A method for producing a single crystal diamond

By setting circular and grid grooves on the substrate stage and depositing a carbon film, the problems of large temperature difference and polycrystalline expansion in diamond single crystal growth were solved, and the mass production of high-quality, high-flatness single crystal diamonds was realized.

CN115726030BActive Publication Date: 2026-04-10ZHEJIANG PIONEER MICROELECTRONICS TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202211594172.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-12-13
Publication Date
2026-04-10
Estimated Expiration
2042-12-13

AI Technical Summary

Technical Problem

In microwave plasma chemical vapor deposition, diamond single crystal growth suffers from problems such as large temperature differences, poor surface smoothness due to polycrystalline expansion at the edges, and shrinkage of the single crystal region, and the growth thickness is limited.

Method used

A substrate stage with a specific structure is used, including circular grooves and grid grooves on the upper surface of the substrate stage, and carbon film is deposited on it. Combined with the optimization of process parameters of microwave plasma chemical vapor deposition, the lateral growth of seed crystals is promoted, the growth of edge polycrystalline crystals is suppressed, and the temperature distribution is improved.

Benefits of technology

It expands the growth area of ​​single-crystal diamond, improves the thickness and quality uniformity of a single growth, reduces production costs, and is suitable for mass production of high-flatness single-crystal diamond.

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Abstract

The application belongs to the field of diamond preparation, and discloses a preparation method of single crystal diamond. The method comprises the following steps: selecting highly close seed crystals and performing acid washing treatment; preparing a substrate table, plating a carbon film on the upper surface of the substrate table, the thickness of the carbon film being 5-10 microns, and cleaning and drying after the plating is completed; placing the acid-washed seed crystals into the substrate table after the plating, then placing the substrate table into a deposition cavity, starting to pass in hydrogen after vacuumizing, and starting to open the microwave etching; after the etching is completed, passing in a mixed gas of methane, carbon dioxide, argon and nitrogen, and growing; after the growing is completed, stopping to pass in methane, increasing the temperature by 100-150 DEG C on the basis of the growing temperature, keeping warm, then cooling to room temperature, and obtaining the single crystal diamond. The application greatly improves the temperature distribution on the seed crystals, promotes the flatness of the growing surface, and can mass-produce single crystal diamond with medium-high quality and high flatness.
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