A fast self-destructing module for transient electronics

Abstract

The invention discloses a fast self-destruction module for transient electronics, belonging to the technical field of transient electronics. A water storage chamber, an electrolytic water chamber, a powder chamber, a corrosive liquid outlet, an electrode and a power supply are arranged in the module. The water storage chamber is used to contain an aqueous solution, the electrolytic water chamber is used to contain electrolytic water, and a gas channel is arranged between the two chambers. The powder chamber is used to contain acid and alkali powders, which can form a corrosive solution when mixed with the aqueous solution. An insulating film is arranged between the powder chamber and the water storage chamber, and the insulating film can be broken by gas. The corrosive liquid outlet is connected with the powder chamber and faces the chip surface. The electrode is connected with the electrolytic water chamber. After the power supply controls the electrode to be energized, hydrogen and oxygen are generated by electrolytic water, and the gas enters the water storage chamber through the gas channel between the electrolytic water chamber and the water storage chamber. The gas pressure in the water storage chamber increases to squeeze and break the insulating film, and the aqueous solution flows into the powder chamber and dissolves the acid and alkali powders to form a corrosive solution, which flows to the chip surface through the corrosive liquid outlet to achieve corrosion and destruction.

Description

Technical Field

[0001] The invention belongs to the technical field of transient electronics, and in particular relates to a fast self-destruction module for transient electronics. Background Art

[0002] Transient electronics is a technology that can solve the environmental problems of digital products. When products using this technology are scrapped, the relevant devices can be activated to decompose naturally and even be absorbed by the human body. This technology has been extended to the medical field and is used for high-temperature disinfection of wounds to avoid bacterial infection.

[0003] At present, the degradation mechanism of most transient devices is overall degradation. This degradation process often causes the device to lose its function before it is completely degraded. In addition, the transient device mechanism currently studied is difficult to be compatible with metal oxide semiconductor (CMOS) chips and their processing technology, and it is difficult to meet the transient self-destruction needs in the fields of information security, special intelligence, etc. that use a large number of CMOS chips. For this reason, we designed a fast self-destruction module for transient electronics. Summary of the invention

[0004] Technical issues to be solved:

[0005] In order to avoid the shortcomings of the prior art, the present invention provides a fast self-destruction module for transient electronics. Through the cooperation between electrodes, water electrolysis chamber, water storage chamber and isolation membrane, under the action of electrodes, the gas generated breaks the isolation membrane, and the corrosive liquid corrodes the silicon wafer.

[0006] The technical solution of the present invention is: a fast self-destruction module for transient electronics, wherein a water storage chamber, an electrolytic water chamber, a powder chamber, a corrosive liquid outlet, electrodes and a power supply are arranged in the module;

[0007] The water storage chamber is used to hold aqueous solution, and the electrolytic water chamber is used to hold electrolytic water, and a gas channel is provided between the two chambers;

[0008] The powder chamber is used to contain acid and alkali powders, which can form a corrosive solution when mixed with an aqueous solution; an isolation membrane is provided between the powder chamber and the water storage chamber, and the isolation membrane can be broken by gas;

[0009] The etching liquid outlet is connected to the powder cavity and faces the chip surface;

[0010] The electrode is connected to the water electrolysis chamber; after the power source controls the electrode to be energized, water is electrolyzed to generate hydrogen and oxygen, and the gas enters the water storage chamber through the gas channel between the water electrolysis chamber and the water storage chamber. The gas pressure in the water storage chamber increases to squeeze the isolation membrane, and the aqueous solution flows into the powder chamber and dissolves the acid and alkali powders to form a corrosive solution, which flows from the corrosive solution outlet to the chip surface to achieve corrosion destruction.

[0011] A further technical solution of the present invention is: the module comprises an upper plate, a middle plate and a lower plate arranged in sequence from top to bottom;

[0012] A water storage cavity and a gas channel are provided inside the upper plate; the bottom opening of the water storage cavity is closed by an insulating film; the inlet of the gas channel is an air hole opened on the lower surface of the upper plate, and its outlet is connected to the water storage cavity;

[0013] The middle plate is provided with an electrolytic water chamber, a transition chamber, a powder chamber and an outlet for the corrosive liquid; the electrolytic water chamber is connected with the pores of the upper plate; the transition chamber is opposite to the water storage chamber and is separated into an independent chamber by an insulating film; the inlet of the powder chamber is connected with the transition chamber through a groove, and its outlet is connected with the outlet for the corrosive liquid through a through groove;

[0014] The lower plate is provided with electrodes and a power supply, and the electrodes are opposite to the water electrolysis chamber; the power supply is connected to the electrodes through wires.

[0015] A further technical solution of the present invention is: the number of the water storage chamber, the electrolytic water chamber, the transition chamber, the powder chamber, the corrosive liquid outlet, and the electrodes are all three, which are arranged at equal intervals to form three groups of corrosion destruction systems.

[0016] A further technical solution of the present invention is: the water storage cavity is located in the middle of the upper plate; the air hole is located on the left side of the upper plate and is connected to the electrolytic water cavity located on the left side of the middle plate.

[0017] A further technical solution of the present invention is that the transition cavity is arranged in the middle of the middle plate, adjacent to the powder cavity.

[0018] A further technical solution of the present invention is that the powder chamber is in a quadrilateral structure, is located inside the middle plate, and is located between the transition chamber and the etching liquid outlet.

[0019] A further technical solution of the present invention is that the through groove is located on the right side of the middle plate, one end of the through groove is connected to the inside of the powder chamber, and the other end is connected to the outlet of the etching liquid.

[0020] A further technical solution of the present invention is that the electric wires and the power supply are both embedded inside the lower plate.

[0021] A further technical solution of the present invention is: a positioning hole is opened at the edge of the upper plate, and a positioning column is provided at the relative position between the upper surface of the middle plate and the positioning hole, and the fitting installation of the lower surface of the upper plate and the upper surface of the middle plate is achieved by inserting the positioning column into the positioning hole.

[0022] A further technical solution of the present invention is that: the number of the positioning posts and the number of the positioning holes are both four and are evenly distributed along the circumferential direction; the diameter of the positioning posts is matched to the inner diameter of the positioning holes.

[0023] Beneficial Effects

[0024] The beneficial effect of the present invention is that: through the cooperation between the electrode, the water electrolysis chamber, the water storage chamber and the isolation membrane, the water in the water electrolysis chamber can be decomposed into oxygen and hydrogen under the action of the electrode, and then as the gas increases, the isolation membrane can be damaged, and then the aqueous solution can enter the interior of the powder chamber to generate corrosive liquid, thereby achieving corrosion of the silicon wafer, solving the problem that the currently studied transient device mechanism is difficult to be compatible with the metal oxide semiconductor (CMOS) chip and its processing technology, and it is difficult to meet the transient self-destruction requirements in the fields of information security, special intelligence, etc. that use a large number of CMOS chips.

[0025] Preferably, the present invention adopts a three-layer plate structure, and each cavity is respectively arranged on a different layer plate, which firstly reduces the processing difficulty; secondly, the cavities are independent of each other, which enhances the stability of use and will not cause damage to the chip due to self-starting or damage during transportation or without startup due to processing errors; thirdly, the layer plate structure occupies a small space and does not affect the chip installation space.

[0026] Preferably, the three-group corrosion destruction system can quickly and fully destroy the chip.

[0027] Preferably, the powder chamber is a quadrilateral structure, which enables the aqueous solution to be fully mixed with the powder therein to achieve complete dissolution. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the explosion structure of the present invention;

[0029] Figure 2 It is a schematic diagram of the internal structure of the lower layer of the present invention;

[0030] Figure 3 This is a schematic diagram of the internal structure of the middle layer of the present invention;

[0031] Figure 4 It is a schematic diagram of the internal structure of the upper layer of the present invention;

[0032] Figure 5 It is a schematic diagram of the cross-sectional structure of the upper layer of the present invention.

[0033] Explanation of the accompanying drawings: 1-upper plate; 2-middle plate; 3-lower plate; 4-water storage chamber; 5-pores; 6-isolating membrane; 7-electrolytic water chamber; 8-transition chamber; 9-powder chamber; 10-groove; 11-corrosive liquid outlet; 12-through groove; 13-electrode; 14-wire; 15-power supply; 16-positioning hole; 17-positioning column. DETAILED DESCRIPTION

[0034] The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, but should not be construed as limiting the present invention.

[0035] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0036] The present invention discloses a fast self-destructing module for transient electronics, wherein a water storage chamber 4, an electrolytic water chamber 7, a powder chamber 9, a corrosive liquid outlet 11, an electrode 13 and a power supply 15 are arranged in the module;

[0037] The water storage chamber 4 is used to contain aqueous solution, and the electrolytic water chamber 7 is used to contain electrolytic water, and a gas channel is provided between the two chambers;

[0038] The powder chamber 9 is used to contain acid and alkali powders, which can form a corrosive solution when mixed with an aqueous solution; an isolation membrane 6 is provided between the powder chamber 9 and the water storage chamber 4, and the isolation membrane 6 can be broken by gas;

[0039] The etching liquid outlet 11 is connected to the powder chamber 9 and faces the chip surface;

[0040] The electrode 13 is connected to the water electrolysis chamber 7; after the power supply 15 controls the electrode 13 to be energized, water is electrolyzed to produce hydrogen and oxygen, and the gas enters the water storage chamber 4 through the gas channel between the water electrolysis chamber 7 and the water storage chamber 4. The gas pressure in the water storage chamber 4 increases to break the isolation membrane, and the aqueous solution flows into the powder chamber 9 and dissolves the acid and alkali powders to form a corrosive solution, which flows from the corrosive liquid outlet to the chip surface to achieve corrosion destruction.

[0041] like Figures 1 to 5 As shown, a fast self-destruction module for transient electronics in this embodiment includes an upper layer 1, a middle layer 2 and a lower layer 3.

[0042] A water storage cavity 4 is provided inside the upper layer 1 , in which an aqueous solution is stored for preparing the corrosive liquid. An air hole 5 is provided inside the upper layer 1 , and an insulating film 6 is embedded inside the upper layer 1 . The insulating film 6 is made of PVC material and is located below the water storage cavity 4 .

[0043] An electrolytic water chamber 7 is provided inside the middle layer 2, and an aqueous solution is built in for electrolysis to generate gas. A transition chamber 8 is provided inside the middle layer 2 below the insulating film 6. A powder chamber 9 is provided inside the middle layer 2, and the powder chamber 9 is connected to the transition chamber 8 via a groove 10 provided inside the middle layer 2. A corrosive liquid outlet 11 is provided inside the middle layer 2, and a through groove 12 is provided inside the middle layer 2 to connect the pores 5 and the pre-set acid and alkali powder chamber 9.

[0044] The lower layer 3 is embedded with an electrode 13 , and an electric wire 14 is fixedly connected to the outer surface of the electrode 13 . One end of the electric wire 14 away from the electrode 13 is connected to a power source 15 .

[0045] The materials of the upper layer 1 and the middle layer 2 are PDMS, and the lower layer 3 is a silicon wafer.

[0046] A positioning hole 16 is provided inside the upper layer 1 , and a positioning column 17 is provided on the upper surface of the middle layer 2 at the position of the positioning hole 16 .

[0047] The interior of the pore 5 is connected to the interior of the water electrolysis chamber 7 , and the interior of the pore 5 is connected to the interior of the water storage chamber 4 . The pore 5 is located on the left side of the water storage chamber 4 .

[0048] The interior of the through groove 12 is communicated with the interior of the powder chamber 9 , and one end of the through groove 12 away from the powder chamber 9 is communicated with the interior of the etching liquid outlet 11 .

[0049] The wires 14 and the power sources 15 are both embedded in the lower layer 3 , and the number of wires 14 located on each power source 15 is three.

[0050] The number of the electrolytic water chambers 7 is three, and the three electrolytic water chambers 7 are equidistantly distributed inside the middle layer 2 .

[0051] There are four positioning posts 17 and four positioning holes 16 , and each positioning post 17 and positioning rod is distributed at the four corners of the upper layer 1 and the middle layer 2 . The diameter of the positioning post 17 matches the inner diameter of the positioning hole 16 .

[0052] The powder chamber 9 is distributed in a quadrilateral shape inside the middle layer 2 , and the powder chamber 9 is located between the groove 10 and the through groove 12 .

[0053] Working principle: When the device needs to be destroyed after completing its functional mission, the destruction program is started by remote control, the electrode 13 is energized, and the positive and negative electrodes of the electrode 13 produce hydrogen and oxygen when electrolyzing water. A sufficiently large pressure is generated in the water storage chamber 4 to squeeze the isolation membrane 6. The aqueous solution flows through the transition chamber 8 and the groove 10 and dissolves the acid and alkali powders preset in the powder chamber 9 to form a corrosive solution, and then flows to the chip surface through the through groove 12 and the corrosive liquid outlet to achieve corrosion destruction.

[0054] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention without departing from the principles and intent of the present invention.

Claims

1. A fast self-destruction module for transient electronics, characterized in that: The module is provided with a water storage chamber, an electrolytic water chamber, a powder chamber, an outlet for corrosive liquid, electrodes and a power supply; the module comprises an upper plate, a middle plate and a lower plate arranged in sequence from top to bottom; a water storage chamber and a gas channel are provided inside the upper plate; the bottom opening of the water storage chamber is closed by an insulating film; the inlet of the gas channel is an air hole opened on the lower surface of the upper plate, and its outlet is connected with the water storage chamber; an electrolytic water chamber, a transition chamber, a powder chamber and an outlet for corrosive liquid are provided inside the middle plate; the electrolytic water chamber is connected with the air hole of the upper plate; the transition chamber is opposite to the water storage chamber and is separated into an independent cavity by an insulating film; the transition chamber is arranged in the middle of the middle plate, adjacent to the powder chamber; The inlet of the powder chamber is connected to the transition chamber through a groove, and the outlet is connected to the corrosive liquid outlet through a through groove; the lower plate is provided with an electrode and a power supply, and the electrode is opposite to the electrolytic water chamber; the power supply is connected to the electrode through a wire; the through groove is located on the right side of the middle plate, one end of which is connected to the inside of the powder chamber, and the other end is connected to the corrosive liquid outlet; The water storage chamber is used to hold an aqueous solution, and the electrolytic water chamber is used to hold electrolytic water, and a gas channel is provided between the two chambers; the water storage chamber is located in the middle of the upper plate; the air hole is located on the left side of the upper plate, and is connected to the electrolytic water chamber located on the left side of the middle plate; The powder chamber is used to contain acid and alkali powders, which can form a corrosive solution when mixed with an aqueous solution; an isolation membrane is provided between the powder chamber and the water storage chamber, and the isolation membrane can be broken by gas; The etching liquid outlet is connected to the powder cavity and faces the chip surface; The electrode is connected to the water electrolysis chamber; after the power source controls the electrode to be energized, water is electrolyzed to generate hydrogen and oxygen, and the gas enters the water storage chamber through the gas channel between the water electrolysis chamber and the water storage chamber. The gas pressure in the water storage chamber increases to squeeze the isolation membrane, and the aqueous solution flows into the powder chamber and dissolves the acid and alkali powders to form a corrosive solution, which flows from the corrosive solution outlet to the chip surface to achieve corrosion destruction.

2. The fast self-destructive module for transient electronics according to claim 1, characterized in that: The number of the water storage chamber, the electrolytic water chamber, the transition chamber, the powder chamber, the corrosion liquid outlet, and the electrodes are all three, which are arranged at equal intervals to form three groups of corrosion destruction systems.

3. The fast self-destructive module for transient electronics according to claim 1, characterized in that: The powder chamber is in a quadrilateral structure, is located inside the middle plate, and is located between the transition chamber and the etching liquid outlet.

4. The fast self-destruction module for transient electronics according to claim 1, characterized in that: The electric wires and the power source are embedded in the lower plate.

5. The fast self-destructive module for transient electronics according to claim 1, characterized in that: The edge of the upper plate is provided with a positioning hole, and the upper surface of the middle plate is provided with a positioning column at a position relative to the positioning hole, and the lower surface of the upper plate and the upper surface of the middle plate are fitted together by inserting the positioning column into the positioning hole.

6. The fast self-destructive module for transient electronics according to claim 5, characterized in that: The number of the positioning posts and the number of the positioning holes are both four and are evenly distributed along the circumferential direction; the diameter of the positioning posts is matched with the inner diameter of the positioning holes.

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