High frequency module and communication device

Abstract

A high-frequency module (1) includes: a module substrate (91) having main surfaces (91a, 91b); one or more module components disposed on the main surface (91a); a resin member (92) covering the main surface (91a); and a metal shielding layer (95) covering top surfaces of the resin member (92) and the one or more module components and set to a ground potential. A sub-module component (190) as one of the one or more module components includes: a sub-module substrate (191) having main surfaces (191a, 191b); a first circuit component disposed on the main surface (191a); one or more second circuit components disposed on the main surface (191a or 191b); a resin member (192) covering the main surface (191a); and a side surface shielding layer (194) covering side surfaces of the resin member (192) and the sub-module substrate (191) and set to the ground potential. An end surface of the side surface shielding layer (194) on a top surface side is in contact with the metal shielding layer (95).

Description

Technical Field

[0001] This invention relates to high-frequency modules and communication devices. Background Technology

[0002] In mobile communication devices such as portable phones, especially with the development of multi-band technology, the configuration structure of the circuit components constituting the high-frequency front-end module has become more complex. Patent Document 1 discloses a front-end circuit in which a power amplifier, a low-noise amplifier, a switching circuit, and a bidirectional circuit are packaged.

[0003] Prior art literature

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-137522 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In such conventional front-end circuits, there is a concern about the degradation of electrical characteristics (e.g., noise figure (NF), gain characteristics, etc.).

[0008] Therefore, the object of the present invention is to provide a high-frequency module and a communication device that can improve electrical characteristics.

[0009] Technical solutions for solving the problem

[0010] One aspect of the present invention relates to a high-frequency module comprising: a first substrate having a first main surface and a second main surface opposite to the first main surface; one or more module components disposed on the first main surface; a first resin member covering the first main surface; and a first metal shielding layer covering the top surface of the first resin member and each of the one or more module components, and being set to a ground potential.

[0011] Each of the one or more module components includes: a second substrate having a third main surface and a fourth main surface opposite to the third main surface; a first circuit component disposed on the third main surface; one or more second circuit components disposed on the third main surface or the fourth main surface; a second resin member covering the third main surface; and a second metal shielding layer covering the side surfaces of the second resin member and the second substrate, and being set to a ground potential.

[0012] The top side end face of the second metal shielding layer is connected to the first metal shielding layer.

[0013] Furthermore, one aspect of the communication device according to the present invention includes: an RF signal processing circuit for processing high-frequency signals transmitted and received by an antenna; and a high-frequency module for transmitting high-frequency signals between the antenna and the RF signal processing circuit.

[0014] Invention Effects

[0015] The high-frequency module and the like disclosed in this invention can improve electrical characteristics. Attached Figure Description

[0016] Figure 1 This is a circuit structure diagram of the high-frequency module and communication device involved in the implementation method.

[0017] Figure 2 This is a top view of the high-frequency module involved in Embodiment 1.

[0018] Figure 3 This is a cross-sectional view of the high-frequency module involved in Embodiment 1.

[0019] Figure 4 This is a top view of the high-frequency module involved in Embodiment 2.

[0020] Figure 5 This is a cross-sectional view of the high-frequency module involved in Embodiment 2.

[0021] Figure 6 This is a top view of the high-frequency module involved in Embodiment 3. Detailed Implementation

[0022] Hereinafter, the high-frequency module and communication device according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, the embodiments described below are all specific examples of the present invention. Therefore, the values, shapes, materials, constituent elements, arrangements of constituent elements, and connection methods shown in the following embodiments are merely examples and are not intended to limit the present invention. Therefore, constituent elements not described in the independent claims in the following embodiments will be described as arbitrary constituent elements.

[0023] Furthermore, these figures are illustrative and may not be strictly accurate. Therefore, for example, the scales may not be consistent across figures. Additionally, substantially identical structures are labeled with the same reference numerals across figures, and repetitive descriptions are omitted or simplified.

[0024] Furthermore, in this specification, terms such as parallel or perpendicular indicating the relationship between elements, terms such as rectangle or straight line indicating the shape of elements, and numerical ranges are not merely expressions of a strict meaning, but rather expressions that imply substantially equivalent ranges, for example, also including expressions of a few percent degree of difference.

[0025] Furthermore, in this specification, the terms "above" and "below" do not refer to the upper (vertically above) and lower (vertically below) directions in absolute spatial identification, but are used as terms defined by relative positional relationships based on the stacking order in a stacked structure. Therefore, for example, the "upper surface" or "top surface" of a component or member can, in practical use, refer not only to the surface on the vertically above side, but also to the surface on the vertically below side, or a surface orthogonal to the horizontal direction, and various other types of surfaces. Additionally, the term "top surface" of a component or member means the uppermost surface of that component or member.

[0026] Furthermore, in this specification and accompanying drawings, the x-axis, y-axis, and z-axis represent the three axes of a three-dimensional orthogonal coordinate system. When the top view of the module substrate is rectangular, the x-axis and y-axis are parallel to the first side of the rectangle and the second side, which is orthogonal to the first side, respectively. The z-axis is the thickness direction of the module substrate. Additionally, in this specification, the term "thickness direction" of the module substrate refers to the direction perpendicular to the main surface of the module substrate.

[0027] Furthermore, in this specification, the term "connection" includes not only direct connections via connection terminals and / or wiring conductors, but also electrical connections via other circuit elements. Additionally, the term "connection between A and B" means a connection between A and B, or a connection between both A and B.

[0028] Furthermore, in the component configuration of the present invention, the term "top view of the module substrate" means viewing the object by orthographic projection from the positive z-axis side onto the xy-plane. Furthermore, the term "component disposed on the substrate" includes, in addition to the component being disposed on the substrate in contact with the substrate, it also includes being disposed above the substrate without contact with the substrate (e.g., the component is stacked on top of other components disposed on the substrate), and being partially or entirely embedded within the substrate. Furthermore, the term "component disposed on the main surface of the substrate" includes, in addition to the component being disposed on the main surface of the substrate in contact with the main surface, it also includes being disposed above the main surface without contact with the main surface, and being partially embedded within the substrate from the main surface side. Furthermore, the term "A disposed between B and C" means that at least one of a plurality of line segments connecting any point in B and any point in C passes through A.

[0029] Furthermore, in this specification, ordinal numbers such as "the first" and "the second" do not imply the quantity or order of constituent elements unless otherwise specified, but are used for the purpose of avoiding confusion between similar constituent elements and for differentiation.

[0030] (Implementation Method)

[0031] [1. Circuit structure of high-frequency module and communication device]

[0032] use Figure 1 The circuit structure of the high-frequency module and communication device involved in the implementation method is described. Figure 1 This is a circuit diagram of the high-frequency module 1 and the communication device 5 involved in this embodiment.

[0033] [1-1. Circuit Structure of Communication Devices]

[0034] First, the circuit structure of communication device 5 will be described. Communication device 5 is a device used in a communication system, such as a smartphone or tablet computer, or other portable terminal. Figure 1 As shown, the communication device 5 according to this embodiment includes a high-frequency module 1, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0035] High-frequency module 1 transmits high-frequency signals between antenna 2 and RFIC 3. The internal structure of high-frequency module 1 will be described later.

[0036] Antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 to transmit high-frequency signals output from the high-frequency module 1. In addition, it receives high-frequency signals from the outside and outputs them to the high-frequency module 1.

[0037] RFIC3 is an example of a signal processing circuit that processes high-frequency signals transmitted and received by antenna 2. Specifically, RFIC3 processes the high-frequency received signal input via the receiving path of high-frequency module 1 using down-conversion or the like, and outputs the received signal generated by this signal processing to BBIC4. Furthermore, RFIC3 processes the transmitted signal input from BBIC4 using up-conversion or the like, and outputs the high-frequency transmitted signal generated by this signal processing to the transmitting path of high-frequency module 1. In addition, RFIC3 has a control unit that controls the switches and amplifiers in high-frequency module 1. Furthermore, some or all of the functions of the control unit of RFIC3 can be installed externally to RFIC3, for example, in BBIC4 or high-frequency module 1.

[0038] BBIC4 is a baseband signal processing circuit that performs signal processing using an intermediate frequency band that is lower than the high-frequency signal transmitted by high-frequency module 1. The signals processed by BBIC4 can be, for example, image signals for image display and / or audio signals for communication via a speaker.

[0039] Furthermore, in the communication device 5 according to this embodiment, the antenna 2 and BBIC4 are not essential components.

[0040] [1-2. Circuit Structure of High-Frequency Module]

[0041] Next, the circuit structure of high-frequency module 1 will be described. For example... Figure 1 As shown, the high-frequency module 1 includes a power amplifier 11, a PA control circuit 12, a low-noise amplifier 21, matching circuits 31 and 41, switches 51 to 53, a duplexer 60, a biplexer 61 and 62, matching circuits 71 and 72, an antenna connection terminal 100, a high-frequency input terminal 111, a control input terminal 112, a power supply terminal 113, and a high-frequency output terminal 121.

[0042] Antenna connection terminal 100 is connected to antenna 2.

[0043] The high-frequency input terminal 111 is a terminal used to receive high-frequency transmission signals from outside the high-frequency module 1. In this embodiment, the high-frequency input terminal 111 is a terminal used to receive transmission signals of communication frequency bands A and B from the RFIC3.

[0044] Control input terminal 112 is a terminal for receiving digital signals used to control the gain of power amplifier 11, the power supply voltage supplied to power amplifier 11, and the bias voltage. For example, control input terminal 112 is a MIPI (Mobile Industry Processor Interface) terminal that receives digital signals from RFIC3.

[0045] Power terminal 113 is a terminal that receives DC power, which forms the basis for the power supply voltage and bias voltage supplied to power amplifier 11.

[0046] The high-frequency output terminal 121 is a terminal used to provide high-frequency received signals to the outside of the high-frequency module 1. In this embodiment, the high-frequency output terminal 121 is a terminal used to provide received signals of communication frequency bands A and B to the RFIC3.

[0047] In addition, the so-called communication frequency band means the frequency band predefined for communication systems by standardization organizations such as 3GPP (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers).

[0048] Here, the term "communication system" refers to a communication system built using Radio Access Technology (RAT). Examples of communication systems include, but are not limited to, 5G NR (5th Generation New Radio), LTE (Long Term Evolution), and WLAN (Wireless Local Area Network) systems.

[0049] Communication band A is an example of a first communication band. Communication band B is an example of a second communication band. Communication bands A and B are different communication bands. In this embodiment, communication bands A and B are communication bands used for Frequency Division Duplex (FDD). More specifically, communication bands A and B can be LTE bands B1, B2, B3, or B7, or 5G NR bands n1, n2, n3, or n7, but communication bands A and B are not limited to these.

[0050] Alternatively, as at least one of communication frequency bands A and B, a communication frequency band used for Time Division Duplex (TDD) can also be used. More specifically, as at least one of communication frequency bands A and B, frequency bands B32, B39, B40, or B41 used for LTE, or frequency bands n39, n40, or n41 used for 5G NR can also be used.

[0051] The power amplifier 11 amplifies the transmitted signals of communication bands A and B. Here, the input terminal of the power amplifier 11 is connected to the high-frequency input terminal 111, and the output terminal of the power amplifier 11 is connected to the matching circuit 31.

[0052] The structure of the power amplifier 11 is not particularly limited. For example, the power amplifier 11 can be a single-stage structure or a multi-stage structure. For example, the power amplifier 11 can also have multiple amplifying elements connected in cascade. In addition, the power amplifier 11 can also convert high-frequency signals into differential signals (i.e., complementary signals) for amplification. Such a power amplifier 11 is sometimes called a differential amplifier.

[0053] PA control circuit 12 is an example of a control circuit that controls power amplifier 11. PA control circuit 12 controls the gain of power amplifier 11 based on digital signals input via control input terminal 112.

[0054] The PA control circuit 12 is, for example, a semiconductor integrated circuit. The semiconductor integrated circuit is, for example, constructed using CMOS (Complementary Metal Oxide Semiconductor), specifically, using SOI (Silicon on Insulator) technology. This allows for the inexpensive manufacture of semiconductor integrated circuits. Alternatively, the semiconductor integrated circuit can also be constructed using at least one of GaAs, SiGe, and GaN.

[0055] The low-noise amplifier 21 amplifies the received signals of communication bands A and B received by the antenna connection terminal 100. Here, the input terminal of the low-noise amplifier 21 is connected to the matching circuit 41, and the output terminal of the low-noise amplifier 21 is connected to the high-frequency output terminal 121.

[0056] The structure of the low-noise amplifier 21 is not particularly limited. For example, the low-noise amplifier 21 can be a single-stage structure or a multi-stage structure. In addition, the low-noise amplifier 21 can also be a differential amplifier.

[0057] In addition, the power amplifier 11 and the low-noise amplifier 21 are, for example, made of Si-based CMOS or GaAs materials, field-effect transistors (FETs) or heterojunction bipolar transistors (HBTs).

[0058] Duplexer 60 is an example of a multiplexer, comprising filters 60L and 60H. Filter 60L is a filter whose passband includes the frequency range encompassing communication bands A and B. Filter 60L is, for example, a low-pass filter. Filter 60H is a filter whose passband includes the frequency range encompassing communication bands different from communication bands A and B. Specifically, the passband of filter 60H is a higher frequency band than the passband of filter 60L. Filter 60H is, for example, a high-pass filter. At least one of filters 60L and 60H can also be a band-pass filter or a band-stop filter.

[0059] The bidirectional converter 61 is an example of a first filter having a passband encompassing communication band A. The bidirectional converter 61 allows high-frequency signals of communication band A to pass through. The bidirectional converter 61 transmits and receives signals of communication band A in FDD mode. The bidirectional converter 61 includes a transmit filter 61T and a receive filter 61R.

[0060] The transmit filter 61T has a passband that includes the uplink operating band of communication band A. One end of the transmit filter 61T is connected to the antenna connection terminal 100 via the matching circuit 71 and the switch 51. The other end of the transmit filter 61T is connected to the output terminal of the power amplifier 11 via the switch 52 and the matching circuit 31.

[0061] The term "uplink operating frequency band" refers to a portion of the communication frequency band designated for uplink use. In high-frequency module 1, the uplink operating frequency band refers to the transmission frequency band.

[0062] The receiver filter 61R has a passband that includes the downlink operating band of communication band A. One end of the receiver filter 61R is connected to the antenna connection terminal 100 via matching circuit 71 and switch 51. The other end of the receiver filter 61R is connected to the input terminal of the low-noise amplifier 21 via switch 53 and matching circuit 41.

[0063] The term "downlink operating frequency band" refers to a portion of the communication frequency band designated for downlink use. In high-frequency module 1, the downlink operating frequency band refers to the receive frequency band.

[0064] The bidirectional converter 62 is an example of a second filter that includes a passband for communication band B. The bidirectional converter 62 allows high-frequency signals of communication band B to pass through. The bidirectional converter 62 transmits and receives signals of communication band B in FDD mode. The bidirectional converter 62 includes a transmit filter 62T and a receive filter 62R.

[0065] The transmit filter 62T has a passband that includes the uplink operating frequency band of communication band B. One end of the transmit filter 62T is connected to the antenna connection terminal 100 via the matching circuit 72 and the switch 51. The other end of the transmit filter 62T is connected to the output terminal of the power amplifier 11 via the switch 52 and the matching circuit 31.

[0066] The receiver filter 62R has a passband that includes the downlink operating frequency band of communication band B. One end of the receiver filter 62R is connected to the antenna connection terminal 100 via the matching circuit 72 and the switch 51. The other end of the receiver filter 62R is connected to the input terminal of the low-noise amplifier 21 via the switch 53 and the matching circuit 41.

[0067] Filters 60L and 60H, transmitting filters 61T and 62T, and receiving filters 61R and 62R are, for example, elastic wave filters using SAW (Surface Acoustic Wave), elastic wave filters using BAW (Bulk Acoustic Wave), LC resonant filters, and dielectric filters, but are not limited to these.

[0068] Switch 51 is an example of a first switch, connected between antenna connection terminal 100 and each of bidirectional switches 61 and 62. Switch 51 is also referred to as an antenna switch. Specifically, switch 51 has terminals 511 to 513. Terminal 511 is a common terminal connected to antenna connection terminal 100 via filter 60L. Terminal 512 is a selection terminal connected to transmit filter 61T and receive filter 61R via matching circuit 71. Terminal 513 is a selection terminal connected to transmit filter 62T and receive filter 62R via matching circuit 72.

[0069] Switch 51 can, for example, connect either terminal 512 or 513 to terminal 511 based on a control signal from RFIC3. Thus, switch 51 switches the connection between (a) antenna connection terminal 100 and transmit filter 61T and receive filter 61R, and (b) antenna connection terminal 100 and transmit filter 62T and receive filter 62R. Switch 51 is, for example, an SPDT (Single Pole Double Throw) type switch circuit. Alternatively, switch 51 can also be a multi-connection type switch circuit capable of simultaneously performing the connections described in (a) and (b).

[0070] Switch 52 is an example of a second switch, connected between bidirectional circuits 61 and 62 and power amplifier 11 respectively. Specifically, switch 52 has terminals 521 to 523. Terminal 521 is a common terminal connected to the output terminal of power amplifier 11 via matching circuit 31. Terminal 522 is a selection terminal connected to transmit filter 61T. Terminal 523 is a selection terminal connected to transmit filter 62T.

[0071] Switch 52 can, for example, connect either terminal 522 or 523 to terminal 521 based on a control signal from RFIC3. Thus, switch 52 switches the connection between power amplifier 11 and transmit filter 61T, and between power amplifier 11 and transmit filter 62T. Switch 52 is, for example, an SPDT type switch circuit.

[0072] Switch 53 is an example of a third switch, connected between bidirectional circuits 61 and 62 and low-noise amplifier 21 respectively. Specifically, switch 53 has terminals 531 to 533. Terminal 531 is a common terminal connected to the input terminal of low-noise amplifier 21 via matching circuit 41. Terminal 532 is a selection terminal connected to receiver filter 61R. Terminal 533 is a selection terminal connected to receiver filter 62R.

[0073] Switch 53, for example, can connect either terminal 532 or 533 to terminal 531 based on a control signal from RFIC3. Thus, switch 53 switches the connection between low-noise amplifier 21 and receiver filter 61R, and between low-noise amplifier 21 and receiver filter 62R. Switch 53 is, for example, an SPDT type switch circuit.

[0074] Matching circuit 31 is connected to the output terminal of power amplifier 11. Specifically, matching circuit 31 is connected between power amplifier 11 and switch 52. Matching circuit 31 achieves impedance matching between power amplifier 11 and the transmitting filter 61T of bidirectional circuit 61 and the transmitting filter 62T of bidirectional circuit 62.

[0075] Matching circuit 41 is connected to the input terminal of low-noise amplifier 21. Specifically, matching circuit 41 is connected between low-noise amplifier 21 and switch 53. Matching circuit 41 achieves impedance matching between low-noise amplifier 21 and the receiving filter 61R of bidirectional amplifier 61 and the receiving filter 62R of bidirectional amplifier 62.

[0076] Matching circuit 71 is connected to bidirectional circuit 61. Specifically, matching circuit 71 is connected between transmit filter 61T and receive filter 61R and switch 51 respectively. Matching circuit 71 achieves impedance matching between transmit filter 61T and receive filter 61R and antenna 2 and switch 51 respectively.

[0077] Matching circuit 72 is connected to bidirectional circuit 62. Specifically, matching circuit 72 is connected between transmit filter 62T and receive filter 62R and switch 51 respectively. Matching circuit 72 achieves impedance matching between transmit filter 62T and receive filter 62R and antenna 2 and switch 51 respectively.

[0078] Furthermore, matching circuits 31, 41, 71, and 72 are formed using at least one inductor, capacitor, and resistor, respectively. For example, matching circuits 31, 41, 71, and 72 each include a chip inductor. Alternatively, matching circuits may be provided between switch 52 and each of the transmitting filters 61T and 62T, in addition to matching circuit 31. Similarly, matching circuits may be provided between switch 53 and each of the receiving filters 61R and 62R, in addition to matching circuit 41. Furthermore, matching circuits may be provided between switch 51 and filter 60L, in addition to matching circuits 71 and 72. Additionally, a matching circuit may be provided between antenna connection terminal 100 and filter 60L.

[0079] Furthermore, the circuit structure of high-frequency module 1 is not limited to Figure 1 The example shown. For example, the high-frequency module 1 may also include at least one of a transmitting circuit and a receiving circuit for processing the high-frequency signal passing through the filter 60H of the duplexer 60. Alternatively, the high-frequency module 1 may also include external connection terminals for inputting and / or outputting the high-frequency signal passing through the filter 60H from the transmitting circuit to the receiving circuit.

[0080] also, Figure 1 Several of the circuit elements shown may not be included in the high-frequency module 1. For example, the high-frequency module 1 may not have at least one of the matching circuits 31, 41, 71, and 72. Furthermore, the high-frequency module 1 may not have the duplexer 60.

[0081] [2. Component Configuration of High-Frequency Module]

[0082] Next, several embodiments of the component configuration of the high-frequency module 1 as described above will be described.

[0083] [2-1. Example 1]

[0084] First, using Figure 2 as well as Figure 3 Example 1 of the component configuration will be described. Figure 2 This is a top view of the high-frequency module 1 involved in Embodiment 1. Specifically, Figure 2 (a) shows a view of the main surface 91a of the module substrate 91 as viewed from the z-axis positive side. Figure 2 (b) is a view of the main surface 91b of the module substrate 91 from the z-axis positive side. Figure 3 This is a cross-sectional view of the high-frequency module 1 involved in Embodiment 1. Figure 3 The cross-section of the high-frequency module 1 in the middle is Figure 2 The cross section at line III-III.

[0085] like Figure 2 as well as Figure 3 As shown, the high-frequency module 1, in addition to having, includes Figure 1 In addition to the circuit elements shown, the system includes multiple circuit components, a module substrate 91, resin components 92 and 93, a metal shielding layer 95, and multiple external connection terminals 150. Furthermore, in... Figure 2 The illustrations of resin components 92 and 93, and the upper part of the metal shielding layer 95 are omitted.

[0086] In addition, such as Figure 2 (a) and Figure 3 As shown, the high-frequency module 1 includes sub-module components 190 and 290. Sub-module components 190 and 290 are examples of more than one module component. Figure 1 At least a portion of the circuit elements shown are included in submodule components 190 and 290. The specific structure of submodule components 190 and 290 will be described later.

[0087] The module substrate 91 is an example of the first substrate, having a main surface 91a and a main surface 91b opposite to the main surface 91a. In this embodiment, the module substrate 91 has a rectangular shape when viewed from above, but the shape of the module substrate 91 is not limited to this. As the module substrate 91, for example, a low-temperature co-fired ceramic (LTCC) substrate with a multi-dielectric layer stacked structure, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed substrate can be used, but it is not limited to these.

[0088] Principal face 91a is an example of the first principal face, sometimes referred to as the upper surface or surface. (See example...) Figure 2 As shown in (a), submodule components 190 and 290, and matching circuit 41 are arranged on the main surface 91a.

[0089] Main face 91b is an example of the second main face, sometimes referred to as the lower surface or back face. (See example...) Figure 2 As shown in (b), a PA control circuit 12, a semiconductor integrated circuit 20, switches 51 and 52, and multiple external connection terminals 150 are arranged on the main surface 91b.

[0090] The semiconductor integrated circuit 20 is an electronic component having electronic circuitry formed on and inside the surface of a semiconductor chip (also known as a die). In this embodiment, the semiconductor integrated circuit 20 includes a low-noise amplifier 21 and a switch 53. The semiconductor integrated circuit 20 is constructed, for example, using CMOS, and specifically, it can also be constructed using SOI technology. This allows for the inexpensive manufacture of the semiconductor integrated circuit 20. Furthermore, the semiconductor integrated circuit 20 can also be constructed from at least one of GaAs, SiGe, and GaN. This enables the realization of a high-quality semiconductor integrated circuit 20.

[0091] Multiple external connection terminals 150, in addition to including Figure 1 In addition to the antenna connection terminal 100, high-frequency input terminal 111, control input terminal 112, power supply terminal 113, and high-frequency output terminal 121 shown, a ground terminal is also included. Multiple external connection terminals 150 are each connected to input / output terminals and / or ground terminals disposed on the mother substrate on the negative z-axis side of the high-frequency module 1. The multiple external connection terminals 150 are, for example, pillar electrodes penetrating the resin member 93, but are not limited thereto.

[0092] Resin component 92 is an example of a first resin component, disposed on and covering the main surface 91a of the module substrate 91. Specifically, resin component 92 is configured to cover the area of ​​the main surface 91a where sub-module components 190 and 290 are not disposed. Resin component 92 covers the matching circuit 41 disposed in this area. In addition, resin component 92 covers the respective side surfaces of sub-module components 190 and 290.

[0093] A resin component 93 is disposed on and covers the main surface 91b of the module substrate 91. Specifically, the resin component 93 is disposed on the entire surface of the main surface 91b and covers the PA control circuit 12, semiconductor integrated circuit 20, switches 51 and 52 disposed on the main surface 91b. In this embodiment, a plurality of external connection terminals 150 are provided, which penetrate the resin component 93.

[0094] Metal shielding layer 95 is an example of a first metal shielding layer, covering the top surface of resin component 92 and the top surfaces of submodule components 190 and 290 respectively. Metal shielding layer 95 also covers the sides of resin component 92, the sides of submodule components 190 and 290 respectively, the sides of module substrate 91, and the sides of resin component 93. Metal shielding layer 95 is, for example, a thin metal film formed by sputtering. Metal shielding layer 95 is set to a ground potential to suppress external noise from intruding into the circuit components constituting high-frequency module 1.

[0095] Submodule component 190 is an example of the second module component. Submodule component 190, in addition to having... Figure 1In addition to at least one of the circuit elements shown, the submodule component 190 also includes a submodule substrate 191, resin components 192 and 193, and a side shielding layer 194. The submodule component 190 includes... Figure 1 The circuit elements shown include the power amplifier 11 and the matching circuit 31.

[0096] Submodule substrate 191 is an example of a second substrate, having a main surface 191a and a main surface 191b opposite to the main surface 191a. In this embodiment, submodule substrate 191 has a rectangular shape in top view, but the shape of submodule substrate 191 is not limited thereto. Figure 2 In (a), a dotted grid is marked to make the area occupied by the submodule substrate 191 easy to understand. The submodule substrate 191 shares three sides with the module substrate 91 when viewed from above (specifically, the entirety of one side and a portion of two sides). The submodule substrate 191 can be, for example, a low-temperature co-fired ceramic substrate with a multilayer dielectric structure, a high-temperature co-fired ceramic substrate, a component-embedded substrate, a substrate with a redistribution layer, or a printed circuit board, but is not limited to these.

[0097] Principal face 191a is an example of the third principal face, sometimes referred to as the upper surface or surface. (See example...) Figure 2 As shown in (a), a power amplifier 11 and a matching circuit 31 are arranged on the main surface 191a.

[0098] Power amplifier 11 is an example of the first circuit component. In this embodiment, as... Figure 3 As shown, the top surface of the power amplifier 11 is in contact with the metal shielding layer 95. Alternatively, the side surface of the power amplifier 11 can also be in contact with the metal shielding layer 95.

[0099] Matching circuit 31 is an example of the second circuit component. Alternatively, matching circuit 31 can also be disposed on main surface 191b. At least one of the top surface and side surface of matching circuit 31 may or may not be connected to the metal shielding layer 95.

[0100] Main surface 191b is an example of the fourth main surface, sometimes referred to as the lower surface or back surface. Main surface 191b faces the main surface 91a of the module substrate 91. No circuit components are disposed on main surface 191b, but one or more electrode terminals for electrical connection with the module substrate 91 are disposed thereon.

[0101] Resin component 192 is an example of a second resin component, disposed on and covering the main surface 191a of the submodule substrate 191. Specifically, resin component 192 is configured to cover the area of ​​the main surface 191a where the power amplifier 11 is not disposed. Resin component 192 covers the matching circuit 31 disposed in this area. Additionally, as... Figure 3 As shown, when there is a gap between the power amplifier 11 and the main surface 191a, the resin component 192 can also be configured to fill the gap.

[0102] Resin component 193 is an example of a third resin component, disposed on and covering the main surface 191b of the submodule substrate 191. Specifically, resin component 193 is disposed on the entire surface of the main surface 191b. In this embodiment, a plurality of electrode terminals are provided, such that they penetrate the resin component 193.

[0103] Side shielding layer 194 is an example of a second metal shielding layer, covering the sides of resin component 192, the sides of submodule substrate 191, and the sides of resin component 193. For example... Figure 3 As shown, the upper end face (top side end face) of the side shielding layer 194 is in contact with the metal shielding layer 95. Furthermore, the lower end face of the side shielding layer 194 is in contact with the main surface 91a of the module substrate 91. The side shielding layer 194 is, for example, a metal thin film formed by sputtering.

[0104] like Figure 2 As shown in (a), the side shielding layer 194 is disposed along one side of the rectangular submodule component 190 in top view. Thus, the power amplifier 11 and matching circuit 31 included in the submodule component 190 are surrounded by the side shielding layer 194 and the metal shielding layer 95 in top view. The side shielding layer 194 is set to ground potential, thereby suppressing electric field coupling, magnetic field coupling, and electromagnetic field coupling between the circuit components included in the submodule component 190 and other circuit components.

[0105] Alternatively, the side shielding layer 194 can cover each of the four sides of the submodule component 190. In this case, the side shielding layer 194 and the metal shielding layer 95 are configured as a double layer, which can more effectively suppress the intrusion of external noise.

[0106] Furthermore, in this embodiment, the top surface of the submodule component 190 is a plane, and its entire surface is in contact with the metal shielding layer 95. Specifically, the top surface of the power amplifier 11, the top surface of the resin component 192, and the upper end surface of the side shielding layer 194 are flush with each other and are in contact with the metal shielding layer 95.

[0107] Submodule component 290 is an example of the first module component. Submodule component 290, in addition to having... Figure 1 In addition to at least one of the circuit elements shown, the submodule component 290 also includes a submodule substrate 291, resin components 292 and 293, and a side shielding layer 294. The submodule component 290 includes... Figure 1 The circuit elements shown include duplexer 60, bidirectional circuits 61 and 62, and matching circuits 71 and 72.

[0108] Submodule substrate 291 is an example of a second substrate, having a main surface 291a and a main surface 291b opposite to the main surface 291a. In this embodiment, submodule substrate 291 has a rectangular shape when viewed from above, but the shape of submodule substrate 291 is not limited to this. Figure 2 In (a), a grid of diagonal dashed lines is used to make the area occupied by the submodule substrate 291 easier to understand. The submodule substrate 291 shares a portion of two sides with the module substrate 91 when viewed from above. The submodule substrate 291 can be, for example, a low-temperature co-fired ceramic substrate with a multilayer dielectric structure, a high-temperature co-fired ceramic substrate, a component-embedded substrate, a substrate with a redistribution layer, or a printed circuit board, but is not limited to these.

[0109] Principal face 291a is an example of the third principal face, sometimes referred to as the top surface or surface. (See example...) Figure 2 As shown in (a), a duplexer 60, a bidirectional circuit 61 and 62, and a matching circuit 71 and 72 are arranged on the main surface 291a.

[0110] Bidirectional circuits 61 and 62 and duplexer 60 are examples of the first circuit component. In this embodiment, as... Figure 3 As shown, the top surface of bidirectional transducer 61 is in contact with the metal shielding layer 95. Although not shown, the top surfaces of bidirectional transducers 62 and 60 are also in contact with the metal shielding layer 95. Alternatively, the side surfaces of bidirectional transducers 61 or 62, or 60, may also be in contact with the metal shielding layer 95. Furthermore, bidirectional transducers 62 and 60 may also be examples of a second circuit component, where their top surfaces may not be in contact with the metal shielding layer 95. Additionally, bidirectional transducers 62 and 60 may be disposed on the main surface 291b.

[0111] Matching circuits 71 and 72 are an example of the second circuit component. Alternatively, matching circuits 71 and 72 may also be disposed on the main surface 291b. At least one of the top surface and side surface of each matching circuit 71 and 72 may or may not be connected to the metal shielding layer 95.

[0112] Main surface 291b is an example of a fourth main surface, sometimes referred to as the lower surface or back surface. Main surface 291b faces the main surface 91a of the module substrate 91. No circuit components are disposed on main surface 291b, but one or more electrode terminals for electrical connection with the module substrate 91 are disposed thereon.

[0113] Resin component 292 is an example of a second resin component, disposed on and covering the main surface 291a of the submodule substrate 291. Specifically, resin component 292 is configured to cover the area of ​​the main surface 291a where duplexers 60 and bidirectional circuits 61 and 62 are not disposed. Resin component 292 covers the matching circuits 71 and 72 disposed in this area. Additionally, as... Figure 3 As shown, when a gap is provided between the duplexer 61 and the main surface 291a, the resin member 292 can also be configured to fill the gap. The same applies to the duplexer 60 and the duplexer 62.

[0114] Resin component 293 is an example of a third resin component, disposed on and covering the main surface 291b of the submodule substrate 291. Specifically, resin component 293 is disposed on the entire surface of the main surface 291b. In this embodiment, a plurality of electrode terminals are provided, such that they penetrate the resin component 293.

[0115] Side shielding layer 294 is an example of a second metal shielding layer, covering the sides of resin component 292, the sides of submodule substrate 291, and the sides of resin component 293. Figure 3 As shown, the upper end face (top side end face) of the side shielding layer 294 is in contact with the metal shielding layer 95. Furthermore, the lower end face of the side shielding layer 294 is in contact with the main surface 91a of the module substrate 91. The side shielding layer 294 is, for example, a metal thin film formed by sputtering.

[0116] like Figure 2 As shown in (a), the side shielding layer 294 is L-shaped along the two sides of the rectangular submodule component 290 in top view. Thus, the duplexer 60, bidirectional circuits 61 and 62, and matching circuits 71 and 72 included in the submodule component 290 are surrounded by the side shielding layer 294 and the metal shielding layer 95 in top view. The side shielding layer 294 is set to ground potential, thereby suppressing electric field coupling, magnetic field coupling, and electromagnetic field coupling between the circuit components included in the submodule component 290 and other circuit components.

[0117] Alternatively, the side shielding layer 294 can also cover each of the four sides of the submodule component 290. In this case, the side shielding layer 294 and the metal shielding layer 95 are configured as a double layer, which can more effectively suppress the intrusion of external noise.

[0118] Furthermore, in this embodiment, the top surface of the submodule component 290 is a plane, and its entire surface is in contact with the metal shielding layer 95. Specifically, the top surfaces of the duplexer 60, the top surfaces of the bidirectional devices 61 and 62, the top surface of the resin component 292, and the upper surface of the side shielding layer 294 are flush with each other and are in contact with the metal shielding layer 95.

[0119] In this embodiment, the top surfaces of submodule components 190 and 290 and resin component 92 are flush. The flush top surfaces (i.e., flat surfaces) are formed by placing submodule components 190 and 290 and matching circuit 41 on the main surface 91a of module substrate 91, molding them with resin material that forms the basis of resin component 92, curing the resin material, and then grinding the cured resin material from the top surface side. By grinding, the top surfaces of submodule components 190 and 290 are exposed, or by further grinding the exposed top surfaces of submodule components 190 and 290, thereby making the top surfaces of submodule components 190 and 290 and resin component 92 flush.

[0120] Additionally, when side shielding layers 194 and 294 are formed on the top surfaces of submodule components 190 and 290, metal shielding layers may also be formed simultaneously. The metal shielding layers formed on the top surfaces of submodule components 190 and 290 may be removed by grinding, but they may also remain. That is, the metal shielding layers and metal shielding layers 95 provided on the top surfaces of submodule components 190 and 290 may also be grounded together.

[0121] [2-2. Example 2]

[0122] Next, using Figure 4 as well as Figure 5 Example 2 of the component configuration will be described. Figure 4 This is a top view of the high-frequency module 1A involved in Embodiment 2. Specifically, Figure 4 (a) shows a view of the main surface 91a of the module substrate 91 as viewed from the z-axis positive side. Figure 4 (b) shows a view of the main surface 91b of the module substrate 91 from the z-axis positive side. Figure 5 This is a cross-sectional view of the high-frequency module 1A involved in Embodiment 2. Figure 5 The cross-section of the high-frequency module 1A in the middle is Figure 4 The cross-section at the VV line.

[0123] like Figure 4 as well as Figure 5 As shown, the high-frequency module 1A involved in Embodiment 2 differs from that in Embodiment 1 mainly in that it has one sub-module component 290A instead of two sub-module components 190 and 290.

[0124] like Figure 4As shown in (a), the submodule component 290A is disposed near the center of the main surface 91a of the module substrate 91. Specifically, in top view, the submodule component 290A does not share an edge with the module substrate 91. Therefore, the side shielding layer 294A of the submodule component 290A is configured as a rectangular ring that covers the entire circumference of the submodule component 290A in top view. That is, the side shielding layer 294A is disposed on all four sides of the submodule component 290A.

[0125] Furthermore, submodule component 290A does not include duplexer 60. Duplexer 60 is disposed on the main surface 91a of module substrate 91. In addition, in this embodiment, power amplifier 11 and matching circuit 31 are disposed on the main surface 91a of module substrate 91.

[0126] In addition, the high-frequency module 1A has two dummy components 81 and 82. Dummy components 81 and 82 are, for example, conductive components set to ground potential. Dummy components 81 and 82 can be either welded metal plates or metal layers grown by plating.

[0127] Dummy components 81 and 82, viewed from above, are respectively disposed between the side shielding layer 294A and the metal shielding layer 95 of the submodule component 290A. For example, dummy component 81 is configured to fill more than half of the space between the side shielding layer 294A and the metal shielding layer 95. Specifically, considering the length along the y-axis, the width of dummy component 81 (the length along the y-axis) is longer than the combined length of the spacing between dummy component 81 and the metal shielding layer 95 and the spacing between dummy component 81 and the side shielding layer 294A. Furthermore, dummy component 81 may also be connected to at least one of the side shielding layer 294A and the metal shielding layer 95. The same applies to dummy component 82.

[0128] The dummy component 81 is positioned between the matching circuit 41 and the power amplifier 11 when viewed from above. Therefore, the dummy component 81 can suppress electric field coupling, magnetic field coupling, and electromagnetic field coupling between the power amplifier 11 and the matching circuit 41. This improves the isolation between the transmitter and receiver.

[0129] The dummy component 82 is positioned between the matching circuit 31 or power amplifier 11 and the duplexer 60 when viewed from above. Thus, the electric field coupling, magnetic field coupling, and electromagnetic field coupling between the matching circuit 31 or power amplifier 11 and the duplexer 60 can be suppressed by the dummy component 82.

[0130] Furthermore, as in this embodiment, when the high-frequency module 1A has only one sub-module component, the types of circuit elements included in that sub-module component are not particularly limited. For example, the high-frequency module 1A may replace the sub-module component 290A with a sub-module component 190 that includes a power amplifier 11.

[0131] [2-3. Example 3]

[0132] Next, using Figure 6 Example 3 of the component configuration will be described. Figure 6 This is a top view of the high-frequency module 1B involved in Embodiment 3.

[0133] like Figure 6 As shown, the high-frequency module 1B involved in Embodiment 3 differs from that in Embodiment 1 mainly in that... Figure 1 All circuit elements shown (except for the terminals) are arranged on the main surface 91a. That is, the high-frequency module 1B is a module that is mounted on one side.

[0134] Specifically, such as Figure 6 As shown, the high-frequency module 1B includes sub-module components 190B and 290B.

[0135] Submodule component 190B includes a power amplifier 11, a PA control circuit 12, a matching circuit 31, and a switch 52. Here, the PA control circuit 12, the matching circuit 31, and the switch 52 are examples of the second circuit component.

[0136] Submodule component 290B includes a duplexer 60, a switch 51, bidirectional circuits 61 and 62, and matching circuits 71 and 72. Here, switch 51 and matching circuits 71 and 72 are examples of the second circuit component.

[0137] In this embodiment, the semiconductor integrated circuit 20, which includes a low-noise amplifier 21 and a switch 53, and the matching circuit 41 are directly disposed on the main surface 91a of the module substrate 91.

[0138] Alternatively, in this embodiment, the high-frequency module 1B may not have the sub-module component 190B. Specifically, the power amplifier 11, PA control circuit 12, matching circuit 31, and switch 52 may be directly disposed on the main surface 91a of the module substrate 91. Alternatively, the high-frequency module 1B may not have the sub-module component 290B. Specifically, the duplexer 60, bidirectional circuits 61 and 62, and matching circuits 71 and 72 may be directly disposed on the main surface 91a of the module substrate 91. Furthermore, the high-frequency module 1B may also have a sub-module component including a semiconductor integrated circuit 20 and a matching circuit 41, wherein the semiconductor integrated circuit 20 includes a low-noise amplifier 21 and a switch 53.

[0139] [3. Effects, etc.]

[0140] As described above, the high-frequency module 1 according to this embodiment includes: a module substrate 91 having main surfaces 91a and 91b; one or more module components disposed on the main surface 91a; a resin member 92 covering the main surface 91a; and a metal shielding layer 95 covering the top surfaces of the resin member 92 and the one or more module components, and is set to a ground potential. The sub-module component 190, as one of the one or more module components, includes: a sub-module substrate 191 having main surfaces 191a and 191b; a first circuit component disposed on the main surface 191a; one or more second circuit components disposed on either the main surface 191a or 191b; a resin member 192 covering the main surface 191a; and a side shielding layer 194 covering the side surfaces of the resin member 192 and the sub-module substrate 191, and is set to a ground potential. The top surface end face of the side shielding layer 194 is in contact with the metal shielding layer 95.

[0141] Therefore, the side shielding layer 194 of the submodule component 190 functions as a shielding member to suppress electric field coupling, magnetic field coupling, and electromagnetic field coupling between components. That is, without the need to prepare additional shielding members, simply mounting the submodule component 190 onto the main surface 91a can suppress electric field coupling, magnetic field coupling, and electromagnetic field coupling between the circuit components disposed on the submodule component 190 and the circuit components disposed on other submodule components and the module substrate 91. Therefore, it is possible to suppress the inflow of noise into the high-frequency signals processed by each component. The process of forming additional shielding members can be omitted, thus simplifying the manufacturing process of the high-frequency module 1.

[0142] For example, it is possible to suppress a portion of the high-power transmitted signal from flowing into the receiving path as noise, thereby improving the frequency response (NF). Furthermore, for example, it is possible to suppress harmonic distortion of the transmitted signal generated by the power amplifier 11 from winding through the switch 51, duplexer 60, and matching circuits 71 and 72, and from being transmitted from the antenna 2. In this way, the high-frequency module 1 according to this embodiment can easily improve electrical characteristics.

[0143] Furthermore, for example, by covering the entire side of the submodule component 290A with a side shielding layer 294A, as in Embodiment 2, electric field coupling, magnetic field coupling, and electromagnetic field coupling between the circuit components and other components included in the submodule component 290A can be suppressed regardless of the configuration position of the submodule component 290A. Therefore, by pre-unifying the components for which electric field coupling, magnetic field coupling, and electromagnetic field coupling to be suppressed with other components in the submodule component 290A, electric field coupling, magnetic field coupling, and electromagnetic field coupling with other components can be easily suppressed. Since the degree of freedom in the configuration position of the submodule component 290A can also be increased, the design freedom for the component configuration of the module substrate 91 is improved, and miniaturization can also be contributed to.

[0144] Furthermore, for example, submodule component 190 also has a resin member 193 covering the main surface 191b. Side shielding layer 194 also covers the sides of resin member 193.

[0145] This improves the shielding function of the side shielding layer 194, namely, its ability to suppress electric field coupling, magnetic field coupling, and electromagnetic field coupling with other components. Consequently, the electrical characteristics of the high-frequency module 1 are further enhanced.

[0146] Furthermore, for example, when the main surface 191b faces the main surface 91a, the top surface of the first circuit component is in contact with the metal shielding layer 95.

[0147] This allows heat generated by the first circuit component to be easily transferred to and released by the metal shielding layer 95. Therefore, the heat dissipation performance of the submodule component 190 can be improved. Furthermore, by eliminating the gap between the first circuit component and the metal shielding layer 95, the height of the high-frequency module 1 can be reduced.

[0148] In addition, for example, the side shielding layer 194 is in contact with the main surface 91a.

[0149] This further enhances the shielding function of the side shielding layer 194. Consequently, it further improves the electrical characteristics of the high-frequency module 1.

[0150] In addition, for example, the top surface of resin component 92, the top surface of resin component 192, and the upper surface of side shielding layer 194 are flush.

[0151] This allows the top surface of the metal shielding layer 95 to become flat, thus enabling the formation of a metal shielding layer 95 with fewer breaks and of excellent quality. Therefore, the shielding function is improved, and the electrical characteristics of the high-frequency module 1 are enhanced.

[0152] Furthermore, for example, a first circuit component of submodule component 290, which is one of more than one module components, is a bidirectional device 61 having a passband that includes communication frequency band A. Furthermore, for example, one or more second circuit components of submodule component 290 include a matching circuit 71 connected to the first filter (specifically, the bidirectional device 61). Furthermore, for example, one or more second circuit components of submodule component 290 include a second filter (specifically, the bidirectional device 62) having a passband that includes communication frequency band B.

[0153] Therefore, electric field coupling, magnetic field coupling, and electromagnetic field coupling between the power amplifier 11 and / or matching circuit 31 and the bidirectional circuits 61, 62 and / or matching circuit 71 included in the submodule component 290 can be suppressed. Thus, it is possible to suppress a portion of the high-power transmitted signal from flowing into the receiving path as noise. Consequently, the isolation between the transmitter and receiver can be improved, and the electrical characteristics of the high-frequency module 1 can be enhanced.

[0154] In addition, for example, such as Figure 6 As shown, one or more second circuit components of submodule component 290B, which is one or more module components, include switch 51, which is connected between antenna connection terminal 100 and bidirectional devices 61 and 62 respectively.

[0155] Therefore, electric field coupling, magnetic field coupling, and electromagnetic field coupling between switch 51 and power amplifier 11 can be suppressed. Thus, for example, it is possible to suppress harmonic distortion of the transmitted signal generated by power amplifier 11 from winding through switch 51 and being transmitted from antenna 2.

[0156] Furthermore, for example, the first circuit component of submodule component 190B, which is one of more than one module components, is a power amplifier 11. One or more second circuit components of submodule component 190B include a switch 52 connected between the bidirectional transceivers 61 and 62 and the power amplifier 11. Furthermore, for example, one or more second circuit components of submodule component 190B is a PA control circuit 12 that controls the power amplifier 11.

[0157] Therefore, since the power amplifier 11, switch 52, and / or PA control circuit 12 are included in the submodule component 190B, it is possible to suppress a portion of the high-power transmitted signal from flowing as noise into the receiving path located outside the submodule component 190B. Consequently, the isolation between the transmitter and receiver can be improved, and the electrical characteristics of the high-frequency module 1B can be enhanced.

[0158] Furthermore, for example, the high-frequency module 1B also includes a low-noise amplifier 21 and a switch 53 connected to the low-noise amplifier 21, respectively, for the bidirectional transceivers 61 and 62. The low-noise amplifier 21 and the switch 53 are disposed on the main surface 91a.

[0159] This enables single-sided mounting of the module substrate 91, thus allowing for a lower height of the high-frequency module 1B.

[0160] In addition, for example, such as Figure 2 (b) or Figure 4As shown in (b), the first circuit component of submodule component 190, which is one of more than one module components, is power amplifier 11. The high-frequency module 1 also includes: a low-noise amplifier 21; a switch 51 connected between antenna connection terminal 100 and each of bidirectional amplifiers 61 and 62; a switch 52 connected between each of bidirectional amplifiers 61 and 62 and power amplifier 11; and a switch 53 connected between each of bidirectional amplifiers 61 and 62 and low-noise amplifier 21. Low-noise amplifier 21 and switches 51-53 are disposed on main surface 91b. Furthermore, for example, the high-frequency module 1 or 1A also includes a PA control circuit 12 disposed on main surface 91b for controlling power amplifier 11.

[0161] This enables mounting on both sides of the module substrate 91, thus allowing for the miniaturization of the high-frequency module 1 or 1A.

[0162] Furthermore, for example, as described above, the first filter and the second filter are bidirectional devices 61 and 62, respectively.

[0163] This improves the isolation between the transmitter and receiver, and enhances the electrical characteristics of the high-frequency module 1.

[0164] In addition, for example, such as Figure 2 As shown, the first circuit component of submodule component 190, which is one of more than one module components, is a power amplifier 11. Furthermore, for example, one or more second circuit components of submodule component 190 may include a matching circuit 31 connected to the output terminal of the power amplifier 11.

[0165] This allows for the suppression of a portion of the high-power transmitted signal from flowing into the receiving path as noise. Consequently, it improves the isolation between the transmitter and receiver, thereby enhancing the electrical characteristics of the high-frequency module 1.

[0166] Furthermore, for example, the communication device 5 according to this embodiment includes: RFIC3, which processes high-frequency signals transmitted and received by antenna 2; and high-frequency module 1, which transmits high-frequency signals between antenna 2 and RFIC3.

[0167] Thus, the same effect as the high-frequency module 1 described above can be obtained.

[0168] (other)

[0169] The high-frequency module and communication device of the present invention have been described above based on the above embodiments, but the present invention is not limited to the above embodiments.

[0170] For example, the submodule component 190 may not have a resin member 193 covering the main surface 191b. In this case, the side shielding layer 194 may not be in contact with the main surface 91a of the module substrate 91. If a gap is provided between the main surface 191b of the submodule substrate 191 and the main surface 91a of the module substrate 91, the resin member 92 may be configured to fill the gap.

[0171] Furthermore, for example, the submodule component 190 may not have circuit components disposed on the main surface 191a. All circuit components and terminals included in the submodule component 190 may also be disposed only on the main surface 191b. In this case, the main surface 191b facing the main surface 91a of the module substrate 91 is an example of a third main surface, and the main surface 191a is an example of a fourth main surface. At this time, the main surface 191a of the submodule component 190 is in contact with the metal shielding layer 95. That is, the main surface 191a and the upper surface of the side shielding layer 194 are flush.

[0172] Furthermore, the variations applicable to submodule component 190 can also be applied to submodule components 190B, 290, 290A, and 290B.

[0173] Furthermore, for example, the top surface of power amplifier 11 may not be connected to the metal shielding layer 95. The top surfaces of duplexer 60 and bidirectional circuits 61 and 62 may also not be connected to the metal shielding layer 95. Alternatively, the top surface of at least one of the PA control circuit 12, matching circuits 31, 71 and 72, and switches 51 and 52 may be connected to the metal shielding layer 95. Furthermore, when the semiconductor integrated circuit 20 containing the low-noise amplifier 21 and switch 53, and the matching circuit 41 are included in the submodule component, at least one of the semiconductor integrated circuit 20 and the matching circuit 41 may or may not be connected to the metal shielding layer 95.

[0174] Furthermore, there are no particular limitations on the combination, number, and arrangement of circuit elements included in submodule components 190, 190B, 290, 290A, or 290B. Circuit elements not included in the submodule components may also be arranged on any of the main surfaces 91a and 91b of the module substrate 91.

[0175] Furthermore, for example, the external connection terminal 150 can be either a bump electrode or a planar electrode. Similarly, the electrode terminals of the submodule components 190, 190B, 290, 290A, or 290B can also be either post electrodes, bump electrodes, or planar electrodes.

[0176] In addition, the present invention also includes various modifications to the embodiments that can be conceived by those skilled in the art, and the implementation of the embodiments by arbitrarily combining the constituent elements and functions of the embodiments without departing from the spirit of the present invention.

[0177] Industrial availability

[0178] This invention can be used as a high-frequency module configured in the front end of communication devices such as portable telephones.

[0179] Explanation of reference numerals in the attached figures

[0180] 1.1 A, 1B high-frequency modules;

[0181] 2 antennas;

[0182] 3RFIC;

[0183] 4BBIC;

[0184] 5 communication devices;

[0185] 11 power amplifiers;

[0186] 12PA control circuit;

[0187] 20. Semiconductor integrated circuits;

[0188] 21 Low-noise amplifier;

[0189] Matching circuits for 31, 41, 71, and 72;

[0190] Switches 51, 52, and 53;

[0191] 60 duplexers;

[0192] 61, 62 bidirectional devices;

[0193] 60H and 60L filters;

[0194] 61R and 62R receiver filters;

[0195] 61T and 62T transmitting filters;

[0196] 81 and 82 are dummy components;

[0197] 91 module baseboard;

[0198] Main faces: 91a, 91b, 191a, 191b, 291a, 291b;

[0199] 92, 93, 192, 193, 292, 293 resin components;

[0200] 95% metal shielding layer;

[0201] 194, 294, 294A side shielding layers;

[0202] 100 antenna connection terminal;

[0203] 111 high-frequency input terminal;

[0204] 112 control input terminals;

[0205] 113 power supply terminal;

[0206] 121 high-frequency output terminal;

[0207] 150 external connection terminals;

[0208] Sub-module components 190, 190B, 290, 290A, and 290B;

[0209] Sub-module baseboards 191 and 291;

[0210] 511, 512, 513, 521, 522, 523, 531, 532, 533 terminals.

Claims

1. A high-frequency module, comprising: The first substrate has a first main surface and a second main surface opposite to the first main surface; One or more module components are configured on the first main surface; A first resin component, covering the first main surface; and A first metal shielding layer, covering the top surface of the first resin component and each of the one or more module components, is set to ground potential. Each of the one or more module components has: The second substrate has a third main surface and a fourth main surface opposite to the third main surface; The first circuit component is disposed on the third main surface; One or more second circuit components are disposed on the third main surface or the fourth main surface; A second resin component covers the third main surface; and A second metal shielding layer, covering the sides of both the second resin component and the second substrate, is set to a ground potential. The top surface of the second metal shielding layer is in contact with the first metal shielding layer. Each of the one or more module components also has a third resin component covering the fourth main surface. The second metal shielding layer also covers the side of the third resin component.

2. The high-frequency module according to claim 1, wherein, The fourth main surface faces the first main surface. The top surface of the first circuit component is in contact with the first metal shielding layer.

3. The high-frequency module according to claim 1 or 2, wherein, The second metal shielding layer is in contact with the first main surface.

4. The high-frequency module according to claim 1 or 2, wherein, The top surface of the first resin component, the top surface of the second resin component, and the end face of the second metal shielding layer are flush.

5. The high-frequency module according to claim 1 or 2, wherein, The first circuit component of the first module component, which is one of the more than one module components, is a first filter having a passband that includes a first communication frequency band.

6. The high-frequency module according to claim 5, wherein, The one or more second circuit components of the first module component include a matching circuit connected to the first filter.

7. The high-frequency module according to claim 5, wherein, The one or more second circuit components of the first module component include a second filter having a passband that includes a second communication frequency band different from the first communication frequency band.

8. The high-frequency module according to claim 7, wherein, The one or more second circuit components of the first module component include a first switch connected between the antenna connection terminal and each of the first filter and the second filter.

9. The high-frequency module according to claim 7, wherein, The first circuit component of the second module component, which is one of the more than one module components, is a power amplifier. The one or more second circuit components of the second module component include a second switch connected between the first filter and the second filter and the power amplifier, respectively.

10. The high-frequency module according to claim 9, wherein, The one or more second circuit components of the second module component are control circuits that control the power amplifier.

11. The high-frequency module according to any one of claims 7 to 10, wherein, The high-frequency module also features: Low-noise amplifier; and The third switch is connected to both the first filter and the second filter, and to the low-noise amplifier. The low-noise amplifier and the third switch are disposed on the first main surface.

12. The high-frequency module according to claim 7, wherein, The first circuit component of the second module component, which is one of the more than one module components, is a power amplifier. The high-frequency module also features: Low-noise amplifier; The first switch is connected between the antenna connection terminal and each of the first filter and the second filter; A second switch is connected between the first filter and the second filter, respectively, and the power amplifier; and The third switch is connected to both the first filter and the second filter, and to the low-noise amplifier. The low-noise amplifier, the first switch, the second switch, and the third switch are disposed on the second main surface.

13. The high-frequency module according to claim 12, wherein, The high-frequency module also includes a control circuit, configured on the second main surface, for controlling the power amplifier.

14. The high-frequency module according to any one of claims 7 to 10, wherein, The first filter and the second filter are both bidirectional filters.

15. The high-frequency module according to claim 1 or 2, wherein, The first circuit component of the second module component, which is one of the more than one module components, is a power amplifier.

16. The high-frequency module according to claim 15, wherein, The one or more second circuit components of the second module component include a matching circuit connected to the output terminal of the power amplifier.

17. A communication device comprising: RF signal processing circuitry processes high-frequency signals transmitted and received by the antenna; and The high-frequency module according to any one of claims 1 to 16 transmits the high-frequency signal between the antenna and the RF signal processing circuit.

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