tank into the first circulation line. The first circulation line includes a first liquid delivery part for pressurizing and conveying the processing liquid, a heating part for heating the processing liquid, and a filter for removing foreign matter in the processing liquid. The second circulation line includes a second liquid delivery part for pressurizing and conveying the processing liquid.

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Conventionally, Patent Document 1 discloses a substrate processing apparatus that circulates a processing liquid in a substrate processing tank to process a substrate immersed in the substrate processing tank.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-133558 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology capable of improving the temperature uniformity of a substrate processing bath.

[0008] Solutions for solving problems

[0009] A substrate processing device according to one embodiment of the present invention includes a substrate processing tank, a first circulation line, and a second circulation line. In the substrate processing tank, the substrate is processed by immersing the substrate in a processing liquid. The first circulation line is connected to the substrate processing tank, and is used to allow the processing liquid discharged from the substrate processing tank to flow into the substrate processing tank. The second circulation line is connected to the first circulation line, and is used to allow the processing liquid discharged from the substrate processing tank to merge into the first circulation line. The first circulation line includes: a first liquid supply unit, which pressurizes and transports the processing liquid; a heating unit, which heats the processing liquid; and a filter, which removes foreign matter in the processing liquid. The second circulation line includes a second liquid supply unit, which pressurizes and transports the processing liquid.

[0010] Effects of the Invention

[0011] According to one aspect of the embodiment, the temperature uniformity of a substrate processing bath can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic plan view of a substrate processing apparatus according to an embodiment.

[0013] Figure 2 This is a schematic block diagram showing the structure of a processing tank for etching according to an embodiment.

[0014] Figure 3 This is a block diagram for explaining a part of the control device according to the embodiment.

[0015] Figure 4It is a diagram showing the temperature change of the etching liquid in the flow rate adjustment process according to the embodiment.

[0016] Figure 5 This is a flowchart illustrating the flow rate adjustment process involved in the embodiment.

[0017] Figure 6 This is a schematic block diagram showing the structure of an etching processing tank according to a modification of the embodiment.

[0018] Figure 7 This is a schematic block diagram showing the structure of an etching processing tank according to a modification of the embodiment. DETAILED DESCRIPTION

[0019] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, the disclosed substrate processing apparatus and substrate processing method are not limited to the embodiments shown below.

[0020] like Figure 1 As shown, the substrate processing apparatus 1 according to the embodiment includes a carrier loading and unloading unit 2 , a substrate group forming unit 3 , a substrate group placing unit 4 , a substrate group conveying unit 5 , a substrate group processing unit 6 , and a control device 100 . Figure 1 1 is a schematic plan view of the substrate processing apparatus 1 according to the embodiment. Here, the description will be made with the direction perpendicular to the horizontal direction being referred to as the up-down direction.

[0021] The carrier loading / unloading unit 2 loads and unloads a carrier 9 that stores a plurality of (eg, 25) substrates (silicon wafers) 8 arranged vertically in a horizontal posture.

[0022] The carrier loading and unloading section 2 is provided with a carrier table 10 for loading a plurality of carriers 9 , a carrier transport mechanism 11 for transporting the carriers 9 , carrier storage sections 12 and 13 for temporarily storing the carriers 9 , and a carrier loading table 14 for loading the carriers 9 .

[0023] The carrier loading / unloading section 2 uses the carrier transport mechanism 11 to transport the carrier 9 loaded from the outside onto the carrier table 10 to the carrier storage section 12 and the carrier placement table 14. That is, the carrier loading / unloading section 2 transports the carrier 9 containing the plurality of substrates 8 before being processed by the substrate group processing section 6 to the carrier storage section 12 and the carrier placement table 14.

[0024] The carrier storage unit 12 temporarily stores the carriers 9 storing the plurality of substrates 8 before being processed by the substrate group processing unit 6 .

[0025] The plurality of substrates 8 are carried out by a substrate carrying mechanism 15 described later from the carrier 9 that has been carried to the carrier mounting table 14 and houses the plurality of substrates 8 before being processed by the substrate group processing unit 6 .

[0026] In addition, a plurality of substrates 8 processed by the substrate group processing section 6 are carried from the substrate transport mechanism 15 to the carrier 9 mounted on the carrier mounting table 14 and accommodating no substrates 8 .

[0027] The carrier loading / unloading section 2 uses a carrier transport mechanism 11 to transport a carrier 9 placed on a carrier mounting table 14 and containing a plurality of substrates 8 processed by the substrate group processing section 6 to a carrier storage section 13 and a carrier table 10 .

[0028] The carrier 9 conveyed to the carrier stage 10 is carried out to the outside.

[0029] The substrate group forming section 3 is provided with a substrate conveying mechanism 15 for conveying a plurality of (e.g., 25) substrates 8. The substrate group forming section 3 conveys a plurality of (e.g., 25) substrates 8 twice by the substrate conveying mechanism 15 to form a substrate group consisting of a plurality of (e.g., 50) substrates 8.

[0030] The substrate group transporting section 5 transports the substrate group between the substrate group placing section 4 and the substrate group processing section 6 and within the substrate group processing section 6 .

[0031] The substrate group transporting unit 5 is provided with a substrate group transporting mechanism 19 for transporting the substrate group. The substrate group transporting mechanism 19 includes a guide rail 20 arranged along the substrate group placing unit 4 and the substrate group processing unit 6, and a moving body 21 that moves along the guide rail 20 while holding the substrate group with a substrate holding body 22.

[0032] The substrate group processing section 6 performs processing such as etching, cleaning, and drying on a substrate group formed of a plurality of substrates 8 arranged in a vertical posture in a front-to-back manner.

[0033] Two etching processing devices 23, a cleaning processing device 24, a substrate holder cleaning processing device 25, and a drying processing device 26 are arranged in a row in the substrate group processing section 6. The etching processing device 23 performs etching processing on the substrate group. The cleaning processing device 24 performs cleaning processing on the substrate group. The substrate holder cleaning processing device 25 performs cleaning processing on the substrate holder 22. The drying processing device 26 performs drying processing on the substrate group. In addition, the number of etching processing devices 23 is not limited to two, and can be one or more than three.

[0034] The etching processing apparatus 23 includes a processing tank 27 for etching, a processing tank 28 for rinsing, and substrate lifting mechanisms 29 and 30 .

[0035] The etching treatment tank 27 stores an etching treatment liquid (hereinafter referred to as "etching liquid") for etching treatment. The rinsing treatment tank 28 stores a rinsing treatment liquid (pure water, etc.) for rinsing treatment. The details of the etching treatment tank 27 will be described later.

[0036] The plurality of substrates 8 constituting the substrate group are held in a vertical posture in a front-to-back arrangement by the substrate lifting mechanisms 29 and 30 .

[0037] The cleaning processing device 24 includes a cleaning processing tank 31 , a rinsing processing tank 32 , and substrate lifting mechanisms 33 and 34 .

[0038] The cleaning tank 31 stores a cleaning solution (SC-1, etc.). The rinse tank 32 stores a rinse solution (pure water, etc.). The plurality of substrates 8 of one substrate group are held in a vertical orientation by substrate lifting mechanisms 33 and 34.

[0039] The drying processing device 26 includes a processing tank 35 and a substrate lifting mechanism 36 that is lifted and lowered relative to the processing tank 35 .

[0040] A drying process gas (IPA (isopropyl alcohol) or the like) is supplied to the process tank 35. A plurality of substrates 8 of one substrate group are held in a vertical orientation in a substrate lifting mechanism 36 while being arranged in a front-to-back manner.

[0041] The drying processing device 26 receives the substrate group from the substrate holding body 22 of the substrate group conveying mechanism 19 by means of the substrate lifting mechanism 36, lowers the received substrate group by means of the substrate lifting mechanism 36 and conveys it into the processing tank 35, and performs drying processing on the substrate group by means of the drying processing gas supplied to the processing tank 35. Furthermore, the drying processing device 26 raises the substrate group by means of the substrate lifting mechanism 36, and delivers the substrate group after the drying processing from the substrate lifting mechanism 36 to the substrate holding body 22 of the substrate group conveying mechanism 19.

[0042] The substrate holder cleaning processing device 25 has a processing tank 37, and a cleaning processing liquid and a dry gas are supplied to the processing tank 37. The substrate holder cleaning processing device 25 cleans the substrate holder 22 of the substrate group transport mechanism 19 by supplying a cleaning processing liquid and then supplying a dry gas.

[0043] Next, refer to Figure 2 The etching treatment tank 27 will be described. Figure 2 2 is a schematic block diagram showing the structure of the etching treatment tank 27 according to the embodiment. Figure 2 In the treatment tank 27 shown in FIG. 3 PO 4) aqueous solution as a chemical in the etching solution (treatment solution) used in the etching process. In addition, the etching process shown here is an example, and the etching solution is not limited to the phosphoric acid aqueous solution.

[0044] The etching treatment tank 27 includes an inner tank 43 and an outer tank 44. A phosphoric acid aqueous solution and pure water (DIW) are supplied to the treatment tank 27 from respective supply sources (not shown) to adjust the phosphoric acid concentration of the etching solution.

[0045] The upper part of the inner tank 43 is open, and the etching liquid is supplied to the vicinity of the upper part. In the inner tank 43, the substrate group (a plurality of substrates 8) is immersed in the etching liquid by the substrate lifting mechanism 29 to perform etching treatment on the substrate 8. That is, the substrate 8 is processed by immersing the substrate 8 in the treatment tank 27 (an example of a substrate treatment tank).

[0046] The inner tank 43 is provided with a temperature sensor 48 for detecting the temperature of the etching liquid in the inner tank 43. The temperature sensor 48 (an example of a second temperature sensor) is provided at the upper portion of the inner tank 43 (an example of a substrate processing tank) to detect the temperature of the etching liquid (an example of a processing liquid) in the inner tank 43. Specifically, the temperature sensor 48 detects the temperature of the etching liquid in the upper portion of the inner tank 43. Hereinafter, the temperature of the etching liquid detected by the temperature sensor 48 may be referred to as the "tank temperature".

[0047] The outer tank 44 is provided around the upper portion of the inner tank 43 , and the upper portion of the outer tank 44 is open. The etching liquid overflowing from the inner tank 43 flows into the outer tank 44 .

[0048] The outer tank 44 and the inner tank 43 are connected via a first circulation line 50. One end of the first circulation line 50 is connected to the outer tank 44, and the other end of the first circulation line 50 is connected to a processing liquid supply nozzle 46 provided in the inner tank 43.

[0049] The processing liquid supply nozzle 46 is provided at the lower part of the inner tank 43, and discharges the etching liquid from the lower side of the inner tank 43. A plurality of processing liquid supply nozzles 46 are provided.

[0050] The first circulation line 50 includes a plurality of branch lines 50a for allowing etching liquid (an example of a processing liquid) to flow into the processing tank 27 (an example of a substrate processing tank). The branch lines 50a are provided according to the number of the processing liquid supply nozzles 46. The branch lines 50a are connected to the processing liquid supply nozzles 46. Figure 2 Although three processing liquid supply nozzles 46 and three branch lines 50a are described in FIG. 1 , the present invention is not limited to this.

[0051] The first circulation line 50 is connected to the processing tank 27 (an example of a substrate processing tank) so that the etching liquid (an example of a processing liquid) discharged from the processing tank 27 flows into the processing tank 27. In the first circulation line 50, a pump 51, a heater 52, a filter 53, a connection part 54, a mixer 55, and a temperature sensor 56 are provided in order from the outer tank 44 side. That is, in the first circulation line 50, the pump 51, the heater 52, the filter 53, the connection part 54, the mixer 55, and the temperature sensor 56 are provided from the upstream side to the downstream side in the flow direction of the etching liquid in the first circulation line 50.

[0052] The pump 51 (an example of the first liquid delivery unit) pressurizes and delivers the etching liquid (an example of the processing liquid) in the first circulation line 50. By driving the pump 51, the etching liquid is delivered from the outer tank 44 to the inner tank 43 via the first circulation line 50. In addition, the etching liquid overflows from the inner tank 43 and flows out to the outer tank 44 again. In this way, the etching liquid circulates. In addition, the etching liquid is pressurized and delivered by the pump 51 during the etching process of the substrate 8.

[0053] The heater 52 (an example of a heater) heats the etching liquid (an example of a processing liquid). Specifically, the heater 52 heats the etching liquid supplied to the inner tank 43 to a temperature suitable for etching processing. The heater 52 is based on the temperature from the control device 100 (see Figure 1 ) signal to control the output, that is, to control the heating amount of the etching solution. The heater 52 is, for example, a jacket heater.

[0054] The filter 53 is used to remove foreign matter in the etching liquid (an example of the processing liquid). The second circulation line 60 is connected to the connection part 54. The mixer 55 (an example of the stirring part) is provided at a position downstream of the connection part 54 in the first circulation line 50 to stir the etching liquid (an example of the processing liquid). The mixer 55 stirs the etching liquid flowing in the first circulation line 50. Specifically, the mixer 55 stirs the etching liquid flowing in the first circulation line 50 and the etching liquid flowing in from the second circulation line 60 to make the temperature of the etching liquid uniform.

[0055] The temperature sensor 56 (an example of the first temperature sensor) is provided at a position on the downstream side of the connection portion 54 in the first circulation line 50, and is used to detect the temperature of the etching liquid (an example of the processing liquid) flowing in the first circulation line 50. The temperature sensor 56 measures the temperature of the etching liquid after being mixed with the etching liquid flowing in from the second circulation line 60. The temperature sensor 56 is provided near the inner tank 43. That is, the temperature sensor 56 measures the temperature of the etching liquid flowing into the inner tank 43. In the following, the temperature of the etching liquid detected by the temperature sensor 56 is sometimes referred to as the "inflow temperature". The temperature sensor 56 can detect the temperature of the etching liquid sprayed from the heater 52, that is, the temperature of the etching liquid at the outlet of the heater 52.

[0056] Furthermore, a discharge line (not shown) is connected to the first circulation line 50. When all or part of the etching liquid used in the etching process is replaced, the etching liquid is discharged using the discharge line.

[0057] The second circulation line 60 is connected to the first circulation line 50 so that the etching liquid discharged from the processing tank 27 (an example of a substrate processing tank) merges into the first circulation line 50. One end of the second circulation line 60 is connected to the outer tank 44, and the other end of the second circulation line 60 is connected to the connection part 54 of the first circulation line 50. That is, the second circulation line 60 bypasses the pump 51, the heater 52, and the filter 53 provided in the first circulation line 50 and is connected to the first circulation line 50. In other words, the second circulation line 60 is connected to the connection part 54 of the first circulation line 50, which is on the downstream side of the pump 51 (an example of a first liquid delivery part) and the heater 52 (an example of a heating part) in the flow direction of the etching liquid (an example of a processing liquid).

[0058] The second circulation line 60 includes a pump 61 for pressurizing and conveying the etching liquid (an example of the processing liquid). The heater 52 and the like provided in the first circulation line 50 are not provided in the second circulation line 60. Therefore, compared with the first circulation line 50, the pressure loss of the second circulation line 60 when pressurizing and conveying the etching liquid is small.

[0059] Next, the control device 100 involved in the embodiment is described. The control device 100 controls the operation of each part (the carrier loading and unloading part 2, the substrate group forming part 3, the substrate group placing part 4, the substrate group conveying part 5, and the substrate group processing part 6) of the substrate processing device 1. The control device 100 controls the operation of each part of the substrate processing device 1 based on a signal from a switch or the like.

[0060] Here, refer to Figure 3 A part of the function of executing the etching process in the control device 100 of the embodiment will be described. Figure 3 It is a block diagram for explaining a part of the control device 100 according to the embodiment.

[0061] The control device 100 includes a control unit 110 and a storage unit 120. The control unit 110 includes an acquisition unit 111, a calculation unit 112, a determination unit 113, and an instruction unit 114.

[0062] The control unit 110 includes, for example, a computer including a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), a HDD (Hard Disk Drive), an input / output port, and various circuits.

[0063] The CPU of the computer reads the program stored in the ROM to the RAM and executes the program, thereby functioning as the acquisition unit 111, the calculation unit 112, the determination unit 113, and the instruction unit 114 of the control unit 110. At this time, the RAM is used as a work area of ​​the CPU. In addition, the RAM can temporarily store data obtained by etching processing, etc.

[0064] Furthermore, at least a part or all of the control unit 110 may be configured by hardware such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

[0065] The storage unit 120 is a computer-readable storage medium and stores therein a program for controlling various processes executed in the substrate processing apparatus 1 .

[0066] The control device 100 controls the operation of the substrate processing apparatus 1 by reading and executing the program stored in the storage unit 120. Alternatively, the program may be stored in the computer-readable storage unit 120 and installed in the storage unit 120 of the control device 100 from another storage medium.

[0067] The computer-readable storage unit 120 includes, for example, a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

[0068] The acquisition unit 111 acquires signals from the temperature sensors 48 and 56. The calculation unit 112 calculates the first temperature difference and the second temperature difference.

[0069] The first temperature difference is the difference between the temperature detected by the temperature sensor 56 and the temperature detected by the temperature sensor 48. That is, the first temperature difference is the difference between the inflow temperature and the temperature in the tank.

[0070] The second temperature difference is the difference between the inflow temperature and the desired temperature of the etching solution flowing into the inner tank 43. The desired temperature is a preset temperature, which is a set temperature of the temperature in the tank.

[0071] The determination unit 113 determines whether the first temperature difference is greater than a preset first threshold. The determination unit 113 determines whether the second temperature difference is greater than a preset second threshold. The second temperature difference is less than the first threshold. The first threshold is, for example, 3°C. The second threshold is, for example, 2°C.

[0072] The determination unit 113 determines whether the processing of the substrate 8 is completed. For example, the determination unit 113 determines whether a preset processing time has passed after the substrate 8 is immersed in the inner tank 43. If the processing time has passed after the substrate 8 is immersed in the inner tank 43, the determination unit 113 determines that the processing of the substrate 8 is completed.

[0073] The instruction unit 114 generates an instruction signal for setting the flow rate of the pump 51 provided in the first circulation line 50 to a preset fixed flow rate.

[0074] When the first temperature difference is greater than the first threshold value, the indicator 114 generates an instruction signal for adjusting the flow rate of the pump 61 provided in the second circulation line 60 through the first flow rate control. Specifically, the indicator 114 generates an instruction signal for adjusting the flow rate of the pump 61 based on the first temperature difference so that the first temperature difference becomes less than the first threshold value. For example, the indicator 114 generates an instruction signal for operating the pump 61 to increase the flow rate of the etching solution pressurized and delivered from the second circulation line 60.

[0075] When the first temperature difference is less than the first threshold value and the second temperature difference is greater than the second threshold value, the indicator 114 generates an instruction signal for adjusting the flow rate of the pump 61 provided in the second circulation line 60 through the second flow rate control. Specifically, the indicator 114 generates an instruction signal for adjusting the flow rate of the pump 61 based on the second temperature difference so that the second temperature difference becomes less than the second threshold value. For example, the indicator 114 generates an instruction signal for operating the pump 61 to pressurize and deliver a flow rate less than the flow rate in the first flow rate control from the second circulation line 60 to the first circulation line 50.

[0076] When the second temperature difference is less than or equal to the second threshold value, the indicator 114 generates an indicator signal for adjusting the flow rate of the pump 61 provided in the second circulation line 60 by performing stable control. Specifically, the indicator 114 generates an indicator signal for controlling the flow rate of the pump 61 provided in the second circulation line 60 based on the inflow temperature so that the inflow temperature detected by the temperature sensor 56 becomes a desired temperature. For example, the indicator 114 generates an indicator signal for stopping the operation of the pump 61 to stop the pressurized delivery of the second circulation line 60.

[0077] The instruction unit 114 outputs the generated instruction signal to the pumps 51 and 61. Thus, the pump 51 provided in the first circulation line 50 pressurizes and delivers the etching liquid at a fixed flow rate. In addition, the pump 61 provided in the second circulation line 60 pressurizes and delivers the etching liquid at a flow rate set by each control.

[0078] In this way, the control device 100 controls the pump 51 (an example of the first liquid delivery unit) and the pump 61 (an example of the second liquid delivery unit). The control device 100 controls the flow rate of the etching liquid (an example of the processing liquid) pressurized and delivered by the pump 61 (an example of the second liquid delivery unit) based on the inflow temperature (an example of the temperature detected by the temperature sensor 56).

[0079] During the etching process, the flow rate of the etching liquid in the second circulation line 60 is adjusted to adjust the flow rate of the etching liquid flowing from the processing liquid supply nozzle 46 into the inner tank 43. The etching liquid flowing in the first circulation line 50 and the etching liquid flowing in the second circulation line 60 merge through the connection portion 54. Therefore, by adjusting the flow rate of the etching liquid in the second circulation line 60, the temperature of the etching liquid downstream of the connection portion 54 can be adjusted.

[0080] Here, refer to Figure 4 A description will be given of a change in the temperature of the etching liquid when the flow rate adjustment process according to the embodiment is performed. Figure 4 FIG. 2 is a diagram showing the temperature change of the etching liquid during the flow rate adjustment process according to the embodiment. Figure 4 In the figure, the solid line represents the temperature in the tank. Figure 4 In FIG, the inflow temperature is indicated by a single-dotted line.

[0081] At time t0, the substrate 8 is immersed in the inner tank 43. The temperature of the substrate 8 is lower than the temperature of the etching solution in the inner tank 43, so the temperature in the tank decreases by immersing the substrate 8 in the tank. In addition, the temperature of the etching solution flowing in the first circulation line 50 also decreases. The first circulation line 50 is provided with a heater 52 to heat the etching solution, so the temperature drop of the inflow temperature is less than the temperature drop of the in-tank temperature. Therefore, the difference between the inflow temperature and the in-tank temperature, that is, the first temperature difference, is greater than the first threshold value.

[0082] Therefore, the pump 61 provided in the second circulation line 60 is controlled by the first flow control. The flow rate of the pump 61 provided in the second circulation line 60 is adjusted by the first flow control based on the first temperature difference, and the etching liquid flowing in the second circulation line 60 merges with the etching liquid heated by the heater 52 provided in the first circulation line 50. The etching liquid flowing in the second circulation line 60 merges with the etching liquid flowing in the first circulation line 50, and thus, the etching liquid whose temperature difference with the etching liquid in the inner tank 43 is suppressed flows from the processing liquid supply nozzle 46 into the inner tank 43.

[0083] That is, the substrate processing apparatus 1 heats the etching liquid using the heater 52 provided in the first circulation line 50, and causes the etching liquid whose temperature difference with the etching liquid in the inner tank 43 is suppressed to flow into the inner tank 43 from the processing liquid supply nozzle 46. Therefore, it is possible to suppress the temperature difference in the etching liquid in the inner tank 43, thereby improving the temperature uniformity of the etching liquid.

[0084] In addition, the flow rate of the etching liquid flowing into the inner tank 43 is increased by the second circulation line 60 without a heater or the like. Therefore, the substrate processing apparatus 1 suppresses an increase in pressure loss and increases the flow rate of the etching liquid flowing into the inner tank 43. Therefore, the stirring property of the etching liquid in the inner tank 43 is improved, and the temperature uniformity of the etching liquid is improved.

[0085] The etching liquid heated by the heater 52 flows into the inner tank 43 , whereby the temperature of the etching liquid in the inner tank 43 increases, and the first temperature difference decreases.

[0086] At time t1, when the first temperature difference becomes less than the first threshold, the flow rate of the pump 61 provided in the second circulation line 60 is adjusted by the second flow rate control. Here, the flow rate of the pump 61 provided in the second circulation line 60 is adjusted based on the second temperature difference so that the second temperature difference becomes less than the second threshold.

[0087] Thus, the increase in pressure loss is suppressed and the flow rate of the etching solution flowing into the inner tank 43 is adjusted, so that the temperature in the tank approaches a desired temperature.

[0088] At time t2, when the second temperature difference becomes less than the second threshold, the flow rate of the pump 61 provided in the second circulation line 60 is adjusted by steady control based on the inflow temperature so as to keep the inflow temperature constant. Thus, the temperature of the etching solution in the inner tank 43 gradually converges to the desired temperature.

[0089] Next, refer to Figure 5 The flow chart of the embodiment is used to illustrate the flow adjustment processing involved in the implementation method. Figure 5 This is a flowchart illustrating the flow rate adjustment process involved in the embodiment.

[0090] The control device 100 immerses the substrate 8 in the inner tank 43 using the substrate lifting mechanism 29 ( S100 ).

[0091] The control device 100 determines whether the first temperature difference is greater than the first threshold value (S101). When the first temperature difference is greater than the first threshold value (S101: "Yes"), the control device 100 controls the pump 61 through the first flow control to adjust the flow rate of the etching liquid in the second circulation line 60 (S102). That is, when the first temperature difference between the temperature detected by the temperature sensor 56 (an example of the first temperature sensor) and the temperature detected by the temperature sensor 48 (an example of the second temperature sensor) is greater than the preset first threshold value, the control device 100 controls the flow rate of the etching liquid (an example of the processing liquid) pressurized and delivered by the pump 61 (an example of the second liquid delivery unit) so that the first temperature difference becomes less than the first threshold value.

[0092] When the first temperature difference is less than the first threshold value (S101: No), the control device 100 determines whether the second temperature difference is greater than the second threshold value (S103). When the second temperature difference is greater than the second threshold value (S103: Yes), the control device 100 controls the pump 61 through the second flow control to adjust the flow rate of the etching liquid in the second circulation line 60 (S104). That is, when the second temperature difference between the temperature detected by the temperature sensor 56 (an example of the first temperature sensor) and the desired temperature (pre-set temperature of the processing liquid) is greater than the second threshold value, the control device 100 controls the flow rate of the etching liquid (an example of the processing liquid) pressurized and delivered by the pump 61 (an example of the second liquid delivery unit) so that the second temperature difference becomes less than the second threshold value.

[0093] When the second temperature difference is less than the second threshold value (S103: No), the control device 100 controls the pump 61 by stable control to adjust the flow rate of the etching solution in the second circulation line 60 (S105). Specifically, the control device 100 adjusts the flow rate of the etching solution in the second circulation line 60 based on the inflow temperature so that the inflow temperature becomes the desired temperature.

[0094] The control device 100 determines whether the first temperature difference is greater than the first threshold value (S106). If the first temperature difference is greater than the first threshold value (S106: Yes), the control device 100 controls the pump 61 through the first flow control to adjust the flow rate of the etching solution in the second circulation line 60 (S102).

[0095] When the first temperature difference is less than the first threshold value (S106: No), the control device 100 determines whether to end the etching process (S107). When the etching process is ended (S107: Yes), the control device 100 ends the current process. When the etching process is not ended (S107: No), the control device 100 returns to step S105 and repeats the above process.

[0096] Next, effects of the substrate processing apparatus 1 according to the embodiment will be described.

[0097] The substrate processing apparatus 1 includes a processing tank 27 (an example of a substrate processing tank), a first circulation line 50, and a second circulation line 60. In the processing tank 27, the substrate 8 is treated by immersing the substrate 8 in an etching liquid (an example of a processing liquid). The first circulation line 50 is connected to the processing tank 27 so that the etching liquid discharged from the processing tank 27 flows into the processing tank 27. The second circulation line 60 is connected to the first circulation line 50 so that the etching liquid discharged from the processing tank 27 merges with the first circulation line 50. The first circulation line 50 includes a pump 51 (an example of a first liquid delivery unit) for pressurizing and conveying the etching liquid, a heater 52 (an example of a heating unit) for heating the etching liquid, and a filter 53 for removing foreign matter in the etching liquid. The second circulation line 60 includes a pump 61 (an example of a second liquid delivery unit) for pressurizing and conveying the etching liquid.

[0098] Thus, the substrate processing apparatus 1 can make the etching liquid conveyed under pressure through the second circulation line 60 merge with the etching liquid flowing in the first circulation line 50 and flow into the processing tank 27. Therefore, for example, when the temperature of the etching liquid in the processing tank 27 becomes low immediately after the substrate 8 is immersed in the processing tank 27, the substrate processing apparatus 1 can suppress the first temperature difference between the tank temperature and the inflow temperature from increasing.

[0099] The substrate processing apparatus 1 can suppress the increase of the first temperature difference without reducing the amount of heating of the etching liquid by the heater 52. Therefore, the substrate processing apparatus 1 can improve the temperature uniformity of the etching liquid in the processing tank 27. In addition, the substrate processing apparatus 1 can increase the flow rate of the etching liquid sprayed from the processing liquid supply nozzle 46, thereby improving the stirring performance of the etching liquid in the inner tank 43, and further improving the temperature uniformity of the etching liquid in the inner tank 43.

[0100] The second circulation line 60 is connected to a connection portion 54 located downstream of the pump 51 (an example of a first liquid delivery unit) and the heater 52 (an example of a heating unit) in the flow direction of the etching liquid (an example of a processing liquid) in the first circulation line 50 .

[0101] Thus, the substrate processing apparatus 1 can merge the etching liquid flowing in the second circulation line 60 with the first circulation line 50 using the small pump 61 .

[0102] The substrate processing apparatus 1 also includes a mixer 55 (an example of a stirring unit) provided downstream of the connection unit 54 in the first circulation line 50 to stir the etching liquid (an example of the processing liquid).

[0103] Thus, the substrate processing apparatus 1 can stir the etching liquid in the first circulation line 50 after merging with the etching liquid in the second circulation line 60, and can improve the temperature uniformity of the etching liquid. Therefore, for example, the temperature of the etching liquid detected by the temperature sensor 56 can be accurately detected.

[0104] In addition, the substrate processing apparatus 1 includes temperature sensors 48 and 56. The temperature sensor 56 (an example of a first temperature sensor) is disposed at a position downstream of the connection portion 54 in the first circulation line 50, and is used to detect the temperature of the etching liquid (an example of a processing liquid). The temperature sensor 48 (an example of a second temperature sensor) is disposed at the upper portion of the inner tank 43 (an example of a substrate processing tank), and is used to detect the temperature of the etching liquid (an example of a processing liquid) in the inner tank 43.

[0105] Thus, the substrate processing apparatus 1 can accurately detect the temperature difference of the etching liquid in the inner tank 43 .

[0106] In addition, the substrate processing apparatus 1 includes a control device 100. The control device 100 controls the pump 51 (an example of a first liquid delivery unit) and the pump 61 (an example of a second liquid delivery unit). The control device 100 controls the flow rate of the etching liquid (an example of a processing liquid) pressurized and delivered by the pump 61 based on the temperature detected by the temperature sensor 56 (an example of a first temperature sensor).

[0107] Thus, the substrate processing apparatus 1 can adjust the temperature of the etching liquid flowing from the processing liquid supply nozzle 46 into the inner tank 43 by adjusting the flow rate of the etching liquid pressurized and fed in the second circulation line 60. Therefore, the substrate processing apparatus 1 can easily adjust the temperature of the etching liquid flowing from the processing liquid supply nozzle 46 into the inner tank 43.

[0108] In addition, when a first temperature difference between the inflow temperature (an example of the temperature detected by the first temperature sensor) and the temperature in the tank (an example of the temperature detected by the second temperature sensor) is greater than a predetermined first threshold value, the control device 100 controls the flow rate of the etching liquid (an example of the processing liquid) pressurized and delivered by the pump 61 (an example of the second liquid delivery unit) so that the first temperature difference becomes below the first threshold value.

[0109] Thus, the substrate processing apparatus 1 can suppress the increase in the temperature difference of the etching liquid in the inner tank 43, thereby improving the temperature uniformity of the etching liquid in the inner tank 43. Therefore, the substrate processing apparatus 1 can reduce the variation in the etching amount on the substrate 8.

[0110] In addition, when the second temperature difference between the inflow temperature (an example of the temperature detected by the first temperature sensor) and the desired temperature (an example of the pre-set temperature of the processing liquid) is greater than the second threshold value, the control device 100 controls the flow rate of the etching liquid (an example of the processing liquid) pressurized and delivered by the pump 61 (an example of the second liquid delivery unit) so that the second temperature difference becomes below the second threshold value.

[0111] Thus, the substrate processing apparatus 1 can adjust the temperature of the etching liquid flowing into the inner tank 43 through the processing liquid supply nozzle 46 to a desired temperature based on the inflow temperature.

[0112] Next, a substrate processing apparatus 1 according to a modified example will be described.

[0113] The substrate processing apparatus 1 according to the modified example includes a bypass line 62 branching from the second circulation line 60. The bypass line 62 bypasses the connection portion 54 and is connected to a portion of the branch lines 50a of the first circulation line 50. Figure 6 As shown, the bypass line 62 is connected to the branch line 50 a provided at a position facing the lower end of the substrate 8 among the branch lines 50 a . Figure 6 It is a schematic block diagram showing the structure of a processing tank 27 for etching according to a modification of the embodiment.

[0114] In addition, the bypass line 62 may be connected to a plurality of branch lines 50a. In addition, a valve, an orifice, etc. for adjusting the flow rate may be provided in the bypass line 62.

[0115] Thus, the substrate processing apparatus 1 according to the modification can adjust the flow rate and temperature of the etching liquid ejected from the processing liquid supply nozzle 46 according to the position of the substrate 8. Therefore, the substrate processing apparatus 1 according to the modification can improve the temperature uniformity of the etching liquid with respect to the substrate 8.

[0116] In addition, the substrate processing apparatus 1 according to the modified example may adjust the flow rate of the etching liquid by using the pump 51 provided in the first circulation line 50 during the etching process.

[0117] In addition, the substrate processing apparatus 1 involved in the modified example may also connect one end of the second circulation line 60 to the first circulation line 50. That is, the substrate processing apparatus 1 involved in the modified example may also connect both ends of the second circulation line 60 to the first circulation line 50, and connect them in a manner that bypasses the pump 51 and the heater 52 of the first circulation line 50.

[0118] In addition, if Figure 7 As shown, the substrate processing apparatus 1 according to the modified example may also be provided with a filter 63 for removing foreign matter in the etching liquid in the second circulation line 60 . Figure 7 1 is a schematic block diagram showing a structure of an etching treatment tank 27 according to a modification of the embodiment. In the substrate treatment apparatus 1 according to the modification, a filter 53 may be provided in the first circulation line 50 at a position downstream of the connection portion 54 .

[0119] Thus, the substrate processing apparatus 1 according to the modified example can suppress the inclusion of foreign matter in the etching liquid returned to the inner tank 43 .

[0120] In addition, the substrate processing apparatus 1 according to the modification example may be provided with the filter 53 at a position downstream of the connection portion 54. Thus, the substrate processing apparatus 1 according to the modification example can remove impurities in the etching liquid by one filter.

[0121] In addition, the substrate processing apparatuses 1 according to the above-mentioned modified examples can be combined as appropriate. For example, the substrate processing apparatus 1 according to the modified example may be provided with a filter 53 in the second circulation line 60 and a bypass line 62 in the second circulation line 60 .

[0122] In addition, it should be understood that the embodiments disclosed herein are illustrative in all aspects and are not restrictive. In fact, the above embodiments can be implemented in a variety of ways. In addition, the above embodiments can be omitted, replaced, and changed in various ways without departing from the attached claims and their purport.

[0123] Description of Reference Numerals

[0124] 1: substrate processing device; 27: processing tank (substrate processing tank); 43: inner tank; 44: outer tank; 46: processing liquid supply nozzle; 48: temperature sensor (second temperature sensor); 50: first circulation line; 50a: branch line; 51: pump (first liquid supply part); 52: heater (heating part); 53: filter; 54: connecting part; 55: mixer (stirring part); 56: temperature sensor (first temperature sensor); 60: second circulation line; 61: pump (second liquid supply part); 63: filter; 100: control device; 110: control part.

Claims

1. A substrate processing device, comprising: a substrate processing tank for processing the substrate by immersing the substrate in a processing liquid; a first circulation line connected to the substrate processing tank and configured to allow the processing liquid discharged from the substrate processing tank to flow into the substrate processing tank; and a second circulation line connected to the first circulation line and used to merge the processing liquid discharged from the substrate processing tank into the first circulation line; in, The first circulation circuit has: a first liquid delivery unit for delivering the treatment liquid under pressure; a heating unit for heating the treatment liquid; and a filter that removes foreign matter from the process liquid, The second circulation line includes a second liquid supply unit configured to pressurize and supply the processing liquid.

2. The substrate processing device according to claim 1, characterized in that: The second circulation line is connected to a connection portion of the first circulation line that is located downstream of the first liquid supply unit and the heating unit in the flow direction of the processing liquid.

3. The substrate processing device according to claim 2, characterized in that: The invention further includes a stirring portion provided at a position on the downstream side of the connecting portion in the first circulation line, and configured to stir the processing liquid.

4. The substrate processing device according to claim 2 or 3, characterized in that: The first circulation line includes a plurality of branch lines for allowing the processing liquid to flow into the substrate processing tank. The second circulation line includes a bypass line that bypasses the connection portion and is connected to a part of the plurality of branch lines.

5. The substrate processing apparatus according to any one of claims 2 to 4, characterized in that: The second circulation line includes a filter that removes foreign matter in the treatment liquid.

6. The substrate processing apparatus according to any one of claims 2 to 5, characterized in that: Also available: a first temperature sensor disposed in the first circulation line at a position closer to the downstream side than the connecting portion, and configured to detect a temperature of the treatment liquid; and The second temperature sensor is disposed at the upper portion of the substrate processing tank and is used to detect the temperature of the processing liquid in the substrate processing tank.

7. The substrate processing device according to claim 6, characterized in that: further comprising a control device, the control device controlling the first liquid supply unit and the second liquid supply unit, The control device controls a flow rate of the processing liquid pumped under pressure by the second liquid feeding unit based on the temperature detected by the first temperature sensor.

8. The substrate processing device according to claim 7, characterized in that: When a first temperature difference between the temperature detected by the first temperature sensor and the temperature detected by the second temperature sensor is greater than a predetermined first threshold, the control device controls the flow rate of the processing liquid pressurized by the second liquid delivery unit so that the first temperature difference becomes below the first threshold.

9. The substrate processing device according to claim 8, characterized in that: When a second temperature difference between the temperature detected by the first temperature sensor and the predetermined set temperature of the processing liquid is greater than a second threshold value which is smaller than the first threshold value, the control device controls the flow rate of the processing liquid pressurized and delivered by the second liquid delivery part so that the second temperature difference becomes below the second threshold value.

10. A substrate processing method, which is a substrate processing method in a substrate processing apparatus according to any one of claims 7 to 9, the substrate processing method comprising the following steps: detecting temperature by means of the first temperature sensor; and The flow rate of the processing liquid pumped under pressure by the second liquid feeding unit is controlled based on the temperature detected by the first temperature sensor.

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