Display panel manufacturing method and display panel

Abstract

The present application discloses a display panel manufacturing method and a display panel. In the display panel manufacturing method, an auxiliary layer is added during photolithography. On the one hand, the auxiliary layer is easier to peel off than the photoresist layer, and peeling off the auxiliary layer can directly remove the photoresist layer remaining after development. This can avoid the residual photoresist layer, thereby avoiding the problem of the residual photoresist layer affecting the performance of the device. On the other hand, because the auxiliary layer is set during photolithography, when setting the subsequent photoresist layer, the photoresist layer does not need to directly contact the underlying light-emitting layer. Therefore, the display panel manufacturing method can prevent the light-emitting layer from being affected by photolithography and peeling, and can also avoid the formation of trap sites on the light-emitting layer, thereby avoiding quenching of the light-emitting layer.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel manufacturing method and a display panel. Background Art

[0002] Organic light-emitting diodes (OLEDs) offer advantages such as self-luminescence, high contrast, and low power consumption. Quantum dot light-emitting diodes (QLEDs) boast long lifespan, self-luminescence, and a wide color gamut, making them considered the next generation of flat-panel display technology. Currently, OLED and QLED display technologies are widely used in small mobile devices such as mobile phones.

[0003] Inkjet printing and photolithography technologies can each achieve high resolution and effective commercialization of full-color QLEDs. In order to achieve full-color QLED / OLED devices, there are currently two main photolithography methods for patterning the light-emitting layer. One is to chemically modify ligand quantum dots (Quantum Dot, QD) or add photosensitive additives to QD to make a QD photosensitive layer and a photopatternable layer. This method easily leads to unwanted QD residues that are difficult to completely remove during the development process, resulting in color impurities. Another method is to use photoresist (PR) and traditional photolithography technology to define sub-pixels for QD deposition. In this method, excess QDs are deposited on top of the PR and will be removed with the PR during the lift-off process.

[0004] In the process of research and practice of the prior art, the inventors of this application found that the photolithography method avoids the problem of color impurities, but may cause other problems. First, the conventional photolithography chemicals and stripping processes may contaminate, dissolve or damage pre-existing QDs, resulting in the formation of trap sites. Chemicals and stripping processes may cause the luminous intensity of the light-emitting layer in the OLED to increase, quenching the luminescence of the OLED. Second, during the PR stripping process, the PR may not be completely removed, and the PR residue will affect the performance of the device. Summary of the Invention

[0005] The present application provides a display panel manufacturing method and a display panel, which can prevent photoresist residue from affecting the performance of the display panel.

[0006] The present application provides a display panel manufacturing method, comprising:

[0007] forming an auxiliary layer on the first electrode layer;

[0008] forming a photoresist layer on a side of the auxiliary layer away from the first electrode layer;

[0009] performing patterning on the auxiliary layer and the photoresist layer to form a first through hole, wherein the first through hole penetrates the auxiliary layer and the photoresist layer;

[0010] forming a first light-emitting layer in the first through hole;

[0011] The auxiliary layer and the photoresist layer are removed to form a patterned first light-emitting layer on the first electrode layer.

[0012] Optionally, in some embodiments of the present application, after removing the auxiliary layer and the photoresist layer to form the patterned first light-emitting layer on the first electrode layer, the method further includes:

[0013] Repeat the steps of making the auxiliary layer, making the photoresist layer, patterning the auxiliary layer and the photoresist layer, and making the first light-emitting layer to form a patterned light-emitting layer with at least two light-emitting colors on the first electrode layer, and the light-emitting layers of different colors are arranged adjacent to each other and are spaced apart on the first electrode layer.

[0014] Optionally, in some embodiments of the present application, after removing the auxiliary layer and the photoresist layer to form the patterned first light-emitting layer on the first electrode layer, the method further includes:

[0015] The steps of manufacturing the auxiliary layer, manufacturing the photoresist layer, patterning the auxiliary layer and the photoresist layer, and manufacturing the first light-emitting layer are repeated to form a patterned light-emitting layer with three light-emitting colors on the first electrode layer.

[0016] Optionally, in some embodiments of the present application, after the step of removing the auxiliary layer and the photoresist layer to form the patterned first light-emitting layer on the first electrode layer, the method further includes:

[0017] forming an auxiliary layer on the patterned first light-emitting layer;

[0018] forming a photoresist layer on a side of the auxiliary layer away from the patterned first light-emitting layer;

[0019] performing patterning on the auxiliary layer and the photoresist layer to form a second through hole, wherein the second through hole penetrates the auxiliary layer and the photoresist layer, and a position of the second through hole is staggered with a position of the first through hole;

[0020] forming a second light-emitting layer in the second through hole;

[0021] removing the auxiliary layer and the photoresist layer to form a patterned second light-emitting layer, wherein the patterned second light-emitting layer is formed on the same layer as the patterned first light-emitting layer;

[0022] forming an auxiliary layer on the patterned first light-emitting layer and the patterned second light-emitting layer;

[0023] forming a photoresist layer on a side of the auxiliary layer away from the patterned first light-emitting layer and the patterned second light-emitting layer;

[0024] performing patterning on the auxiliary layer and the photoresist layer to form a third through hole, wherein the third through hole penetrates the auxiliary layer and the photoresist layer, and the position of the third through hole is staggered with the positions of the first through hole and the second through hole;

[0025] forming a third light-emitting layer in the third through hole;

[0026] removing the auxiliary layer and the photoresist layer to form the patterned third light-emitting layer, wherein the patterned third light-emitting layer is formed on the same layer as the patterned first light-emitting layer and the patterned second light-emitting layer;

[0027] The first light-emitting layer, the second light-emitting layer and the third light-emitting layer emit light of different colors.

[0028] Optionally, in some embodiments of the present application, the light-emitting layers of three light-emitting colors are respectively a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer.

[0029] Optionally, in some embodiments of the present application, the materials used for the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer are all inorganic light-emitting materials; or,

[0030] The materials used for the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer are all organic light-emitting materials; or

[0031] The materials used in the red light-emitting layer and the green light-emitting layer are organic light-emitting materials, and the material used in the blue light-emitting layer is inorganic light-emitting material.

[0032] Optionally, in some embodiments of the present application, after forming a patterned light-emitting layer having at least two luminous colors on the first electrode layer, the method further includes:

[0033] A filter layer is formed on the light-emitting layer of at least two light-emitting colors, and the filter layer is formed on the first electrode layer and covers the light-emitting layer.

[0034] Optionally, in some embodiments of the present application, a side of the auxiliary layer close to the first electrode layer has a hollow pattern.

[0035] Optionally, in some embodiments of the present application, the thickness of the auxiliary layer is 10 nm to 100 nm.

[0036] Optionally, in some embodiments of the present application, the material used for the auxiliary layer is a combination of one or more of polyvinyl pyrrolidone, carboxymethyl cellulose, methyl cellulose, polyvinyl alcohol, sodium alginate, and copovidone S-630.

[0037] Optionally, in some embodiments of the present application, the step of patterning the auxiliary layer and the photoresist layer includes:

[0038] performing an exposure process on the photoresist layer not covered by the mask;

[0039] Performing a development process on the photoresist layer to remove the portion of the photoresist layer that has been exposed to light, so as to form a first sub-through hole on the photoresist layer;

[0040] The auxiliary layer is etched to remove the portion of the auxiliary layer corresponding to the first sub-through hole to form a second sub-through hole on the auxiliary layer. The second sub-through hole is connected to the first sub-through hole to form the first through hole. The first through hole passes through the auxiliary layer and the photoresist layer.

[0041] Optionally, in some embodiments of the present application, the step of removing the auxiliary layer and the photoresist layer includes:

[0042] The auxiliary layer is ultrasonically treated in an alcohol solvent, an ester solvent or an ether solvent to remove the auxiliary layer and the photoresist layer.

[0043] Optionally, in some embodiments of the present application, before the ultrasonic treatment of the auxiliary layer in an alcohol solvent, an ester solvent or an ether solvent, the process further comprises:

[0044] The photoresist layer is removed.

[0045] Accordingly, the present application provides a display panel, which is manufactured using any of the display panel manufacturing methods described above.

[0046] The present application employs a display panel manufacturing method that adds an auxiliary layer between the first electrode layer and the photoresist layer during photolithography. On the one hand, the auxiliary layer is easier to peel off than the photoresist layer, and peeling off the auxiliary layer can directly remove the photoresist layer remaining after development on the auxiliary layer. This avoids the problem of residual photoresist layer affecting device performance. On the other hand, because the auxiliary layer is provided during photolithography, the photoresist layer does not need to directly contact the light-emitting layer when the subsequent photoresist layer is provided. This can prevent the light-emitting layer from being affected by photolithography and peeling, avoid the formation of trap sites on the light-emitting layer, and thus prevent quenching of the light-emitting layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in this application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0048] Figure 1 This is a schematic diagram of the steps of the first manufacturing method of the display panel manufacturing method provided by the present application;

[0049] Figures 2a to 2e This is a schematic diagram of the first step of the display panel manufacturing method provided by the present application;

[0050] Figure 3 This is a structural diagram of the auxiliary layer of the display panel provided by this application;

[0051] Figure 4 The display panel provided by this application Figure 3 A schematic top view corresponding to the auxiliary layer structure shown;

[0052] Figure 5 This is a schematic diagram of the steps of the second manufacturing method of the display panel manufacturing method provided by the present application;

[0053] Figures 6a to 6u This is a schematic diagram of the second step of the display panel manufacturing method provided by the present application;

[0054] Figure 7 This is a schematic diagram of the first structure of the display panel provided by this application;

[0055] Figure 8 This is a schematic diagram of the second structure of the display panel provided by this application;

[0056] Figure 9 This is a structural diagram of the array layer of the display panel provided in this application. DETAILED DESCRIPTION

[0057] The technical solutions in this application will be described clearly and completely below in conjunction with the drawings in this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain this application, and are not used to limit this application. In this application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0058] This application provides a display panel manufacturing method and a display panel. Detailed descriptions are provided below. It should be noted that the order in which the following embodiments are described does not limit the preferred order of the embodiments.

[0059] See also Figures 1 to 2e , Figure 1 This is a schematic diagram of the steps of the first manufacturing method of the display panel manufacturing method provided by this application. Figures 2a to 2e This is a schematic diagram of the first step of the display panel manufacturing method provided by this application. It specifically includes the following steps:

[0060] 101. Fabricate an auxiliary layer on the first electrode layer.

[0061] The auxiliary layer is formed on the first electrode layer by a deposition method, which includes physical vapor deposition (PVD), chemical vapor deposition (CVD), and plasma chemical vapor deposition (PCVD).

[0062] The auxiliary layer may be formed on the first electrode layer by coating, and the coating methods include spin coating (hereinafter referred to as spin coating), slit coating, electrostatic spraying and the like.

[0063] Taking spin coating as an example, specifically, the atomized auxiliary layer material is evenly sprayed on the first electrode layer, and then the first electrode layer is driven to rotate so that the auxiliary layer material on the first electrode layer forms a film layer. After the distribution of the auxiliary layer material is stabilized, the rotation of the first electrode layer is stopped to obtain the auxiliary layer. The use of the spin coating process can improve the thickness uniformity of the auxiliary layer, facilitate flexible control of the film formation state of the auxiliary layer in the process, and also facilitate control precision. Optionally, adding a spraying step before spin coating can form a thin auxiliary layer liquid film layer on the surface of the first electrode layer, improve the fluidity of the auxiliary layer material on the surface of the first electrode layer during spin coating, reduce the motor speed requirement, improve the spin coating efficiency, and improve the utilization rate of the auxiliary layer material.

[0064] Among them, the material used for the auxiliary layer is a combination of one or more of polyvinyl pyrrolidone (PVP), carboxymethyl cellulose (CMC), methyl cellulose (MC), polyvinyl alcohol (PVA), sodium alginate, and copolyvidone S-630.

[0065] The auxiliary layer material selected in this application does not chemically react with the inorganic light-emitting material used to make the light-emitting layer, and is incompatible with the organic light-emitting material. Secondly, the auxiliary layer is made of the above materials. Since the above materials have low adhesion to the light-emitting layer material, they can be easily removed under mild conditions without residue. Also due to its polarity, the auxiliary layer will not be swollen or dissolved by non-polar solvents, and can prevent chemicals from penetrating into the auxiliary layer and contacting the first electrode layer or the light-emitting layer. In addition, a photoresist layer can be well formed on the auxiliary layer made of the above materials.

[0066] 102. Fabricate a photoresist layer on a side of the auxiliary layer away from the first electrode layer.

[0067] The photoresist layer is formed on the side of the auxiliary layer away from the first electrode layer by a deposition method. The specific deposition method is as described in step 101 and will not be repeated here.

[0068] The photoresist layer may be formed on the side of the auxiliary layer away from the first electrode layer by coating, and the coating methods include spin coating, slit coating, electrostatic spraying and the like.

[0069] Specifically, a photoresist material is first applied to the side of the auxiliary layer away from the first electrode layer. The photoresist material is then planarized and thermally cured to form a photoresist layer. The coating method is process-controllable. This not only improves the thickness uniformity of the photoresist layer, facilitating flexible control of the film formation state during the manufacturing process, but also facilitates precision control. Furthermore, it can reduce production costs and improve production efficiency.

[0070] The photoresist layer is made of photoresist material. Photoresist materials can be mainly divided into two types: positive photoresist and negative photoresist, which can also be called positive photoresist and negative photoresist. Positive photoresist means that the part exposed to light can be removed by the developer, while the unexposed photoresist will not be removed by the developer. This is because the positive photoresist itself is difficult to dissolve in the developer. After exposure, it dissociates into small molecules and forms a structure that is easily soluble in the developer. The negative photoresist is the opposite. After exposure, it forms a structure that is not easily soluble in the developer. The part exposed to light will not be removed by the developer, while the remaining areas not exposed to light will be removed by the developer. Without further explanation, the present application uses positive photoresist to form the photoresist layer, but is not limited to the photoresist layer of the present application being positive photoresist.

[0071] Among them, the positive photoresist material can be naphthoquinone diazide compounds and o-quinone azide compounds, and the negative photoresist can be polycinnamate compounds and polyhydrocarbon-bisazide compounds.

[0072] The thickness of the photoresist layer is 10 nm to 100 nm, specifically, the thickness of the photoresist layer is 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm or 100 nm.

[0073] 103. Perform patterning on the auxiliary layer and the photoresist layer to form a first through hole, wherein the first through hole penetrates the auxiliary layer and the photoresist layer.

[0074] The auxiliary layer and the photoresist layer are patterned, specifically comprising the following steps:

[0075] 1031. Expose the photoresist layer not covered by the mask.

[0076] See also Figure 2a , Figure 2a Schematic diagram of the exposure process provided by the present application. The auxiliary layer 13 is provided on the first electrode layer 12, and the photoresist layer 14 is provided on the side of the auxiliary layer 13 away from the first electrode layer 12. A first mask 1 is provided on the side of the photoresist layer 14 away from the auxiliary layer 13. The photoresist layer 14 not covered by the first mask 1 is exposed to light. Figure 2a The arrows in the represent illumination.

[0077] In this embodiment, positive photoresist is used as an example for description. After exposure, the portion of the photoresist layer 14 exposed to light dissociates into small molecules, forming a structure that is easily soluble in a developer.

[0078] 1032 . Perform a development process on the photoresist layer to remove a portion of the photoresist layer that has been exposed, so as to form a first sub-through hole on the photoresist layer.

[0079] See also Figure 2b , Figure 2b 1 is a schematic diagram of the steps of the development process provided in the present application, wherein the photoresist layer 14 is developed to remove the portion of the photoresist layer 14 that has been exposed, so as to form a first sub-through hole 14 a on the photoresist layer 14 .

[0080] The development process involves dissolving the soluble areas of the photoresist caused by exposure using a chemical developer. The chemical developer can be a combination of one or more of tetramethylammonium hydroxide (TMAH), n-butyl acetate (nBA), and toluene. Other solvents that can dissolve the exposed photoresist can also be used as the developer.

[0081] 1033. Etch the auxiliary layer to remove the portion of the auxiliary layer corresponding to the first sub-through hole to form a second sub-through hole on the auxiliary layer. The second sub-through hole is connected to the first sub-through hole to form a through hole. The through hole penetrates the auxiliary layer and the photoresist layer.

[0082] The auxiliary layer may be etched by wet etching or dry etching, specifically, by chemical etching, electrolytic etching, ion beam sputtering etching, plasma etching, or reactive particle etching.

[0083] See also Figure 2c , Figure 2c : It is a schematic diagram of the steps of the etching process provided in this application. In this embodiment, the etching process adopts the method of plasma etching, and oxygen (O2) is used as the plasma as an example for illustration. Under low pressure, O2 is ionized and forms plasma under the excitation of radio frequency power. Plasma is composed of charged electrons and ions. In addition to being converted into ions under the impact of electrons, O2 can also absorb energy and form a large number of active groups. The active groups and the surface of the auxiliary layer 13 undergo a chemical reaction to form volatile reaction products. The reaction product detaches from the surface of the auxiliary layer 13 and is extracted from the cavity by the vacuum system, thereby forming a second sub-through hole 13a on the auxiliary layer 13. The second sub-through hole 13a is connected to the first sub-through hole 14a to form a first through hole 10a, and the through hole passes through the auxiliary layer 13 and the photoresist layer 14. Plasma etching technology has good anisotropy and process controllability, and the process maturity is high. Etching the auxiliary layer 13 using this method can make the process more efficient.

[0084] 104. Dispose a first light-emitting layer in the first through hole.

[0085] The first light emitting layer is disposed in the first through hole by a deposition method. The specific deposition method is as described in step 101 and will not be repeated here.

[0086] See also Figure 2d , Figure 2d Schematic diagram of the steps of providing the first light emitting layer. Specifically, the material of the first light emitting layer 151 is deposited on the entire surface of the side of the photoresist layer 14 away from the auxiliary layer 13 and inside the first through hole 10a.

[0087] 105. Remove the auxiliary layer and the photoresist layer.

[0088] See also Figure 2e , Figure 2e Schematic diagram of the steps for removing the auxiliary layer and photoresist layer. After removing the auxiliary layer 13 and the photoresist layer 14, a first light-emitting layer 151 patterned on the first electrode layer 12 is obtained. The auxiliary layer 13 and the photoresist layer 14 are removed by ultrasonically treating the auxiliary layer 13 in an alcohol, ester, or ether solvent to remove the auxiliary layer and the photoresist layer.

[0089] The ultrasonic treatment utilizes the cavitation, acceleration and straight flow effects of ultrasonic waves in the liquid to directly or indirectly act on the liquid and the auxiliary layer 13, so that the auxiliary layer 13 is dispersed, emulsified and peeled off, thereby achieving the purpose of removal.

[0090] It should be noted that ultrasonic treatment of the auxiliary layer 13 in an alcohol, ester, or ether solvent allows the alcohol, ester, or ether solvent to penetrate the interface between the auxiliary layer 13 and the first electrode layer 12 and the interface between the auxiliary layer 13 and the first light-emitting layer 151, generating bubbles, and then gradually vibrating and peeling the auxiliary layer 13. Because the solvent used in the ultrasonic treatment in this application has no solubility for the material of the first light-emitting layer 151, no bubbles are generated between the first light-emitting layer 151 and the first electrode layer 12, and the first light-emitting layer 151 is not peeled off.

[0091] Specifically, the alcohol solvent can be ethanol, butanol, amyl alcohol, ethylene glycol or propylene glycol, the ester solvent can be PGMEA or EGMEA, and the ether solvent can be methyl ether. The frequency of the ultrasonic treatment is 10 kilohertz (kHz) to 200kHz. Specifically, the frequency of the ultrasonic treatment is 10kHz, 20kHz, 30kHz, 40kHz, 50kHz, 60kHz, 70kHz, 80kHz, 90kHz, 100kHz, 110kHz, 120kHz, 130kHz, 140kHz, 150kHz, 160kHz, 170kHz, 180kHz, 190kHz or 200kHz.

[0092] In some embodiments, the photoresist layer 14 may be removed before the auxiliary layer 13 is ultrasonically treated in an alcohol solvent, an ester solvent, or an ether solvent.

[0093] The photoresist layer 14 can be removed by chemical dissolution and physical stripping. Specifically, the chemical dissolution method can be spraying propylene glycol monomethyl ether acetate (PGMEA) or ethylene glycol monomethyl ether acetate (EGMEA) solvent on the photoresist layer 14 to dissolve the photoresist layer 14. Alternatively, the remaining photoresist layer 14 can be exposed and then removed by development. The physical stripping method is to directly use mechanical force to strip the photoresist layer 14. The method of removing the photoresist layer 14 is a conventional technical means in the field and will not be described in detail here.

[0094] In some embodiments, a hollow pattern is provided on the side of the auxiliary layer 13 close to the first electrode layer 12. Figure 3 and Figure 4 , Figure 3 This is a structural diagram of the auxiliary layer of the display panel provided in this application. Figure 4 The display panel provided by this application Figure 3 The auxiliary layer 13 includes a first sub-auxiliary layer portion 13A and a second sub-auxiliary layer portion 13B. The first sub-auxiliary layer portion 13A has a hollow pattern. The grid pattern can be Figure 4 The hollowing out is formed by the hexagonal concave portion shown in the figure. The shape of the concave portion can be circular, elliptical, regular polygonal or irregular polygonal, etc.

[0095] It should be noted that the density and size of the hollow pattern can be smaller than the patterned size of the first light-emitting layer 151. This allows the auxiliary layer 13 to be laid on the first light-emitting layer 151. Because the auxiliary layer 13 is used to protect the first light-emitting layer 151 during photolithography, even if the auxiliary layer 13 cannot contact the first electrode layer 12 due to the first light-emitting layer 151 forming a protrusion on the first electrode layer 12, it can still protect the first light-emitting layer 151.

[0096] In some embodiments, the size of the recessed portion in the hollow pattern of the auxiliary layer 13 is larger than the patterned size of the first light-emitting layer 151. Specifically, the length and width of the patterned first light-emitting layer 151 are both in the range of 1 μm to 10 μm, and the depth is in the range of 10 nm to 100 nm. The length and width of the recessed portion are both in the range of 10 μm to 15 μm, and the depth is in the range of 100 nm to 200 nm. During the manufacturing process, the first light-emitting layer 151 is positioned in the recessed portion by alignment, thereby avoiding the problem of warping of the auxiliary layer 13 and making the auxiliary layer 13 fit the first electrode layer 12.

[0097] Specifically, the length and width of the patterned first light-emitting layer 151 are both in the range of 1 μm, 3 μm, 5 μm, 6 μm, 8 μm, or 10 μm, and the depth is in the range of 10 nm, 30 nm, 50 nm, 60 nm, 80 nm, or 100 nm. The length and width of the recessed portion are both in the range of 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, or 15 μm, and the depth is in the range of 100 nm, 130 nm, 150 nm, 160 nm, 180 nm, or 200 nm. The length, width, and depth of the first light-emitting layer 151 are selected within the above numerical ranges to achieve a better light-emitting effect, and the length, width, and depth of the recessed portion are selected within the above numerical ranges to accommodate the size of the first light-emitting layer 151.

[0098] Figure 3 and Figure 4The auxiliary layer 13 shown can be prepared by first depositing the auxiliary layer material on another substrate, then photolithographically etching the auxiliary layer material to form a first sub-auxiliary layer portion 13A and a second sub-auxiliary layer portion 13B, thereby obtaining an auxiliary layer 13 with a hollow pattern. The auxiliary layer 13 with a hollow pattern thus formed is an integrated structure. Only the auxiliary layer 13 needs to be photolithographically etched and then transferred to the first light-emitting layer 151. The other substrate can be made of the same material as the substrate 11.

[0099] use Figure 3 、 Figure 4 The auxiliary layer 13 structure shown can reduce the adhesion between the auxiliary layer 13 and the first electrode layer, so that the auxiliary layer 13 can be removed more cleanly in subsequent processes. Figure 3 、 Figure 4 The hollow pattern of the auxiliary layer 13 shown is only an example and is not intended to limit the present application.

[0100] It should be noted that the light-emitting layer of the present application can be provided as a patterned light-emitting layer having at least two luminescent colors. When producing a patterned light-emitting layer having two or more luminescent colors, the steps of forming the auxiliary layer 13, forming the photoresist layer 14, patterning the auxiliary layer 13 and the photoresist layer 14, and producing the first light-emitting layer 151 are repeated to form a patterned light-emitting layer having at least two luminescent colors on the first electrode layer 12. The light-emitting layers of different colors are disposed adjacent to each other and spaced apart on the first electrode layer 12.

[0101] Specifically, the colors may be 2, 3, or 4. Taking the production of a patterned light-emitting layer having three luminescent colors as an example, the steps of producing the auxiliary layer 13, producing the photoresist layer 14, patterning the auxiliary layer 13 and the photoresist layer 14, and producing the first light-emitting layer 151 are repeated to form a patterned light-emitting layer having three luminescent colors on the first electrode layer 12.

[0102] For details, please refer to Figure 5 , Figure 5 This is a schematic diagram of the second process step of the display panel manufacturing method provided by this application. Specifically, it includes the following steps:

[0103] 201. Fabricate an auxiliary layer on the first electrode layer.

[0104] 202. Fabricate a photoresist layer on a side of the auxiliary layer away from the first electrode layer.

[0105] The auxiliary layer and the photoresist layer are patterned to form a first through hole, which passes through the auxiliary layer and the photoresist layer.

[0106] 203. Fabricate a first light-emitting layer in the first through hole.

[0107] 204 . Remove the auxiliary layer and the photoresist layer to form a patterned first light-emitting layer on the first electrode layer.

[0108] 205. Fabricate an auxiliary layer on the patterned first light-emitting layer.

[0109] 206. Fabricate a photoresist layer on a side of the auxiliary layer away from the patterned first light-emitting layer.

[0110] 207 . Pattern the auxiliary layer and the photoresist layer to form a second through hole. The second through hole penetrates the auxiliary layer and the photoresist layer. The position of the second through hole is staggered with the position of the first through hole.

[0111] 208. Fabricate a second light-emitting layer in the second through hole.

[0112] 209. Remove the auxiliary layer and the photoresist layer to form a patterned second light-emitting layer. The patterned second light-emitting layer is manufactured on the same layer as the patterned first light-emitting layer.

[0113] 210. Fabricate an auxiliary layer on the patterned first light-emitting layer and the patterned second light-emitting layer.

[0114] 211. Fabricate a photoresist layer on a side of the auxiliary layer away from the patterned first light-emitting layer and the patterned second light-emitting layer.

[0115] 212. Pattern the auxiliary layer and the photoresist layer to form a third through hole. The third through hole penetrates the auxiliary layer and the photoresist layer. The position of the third through hole is staggered with the positions of the first through hole and the second through hole.

[0116] 213. Fabricate a third light-emitting layer in the third through hole.

[0117] 214. Remove the auxiliary layer and the photoresist layer to form a patterned third light-emitting layer. The patterned third light-emitting layer is manufactured on the same layer as the patterned first light-emitting layer and the patterned second light-emitting layer. The first light-emitting layer, the second light-emitting layer, and the third light-emitting layer have different light-emitting colors.

[0118] For details, please refer to Figures 6a to 6u , Figures 6a to 6u This is a schematic diagram of the second step of the display panel manufacturing method provided by this application. First, the first light-emitting layer 151 is prepared according to the above steps. After removing the auxiliary layer 13 and the photoresist layer 14, the above steps are repeated to prepare the second light-emitting layer 152 and the third light-emitting layer 153 in sequence. The first light-emitting layer 151, the second light-emitting layer 152 and the third light-emitting layer 153 are arranged on the same layer to form the light-emitting layer 15. Figure 6a 、 Figure 6h as well as Figure 6n The arrows in the represent illumination.

[0119] The following will Figures 6a to 6uThe display panel manufacturing process method provided is described in detail.

[0120] See also Figure 6a , Figure 6a Schematic diagram of the steps for exposing a photoresist layer provided in this application. An auxiliary layer 13 is disposed on a first electrode layer 12, and a photoresist layer 14 is disposed on a side of the auxiliary layer 13 away from the first electrode layer 12. A first mask 1 is disposed on a side of the photoresist layer 14 away from the auxiliary layer 13. The photoresist layer 14 not covered by the first mask 1 is exposed to light.

[0121] See also Figure 6b , Figure 6b 1 is a schematic diagram of the steps of developing the photoresist layer provided in the present application, wherein the photoresist layer 14 is developed to remove the exposed portion of the photoresist layer 14 to form a first sub-through hole 14 a on the photoresist layer 14 .

[0122] See also Figure 6c , Figure 6c This is a schematic diagram of the steps for etching the auxiliary layer provided in this application. Auxiliary layer 13 can be etched using plasma etching to form a second sub-through hole 13a in auxiliary layer 13. Second sub-through hole 13a is connected to first sub-through hole 14a to form through hole 10a, which extends through auxiliary layer 13 and photoresist layer 14.

[0123] See also Figure 6d , Figure 6d This is a schematic diagram of the steps for disposing a red light-emitting layer within a through-hole, as provided in this application. A first light-emitting layer 151 is deposited within through-hole 10a. Optionally, to facilitate the manufacturing process, first light-emitting layer 151 can be deposited entirely within through-hole 10a and on the side of photoresist layer 14 facing away from auxiliary layer 13.

[0124] See also Figure 6e , Figure 6e Schematic diagram of the steps for cleaning the auxiliary layer and the photoresist layer on the first light-emitting layer provided in the present application. After the auxiliary layer 13 and the photoresist layer 14 are removed by ultrasonic cleaning, the first light-emitting layer 151 patterned on the first electrode layer 12 is obtained.

[0125] See also Figure 6f , Figure 6f The auxiliary layer 13 is provided on the patterned first light-emitting layer 151 to cover the first light-emitting layer 151 to protect the first light-emitting layer 151 during photolithography.

[0126] like Figure 6g As shown in FIG, after the auxiliary layer 13 is provided on the first light emitting layer 151, the photoresist layer 14 is provided on the auxiliary layer 13. Figure 6h As shown, a second mask plate 2 is provided on the side of the photoresist layer 14 away from the auxiliary layer 13. The photoresist layer 14 not covered by the second mask plate 2 is exposed by light. Figure 6i As shown, the photoresist layer 14 is developed to remove the portion of the photoresist layer 14 that has been exposed, so as to form a third sub-through hole 14 b on the photoresist layer 14 .

[0127] like Figure 6j As shown, the auxiliary layer 13 is etched to remove a portion of the auxiliary layer 13, thereby forming a fourth sub-through hole 13b on the auxiliary layer 13. The fourth sub-through hole 13b is connected to the third sub-through hole 14b to form a second through hole 10b. The second through hole 10b penetrates the auxiliary layer 13 and the photoresist layer 14. It should be noted that after forming the first light-emitting layer 151, the position of the second through hole 10b formed by the photolithography and etching process does not overlap with the position of the first light-emitting layer 151. In other words, the position of the second through hole 10b is offset from the position of the first through hole 10a.

[0128] like Figure 6k As shown, a second light-emitting layer 152 is deposited within the through-hole 10a. To facilitate the manufacturing process, the second light-emitting layer 152 can be deposited entirely within the second through-hole 10b and on the side of the photoresist layer 14 away from the auxiliary layer 13. The second light-emitting layer 152 is disposed on the same layer as the first light-emitting layer 151. Similarly, after removing the auxiliary layer 13 and the photoresist layer 14 through ultrasonic cleaning, the first and second light-emitting layers 151 and 152 patterned on the first electrode layer 12 are obtained.

[0129] See also Figure 6l , Figure 6l The figure is a schematic diagram of the steps for disposing an auxiliary layer on the first and second light-emitting layers provided in the present application. An auxiliary layer 13 is disposed on the patterned first and second light-emitting layers 151 and 152. The auxiliary layer 13 covers the first and second light-emitting layers 151 and 152 to protect them during photolithography.

[0130] like Figure 6m As shown, after the auxiliary layer 13 is provided on the first light emitting layer 151 and the second light emitting layer 152, the photoresist layer 14 is provided on the auxiliary layer 13. Figure 6n As shown, a third mask plate 3 is provided on the side of the photoresist layer 14 away from the auxiliary layer 13. The photoresist layer 14 not covered by the third mask plate 3 is exposed by light. Figure 6o As shown, the photoresist layer 14 is developed to remove the portion of the photoresist layer 14 that has been exposed, so as to form a fifth sub-through hole 14 c on the photoresist layer 14 .

[0131] like Figure 6pAs shown, the auxiliary layer 13 is etched to remove the portion of the auxiliary layer 13 corresponding to the fifth sub-through hole 14c, thereby forming a sixth sub-through hole 13c on the auxiliary layer 13. The sixth sub-through hole 13c is connected to the fifth sub-through hole 14c to form a third through hole 10c. The third through hole 10c penetrates the auxiliary layer 13 and the photoresist layer 14. It should be noted that after forming the first light-emitting layer 151 and the second light-emitting layer 152, the position of the third through hole 10c formed by the photolithography and etching process does not overlap with the positions of the first light-emitting layer 151 and the second light-emitting layer 152. In other words, the position of the third through hole 10c is offset from the positions of the first through hole 10a and the second through hole 10b.

[0132] like Figure 6q As shown, a third light emitting layer 153 is provided in the third through hole 10c by a deposition method. Optionally, to facilitate the process, the third light emitting layer 153 can be deposited in the third through hole 10c and on the entire surface of the side of the photoresist layer 14 away from the auxiliary layer 13. Figure 6r As shown, after the auxiliary layer 13 and the photoresist layer 14 are removed by ultrasonic cleaning, the first light-emitting layer 151, the second light-emitting layer 152 and the third light-emitting layer 153 patterned on the first electrode layer 12 are obtained. The third light-emitting layer 153 is provided on the same layer as the second light-emitting layer 152 and the first light-emitting layer 151.

[0133] It should be noted that the order and arrangement of the first, second, and third light-emitting layers 151, 152, and 153 in this application are merely examples. In practice, the order and arrangement of the light-emitting layers of different colors can be selected as needed, and this application does not limit this. In some embodiments, the first light-emitting layer 151 is a red light-emitting layer, the second light-emitting layer 152 is a green light-emitting layer, and the third light-emitting layer 153 is a blue light-emitting layer.

[0134] The light emitting layers 15 of different colors are arranged adjacently and spaced apart. Taking light emitting layers of three different colors as an example, the light emitting layers of three different colors are arranged adjacently to form a pixel unit, and a plurality of pixel units form a display panel.

[0135] The auxiliary layer 13 has a thickness of 10 nm to 100 nm. Specifically, the auxiliary layer 13 has a thickness of 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, or 100 nm. The thickness of the auxiliary layer 13 is based on the thickness of the light-emitting layer 15 and can be set as needed.

[0136] In some embodiments, see Figure 6s , Figure 6sAfter forming the third light-emitting layer 153 and removing the auxiliary layer 13 and the photoresist layer 14 , the second electrode layer 16 is further provided on the side of the light-emitting layer 15 away from the first electrode layer 12 .

[0137] Specifically, the second electrode layer 16 can be formed on the side of the light-emitting layer 15 away from the first electrode layer 12 by evaporation. The material for the second electrode layer 16 is evaporated or sublimated into gaseous particles, which are then transported to the side of the light-emitting layer 15 away from the first electrode layer 12. The gaseous particles attach to the surface of the light-emitting layer 15 away from the first electrode layer 12, nucleate, and grow into a solid film. The atoms in the solid film then reconstruct or chemically bond to form the second electrode layer 16. Evaporation offers a simple film-forming method and high film purity and density.

[0138] Optional, see Figure 6t and Figure 6u , Figure 6t This is a schematic diagram of the steps for setting the filter layer provided in this application. Figure 6u This is a schematic diagram of the steps for disposing a second electrode layer on the filter layer, as provided in this application. A filter layer 17 is disposed on the side of the light-emitting layer 15 away from the first electrode layer 12, and a second electrode layer 16 is disposed between the filter layer 17 and the side of the light-emitting layer 15 away from the first electrode layer 12. The provision of filter layer 17 prevents color mixing among the first light-emitting layer 151, the second light-emitting layer 152, and the third light-emitting layer 153 in the light-emitting layer 15, thereby improving the display quality and extending the service life of the display panel 10.

[0139] The display panel manufacturing method provided in the present application adds an auxiliary layer 13 between the first electrode layer 12 and the photoresist layer 14 during photolithography. On the one hand, due to the material properties, the auxiliary layer 13 is easier to peel off than the photoresist layer 14. In addition, peeling off the auxiliary layer 13 can directly remove the photoresist layer 14 remaining after development on the auxiliary layer 13, thereby avoiding the problem of the residual photoresist layer 14 affecting the performance of the device. On the other hand, when the auxiliary layer 13 is set during photolithography, when the photoresist layer 14 is set after the light-emitting layer 15, the photoresist layer 14 does not need to directly contact the light-emitting layer 15. This can prevent the light-emitting layer 15 from being affected by photolithography and peeling, avoid the formation of trap sites on the light-emitting layer 15, and further avoid quenching of the light-emitting layer 15.

[0140] This application provides a display panel. Figure 7 , Figure 7 1 is a schematic diagram of the first structure of a display panel provided in this application. The display panel 10 includes a first electrode layer 12 and a light-emitting layer 15. The light-emitting layer 15 is disposed on the first electrode layer 12. The display panel 10 is manufactured using the display panel manufacturing method described above.

[0141] The light-emitting layer 15 further includes a first light-emitting layer 151, a second light-emitting layer 152, and a third light-emitting layer 153. In some embodiments, the first light-emitting layer 151 is a red light-emitting layer, the second light-emitting layer 152 is a green light-emitting layer, and the third light-emitting layer 153 is a blue light-emitting layer.

[0142] In some embodiments, the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer are made of the same material, and the light-emitting layer 15 is made of an inorganic light-emitting material or an organic light-emitting material.

[0143] In some embodiments, the red and green light-emitting layers are made of organic light-emitting materials, and the blue light-emitting layer is made of inorganic light-emitting materials. This can solve the problem of short life of blue organic light-emitting materials and extend the life of the display panel.

[0144] See also Figure 8 , Figure 8 : is a schematic diagram of the second structure of the display panel provided by the present application. In some embodiments, the display panel 10 further includes a filter layer 17. The filter layer 17 is arranged on the side of the first light-emitting layer 151, the second light-emitting layer 152 and the third light-emitting layer 153 away from the first electrode layer 12. Since the present application adopts a deposition method to produce the first light-emitting layer 151, the second light-emitting layer 152 and the third light-emitting layer 153, there is no pixel definition layer to separate the first light-emitting layer 151, the second light-emitting layer 152 and the third light-emitting layer 153. The provision of the filter layer 17 can avoid color mixing of the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer in the light-emitting layer 15, thereby improving the display effect and increasing the service life of the display panel 10. In addition, the filter layer 17 can also improve the light utilization rate of the first light-emitting layer 151, the second light-emitting layer 152 and the third light-emitting layer 153.

[0145] The filter layer 17 can be made of a color filter. The color filter selectively transmits light of corresponding wavelengths on the corresponding luminescent layer to prevent color mixing.

[0146] in, Figure 7 and Figure 8 The display panel 10 shown is only a partial structure. The display panel 10 may also include other devices. For example, the display panel 10 may also include a substrate 11. The substrate 11 refers to a base member for supporting the first electrode layer 12, the light-emitting layer 15, and the second electrode layer 16.

[0147] The substrate 11 is glass, sapphire, quartz, silicon, functional glass (sensor glass) or a flexible substrate. The functional glass is obtained by sputtering a transparent metal oxide conductive film coating on ultra-thin glass and undergoing high-temperature annealing. The material of the transparent metal oxide can be any one of indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium gallium zinc tin oxide (IGZTO), indium tin oxide (ITO), indium zinc oxide (IZO), indium aluminum zinc oxide (IAZO), indium gallium tin oxide (IGTO) or antimony tin oxide (ATO). The material used for the flexible substrate is a polymer material, specifically, the material used for the flexible substrate can be polyimide (PI), polyethylene (PE), polypropylene (PP), polystyrene (PS), polyethylene glycol terephthalate (PET) or polyethylene naphthalate diformic acid glycol ester (PEN). Polymer materials are flexible, lightweight, and impact-resistant, making them suitable for flexible display panels. Polyimide also offers excellent heat resistance and stability.

[0148] The thickness of the substrate 11 is 500 μm to 2000 μm, specifically, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm, 1500 μm, 1600 μm, 1700 μm, 1800 μm, 1900 μm or 2000 μm.

[0149] Among them, see Figure 9 , Figure 9: This is a structural schematic diagram of the array layer of the display panel provided in the present application. An array layer 18 is also included between the substrate 11 and the first electrode layer 12. The array layer 18 specifically includes a light shielding layer 181 disposed on the substrate 11, a buffer layer 182 disposed on the substrate 11 and covering the light shielding layer 181, an active layer 183, a gate insulating layer 184, and a gate layer 185 stacked sequentially on the buffer layer 182 from bottom to top, and an interlayer dielectric layer 186 covering the gate layer 185. A source electrode 187 and a drain electrode 188 are located on the interlayer dielectric layer 186, and the source electrode 187 and the drain electrode 188 are connected to the active layer 183. The source electrode 187 and the drain electrode 188 are also covered with a planarization layer 189. The first electrode layer 12 is connected to the source electrode 187 or the drain electrode 188 through the planarization layer 189. Other structures may also be included between the substrate 11 and the first electrode layer 12, and the source electrode 187 and the drain electrode 188 may be interchangeable. The structure and specific configuration of the array layer 18 are commonly used technical means in this field and will not be described in detail here.

[0150] It should be noted that the present application does not limit the structure of the thin film transistor formed in the array layer 18. The thin film transistor may be a top-gate thin film transistor, a bottom-gate thin film transistor, a dual-gate thin film transistor, or a single-gate thin film transistor. The specific structure of the thin film transistor is not further described in this application.

[0151] In the embodiment of the present application, the first electrode layer 12 serves as an anode and the second electrode layer 16 serves as a cathode. The first electrode layer 12 and the second electrode layer 16 provide current for the light emitting layer 15 to emit light under the control of the thin film transistor in the array layer.

[0152] The first electrode layer 12 is made of one or more of gold (Au), platinum (Pt), silicon (Si), indium gallium zinc oxide, indium zinc tin oxide, indium gallium zinc tin oxide, indium tin oxide, indium zinc oxide, indium aluminum zinc oxide, indium gallium tin oxide, or antimony tin oxide. The thickness of the first electrode layer 12 is 10 nm to 1000 nm. Specifically, the thickness of the first electrode layer 12 is 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1000 nm.

[0153] The materials used for the first light-emitting layer 151 , the second light-emitting layer 152 and the third light-emitting layer 153 include inorganic light-emitting materials for setting quantum dot light-emitting layers and organic light-emitting materials for setting organic electroluminescent layers.

[0154] Specifically, the inorganic luminescent material is selected from one or more of Group IV semiconductor nanocrystals, Group II-V semiconductor nanocrystals, Group II-VI semiconductor nanocrystals, Group IV-VI semiconductor nanocrystals, Group III-V semiconductor nanocrystals, and Group III-VI semiconductor nanocrystals. By way of example, the inorganic luminescent material may be a combination of one or more of silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, indium arsenide quantum dots, and gallium nitride quantum dots.

[0155] Furthermore, when using inorganic luminescent materials to form the quantum dot light-emitting layer, organic ligands can be bound to the quantum dot surface. Organic ligands include, but are not limited to, one of mercaptoacetic acid, mercaptopropionic acid, mercaptobutyric acid, mercaptooleic acid, mercaptoglycerol, mercaptoethylamine, mercaptooleylamine, and glutathione. These organic ligands, when coordinated with the surface atoms of the quantum dots, modify the quantum dot surface with thiol groups. The positively charged amino groups at one end of the diamine compound's molecular chain added during quantum dot synthesis can generate electrostatic forces with the negatively charged thiol groups on the quantum dot surface, enabling electrostatic self-assembly. This improves the film quality of the quantum dots, reduces surface defects at the film interface, and thus enhances the performance and stability of the quantum dot unit. The organic ligands protect the core region of the quantum dots, strengthening their core and improving their wettability and solubility. Furthermore, the organic ligands prevent water and oxygen from corroding the quantum dots. This improves the film quality of the quantum dots, reduces surface defects at the film interface, and thus enhances the performance and stability of the quantum dot unit. The solvent for synthesizing the ligand-bound quantum dots can be n-octane.

[0156] The color of the quantum dot light-emitting layer is determined by the size of the quantum dots. Specifically, when the quantum dots are 5nm to 6nm in size, they emit red light; when the quantum dots are 3nm to 4nm in size, they emit green light; and when the quantum dots are 2nm to 3nm in size, they emit blue light.

[0157] Specifically, among the organic light-emitting materials, the red light-emitting layer material may be a rhodamine dye, the green light-emitting layer material may be a coumarin dye, and the blue light-emitting layer material may be a benzimidazole compound.

[0158] Furthermore, when an organic light-emitting material is used to set up an organic electroluminescent layer, a complex light-emitting material can be added. Specifically, the complex light-emitting material includes beryllium ions (Be 2+ ), zinc ions (Zn 2+ ), aluminum ions (Al 3+ ), calcium ions (Ca 2+ ), indium ions (In 3+ ) or terbium ions (Tb 3+ ). All of the above complexes are incompatible with the solvent used in the ultrasonic treatment.

[0159] The second electrode layer 16 is made of one or more of gold, silicon, tungsten (W), molybdenum (Mo), iron (Fe), aluminum (Al), silver (Ag), indium gallium zinc oxide, indium zinc tin oxide, indium gallium zinc tin oxide, indium tin oxide, indium zinc oxide, indium aluminum zinc oxide, indium gallium tin oxide, or antimony tin oxide. The thickness of the second electrode layer 16 is 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1000 nm.

[0160] The display panel 10 provided in the present application includes a first electrode layer 12 and a first light-emitting layer 151. The display panel 10 is manufactured using the display panel manufacturing method described above. That is, an auxiliary layer is added between the first electrode layer 12 and the photoresist layer during photolithography. On the one hand, the auxiliary layer is easier to peel off than the photoresist layer, and peeling off the auxiliary layer can directly remove the photoresist layer remaining after development on the auxiliary layer. This avoids the problem of residual photoresist layer affecting device performance. On the other hand, since the auxiliary layer is provided during photolithography, when the subsequent photoresist layer is provided, the photoresist layer does not need to directly contact the first light-emitting layer 151, the second light-emitting layer 152, and the third light-emitting layer 153. This can prevent the first light-emitting layer 151, the second light-emitting layer 152, and the third light-emitting layer 153 from being affected during photolithography and peeling, avoid the formation of trap sites on the first light-emitting layer 151, the second light-emitting layer 152, and the third light-emitting layer 153, and thus avoid quenching of the first light-emitting layer 151, the second light-emitting layer 152, and the third light-emitting layer 153.

[0161] This application provides three specific implementation methods of display panel manufacturing methods. The specific implementation methods of the display panel manufacturing methods are introduced in detail below.

[0162] Example 1

[0163] First, a first electrode layer with a thickness of 100 nm is deposited on a substrate with a thickness of 500 μm. The material used for the first electrode layer is ITO.

[0164] Then, an auxiliary layer with a thickness of 10 nm is spin-coated on the ITO. The material used for the auxiliary layer is polyvinyl pyrrolidone. After the auxiliary layer is set, a photoresist layer with a thickness of 10 nm is spin-coated on the auxiliary layer. The material used for the photoresist layer is positive photoresist. A photolithography machine equipped with a mask is used to perform patterned exposure on the photoresist layer, and the photoresist layer is developed to remove the photoresist layer in the exposed portion, thereby forming a first sub-through hole on the photoresist layer. Then, plasma etching is performed to etch the auxiliary layer at the corresponding position of the photoresist layer in the exposed portion, thereby forming a second sub-through hole on the auxiliary layer. The first sub-through hole and the second sub-through hole are connected to form a through hole. The gas used for plasma etching is O2, the ion source power is 1500 watts (W), the RF source power is 300 W, and the etching temperature is 50°C.

[0165] A 20nm thick red light-emitting layer was spin-coated in the through-hole and on the remaining photoresist layer. The material used for the red light-emitting layer was quantum dots. Specifically, the quantum dots were ZnCdSeS, the ligands of the quantum dots were thiols, and the size of the red quantum dots was 5nm.

[0166] The panel was cleaned using an ultrasonic cleaning device with ethanol as the solvent to remove the auxiliary layer and the photoresist layer remaining on the auxiliary layer. The ultrasonic frequency was set to 50 kHz.

[0167] Repeat the above steps to prepare a green and blue luminescent layer. Both layers are made of quantum dots. The blue quantum dots are 2 nm in size, and the green quantum dots are 3 nm in size. The red, green, and blue luminescent layers are layered together to form the luminescent layer. Silver is then evaporated to a thickness of 100 nm on the luminescent layer to serve as the second electrode layer.

[0168] A full-color QLED display panel can be obtained by manufacturing a display panel using the method of Example 1.

[0169] Example 2

[0170] First, a first electrode layer with a thickness of 100 nm is deposited on a substrate with a thickness of 500 μm. The material used for the first electrode layer is ITO.

[0171] Then, an auxiliary layer with a thickness of 50nm is spin-coated on the ITO. The material used for the auxiliary layer is polyvinyl pyrrolidone. After the auxiliary layer is set, a photoresist layer with a thickness of 10nm is spin-coated on the auxiliary layer. The material used for the photoresist layer is positive photoresist. A photolithography machine equipped with a mask is used to perform patterned exposure on the photoresist layer, and the photoresist layer is developed to remove the exposed portion of the photoresist layer, forming a first sub-through hole on the photoresist layer. Then, through plasma bombardment, the auxiliary layer at the corresponding position of the exposed portion of the photoresist layer is etched to form a second sub-through hole on the auxiliary layer. The first sub-through hole and the second sub-through hole are connected to form a through hole. The gas used for plasma etching is O2, the ion source power is 1500w, the RF source power is 300w, and the etching temperature is 50°C.

[0172] A red light-emitting layer with a thickness of 20 nm is evaporated in the through hole and on the remaining photoresist layer. The material used for the red light-emitting layer is an organic light-emitting material, specifically, rhodamine dye.

[0173] The panel was cleaned using an ultrasonic cleaning device with ethanol as the solvent to remove the auxiliary layer and the photoresist layer remaining on the auxiliary layer. The ultrasonic frequency was set to 50 kHz.

[0174] Repeat the above steps to prepare a green light-emitting layer and a blue light-emitting layer. The materials used for the green and blue light-emitting layers are both organic light-emitting materials. The material used for the green light-emitting layer is tris[4-(2-thienyl)phenyl]amine; tris[4-(2-thienyl)phenyl]amine (TTPA), and the material used for the blue light-emitting layer is 3', 3", 5", 5" tetrabromophenolphthalein ethyl ester (TBPe). The red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer are arranged in the same layer to form a light-emitting layer. Then, a magnesium-silver alloy with a thickness of 110nm is evaporated on the light-emitting layer as the second electrode layer. The ratio of the magnesium-silver alloy is magnesium:silver = 10:1.

[0175] A full-color OLED display panel can be obtained by manufacturing the display panel using the method of the second embodiment.

[0176] Example 3

[0177] First, a first electrode layer with a thickness of 100 nm is deposited on a substrate with a thickness of 500 μm. The material used for the first electrode layer is ITO.

[0178] Then, an auxiliary layer with a thickness of 10 nm is spin-coated on the ITO. The material used for the auxiliary layer is polyvinyl pyrrolidone. After the auxiliary layer is set, a photoresist layer with a thickness of 10 nm is spin-coated on the auxiliary layer. The material used for the photoresist layer is positive photoresist. A photolithography machine equipped with a mask is used to perform patterned exposure on the photoresist layer, and the photoresist layer is developed to remove the exposed portion of the photoresist layer, forming a first sub-through hole on the photoresist layer. Then, through plasma bombardment, the auxiliary layer at the corresponding position of the exposed portion of the photoresist layer is etched to form a second sub-through hole on the auxiliary layer. The first sub-through hole and the second sub-through hole are connected to form a through hole. The gas used for plasma etching is O2, the ion source power is 1500W, the RF source power is 300W, and the etching temperature is 50°C.

[0179] A 20nm thick blue light-emitting layer is deposited in the through-holes and on the remaining photoresist layer. The blue light-emitting layer is made of an organic light-emitting material. Specifically, the blue light-emitting layer is made of bis(2-methyl-8-hydroxyquinoline-nitrogen-1,8-oxygen)-(1,1'-biphenyl-oxygen-4)-aluminum salt (BAlq).

[0180] The panel was cleaned using an ultrasonic cleaning device with ethanol as the solvent to remove the auxiliary layer and the photoresist layer remaining on the auxiliary layer. The ultrasonic frequency was set to 50 kHz.

[0181] Repeat the above steps to prepare a green and red light-emitting layer. Both layers are made of quantum dot materials, specifically ZnCdSeS, with thiol ligands. The red, green, and blue light-emitting layers are layered together to form a light-emitting layer. A 110nm thick magnesium-silver alloy is then evaporated on the light-emitting layer to serve as the second electrode layer. The ratio of magnesium to silver is 10:1.

[0182] In this embodiment, quantum dot materials are used to make the blue light-emitting layer, and green and red light-emitting layers made of mixed organic materials are used to make the light-emitting layer of the display panel. This can solve the problem of the short life of the blue organic light-emitting material and extend the life of the display panel.

[0183] The above is a detailed introduction to a display panel manufacturing method and a display panel provided by the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel manufacturing method, characterized in that: include: forming an auxiliary layer on the first electrode layer; forming a photoresist layer on a side of the auxiliary layer away from the first electrode layer; performing patterning on the auxiliary layer and the photoresist layer to form a first through hole, wherein the first through hole penetrates the auxiliary layer and the photoresist layer; forming a light-emitting layer in the first through hole; removing the auxiliary layer and the photoresist layer to form the patterned light-emitting layer on the first electrode layer; Repeating the steps of forming the auxiliary layer, forming the photoresist layer, patterning the auxiliary layer and the photoresist layer, and forming the light-emitting layer to form patterned light-emitting layers of at least two luminous colors on the first electrode layer, wherein the light-emitting layers of different colors are adjacently disposed and spaced apart on the first electrode layer; The preparation of the auxiliary layer used in repeatedly manufacturing the auxiliary layer includes: first depositing the auxiliary layer material on another substrate, and then performing photolithography on the auxiliary layer material to form a first sub-auxiliary layer portion and a second sub-auxiliary layer portion to obtain the auxiliary layer, wherein the first sub-auxiliary layer portion has a hollow pattern, and the size of the recessed portion of the hollow pattern is larger than the patterned size of the manufactured light-emitting layer; After obtaining the auxiliary layer, the method further includes: transferring the auxiliary layer onto the prepared light-emitting layer, making the first sub-auxiliary layer close to the first electrode, and accommodating the prepared light-emitting layer in the concave portion of the hollow pattern.

2. The display panel manufacturing method according to claim 1, wherein: After removing the auxiliary layer and the photoresist layer to form the patterned light-emitting layer on the first electrode layer, the method further includes: The steps of manufacturing the auxiliary layer, manufacturing the photoresist layer, patterning the auxiliary layer and the photoresist layer, and manufacturing the light-emitting layer are repeated to form the patterned light-emitting layer with three light-emitting colors on the first electrode layer.

3. The display panel manufacturing method according to claim 2, wherein: The light-emitting layers of three light-emitting colors are respectively a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer.

4. The display panel manufacturing method according to claim 3, wherein: The materials used in the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer are all inorganic light-emitting materials; or The materials used for the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer are all organic light-emitting materials; or The materials used in the red light-emitting layer and the green light-emitting layer are organic light-emitting materials, and the material used in the blue light-emitting layer is inorganic light-emitting material.

5. The display panel manufacturing method according to claim 1, wherein: After forming a patterned light-emitting layer having at least two luminous colors on the first electrode layer, the method further includes: A filter layer is formed on the light-emitting layer of at least two light-emitting colors, and the filter layer is formed on the first electrode layer and covers the light-emitting layer.

6. The display panel manufacturing method according to claim 1, wherein: The auxiliary layer has a thickness of 10 nm to 100 nm.

7. The display panel manufacturing method according to claim 1, wherein: The auxiliary layer is made of a material selected from the group consisting of polyvinyl pyrrolidone, carboxymethyl cellulose, methyl cellulose, polyvinyl alcohol, sodium alginate, and copovidone S-630.

8. The display panel manufacturing method according to claim 1, wherein: The step of patterning the auxiliary layer and the photoresist layer comprises: performing an exposure process on the photoresist layer not covered by the mask; Performing a development process on the photoresist layer to remove the portion of the photoresist layer that has been exposed to light, so as to form a first sub-through hole on the photoresist layer; The auxiliary layer is etched to remove the portion of the auxiliary layer corresponding to the first sub-through hole to form a second sub-through hole on the auxiliary layer. The second sub-through hole is connected to the first sub-through hole to form the first through hole. The first through hole passes through the auxiliary layer and the photoresist layer.

9. The display panel manufacturing method according to claim 1, wherein: The step of removing the auxiliary layer and the photoresist layer includes: The auxiliary layer is ultrasonically treated in an alcohol solvent, an ester solvent or an ether solvent to remove the auxiliary layer and the photoresist layer.

10. The display panel manufacturing method according to claim 9, wherein: Before the auxiliary layer is subjected to ultrasonic treatment in an alcohol solvent, an ester solvent or an ether solvent, the method further comprises: The photoresist layer is removed.

11. A display panel, characterized in that: The display panel is manufactured using the display panel manufacturing method according to any one of claims 1 to 10.

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