A method for preparing a patterned substrate by electrospinning and a patterned substrate

Abstract

The embodiment of the present invention discloses a method for preparing a patterned substrate by electrospinning and a patterned substrate. The method for preparing a patterned substrate by electrospinning comprises: forming an electrospinning frame on a substrate by an electrospinning process, the electrospinning frame comprising a plurality of filamentary structures, and there are gaps between adjacent filamentary structures; using the electrospinning frame as a mask to form a patterned microstructure or a mask pattern in the gaps between adjacent filamentary structures; removing the electrospinning frame, retaining the patterned microstructure on the substrate, and forming a patterned composite substrate, or retaining the mask pattern on the substrate, and then using the mask pattern as a mask to form a patterned microstructure on the substrate, and forming a patterned substrate. The embodiment of the present invention solves the problem that the traditional method cannot guarantee the quality of the patterned substrate and it is difficult to achieve a nanometer-level patterned substrate, and achieves low-cost and high-precision processing benefits.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor technology, and in particular to a method for preparing a patterned substrate by using electrospinning and a patterned substrate. Background Art

[0002] As the quality competition in the chip market has intensified in the past two years, improving quality has become imperative, especially for important raw materials such as graphic substrates, which will play a key role. Therefore, domestic companies have begun to think about improving the quality of their products by further improving the product preparation methods through technical upgrades.

[0003] In the prior art, a SiO2 film layer is usually plated on a sapphire substrate, and a photoresist is coated on the SiO2 film layer, photoresist columns are formed by exposure and development, and then a one-step etching method is used to form a composite substrate.

[0004] However, this method has the following disadvantages: first, the processing technology is complex and the cost is high; second, etching is required to obtain a patterned composite substrate, the sapphire depth cannot be controlled, and there is a risk of damaging the C-surface, which is not conducive to improving the crystal growth quality at the epitaxial end and improving the epitaxial yield; finally, due to the high processing accuracy requirements of the photolithography plate and the nano-level mask body pattern, it is difficult to meet the aspect ratio of its glue column, so it is difficult to achieve a nano-level patterned substrate. Summary of the invention

[0005] The present invention provides a method for preparing a patterned substrate by utilizing electrostatic spinning and the patterned substrate, so as to solve the problem that the quality of the patterned substrate cannot be guaranteed by the conventional method and it is difficult to realize a nanometer-level patterned substrate.

[0006] In a first aspect, an embodiment of the present invention provides a method for preparing a patterned substrate by electrospinning, comprising:

[0007] An electrospinning process is used to form an electrospinning frame on a substrate, wherein the electrospinning frame includes a plurality of filamentous structures, and gaps are present between adjacent filamentous structures;

[0008] Using the electrospinning frame as a mask, forming a pattern microstructure or a mask pattern in the gaps between adjacent filamentous structures;

[0009] The electrospinning frame is removed, and the graphic microstructure on the substrate is retained to form a graphic composite substrate, or the mask pattern on the substrate is retained, and the mask pattern is used as a mask to form a graphic microstructure on the substrate to form a graphic substrate.

[0010] Optionally, the electrospinning frame is used as a mask to form a pattern microstructure or a mask pattern in the gap between adjacent filamentous structures, including:

[0011] Using the electrospinning frame as a mask, forming a heterogeneous layer on the substrate, wherein the heterogeneous layer includes a heterogeneous pattern microstructure located between adjacent filamentous structures;

[0012] Removing the electrospinning frame and retaining the graphic microstructure on the substrate to form a graphic composite substrate, comprising:

[0013] The electrospinning frame is removed to form a patterned composite substrate.

[0014] Optionally, using the electrospinning frame as a mask to form a heterogeneous layer on the substrate comprises:

[0015] The heterogeneous layer is deposited by plasma enhanced chemical vapor deposition process, or the heterogeneous gel is coated by sol-gel method and condensed to form the heterogeneous layer.

[0016] Optionally, when the heterogeneous layer is deposited by a plasma enhanced chemical vapor deposition process, an electrospinning process is used to form an electrospinning frame on the substrate, comprising:

[0017] The electrostatic spinning frame having a softening temperature higher than the working temperature of the plasma enhanced chemical vapor deposition process is formed on the substrate by using the electrostatic spinning process.

[0018] Optionally, the thickness of the heterogeneous layer is less than or equal to the height of the electrospinning frame.

[0019] Optionally, an electrospinning frame is formed on a substrate using an electrospinning process, comprising:

[0020] An electrospinning process is used to form an electrospinning frame on the substrate, wherein the gap between adjacent filamentous structures is 0.5 to 3 μm;

[0021] Using the electrospinning frame as a mask, forming a heterogeneous layer on the substrate, comprising:

[0022] The electrospinning frame is used as a mask to form a hollow heterogeneous pattern microstructure between adjacent filamentous structures.

[0023] Optionally, using the electrospinning frame as a mask to form a pattern microstructure or a mask pattern in the gap between adjacent filamentous structures, comprises:

[0024] Using the electrospinning frame as a mask, forming a photoresist layer on the substrate, wherein the photoresist layer includes a photoresist mask structure located between adjacent filamentous structures;

[0025] The electrospinning frame is removed, the mask pattern on the substrate is retained, and a patterned microstructure is formed on the substrate using the mask pattern as a mask to form a patterned substrate, comprising:

[0026] removing the electrospinning frame and retaining the photoresist mask structure on the substrate;

[0027] The surface of the base is patterned using the photoresist mask structure as a mask to form a patterned substrate.

[0028] Optionally, an electrospinning frame is formed on a substrate using an electrospinning process, comprising:

[0029] An electrospinning process is adopted to form a plurality of sequentially stacked electrospinning frames on the substrate to form a target electrospinning frame, and the target electrospinning frame is complementary in shape to the target graphic microstructure.

[0030] Optionally, an electrospinning frame is formed on a substrate using an electrospinning process, comprising:

[0031] Using an electrospinning process, a water-soluble or fat-soluble electrospinning framework is formed on the substrate;

[0032] Removing the electrospinning frame, comprising:

[0033] The electrospinning framework is dissolved using water or an organic solvent.

[0034] Optionally, the electrospinning process is used, and before forming a water-soluble or fat-soluble electrospinning framework on the substrate, the method further comprises:

[0035] Prepare water-soluble or fat-soluble polymer fluid spinning solution.

[0036] In a second aspect, an embodiment of the present invention further provides a patterned substrate, which is prepared by the method for preparing a patterned substrate by electrospinning as described in any one of the first aspect of the present invention.

[0037] The embodiments of the present invention provide a method for preparing a patterned substrate by electrospinning and a patterned substrate, wherein an electrospinning frame is formed on a substrate by adopting an electrospinning process, wherein the electrospinning frame includes a plurality of filamentary structures, and there are gaps between adjacent filamentary structures; the electrospinning frame is used as a mask to form a graphic microstructure or a mask pattern in the gaps between adjacent filamentary structures; the electrospinning frame is removed, and the graphic microstructure on the substrate is retained to form a patterned composite substrate; alternatively, a mask pattern is formed by using a photoresist coating method, and the mask pattern on the substrate is retained; and then the mask pattern is used as a mask to form a graphic microstructure on the substrate to form a patterned substrate. The embodiments of the present invention solve the problem that the traditional method cannot guarantee the quality of the patterned substrate and it is difficult to achieve a nanometer-level patterned substrate. A patterned composite substrate can be obtained without etching, and the structure is a depth-free pattern structure, which is beneficial to the light extraction efficiency after epitaxy. Since it is not etched, the C surface is not damaged and its state is better, which is beneficial to improving the crystal growth quality of the epitaxial end and improving the epitaxial yield. At the same time, the period and size of the pattern can be adjusted by controlling the diameter of the electrospinning fiber, thereby achieving a nanometer-level patterned substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention;

[0039] Figure 2 It is a structural flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention;

[0040] Figure 3 It is a structural flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention;

[0041] Figure 4 is a flow chart of a method for preparing a patterned substrate by electrospinning provided by another embodiment of the present invention;

[0042] Figure 5 is a flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention;

[0043] Figure 6 It is a structural flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention;

[0044] Figure 7 is a flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention;

[0045] Figure 8 is a structural diagram of a patterned composite substrate provided by an embodiment of the present invention;

[0046] Fig. 9 It is a structural diagram of another patterned substrate provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0048] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. It should be noted that the directional words such as "upper", "lower", "left", "right" and the like described in the embodiments of the present invention are described at the angles shown in the accompanying drawings and should not be understood as limitations on the embodiments of the present invention. In addition, in the context, it is also necessary to understand that when it is mentioned that an element is formed "on" or "under" another element, it can not only be directly formed "on" or "under" another element, but also indirectly formed "on" or "under" another element through an intermediate element. The terms "first", "second", etc. are only used for descriptive purposes and do not represent any order, quantity or importance, but are only used to distinguish different components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood in specific circumstances.

[0049] The term “including” and its variations used in the present invention are open inclusions, that is, “including but not limited to.” The term “based on” means “based at least in part on.” The term “one embodiment” means “at least one embodiment.”

[0050] It should be noted that the concepts such as "first" and "second" mentioned in the present invention are only used to distinguish the corresponding contents, and are not used to limit the order or interdependence.

[0051] It should be noted that the modifications of "one" and "plurality" mentioned in the present invention are illustrative rather than restrictive, and those skilled in the art should understand that, unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0052] Figure 1 is a flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention. Figure 2 Figure 3 yes Figure 1 The structural flow chart of the method for preparing a patterned substrate by electrospinning is shown in FIG. Figure 1 and Figure 2 Figure 3 , the method for preparing the patterned substrate comprises:

[0053] S110, forming an electrospinning frame on the substrate by using an electrospinning process, wherein the electrospinning frame includes a plurality of filamentous structures, and gaps exist between adjacent filamentous structures.

[0054] The electrospinning frame can be understood as a frame structure formed by the electrospinning process. Figure 2 Figure a) and Figure 3 d), the electrospinning frame 20 includes a plurality of filamentary structures 21, and there are gaps 22 between adjacent filamentary structures. The gaps 22 can be non-periodic gaps or periodic gaps, and the following description uses periodic gaps. The size and period of the frame structure can be adjusted by changing the material and parameter settings to meet the production requirements of different products.

[0055] Specifically, the user uses near-field electrospinning drawing software to draw the required high-temperature resistant and water-soluble framework structure according to actual needs, and uses the electrospinning process to spray electrospinning fibers on the framework structure drawn by the software to form a corresponding electrospinning frame 20 on the substrate 10.

[0056] Exemplarily, the diameter of the electrospun fiber printed is set to 1um, and the gap between adjacent filamentary structures is 800nm. The length and width of the corresponding electrospinning frame 20 are 800nm, and the distance between the frame structures is the diameter of the spinning fiber, that is, 1um.

[0057] S120, using the electrospinning frame as a mask to form a pattern microstructure or a mask pattern in the gaps between adjacent filamentous structures.

[0058] Among them, the graphic microstructure can be understood as the tiny protruding structure formed by SIO2 deposition between the electrospinning frames; the mask pattern can be understood as the graphic structure formed by the photoresist between the electrospinning frames.

[0059] Specifically, in one embodiment of the present invention, reference Figure 2 b), on the substrate 10, using the electrospinning frame 20 as a mask, some heterogeneous structures are deposited on the substrate 10 and the electrospinning frame 20, and then a graphic microstructure 30 is formed in the gap between the adjacent filamentary structures 21 of the electrospinning frame 20. In another embodiment of the present invention, refer to Figure 3 In FIG. e), on the substrate 10, the electrospinning frame 20 is used as a mask to apply glue, and at this time, a mask pattern 40 is formed in the gap between adjacent filamentary structures 21 of the electrospinning frame.

[0060] S130, removing the electrospinning frame, retaining the graphic microstructure on the substrate, and forming a graphic composite substrate, or retaining the mask pattern on the substrate, and then using the mask pattern as a mask to form a graphic microstructure on the substrate, and forming a graphic substrate.

[0061] Specifically, refer to Figure 2 In one embodiment of the present invention, after the pattern microstructure 30 on the substrate 10 is formed, the substrate 10 is immersed in a solution to dissolve the electrospinning frame 20 and cause the SIO2 layer 32 deposited on the frame structure to fall off, leaving the pattern microstructure 30 on the surface of the substrate to form a patterned composite substrate, that is, Figure 2 The structure shown in Figure c). Figure 3 In another embodiment of the present invention, after the mask pattern 40 on the substrate is formed, the entire substrate 10 is immersed in a solution to dissolve the electrospinning frame 20 and cause the photoresist 41 deposited on the frame structure to fall off, leaving the mask pattern 40 on the surface of the substrate 10, i.e., the photoresist column, and using the mask pattern 40 as a mask to form a pattern microstructure on the substrate 10, which is dry-etched to form a patterned substrate, i.e., Figure 3 The structure shown in figure g).

[0062] The embodiment of the present invention provides a method for preparing a patterned substrate by electrospinning, wherein an electrospinning frame is formed on a substrate by adopting an electrospinning process, wherein the electrospinning frame includes a plurality of filamentary structures, and there are gaps between adjacent filamentary structures; the electrospinning frame is used as a mask to form a patterned microstructure or a mask pattern in the gaps between adjacent filamentary structures; the electrospinning frame is removed, and the patterned microstructure on the substrate is retained to form a patterned composite substrate, or a mask pattern is formed by using a uniform "photoresist" method, and the mask pattern on the substrate is retained, and then the mask pattern is used as a mask to form a patterned microstructure on the substrate to form a patterned substrate. The embodiment of the present invention solves the problem that the traditional method cannot guarantee the quality of the patterned substrate and it is difficult to realize a nanometer-level patterned substrate. The patterned composite substrate can be obtained without etching, and the structure is a depthless pattern structure, which is beneficial to the light extraction efficiency after epitaxy. Since the C surface is not damaged without etching, its state is better, which is beneficial to improving the crystal growth quality of the epitaxy end and improving the epitaxy yield.

[0063] Optionally, the above step S110, forming an electrospinning frame on the substrate using an electrospinning process, includes:

[0064] An electrospinning process is adopted to form a water-soluble or fat-soluble electrospinning framework on a substrate;

[0065] In step S130, removing the electrospinning frame may include:

[0066] Dissolve the electrospinning framework using water or organic solvent.

[0067] Specifically, when removing the electrospinning frame, it is necessary to select the corresponding water or organic solvent to dissolve it according to the water-soluble or fat-soluble material of the electrospinning frame. Figure 3 As shown in FIG. e), when a fat-soluble electrospinning frame 20 is formed on the substrate 10, the selected organic solvent cannot dissolve the photoresist, thereby destroying the integrity of the mask pattern.

[0068] For example, the fat-soluble electrospinning frame can be prepared by using polylactic acid and P3HT as solutes and chloroform as solvent. Chloroform selectively dissolves the two solutes but does not dissolve the photoresist.

[0069] Optionally, the above step S110, before forming a water-soluble or fat-soluble electrospinning frame on the substrate using an electrospinning process, further includes:

[0070] Prepare water-soluble or fat-soluble polymer fluid spinning solution.

[0071] Specifically, before using the electrospinning process, it is first necessary to prepare a water-soluble or fat-soluble polymer fluid spinning solution for near-field electrospinning.

[0072] For example, when preparing a water-soluble polymer fluid spinning solution, an aqueous polyurethane emulsion, ammonia water and sodium carboxymethyl cellulose are mixed and stirred at a speed of 60 r / min for 15 minutes to obtain a high-temperature resistant aqueous fluid polyurethane ink vehicle.

[0073] Figure 4 is a flow chart of a method for preparing a patterned substrate by electrospinning provided by another embodiment of the present invention. Figure 2 yes Figure 4 The structural flow chart of the method for preparing a patterned substrate by electrospinning is shown in FIG. Figure 2 and Figure 4 As shown, the method includes:

[0074] S210, forming an electrospinning frame on the substrate using an electrospinning process.

[0075] S220, using the electrospinning frame as a mask to form a heterogeneous layer on the substrate, wherein the heterogeneous layer includes a heterogeneous graphic microstructure located between adjacent filamentous structures.

[0076] Specifically, refer to Figure 2In FIG. b), on a substrate 10, an electrospinning frame 20 is used as a mask, and a plasma enhanced chemical vapor deposition process is used to plate SIO2 on the surface of the substrate 10 and the electrospinning frame 20 to form a heterogeneous layer, wherein the heterogeneous layer includes a heterogeneous graphic microstructure 30 located between adjacent filamentary structures 21 of the electrospinning frame.

[0077] S230, removing the electrospinning frame to form a patterned composite substrate.

[0078] Specifically, refer to Figure 2 After the heterogeneous pattern microstructure 30 on the substrate 10 is formed, the substrate 10 is immersed in a solution to dissolve the electrospinning frame 20 and to make the SIO2 layer 32 deposited on the frame structure fall off, leaving a patterned composite substrate on the surface of the substrate, that is, Figure 2 The structure shown in Figure c).

[0079] Optionally, in step S220, using the electrospinning frame as a mask to form a heterogeneous layer on the substrate includes:

[0080] The heterogeneous layer is deposited by plasma enhanced chemical vapor deposition process, or the heterogeneous gel is coated by sol-gel method and condensed to form the heterogeneous layer.

[0081] The heterogeneous layer is a film layer made of a material different from that of the substrate. For example, it may be a SIO2 layer formed on the substrate 10 .

[0082] Specifically, when the plasma enhanced chemical vapor deposition process is used, a strong electric field or magnetic field is used to ionize the required SiO2 gas source molecules to generate plasma, and after a series of chemical and plasma reactions, a SIO2 layer, i.e., a heterogeneous layer, is formed on the surface of the substrate 10; when the sol-gel method is used to coat the heterogeneous gel, silicon alkoxide or silicon halide is used as a raw material, alcohol is used as a eutectic agent, and an acid or base is added as a catalyst. Through the hydrolysis and polycondensation of silicon alkoxide or silicon halide, SiO2 gel is formed, and then evenly spin-coated on a wafer with a frame structure, and SiO2 graphics, i.e., a heterogeneous layer, are obtained through polycondensation. It should be noted that an aqueous solution is required to dissolve the SiO2 gel. At this time, the electrospinning frame 20 should be a fat-soluble material to avoid being dissolved by the aqueous solution and destroying the integrity.

[0083] Optionally, in step S220, when the heterogeneous layer is deposited by plasma enhanced chemical vapor deposition, an electrospinning process is used to form an electrospinning frame on the substrate, including:

[0084] An electrospinning process is adopted to form an electrospinning frame on a substrate whose softening temperature is higher than the working temperature of a plasma enhanced chemical vapor deposition process.

[0085] Specifically, in one embodiment of the present invention, reference Figure 2 Since the structure of the electrospinning frame 20 formed on the substrate 10 must be intact when the heterogeneous layer is deposited using the plasma enhanced chemical vapor deposition process, the softening temperature of the electrospinning frame 20 must be higher than the working temperature of the plasma enhanced chemical vapor deposition process.

[0086] Exemplarily, the PECVD operating temperature is set to 200° C., and when the softening temperature of the electrospinning frame is 240° C., the electrospinning frame 20 will not be softened, thereby affecting the structural integrity thereof.

[0087] Optionally, in step S220, the thickness of the heterogeneous layer is less than or equal to the height of the electrospinning frame.

[0088] Specifically, refer to Figure 2 In the figure b), when the heterogeneous layer is deposited by plasma enhanced chemical vapor deposition process, SIO2 is uniformly deposited on the surface of multiple filamentary structures 21 of the electrospinning frame and in the gaps 22 between adjacent filamentary structures. By setting the thickness of the heterogeneous layer to be less than or equal to the height of the electrospinning frame 20, it is avoided that the deposition height of the heterogeneous layer exceeds the electrospinning frame 20 and adheres to the SIO2 layer 32 deposited on the surface of the filamentary structure 21 of the electrospinning frame 20. At the same time, the thickness of the heterogeneous layer is set to be less than or equal to the height of the electrospinning frame. When SIO2 is deposited on the substrate surface to a certain thickness, it grows and closes laterally, thereby forming a hollow heterogeneous pattern microstructure 31.

[0089] Optionally, in step S210, an electrospinning frame is formed on a substrate using an electrospinning process, including:

[0090] An electrospinning process is used to form an electrospinning frame on a substrate with a gap of 0.5 to 3 μm between adjacent filamentary structures;

[0091] Using the electrospinning frame as a mask, a heterogeneous layer is formed on the substrate, including:

[0092] Using the electrospinning framework as a mask, hollow heterogeneous patterned microstructures were formed between adjacent filamentous structures.

[0093] Specifically, refer to Figure 2 In Figure b), a plasma enhanced chemical vapor deposition process is used to deposit a heterogeneous layer. When the gap 22 between adjacent filamentary structures 21 of the electrospinning frame is 0.5 to 3 μm, since the lateral deposition rate of the heterogeneous layer is lower than the longitudinal deposition rate, when the longitudinal deposition reaches a certain height, the SIO2 in the gap 22 between adjacent filamentary structures 21 can grow and close laterally, thereby forming a hollow heterogeneous graphic microstructure 31, thereby improving the light refractive index of the patterned substrate and increasing the light extraction efficiency.

[0094] Figure 5is a flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention. Figure 3 yes Figure 5 The structural flow chart of the method for preparing a patterned substrate by electrospinning is shown in FIG. Figure 3 Figure 5 As shown, the method includes:

[0095] S310, forming an electrospinning frame on the substrate by using an electrospinning process, wherein the electrospinning frame includes a plurality of filamentous structures, and gaps exist between adjacent filamentous structures.

[0096] S320, using the electrospinning frame as a mask, forming a photoresist layer on the substrate. The photoresist layer includes a photoresist mask structure located between adjacent filamentous structures.

[0097] Specifically, refer to Figure 3 In figure e), on the substrate 10, the electrospinning frame 20 is used as a mask, and a photoresist layer is coated on the surface of the substrate 10 and the electrospinning frame 20. The photoresist layer includes a photoresist mask structure 40 located between adjacent filamentary structures 21 of the electrospinning frame 20.

[0098] S330, removing the electrospinning frame, and retaining the photoresist mask structure on the substrate.

[0099] Specifically, refer to Figure 3 After the photoresist mask structure 40 on the substrate 10 is formed, the entire substrate 10 is immersed in a solution to dissolve the electrospinning frame 20 and cause the photoresist layer 41 deposited on the frame structure to fall off, leaving the photoresist mask structure on the substrate. Figure 3 It should be noted that the photoresist is soluble in an organic solvent, and the electrospinning frame 20 should be a water-soluble material, and the corresponding solution is an aqueous solution.

[0100] S340, using the photoresist mask structure as a mask, patterning the surface of the substrate to form a patterned substrate.

[0101] Specifically, refer to Figure 3 , using the photoresist mask structure 40 as a mask, the surface of the substrate is patterned by dry etching to form a patterned substrate, that is, Figure 3 The structure shown in figure g).

[0102] Figure 7 is a flow chart of a method for preparing a patterned substrate by electrospinning provided by an embodiment of the present invention. Figure 6 yes Figure 7 The structural flow chart of the method for preparing a patterned substrate by electrospinning is shown in FIG. Figure 6 Figure 7 As shown, the method includes:

[0103] S410, using an electrospinning process to form a plurality of electrospinning frames stacked in sequence on a substrate to form a target electrospinning frame, wherein the target electrospinning frame is complementary in shape to the target graphic microstructure.

[0104] Specifically, since the size, shape, position and period of the electrospinning framework structure formed by the electrospinning technology can be adjusted according to actual needs, the shape of the framework structure can be controlled by incrementally changing the diameter of the electrospinning fibers to form a target electrospinning architecture.

[0105] Exemplary, reference Figure 4 In Figure h), the electrospinning process is adopted. Under the condition of keeping the same cycle, the diameter of the electrospinning is gradually reduced, and a trapezoidal electrospinning structure 50 is formed by multiple superpositions. The trapezoidal electrospinning structure 50 is complementary in shape to the inverted trapezoidal graphic microstructure 51 formed.

[0106] S420, using the electrospinning frame as a mask to form a pattern microstructure or a mask pattern in the gaps between adjacent filamentous structures.

[0107] S430, removing the electrospinning frame, retaining the pattern microstructure on the substrate, and forming a patterned composite substrate, or retaining the mask pattern on the substrate, and then using the mask pattern as a mask to form a pattern microstructure on the substrate, and forming a patterned substrate.

[0108] In the embodiment of the present invention, an electrospinning process is adopted to form a plurality of electrospinning frames stacked in sequence on a substrate to form a target electrospinning frame, and the target electrospinning frame is complementary to the target graphic microstructure in shape; then the electrospinning frame is used as a mask to form a graphic microstructure or a mask pattern in the gap between adjacent filamentous structures; finally, the electrospinning frame is removed, and the graphic microstructure on the substrate is retained to form a graphic composite substrate, or the mask pattern on the substrate is retained, and the mask pattern is used as a mask to form a graphic microstructure on the substrate to form a graphic substrate. The diameter of the electrospinning fiber can be changed to further control the shape of the pattern to obtain a graphic composite substrate with different structures, effectively increasing the reflective interface area of ​​the graphic substrate, thereby improving the light extraction rate, and also meeting different product operation requirements.

[0109] Based on the method for preparing a patterned substrate by electrospinning provided in the above embodiment, an embodiment of the present invention further provides a patterned substrate. Figure 8 is a structural diagram of a patterned composite substrate provided by an embodiment of the present invention, Fig. 9It is a structural diagram of another patterned substrate provided by an embodiment of the present invention. The above-mentioned substrate is prepared by using the method for preparing a patterned substrate by electrospinning in any one of the embodiments of the present invention, and thus has the same beneficial effects.

[0110] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for preparing a patterned substrate by electrospinning, characterized in that: include: An electrospinning process is used to form an electrospinning frame on a substrate, wherein the electrospinning frame includes a plurality of filamentous structures, and gaps are present between adjacent filamentous structures; Using the electrospinning frame as a mask, forming a pattern microstructure or a mask pattern in the gaps between adjacent filamentous structures; Removing the electrospinning frame, retaining the graphic microstructure on the substrate, and forming a graphic composite substrate, or retaining the mask pattern on the substrate, and then using the mask pattern as a mask to form a graphic microstructure on the substrate, and forming a graphic substrate; wherein, using the electrospinning frame as a mask, a heterogeneous layer is formed on the substrate, wherein the heterogeneous layer includes a heterogeneous pattern microstructure located between adjacent filamentous structures; Wherein, an electrospinning process is used to form an electrospinning frame on the substrate, in which the gap between adjacent filamentous structures is 0.5 to 3 μm; Using the electrospinning frame as a mask, forming a heterogeneous layer on the substrate, comprising: Using the electrospinning frame as a mask, a hollow heterogeneous pattern microstructure is formed between adjacent filamentous structures, thereby increasing the light refractive index of the patterned substrate and enhancing the light extraction efficiency; An electrospinning frame is formed on a substrate by an electrospinning process, comprising: Using an electrospinning process, a plurality of electrospinning frames stacked in sequence are formed on the substrate to form a target electrospinning frame, wherein the target electrospinning frame is complementary in shape to the target graphic microstructure; The electrospinning framework gradually reduces the diameter of the electrospinning while maintaining the same cycle, and forms a trapezoidal electrospinning framework through multiple stacking, and the trapezoidal electrospinning framework is complementary to the inverted trapezoidal graphic microstructure formed; Wherein, the substrate used in the method for preparing a patterned substrate by electrospinning is a sapphire substrate.

2. The method according to claim 1, characterized in that Using the electrospinning frame as a mask, forming a pattern microstructure or a mask pattern in the gap between adjacent filamentous structures, comprising: Removing the electrospinning frame and retaining the graphic microstructure on the substrate to form a graphic composite substrate, comprising: The electrospinning frame is removed to form a patterned composite substrate.

3. The method according to claim 2, characterized in that Using the electrospinning frame as a mask, forming a heterogeneous layer on the substrate, comprising: The heterogeneous layer is deposited by plasma enhanced chemical vapor deposition process, or the heterogeneous gel is coated by sol-gel method and condensed to form the heterogeneous layer.

4. The method according to claim 3, characterized in that When the heterogeneous layer is deposited by a plasma enhanced chemical vapor deposition process, an electrospinning frame is formed on a substrate by an electrospinning process, comprising: The electrostatic spinning frame having a softening temperature higher than the working temperature of the plasma enhanced chemical vapor deposition process is formed on the substrate by using the electrostatic spinning process.

5. The method according to claim 2, characterized in that: The thickness of the heterogeneous layer is less than or equal to the height of the electrospinning frame.

6. The method according to claim 1, characterized in that Using the electrospinning frame as a mask, forming a pattern microstructure or a mask pattern in the gap between adjacent filamentous structures, comprising: Using the electrospinning frame as a mask, forming a photoresist layer on the substrate, wherein the photoresist layer includes a photoresist mask structure located between adjacent filamentous structures; The electrospinning frame is removed, the mask pattern on the substrate is retained, and a patterned microstructure is formed on the substrate using the mask pattern as a mask to form a patterned substrate, comprising: removing the electrospinning frame and retaining the photoresist mask structure on the substrate; The surface of the base is patterned using the photoresist mask structure as a mask to form a patterned substrate.

7. The method according to claim 1, characterized in that An electrospinning frame is formed on a substrate by an electrospinning process, comprising: Using an electrospinning process, a water-soluble or fat-soluble electrospinning framework is formed on the substrate; Removing the electrospinning frame, comprising: The electrospinning framework is dissolved using water or an organic solvent.

8. The method according to claim 7, characterized in that The electrospinning process is used, and before forming a water-soluble or fat-soluble electrospinning framework on the substrate, the method further comprises: Prepare water-soluble or fat-soluble polymer fluid spinning solution.

9. A patterned substrate, characterized in that: The patterned substrate is prepared by the method for preparing the patterned substrate by electrospinning as described in any one of claims 1 to 8.

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