Medical cosmetology semiconductor laser and packaging method thereof

Abstract

The application relates to a medical and cosmetic semiconductor laser and a packaging method thereof. The laser comprises a water-through heat sink, the front surface of the water-through heat sink is a welding surface, an ALN ceramic sheet is arranged on the welding surface, and a bar array is arranged on the ALN ceramic sheet; a water-through opening is arranged on the back surface of the water-through heat sink, and a water-through channel is connected to the water-through opening; an electrode sheet A is arranged on the upper surface of the water-through heat sink, an electrode sheet connecting groove is arranged on the side surface of the water-through heat sink, and an electrode sheet B and an electrode sheet C are arranged in the electrode sheet connecting groove. The semiconductor laser provided by the application is characterized in that the water-through opening is arranged on the back surface of the laser and is in the same plane as the electrode connecting column, the overall structure of the laser adopts rear water outlet, the water-through opening is led out at the rear end, the use space is effectively reduced, the integration degree is higher, the volume of the rear end application is reduced, compared with other directions of leading out the water opening, the water channel is more convenient for workers to connect, and the laser is mainly applied in the medical and cosmetic field and is convenient for workers to use.

Description

Technical Field

[0001] This invention relates to a semiconductor laser for medical aesthetics and its packaging method, belonging to the field of semiconductor laser array packaging. Background Technology

[0002] Semiconductor lasers are widely used in the field of medical aesthetics due to their current injection pumping characteristics and wavelength selectivity. In this application, based on the principle of selective photothermolysis, lasers of specific wavelengths and energies penetrate the surface of human skin and reach the hair follicle at the root of the hair without damaging human skin tissue. The laser absorbs the melanin in the hair follicle and converts it into heat energy, destroying and removing the hair follicle, thus preventing it from regenerating and achieving the effect of purifying the skin surface.

[0003] In the field of medical aesthetics, the packaging method of using multiple light-emitting chips to form a laser bar, and then packaging multiple laser bars to form a laser array, is the main method for increasing the power of semiconductor lasers. Currently, high-power laser arrays with multiple laser bars are widely used in the medical aesthetics industry. As the application of semiconductor lasers in the medical aesthetics field matures, lasers are developing towards miniaturization, high integration, and high comfort.

[0004] Chinese patent document CN102961185A discloses a semiconductor laser system for laser medical aesthetics. This patent comprises a semiconductor laser array, an optical waveguide, an optical window, and a cooling block for conductive cooling of the contact window. The cooling block consists of a base and a hollow head located above the base. The front of the hollow head tightly fits the sidewall of the contact window. The optical waveguide's port is located in the cavity of the hollow head, with a gap between it and the inner wall of the hollow head. The optical waveguide is clamped and fixed by a pair of slotted fixing blocks, and a hollow pad is provided on the contact surface between the optical waveguide and the fixing blocks. While the laser system presented in this patent has a compact structure and high integration, the integration of too many components inevitably increases the size of the laser. Furthermore, the water inlet is located at the bottom of the laser, resulting in a large volume at the water inlet, which no longer meets the development trend of miniaturization and integration.

[0005] Chinese patent document CN209401976U discloses a macrochannel semiconductor laser, including a laser module and a heat sink module. The heat sink module includes a heat sink body, a water outlet opening forward at the upper end of the heat sink body, and a water inlet opening upward at the lower end of the heat sink body. The water outlet area of ​​the water inlet is no larger than its cross-sectional area. However, the water inlet and outlet of this patent are located at the bottom, requiring a water supply structure to be installed at the bottom when water is supplied, increasing the volume and making it inconvenient to use. In the electrode connection process, electrodes are led out through copper foil and copper-clad laminate, and the interfaces are connected by welding. Under high power and high current conditions, this connection method has drawbacks such as poor positioning accuracy and poor insulation performance. Furthermore, the light-emitting module is welded to the bottom with In solder, which has poor reliability issues. Summary of the Invention

[0006] To address the shortcomings of existing technologies, this invention provides a semiconductor laser for medical aesthetics and its packaging method.

[0007] Terminology Explanation:

[0008] 1. Tungsten-copper heat sink: A packaging material used for conductive heat dissipation of laser bars;

[0009] 2. AlN ceramic sheet: used as insulating material for the positive and negative electrodes at the bottom of the bar, with surface metallization;

[0010] The technical solution of the present invention is as follows:

[0011] A semiconductor laser for medical aesthetics includes a water-cooled heat sink. The front of the heat sink is a welding surface, on which an ALN ​​ceramic sheet is disposed, and a bar array is disposed on the ALN ceramic sheet. A water inlet is disposed on the back of the heat sink, and a water channel is connected to the water inlet. An electrode A is disposed on the upper surface of the heat sink, and an electrode connecting groove is disposed on the side of the heat sink, in which electrode B and electrode C are disposed. Electrode insulating sheets are disposed between electrode A, electrode B, and electrode C and the heat sink.

[0012] According to a preferred embodiment of the present invention, the bar array comprises parallel tungsten-copper heat sinks, with bars disposed between adjacent tungsten-copper heat sinks.

[0013] More preferably, the tungsten copper heat sink is made of W90Cu, has a length of 3-10 mm, and a thickness of 1-2 mm; the number of the bar strips is greater than 1, and the length matches that of the tungsten copper heat sink.

[0014] According to a preferred embodiment of the present invention, the water-cooled heat sink is provided with heat dissipation serrations to increase the contact area with water and improve heat dissipation capacity.

[0015] According to a preferred embodiment of the present invention, the number of water inlets is two, located at the top and bottom of the back of the water-conducting heat sink, respectively.

[0016] According to a preferred embodiment of the present invention, the electrode connecting groove is a convex groove, and the electrode insulating sheet is made of ALN ceramic.

[0017] According to a preferred embodiment of the present invention, electrode plate B is rectangular and electrode plate C is L-shaped, with the short side of electrode plate C located in the electrode plate connecting groove and the long side located on the back of the water-cooled heat sink.

[0018] More preferably, the electrode plate C has two L-shaped electrode terminals on its long side. The electrode terminals are pressed together with the electrode plate C by screws, and a T-shaped insulating washer is provided to ensure insulation between the electrode terminals and the water-cooled heat sink. The electrode terminals facilitate power connection for end users.

[0019] According to a preferred embodiment of the present invention, the water-cooled heat sink is packaged and fixed by an asymmetrical outer shell and a rear baffle. The outer shell adopts an asymmetrical structural design, with the water-cooled heat sink fixed on one side to ensure that the bar is in a centered position. The rear baffle has openings at the corresponding positions of the water inlet and the electrode post to ensure connection.

[0020] Further preferably, the side of the outer casing is provided with fixing holes for fixing a water-cooled heat sink.

[0021] The packaging method for the above-mentioned semiconductor laser for medical aesthetics includes the following steps:

[0022] (1) The ALN ceramic sheet is welded to the water-cooled heat sink welding surface using AuSn solder;

[0023] (2) The tungsten copper heat sink and the bar are welded together with AuSn solder in the structure of tungsten copper heat sink + bar + tungsten copper heat sink to obtain a bar array.

[0024] (3) The bar array is soldered to the ALN ceramic sheet using SnAg solder to achieve indium-free packaging;

[0025] (4) The electrode insulating sheet is soldered to the upper surface of the water-cooled heat sink, the electrode connecting groove on the side of the water-cooled heat sink and the back of the water-cooled heat sink using SnAg solder. Then, the electrode A, electrode B and electrode C are soldered to the electrode insulating sheet using SnAg solder, so that the electrode A, electrode B and electrode C are in series, and the encapsulation is completed.

[0026] Beneficial effects:

[0027] 1. The semiconductor laser provided by this invention has a water inlet located on the back of the laser, on the same plane as the electrode terminals. The overall structure of the laser adopts a rear water outlet, with the water channel leading out at the rear end, which effectively reduces the space required, resulting in higher integration and a smaller volume of the back-end application. Compared with water outlets in other directions, it is easier for staff to connect the water circuit. It is mainly used in the medical aesthetics field, making it convenient for staff to use.

[0028] 2. The semiconductor laser provided by this invention features an asymmetrical housing structure. A water-cooled heat sink is fixed to the side of the housing, ensuring the bar is centered while simultaneously securing the heat sink. This further reduces the laser's size, improves integration, and facilitates downstream use. Furthermore, during use, electrode plates A, B, and C can be connected in series to lead the electrodes to the back side. By using ALN material as an insulating sheet, insulation from the heat sink is achieved while traversing multiple planes, ensuring product reliability and positioning while improving insulation performance.

[0029] 3. The semiconductor laser provided by this invention uses high-temperature solders with temperature gradients, such as AuSn and SnAg, for packaging, instead of using traditional low-temperature In solder for packaging and stacking, thus avoiding the risk of low reliability caused by In solder.

[0030] 4. The packaging method provided by this invention is simple to operate, has high manufacturing efficiency, and is suitable for industrial application. Attached Figure Description

[0031] Figure 1 This is a diagram of a water-cooled heat sink structure.

[0032] Figure 2 This is a diagram of the bar array structure.

[0033] Figure 3 This is a schematic diagram of the overall internal structure of the laser.

[0034] Figure 4 This is a schematic diagram of the electrode connection method;

[0035] Figure 5 This is a schematic diagram of the overall structure of the semiconductor laser for medical aesthetics according to the present invention;

[0036] In the diagram: 1. Bar strip, 2. Tungsten copper heat sink, 3. Water-cooled heat sink, 4. AlN ceramic sheet, 5. Electrode A, 6. Electrode B, 7. Electrode C, 8. Electrode terminal, 9. Electrode insulating sheet, 10. Water channel, 11. Outer shell, 12. Rear baffle, 13. Fixing hole, 14. Welding surface, 15. Electrode connecting groove. Detailed Implementation

[0037] The present invention will be further described below with reference to the embodiments and accompanying drawings, but is not limited thereto.

[0038] Example 1

[0039] like Figures 1-4 As shown, a semiconductor laser for medical aesthetics includes a water-cooled heat sink 3. The front of the water-cooled heat sink 3 is a welding surface 14, and an ALN ​​ceramic sheet 4 is disposed on the welding surface 14. A bar array is disposed on the ALN ceramic sheet 4.

[0040] The water-cooled heat sink 3 has a water inlet on its back. The water channel 10 is fixed to the water inlet on the back of the water-cooled heat sink 3 with screws. A silicone sealing ring is placed between the water channel 10 and the water inlet to ensure that there is no water leakage.

[0041] The upper surface of the water-cooled heat sink 3 is provided with an electrode plate A5, and the side of the water-cooled heat sink 3 is provided with an electrode plate connecting groove 15, in which an electrode plate B6 and an electrode plate C7 are provided.

[0042] Electrode plate B6 is rectangular, and electrode plate C7 is L-shaped. The short side of electrode plate C7 is located within the electrode plate connecting groove 15, and the long side is located on the back of the water-cooled heat sink 3. Electrode insulating sheets 9 are provided between electrode plates A5, B6, and C7 and the water-cooled heat sink 3.

[0043] The bar array includes parallel tungsten copper heat sinks 2, with bars 1 arranged between adjacent tungsten copper heat sinks 2.

[0044] The tungsten copper heat sink 2 is made of W90Cu, with a length of 10mm, a thickness of 1.5mm, a thermal conductivity of 188W / (m*K), and a coefficient of thermal expansion of 6.5ppm / K. The length of the bar 1 matches that of the tungsten copper heat sink 2, and the coefficients of thermal expansion of the two are consistent, which can effectively release the stress during the AuSn packaging process.

[0045] The packaging method for the above-mentioned semiconductor laser for medical aesthetics includes the following steps:

[0046] (1) The ALN ceramic sheet is welded to the water-cooled heat sink welding surface using AuSn solder;

[0047] (2) The tungsten copper heat sink and the bar are welded together with AuSn solder in the structure of tungsten copper heat sink + bar + tungsten copper heat sink to obtain a bar array.

[0048] (3) The bar array is soldered to the ALN ceramic sheet using SnAg solder to achieve indium-free packaging;

[0049] (4) The electrode insulating sheet is soldered to the upper surface of the water-cooled heat sink, the electrode connecting groove on the side of the water-cooled heat sink and the back of the water-cooled heat sink using SnAg solder. Then, the electrode A, electrode B and electrode C are soldered to the electrode insulating sheet using SnAg solder, so that the electrode A, electrode B and electrode C are in series, and the encapsulation is completed.

[0050] Example 2

[0051] A semiconductor laser for medical aesthetics has the structure described in Example 1, except that the tungsten copper heat sink has a length of 8 mm and a thickness of 2 mm.

[0052] Example 3

[0053] A semiconductor laser for medical aesthetics has the structure described in Example 1, except that there are two water inlets 10, respectively located at the top and bottom of the back of the water-cooled heat sink 3. Two L-shaped electrode terminals 8 are provided on the long side of the electrode plate C7. The electrode terminals 8 are pressed together with the electrode plate C7 by screws, and a T-shaped insulating washer is provided to ensure insulation between the electrode terminals 8 and the water-cooled heat sink 3. The electrode terminals 8 facilitate power connection for end users.

[0054] In use, the present invention leads the electrodes to the electrode terminals 8 on the back of the water-cooled heat sink 3 by connecting the electrode plates A5, B6 and C7 in series. Then, the power supply is turned on through the electrode terminals 8 to output high-power laser.

[0055] Example 4

[0056] A semiconductor laser for medical aesthetics has the structure described in Example 1, except that the water-conducting heat sink 3 is fixed to the outer shell 11 with screws through the fixing hole 13. The outer shell 11 used has an asymmetrical structure to ensure that the water-conducting heat sink 3 fixed to the outer shell is centered. After fixing the water-conducting heat sink 3, the rear baffle 12 is fixed to the back of the outer shell 11 to ensure sealing. The rear baffle 12 has holes at the corresponding positions of the water channel 10 and the electrode terminal 8 to ensure connection.

Claims

1. A medical and cosmetic use semiconductor laser, characterized by, The water-through heat sink includes a front welding surface, an ALN ceramic sheet arranged on the welding surface, and a bar array arranged on the ALN ceramic sheet; a water-through opening is arranged on the back surface of the water-through heat sink, and a water-through channel is connected to the water-through opening; an electrode sheet A is arranged on the upper surface of the water-through heat sink, an electrode sheet connecting groove is arranged on the side surface of the water-through heat sink, and an electrode sheet B and an electrode sheet C are arranged in the electrode sheet connecting groove; an electrode insulating sheet is arranged between the electrode sheet A, the electrode sheet B, the electrode sheet C and the water-through heat sink. The bar array includes parallel tungsten-copper heat sinks, and a bar is arranged between adjacent tungsten-copper heat sinks; the water-through heat sink is internally provided with a heat dissipation sawtooth; the electrode sheet connecting groove is a convex-shaped groove; the electrode sheet B is rectangular, and the electrode sheet C is L-shaped, with the short side of the electrode sheet C located in the electrode sheet connecting groove and the long side located on the back surface of the water-through heat sink; the water-through heat sink is packaged and fixed by an asymmetric structure of a shell and a back plate.

2. The medical aesthetic use semiconductor laser as claimed in claim 1, wherein, The tungsten-copper heat sink is made of W90Cu, has a length of 3-10 mm and a thickness of 1-2 mm; the number of bars is greater than 1, and the length of the bar matches the length of the tungsten-copper heat sink.

3. The medical and cosmetic use semiconductor laser as claimed in claim 1, wherein, The number of water-through openings is 2, and the water-through openings are respectively located at the top and bottom of the back surface of the water-through heat sink.

4. The medical and cosmetic use semiconductor laser as claimed in claim 1, wherein, The electrode insulating sheet is made of ALN ceramic.

5. The medical and cosmetic use semiconductor laser as claimed in claim 1, wherein, Two L-shaped electrode terminals are arranged on the long side of the electrode sheet C, the electrode terminals are press-connected to the electrode sheet C by screws, and a T-shaped insulating washer is arranged.

6. The medical and cosmetic treatment semiconductor laser as claimed in claim 1, wherein, The shell is further provided with a fixing hole.

7. The packaging method of the semiconductor laser for medical and cosmetic use according to claim 1, wherein The steps include the following: (1) The ALN ceramic sheet is welded to the welding surface of the water-through heat sink by AuSn solder; (2) The tungsten-copper heat sink and the bar are welded together in the structure of tungsten-copper heat sink+bar+tungsten-copper heat sink by AuSn solder to obtain the bar array; (3) The bar array is welded to the ALN ceramic sheet by SnAg solder to realize indium-free packaging; (4) The electrode insulating sheet is welded to the upper surface of the water-through heat sink, the electrode sheet connecting groove of the side surface of the water-through heat sink and the back surface of the water-through heat sink by SnAg solder, and then the electrode sheet A, the electrode sheet B and the electrode sheet C are welded to the electrode insulating sheet by SnAg solder, so that the electrode sheet A, the electrode sheet B and the electrode sheet C are in series, and the packaging is completed.

Images