Electrostatic chuck with multiple heating zones

Abstract

This invention relates to an electrostatic chuck with a multiple heating zone structure. The electrostatic chuck with multiple heating zones includes: multiple miniature multi-heater zones (11_1 to 11_N), each of which can be individually heated and controlled by a heating element; a switching module (13) including individual switching devices (14_1 to 14_N) connected to each of the multiple miniature multi-heater zones (11_1 to 11_N); and a switching control module (15) controlling the operation of the switching module (13), wherein different portions of a wafer fixed to the electrostatic chuck are independently heated by each miniature multi-heater zone (11_1 to 11_N).

Description

Technical Field

[0001] This invention relates to an electrostatic chuck with a multi-heating zone structure, specifically, to an electrostatic chuck with a multi-heating zone structure, which has multiple heating zones that are divided from each other, so that each zone can be heated and controlled individually. Background Technology

[0002] Electrostatic chucks used in etching processes, a key semiconductor manufacturing technique, can function as both wafer chucking and temperature control devices. Maintaining a uniform wafer temperature is crucial for process uniformity during etching, thereby improving yield. To ensure this temperature uniformity, the ESC temperature needs to be controlled. International publication WO 2011 / 049620 discloses a heating plate with a flat heater region for semiconductor processing. WO 2013 / 049589 discloses an ESC with temperature control within a processing chamber. To maintain uniform wafer temperature characteristics, the temperature of the ESC used to hold the wafer needs to be controlled, and a heating device can be installed on the insulating layer formed on the upper part of the ESC to control the temperature. However, it is difficult to uniformly control the temperature of the entire ESC or the entire wafer using such a heating device. Temperature deviations may occur between different parts of the wafer due to heating with this device, requiring compensation for these localized temperature variations. Therefore, the electrostatic chuck that contacts the wafer is divided into multiple zones, and each zone requires individual temperature control. Additionally, a method needs to be developed so that the temperature control device does not interfere with the process. However, such a method is not disclosed in the prior art.

[0003] The present invention aims to solve the problems existing in the prior art and has the following objectives.

[0004] Existing technical documents

[0005] Patent documents

[0006] Prior art 1: International Publication No. WO 2011 / 049620 (Rum Research, published 2011.04.28) describes a heating plate with a flat heater region for semiconductor processing.

[0007] Prior art 2: International Publication No. WO 2013 / 049589 (Applied Materials, published on 2013.04.04) describes an electrostatic chuck with temperature control. Summary of the Invention

[0008] (a) Technical problems to be solved

[0009] The purpose of this invention is to provide an electrostatic chuck with a multi-heating zone structure, which individually controls the temperature of each zone, thereby controlling the overall temperature distribution of the electrostatic chuck.

[0010] (II) Technical Solution

[0011] According to a preferred embodiment of the present invention, an electrostatic chuck with a multiple heating zone structure includes: multiple miniature multi-heater zones, each of which can be individually heated and controlled by a heating element; a switching module including a separate switching device connected to each of the multiple miniature multi-heater zones; and a switching control module for controlling the operation of the switching module, wherein different portions of the wafer fixed to the electrostatic chuck are independently heated by each miniature multi-heater zone.

[0012] According to another preferred embodiment of the invention, it further includes: an AC heater region disposed on a ceramic layer formed above the micro multi-heater region, wherein there are 2 to 50 AC heater regions and the operation is controlled by each semiconductor switch.

[0013] According to another preferred embodiment of the invention, the micro multi-heater region is disposed on the micro multi-region plate.

[0014] According to another preferred embodiment of the present invention, a micro multi-zone plate is disposed inside a heating adjustment zone formed on a metal material operating body.

[0015] According to another preferred embodiment of the invention, it further includes: a temperature sensor for detecting the temperature of each AC heater zone.

[0016] According to another preferred embodiment of the present invention, the miniature multi-region board is provided with an optical communication circuit module, a drive module, and a power supply circuit module for transmitting control information of each heater region.

[0017] According to another preferred embodiment of the invention, the miniature multi-heater region is provided with 50 to 500 units.

[0018] According to another preferred embodiment of the invention, the operating body is made of aluminum.

[0019] According to another preferred embodiment of the invention, it further includes: cooling lines formed in the operating body.

[0020] According to another preferred embodiment of the invention, the interior of the heating regulation area (RA) is filled with thermal paste.

[0021] (III) Beneficial Effects

[0022] The electrostatic chuck according to the present invention, with its multiple heating structures, compensates for temperature deviations that may occur during wafer heating, ensuring temperature uniformity across the entire wafer surface to guarantee process uniformity and thus improve process yield. In progressively miniaturized and height-advanced semiconductor processes, the electrostatic chuck according to the present invention can compensate for previous process results in subsequent processes based on those results. For example, when previous process results are high or low in a portion of a 300mm wafer, compensation can be made in subsequent processes. Therefore, process uniformity is ensured and yield is improved, thereby increasing productivity. For known etching apparatuses, the 300mm circular cross-sectional area of ​​the electrostatic chuck limits the number of heater regions. This is due to the structural limitation caused by the need to mount power terminals and heating elements in each heater, restricting the arrangement of localized heating regions. The electrostatic chuck according to the present invention solves this space limitation, allowing for the arrangement of various numbers or shapes of localized heating regions as needed. The electrostatic chuck according to the present invention encompasses various forms of electrostatic chucks applicable to semiconductor processes, and the invention is not limited thereto. Attached Figure Description

[0023] Figure 1 An embodiment of a miniature multi-heater region applied to an electrostatic chuck with a multi-heater region structure according to the present invention is shown.

[0024] Figure 2 An embodiment of multiple AC heater regions formed in the ceramic layer of an electrostatic chuck according to the invention is shown.

[0025] Figure 3 An embodiment of the electrostatic chuck according to the invention is shown, viewed from above and below.

[0026] Figure 4 An embodiment of an electrostatic chuck with a plurality of heating zones according to the present invention is shown.

[0027] Figure 5 An embodiment of the cross-sectional structure of the electrostatic chuck according to the present invention is shown.

[0028] Figure 6 An embodiment of a method for operating a miniature multi-region electrostatic chuck according to the present invention is shown.

[0029] Explanation of reference numerals in the attached figures

[0030] 11_1 to 11_N: Miniature multi-heater area; 13: Switching module

[0031] 14_1 to 14_N: Individual switching devices; 15: Switch control module

[0032] 21_1 to 21_L: AC heater area; 22_1 to 22_L: semiconductor switch

[0033] 31: Wafer fixing part; 32: Edge part

[0034] 41: Operating unit; 43: Miniature multi-zone board

[0035] 44: Optical communication circuit module 45: Driver module

[0036] 46: Power supply circuit module 47: AC heater controller

[0037] 48: AC power supply source; 51: Heating area Detailed Implementation

[0038] The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. However, the embodiments are only for the purpose of clearly understanding the present invention, and the present invention is not limited thereto. In the following description, components with the same reference numerals in different figures have similar functions, and therefore will not be described again unless necessary for understanding the present invention. Although well-known components are described briefly or omitted, they should not be construed as being excluded from the embodiments of the present invention.

[0039] Figure 1 An embodiment of a miniature multi-heater region applied to an electrostatic chuck with a multi-heater region structure according to the present invention is shown.

[0040] Reference Figure 1 The electrostatic chuck with a multiple heating zone structure includes: multiple miniature multi-heater zones 11_1 to 11_N, each of which can be individually heated and controlled by a heating element; a switching module 13, including individual switching devices 14_1 to 14_N connected to each of the multiple miniature multi-heater zones 11_1 to 11_N; and a switching control module 15, which controls the operation of the switching module 13, wherein different portions of the wafer fixed to the electrostatic chuck are independently heated by each miniature multi-heater zone 11_1 to 11_N.

[0041] Miniature multi-heater regions 11_1 to 11_N can be formed in portions corresponding to the wafer to heat the wafer, for example, they can be formed inside a ceramic layer formed on top of an electrostatic chuck, but preferably they can be formed in heating devices independently formed below the ceramic layer. When formed below the ceramic layer, they can have the function of compensating for local temperature deviations caused by heating by heaters formed in the ceramic layer. Predetermined portions of the wafer can be locally heated by the miniature multi-heater regions 11_1 to 11_N, and the miniature multi-heater regions 11_1 to 11_N can be formed based on the shape of the wafer. The entire area of ​​the wafer can be divided into multiple heating regions, and the miniature multi-heater regions 11_1 to 11_N can be formed at appropriate locations where each of the divided heating regions can be heated. Each miniature multi-heater region 11_1 to 11_N formed as described above can have, for example, linear heating characteristics, for example, it can have linear heating characteristics where the temperature changes linearly in proportion to the applied power within a temperature range of 0 to 150°C. Each heater region 11_1 to 11_N may include a heating device such as an LED element, diode, thermoelectric element, or resistor, and the heating device can be heated by AC power, but preferably by a power supply capable of applying DC power from 0 to 24V. Each heater region 11_1 to 11_N may be connected to individual switching devices 14_1 to 14_N, and heating or stopping can be performed by turning on or off the individual switching devices 14_1 to 14_N. Each heater region 11_1 to 11_N may include: a heating body 111 made of a material capable of generating and transferring heat; and a pair of electrodes 112a, 112b formed on the heating body 111 to generate heat by applying electricity to the heating body 111. The pair of electrodes 112a, 112b may be electrically connected to the individual switching devices 14_1 to 14_N. Additionally, electricity can be applied to each heating body 111 to generate heat by turning on or off the individual switching devices 14_1 to 14_N. Individual switching devices 14_1 to 14_N can be installed in the switch module 13. The switch module 13 can store the states of multiple individual switching devices 14_1 to 14_N, and can maintain the state of each individual switching device 14_1 to 14_N or switch the on / off state of each individual switching device 14_1 to 14_N. Each individual switching device 14_1 to 14_N can be operated by the operation signal of the switch control module 15. Specifically, the on or off signal of the individual switching device 14_1 to 14_N from the switch control module 15 can be transmitted to the switch module 13, and the switch module 13 can maintain the state of each individual switching device 14_1 to 14_N or switch the on / off state of each individual switching device 14_1 to 14_N according to the transmitted signal.The number of heater zones 11_1 to 11_N can vary depending on the structure of the electrostatic chuck or wafer, for example, it can be 10 to 500, but is not limited thereto.

[0042] Reference Figure 1 In the embodiment shown on the left, one electrode 112a of each heater region 11_1 to 11_N can be connected to each individual switching device 14_1 to 14_N via each connecting line 12a to 12n. Additionally, another electrode 112b of each heater region 11_1 to 11_N can be connected to the ground electrode 16 via the grounding line GW. (Refer to...) Figure 1 In the embodiment shown on the right, each heater region 17_1 to 17_M can be connected to each column switch 18_1 to 18_L of the first switch group via each column line CL_1 to CL_L of the first connecting line group. Each row switch 19_1 to 19_K can be connected via each row line RL_1 to RL_K of the second connecting line group. Furthermore, the column switches 18_1 to 18_L and the row switches 19_1 to 19_K can operate in conjunction with each other to individually heat each heater region 17_1 to 17_M. The heater regions 17_1 to 17_M can function the same as or similarly to the heater regions 11_1 to 11_N. Individual control of each miniature heater region 11_1 to 11_N can be achieved through various methods, and is not limited to the embodiment shown.

[0043] Figure 2 An embodiment of multiple AC heater regions formed in the ceramic layer of an electrostatic chuck according to the invention is shown.

[0044] Reference Figure 2Multiple AC heater regions 21_1 to 21_18 can be formed inside the ceramic layer CS, and these AC heater regions 21_1 to 21_18 can correspond to the aforementioned micro heater regions 11_1 to 11_N. For example, the AC heater regions 21_1 to 21_18 can be applied to a 300mm wafer and can be operated by AC power. Each AC heater region 21_1 to 21_18 can be provided with a heating element, power terminals, and temperature sensors such as thermocouples. Each AC heater region 21_1 to 21_18 has a connection port, so that the operation of the AC heater regions 21_1 to 21_18 can be adjusted by individual semiconductor switches 22_1 to 22_18, such as thyristors, which act as individual switching devices. Individual semiconductor switches 22_1 to 22_18 can be connected to AC heater regions 21_1 to 21_18 via connecting lines 23a and 23b. Each AC heater region 21_1 to 21_18, together with the individual semiconductor switches 22_1 to 22_18, forms an independent heating circuit and can be connected to an AC heater power supply. The AC heater regions 21_1 to 21_18 can be interconnected and consist of 18 divided regions, but the number of AC heater regions 21_1 to 21_18 can vary, for example, from 2 to 50, but is not limited thereto. In the illustrated embodiment, 18 heater regions 21_1 to 21_18 can be connected to 18 individual semiconductor switches 22_1 to 22_18. The individual switches 22_1 to 22_18 can operate independently, thus allowing the AC heater regions 21_1 to 21_18 to be heated independently.

[0045] Below the AC heater zones 21_1 to 21_18, there may be... Figure 1 The micro-multi-heater region described herein can operate independently of AC heater regions 21_1 to 21_18. For example, the number of micro-multi-heater regions can range from 50 to 500, depending on the shape of the wafer or the structure of the electrostatic chuck, but is not limited thereto. The micro-multi-heater region can be located below the ceramic layer and can have the same or similar operating structure as AC heater regions 21_1 to 21_18. Furthermore, the micro-multi-heater region can have the function of compensating for temperature deviations generated in the electrostatic chuck or wafer heated by AC heater regions 21_1 to 21_18. First, the electrostatic chuck or wafer can be heated by AC heater regions 21_1 to 21_18 or other heating devices; second, heat compensation can be performed through the operation of the micro-multi-heater region. The above process will be described below.

[0046] Reference Figure 2On the right side, the process of adjusting the heating of the electrostatic chuck includes the following steps: forming AC heater regions 21_1 to 21_18 in an insulating layer or ceramic layer (P21); forming a micro multi-heater region below the ceramic layer (P22); forming a drive device for driving the AC heater regions 21_1 to 21_18 and the micro multi-heater region (P23); forming an open loop or independent loop connecting each AC heater region 21_1 to 21_18 and a semiconductor individual switch, and connecting each micro multi-heater region and the individual heater switch (P24); generating heating characteristic data for each heater region (P25); setting up a communication device that performs optical communication, such as data communication, between the control device for control operation and the switch control module or status detection device (P26); and individually controlling each AC heater region 21_1 to 21_18 or the micro multi-heater region (P27). The AC heater regions 21_1 to 21_18 or the micro multi-heater region can be formed based on the entire area of ​​the wafer during the process, and different heater regions can have the same or different areas or shapes. When the heater zones are configured as described above (P21, P22), a heat source for heating each heater zone can be provided, and a drive device for operating the heat source can be formed (P23). The heat source can be various electronic components or parts that can generate heat through power supply, such as LED elements, diodes, thermoelectric elements, or resistors, and the drive device can operate a switch to heat each heater zone. The switch can be operated by a switch control module, which can be operated by an external control module. For example, such as... Figure 2 As shown, the switches can be semiconductor switches such as silicon controlled rectifier (SCR) elements, but are not limited to them. Each switch can be formed as an open-loop structure or an independent loop structure (P24), and an operation signal can be transmitted to the switch to enable independent operation. The heater regions can have different shapes and can be formed in different locations. Therefore, heating characteristic data based on the shape or location of each heater region can be generated (P25). The switches for operating each heater region need to be operated during the process, and bias RF (radio frequency) power can be applied to the electrostatic chuck during the process. Due to the application of this bias RF power, RF noise may be generated, so a communication method that does not generate RF noise is required, for example, optical communication such as fiber optic communication can be used (P26). The operation signal can be transmitted to the switch control module via optical communication to control the operation of each switch. The operation of the heater regions can be implemented by various methods, not limited to the proposed embodiment. An embodiment of an electrostatic chuck controlled by this method is described below.

[0047] Figure 3 An embodiment of the electrostatic chuck according to the invention is shown, viewed from above and below.

[0048] Figure 3 The left and right sides show the shape viewed from above and below the electrostatic chuck, respectively. The interior of the ceramic layer disposed in the wafer-fixing region can be divided into a two-dimensional matrix shape, and each divided region can be a region formed in the AC heater regions 21_1 to 21_L. The entire wafer-fixing region can correspond to the AC heater regions 21_1 to 21_L. A plurality of fastening holes 33_1 to 33_K can be formed along the edge portion 32 of the wafer-fixing region, and the AC heater regions 21_1 to 21_L can be formed in the wafer-fixing portion 31. (See reference...) Figure 3 On the right side, guide holes 38_1 to 38_M, such as pin holes for setting lifting pins or gas channels, can be formed in the main body 34 of the electrostatic chuck, and connection holes 35_1 to 35_N can be formed to electrically connect each AC heater region 21_1 to 21_L to a power supply device or control device. Power can be supplied to the heating elements provided in each AC heater region 21_1 to 21_L through the lines provided in the connection holes 35_1 to 35_N, or information about each AC heater region 21_1 to 21_L can be obtained. For this power supply or information acquisition, an operating body 34 can be formed below the ceramic layer, and a miniature multi-region plate 37 can be provided in the operating body 34. Furthermore, miniature multi-heater regions 11_1 to 11_N can be provided on the inner side of the multi-region plate 37. Although the miniature multi-heater regions 11_1 to 11_N and the AC heater regions 21_1 to 21_L are shown with solid lines respectively, it should be understood that they are all located inside. The following is a detailed description of the configuration of each component of an electrostatic chuck with this structure.

[0049] Figure 4 An embodiment of an electrostatic chuck with a plurality of heating zones according to the present invention is shown.

[0050] Reference Figure 4 The miniature multi-heater regions 11_1 to 11_N can be provided in the miniature multi-region plate 43. In addition, the miniature multi-region plate 43 is provided inside the heating adjustment region RA formed in the operating body 41 of the metal material.

[0051] AC heater regions 21_1 to 21_L can be disposed within a ceramic layer 42 formed on the upper surface of the metal operating body 41. A heating adjustment region RA can be disposed on the upper part of the operating body 41, and a miniature multi-region plate 43 can be disposed within the heating adjustment region RA. Furthermore, miniature multi-heater regions 11_1 to 11_N can be disposed on the miniature multi-region plate 43. The operating body 41 can be cylindrical in shape, for example, it can be made of a metal material such as aluminum. Cooling lines CL can be formed below the operating body 41, and the heating adjustment region RA can be formed on the upper part of the operating body 41. For example, the heating adjustment region RA can be formed by forming a groove or receiving space on the upper part of the operating body 41. The miniature multi-region plate 43 can be disposed in the heating adjustment region RA, and the miniature multi-region plate 43 can have an electronic board structure such as a printed circuit board. Miniature multi-heater regions 11_1 to 11_N can be disposed separately from each other on the heating plate, and LED elements, diodes, or thermoelectric elements can be disposed in each miniature multi-heater region 11_1 to 11_N. The aforementioned individual switching devices can be connected to each of the miniature multi-heater regions 11_1 to 11_N. The heating regulation region RA can be formed as a structure protruding upwards from the heating body 41 via a partition wall 411, and it may include a groove portion flowing into the interior of the operating body 41. The miniature multi-region plate 43 can be detachably disposed from the bottom surface of the heating regulation region RA, and an optical communication circuit module 44 can be disposed on the lower surface of the miniature multi-region plate 43. The optical communication circuit module 44 can be connected to a control module 441, such as a Programmable Machine Controller (PMC) computer. Guide tubes CP1 and CP2 can be inserted into and fixed in guide holes, such as via holes, extending from the interior of the heating regulation region RA toward the exterior of the operating body 41. The optical communication circuit module 44 and the control module 441 can be connected to each other to enable data communication via connection lines CA1 and CA2, such as fiber optic cables, guided through the guide tubes CP1 and CP2 to the interior of the heating regulation region RA. A drive module 45 can be disposed below the miniature multi-zone board 43, and the drive module 45 can be connected to the optical communication circuit module 44 or the power supply circuit module 46 for electrical signal communication or data communication. Power can be applied to each heater zone 11_1 to 11_N through the power supply circuit module 46 disposed below the miniature multi-zone board 43. The power supply circuit module 46 can be connected to an external power source and can be operated to apply, for example, 5 to 24V DC power to each heater zone 11_1 to 11_N according to the operation signal transmitted from the drive module 45. Connecting pipes CP3 and CP4 can be inserted and fixed to the operating body 41, and the supply cable can extend through the connecting pipes CP3 and CP4 into the interior of the adjustment zone RA.The power supply circuit module 46 and the external power supply device 461 can be electrically connected to each other via a supply cable. For example, 5 to 24V DC power can be supplied via the external power supply device 461. The interior of the regulating area RA can be filled with a thermally conductive insulating material, for example, thermally conductive thermal paste. Heat generated during the operation of the micro multi-area board 43, the optical communication circuit module 44, the drive module 45, and the power supply circuit module 46 can be transferred to the operating body 41 through the thermal paste layer and cooled by the cooling fluid flowing along the cooling line CL. The upper part of the heating regulating area RA can be closed with a cover, for example, by a permanent connection such as soldering or tin soldering or a closed, detachable fixing method. The cover can be formed with multiple connection holes for connection to an external operating device. A ceramic layer 42 can be bonded to the upper surface of the heating regulating area RA having the structure described above. The ceramic layer 42 may have a DC layer 421 for fixing the wafer, and the DC layer 421 may be connected to a chucking power supply 49, through which a DC voltage of 500 to 3000V can be applied. The DC layer 421 may have a monopolar or bipolar structure. Temperature sensors may be disposed in the AC heater regions 21_1 to 21_L disposed in the ceramic layer 42, and the temperature sensors may be optical temperature detection sensors such as infrared thermocouples. At least one temperature sensor may be disposed inside the ceramic layer 42, preferably in each AC heater region 21_1 to 21_L. An AC heater controller 47 and an AC power supply 48 may be connected to each AC heater region 21_1 to 21_L, and AC power may be supplied to the AC heater regions 21_1 to 21_L based on the information transmitted by the temperature sensors. As described above, the heating of each AC heater region 21_1 to 21_L can be controlled individually. The temperature and uniformity of the ceramic layer 42 or the electrostatic chuck can be determined by a control module 441, such as a computer, and the AC heater regions 21_1 to 21_L can be heated accordingly. During heating, the temperature of the wafer or electrostatic chuck during the process can be detected by a temperature sensor and transmitted to the control module 441 or the AC heater controller 47, thereby enabling the detection of the wafer or electrostatic chuck temperature. If temperature deviations occur at different locations of the wafer or electrostatic chuck during the process, the micro multi-heater regions 11_1 to 11_N can be heated. Based on a pre-generated control algorithm, the electrical values ​​to be applied to the micro multi-heater regions 11_1 to 11_N are transmitted optically to the micro multi-area board 43 via an optical communication circuit module 44.The optical communication circuit module 44 converts the control signal into an electrical signal and transmits it to the drive module 45. The drive module 45 can adjust the operation of individual switching devices according to the electrical signal to control the power applied to the heating element, thereby adjusting the temperature of each heater region 11_1 to 11_N. The control module 441 can determine the overall temperature of the electrostatic chuck and transmit it to the AC heater controller 47, and the AC heater controller 47 can adjust the operation of the AC power supply 48 to adjust the overall temperature of the AC heater regions 21_1 to 21_L. As described above, in the electrostatic chuck according to the invention, the overall temperature control is adjusted by the AC heater regions 21_1 to 21_L, and the results that may occur with temperature adjustment can be compensated by the miniature multi-heater regions 11_1 to 11_N. Specifically, the temperature and uniformity of the electrostatic chuck can be set by the control module 441, and according to the control algorithm, the power value to be applied to each miniature multi-heater region 11_1 to 11_N is transmitted to the miniature multi-region board 43 via optical communication through the optical communication circuit module 44. The miniature multi-area board 43 is equipped with an optical communication circuit module 44 to convert control signals into electrical signals and transmit them to the drive module 45 to operate the power supply circuit module 46, thereby heating each miniature multi-heater region 11_1 to 11_N. The overall temperature of the electrostatic chuck is determined by the control module 441 and transmitted to the AC heater controller 47, which transmits the control signal to the AC power supply 48 through a PID control algorithm, thereby heating, for example, the AC heater regions 21_1 to 21_L divided into 4 to 38 regions. Feedback temperature sensors, such as optical thermocouples, can be installed in each AC heater region 21_1 to 21_L to transmit the temperature of each AC heater region 21_1 to 21_L to the AC heater controller 47. In the process described above, local temperature compensation can be performed as needed by heating the miniature multi-heater regions 11_1 to 11_N, thereby ensuring the overall temperature uniformity of the wafer. In semiconductor processes such as etching, an RF power module may apply bias RF power to the electrostatic chuck. The electrostatic chuck according to the invention can achieve heating control or temperature control for each heater region 11_1 to 11_N without being affected by the bias RF power as described above.

[0052] Figure 5 An embodiment of the cross-sectional structure of the electrostatic chuck according to the present invention is shown.

[0053] Reference Figure 5A cooling zone 56 can be formed below the operating body 41, and the cooling zone 56 has multiple cooling pipelines CL with a single-zone or dual-zone structure. A heating zone 51 for regulating wafer temperature can be formed above the heating adjustment zone CA. A micro multi-zone plate 43 can be disposed inside the adjustment zone CA. Fastening holes 52_1 to 52_K can be formed in the edge region 55 of the cylindrical operating body 41, and multiple guide tubes 57 connecting the inside and outside of the adjustment zone CA can be formed in the operating body 41. Additionally, an RF electrode 58 for applying bias RF power can be formed at the center of the operating body 41. Temperature uniformity can be ensured by using heating control in the AC heater region or by localized or overall heating in the multiple heating zones HA_1 to HA_K of the wafer W, provided by the micro multi-heater regions 11_1 to 11_N. Figure 5 As shown below, the heating regions HA_1 to HA_K of wafer W can be formed as a two-dimensional matrix structure. Alternatively, the heating regions HA_1 to HA_K of wafer W can be formed by creating circumferential heating bands SA_1 to SA_L relative to each other based on a circle, and dividing each heating band SA_1 to SA_L into at least one region. Based on this heating structure of the wafer, the geometry of the AC heater region or the micro multi-heater regions 11_1 to 11_M can be appropriately formed. Figure 5 As shown below, an optical communication circuit module 44, a drive module 45, or a power supply circuit module 46 may be appropriately provided on the miniature multi-area board 43. Various devices for heating control or information detection of the heater areas 11_1 to 11_N may also be provided, but the invention is not limited thereto.

[0054] Figure 6 An embodiment of a method for operating a miniature multi-region electrostatic chuck according to the present invention is shown.

[0055] Reference Figure 6 The micro multi-region operation method includes the following steps: forming multiple micro multi-heater regions corresponding to the wafer size (P61); setting up a heat source for heating the multiple micro multi-heater regions and a drive module for driving each heater region (P62); setting up an optical communication circuit module for detecting the operation and status of each heater region, and forming a separate control loop for operating the heating element set in each heater region (P63); generating temperature characteristic data for each heater region; and adjusting the heating status of each heater region through the control module (P65).

[0056] For example, a miniature multi-heater area can be formed within an adjustment area created by an operating body made of aluminum (P61). A heat source and drive module can be housed within the adjustment area on a miniature multi-area board (P62), and an optical communication circuit module for communication settings can also be housed on the miniature multi-area board (P63). Each heater area can be heated by LEDs, diodes, thermoelectric elements, or resistance wire patterns, and temperature characteristic data of the heater area based on power supply can be generated (P64). For example, the temperature of the heater area can vary linearly according to power supply, but is not limited thereto. For example, each heater area can be controlled by adjusting the opening or closing of individual switching devices (P65), but is not limited thereto.

[0057] The present invention has been described in detail above with reference to the illustrated embodiments. However, those skilled in the art can make various modifications and variations of the invention by referring to the illustrated embodiments without departing from the scope of the technical concept of the invention. The present invention is not limited to such modifications and variations, but is limited to the claims.

Claims

1. An electrostatic chuck with a multi-heating zone structure, characterized in that, include: Multiple miniature multi-heater zones (11_1 to 11_N), each of which is individually heated and controlled by a heating element; The switching module (13) includes individual switching devices (14_1 to 14_N) connected to each of the multiple miniature multi-heater regions (11_1 to 11_N); and The switch control module (15) controls the operation of the switch module (13). Different portions of the wafer, fixed to the electrostatic chuck, are independently heated by each miniature multi-heater region (11_1 to 11_N). The electrostatic chuck further includes AC heater regions (21_1 to 21_L) disposed within a ceramic layer (42) formed above the micro multi-heater regions (11_1 to 11_N). The upper part of the operating body (41), made of aluminum and having cooling pipes (CL) formed inside, has a groove or receiving space. A micro multi-area plate (43) is separated from the bottom surface of the heating adjustment area (RA), which is formed as a structure protruding above the operating body (41) through a partition wall (411). The micro multi-heater regions (11_1 to 11_N) are disposed on the upper surface of the micro multi-region plate (43), and an optical communication circuit module (44), a drive module (45), and a power supply circuit module (46) for transmitting control information of each multi-heater region (11_1 to 11_N) are disposed on the lower surface of the micro multi-region plate (43).

2. The electrostatic chuck with a plurality of heating zones according to claim 1, characterized in that, The AC heater areas (21_1 to 21_L) are provided with 2 to 50 units, and operation is controlled by each semiconductor switch (22_1 to 22_L).

3. The electrostatic chuck with a plurality of heating zones according to claim 1, further comprising: Temperature sensors are used to detect the temperature of each AC heater zone (21_1 to 21_L).

4. The electrostatic chuck with a plurality of heating zones according to claim 1, characterized in that, The micro multi-heater regions (11_1 to 11_N) are provided with 50 to 500 units.

5. The electrostatic chuck with a plurality of heating zones according to claim 1, characterized in that, The interior of the heating adjustment area (RA) is filled with hot glue.

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