Semiconductor heat treatment process equipment, method and metal film wettability evaluation method

Abstract

The present invention discloses a semiconductor heat treatment process apparatus, method, and metal film wettability evaluation method. The apparatus includes: a heat treatment chamber, wherein the heat treatment chamber is provided with a wafer support mechanism, a wafer lifting mechanism, and a film wettability detection mechanism located above the wafer support mechanism; the wafer support mechanism is used to support and heat the wafer; the wafer lifting mechanism is used to lift the wafer located on the wafer support mechanism to a detection position for metal film wettability detection, and to lower the wafer from the detection position onto the wafer support mechanism for heat treatment; the film wettability detection mechanism is used to contact the metal film when the wafer is raised to the detection position, detect the sheet resistance of the metal film, and evaluate the wettability of the metal film based on the sheet resistance value of the metal film. The present invention can realize in-situ detection and evaluation of the wettability of the metal film during the heat treatment process.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor heat treatment technology, and more specifically, to a semiconductor heat treatment process equipment, method and metal film wettability evaluation method. Background Art

[0002] The metal interconnect process is a crucial step in integrated circuit manufacturing. With the continuous advancement of integrated circuit technology, the metal interconnect process has evolved from early aluminum wiring processes to current copper interconnect processes. More advanced processes may also include cobalt interconnect processes. The copper interconnect process typically involves depositing a uniform barrier layer (typically TaN / Ta), followed by a thin, uniform Cu seed layer (also known as a seed layer). The hole is then filled with Cu electroplating (ECPCu), and chemical mechanical polishing (CMP) is used to remove the metal deposited outside the hole.

[0003] As the line width of metal interconnects becomes increasingly narrow, the copper seed layer must be as thin as possible to leave enough space for subsequent electrochemical hole filling. This places higher demands on the metal seed layer, requiring not only higher hole coverage but also continuous deposition of the film within the hole. This requires good wettability between the metal film and the material it contacts, otherwise discontinuous film deposition will occur, affecting the subsequent electroplating filling process. Figure 1a It shows the situation of good wettability, high seed layer coverage and continuous film. Figure 1b It shows the situation where poor wettability leads to discontinuous seed layer film.

[0004] As mentioned above, the wettability between the interconnect metal film and the dielectric material it contacts is very important. The better the wettability, the better the film continuity (such as Figure 2a and Figure 2b shown).

[0005] The current existing method for evaluating the wettability of thin films relies on optical microscopy or electron microscopy to observe the continuity of the thin film on the substrate. It requires repeated heat treatment on a heat treatment machine and testing on a test machine, which is cumbersome and time-consuming. Summary of the Invention

[0006] The purpose of the present invention is to provide a semiconductor heat treatment process equipment, method and metal film wettability evaluation method to achieve in-situ detection and evaluation of the wettability of the metal film during the heat treatment process.

[0007] In a first aspect, the present invention provides a semiconductor heat treatment process equipment, comprising: a heat treatment chamber, wherein a wafer support mechanism, a wafer lifting mechanism, and a thin film wettability detection mechanism located above the wafer support mechanism are provided in the heat treatment chamber;

[0008] The wafer supporting mechanism is used to support and heat the wafer, and a metal film of a set thickness is deposited on the surface of the wafer;

[0009] The wafer lifting mechanism is used to lift the wafer located on the wafer supporting mechanism to a testing position for metal film wettability testing, and to lower the wafer from the testing position to the wafer supporting mechanism for heat treatment;

[0010] The film wettability detection mechanism is used to contact the metal film when the wafer rises to the detection position, detect the surface resistance of the metal film, and evaluate the wettability of the metal film according to the surface resistance value of the metal film.

[0011] Optionally, the film wettability detection mechanism includes a measuring unit and an evaluation unit; wherein,

[0012] The measuring unit is used to measure the initial sheet resistance value of the metal film of the wafer before heat treatment; and to measure the first sheet resistance value of the metal film after heat treatment is completed;

[0013] The evaluation unit is used to evaluate the wettability of the metal film before heat treatment based on the initial surface resistance value, and to evaluate the wettability of the metal film after heat treatment based on the first surface resistance value; wherein the initial surface resistance value and the first surface resistance value are both negatively correlated with the wettability of the metal film.

[0014] Optionally, the evaluation unit is further configured to evaluate a change in wettability of the metal film based on a ratio of the first sheet resistance value to the initial sheet resistance.

[0015] Optionally, the evaluation unit is specifically configured to:

[0016] Calculate the ratio of the first surface resistance value to the initial surface resistance value, and compare the ratio with the set value to determine whether the ratio is less than the set value. If so, it is determined that the wettability of the metal film meets the process requirements; otherwise, it is determined that the wettability of the metal film does not meet the process requirements.

[0017] Optionally, the measuring unit includes a test support ring, a plurality of test cantilevers and a sheet resistance measurement assembly;

[0018] A plurality of the test cantilevers are arranged above the wafer support mechanism at equal intervals along the circumference of the test support ring, and the test cantilevers are arranged along the radial direction of the test support ring;

[0019] The test support ring is connected to the side wall of the heat treatment chamber, one end of the test cantilever is connected to the test support ring, and the test probe is provided at the other end of the test cantilever. The test probe is disposed toward the wafer support mechanism, and the test probe is used to contact the surface of the metal film when the wafer rises to the test position;

[0020] The sheet resistance measuring component is electrically connected to the test probe, and is used to measure the sheet resistance value of the metal film when the test probe contacts the surface of the metal film.

[0021] Optionally, the heat treatment chamber includes a chamber body, a chamber insulating ring located on the chamber body, and a chamber cover located on the chamber insulating ring. The inner top edge of the chamber insulating ring is provided with an annular step, the outer edge of the test support ring is resting on the annular step, the inner edge of the test support ring is provided with a laterally extending folded edge, and one end of the test cantilever is connected to the folded edge.

[0022] Optionally, the wafer support mechanism includes a heating base provided at the bottom of the heat treatment chamber;

[0023] The wafer lifting mechanism includes an ejector pin assembly and an ejector pin lifting mechanism connected to the ejector pin assembly, and the ejector pin lifting mechanism is arranged below the heating base;

[0024] The ejector pin assembly includes a plurality of longitudinally arranged ejector pins. The heating base is provided with a through hole for accommodating the ejector pins to pass through. The ejector pin lifting mechanism is used to drive the ejector pin assembly to move up and down so as to lift the wafer up and down.

[0025] In a second aspect, the present invention provides a heat treatment method, using any semiconductor heat treatment process equipment described in the first aspect, the method comprising:

[0026] S11: transferring a wafer with a metal film pre-deposited on its surface to the wafer support mechanism in the heat treatment chamber;

[0027] S12: Lifting the wafer to the test position by the wafer lifting mechanism;

[0028] S13: measuring the initial surface resistance of the metal film by the film wettability detection mechanism;

[0029] S14: lowering the wafer onto the wafer supporting mechanism through the wafer lifting mechanism, and performing a heat treatment under set process conditions on the wafer;

[0030] S15: After the heat treatment is completed, the wafer is again lifted to the test position by the wafer lifting mechanism, and the first surface resistance value of the metal film is measured by the film wettability detection mechanism;

[0031] S16: Calculate whether the ratio of the first sheet resistance value to the initial sheet resistance value is less than a set value. If so, perform subsequent processes on the wafer that has completed the heat treatment. Otherwise, execute step S17.

[0032] S17: Perform additional deposition on the metal film on the wafer, and return to step S1.

[0033] In a third aspect, the present invention provides a method for evaluating the wettability of a metal film, using the semiconductor heat treatment process equipment described in any one of the first aspects, the method comprising:

[0034] S21: transferring a wafer with a metal film pre-deposited on its surface to the wafer support mechanism in the heat treatment chamber;

[0035] S22: Lifting the wafer to the testing position by the wafer lifting mechanism;

[0036] S23: measuring the initial surface resistance of the metal film by the film wettability detection mechanism;

[0037] S24: evaluating the wettability of the metal film based on the initial sheet resistance value, wherein the initial sheet resistance value is inversely proportional to the wettability of the metal film;

[0038] S25: lowering the wafer onto the wafer supporting mechanism through the wafer lifting mechanism, and performing a heat treatment under set process conditions on the wafer;

[0039] S26: After the heat treatment is completed, the wafer is again lifted to the test position by the wafer lifting mechanism, and the second surface resistance value of the metal film is measured by the film wettability detection mechanism;

[0040] S27: adjusting the first process parameter value in the heat treatment process conditions and keeping the other process parameter values ​​unchanged, repeating steps S25-S26 for a set number of times to obtain a plurality of second sheet resistance values ​​corresponding to different first process parameter values;

[0041] S28: Based on the ratio of multiple second surface resistance values ​​to the initial surface resistance value, evaluate the influence of different first process parameter values ​​on the wettability of the metal film during the heat treatment process. The larger the ratio of the second surface resistance value to the initial surface resistance value, the worse the continuity of the metal film.

[0042] Optionally, the first process parameter is one of the heating temperature of the wafer, the chamber pressure and the heat treatment process duration.

[0043] The beneficial effects of the present invention are:

[0044] The heat treatment equipment of the present invention is capable of measuring the surface resistance of the metal film deposited on the surface of the wafer when the wafer lifting mechanism lifts the wafer to the test position by arranging a thin film wettability detection mechanism in the chamber. The continuity and wettability of the pre-deposited metal film can be judged by the measured surface resistance value. The surface resistance value of the metal film that has completed the heat treatment can also be measured again to detect and evaluate the continuity and wettability of the metal film after the heat treatment.

[0045] The heat treatment method of the present invention can realize in-situ initial wettability detection of the heat-treated metal film, and can also detect the wettability of the metal film that has completed the heat treatment during the heat treatment process. If the wettability of the metal film after heat treatment meets the set conditions, the subsequent process can be carried out. If the set conditions are not met, the metal film can be supplementally deposited. Compared with the traditional repeated heat treatment on a heat treatment machine and testing on a test machine, in-situ wettability detection is realized in the heat treatment equipment, which effectively improves the test efficiency and test convenience, ensures the continuity of the metal film in the heat treatment process, and thus improves the heat treatment efficiency and product yield.

[0046] The metal film wettability evaluation method of the present invention realizes in-situ evaluation of the metal film wettability, and can also evaluate the influence of different heat treatment process conditions on the metal film wettability, providing a better experimental method for optimizing and improving the heat treatment process conditions.

[0047] The system of the present invention has other features and advantages that will be apparent from or will be described in detail in the accompanying drawings and subsequent detailed description incorporated herein, which together serve to explain the specific principles of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] The above and other objects, features and advantages of the present invention will become more apparent through a more detailed description of exemplary embodiments of the present invention with reference to the accompanying drawings, in which like reference numerals generally represent like components.

[0049] Figure 1a and Figure 1b Schematic diagrams showing the continuous and discontinuous seed layer films respectively.

[0050] Figure 2a Shows the side view of the metal film distributed continuously and discontinuously on the substrate.

[0051] Figure 2b The top views of the metal film are shown as continuous and discontinuous distribution on the substrate.

[0052] Figure 3 A schematic diagram showing an existing method for evaluating thin film wettability.

[0053] Figure 4 A schematic structural diagram of a semiconductor heat treatment process equipment according to embodiment 1 of the present invention is shown.

[0054] Figure 5 A top view of a test support ring and a test cantilever in a semiconductor thermal treatment process equipment according to embodiment 1 of the present invention is shown.

[0055] Figure 6 A flow chart showing the steps of a heat treatment method according to Example 2 of the present invention is shown.

[0056] Figure 7 A schematic diagram showing the effects of different heat treatment temperatures on the wettability of a metal film in a method for evaluating the wettability of a metal film according to Example 3 of the present invention is shown.

[0057] Figure 8 A schematic diagram showing the effects of different heat treatment pressures on the wettability of a metal film in a method for evaluating the wettability of a metal film according to Example 3 of the present invention is shown. DETAILED DESCRIPTION

[0058] The existing method for evaluating the wettability of thin films is to deposit a certain thickness of metal film on a substrate and measure the contact angle between the film and the substrate using an optical microscope or an electron microscope. The larger the contact angle, the worse the wettability and the worse the continuity of the film; on the contrary, the smaller the contact angle, the better the wettability and the more continuous the film. Figure 3 If you want to evaluate the effect of heat treatment (such as thermal annealing) on ​​the wettability of the film, you need to first perform post-treatment (such as thermal annealing) on ​​the film in a heat treatment machine, and then observe the wettability of the film in a test machine.

[0059] This method cannot evaluate the wettability of the film in situ. If it is necessary to evaluate the influence of different heat treatment processes (such as heat treatment temperature and heat treatment pressure) on the wettability, it is necessary to repeatedly perform heat treatment on a heat treatment machine and test on a test machine, which is cumbersome and time-consuming.

[0060] In this regard, the present invention proposes a semiconductor heat treatment process equipment, method and metal film wettability evaluation method, which evaluates the continuity of the metal film and then the wettability of the film by measuring the surface resistance of the metal film; and combines the surface resistance measurement device into the heat treatment chamber to realize in-situ measurement of the impact of the heat treatment process on the wettability of the metal film.

[0061] The present invention will now be described in more detail with reference to the accompanying drawings. While preferred embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention may be implemented in various forms and is not limited to the embodiments set forth herein. Rather, these embodiments are provided to make the present invention more thorough and complete and to fully convey the scope of the present invention to those skilled in the art.

[0062] Example 1

[0063] like Figure 4 As shown, this embodiment provides a semiconductor thermal treatment process equipment, the equipment comprising:

[0064] A heat treatment chamber is provided with a wafer support mechanism, a wafer lifting mechanism, and a film wettability detection mechanism located above the wafer support mechanism;

[0065] The wafer support mechanism is used to support and heat the wafer 4, and a metal film of a set thickness is deposited on the surface of the wafer 4;

[0066] The wafer lifting mechanism is used to lift the wafer 4 located on the wafer supporting mechanism to the inspection position for metal film wettability inspection, and to lower the wafer 4 from the inspection position to the wafer supporting mechanism for heat treatment;

[0067] The film wettability detection mechanism is used to contact the metal film when the wafer 4 rises to the detection position, detect the surface resistance of the metal film, and evaluate the wettability of the metal film according to the surface resistance value of the metal film.

[0068] Specifically, the semiconductor heat treatment process equipment of this embodiment can measure the surface resistance of the metal film through the wafer lifting mechanism and the film wettability detection mechanism to evaluate the continuity and wettability of the metal film. Under the same metal film deposition process, the larger the surface resistance R, the more discontinuous the metal film and the worse the wettability; the smaller the surface resistance R, the more continuous the metal film and the better the wettability.

[0069] Preferably, the film wettability detection mechanism may include a measuring unit and an evaluation unit; wherein the measuring unit is used to measure the initial sheet resistance value of the metal film on the wafer before heat treatment; and, after the heat treatment is completed, to measure the first sheet resistance value of the metal film; and the evaluation unit is used to evaluate the wettability of the metal film before heat treatment based on the initial sheet resistance value, and to evaluate the wettability of the metal film after heat treatment based on the first sheet resistance value; wherein the initial sheet resistance value and the first sheet resistance value are both negatively correlated with the wettability of the metal film. In this way, the sheet resistance value of the metal film on the wafer before and after heat treatment can be measured by the measuring unit, and the wettability of the metal film before and after heat treatment can be evaluated by the evaluation unit based on the initial sheet resistance value and the first sheet resistance value, respectively, thereby achieving in-situ detection of the wettability of the metal film without removing the wafer from the test machine for testing.

[0070] Preferably, the evaluation unit can also be used to evaluate the change in wettability of the metal film based on the ratio of the first sheet resistance value to the initial sheet resistance value. Specifically, the evaluation unit is specifically used to calculate the ratio of the first sheet resistance value to the initial sheet resistance value, and compare the ratio with a set value to determine whether the ratio is less than the set value. If so, it is determined that the wettability of the metal film meets the process requirements; otherwise, it is determined that the wettability of the metal film does not meet the process requirements. By comparing the ratio with the preset value, the change in wettability of the metal film after the heat treatment process can be obtained, and then it can be determined whether the metal film after the heat treatment meets the process requirements. If the ratio is less than the preset value, it means that the metal film after the heat treatment meets the process requirements and the next process can be carried out. Otherwise, it means that the metal film after the heat treatment does not meet the process requirements and needs to be supplemented with deposition to ensure that the wettability and continuity of the metal film meet the requirements of the subsequent process.

[0071] like Figure 5 As shown, in this embodiment, the measuring unit of the thin film wettability detection mechanism may include a test support ring 10 and a plurality of test cantilevers 11;

[0072] A plurality of test cantilevers 11 are arranged above the wafer support mechanism at equal intervals along the circumference of the test support ring 10, and the test cantilevers 11 are extended along the radial direction of the test support ring 10;

[0073] The test support ring 10 is connected to the side wall of the heat treatment chamber 9, one end of the test cantilever 11 is connected to the test support ring 10, and a test probe 12 is arranged at the other end of the test cantilever 11. The test probe 12 is arranged facing the wafer support mechanism, and the test probe 12 is used to contact the surface of the metal film when the wafer 4 rises to the test position.

[0074] In this embodiment, the measurement unit of the thin film wettability detection mechanism may further include a sheet resistance measurement component electrically connected to the test probe 12 and configured to measure the sheet resistance of the metal film when the test probe 12 contacts the surface of the metal film. The sheet resistance measurement component may be a resistance measuring element such as a resistance meter.

[0075] In this embodiment, the heat treatment chamber includes a cavity 9, a chamber insulating ring 3 located on the cavity 9, and a chamber cover 2 located on the chamber insulating ring 3. The inner top edge of the chamber insulating ring 3 is provided with an annular step, the outer edge of the test support ring 10 is placed on the annular step, the inner edge of the test support ring 10 is provided with a laterally extending folded edge, and one end of the test cantilever 11 is connected to the folded edge.

[0076] In this embodiment, the wafer support mechanism includes a heating base 5 disposed at the bottom of the heat treatment chamber 9;

[0077] The wafer lifting mechanism includes an ejector pin assembly and an ejector pin lifting mechanism 7 connected to the ejector pin assembly. The ejector pin lifting mechanism 7 is arranged below the heating base 5.

[0078] The ejector pin assembly includes a plurality of longitudinally arranged ejector pins 6 . The heating base 5 is provided with through holes for accommodating the ejector pins 6 to pass through. The ejector pin lifting mechanism 7 drives the ejector pin assembly to move the wafer 4 up or down.

[0079] In this embodiment, the heat treatment chamber further includes an air inlet pipe 1 and an air extraction pipe 8. The air inlet pipe 1 is connected to the top of the heat treatment chamber, and the air extraction pipe 8 is connected to the bottom of the heat treatment chamber.

[0080] Example 2

[0081] like Figure 6 As shown, this embodiment provides a heat treatment method, using the semiconductor heat treatment process equipment of Example 1, the method includes:

[0082] S11: The wafer 4 with a metal film pre-deposited on its surface is introduced into the wafer support mechanism in the heat treatment chamber;

[0083] Specifically, a metal thin film, such as a Cu, Co, TiN or other metal thin film, may be deposited on the substrate in advance.

[0084] S12: Lifting wafer 4 to a test position via a wafer lifting mechanism;

[0085] S13: measuring the initial surface resistance of the metal film by a film wettability detection mechanism;

[0086] Specifically, the initial sheet resistance R0 of the metal film is measured at a high position.

[0087] The wettability of the metal film can be evaluated based on the initial sheet resistance value, wherein the larger the sheet resistance value, the worse the wettability of the metal film;

[0088] S14: lowering the wafer 4 onto the wafer support mechanism via the wafer lifting mechanism, and performing a heat treatment under set process conditions on the wafer 4;

[0089] Specifically, the metal film is subjected to heat treatment under certain conditions by descending to a low heat treatment position, usually controlling a certain base temperature, a certain cavity pressure and a certain process time.

[0090] S15: After the heat treatment is completed, the wafer 4 is lifted to the test position again by the wafer lifting mechanism, and the first surface resistance value of the metal film is measured by the film wettability detection mechanism;

[0091] Specifically, the substrate is lifted to a high position to measure and obtain the surface resistance R1 of the metal film after heat treatment, which is used to evaluate the wettability of the metal film after heat treatment.

[0092] S16: Calculate whether the ratio of the first sheet resistance value to the initial sheet resistance value is less than a set value. If so, perform subsequent processes on the wafer 4 that has completed the heat treatment. Otherwise, execute step S17. The larger the ratio of the first sheet resistance value to the initial sheet resistance value, the worse the continuity of the metal film.

[0093] S17: Perform additional deposition on the metal film on the wafer 4 and return to step S11.

[0094] Specifically, the substrate is lifted to a high position to measure the surface resistance R1 of the metal film after heat treatment, which is used to evaluate the wettability of the metal film after heat treatment; the change in wettability is judged by R1 / R0. If R1 / R0 is lower than a certain value (such as <2), the pre-deposited metal film needs to be supplementally deposited so that the wettability and continuity of the metal film meet the requirements before proceeding to the next process.

[0095] The heat treatment method of the present invention can realize in-situ initial wettability detection of the heat-treated metal film, and can also detect the wettability of the metal film that has completed the heat treatment during the heat treatment process. If the wettability of the metal film after heat treatment meets the set conditions, the subsequent process can be carried out. If the set conditions are not met, the metal film can be supplementally deposited. Compared with the traditional repeated heat treatment on a heat treatment machine and testing on a test machine, in-situ wettability detection is realized in the heat treatment equipment, which effectively improves the test efficiency and test convenience, ensures the continuity of the metal film in the heat treatment process, and thus improves the heat treatment efficiency and product yield.

[0096] Example 3

[0097] This embodiment provides a method for evaluating the wettability of a metal film, using the semiconductor heat treatment process equipment of embodiment 1, the method comprising:

[0098] S21: The wafer 4 with the metal film pre-deposited on the surface is introduced into the wafer support mechanism in the heat treatment chamber;

[0099] S22: Lifting wafer 4 to a test position via a wafer lifting mechanism;

[0100] S23: measuring the initial surface resistance of the metal film by a film wettability detection mechanism;

[0101] S24: evaluating the wettability of the metal film based on the initial sheet resistance value, wherein the initial sheet resistance value is negatively correlated with the wettability of the metal film;

[0102] S25: lowering the wafer 4 onto the wafer support mechanism via the wafer lifting mechanism, and performing a heat treatment under set process conditions on the wafer 4;

[0103] S26: After the heat treatment is completed, the wafer 4 is lifted to the test position again by the wafer lifting mechanism, and the second surface resistance value of the metal film is measured by the film wettability detection mechanism;

[0104] S27: adjusting the first process parameter value in the heat treatment process conditions and keeping the other process parameter values ​​unchanged, repeating steps S25-S26 for a set number of times to obtain a plurality of second sheet resistance values ​​corresponding to different first process parameter values;

[0105] S28: Based on the ratio of multiple second surface resistance values ​​to the initial surface resistance value, evaluate the influence of different first process parameter values ​​on the wettability of the metal film during the heat treatment process. The larger the ratio of the first surface resistance value to the initial surface resistance value, the worse the continuity of the metal film.

[0106] The first process parameter is one of the heating temperature of the wafer 4 , the chamber pressure, and the heat treatment process duration.

[0107] In a specific example, the first process parameter is the heating temperature of the wafer 4 (ie, the temperature of the heating base 5 ), and the specific evaluation method is as follows:

[0108] The wafer 4 with a metal film of a certain thickness deposited thereon is transferred into a heat treatment chamber, and the metal film surface resistance R0 is measured at a high-position test position to evaluate the wettability of the pre-deposited metal film.

[0109] Then it is lowered to the low heat treatment position (on the heating base 5), the temperature of the heating base 5 is set to T1, and the metal film is heat treated for a certain period of time;

[0110] Then, the wafer 4 is lifted to a high position and the metal film surface resistance R is measured.T1 , and then get the surface resistance ratio R T1 / R0.

[0111] The temperature of the base 5 is set to T2, and the above heat treatment process is repeated to obtain the surface resistance R of the metal film after different heat treatment temperatures. Tn . Further obtain the surface resistance ratio R T1 / R0,R T2 / R0,…R Tn / R0(such as Figure 7 The influence of different heat treatment conditions on the wettability of the metal film can be evaluated through different surface resistance ratios. The larger the ratio, the worse the continuity of the metal film and the worse the wettability.

[0112] In another specific example, the first process parameter is chamber pressure, and the specific evaluation method is as follows:

[0113] The wafer 4 with a metal film of a certain thickness is transferred into the chamber, and the metal film surface resistance R0 is measured at the high test position to evaluate the wettability of the pre-deposited metal film.

[0114] Then it is lowered to the low heat treatment position, the heating base 5 is set to a certain temperature, a certain amount of inert gas such as Ar (He, N2) is introduced into the chamber through the inlet pipe 1, the chamber pressure is maintained at P1, and the metal film is heat treated for a certain time under a certain chamber pressure;

[0115] Then, the wafer 4 is lifted to a high position and the metal film surface resistance R is measured. P1 , and then get the surface resistance ratio R P1 / R0.

[0116] The chamber pressure is maintained at P2, and the above heat treatment process is repeated to obtain the surface resistance R of the metal film after different heat treatment pressures. Pn .

[0117] Further obtain the surface resistance ratio R P1 / R0,R P2 / R0,…R Pn / R0(such as Figure 8 The influence of different heat treatment conditions on the wettability of the metal film can be evaluated by the surface resistance ratio. The larger the ratio, the worse the continuity of the metal film and the worse the wettability.

[0118] When the first process parameter is the processing time, the evaluation method is similar to the above two methods and will not be described in detail here.

[0119] Traditional methods for evaluating wettability require removing the slide after a heat treatment and observing it under a microscope, which cannot achieve in-situ measurement. Furthermore, comparing multiple heat treatment processes is time-consuming and labor-intensive, resulting in low efficiency. However, the method of the embodiment allows for in-situ evaluation of the wettability of metal films, resulting in high testing efficiency. Furthermore, it can simultaneously evaluate the effects of multiple heat treatment processes on the wettability of metal films.

[0120] While various embodiments of the present invention have been described above, the above description is intended to be illustrative, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A semiconductor heat treatment process equipment, characterized in that, include: A heat treatment chamber, wherein a wafer support mechanism, a wafer lifting mechanism, and a thin film wettability detection mechanism located above the wafer support mechanism are provided in the heat treatment chamber; The wafer supporting mechanism is used to support and heat the wafer, and a metal film of a set thickness is deposited on the surface of the wafer; The wafer lifting mechanism is used to lift the wafer located on the wafer supporting mechanism to a testing position for metal film wettability testing, and to lower the wafer from the testing position to the wafer supporting mechanism for heat treatment; The film wettability detection mechanism is used to contact the metal film when the wafer rises to the detection position, detect the surface resistance of the metal film, and evaluate the wettability of the metal film according to the surface resistance value of the metal film.

2. The semiconductor heat treatment process equipment according to claim 1, characterized in that: The film wettability detection mechanism includes a measuring unit and an evaluation unit; wherein, The measuring unit is used to measure the initial sheet resistance value of the metal film of the wafer before heat treatment; and to measure the first sheet resistance value of the metal film after heat treatment is completed; The evaluation unit is used to evaluate the wettability of the metal film before heat treatment based on the initial surface resistance value, and to evaluate the wettability of the metal film after heat treatment based on the first surface resistance value; wherein the initial surface resistance value and the first surface resistance value are both negatively correlated with the wettability of the metal film.

3. The semiconductor heat treatment process equipment according to claim 2, characterized in that: The evaluation unit is further configured to evaluate a change in wettability of the metal film based on a ratio of the first sheet resistance value to the initial sheet resistance value.

4. The semiconductor heat treatment process equipment according to claim 3, characterized in that: The evaluation unit is specifically used for: Calculate the ratio of the first surface resistance value to the initial surface resistance value, and compare the ratio with the set value to determine whether the ratio is less than the set value. If so, it is determined that the wettability of the metal film meets the process requirements; otherwise, it is determined that the wettability of the metal film does not meet the process requirements.

5. The semiconductor heat treatment process equipment according to claim 2, characterized in that: The measuring unit includes a test support ring, a plurality of test cantilevers and a surface resistance measuring assembly; A plurality of the test cantilevers are arranged above the wafer support mechanism at equal intervals along the circumference of the test support ring, and the test cantilevers are extended along the radial direction of the test support ring; The test support ring is connected to the side wall of the heat treatment chamber, one end of the test cantilever is connected to the test support ring, and the other end of the test cantilever is provided with a test probe facing the wafer support mechanism, and the test probe is used to contact the surface of the metal film when the wafer rises to the detection position; The sheet resistance measuring component is electrically connected to the test probe, and is used to measure the sheet resistance value of the metal film when the test probe contacts the surface of the metal film.

6. The semiconductor heat treatment process equipment according to claim 5, characterized in that: The heat treatment chamber includes a chamber body, a chamber insulating ring located on the chamber body, and a chamber cover located on the chamber insulating ring. The inner top edge of the chamber insulating ring is provided with an annular step, the outer edge of the test support ring is placed on the annular step, the inner edge of the test support ring is provided with a laterally extending folded edge, and one end of the test cantilever is connected to the folded edge.

7. The semiconductor heat treatment process equipment according to claim 1, characterized in that: The wafer support mechanism includes a heating base disposed at the bottom of the heat treatment chamber; The wafer lifting mechanism includes an ejector pin assembly and an ejector pin lifting mechanism connected to the ejector pin assembly, and the ejector pin lifting mechanism is arranged below the heating base; The ejector pin assembly includes a plurality of longitudinally arranged ejector pins. The heating base is provided with through holes for accommodating the ejector pins. The ejector pin lifting mechanism is used to drive the ejector pin assembly to move up and down so that the wafer can move up and down.

8. A heat treatment process method, using the semiconductor heat treatment process equipment according to any one of claims 1 to 7, characterized in that: The method comprises: S11: transferring a wafer with a metal film pre-deposited on its surface to the wafer support mechanism in the heat treatment chamber; S12: Lifting the wafer to the inspection position by the wafer lifting mechanism; S13: measuring the initial surface resistance of the metal film by the film wettability detection mechanism; S14: lowering the wafer onto the wafer supporting mechanism through the wafer lifting mechanism, and performing a heat treatment under set process conditions on the wafer; S15: After the heat treatment is completed, the wafer is again lifted to the detection position by the wafer lifting mechanism, and the first surface resistance value of the metal film is measured by the film wettability detection mechanism; S16: Calculate whether the ratio of the first sheet resistance value to the initial sheet resistance value is less than a set value. If so, perform subsequent processes on the wafer that has completed the heat treatment. Otherwise, execute step S17. S17: Perform additional deposition on the metal film on the wafer, and return to step S11.

9. A method for evaluating the wettability of a metal film, using the semiconductor heat treatment process equipment according to any one of claims 1 to 7, characterized in that: The method comprises: S21: transferring a wafer with a metal film pre-deposited on its surface to the wafer support mechanism in the heat treatment chamber; S22: Lifting the wafer to the inspection position by the wafer lifting mechanism; S23: measuring the initial surface resistance of the metal film by the film wettability detection mechanism; S24: evaluating the wettability of the metal film based on the initial sheet resistance value, wherein the initial sheet resistance value is negatively correlated with the wettability of the metal film; S25: lowering the wafer onto the wafer supporting mechanism through the wafer lifting mechanism, and performing a heat treatment under set process conditions on the wafer; S26: After the heat treatment is completed, the wafer is again lifted to the detection position by the wafer lifting mechanism, and the second surface resistance value of the metal film is measured by the film wettability detection mechanism; S27: adjusting the first process parameter value in the heat treatment process conditions and keeping the other process parameter values ​​unchanged, repeating steps S25-S26 for a set number of times to obtain a plurality of second sheet resistance values ​​corresponding to different first process parameter values; S28: Based on the ratio of multiple second surface resistance values ​​to the initial surface resistance value, evaluate the influence of different first process parameter values ​​on the wettability of the metal film during the heat treatment process, wherein the larger the ratio of the second surface resistance value to the initial surface resistance value, the worse the continuity of the metal film.

10. The method for evaluating the wettability of a metal thin film according to claim 9, wherein: The first process parameter is one of the heating temperature of the wafer, the chamber pressure and the heat treatment process duration.

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