Monocrystalline epitaxial thin film laser pulse plating device and preparation method

Abstract

The application discloses a single-crystal epitaxial thin film laser pulse coating device and a preparation method. The single-crystal epitaxial thin film laser pulse coating device comprises a first platform, a first driving mechanism, a second platform, a laser source and a baffle. The first driving mechanism drives the first platform to rotate. The baffle is located between the first platform and the second platform and has a through hole for the central region of a plume to pass through. The preparation method is performed by using the coating device. The baffle is only used for the central region of the plume to pass through. The atomic energy of the central region of the plume is high and has the same orientation, so that the thin film on the substrate can be epitaxially grown in a single orientation. By changing the relative position of the through hole and the substrate, the deposition region of the plume on the substrate can be changed, so that a plurality of continuously distributed coating areas are formed on the surface of the substrate, thereby forming a large-area single-crystal epitaxial thin film on the substrate.

Description

Technical Field

[0001] This invention relates to the field of thin film deposition technology, and in particular to a laser pulse deposition apparatus and method for single-crystal epitaxial thin film. Background Technology

[0002] Pulsed laser deposition (PLD) is a thin film fabrication method that focuses a laser beam onto a target material, causing the material on the target surface to evaporate instantaneously under the bombardment of the high-energy pulsed laser, transforming it into a plasma plume containing target material components. This plume then deposits onto a substrate to form a thin film. Pulsed laser deposition has no restrictions on the composition of the target material and can deposit thin films of various types, even high-melting-point materials. However, due to the high energy of the laser, the plasma plume exhibits strong directionality, with different atomic orientations in different regions of the plume. This prevents the epitaxial growth of thin films in a single orientation on the substrate, thus hindering the fabrication of large-area single-crystal epitaxial thin films. Summary of the Invention

[0003] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention proposes a laser pulse deposition apparatus for single-crystal epitaxial thin films, capable of preparing single-crystal epitaxial thin films.

[0004] The present invention also proposes a method for preparing single-crystal epitaxial thin films using the above-described single-crystal epitaxial thin film laser pulse coating apparatus.

[0005] A single-crystal epitaxial thin film laser pulse coating apparatus according to a first aspect of the present invention includes:

[0006] The first platform is used to load the substrate;

[0007] A first drive mechanism is connected to the first platform and is used to drive the first platform to rotate;

[0008] The second platform is used to load the target material, and the first platform and the second platform are arranged opposite to each other.

[0009] A laser source is used to emit a laser beam toward the target material to form a plume on the surface of the target material;

[0010] A baffle, located between the first platform and the second platform, has a through-hole for the central region of the feather to pass through and deposit on the surface of the substrate to form an annular coating area on the surface of the substrate.

[0011] The relative position of the through-hole through which the feather passes and the substrate can be changed to form a plurality of continuously distributed coating areas on the surface of the substrate.

[0012] The single-crystal epitaxial thin film laser pulse coating apparatus according to embodiments of the present invention has at least the following beneficial effects:

[0013] In this invention, a baffle is set to block the plume, allowing only the central region of the plume to pass through. This ensures that the film deposited on the substrate is composed entirely of atoms from the central region of the plume. Since the atoms in the central region of the plume have higher energy and the same orientation, the film on the substrate can be epitaxially grown with a single orientation. By changing the relative position of the through-hole and the substrate, the deposition area of ​​the plume on the substrate can be changed, thereby forming multiple continuously distributed coating areas on the surface of the substrate, thus forming a large area of ​​single-crystal epitaxial film on the substrate.

[0014] According to some embodiments of the present invention, the single-crystal epitaxial thin film laser pulse coating apparatus further includes a second driving mechanism, the second driving mechanism including a first driving member, the first driving member being connected to the baffle, the first driving member being used to drive the baffle to move radially along the first platform to change the relative position of the through hole and the substrate.

[0015] According to some embodiments of the present invention, the single-crystal epitaxial thin film laser pulse coating apparatus further includes an adjustment plate, which is stacked with the baffle. The adjustment plate is used to block the through-hole, and the adjustment plate is movable relative to the baffle to change the blocking range of the through-hole.

[0016] According to some embodiments of the present invention, the adjusting plate has a blocking portion for blocking the through hole, and the edge of the blocking portion is recessed in an arc shape.

[0017] According to some embodiments of the present invention, the single-crystal epitaxial thin film laser pulse coating apparatus further includes an adjustment plate, the adjustment plate being stacked with a baffle, the baffle having a plurality of through holes, the through holes being radially spaced along the baffle, the adjustment plate having a through hole, and the adjustment plate being movable relative to the baffle to expose one of the through holes from the through hole.

[0018] According to some embodiments of the present invention, the laser source is capable of emitting multiple laser beams, and the baffle is provided with multiple groups of holes, adjacent groups of holes being radially distributed along the first platform. Each group of holes is provided with multiple through holes, and the multiple through holes are evenly distributed on the same circumference. Each through hole in the group of holes can allow a laser beam to pass through the central region of the plume excited on the target surface. The single-crystal epitaxial thin film laser pulse coating device further includes an adjustment plate, which is stacked with the baffle. The adjustment plate is movable relative to the baffle to expose one of the through holes in the group of holes.

[0019] According to some embodiments of the present invention, the single-crystal epitaxial thin film laser pulse coating apparatus further includes a second driving mechanism, the second driving mechanism including a second driving member, the second driving member being connected to the baffle, the second driving member being used to drive the baffle to move along the arrangement direction of the first platform and the second platform, so as to change the distance between the baffle and the second platform.

[0020] According to some embodiments of the present invention, the second platform includes a base, a target chamber, and a plurality of platforms for loading the substrate. The plurality of platforms are mounted on the base. The target chamber has a notch. At least a portion of the base and at least one of the platforms are housed inside the target chamber. The base is movable relative to the target chamber to expose one of the platforms from the notch.

[0021] According to some embodiments of the present invention, the single-crystal epitaxial thin film laser pulse coating apparatus further includes a lens group located in front of the laser source. The lens group is used to adjust the emission path of the laser beam to change the incident position of the laser beam on the target.

[0022] The method for preparing a single-crystal epitaxial thin film according to a second aspect embodiment of the present invention is performed using a single-crystal epitaxial thin film laser pulse deposition apparatus according to the first aspect embodiment, and includes the following steps:

[0023] Adjust the position of the through hole and / or the incident position of the laser beam on the target material so that the central region of the plume passes through the through hole;

[0024] The laser source continuously emits a laser beam toward the target material, and at the same time the first driving mechanism drives the first platform to rotate, so as to form a coating area on the surface of the substrate.

[0025] The relative position of the through-hole and the substrate is changed to form a plurality of continuously distributed coating areas on the surface of the substrate.

[0026] According to some embodiments of the present invention, after each of the coating areas is formed, the incident position of the laser beam on the target surface and the relative position of the through hole in the radial direction of the first platform with respect to the substrate are changed.

[0027] According to some embodiments of the present invention, the following steps are included:

[0028] The coating area is deposited onto the substrate repeatedly to deposit a single-crystal epitaxial thin film on the surface of the substrate.

[0029] Replace the target material;

[0030] The coating area is deposited again on the substrate, and a single-crystal epitaxial thin film is deposited on the surface of the substrate.

[0031] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0032] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0033] Figure 1 This is a schematic diagram of the structure of one embodiment of the single-crystal epitaxial thin film laser pulse coating device of the present invention;

[0034] Figure 2 for Figure 1 A schematic diagram of one embodiment of the middle baffle;

[0035] Figure 3 This is a schematic diagram of the coating area on the substrate;

[0036] Figure 4 This is a schematic diagram showing the distribution of multiple coating areas on the substrate.

[0037] Figure 5 This is a schematic diagram of the adjustment plate blocking the through hole in one embodiment;

[0038] Figure 6 This is a schematic diagram of the adjustment plate blocking the through hole in another embodiment;

[0039] Figure 7 This is a schematic diagram of the adjustment plate blocking the through hole in other embodiments.

[0040] Figure label:

[0041] First platform 100; first drive mechanism 200; second platform 300, base 310, target chamber 320, stage 330; laser source 400; baffle 500, through hole 510, hole group 520; substrate 600, coating area 610; target 700; second drive mechanism 800, adapter 810; adjustment plate 900, shielding part 910, through hole 920. Detailed Implementation

[0042] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0043] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0044] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0045] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0046] In the description of this invention, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0047] An embodiment of the present invention provides a single-crystal epitaxial thin film laser pulse deposition apparatus (hereinafter referred to as the deposition apparatus) for depositing a thin film epitaxially grown in a single orientation on a substrate. (See reference...) Figure 1 The coating apparatus includes a first platform 100, a first driving mechanism 200, a second platform 300, a laser source 400, and a baffle 500. The first platform 100 is used to load a substrate 600, and the second platform 300 is used to load a target 700. The first platform 100 and the second platform 300 are arranged opposite to each other, so that the substrate 600 and the target 700 are opposite to each other, so that the plume generated from the surface of the target 700 is deposited onto the substrate 600. The laser source 400 is used to emit a laser beam towards the target 700. The laser beam bombards the target 700, exciting the material on the surface of the target 700 and forming plumes. Figure 1 and Figure 2A baffle 500 is located between the first platform 100 and the second platform 300. After the substrate 600 is mounted on the first platform 100 and the target 700 is mounted on the second platform 300, the baffle 500 is positioned between the substrate 600 and the target 700. The baffle 500 has a through-hole 510, through which the excitation plume on the surface of the target 700 can pass and deposit onto the surface of the substrate 600. The first drive mechanism 200 is connected to the first platform 100 and is used to drive the first platform 100 to rotate. The substrate 600 can rotate synchronously with the first platform 100. When the laser source 400 emits a laser beam toward the target 700, the plume deposits onto the substrate 600 through the through-hole 510. As the substrate 600 continues to rotate, a ring-shaped coating area 610 is formed on the surface of the substrate 600 (e.g., ...). Figure 3 (As shown).

[0048] Because the atomic orientations differ in different regions of the plume, the film orientations of different regions vary when the plume is completely deposited on the surface of the substrate 600. The crystals grown on the substrate 600 cannot maintain the same crystal orientation as the substrate 600, preventing epitaxial growth of the material on the substrate 600 surface and preventing the formation of a single-crystal epitaxial film with a single orientation. In this embodiment of the invention, a baffle 500 is provided to block the plume, allowing only the central region of the plume to pass through. This ensures that the film deposited on the substrate 600 is composed entirely of atoms from the central region of the plume. Because the atoms in the central region of the plume have higher energy and the same orientation, the film on the substrate 600 can grow epitaxially with a single orientation, forming a single-crystal epitaxial film. Furthermore, the relative position of the through-hole 510 allowing the plume to pass through and the substrate 600 can be changed. After deposition in one of the coating areas 610, by changing the relative position of the through-hole 510 and the substrate 600, the deposition area of ​​the plume on the substrate 600 can be changed, thereby forming multiple continuously distributed coating areas 610 (e.g., ...) on the surface of the substrate 600. Figure 4 As shown in the figure, a single-crystal epitaxial film is deposited on the entire surface of the substrate 600.

[0049] It should be noted that before the coating process begins, parameters such as the temperature of the substrate 600, the energy of the laser beam emitted by the laser source 400, the shape and size of the laser beam spot, the distance between the target 700 and the substrate 600, the distance between the baffle 500 and the substrate 600, the size of the through hole 510, and the rotation speed of the first platform 100 can be adjusted to ensure that the central area of ​​the plume matches the through hole 510, and that the plume can be deposited on the substrate 600 to form an epitaxial film with uniform thickness and single orientation on the surface of the substrate 600.

[0050] As a specific embodiment for adjusting the relative position of the through-hole 510 and the substrate 600, a through-hole 510 is provided on the baffle 500. The coating apparatus also includes a second driving mechanism 800, which includes a first driving member connected to the baffle 500. The first driving member is used to drive the baffle 500 to move radially along the first platform 100. When the baffle 500 moves, the relative position of the through-hole 510 and the substrate 600 changes synchronously. Thus, after the deposition of one coating area 610 is completed, the baffle 500 is moved by the second driving mechanism 800, changing the relative position of the through-hole 510 and the substrate 600, so that the feather can be deposited in other areas of the substrate 600. The first platform 100 is rotated by the first driving mechanism 200, forming an annular coating area 610 in another area of ​​the substrate 600. After repeating this process multiple times, multiple continuously distributed coating areas 610 can be formed on the surface of the substrate 600.

[0051] Furthermore, the first driving component can be a servo motor, a ball screw, a telescopic structure, etc. For example, when the first driving component is a ball screw, the nut is screwed onto the screw. The nut is guided and restricted by the guide rail, and can only move linearly along the guide rail. One end of the screw is driven to rotate by a motor or other rotary driving component. The nut is connected to the baffle 500. When the screw rotates, the nut drives the baffle 500 to move along the guide rail, thereby adjusting the relative position of the through hole 510 and the substrate 600. The rotation pitch of the nut relative to the screw is set in advance so that the distance of a single movement of the baffle 500 is exactly the distance between adjacent coating areas 610, to ensure the continuity between adjacent coating areas 610. Alternatively, the first driving component can be a telescopic structure, which includes a first rod and a second rod that can extend and retract relative to the first rod. The second rod is inserted into the first rod, and the baffle 500 is connected to the second rod. By moving the second rod relative to the first rod, the position of the baffle 500 is adjusted, thereby changing the relative position of the through hole 510 and the substrate 600.

[0052] The coating apparatus also includes a coating chamber. The first platform 100, the second platform 300, and the baffle 500 are all located inside the coating chamber. The laser source 400 is located outside the coating chamber, and the laser beam emitted by the laser source 400 enters the coating chamber through the optical window of the coating chamber. Based on the above, the second driving mechanism 800 also includes a connector 810. The connector 810 passes through the coating chamber, with one end inserted into the coating chamber and connected to the baffle 500, and the other end located outside the coating chamber and connected to the first driving component. The connector 810 isolates the first driving component from the internal environment of the coating chamber, preventing the first driving component from being contaminated, thereby improving the service life of the first driving component.

[0053] As a further improvement to the adjustment of the relative position of the through hole 510 and the substrate 600, such as Figure 5As shown, the coating apparatus also includes an adjusting plate 900, which is stacked with a baffle 500. The adjusting plate 900 is used to block the through-hole 510, and the adjusting plate 900 can move radially relative to the baffle 500 on the first platform 100 to change the blocking range of the adjusting plate 900 on the through-hole 510. By changing the position of the adjusting plate 900, the area of ​​the through-hole 510 that allows the plume to pass through can be adjusted so that the through-hole 510 on the baffle 500 can be used for plumes with different energies and central region sizes, and ensure that only the central region of the plume is allowed to pass through, so that a single-crystal epitaxial thin film with strict uniform orientation is formed on the surface of the substrate 600.

[0054] In addition, the size of the exposed area of ​​the through hole 510 is adjusted by setting the adjustment plate 900 to block the through hole 510. Only one through hole 510 needs to be set on the baffle 500, making the structure of the baffle 500 simpler and easier to process. In this way, the relative position of the through hole 510 and the substrate 600 is adjusted by driving the baffle 500 to move through the first driving mechanism 200, so that the center area of ​​the plume is aligned with the through hole 510. The size of the exposed area of ​​the through hole 510 is adjusted by moving the adjustment plate 900, so that the plume can pass through the through hole 510, and the through hole 510 only allows the center area of ​​the plume to pass through, so as to ensure the consistency of the thin film orientation on the surface of the substrate 600.

[0055] Furthermore, the plume formed by the excitation of the target material 700 is ellipsoidal. To ensure that the central region of the plume can pass through the through-hole 510, the shape of the through-hole 510 should conform to the shape of the central region of the plume, as shown in the reference. Figure 5 The through-hole 510 is circular, allowing the entire center of the plume to pass through. Furthermore, the adjusting plate 900 has a blocking portion 910 that blocks the through-hole 510. The blocking portion 910 is located on one side of the adjusting plate 900, and its edge is concave and arc-shaped. When the blocking portion 910 blocks the through-hole 510, the boundary of the exposed area of ​​the through-hole 510 and the edge of the blocking portion 910 together define the range through which the plume can pass. Since both the edge of the blocking portion 910 and the wall of the through-hole 510 are arc-shaped, the area defined by them has a high degree of shape matching with the central region of the plume. Therefore, it can effectively block the plume outside the central region from passing through the through-hole 510, ensuring the formation of a uniformly oriented epitaxial growth film on the substrate 600.

[0056] As another specific embodiment for adjusting the relative position of the through-hole 510 and the substrate 600, such as Figure 6As shown, the coating apparatus includes an adjusting plate 900, which is stacked with a baffle 500. The baffle 500 has multiple through holes 510, which are radially spaced along the baffle 500. The adjusting plate 900 has through holes 920, the diameter of which is not less than the diameter of the through holes 510. The through holes 920 allow the through holes 510 to be exposed. The adjusting plate 900 can move relative to the baffle 500. When the adjusting plate 900 moves, different through holes 510 can be exposed through the through holes 920. After the relative positions of the adjusting plate 900 and the baffle 500 are fixed, only one through hole 510 can be exposed in the through hole 920. Thus, by changing the position of the adjusting plate 900 relative to the baffle 500, different through holes 510 can be exposed, and the central region of the feather can pass through the through hole 510. Since multiple through holes 510 are distributed radially along the baffle 500, the feather passes through different through holes 510 in sequence. When the first platform 100 rotates, multiple continuous coating areas 610 can be formed on the substrate 600.

[0057] As another specific embodiment for adjusting the relative position of the through-hole 510 and the substrate 600, such as Figure 7 As shown, the laser source 400 can emit multiple laser beams. Multiple laser emitters can be set inside the laser source 400, or multiple sets of laser beams can be emitted from the same laser emitter. Multiple hole groups 520 are provided on the baffle 500. Adjacent hole groups 520 are distributed radially along the first platform 100. Multiple through holes 510 are provided in each hole group 520, and the multiple through holes 510 are evenly distributed on the same circumference. The number of laser sources 400 is the same as the number of through holes 510 in each hole group 520. The incident position of each laser beam on the surface of the target material 700 corresponds to the position of one through hole 510 in the hole group 520. Each through hole 510 in the hole group 520 can allow a laser beam to pass through the central region of the feather excited on the surface of the target material 700. The coating device also includes an adjustment plate 900, which is stacked with the baffle 500. The adjustment plate 900 can move relative to the baffle 500 to expose all the through holes 510 in one of the hole groups 520.

[0058] Therefore, during the coating process, all the through-holes 510 of one of the hole groups 520 allow the central region of the plume to pass through. After the deposition of one coating area 610 is completed, all the through-holes 510 in another hole group 520 are exposed by moving the adjustment plate 900. In this way, multiple continuous coating areas 610 can be formed on the surface of the substrate 600. Furthermore, during the coating process, all laser beams are emitted simultaneously and incident on different positions of the target 700. The plumes excited at different positions of the target 700 can be deposited onto the substrate 600 simultaneously through different through-holes 510. This arrangement reduces the impact of material energy attenuation on the coating uniformity when the target 700 is excited for a long time. On the other hand, the first platform 100 does not need to rotate one full turn to form an annular coating area 610 on the surface of the substrate 600, reducing the rotation angle of the first platform 100 and thus improving the coating efficiency.

[0059] It should be noted that in the embodiments described above where the relative positions of the through-hole 510 and the substrate 600 are adjusted, the adjusting plate 900 is stacked with the baffle 500, with the adjusting plate 900 located on the side of the baffle 500 facing the second platform 300, or on the side of the baffle 500 facing the first platform 100. In one embodiment, the adjusting plate 900 is positioned on the side of the baffle 500 facing the first platform 100 to reduce contamination of the adjusting plate 900 during the coating process and to reduce the frequency of subsequent maintenance of the adjusting plate 900.

[0060] In one embodiment, the second driving mechanism 800 further includes a second driving member connected to the baffle 500. The second driving member is used to drive the baffle 500 to move along the arrangement direction of the first platform 100 and the second platform 300 to change the distance between the baffle 500 and the second platform 300. As a result, the distance between the baffle 500 and the target 700 changes, ensuring that the central region of the feather excited on the surface of the target 700 can pass through the through hole 510 on the baffle 500, making the positioning adjustment of the central region of the feather and the through hole 510 more flexible.

[0061] Furthermore, both the first and second driving components are integrated within the second driving mechanism 800. For example, the second driving component is mounted on the first driving component, and the baffle 500 is mounted on the second driving component. The first driving component drives the second driving component to move radially along the first platform 100, and the baffle 500 can move synchronously with the second driving component, giving the baffle 500 two degrees of freedom: radial movement along the first platform 100 and movement along the direction in which the first platform 100 and the second platform 300 are arranged. Alternatively, the first driving component is mounted on the second driving component, and the baffle 500 is mounted on the first driving component. The second driving component drives the first driving component to move along the direction in which the first platform 100 and the second platform 300 are arranged, and the baffle 500 can move synchronously with the first driving component, giving the baffle 500 two degrees of freedom: radial movement along the first platform 100 and movement along the direction in which the first platform 100 and the second platform 300 are arranged.

[0062] Additionally, in one embodiment, reference is made to Figure 1 The second platform 300 includes a base 310, a target chamber 320, and multiple stages 330. The stages 330 are used to load the substrate 600. The multiple stages 330 are all mounted on the base 310. The target chamber 320 has a notch. At least a portion of the base 310 and at least one stage 330 are housed inside the target chamber 320. The base 310 is movable relative to the target chamber 320. While the base 310 is moving, it drives the stages 330 to move, so that one stage 330 is exposed from the notch. The laser source 400 excites the target 700 loaded on the stage 330. The target chamber 320 shields the target 700 on the other stages 330 to prevent the target 700 from being contaminated.

[0063] Specifically, the base 310 can rotate relative to the target chamber 320. Multiple stages 330 are arranged in a ring around the circumference of the base 310. When the base 310 rotates, different stages 330 can move to the notch. After the base 310 stops rotating, one stage 330 is exposed from the notch, and the target 700 mounted on this stage 330 is the target 700 to be excited in the current coating process. Alternatively, the base 310 can move relative to the target chamber 320, with multiple stages 330 arranged in a straight line along the direction of movement of the base 310. When the base 310 moves, different stages 330 can move to the notch. After the base 310 stops moving, one stage 330 is exposed from the notch.

[0064] In one embodiment, the coating apparatus further includes a lens assembly located in front of the laser source 400. The lens assembly is used to adjust the emission path of the laser beam, thereby changing the incident position of the laser beam on the target 700. This allows the laser beam to excite different areas of the target 700 and generate plumes at different positions on the target 700. By changing the emission path of the laser beam, different areas of the target 700 can be excited, ensuring effective utilization of the target 700 and maintaining the uniformity of the coating on the substrate 600. The lens assembly contains one or more lenses, and the laser beam emission path can be adjusted by changing the angle of the lenses.

[0065] The invention also provides a method for preparing single-crystal epitaxial thin films (hereinafter referred to as the preparation method), which is performed using the above-mentioned coating apparatus and includes the following steps:

[0066] The position of the through-hole 510 and / or the incident position of the laser beam on the target 700 are adjusted so that the central region of the plume passes through the through-hole 510. The position of the through-hole 510 can be changed by the first driving member driving the baffle 500 to move radially along the first platform 100, or by the second driving member driving the baffle 500 to move along the arrangement direction of the first platform 100 and the second platform 300. The incident position of the laser beam on the target 700 can be changed by adjusting the lens group. Then, the laser source 400 continuously emits a laser beam towards the target 700, and simultaneously the first driving mechanism 200 pneumatically rotates the first platform 100. The target 700 is continuously excited to emit plumes, and as the substrate rotates, the plumes deposit on the surface of the substrate to form a coating area 610. After the deposition of a coating area 610 is completed, the relative position of the through hole 510 and the substrate 600 is changed to form multiple continuously distributed coating areas 610 on the surface of the substrate 600, so that the entire surface of the substrate 600 is formed with a single-oriented epitaxially grown thin film. The change of the relative position of the through hole 510 and the substrate 600 can be achieved by the first driving member driving the baffle 500 to move radially along the first platform 100, or by adjusting the plate 900 to expose different through holes 510, or by adjusting the plate 900 to expose different hole groups 520.

[0067] Before coating, the relative positions of the adjusting plate 900 and the baffle 500 are changed to alter the size of the exposed area of ​​the through-hole 510, so that the through-hole 510 allows the central region of the plume to pass through precisely; or, before coating, the spot size of the laser beam is changed so that the central region of the plume excited by the laser beam passes precisely through the through-hole 510. Before coating, the rotation speed and rotation angle of the first platform 100 are set to form a thin film of the required thickness on the surface of the substrate 600, ensuring the uniformity of the film thickness.

[0068] In another embodiment, after each coating region 610 is formed, the incident position of the laser beam on the surface of the target 700 and the relative position of the through-hole 510 to the substrate 600 in the radial direction of the first platform 100 are changed. Thus, each time a new coating region 610 is deposited on the substrate 600, the laser beam is incident on a previously unexcited position on the target 700, ensuring that the feather excited by the target 700 has high energy and that the atomic orientation in the central region of the feather is consistent, and that the film thickness and orientation are consistent in different coating regions 610. By changing the relative position of the through-hole 510 to the substrate 600, the feather is deposited at different positions on the substrate 600 through the through-hole 510, thereby forming multiple continuous coating regions 610 on the surface of the substrate 600.

[0069] In one embodiment of this application, the preparation method further includes the following steps:

[0070] The deposition of coating regions 610 onto the substrate 600 is repeated multiple times. Because the multiple coating regions 610 are continuous with each other, the coating regions 610 can not completely cover the surface of the substrate 600, forming a single-crystal epitaxial film with consistent orientation on the surface of the substrate 600. Then, the target 700 is replaced. The replacement of the target 700 can be achieved by moving the base 310 relative to the target chamber 320, exposing different stages 330 from the notch. After the target 700 is replaced, the coating regions 610 are deposited onto the substrate 600 again. After repeated deposition of coating regions 610 onto the substrate 600, the coating regions 610 again cover the surface of the substrate 600, forming a multilayer single-oriented single-crystal epitaxial film on the surface of the substrate 600.

[0071] In this embodiment, a target material 700 replacement step is set between the thin film deposition steps of different layers. After the target material 700 is replaced, the material on the surface of the target material 700 is not bombarded by the laser beam, which can generate high-energy plumes; or, after the target material 700 is replaced, the material type of the target material 700 changes, which can form multiple composite thin films of different types on the surface of the substrate 600.

[0072] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments, and various changes can be made within the scope of knowledge possessed by those skilled in the art without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof can be combined with each other unless otherwise specified.

Claims

1. A single crystal epitaxial thin film laser pulse plating device, characterized in that, The single crystal epitaxial film laser pulse coating device comprises a first platform for loading a substrate; a first driving mechanism connected with the first platform and used for driving the first platform to rotate; a second platform for loading a target material, the first platform being oppositely arranged with the second platform; a laser source for emitting a laser beam to the target material to form a plume on the surface of the target material; and a baffle between the first platform and the second platform, the baffle having a through hole for the central region of the plume to pass through and deposit on the surface of the substrate to form a ring-shaped coating area on the surface of the substrate. The relative position of the through hole for the plume to pass through and the substrate can be changed to form a plurality of continuously distributed coating areas on the surface of the substrate. The single crystal epitaxial film laser pulse coating device further comprises a second driving mechanism, the second driving mechanism comprising a first driving member connected with the baffle, the first driving member being used for driving the baffle to move along the radial direction of the first platform to change the relative position of the through hole and the substrate. The laser source can emit a plurality of laser beams, a plurality of hole groups are arranged on the baffle, adjacent hole groups are distributed along the radial direction of the first platform, a plurality of through holes are arranged in each hole group, and the plurality of through holes are uniformly distributed on the same circle, each through hole in the hole group can allow the central region of the plume excited by one laser beam on the surface of the target material to pass through, and the single crystal epitaxial film laser pulse coating device further comprises an adjusting plate stacked with the baffle, the adjusting plate can move relative to the baffle to expose the through holes in one of the hole groups. The single crystal epitaxial film laser pulse coating device further comprises an adjusting plate stacked with the baffle, the adjusting plate being used for shielding the through holes, and the adjusting plate being capable of moving relative to the baffle to change the shielding range of the through holes. The adjusting plate has a shielding portion for shielding the through holes, and the edge of the shielding portion is recessed in an arc shape. The single crystal epitaxial film laser pulse coating device further comprises an adjusting plate stacked with the baffle, the baffle having a plurality of through holes, the through holes being spaced apart along the radial direction of the baffle, the adjusting plate having a through hole, and the adjusting plate being capable of moving relative to the baffle to expose one of the through holes from the through hole. The single crystal epitaxial film laser pulse coating device further comprises a second driving mechanism, the second driving mechanism comprising a second driving member connected with the baffle, the second driving member being used for driving the baffle to move along the arrangement direction of the first platform and the second platform to change the distance between the baffle and the second platform. ​ 2. The single crystal epitaxial thin film laser pulse plating device according to claim 1, characterized in that, ​ 3. The single crystal epitaxial thin film laser pulse plating device according to claim 2, characterized in that, ​ 4. The single crystal epitaxial thin film laser pulse plating device according to claim 1, wherein, ​ 5. The single crystal epitaxial thin film laser pulse plating device according to claim 1, wherein, ​ 6. The single crystal epitaxial thin film laser pulse plating device according to claim 1, wherein, The second platform comprises a base, a target material chamber and a plurality of carriers for loading the substrates, the carriers are installed on the base, the target material chamber has a gap, at least part of the base and at least one of the carriers are accommodated inside the target material chamber, and the base is capable of moving relative to the target material chamber so that one of the carriers is exposed from the gap.

7. The single crystal epitaxial thin film laser pulse plating device according to claim 1, wherein, The single-crystal epitaxial film laser pulse coating device further comprises a lens group located on the front side of the laser source, and the lens group is used to adjust the emission path of the laser beam to change the incident position of the laser beam on the target material.

8. A method of producing a single crystal epitaxial film, characterized by, The single-crystal epitaxial film laser pulse coating device of any one of claims 1 to 7 is used to perform the following steps: Adjusting the position of the through hole and / or the incident position of the laser beam on the target material so that the central region of the plume passes through the through hole; The laser source continuously emits a laser beam to the target material, and at the same time, the first driving mechanism drives the first platform to rotate to form a coating area on the surface of the substrate; The relative position of the through hole and the substrate is changed to form a plurality of continuously distributed coating areas on the surface of the substrate.

9. The method for preparing single-crystal epitaxial thin films according to claim 8, characterized in that, After each coating area is formed, the incident position of the laser beam on the target material surface and the relative position of the through hole and the substrate in the radial direction of the first platform are changed.

10. The single crystal epitaxial thin film production method according to claim 8 or 9, wherein The steps include: Repeating the deposition of the coating area on the substrate multiple times to deposit a layer of single-crystal epitaxial film on the surface of the substrate; Replacing the target material; Again depositing the coating area on the substrate to deposit a single-crystal epitaxial film on the surface of the substrate.

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