A method for measuring the switching power consumption of a high-frequency high-voltage power diode

Abstract

The present application relates to a kind of high-frequency high-voltage power diode switch power consumption measurement method, design a kind of measurement system, avoid the inaccurate estimation of complex waveform, obtain current voltage data in high-frequency rectifier circuit by online simulation, calculate forward power PF and reverse power PR, and obtain the corresponding thermal equilibrium stable temperature Ta of total power consumption P after high-frequency high-voltage power diode thermal equilibrium;Again by giving high-frequency high-voltage power diode a forward DC constant current power supply, make high-frequency high-voltage power diode temperature reach Ta, obtain the output power of DC constant current power supply at this time, the same total power consumption, inversely obtain total power consumption P.The advantage is ingenious, use reasonable, compared with prior art, the data measured is accurate, operability is strong and more convenient, can provide accurate and practical data for the design and application research of high-frequency high-voltage power diode.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more specifically to a method for measuring the switching power consumption of a high-frequency, high-voltage power diode. Background Technology

[0002] Current data on the switching power consumption (including both turn-on and turn-off processes) of high-frequency high-voltage power diodes relies on theoretical estimations using current and voltage waveforms, with no research data available on practical measurement methods. Because the relationship between the current, voltage, and time parameters during the turn-on and turn-off processes of high-frequency high-voltage power diodes is complex, although it can be observed with an oscilloscope, the differences in chip manufacturing processes among different manufacturers mean that the current and voltage waveforms for these two processes cannot be expressed by a definite functional relationship. Therefore, the data obtained from existing theoretical estimation methods are inaccurate, limiting the research and development of high-frequency high-voltage power diodes and their application design in complete systems.

[0003] The total power consumption of a high-frequency, high-voltage power diode is P = PF (forward power consumption) + PR (reverse power consumption) + PT (switching power consumption). PT includes two processes: the turn-on effect during the reverse cutoff to forward conduction process and the turn-off effect during the forward conduction to reverse cutoff process. Since VR is larger and trr is longer during the turn-off process than during the turn-on process, PT mainly depends on the latter. The turn-off process consists of two parts: the discharge process of the stored charge during the forward conduction period and the recharging process of the PN junction capacitance by VR. The corresponding times are denoted by ts and tf, respectively, and their total is called the reverse recovery time trr (trr = ts + tf). PT ≈ ∫0 trr vr*irpdt / trr, where trr is the reverse recovery time corresponding to the chip temperature under the current operating conditions. This differs from the value measured at room temperature; the higher the chip temperature, the longer trr, but the relationship is not linear. Due to the complexity of the vr and irp waveforms, they cannot be expressed by a single, definitive function.

[0004] Therefore, the data obtained using theoretical estimation methods are currently inaccurate. Summary of the Invention

[0005] To address the aforementioned technical problems, this invention proposes a method for measuring the switching power consumption of a high-frequency, high-voltage power diode. This method is ingenious and reasonable, avoiding the measurement of complex waveforms and inaccurate estimations. By finding a feasible measurement method, the power PT can be measured.

[0006] The technical solution of this invention:

[0007] A method for measuring the switching power consumption of a high-frequency high-voltage power diode is proposed. A measurement system is designed to avoid inaccurate estimations due to complex waveforms. Current and voltage data are obtained through online simulation of a high-frequency rectifier circuit. The forward power consumption PF and reverse power consumption PR are calculated, and the thermal equilibrium stable temperature Ta corresponding to the total power consumption P after thermal equilibrium is obtained. Then, an adjustable forward DC constant current power supply is applied to the high-frequency high-voltage power diode to bring its temperature back to the thermal equilibrium stable temperature Ta. The output power of the DC constant current power supply at this point is obtained, and this output power is the same as the total power consumption. The total power consumption P is then calculated in reverse. Finally, the switching power consumption PT is calculated as: Total power consumption P of the high-frequency high-voltage power diode - Forward power consumption PF - Reverse power consumption PR.

[0008] The method involves obtaining current and voltage data from an online simulated high-frequency rectifier circuit, calculating the forward power dissipation PF and reverse power dissipation PR, and measuring PF and PR.

[0009] PF = VF * IF * t1 / t, which is the forward voltage drop of the high-frequency high-voltage power diode * forward conduction current * positive duty cycle;

[0010] PR = VR * IR * t2 / t, which is the reverse voltage applied to the high-frequency high-voltage power diode * reverse leakage current * flyback duty cycle.

[0011] The forward and reverse operating parameters VF, IF, VR, IR, t1, t2, and t of the high-frequency high-voltage power diode in the high-frequency rectifier circuit are sampled and measured. By simulating the high-frequency rectifier power supply to do work on the high-frequency high-voltage power diode under test, the voltage VF and current IF in the forward detection circuit, the voltage VR and current IR in the reverse detection circuit, the constant temperature Ta when the surface of the high-frequency high-voltage power diode under test is working normally, and the pulse period t, the forward conduction time t1, and the reverse cutoff time t2 of the high-frequency high-voltage power diode obtained by the pulse detection circuit or oscilloscope are obtained.

[0012] After the high-frequency high-voltage power diode reaches thermal equilibrium, there is a corresponding deterministic relationship between the total power consumption P and the thermal equilibrium stable temperature Ta. The total power consumption P is obtained in this way.

[0013] 1) By fixing a temperature sensor tightly to the middle surface of the high-frequency high-voltage power diode under test, the thermal equilibrium temperature Ta of the high-frequency high-voltage power diode under test, i.e., the thermal equilibrium stability temperature when the temperature is stable and constant, can be measured.

[0014] 2) By applying an adjustable forward DC constant current power supply to the high-frequency high-voltage power diode under test, the diode generates power consumption. The data of P is obtained by reversing the thermal equilibrium stable temperature Ta→P at the middle surface of the diode body. The specific method is as follows:

[0015] By controlling the switch, disconnect the high-frequency rectifier input signal source of the circuit. Connect an adjustable forward DC constant current power supply to the solder joints on the circuit board at both ends of the high-frequency high-voltage power diode under test. By adjusting the DC constant current source voltage U and current IFx, the high-frequency high-voltage power diode is made to enter the forward DC conduction state. At this time, the temperature rise measured by the thermocouple in the middle of the high-frequency high-voltage power diode is Tx. Continue to adjust the current of the constant current source until the temperature rise of the high-frequency high-voltage power diode after thermal equilibrium is equal to the thermal equilibrium stable temperature Ta. Record the DC constant current source voltage U and current Ifa at this time. Then, the output power of the DC constant current power supply at this time = U*Ifa, which can be equivalent to the total power consumption P of the high-frequency high-voltage power diode under high-frequency operation state = U*Ifa.

[0016] Based on the above measurements, the specific data obtained are: t, t1, t2, VF, IF, VR, IR, Ta, U, IFa. These data are then sent to the PLC control display to automatically calculate the switching power consumption PT. PT = P - PF - PR = U * IFa - VF * IF * t1 / t - VR * IR * t2.

[0017] The measurement system includes a high-frequency rectified power supply, a DC constant current power supply, a switch, a high-frequency high-voltage power diode under test, a voltmeter, a forward ammeter, a reverse ammeter, a temperature rise detection unit, a pulse detection unit, a filter capacitor, and a load resistor. The positive terminal of the high-frequency high-voltage power diode under test is connected to one end of the switch, and the other end of the switch can be selectively connected to the positive terminal of either the high-frequency rectified power supply or the DC constant current power supply. The negative terminal of the high-frequency high-voltage power diode under test is connected to the negative terminal of either the high-frequency rectified power supply or the DC constant current power supply via a first line, and a forward ammeter is connected in series on this first line. A reverse ammeter is also connected in parallel outside the forward ammeter. A voltmeter is connected to both ends of the ammeter and the high-frequency high-voltage power diode under test. A temperature rise detection unit is fixed on the surface of the high-frequency high-voltage power diode under test. A pulse detection unit is also connected to the positive terminal of the high-frequency high-voltage power diode under test via a signal line. A voltage / current display module is also designed on the DC constant current power supply. The two ends of the filter capacitor are connected in parallel with the load resistor, and the two ends of the filter capacitor and the load resistor are connected in series on the first circuit. One end of the filter capacitor and the load resistor are connected to the negative terminal of the positive ammeter, and the other end of the filter capacitor and the load resistor are connected to the negative terminal of the high-frequency rectifier power supply or the DC constant current power supply.

[0018] The temperature rise detection unit includes a temperature sensor, the pulse detection unit includes a pulse detection circuit or an oscilloscope, and the switching power consumption measurement system of the high-frequency high-voltage power diode also includes a PLC-controlled display. The PLC-controlled display is connected to the temperature sensor, the pulse detection circuit or oscilloscope, the voltmeter, the forward ammeter, the reverse ammeter, and the voltage / current display module through wires.

[0019] The forward ammeter has a forward safety diode connected in series at its front end, and the reverse ammeter has a reverse safety diode connected in series at its front end; the series circuit of the forward ammeter and the forward safety diode is connected in parallel with the series circuit of the reverse ammeter and the reverse safety diode.

[0020] The two poles of the high-frequency high-voltage power diode under test are pre-mounted on the circuit board. One end of the circuit board is connected to a switch, and the other end of the circuit board is connected to the positive terminal of a forward ammeter.

[0021] The advantages of this invention are its ingenious and reasonable method and simple operation. By simulating a high-frequency rectified power supply to perform work on the high-frequency high-voltage power diode under test, the voltage and current (VF, IF) in the forward detection circuit, the voltage and current (VR, IR) in the reverse detection circuit, the constant temperature (Ta) of the surface of the high-frequency high-voltage power diode under test during normal operation, and the pulse period t, forward conduction time t1, and reverse cutoff time t2 of the high-frequency high-voltage power diode obtained by pulse detection are obtained. Then, by simulating a DC constant current power supply to perform work on the high-frequency high-voltage power diode under test, the current is adjusted to make the thermal equilibrium stable temperature of the surface of the high-frequency high-voltage power diode under test reach (Ta), and the DC power supply voltage U and current Ifa at this time are obtained, which can accurately determine the switching power consumption of the high-voltage silicon stack. Compared with the existing technology (theoretical estimation), this measurement method provides more accurate data, is more operable and more convenient, and can provide accurate and practically significant data for the design and application research of high-frequency high-voltage power diodes (high-frequency high-voltage silicon stacks). Attached Figure Description

[0022] Figure 1 This is a system schematic diagram of the present invention.

[0023] Figure 2 This is a schematic diagram of the high-frequency rectified pulse, diode current waveform, and diode voltage waveform obtained by an oscilloscope in this invention. Detailed Implementation

[0024] See attached document Figure 1-2This invention designs a measurement system that avoids inaccurate estimations based on complex waveforms. It measures potential (PT) through online (experimental circuit or main circuit board) measurement and comparative measurement. The measurement system includes a high-frequency rectified power supply 1, a DC constant current power supply 2, a switch 3, a high-frequency high-voltage power diode under test 4, a voltmeter 5, a forward ammeter 7, a reverse ammeter 9, a temperature rise detection unit 10, a pulse detection unit 11, a filter capacitor 13, and a load resistor 14. The positive terminal of the high-frequency high-voltage power diode 4 is connected to one end of the switch 3. The other end of the switch 3 can be selectively connected to the positive terminal of either the high-frequency rectified power supply 1 or the DC constant current power supply 2. The negative terminal of the high-frequency high-voltage power diode 4 is connected to the negative terminal of either the high-frequency rectified power supply 1 or the DC constant current power supply 2 via a first line, and a forward ammeter 7 is connected in series on this first line. A reverse ammeter is connected in parallel to the outside of the forward ammeter 7. 9. A voltmeter 5 is connected to both ends of the high-frequency high-voltage power diode 4 under test. A temperature rise detection unit 10 is fixed on the surface of the high-frequency high-voltage power diode 4 under test. A pulse detection unit 11 is also connected to the positive terminal of the high-frequency high-voltage power diode 4 under test via a signal line. A voltage / current display module 12 is also designed on the DC constant current power supply 2. The two ends of the filter capacitor 13 are connected in parallel with the load resistor 14, and the two ends of the filter capacitor 13 and the load resistor 14 are connected in series on the first line. One end of the filter capacitor 13 and the load resistor 14 is connected to the negative terminal of the positive ammeter 7, and the other end of the filter capacitor 13 and the load resistor 14 is connected to the negative terminal of the high-frequency rectifier power supply 1 or the DC constant current power supply 2.

[0025] The temperature rise detection unit 10 includes a temperature sensor, the pulse detection unit 11 includes a pulse detection circuit or an oscilloscope, and the power consumption measurement system of the high voltage silicon stack switch 3 also includes a PLC control display 15. The PLC control display 15 is connected to the temperature sensor, the pulse detection circuit or oscilloscope, the voltmeter 5, the forward ammeter 7, the reverse ammeter 9, and the voltage / current display module 12 via wires.

[0026] The forward ammeter 7 has a forward safety diode 71 connected in series at its front end, and the reverse ammeter 9 has a reverse safety diode 91 connected in series at its front end; the series circuit of the forward ammeter 7 and the forward safety diode 71 is connected in parallel with the series circuit of the reverse ammeter 9 and the reverse safety diode.

[0027] The two poles of the high-frequency high-voltage power diode 4 to be tested are pre-installed on the circuit board 6. One end of the circuit board 6 is connected to the switch 3, and the other end of the circuit board 6 is connected to the positive terminal of the positive ammeter 7.

[0028] The total power consumption of a high-frequency high-voltage power diode is P = PF (forward power consumption) + PR (reverse power consumption) + PT (switching power consumption).

[0029] The specific description is as follows:

[0030] Let the period of the high-frequency pulse be t, the forward conduction time of the high-frequency high-voltage power diode be t1, and the reverse cutoff time of the high-frequency high-voltage power diode be t2.

[0031] (1) Measure PF and PT

[0032] PF = VF * IF * t1 / t, which is the forward voltage drop of the high-frequency high-voltage power diode * forward conduction current * positive duty cycle;

[0033] PR = VR * IR * t2 / t, which is the reverse voltage applied to the high-frequency high-voltage power diode * reverse leakage current * flyback duty cycle.

[0034] The forward and reverse operating parameters VF, IF, VR, IR, t1, t2, and t of the high-frequency high-voltage power diode in the high-frequency rectifier circuit (experimental circuit or complete circuit) are sampled and measured. By simulating the high-frequency rectifier power supply doing work on the high-frequency high-voltage power diode under test, the voltage and current (VF, IF) in the forward detection circuit, the voltage and current (VR, IR) in the reverse detection circuit, the constant temperature (Ta) of the surface of the high-frequency high-voltage power diode under test when it is working normally, and the pulse period t, the forward conduction time t1, and the reverse cutoff time t2 of the high-frequency high-voltage power diode obtained by the pulse detection circuit or oscilloscope are obtained. The above data can be read directly or transmitted to the PLC control display via signals.

[0035] (2) Because PT cannot be directly measured, the total power consumption P cannot be directly measured or calculated either. (Currently, the high-frequency rectifier circuits on the market include inductive circuits composed of rectifier diodes, filter capacitors, transformers and loads. Although the total power output of the circuit at high frequency can be measured, the circuit state may be changed due to the connection of complex sensors. Therefore, it is very difficult to measure the power consumption or loss of each component, especially nonlinear devices such as high-frequency high-voltage power diodes.)

[0036] (3) However, the total power consumption P will cause the high-frequency high-voltage power diode chip to heat up and generate temperature. The thermal equilibrium stable temperature (temperature rise) Ta is the surface of its package (tube body) (take the middle position of the tube body corresponding to the chip). Therefore, after the high-frequency high-voltage power diode reaches thermal equilibrium, the total power consumption P and the thermal equilibrium stable temperature Ta have a corresponding deterministic relationship.

[0037] (4) Fix a temperature sensor (which can be a thermocouple or an infrared non-contact measurement method, but the infrared method has a large error and poor repeatability) to the middle surface of the high-frequency high-voltage power diode under test. This will allow you to measure the thermal equilibrium stable temperature Ta of the high-frequency high-voltage power diode when it is in thermal equilibrium (i.e., the temperature is stable and does not change).

[0038] (5) In addition, by applying a forward DC constant current power supply to the sample, the high-frequency high-voltage power diode under test is made to generate power consumption, and the data of P is obtained by reversing the thermal equilibrium stable temperature Ta→P of the middle surface of the high-frequency high-voltage power diode under test; the specific method is as follows:

[0039] Disconnect the high-frequency rectified input signal source of the circuit by controlling the switch. Connect an adjustable forward DC constant current power supply to the solder points on the circuit board at both ends of the high-frequency high-voltage power diode under test (do not connect the constant current source directly to the pins of the high-frequency high-voltage power diode using clips and wires, as this may cause heat dissipation and affect the accuracy of the measurement). By adjusting the DC constant current source voltage U and current IFx, the high-frequency high-voltage power diode is brought into the forward DC conduction state. At this time, the temperature rise measured by the thermocouple in the middle of the tube is Tx. Continue to adjust the current of the constant current source until the temperature rise after the diode reaches thermal equilibrium is equal to Ta. Record the DC constant current source voltage U and current Ifa at this time. Then, the output power of the DC constant current power supply at this time = U*Ifa, which can be equivalent to the total power consumption P of the diode under high-frequency operation.

[0040] (6) After the above measurements, the specific data (t, t1, t2, VF, IF, VR, IR, Ta, U, IFa) obtained are sent to the PLC control display, and the switching power consumption PT can be calculated (PT=P-PF-PR=U*Ifa-VF*IF*t1 / t-VR*IR*t2). PT is: the switching power consumption of the high-frequency high-voltage power diode under the following working conditions: pulse period is t, forward conduction period of high-frequency high-voltage power diode is t1, reverse cutoff period of high-frequency high-voltage power diode is t2, and the temperature rise of the middle part of the high-frequency high-voltage power diode is the thermal equilibrium stable temperature Ta.

[0041] This invention can accurately and intuitively detect and display the switching power consumption and other relevant operating parameters of high-frequency, high-voltage power diodes, providing accurate data for research and development and applications.

Claims

1. A method for measuring the switching power consumption of a high-frequency high-voltage power diode, the total power consumption P of the high-frequency high-voltage power diode = forward power consumption PF + reverse power consumption PR + switching power consumption PT; characterized in that, A measuring system is designed to avoid inaccurate estimation of complex waveforms. Current and voltage data are obtained by online simulation of high-frequency rectifier circuit, forward power PF and reverse power PR are calculated, and after thermal equilibrium of high-frequency high-voltage power diode, the corresponding thermal equilibrium stable temperature Ta of total power P is obtained. Then, an adjustable forward DC constant current source is applied to the high-frequency high-voltage power diode, so that the temperature of the high-frequency high-voltage power diode also reaches the thermal equilibrium stable temperature Ta, and the output power of the DC constant current source at this time is obtained, which is the same as the total power. The total power P is obtained inversely, and finally the switching power PT is obtained by calculation, which is the total power P of the high-frequency high-voltage power diode minus the forward power PF and the reverse power PR.

2. The method of claim 1, wherein the method further comprises: The current and voltage data are obtained by online simulation of high-frequency rectifier circuit, and the forward power PF and the reverse power PR are calculated. Specifically, PF and PT are measured as follows: PF=VF*IF*t1 / t, i.e. the forward voltage drop of high-frequency high-voltage power diode * forward conduction current * forward duty cycle; PR=VR*IR*t2 / t, i.e. the reverse voltage applied to high-frequency high-voltage power diode * reverse leakage current * reverse duty cycle; The forward and reverse working parameters VF, IF, VR, IR, t1, t2 and t of the high-frequency high-voltage power diode in the high-frequency rectifier circuit are sampled and measured. The voltage VF and current IF in the forward detection circuit, the voltage VR and current IR in the reverse detection circuit, the constant temperature Ta of the high-frequency high-voltage power diode under normal working condition, and a pulse period t obtained by pulse detection circuit or oscilloscope, the forward conduction time t1 of high-frequency high-voltage power diode, and the reverse cut-off time t2 of high-frequency high-voltage power diode are obtained by simulating the work of high-frequency rectifier power supply on the high-frequency high-voltage power diode to be tested.

3. The method for measuring the switching power consumption of a high-frequency high-voltage power diode according to claim 1, characterized in that, The total power P and the thermal equilibrium stable temperature Ta have a corresponding deterministic relationship after the thermal equilibrium of the high-frequency high-voltage power diode, and the total power P is obtained through the relationship; 1) The thermal equilibrium stable temperature Ta of the high-frequency high-voltage power diode to be tested can be measured when the thermal equilibrium of the high-frequency high-voltage power diode to be tested is stable and unchanged by fixing a temperature sensor on the surface of the middle part of the tube body of the high-frequency high-voltage power diode to be tested; 2) The data of P is obtained inversely from the thermal equilibrium stable temperature Ta of the middle part of the tube body of the high-frequency high-voltage power diode to be tested by applying an adjustable forward DC constant current source to the high-frequency high-voltage power diode to be tested to make the high-frequency high-voltage power diode to be tested generate power. The specific method is as follows: By controlling the switch, the high-frequency rectification input signal source is disconnected, the adjustable forward DC constant current power supply is connected to the welding point on the circuit board between the high-frequency high-voltage power diode to be tested, the high-frequency high-voltage power diode is brought into the forward DC conduction state by adjusting the DC constant current power supply voltage U and current IFx, at this time, the temperature sensor in the middle of the tube body of the high-frequency high-voltage power diode to be tested measures the temperature rise Tx, the current of the DC constant current power supply is continuously adjusted until the temperature rise of the high-frequency high-voltage power diode after thermal equilibrium is equal to the thermal equilibrium stable temperature Ta, and the DC constant current power supply voltage U and current Ifa at this time are recorded, then the output power of the DC constant current power supply at this time is U*Ifa, which can be equivalent to the total power consumption P=U*Ifa of the high-frequency high-voltage power diode under high-frequency working state.

4. The method of claim 2 or 3, wherein the method further comprises: Through the above measurement, the specific data t, t1, t2, VF, IF, VR, IR, Ta, U, IFa detected are sent to the PLC control display, and the switching power consumption PT is automatically calculated as P-PF-PR=U*Ifa-VF*IF*t1 / t-VR*IR*t2.

5. The method of claim 1 or 2 or 3, wherein, The measurement system comprises a high-frequency rectification power supply, a DC constant current power supply, a switch, a high-frequency high-voltage power diode to be tested, a voltmeter, a forward ammeter, a reverse ammeter, a temperature rise detection part, a pulse detection part, a filter capacitor and a load resistor, one end of the positive side of the high-frequency high-voltage power diode to be tested is connected to one end of the switch, the other end of the switch is selectively controlled to be connected to the positive end of the high-frequency rectification power supply or the DC constant current power supply, the negative side of the high-frequency high-voltage power diode to be tested is connected to the negative end of the high-frequency rectification power supply or the DC constant current power supply through a first circuit, and a forward ammeter is further connected in series on the first circuit, a reverse ammeter is further connected in parallel outside the forward ammeter, the two ends of the high-frequency high-voltage power diode to be tested are connected to the voltmeter, and the temperature rise detection part is fixed on the surface of the high-frequency high-voltage power diode to be tested; the positive side of the high-frequency high-voltage power diode to be tested is further connected to the pulse detection part through a signal line; the DC constant current power supply is further designed with a voltage / current display module; the two ends of the filter capacitor are connected in parallel to the load resistor, and the two ends of the filter capacitor and the load resistor are connected in series on the first circuit, one end of the filter capacitor and the load resistor is connected to the negative end of the forward ammeter, and the other end of the filter capacitor and the load resistor is connected to the negative end of the high-frequency rectification power supply or the DC constant current power supply.

6. The method of claim 5, wherein the method further comprises: The temperature rise detection part comprises a temperature sensor, the pulse detection part comprises a pulse detection circuit or an oscilloscope, and the switching power consumption measurement system of the high-frequency high-voltage power diode further comprises a PLC control display, which is connected to the temperature sensor, the pulse detection circuit or the oscilloscope, the voltmeter, the forward ammeter, the reverse ammeter and the voltage / current display module through wires.

7. The method of claim 5, wherein the method further comprises: A forward safety diode is connected in series in front of the forward ammeter, and a reverse safety diode is connected in series in front of the reverse ammeter; the forward ammeter and the forward safety diode series circuit are connected in parallel with the reverse ammeter and the reverse safety diode series circuit.

8. The method of claim 5, wherein the method further comprises: The two poles of the high-frequency high-voltage power diode are installed on the circuit board in advance, one end of the circuit board is connected with a switch, and the other end of the circuit board is connected with the positive end of a forward current meter.

Images