Method for manufacturing a composite getter film structure

Abstract

The application provides a manufacturing method of a composite getter film structure, comprising the following steps: forming a getter thin layer above one main surface of a substrate, forming a plurality of grooves arranged at intervals in the getter thin layer to form a patterned getter thin layer; filling a patterned sacrificial layer in the grooves; repeating the steps to form N patterned getter thin layers and N-1 patterned sacrificial layers, wherein N>=2; among the N patterned getter thin layers, at least two patterned getter thin layers contain different getter materials; and removing the N-1 patterned sacrificial layers to form pores in the in-plane direction of the patterned getter thin layers, and the pores have openings on the side surfaces of the patterned getter thin layers. The application can effectively increase the specific surface area of the getter film, greatly improve the gettering capacity and speed of the getter film, introduce two or more kinds of getter materials in one composite getter film structure, adsorb multiple kinds of gases, save space and reduce cost.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of MEMS design and manufacturing, and particularly relates to a manufacturing method of a composite getter film structure. BACKGROUND

[0002] It is known that some semiconductor devices, particularly some micro electro mechanical systems (MEMS) devices, need to be packaged to work in a vacuum environment. For example, MEMS acceleration sensors, gyroscopes, vacuum gauges, etc. with high-speed moving (displacement or vibration or rotation) components need to package the moving part in a relatively stable vacuum environment. For another example, MEMS pressure sensors that need a vacuum cavity also need a higher vacuum in the vacuum cavity, and the vacuum degree needs to be kept stable. In addition, some infrared sensors also need to be packaged in a vacuum cavity with a higher vacuum.

[0003] On the one hand, it is challenging to achieve a higher vacuum packaging. Because, during the packaging process, there are often some residual gas remaining in the vacuum cavity. Therefore, it is often necessary to seal a getter in the vacuum cavity, and activate the getter at the same time of packaging or after the packaging is completed, to absorb the residual gas in the vacuum cavity and achieve a higher vacuum required for the device to work. Getter, also known as gas absorber, in the field of vacuum technology, refers to a material that can effectively absorb and fix some or certain gas molecules. The getter material is usually a porous structure. When active gas molecules collide with the surface of the clean getter material, some gas molecules are adsorbed, which is physical adsorption of the getter material; some gas molecules will react with the getter material to form stable solid solution, which is chemical adsorption of the getter material. And the gas molecules will continue to diffuse into the material, so as to achieve the purpose of removing a large amount of active gas. Generally speaking, the adsorption effect of the getter is better and faster on the surface layer, so the larger the surface area of the getter, the better the adsorption performance (i.e. the more gas can be adsorbed, and the faster the adsorption rate). This is also the reason why the getter is made into a porous material. The thin film type getter structure has the advantages of small space occupation, easy compatibility with device process, convenient wafer level packaging, and suitability for mass production.

[0004] However, the specific surface area of the existing getter is small, which makes it difficult to improve the getter performance, and for the case of needing to adsorb multiple gases, multiple different types of getters need to be set, resulting in a larger volume of the device. SUMMARY

[0005] In view of the above-mentioned disadvantages of the prior art, the present application aims to provide a manufacturing method of a composite getter thin film structure, which is used to solve the problem that the specific surface area of the getter is small, so that the getter is difficult to improve the gettering performance, and for the case of needing to adsorb multiple gases, multiple different kinds of getters need to be set, which results in a large volume of the device.

[0006] To achieve the above-mentioned objects and other related objects, the present application provides a manufacturing method of a composite getter thin film structure, which comprises the following steps: providing a substrate, forming a getter thin layer above one main surface of the substrate, and forming multiple grooves arranged at intervals in the getter thin layer to form a patterned getter thin layer; filling a patterned sacrificial layer in the grooves; repeating the above-mentioned steps to form N patterned getter thin layers and N-1 patterned sacrificial layers, wherein N≥2, and no patterned sacrificial layer needs to be formed on the topmost patterned getter thin layer; at least two of the N patterned getter thin layers contain different getter materials; and removing the N-1 patterned sacrificial layers to form pores in the in-plane direction of the patterned getter thin layer, and the pores have openings on the side surfaces of the patterned getter thin layer.

[0007] Optionally, the pores in the in-plane direction of the patterned getter thin layer penetrate at least two side surfaces of the patterned getter thin layer to form openings on the at least two side surfaces of the patterned getter thin layer.

[0008] Optionally, the projections of the pores in the adjacent two patterned getter thin layers on the substrate intersect.

[0009] Optionally, the projections of the pores in the adjacent two patterned getter thin layers on the substrate perpendicularly intersect.

[0010] Optionally, the length of the pores in the in-plane direction of the patterned getter thin layer is not less than the thickness of the patterned getter thin layer.

[0011] Optionally, the width of the pores in the in-plane direction of the patterned getter thin layer is not less than 50 nm.

[0012] Optionally, before the first getter thin layer is formed, the method further comprises the step of forming a bottom getter thin layer above one main surface of the substrate.

[0013] Optionally, the getter thin layer is formed by a sputtering method.

[0014] Optionally, the method for removing the patterned sacrificial layer comprises one of a liquid solvent dissolution method and a gas plasma etching method.

[0015] Optionally, the patterned sacrificial layer comprises one of a pattern formed by photoresist and a pattern formed by polyimide.

[0016] Optionally, the patterned sacrificial layer comprises a pattern formed by a compound of silicon.

[0017] Optionally, the getter thin layer comprises one of Zr-based non-evaporable getter and Ti-based non-evaporable getter, but is not limited to Zr-based and Ti-based getters.

[0018] Optionally, the thickness of the getter thin layer is 100 nm to 1 μm.

[0019] Optionally, in the N getter thin layers, the getter materials contained in any two of the patterned getter thin layers are different.

[0020] Optionally, in the N patterned getter thin layers, a plurality of layers of the getter thin layers are stacked to form a getter thin layer group, the getter thin layers in the same getter thin layer group contain the same getter material, and any two of the getter thin layer groups contain different getter materials, thereby realizing a composite getter thin film structure containing multiple kinds of getter materials.

[0021] As described above, the method for manufacturing the composite getter thin film structure has the following beneficial effects:

[0022] The composite getter thin film structure provided by the present application can effectively increase the specific surface area of the getter thin film by forming transverse channels of the getter thin film in the in-plane direction, greatly improving the gettering capacity and speed. On the other hand, the composite getter thin film structure of the present application can have sufficient mechanical strength, and the usability is guaranteed. On the other hand, compared with ordinary getter thin films, the present application can use less getter to achieve the same gettering effect, thereby reducing the overall cost of the device. On the other hand, the present application can introduce two or more kinds of getter materials in one composite getter thin film structure, which can correspond to the adsorption of multiple gases, while saving space and reducing cost. BRIEF DESCRIPTION OF DRAWINGS

[0023] The accompanying drawings, which are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this application, illustrate embodiments of the present application and together with the description serve to explain the principles of the present application. It is readily understood that the drawings are merely illustrative of some embodiments of the present application.

[0024] Figure 1 FIG. 1 shows a schematic diagram of the three-dimensional structure of the composite getter thin film structure prepared in Example 1 of the present application, Figure 2 , Figure 3 , Figure 4 , Figure 5Fig. 2 shows a cross-sectional structure schematic diagram of the composite getter film structure of the embodiment of the present application at A-A' in the corresponding step of the manufacturing method thereof, Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 Fig. 3 shows a cross-sectional structure schematic diagram of the composite getter film structure of the embodiment of the present application at B-B' in the corresponding step of the manufacturing method thereof.

[0025] Figures 10-17 Fig. 4 shows a cross-sectional structure schematic diagram of the composite getter film structure of the embodiment 2 of the present application in the corresponding step of the manufacturing method thereof.

[0026] Element number explanation

[0027] 10, 50 substrate

[0028] 20 composite getter film structure

[0029] 21, 61 first layer of getter thin layer

[0030] 21', 61' first layer of patterned getter thin layer

[0031] 31, 71 first layer of patterned sacrificial layer

[0032] 22, 62 second layer of getter thin layer

[0033] 22', 62' second layer of patterned getter thin layer

[0034] 32, 72 second layer of patterned sacrificial layer

[0035] 23, 63 third layer of getter thin layer

[0036] 23', 63' third layer of patterned getter thin layer

[0037] 33, 73 third layer of patterned sacrificial layer

[0038] 24, 64 fourth layer of getter thin layer

[0039] 24', 64' fourth layer of patterned getter thin layer

[0040] 34, 74 fourth layer of patterned sacrificial layer

[0041] 25, 65 fifth layer of getter thin layer

[0042] 25', 65' fifth layer of patterned getter thin layer

[0043] 41, 81 aperture DETAILED DESCRIPTION

[0044] Following, through specific examples, the advantages and effects of the present application can be easily understood by those skilled in the art from the disclosure of this specification. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can be modified or changed based on different views and applications without departing from the spirit of the present application.

[0045] As in the detailed description of the embodiments of the present application, the cross-sectional views showing the device structures can be partially enlarged without the general scale for the convenience of description, and the schematic views are only examples which should not limit the scope of protection of the present application herein. In addition, the three-dimensional spatial dimensions including length, width and depth should be included in the actual fabrication.

[0046] For the convenience of description, spatial relationship words such as "under", "below", "lower", "underneath", "above", "upper" and the like can be used herein to describe the relationship of one element or feature with other elements or features shown in the drawings. It will be understood that these spatial relationship words are intended to include other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as "between" two layers, it can be the only layer between the two layers, or one or more intervening layers can also be present.

[0047] In the context of the present application, the structure described with the first feature "on" the second feature can include the embodiment in which the first and second features are formed in direct contact, and can also include the embodiment in which another feature is formed between the first and second features, so that the first and second features can not be in direct contact.

[0048] It should be noted that the diagrams provided in the embodiments only schematically illustrate the basic concepts of the present application, and only the components related to the present application are shown in the diagrams, not the number, shape and size of the components when actually implemented. The actual implementation of each component can be a random change in shape, number and proportion, and the layout pattern of the components can also be more complex.

[0049] Sputtering is a common technique for forming a getter film structure. A getter film structure formed by sputtering tends to form continuous pores in the thickness direction of the film, but it is difficult to form continuous pores in the in-plane direction of the film. However, when the thickness of the getter film reaches a certain level, it becomes difficult to form pores that connect from the surface of the film to the bottom layer of the film, and the pores in the film become smaller. In this case, not only is the surface area of the film limited, but the speed of adsorption also becomes slower. Therefore, when the thickness of the film reaches a certain level, the effect of increasing the adsorption performance of the getter by increasing the thickness of the film decreases. Furthermore, since the getter is generally expensive, increasing the thickness of the getter film means increasing the cost of the entire encapsulated device. On the other hand, the surface area of the getter film can be increased by reducing the density of the getter film to increase the pores. However, if the density is too loose, the mechanical properties of the film will deteriorate, and the film will be prone to cracking and peeling, thereby affecting the usability.

[0050] In general, a specific getter film has limitations in the types of gases that it can adsorb. That is, it can have a strong adsorption ability for some gases, but it can not have a strong adsorption ability for other gases. For example, the pumping speed of zirconium-vanadium-iron getter for H2remains essentially unchanged at both high and low temperatures, but for CO, the diffusion rate of CO is low at room temperature, so when the surface of the getter is close to saturation, the getter capacity is limited, and the pumping speed becomes slow. The pumping speed of zirconium-vanadium-iron getter for N2is about 15% of that for H2. In addition, titanium-zirconium-vanadium getter has a strong ability to absorb O2, and when the vanadium content in the getter increases, the pumping speed for O2 increases, but the pumping speed for H2 decreases. In order to effectively adsorb the main gases in the vacuum chamber, it is sometimes desirable to provide two or more types of getters in the vacuum chamber. For conventional technology, this requires the introduction of two or more types of getter materials, which occupies a large space in the vacuum chamber and is also relatively expensive.

[0051] Example 1

[0052] As shown in Figures 1-9 , a method for manufacturing a composite getter film structure is provided, the method comprising the steps of: providing a substrate, forming a getter thin layer above one main surface of the substrate, forming a plurality of grooves arranged at intervals in the getter thin layer to form a patterned getter thin layer; filling a patterned sacrificial layer in the grooves; repeating the above steps to form N patterned getter thin layers and N-1 patterned sacrificial layers, where N≥2, and no patterned sacrificial layer is formed on the topmost patterned getter thin layer; of the N patterned getter thin layers, at least two patterned getter thin layers contain different getter materials; removing the N-1 patterned sacrificial layers to form pores in the in-plane direction of the patterned getter thin layer, the pores having openings on the side surfaces of the patterned getter thin layer.

[0053] In one embodiment, the substrate can be a silicon substrate, a glass substrate, a quartz substrate, or a metal cover plate in a MEMS package, etc.

[0054] In one embodiment, the pores in the in-plane direction of the patterned getter thin layer penetrate at least two sides of the patterned getter thin layer to form openings on at least two sides of the patterned getter thin layer, thereby forming a transverse channel in the getter thin layer, which is a structure penetrating at both ends, which can effectively increase the flow speed of the gas, thereby increasing the gettering speed of the getter thin layer.

[0055] In one embodiment, the projections of the pores in the adjacent two patterned getter thin layers on the substrate have intersections. For example, the intersection angle of the projections of the pores in the adjacent two patterned getter thin layers on the substrate can be 30 degrees, 45 degrees, 60 degrees, 90 degrees, etc. In a specific implementation process, the projections of the pores in the adjacent two patterned getter thin layers on the substrate intersect perpendicularly.

[0056] In one embodiment, the length of the pores in the in-plane direction of the patterned getter thin layer is not less than the thickness of the patterned getter thin layer, thereby at least ensuring the gettering capacity and the gettering speed of the patterned getter thin layer.

[0057] In one embodiment, the width of the pores in the in-plane direction of the patterned getter thin layer is not less than 50 nm. For example, the width of the pores in the in-plane direction of the patterned getter thin layer can be 80 nm, 100 nm, 150 nm, etc. This width range can on the one hand ensure the specific surface area of the patterned getter thin layer, and on the other hand ensure the mechanical strength of the patterned getter thin layer.

[0058] In one embodiment, before the first getter thin layer is formed, the step of forming a bottom getter thin layer above one main surface of the substrate is further included. The bottom getter thin layer can be patterned or not patterned and can be gettering through the pores (pores in the first layer of getter thin layer) above it, so as to better utilize the space while improving the gettering capacity of the composite getter thin film structure.

[0059] In one embodiment, the getter thin layer is formed by a sputtering method or a vacuum evaporation method.

[0060] In one embodiment, the method for removing the patterned sacrificial layer includes one of a liquid solvent dissolution method and a gas plasma etching method.

[0061] In one embodiment, the patterned sacrificial layer includes one of a pattern formed by a photoresist and a pattern formed by a polyimide.

[0062] In one embodiment, the patterned sacrificial layer comprises a pattern formed of a silicon compound, the silicon compound having a selectivity ratio with the getter layer in the same etching process, such that the selectivity ratio is, for example, greater than 50:1.

[0063] In one embodiment, the material of the getter thin layer can be a Zr-based non-evaporable getter, such as Zr-V-Fe, Zr-Al, Zr-Mn-Fe, etc., or a Ti-based non-evaporable getter, such as Ti-Fe-V-Mn, Ti-Mo, Ti-Zr-Ni, etc.

[0064] In one embodiment, the thickness of the getter layer is 100 nm to 1 μm, and the thickness of the getter layer can be, for example, 200 nm, 500 nm, 800 nm, etc.

[0065] In one embodiment, any two of the N getter layers contain different getter materials.

[0066] In one embodiment, among the N graphic getter layers, each stack of several getter layers forms a getter layer group. The getter layers within the same getter layer group contain the same getter material, and any two getter layer groups contain different getter materials, thereby realizing a composite getter film structure containing multiple getter materials.

[0067] like Figures 1-9 As shown, where, Figure 1 The diagram shown is a three-dimensional structural schematic of the composite getter film structure 20 prepared in this embodiment. Figure 2 , 3 Figures 4 and 5 show the cross-sectional structural diagrams at point A-A' in the corresponding steps. Figure 6 , 7 Figures 8 and 9 show schematic diagrams of the cross-sectional structure at point B-B' in the corresponding steps. The preparation process of a 5-layer composite getter film structure 20 is described in detail below.

[0068] like Figure 2 As shown, step 1) is performed first, providing a substrate 10. At room temperature, a first getter layer 21 is sputtered and deposited on the substrate 10. The thickness of this getter layer can be 100 nm to 1 μm. The material of the first getter layer 21 is a Zr-based non-evaporable getter or a Ti-based non-evaporable getter. For example, it can be getter A, which can be a zirconium vanadium iron getter, exhibiting a high absorption capacity and fast absorption rate for H2. Alternatively, before preparing the first getter layer 21, a bottom getter layer (not shown) can be formed above one of the main surfaces of the substrate 10.

[0069] like Figure 3 As shown, step 2) is then performed to pattern the first getter layer 21 to form a patterned first getter layer 21', thereby forming the desired trench pattern on the surface of the first getter layer 21. The trenches can either completely penetrate the first patterned getter layer 21' in the thickness direction, or they can not penetrate the first patterned getter layer 21' in the thickness direction, leaving a portion of the first getter layer 21 at the bottom of the trench. The width of the trench can be 50 nm to 1 μm, and the number of trenches is not less than two, and can be customized according to actual needs. The patterning process can employ either an etching method or a hard mask method. The etching method involves spin-coating photoresist onto the first getter layer 21, followed by exposure, development, and etching to form the desired trenches on the first getter layer 21, and finally removing the photoresist. The hard masking method uses a patterned metal mask. First, a metal layer is deposited on the surface of the first getter layer 21 as a mask. Then, the metal mask is patterned by etching to form a patterned metal mask. After that, the getter layer is etched to form a trench pattern in the getter film. Finally, the metal mask is removed.

[0070] like Figure 4 As shown, step 3) is then performed, where photoresist is filled into the trench position of the first getter layer 21 as the first pattern sacrificial layer 31. The photoresist filling method can be spin coating, etc.

[0071] like Figure 5 As shown, step 4) is then performed, where a second getter layer 22 is sputtered and deposited on the first patterned getter layer 21', with a thickness of 100 nm to 1 μm. The material of the second getter layer 22 is a Zr-based non-evaporable getter or a Ti-based non-evaporable getter. For example, it can be a getter B containing a different material than getter A. For example, getter B can be a titanium zirconium vanadium getter, which can have a large absorption capacity and a fast absorption rate for O2.

[0072] like Figure 6 As shown, then step 5) is performed to pattern the second getter layer 22 to form a second patterned getter layer 22'. The pattern of the second patterned getter layer 22' is perpendicular to the pattern of the first patterned getter layer 21'. If there are a total of two getter layers (N=2), the sacrificial layer can be removed after this step. However, in this example, there are a total of 5 getter layers, so the following steps are required.

[0073] like Figure 7As shown, step 6) is then performed. After patterning the second getter layer 22, photoresist is filled into the trenches of the second getter layer 22 as the second patterning sacrificial layer 32.

[0074] like Figure 8 As shown, step 7) is then performed, repeating steps 1) to 6) until a third patterned getter layer 23' and a third patterned sacrificial layer 33 are formed based on the third getter layer 23, a fourth patterned getter layer 24' and a fourth patterned sacrificial layer 34 are formed based on the fourth getter layer 24, and a fifth patterned getter layer 25' is formed based on the fifth getter layer 25. The trenches of the fifth patterned getter layer 25' do not need to be filled with a patterned sacrificial layer. The pattern of each patterned getter layer is perpendicular to the pattern of the adjacent getter layer, thereby effectively improving the mechanical strength of the final composite getter film structure 20. In one embodiment, each of the above-mentioned patterned getter layers and the adjacent patterned getter layers are getter layers made of different materials. In addition, getter materials are not limited to the two types of getter A and getter B mentioned above. Each layer of patterned getter can be a new getter material, and the entire getter structure can be made of two or more getter materials.

[0075] like Figure 9 As shown, in step 8), after depositing and patterning the five getter layers, the wafer is immersed in an organic cleaning tank to remove the patterning sacrificial layer using a wet process, ultimately achieving... Figure 1 The composite getter film structure 20 shown has pores 41 (lateral channels). In this embodiment, the projections of the pores 41 of two adjacent getter films onto the substrate 10 are perpendicular. The composite getter film structure 20 prepared using this method can achieve the adsorption of a larger amount of gas, and the gas adsorption rate is faster than that of normal film getters.

[0076] Example 2

[0077] like Figures 10-17 As shown, this embodiment provides a method for manufacturing a composite getter film structure, including the following steps:

[0078] like Figure 10As shown, step 1) is performed first, providing a substrate 50. At room temperature, a first getter layer 61 is sputtered and deposited on the substrate 50. The thickness of this getter layer can be 100 nm to 1 μm. The material of the first getter layer 61 is a Zr-based non-evaporable getter or a Ti-based non-evaporable getter. For example, it can be getter A, which can be a zirconium vanadium iron getter, exhibiting a high absorption capacity and fast absorption rate for H2. Alternatively, before preparing the first getter layer 61, a bottom getter layer (not shown) can be formed above one of the main surfaces of the substrate 50.

[0079] like Figure 11 As shown, step 2) is then performed to pattern the first getter layer 61 to form a patterned first getter layer 61', thereby forming the desired trench pattern on the surface of the first getter layer 61. The trenches can either completely penetrate the first patterned getter layer 61' in the thickness direction, or they can not penetrate the first patterned getter layer 61' in the thickness direction, leaving a portion of the first getter layer 61 at the bottom of the trench. The width of the trench can be 50 nm to 1 μm, and the number of trenches is not less than two, and can be customized according to actual needs. The patterning process can employ either an etching method or a hard mask method. The etching method involves spin-coating photoresist onto the first getter layer 61, followed by exposure, development, and etching to form the desired trenches on the first getter layer 61, and finally removing the photoresist. The hard masking method uses a patterned metal mask. First, a metal layer is deposited on the surface of the first getter layer 61 as a mask. Then, the metal mask is patterned by etching to form a patterned metal mask. After that, the getter layer is etched to form a trench pattern in the getter film. Finally, the metal mask is removed.

[0080] like Figure 12 As shown, step 3) is then performed, where photoresist is filled into the trench position of the first getter layer 61 as the first pattern sacrificial layer 71. The photoresist filling method can be spin coating, etc.

[0081] like Figure 13 As shown, step 4) is then performed, where a second getter layer 62 is sputtered and deposited on the first patterned getter layer 61', with a thickness of 100 nm to 1 μm. The material of the second getter layer 62 is a Zr-based non-evaporable getter or a Ti-based non-evaporable getter. For example, it can be the same getter A as the material of the first patterned getter layer.

[0082] like Figure 14As shown, then step 5) is performed to pattern the second getter layer 62 to form a second patterned getter layer 62'. The pattern of the second patterned getter layer 62' is perpendicular to the pattern of the first patterned getter layer 61'. If there are a total of two getter layers (N=2), the sacrificial layer can be removed after this step. However, in this example, there are a total of 5 getter layers, so the following steps are required.

[0083] like Figure 15 As shown, step 6) is then performed. After patterning the second getter layer 62, photoresist is filled into the trenches of the second getter layer 62 as the second patterning sacrificial layer 72.

[0084] like Figure 16 As shown, step 7) is then performed, repeating steps 1) to 6) until a third patterned getter layer 63' and a third patterned sacrificial layer 73 are formed based on the third getter layer 63, a fourth patterned getter layer 64' and a fourth patterned sacrificial layer 74 are formed based on the fourth getter layer 64, and a fifth patterned getter layer 65' is formed based on the fifth getter layer 65. The trenches of the fifth patterned getter layer 65' do not need to be filled with a patterned sacrificial layer. For example, the materials of the third patterned getter layer 63', the fourth patterned getter layer 64', and the fifth patterned getter layer 65' can be getter B, which contains a different material than getter A. For example, getter B can be a titanium zirconium vanadium getter, which has a large absorption capacity and a fast absorption rate for O2. The patterns of each of the above patterned getter layers are perpendicular to the patterns of the adjacent getter layers, thereby effectively improving the mechanical strength of the final composite getter film structure. Furthermore, the getter material is not limited to the two getter materials A and B mentioned above. Each patterned getter film can be a new getter material, and the entire getter structure can use two or more getter materials. In fact, during this manufacturing process, the number of getter film layers and the type of getter can be freely combined according to the requirements of the device, and are not limited to the two getter materials A and B listed here.

[0085] like Figure 17 As shown, in step 8), after depositing and patterning the five getter layers, the wafer is immersed in an organic cleaning tank to remove the patterning sacrificial layer using a wet process, ultimately achieving... Figure 1 The composite getter film structure shown has pores 81 (lateral channels). In this embodiment, the projections of the pores 81 of two adjacent getter films onto the substrate 50 are perpendicular. The composite getter film structure prepared using this method can achieve the adsorption of a larger amount of gas, and the gas absorption rate is faster than that of normal film getters.

[0086] As described above, the method for manufacturing the composite getter film structure 20 of the present invention has the following beneficial effects:

[0087] This invention provides a composite getter film structure. By creating lateral channels in the getter film through in-plane voids, the specific surface area of ​​the getter film can be effectively increased, significantly improving its getter capacity and speed. Furthermore, the composite getter film structure of this invention possesses sufficient mechanical strength, ensuring usability. Moreover, compared to ordinary getter films, this invention can achieve the same getter effect with less getter, thereby reducing the overall cost of the device. Additionally, this invention allows for the introduction of two or more getter materials into a single composite getter film structure, enabling the adsorption of various gases while saving space and reducing costs.

[0088] Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0089] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for manufacturing a composite getter film structure, characterized in that, The manufacturing method includes the following steps: A substrate is provided, and a getter layer is formed over a main surface of the substrate, wherein a plurality of grooves are formed in the getter layer at intervals to form a patterned getter layer. A patterned sacrificial layer is filled into the trench; Repeat the above steps to form N patterned getter layers and N-1 patterned sacrificial layers, where N≥2, and a patterned sacrificial layer is not required on the topmost patterned getter layer; among the N patterned getter layers, at least two patterned getter layers contain different getter materials. N-1 of the patterned sacrificial layers are removed to form pores in the in-plane direction of the patterned getter layer, the pores having openings on the side surface of the patterned getter layer.

2. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The pores penetrate at least two sides of the patterned getter layer in the in-plane direction to form openings on at least two sides of the patterned getter layer.

3. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The projections of pores in two adjacent patterned getter layers onto the substrate intersect.

4. The method for manufacturing the composite getter film structure according to claim 3, characterized in that, The projections of the pores in two adjacent patterned getter layers onto the substrate are perpendicular.

5. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The length of the pores in the in-plane direction of the patterned getter layer is not less than the thickness of the patterned getter layer.

6. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The width of the pores in the in-plane direction of the patterned getter thin layer is not less than 50 nm.

7. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, Prior to the formation of the first getter layer, the method further includes the step of forming a bottom getter layer over a main surface of the substrate.

8. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The getter layer is formed by sputtering.

9. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The method for removing the patterned sacrificial layer includes one of the following: liquid solvent dissolution method and gas plasma etching method.

10. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The patterned sacrificial layer includes either a pattern formed by photoresist or a pattern formed by polyimide.

11. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The patterned sacrificial layer comprises a pattern formed from silicon compounds.

12. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The material of the getter thin layer includes one of Zr-based non-evaporable getters and Ti-based non-evaporable getters.

13. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, The thickness of the getter layer is 100 nm to 1 μm.

14. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, In the N graphic getter layers, the getter materials contained in any two graphic getter layers are different.

15. The method for manufacturing the composite getter film structure according to claim 1, characterized in that, In the N patterned getter thin layers, each stack of several patterned getter thin layers forms a patterned getter thin layer group. The patterned getter thin layers in the same patterned getter thin layer group contain the same getter material, and any two patterned getter thin layer groups contain different getter materials, thereby realizing a composite getter film structure containing multiple getter materials.

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