Graphene processing device capable of providing low-energy implanted ions

Abstract

The present invention provides a graphene processing device capable of providing low-energy implanted ions, which includes a sample loading chamber, a processing chamber, and an isolation valve; the sample loading chamber includes a first cavity, a sample holder, and a sample transfer rod, and the sample holder is located in the first cavity; the processing chamber includes a second cavity, a sample stage, a plasma coil, and an upper electrode grid and a lower electrode grid; the sample stage, the upper electrode grid, and the lower electrode grid are located in the second cavity, and the upper electrode grid and the lower electrode are arranged at intervals up and down and are height-adjustable; the sample transfer rod can transfer the sample holder to the sample stage and / or transfer the sample holder out from the sample stage, and the plasma generated by the discharge of the plasma coil can pass through the upper electrode grid and the lower electrode grid to process the sample located on the sample holder in the processing chamber. The present invention can provide a high-quality plasma generation vacuum environment, reduce atmospheric environmental pollution, improve the efficiency of plasma generation, ensure the purity and reliability of the plasma, and meet different processing requirements.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor materials, and particularly to a graphene processing device capable of providing low-energy implanted ions. Background Art

[0002] Graphene is a new material with a single-layer two-dimensional honeycomb lattice structure formed by tightly packing carbon atoms connected by sp 2 hybridization. It has excellent optical, electrical, and mechanical properties and has important application prospects in materials science, micro-nano processing, energy, biomedicine, and drug delivery. It is considered a revolutionary material for the future. Graphene is harder than diamond and stronger than steel and can form the basis of next-generation technologies. However, the pencil lead graphite that makes up graphene lacks a property called a bandgap, which limits its ability to function as a semiconductor material. For this reason, scientists around the world have conducted various modification studies on graphene to try to expand its applications. For example, there are already successful cases in the prior art of using hydrogen plasma to chemically modify the surface of graphene to generate a bandgap in graphene. However, using traditional plasma processing equipment will cause irreversible etching and sputtering of graphene, which will seriously damage graphene within seconds or minutes, resulting in the rupture of graphene. Therefore, inventing a graphene plasma processing device that can control the properties of plasma by adjusting device parameters to perform more efficient graphene plasma processing has become an urgent technical problem in this field.

[0003] It should be noted that the above introduction to the technical background is only for the convenience of clearly and completely explaining the technical solution of the present application and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art just because these solutions are described in the background art part of the present application. Summary of the Invention

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a graphene processing device capable of providing low-energy implanted ions to solve the problems such as easy damage to graphene when using existing plasma processing equipment for graphene modification processing.

[0005] To achieve the above and other related objectives, the present invention provides a graphene processing device capable of providing low-energy implanted ions, including a sample loading chamber, a processing chamber, and an isolation valve disposed between the sample loading chamber and the processing chamber for controlling the on / off of the sample loading chamber and the processing chamber; the sample loading chamber includes a first cavity, a sample holder, and a sample transfer rod, and the sample holder is located within the first cavity; the processing chamber includes a second cavity, a sample stage, a plasma coil, and an upper electrode grid and a lower electrode grid through which plasma can pass; the sample stage, the upper electrode grid, and the lower electrode grid are located within the second cavity, and the upper electrode grid and the lower electrode are spaced apart vertically and their heights are adjustable; the sample transfer rod of the sample loading chamber can transfer the sample holder to the sample stage and / or remove the sample holder from the sample stage, and the plasma generated by the discharge of the plasma coil can pass through the upper electrode grid and the lower electrode grid to process the sample located on the sample holder within the processing chamber.

[0006] Optionally, transparent glass covers that can be opened and closed are provided at the tops of both the first cavity and the second cavity.

[0007] Optionally, vacuum suction cup handrails are provided on the covers of the sample chamber and / or the processing chamber.

[0008] Optionally, a heating device for heating the sample is provided on the second cavity.

[0009] Optionally, the heating device includes heating resistance wires and is located within the sample stage.

[0010] Optionally, both the upper electrode grid and the lower electrode grid include mesh-shaped electrodes and elastic expansion structures made of insulating materials located circumferentially around the electrodes, and the corresponding electrodes are fixed within the second cavity through the support of the elastic expansion structures.

[0011] Optionally, a number of functional flanges are provided on the first cavity and / or the second cavity.

[0012] Optionally, the graphene processing device includes a transmission device cabinet, a pump body is provided within the transmission device cabinet, the sample loading chamber, the processing chamber, and the isolation valve are located on the transmission device cabinet, and the sample stage of the processing chamber is connected to the transmission device within the transmission device cabinet, and the lifting and / or rotation of the sample stage can be achieved through the transmission device.

[0013] Optionally, the sample holder includes a chassis and a bracket fixedly connected to the chassis, the sample is placed on the chassis, and the sample transfer rod has a fork-shaped structural end that can lift the bracket.

[0014] Optionally, the sample loading chamber further includes a guide rail, and the sample transfer rod is disposed on the guide rail.

[0015] As described above, the graphene processing device capable of providing low-energy implanted ions of the present invention has the following beneficial effects: With the improved structural design of the present invention, by setting up two-stage vacuum environments of a sample placing chamber and a processing chamber, a high-quality plasma generation vacuum environment can be provided, further reducing atmospheric environmental pollution, enhancing the efficiency of plasma generation, and ensuring the purity and reliability of the plasma; the upper and lower electrode grids arranged at intervals can provide a parallel electric field in the vacuum environment, which can change the kinetic energy of the corresponding plasma to meet different plasma processing requirements. In addition, parameters such as the height and / or angle of the sample can be adjusted, thereby adjusting the sample processing environment. The overall structure of the device of the present invention is simple, with a high degree of integration and functional developability, which is conducive to large-scale promotion and application. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It shows a schematic diagram of the overall structure of the graphene processing device capable of providing low-energy implanted ions of the present invention.

[0017] Figure 2 It shows a front view of the graphene processing device capable of providing low-energy implanted ions of the present invention.

[0018] Figure 3 It shows a left view of the graphene processing device capable of providing low-energy implanted ions of the present invention.

[0019] Figure 4 It shows a top view of the graphene processing device capable of providing low-energy implanted ions of the present invention.

[0020] Figure 5 It shows a schematic diagram of the overall structure of the processing chamber of the graphene processing device capable of providing low-energy implanted ions of the present invention.

[0021] Figure 6 It shows Figure 5 A schematic cross-sectional structure diagram along line AA'.

[0022] Figure 7 It shows Figure 6 An enlarged schematic diagram.

[0023] Figure 8 It shows a front view of the sample placing chamber of the graphene processing device capable of providing low-energy implanted ions of the present invention.

[0024] Figure 9 It shows an axonometric view of the sample placing chamber of the graphene processing device capable of providing low-energy implanted ions of the present invention.

[0025] Figure 10 It shows an exemplary schematic diagram of the sample transfer rod of the sample placing chamber.

[0026] Figure 11Schematic diagram showing an exemplary structure of a sample holder shown as a lofting bin.

[0027] Figure 12 Schematic diagram showing a sample holder being conveyed by a sample transfer rod.

[0028] Figure 13 and Figure 14 Atomic force microscope images showing the use of existing equipment and the use of the present invention for graphene surface hydrogenation treatment.

[0029] Figures 15 to 18 Atomic force microscope images showing the use of the present invention for graphene bubble injection under different conditions. Detailed implementation manners

[0030] The following describes the implementation manners of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. When detailing the embodiments of the present invention, for the sake of illustration, the cross-sectional views showing the device structure will be enlarged locally out of the general scale, and the schematic diagrams are only examples and should not limit the scope of protection of the present invention here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0031] For the sake of convenience of description, spatial relationship terms such as "beneath", "below", "lower than", "under", "above", "on" may be used herein to describe the relationship between one element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to encompass other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or there can also be one or more intervening layers.

[0032] In the context of the present application, the structure in which the first feature is "above" the second feature described may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0033] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present invention. Therefore, only the components related to the present invention are shown in the drawings, rather than being drawn according to the number, shape, and size of the components in actual implementation. The types, quantities, and proportions of the components in actual implementation can be arbitrarily changed, and the component layout type may also be more complex. To make the illustrations as concise as possible, not all structures are labeled in each drawing.

[0034] As Figures 1 to 4 shown, the present invention provides a graphene processing device capable of providing low-energy implanted ions, including a sample loading chamber 1, a processing chamber 2, and an isolation valve 3 disposed between the sample loading chamber 1 and the processing chamber 2 for controlling the connection and disconnection between the sample loading chamber 1 and the processing chamber 2. That is, the sample loading chamber 1 and the processing chamber 2 are connected through a pipeline, and the isolation valve 3 is disposed on this pipeline. The isolation valve 3 can specifically be a gate valve, and it can be switched on and off through a gate valve control wheel 18 located above it and connected to it to control the connection and disconnection between the sample loading chamber 1 and the processing chamber 2, thereby isolating the environments of the sample loading chamber 1 and the processing chamber 2.

[0035] Specifically, referring to Figure 8 and 9 shown, the sample loading chamber 1 includes a first cavity 11, a sample holder 12, and a sample transfer rod 13, and the sample holder 12 is located inside the first cavity 11. A pipeline interface 15 for communicating with a pump body is provided on the first cavity 11, and in addition, an openable cover 14 may be provided. This pipeline interface 15 can be externally connected to an external pump body to adjust the vacuum degree of the sample loading chamber 1 when needed, for example, pumping the sample loading chamber 1 to a vacuum or inflating it to an atmospheric state. An air path flange 16 connected to an external air path may also be provided on the sample loading chamber 1 to input an inert gas into the sample loading chamber 1, such as nitrogen, argon, etc. This can not only restore the air pressure in the sample loading chamber 1 to normal pressure but also maintain an inert gas atmosphere in the sample loading chamber 1 to prevent sample contamination. In addition, the sample loading chamber 1 can also be heated by a heated inert gas to uniformly preheat the sample in the sample loading chamber 1.

[0036] The structure of the processing chamber 2 can be referred to Figures 5 to 7As shown in the figure, it specifically includes a second cavity 21, a sample stage 22, a plasma coil 23, and an upper electrode mesh 24 and a lower electrode mesh 25 through which the plasma can pass. The power line connecting the upper electrode mesh 24 and the lower electrode mesh 25 can be connected to an external voltage stabilizing power supply via a functional flange provided on the second cavity 21. A pipeline interface communicating with a pump body is also provided on the second cavity 21, and this pipeline interface is connected to an external pump body, such as an external molecular pump and a mechanical pump, whereby the processing chamber 2 can be quickly adjusted to the required vacuum degree and a high-quality vacuum environment can be provided. An air path flange and an openable cover body 26 can also be provided on the second cavity 21. The sample stage 22, the upper electrode mesh 24, and the lower electrode mesh 25 are located inside the second cavity 21, and the upper electrode mesh 24 and the lower electrode mesh 25 are arranged at an interval up and down and are height-adjustable. The sample transfer rod 13 of the sample loading chamber 1 can transfer the sample holder 12 of the sample loading chamber 1 to the sample stage 22 of the processing chamber 2, and / or transfer the sample holder 12 out from the sample stage 22. The plasma generated by the discharge of the plasma coil 23 can pass through the upper electrode mesh 24 and the lower electrode mesh 25 to process the sample located on the sample holder 12 in the processing chamber 2.

[0037] The exemplary working principle of the graphene processing device capable of providing low-energy implanted ions provided by the present invention is as follows: Generally, the sample loading chamber 1 is in a vacuum-sealed state. When placing a sample, the isolation valve 3 is closed, the sample loading chamber 1 is isolated from the processing chamber 2, and the pump pipeline interfaces of the sample loading chamber 1 and the processing chamber 2 are closed. An external gas path connected by an air path flange is used to introduce gas into the sample loading chamber 1 to atmospheric pressure, the sample loading chamber 1 is opened, the sample is placed on the sample holder 12, then the sample loading chamber 1 is closed, and the pump pipeline interface 15 is opened to pump air to a certain vacuum state. Next, the isolation valve 3 is opened to connect the sample loading chamber 1 and the processing chamber 2, and the sample transfer rod 13 is controlled to move left and right so that the sample holder 12 moves with the sample transfer rod 13. When the sample holder 12 reaches a predetermined position on the sample stage 22 of the processing chamber 2, the sample transfer rod 13 disengages from the sample holder 12 and retracts into the sample loading chamber 1, and then the plate isolation valve 3 is closed. After the processing chamber 2 is adjusted to appropriate conditions, an inert gas, such as argon, can be introduced through the air path flange, the plasma coil 23 is energized to generate plasma, and the external power supply is adjusted to generate an appropriate electric field for the upper electrode mesh 24 and the lower electrode mesh 25, so that the sample can be processed, such as hydrogen plasma treatment of graphene. After the processing is completed, the plasma generation is stopped, the isolation valve 3 is opened, the sample transfer rod 13 is sent into the processing chamber 2 to clamp the sample holder 12, then the sample transfer rod 13 is sent back to the sample loading chamber 1, the isolation valve 3 is closed, the sample loading chamber 1 is inflated, and the sample is taken out to complete the whole process of sample loading - processing - sampling.

[0038] The improved structural design of the present invention can provide a plasma generation vacuum environment of high quality by setting two - stage vacuum environments of a lofting chamber and a processing chamber, further reducing air environmental pollution, improving the efficiency of plasma generation, and ensuring the purity and reliability of the plasma; the upper and lower electrode meshes arranged at intervals can provide a parallel electric field in the vacuum environment, which can change the kinetic energy of the corresponding plasma to meet different plasma processing requirements. In addition, parameters such as the height and / or angle of the sample can be adjusted, thereby adjusting the sample processing environment. The overall structure of the device of the present invention is simple, with high integration and functional developability, which is conducive to large - scale popularization and application.

[0039] In some examples, several functional flange interfaces can be set on the first cavity 11 of the lofting chamber 1 and / or the second cavity 21 of the processing chamber 2, which can be used for functional transformation of the equipment to further improve the equipment integration. For example, the functional flange of the processing chamber 2 can be used for function development such as lighting lamps and inflation valves.

[0040] As described above, corresponding structures suitable for opening and closing can be set on the first cavity 11 and the second cavity 21 according to needs. In one example, transparent glass covers that can be opened and closed are provided at the tops of both the first cavity 11 and the second cavity 21. For example, a quartz glass is provided at the top of the lofting chamber 1, and the quartz glass and the circumferentially barrel - shaped first cavity 11 in the lower part form a closed environment. When the gas in the cavity is pumped out, due to the action of the external atmospheric pressure, the quartz glass will be firmly adsorbed and form an integral body with the first cavity 11. When the cavity is filled with gas, the pressure difference inside and outside the first cavity 11 disappears, and at this time, the quartz glass can be removed, and the sample can be placed on the sample holder 12 through the opening. Using quartz glass not only has better high - temperature resistance and other properties compared with metal, is not easy to deform, and can ensure the sealing of the cavity, but also has visibility, and the sample state can be observed through the glass. A quartz glass cover can also be provided at the top of the processing chamber 2, which not only has the same advantages of resistance to deformation and visibility, but also allows the plasma to pass through without shielding the plasma. Of course, in other examples, the covers of the first cavity 11 and the second cavity 21 can also be set at other positions, or covers made of other materials can be used, and there is no strict limit to this, but an additional requirement for the cover of the second cavity 21 is that it cannot interfere with the passage of the plasma.

[0041] In the case where a glass cover is provided, for the convenience of operation, a vacuum suction cup handrail can be correspondingly provided on the cover of the sample chamber and / or the processing chamber 2, and the handrail can be integrally connected or detachably connected to the cover.

[0042] To facilitate observing the situation inside the cavity, transparent observation windows can be provided on the first cavity 11 and the second cavity 21. For example, an observation window 27 is provided on the side wall of the second cavity 21.

[0043] The graphene processing device capable of providing low-energy implanted ions may be provided with a heating device to adjust the temperature of the sample. In one example, the heating device is arranged on the second cavity 21. The heating device may be, for example, a heating resistance wire located inside the sample stage 22. In other examples, the heating device may also be arranged at other positions of the second cavity 21. For example, the heating device is a heater including a heating pipe arranged on the surface of the second cavity 21. Or the heating device may be arranged on the sample transfer rod 13 to heat the sample during the process of transferring the sample, so as to shorten the preheating time of the sample in the processing chamber 2 and improve the utilization rate of the equipment.

[0044] The upper electrode grid 24 and the lower electrode grid 25 may be fixedly arranged in parallel at intervals in the second cavity 21 in a suitable manner, for example, fixed by a support frame. In a preferred example, as Figure 8 shown, both the upper electrode grid 24 and the lower electrode grid 25 include a mesh-shaped electrode 241 and an elastic expansion structure 242 made of an insulating material and located in the circumferential direction of the electrode 241. The corresponding electrode 241 is fixed in the second cavity 21 through the support of the elastic expansion structure 242. As the name implies, the elastic expansion structure 242 has a certain elasticity and provides a supporting force through elastic expansion. For example, it may be made of a plastic material. In addition to having a fixing frame 242a connected to the electrode 241, it also has a plurality of convex blocks 242b connected to the fixing frame 242a and protruding outwards. The upper electrode grid 24 and the lower electrode grid 25 are erected in the second cavity 21 through the convex blocks 242b. For example, there are 4 convex blocks 242b, which are evenly distributed in the circumferential direction of the fixing frame 242a. When it is necessary to adjust the electric field of the plasma, open the top cover of the second cavity 21 to manually adjust the positions of the upper electrode grid 24 and the lower electrode grid 25, and then adjust the elastic expansion structure to fix the upper and lower electrode grids. The operation is very convenient. Such a structural design also enables the electrodes to be quickly replaced when needed, expanding the applicability of the device.

[0045] In one example, the graphene processing device includes a transmission device cabinet 4. A pump body is arranged in the transmission device cabinet 4. The pump bodies connected to the first cavity 11 and the second cavity 21 may be arranged in the transmission device cabinet 4. The pump body includes, for example, a mechanical dry pump and a molecular turbo pump. The first cavity 11 and the second cavity 21 are connected to the same mechanical dry pump, and the second cavity 21 is also communicated with the molecular turbo pump. Therefore, the first cavity 11 can achieve a primary vacuum under the action of the mechanical dry pump, while the second cavity 21 can achieve a higher level of vacuum through the action of the mechanical dry pump and the molecular turbo pump to meet the plasma processing requirements. In the case where there is a device cabinet, the sample loading chamber 1, the processing chamber 2, and the isolation valve 3 are located on the transmission device cabinet 4, and the sample stage 22 of the processing chamber 2 is connected to the transmission device in the transmission device cabinet 4. The lifting and / or rotation of the sample stage 22 can be realized through the transmission device to adjust the height and angle of the sample.

[0046] The sample holder 12 and the sample transfer rod 13 can be linked through a suitable structure. In a preferred example, as Figure 10 and 11 shown, the sample holder 12 includes a chassis 121 and a bracket 122 fixedly connected to the chassis 121. The sample is placed on the chassis 121, and the sample transfer rod 13 has a fork-shaped structural end that can lift the bracket 122. The chassis 121 can be circular in shape, and the bracket 122 includes a lateral support structure and a longitudinal support structure that is connected to the lateral support structure and stands on the chassis 121. The bracket 122 is fixed to the chassis 121 through the longitudinal support structure. In a further example, a card slot matching the lateral support structure of the bracket 122 is provided on the sample transfer rod 13. For example, please continue to refer to Figure 10 and Figure 11As shown, the lateral support structure of the bracket 122 is disc-shaped. Correspondingly, circular card slots matching the number of disc-shaped lateral support structures of the bracket 122 are provided on the sample transfer rod 13. When the sample transfer rod 13 moves towards the sample holder 12 until the disc-shaped lateral support structures of the bracket 122 are all inserted into the circular card slots of the sample transfer rod 13, the sample holder 12 and the sample transfer rod 13 are aligned and fastened. Such a structure can further improve the stability during sample transfer and prevent the sample from shifting in position, which is of great significance for subsequent plasma processing. The main materials of the sample holder 12 and the sample transfer rod 13 are preferably metal materials, such as stainless steel, and coatings can be provided on the surface according to process requirements, such as silicon carbide coatings or ceramic coatings. Using metal materials not only endows the sample holder 12 with good mechanical properties, so that the chassis 121 can be made thinner, reducing the longitudinal distance between the sample and the sample stage 22, but also the metal has relatively good thermal conductivity, which can accelerate the heat conduction of the sample (when the heating device is arranged inside the sample stage 22, the heating of the sample is through the heat transfer of the chassis 121 of the sample holder 12). The size of the chassis 121 and the distribution of the brackets 122 on the chassis 121 can be determined according to the sample size. For example, when the sample size is large, the distance between the two brackets 122 can be increased, and even the brackets 122 can be arranged at the edge of the chassis 121 to use all the space on the chassis 121 as the sample placement space. At the same time, arranging the brackets 122 outside the sample space, such as at the edge of the chassis 121, can also play a guiding role to prevent the sample from slipping. To avoid particle contamination caused by friction when the sample contacts the bracket 122 and / or the sample transfer rod 13 contacts the sample holder 12, a buffer material layer can be provided on the surface of the bracket 122. For example, a PP material layer can be provided to wrap the bracket 122. In other examples, multiple brackets 122 can also be arranged on the same circumferential surface of the chassis 121. The inner side of the circumferential surface is the sample placement space, and the fork-shaped structure end of the sample transfer rod 13 is arranged in an arc shape to lift the bracket from the outside without passing directly above the sample placement space, which can also effectively avoid impurity contamination caused by friction on the sample transfer rod 13 and / or the sample holder. In a further example, several protruding positioning pins can be provided on the sample stage 22 and matching positioning holes can be provided on the sample holder 12. When the positioning pins are aligned with the positioning holes, it indicates that the transfer is in place, the sample holder 12 and the sample stage 22 are locked, and the sample transfer rod 13 stops moving. In addition, in some other examples, the bracket 122 and the chassis 121 can be designed to be detachably connected. For example, it is designed such that the bracket 122 can move radially along the chassis 121 (for example, a chute extending radially along the chassis 121 is provided on the chassis 121, and the bracket 122 is erected in the chute and can move in the chute) to adjust the distance between the two brackets 122 according to the sizes of different samples, so that the device can be used for processing samples of different sizes. The transmission method of the sample transfer rod 13 and the sample holder 12 refers toFigure 12 As shown, when sample transfer is to be performed, first place the sample on the chassis 121 of the sample holder 12. The fork-shaped end of the sample transfer rod 13 extends to the lower part of the support 122. Due to gravity, the sample transfer rod 13 will hang the entire sample holder 12 on it through the support 122. During the process of adjusting the left-right lateral movement of the sample transfer rod 13, the sample holder 12 will be driven to move left and right until the sample holder 12 passes through the isolation valve 3 and reaches the sample stage 22 of the processing chamber 2. Then adjust the height of the sample stage 22 to lift the sample holder 12, and the support 122 is separated from the sample transfer rod 13. At this time, the sample transfer rod 13 is withdrawn, and the sample holder 12 and the sample on the sample holder 12 will remain on the sample stage 22. After that, close the isolation valve 3, adjust the parameters of the processing chamber 2 (including vacuum degree, temperature, rotation angle of the sample holder 12, etc.) to perform plasma treatment on the sample. After the sample completes plasma treatment, open the isolation valve 3, and transfer the sample transfer rod 13 to the processing chamber 2 to remove the sample holder 12 and the sample as a whole. It can be seen that during the whole process, the direct movement of the sample is very small, and the sample is transferred between the sample placing chamber 1 with a secondary vacuum degree and the processing chamber 2 with a high vacuum degree instead of being directly transferred from the high vacuum degree area to the atmospheric environment, which can greatly reduce the risk of damage and contamination of the sample during the transfer process. Of course, in other examples, it is also possible to transfer only the sample rather than the sample holder 12 to the sample stage 22, but in the case of only transferring the sample, fixtures or molds need to be used, or a more precise robotic arm needs to be used for transportation. In this way, there are more requirements for the properties such as the size and strength of the sample, it will be more cumbersome, there will be more restrictions, and the required transfer time will also be longer.

[0047] In other examples, the sample transfer rod 13 and the base can also be of other structures. For example, through holes can be provided in the sample holder 12, and the sample transfer rod 13 can extend into the through holes of the sample holder 12 to lift the sample holder 12, or grooves can be provided on the side of the sample holder 12, and the sample transfer rod 13 can extend into the grooves on the side of the sample holder 12 to lift the sample holder 12. However, in this case, the thickness of the sample holder 12 needs to be relatively large, which is not conducive to heating the sample.

[0048] In one example, the sample placing chamber 1 further includes a guide rail 17. The sample transfer rod 13 is arranged on the guide rail 17, and the movement of the sample transfer rod 13 on the guide rail 17 is controlled by a control wheel 18 connected to the sample transfer rod 13, so that the transportation process of the sample transfer rod 13 is more stable.

[0049] Reference Figure 13 and Figure 14 As shown, wherein, Figure 13 and 14The left figure shows an atomic force microscope image of graphene surface hydrogenation treated with existing equipment, and the right figure shows an atomic force microscope image of graphene surface hydrogenation treated with the device of the present invention. It can be seen that, compared with the prior art, hydrogen plasma treatment of graphene using the device of the present invention can expand the bandgap of graphene and better understand the situation after graphene surface hydrogenation (such as Figure 13 and 14 The coil marked areas are regions that are difficult to process with existing equipment), providing more data support for graphene hydrogenation research. Referring to Figures 15 to 18 as shown, it can be seen that with the present invention, low-energy implanted hydrogen ions (usually requiring energy of over a thousand watts in the prior art) can be provided for long-term (up to 30 minutes or even longer) modification research of graphene while keeping the graphene intact, which can greatly increase the hydrogen coverage rate in graphene and open the bandgap for converting graphene into a semiconductor material, having extremely important value for the extended application of graphene materials.

[0050] Of course, the device of the present invention is not limited to hydrogen plasma treatment of graphene, but can also be used for other plasma treatments of graphene or plasma modification treatments of other two-dimensional materials.

[0051] In summary, the present invention provides a graphene processing device capable of providing low-energy implanted ions, including a sample placement chamber, a processing chamber, and an isolation valve disposed between the sample placement chamber and the processing chamber for controlling the on-off of the sample placement chamber and the processing chamber; the sample placement chamber includes a first cavity, a sample holder, and a sample transfer rod, and the sample holder is located in the first cavity; the processing chamber includes a second cavity, a sample stage, a plasma coil, and an upper electrode grid and a lower electrode grid through which the plasma can pass; the sample stage, the upper electrode grid, and the lower electrode grid are located in the second cavity, and the upper electrode grid and the lower electrode are arranged at intervals vertically and are height-adjustable; the sample transfer rod of the sample placement chamber can transfer the sample holder to the sample stage and / or take out the sample holder from the sample stage, and the plasma generated by the discharge of the plasma coil can pass through the upper electrode grid and the lower electrode grid to process the sample located on the sample holder in the processing chamber. With the improved structural design of the present invention, by setting two-stage vacuum environments of the sample placement chamber and the processing chamber, a high-quality plasma generation vacuum environment can be provided, further reducing air pollution, improving the efficiency of plasma generation, and ensuring the purity and reliability of the plasma; the vertically spaced upper and lower electrode grids can provide a parallel electric field in the vacuum environment, which can change the kinetic energy of the corresponding plasma to meet different plasma processing requirements. In addition, parameters such as the height and / or angle of the sample can be adjusted, thereby adjusting the sample processing environment. The overall structure of the device of the present invention is simple, with high integration and function development potential, facilitating large-scale promotion and application. Therefore, the present invention effectively overcomes various drawbacks in the prior art and has high industrial utilization value.

[0052] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A graphene processing device capable of providing low-energy implanted ions, characterized in that, It includes a lofting bin, a processing bin, and an isolation valve disposed between the lofting bin and the processing bin for controlling the on / off of the lofting bin and the processing bin; the lofting bin includes a first cavity, a sample holder, and a sample transfer rod, and the sample holder is located within the first cavity; the processing bin includes a second cavity, a sample stage, a plasma coil, and an upper electrode grid and a lower electrode grid through which plasma can pass; the sample stage, the upper electrode grid, and the lower electrode grid are located within the second cavity, the upper electrode grid and the lower electrode grid are arranged at an interval up and down and are height-adjustable, and both the upper electrode grid and the lower electrode grid include a mesh-shaped electrode and an elastic expansion structure made of an insulating material located in the circumferential direction of the electrode, and the corresponding electrode is fixed within the second cavity through the support of the elastic expansion structure; the sample transfer rod of the lofting bin can transfer the sample holder to the sample stage and / or transfer the sample holder out from the sample stage, and the plasma generated by the discharge of the plasma coil can pass through the upper electrode grid and the lower electrode grid to process the sample located on the sample holder within the processing bin.

2. The graphene processing device according to claim 1, wherein Transparent glass covers that can be opened and closed are provided at the tops of both the first cavity and the second cavity.

3. The graphene processing device according to claim 2, wherein, Vacuum suction cup handrails are provided on the cover of the lofting bin and / or the processing bin.

4. The graphene processing device according to claim 1, wherein, A heating device for heating the sample is provided on the second cavity.

5. The graphene processing device according to claim 4, characterized in that, The heating device includes a heating resistance wire located within the sample stage.

6. The graphene processing device according to claim 1, wherein A number of functional flanges are provided on the first cavity and / or the second cavity.

7. The graphene processing device according to claim 1, characterized in that The graphene processing device includes a transmission device cabinet, a pump body is provided within the transmission device cabinet, the lofting bin, the processing bin, and the isolation valve are located on the transmission device cabinet, and the sample stage of the processing bin is connected to the transmission device within the transmission device cabinet, and the lifting and / or rotation of the sample stage can be achieved through the transmission device.

8. The graphene processing device according to any one of claims 1 to 7, characterized in that, The sample holder includes a chassis and a bracket fixedly connected to the chassis, the sample is placed on the chassis, and the sample transfer rod has a fork-shaped structure end that can lift the bracket.

9. The graphene processing device according to claim 8, wherein The lofting bin further includes a guide rail, and the sample transfer rod is disposed on the guide rail.

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