Method for dynamically controlling carrier concentration in semiconductor structure and its application

Abstract

The present invention discloses a method for dynamically regulating the carrier concentration in a semiconductor structure and its application. The semiconductor structure comprises a first and a second semiconductor layer which are stacked, the first and the second semiconductor layers are formed of III-V semiconductor materials, and a two-dimensional electron gas is formed at the interface between the first semiconductor layer and the second semiconductor layer. The method comprises: adjusting the type, quantity, distribution density, etc. of molecules and / or ions reversibly adsorbed on the surface of the semiconductor structure, thereby dynamically regulating the concentration of the two-dimensional electron gas in the semiconductor structure; the molecules and / or ions can provide electrons into the semiconductor structure. The method of the present invention can simply and accurately realize the dynamic regulation of the 2DEG concentration in the III-V semiconductor heterojunction, thereby effectively ensuring and improving the product yield and performance of the HEMT device, and is particularly suitable for making high-performance enhanced HEMT devices.

Description

Technical Field

[0001] The present invention specifically relates to a method for dynamically regulating carrier concentration in a semiconductor structure and its application, for example, application in the preparation of a HEMT device. Background Art

[0002] The third-generation semiconductor materials represented by gallium nitride (GaN) have higher electron mobility, saturated electron velocity and breakdown electric field than Si, SiC, etc., and will have obvious advantages in the preparation of RF devices, power devices, etc. A typical application scenario of the third-generation semiconductor materials is the preparation of GaN-based HEMT devices (High Electron Mobility Transistors). At present, a type of GaN-based HEMT device that has been studied more is mainly based on AlGaN / GaN heterojunction, which mainly uses the two-dimensional electron gas (2DEG) generated at the interface of AlGaN / GaN heterojunction to work. For the generation mechanism of the two-dimensional electron gas, the current mainstream view is that it can be attributed to the spontaneous polarization and piezoelectric polarization effects of GaN, but spontaneous polarization and piezoelectric polarization are the driving forces of the source of 2DEG in AlGaN / GaN heterojunction. The corresponding microscopic source of 2DEG is controversial in this field. Due to the lack of microscopic understanding of the generation mechanism of 2DEG, the current of AlGaN / GaN heterojunction is mainly changed by changing the gate voltage. For example, there are three main technologies for realizing enhanced (or normally-off) AlGaN / GaN HEMT in the prior art: 1) p-GaN cap layer technology. The disadvantage of this technology is that the gate voltage swing is relatively low, and high-voltage crosstalk is prone to occur, which may cause the device to be turned on by mistake; 2) recessed gate technology. The problem with this technology is that ion damage will occur during the etching of the AlGaN barrier layer of tens of nanometers, resulting in a decrease in the device output current and an increase in the leakage current. At the same time, the uniformity of the current etching technology cannot guarantee the consistency of the device threshold voltage; 3) F ion implantation technology. The disadvantage of this technology is that the F element is unstable in the AlGaN / GaN material, and the device parameters drift under high voltage and high current conditions. Summary of the invention

[0003] The main purpose of the present invention is to provide a method for dynamically regulating the carrier concentration in a semiconductor structure and its application, so as to overcome the deficiencies in the prior art.

[0004] In order to achieve the above-mentioned invention object, the technical solution adopted by the present invention includes:

[0005] One aspect of the present invention provides a method for dynamically controlling carrier concentration in a semiconductor structure, wherein the semiconductor structure comprises a first semiconductor layer and a second semiconductor layer stacked together, wherein the first semiconductor layer and the second semiconductor layer are both formed of III-V semiconductor materials, and a two-dimensional electron gas is formed at an interface between the first semiconductor layer and the second semiconductor layer;

[0006] The method includes: at least adjusting the type and / or state parameters of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby dynamically regulating the concentration of the two-dimensional electron gas in the semiconductor structure; the electron donor substance includes molecules and / or ions that can provide electrons to the semiconductor structure, and the state parameters include the amount and / or distribution density of the electron donor substance.

[0007] Another aspect of the present invention provides use of the method for dynamically controlling carrier concentration in a semiconductor structure in preparing a HEMT device.

[0008] Compared with the prior art, the method provided by the present invention can simply and conveniently dynamically control the concentration of two-dimensional electron gas in a III-V semiconductor heterojunction (such as an AlGaN / GaN heterojunction) from a microscopic level, thereby preparing HEMT devices with different threshold voltages. It is particularly suitable for the preparation of enhanced HEMT devices, and the process is simpler and more controllable, and can effectively improve the product yield and performance of HEMT devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The features and advantages of the present invention will be more clearly understood by referring to the accompanying drawings, which are schematic and should not be construed as limiting the present invention in any way.

[0010] Figure 1 The influence mechanism of O2 reversibly adsorbed on the surface of AlGaN / GaN heterojunction on the 2DEG concentration at its interface in one embodiment of the present invention is shown.

[0011] Figure 2 It is a schematic diagram of a HEMT device structure in one embodiment of the present invention.

[0012] Figure 3 The figure shows the influence of different polar liquids on the 2DEG concentration at the AlGaN / GaN heterojunction interface in Example 1 of the present invention.

[0013] Figure 4 The effect of infrared light on the 2DEG concentration at the AlGaN / GaN heterojunction interface in Example 2 of the present invention is shown.

[0014] Figure 5The effect of different vacuum degrees on the 2DEG concentration at the AlGaN / GaN heterojunction interface in Example 3 of the present invention is shown.

[0015] Figure 6 The effect of ethanol and ultraviolet light on the 2DEG concentration at the AlGaN / GaN heterojunction interface in Example 4 of the present invention is shown. DETAILED DESCRIPTION

[0016] In view of the shortcomings of the prior art, the applicant has proposed a surface dynamic doping model through extensive research and practice, which can accurately explain the generation mechanism of 2DEG in III-V compound heterojunctions, such as AlGaN / GaN heterojunctions. Furthermore, based on this mechanism, the applicant has also realized the dynamic regulation of the concentration of the two-dimensional electron gas in the AlGaN / GaN heterojunction. In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution of the present application will be clearly and completely described in combination with the specific implementation method and the accompanying drawings.

[0017] One aspect of the present application provides a method for dynamically controlling carrier concentration in a semiconductor structure, wherein the semiconductor structure includes a first semiconductor layer and a second semiconductor layer stacked in layers, wherein the first semiconductor layer and the second semiconductor layer are both formed of III-V semiconductor materials, and a two-dimensional electron gas is formed at an interface between the first semiconductor layer and the second semiconductor layer;

[0018] The method includes: at least adjusting the type and / or state parameters of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby dynamically regulating the concentration of the two-dimensional electron gas in the semiconductor structure; the electron donor substance includes molecules and / or ions that can provide electrons to the semiconductor structure, and the state parameters include the amount and / or distribution density of the electron donor substance.

[0019] In the present application, at least a local surface of the semiconductor structure is capable of reversibly adsorbing an electron donor substance. According to actual needs, the type and / or state parameters of the electron donor substance adsorbed on one or more designated areas of the local surface of the semiconductor structure can be adjusted to dynamically control the concentration of the two-dimensional electron gas in the semiconductor structure corresponding to the designated area. Exemplarily, if the semiconductor structure is an epitaxial structure of HMET, the designated area can be a gate area on the surface of the epitaxial structure.

[0020] In one embodiment, the III-V semiconductor material includes but is not limited to any one or more combinations of III-nitrides, III-arsenides, III-phosphides, III-antimonides, and III-bismuths, such as binary compounds such as GaN, GaAs, GaP, AlN, InP, ternary compounds such as AlGaN, and quaternary compounds such as AlInGaN.

[0021] Preferably, the first semiconductor layer and the second semiconductor layer are both formed of group III nitrides, and the bandgap width of the second semiconductor layer is greater than the bandgap width of the first semiconductor layer. Exemplarily, the material of the first semiconductor layer includes but is not limited to GaN, AlN, InN, BN, Al x1 In y1 Ga z1 B 1-x1-y1-z1 Any one or more combinations of N, 0≤(x1, y1, z1)≤1, 0<(x1+y1+z1)≤1, the material of the second semiconductor layer includes but is not limited to AlGaN, AlN, AlBN, InGaN, InAlN, Al x2 In y2 Ga z2 B 1-x2-y2-z2 Any one or more combinations of N, 0≤(x2, y2, z2)≤1, 0<(x2+y2+z2)≤1.

[0022] In some cases, a space layer or insertion layer may be provided between the first semiconductor layer and the second semiconductor layer, and the material thereof may also be selected from III-V semiconductor materials, preferably III-nitrides, such as AlN.

[0023] In one embodiment, the semiconductor structure further includes a third semiconductor layer, the third semiconductor layer is coated on the first semiconductor layer or the second semiconductor layer, and the surface of the third semiconductor layer exposed to the outside is the surface of the semiconductor structure, and the third semiconductor layer allows the electrons provided by the electron donor substance to pass through and reach the interface between the first semiconductor layer and the second semiconductor layer. The material of the third semiconductor layer can also be selected from III-V semiconductor materials, preferably III-nitride, for example, a GaN capping layer, etc., but is not limited thereto.

[0024] In one embodiment, the electron donor material includes any one or more combinations of O2, CO2, CO, and O3, but is not limited thereto. Since different electron donor materials have different electron donation capabilities, the concentration of 2DEG can also be regulated by adjusting the type of electron donor material reversibly adsorbed on the surface of the semiconductor structure.

[0025] See also Figure 1 As shown in the figure, taking the materials of the first semiconductor layer and the second semiconductor layer as GaN and AlGaN respectively, they form an AlGaN / GaN heterojunction in the semiconductor structure. When O2, an electron donor, is dynamically adsorbed on the surface of the semiconductor structure, the O2 molecules collide with the holes generated on the GaN surface, and charge exchange occurs, thereby forming positively charged groups adsorbed on the surface of GaN. From the perspective of electrical neutrality, there will be one more electron in the channel at this time, resulting in an increase in the 2DEG concentration. In the figure, O2state represents the energy level position of oxygen molecules on the AlGaN surface, σ: polarization effect, P sP : Spontaneous polarization, P PE : piezoelectric polarization, ns: two-dimensional electron gas concentration.

[0026] In one embodiment, the method for dynamically regulating the carrier concentration in a semiconductor structure includes: contacting the surface of the semiconductor structure with a fluid, and changing the type and / or fluid parameters of the fluid in contact with the surface of the semiconductor structure, thereby adjusting the type and / or state parameters of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby achieving regulation of the concentration of the two-dimensional electron gas in the semiconductor structure, wherein the fluid includes gas and / or liquid, and the affinity of the fluid to the electron donor substance is different from the affinity of the surface of the semiconductor structure to the electron donor substance, and the fluid parameters include flow rate and / or flow velocity.

[0027] Exemplarily, a selected gas and / or a selected liquid may be brought into contact with the surface of the semiconductor structure to desorb at least part of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby reducing the concentration of the two-dimensional electron gas in the semiconductor structure, wherein the affinity of the selected gas and / or liquid to the electron donor substance is stronger than the affinity of the surface of the semiconductor structure to the electron donor substance. For example, if the electron donor substance is O2, the selected liquid may be a polar liquid phase system containing water, a polar organic solvent, etc., which may be pure water, a pure polar organic solvent (such as ethanol), or a mixed solvent thereof, or a homogeneous solution, a suspension, etc. formed with these substances as solvents or dispersion media, and is not limited thereto.

[0028] In one embodiment, the method for dynamically controlling the carrier concentration in a semiconductor structure includes: at least changing the gas pressure and / or temperature in the environment in which the semiconductor structure is located, thereby adjusting the type and / or state parameters of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby achieving control of the two-dimensional electron gas concentration in the semiconductor structure.

[0029] For example, the vacuum degree in the environment of the semiconductor structure can be increased (for example, above 10-9 Pa) to desorb at least part of the electron donor material reversibly adsorbed on the surface of the semiconductor structure, thereby reducing the concentration of the two-dimensional electron gas in the semiconductor structure.

[0030] Exemplarily, at least the surface of the semiconductor structure may be heated (e.g., baked) to desorb at least a portion of the electron donor material reversibly adsorbed on the surface of the semiconductor structure, thereby reducing the concentration of the two-dimensional electron gas in the semiconductor structure. The heating temperature should be sufficient to desorb the electron donor material from the surface of the semiconductor structure and lower than the temperature that damages the semiconductor structure, for example, >100°C.

[0031] Furthermore, the method of this embodiment is preferably implemented in a closed environment.

[0032] In one embodiment, the method for dynamically controlling the carrier concentration in a semiconductor structure includes: irradiating the surface of the semiconductor structure with light, and changing the wavelength of the light, thereby adjusting the state parameters of an electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby achieving control of the concentration of a two-dimensional electron gas in the semiconductor structure, wherein the light includes light having a first wavelength and / or light having a second wavelength, the electron donor substance can absorb the light having the first wavelength and generate resonance, and then detach from the surface of the semiconductor structure, and the surface of the semiconductor structure can absorb the light having the second wavelength and generate holes.

[0033] Exemplarily, the surface of the semiconductor structure may be irradiated with light having a first wavelength to desorb at least a portion of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby reducing the concentration of the two-dimensional electron gas in the semiconductor structure. For example, if the electron donor substance is O2 or CO2, the light having the first wavelength may be infrared light.

[0034] Exemplarily, the surface of the semiconductor structure is irradiated with light having a second wavelength to at least increase the amount and / or density of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby increasing the concentration of the two-dimensional electron gas in the semiconductor structure. For example, if the electron donor substance is O2 or CO2, the light having the second wavelength may be ultraviolet light.

[0035] Another aspect of the present application provides the use of the method for dynamically controlling the carrier concentration in a semiconductor structure, particularly in the preparation of a HEMT device.

[0036] Specifically, some embodiments of the present application provide a method for manufacturing a HEMT device, including the steps of manufacturing a semiconductor structure and manufacturing a source, a drain and a gate matched with the semiconductor structure, wherein a two-dimensional electron gas is distributed in the semiconductor structure; and the manufacturing method further includes:

[0037] S1, defining a gate region on the surface of the semiconductor structure, and using the method for dynamically controlling the carrier concentration in the semiconductor structure to adjust the two-dimensional electron gas concentration below the gate region to at least a set value;

[0038] S2. Depositing a conductive material directly on the gate region to form a gate, or depositing a dielectric material and a conductive material in sequence on the gate region to form a gate dielectric layer and a gate in sequence.

[0039] In one embodiment, the manufacturing method specifically comprises: firstly, in step S1, adjusting the concentration of the two-dimensional electron gas below the gate region to less than 10 13 cm -1 , preferably <10 10 cm -1 , more preferably <10 9 cm -1 , and then perform the operation of step S2 to obtain an enhanced HEMT device. Ideally, the concentration of the two-dimensional electron gas below the gate region can be adjusted to 0, thereby obtaining a normally-off enhanced HEMT device with excellent performance.

[0040] In one embodiment, the conductive material includes any one or more combinations of metals, non-metallic inorganic materials, and organic conductive materials. For example, the metal may include, but is not limited to, Au, Ag, Cu, Ti, Ni, etc. or their alloys. The non-metallic inorganic material may include, but is not limited to, metal oxides such as ITO and AZO, non-metallic single substances such as silicon, conductive carbon materials such as carbon nanotubes and graphene, and silicides such as SiC. The organic conductive material may include, but is not limited to, conductive polymers such as polyaniline, polypyrrole, and polythiophene.

[0041] In one embodiment, the dielectric material includes but is not limited to any one or more combinations of oxides such as silicon oxide, nitrides such as aluminum nitride, and fluorides such as aluminum nitride.

[0042] In the present application, the semiconductor structure can be grown and formed in accordance with conventional methods in the art using processes such as HVPE (hydride vapor phase epitaxy), MOCVD (metal organic chemical vapor deposition), and PECVD (plasma enhanced chemical vapor deposition), which will not be described in detail here.

[0043] In the present application, the semiconductor structure includes, in addition to the first semiconductor layer and the second semiconductor layer serving as the channel layer and the barrier layer respectively, a buffer layer, a cap layer, an insertion layer (space layer) and other common structural layers in HEMT devices. The material of the semiconductor structure is as described above and will not be repeated here.

[0044] In the present application, the source, drain and gate can be manufactured in a manner known in the art, and their materials can be common metals such as Au, Ag, Cu, Ti, Ni or their alloys, which will not be described in detail here.

[0045] In the present application, the HEMT device includes a group III nitride-based HEMT, such as AlGaN / GaN HEMT, InAlN / GaN HEMT, AlN / GaN HEMT, etc., but is not limited thereto.

[0046] The method provided by the present invention provides a new explanation for the 2DEG generation mechanism of III-V semiconductor heterojunctions (such as AlGaN / GaN heterojunctions). Moreover, the method of the present invention can simply and accurately realize the dynamic regulation of the 2DEG concentration in III-V semiconductor heterojunctions, thereby effectively ensuring and improving the product yield and performance of HEMT devices, and is particularly suitable for the production of high-performance enhanced HEMT devices.

[0047] The technical solution, implementation process and principle of the present invention will be further explained as follows. It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the present invention. Unless otherwise specified, all technical and scientific terms used in this specification have the same meanings as those commonly understood by those of ordinary skill in the art to which the present invention belongs.

[0048] The following embodiments are based on Figure 2 The HEMT device structure shown in the figure is implemented, and the HEMT device structure includes a GaN channel layer (ie, a first semiconductor layer 2, with a thickness of about 6 μm), an Al 0.25 Ga 0.75 N barrier layer (i.e., the second semiconductor layer 3, with a thickness of about 21nm) and GaN cap layer (i.e., the third semiconductor layer 4, with a thickness of about 2nm). The source region and drain region of the HEMT device structure are respectively pre-fabricated with a source electrode 5 and a drain electrode 6 made of metal materials, and both electrodes form ohmic contact with the HEMT device structure. At the same time, the gate region corresponding to the gate 7 on the surface of the HEMT device structure is vacant, so that the gate region can reversibly adsorb electron donor substances such as O2, CO2, CO, and O3. The HEMT device structure can be prepared by a common method in the art.

[0049] Example 1 Figure 2The HEMT device structure (sample 1) shown in the figure is placed in a chamber (temperature is about 25°C, humidity is about 50%), and a voltage of about 5V is applied to monitor the current until the current between the source and the drain is constant. Then, polar organic solutions such as water, acetic acid, ethanol, acetone, and acetonitrile are dripped onto the surface of the HEMT device structure to form a covering liquid film. At the same time, the current between the source and the drain is monitored in real time. The results are shown in FIG. Figure 3 This indicates that the 2DEG concentration under the gate region can be changed by applying a polar solvent. This may be because O2, CO2, etc. reversibly adsorbed on the gate region have a higher affinity with the polar solvent, so they desorb from the surface of the HEMT device structure, which leads to a significant decrease in the 2DEG concentration under the gate region.

[0050] Example 2 Figure 2 The HEMT device structure (sample 2) shown in the figure was placed in a dark room with constant temperature and humidity (temperature of about 25°C and humidity of about 50%) for more than 1 hour until the current between the source and the drain was constant. Then, infrared light with a wavelength of about 760nm was irradiated on the surface of the HEMT device structure, and the current between the source and the drain was monitored in real time. The results are shown in FIG. Figure 4 This indicates that the 2DEG concentration under the gate region can be changed by infrared light. This may be because the O2 and CO2 reversibly adsorbed on the gate region resonate with the infrared light and desorb from the surface of the HEMT device structure, which leads to a significant decrease in the 2DEG concentration under the gate region.

[0051] Example 3 Figure 2 The HEMT device structure (sample 3) shown in the figure was placed in a sealed chamber with constant temperature and humidity (temperature of about 25°C and humidity of about 50%) until the vacuum degree reached about 10 -9 Pa, and monitored the current between the source and drain at a voltage of about 5 V after 2 days, 5 days, and 7 days. Figure 5 This indicates that the 2DEG concentration under the gate region can be changed by changing the ambient pressure. This may be because the O2 and CO2 reversibly adsorbed on the gate region will desorb from the surface of the HEMT device structure under vacuum conditions, which will lead to a significant decrease in the 2DEG concentration under the gate region.

[0052] Example 4 Figure 2 The HEMT device structure (sample 4) shown in the figure was cleaned with ethanol and placed in a vacuum chamber (temperature about 25°C, humidity about 50%) until the vacuum degree reached about 10 -4 pa, stop evacuating, and introduce oxygen (99.999%) into the chamber, then irradiate the surface of the HEMT device structure with ultraviolet light with a wavelength of about 300nm, and monitor the current between the source and drain in real time. The results are as follows Figure 6This shows that the 2DEG concentration under the gate region can be changed by ultraviolet light. This may be because ultraviolet light will generate holes on the surface of the HEMT device structure, allowing more O2 and CO2 to be reversibly adsorbed to the gate region, which in turn leads to a significant increase in the 2DEG concentration under the gate region.

[0053] When the general Figure 2 Al 0.25 Ga 0.75 N / GaN heterojunction replaced by other Al x Ga 1-x When N / GaN heterojunction (0<x<1), AlInN / GaN heterojunction, etc. are used, similar experimental conclusions can be obtained by conducting experiments in the manner of Examples 1 to 5. Furthermore, referring to the experimental conclusions of the above embodiments, the 2DEG concentration in the HEMT device structure can be dynamically controlled to realize the fabrication of different types of HEMT devices.

[0054] Although the present invention has been described with reference to illustrative embodiments, it will be appreciated by those skilled in the art that various other changes, omissions and / or additions may be made and that substantial equivalents may be substituted for the materials of the described embodiments without departing from the spirit and scope of the present invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the present invention without departing from the scope of the present invention. Therefore, it is not intended herein to limit the present invention to the specific disclosed embodiments for carrying out the present invention, but rather it is intended that the present invention will include all embodiments within the scope of the appended claims.

Claims

1. A method for dynamically controlling carrier concentration in a semiconductor structure, wherein the semiconductor structure comprises a first semiconductor layer and a second semiconductor layer stacked together, wherein the first semiconductor layer and the second semiconductor layer are both formed of III-V semiconductor materials, and a two-dimensional electron gas is formed at an interface between the first semiconductor layer and the second semiconductor layer; It is characterized in that The method includes: at least adjusting the type and / or state parameters of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby dynamically regulating the concentration of the two-dimensional electron gas in the semiconductor structure; the electron donor substance includes molecules and / or ions that can provide electrons to the semiconductor structure, and the state parameters include the amount and / or distribution density of the electron donor substance.

2. The method for dynamically controlling carrier concentration in a semiconductor structure according to claim 1, characterized in that: The first semiconductor layer and the second semiconductor layer are both formed of group III nitride, and a band gap width of the second semiconductor layer is greater than a band gap width of the first semiconductor layer.

3. The method for dynamically controlling carrier concentration in a semiconductor structure according to claim 2, characterized in that: The material of the first semiconductor layer includes GaN, AlN, InN, BN, Al x1 In y1 Ga z1 B 1-x1-y1-z1 Any one or more combinations of N, 0≤(x1, y1, z1)≤1, (x1+y1+z1)≤1, the material of the second semiconductor layer includes AlGaN, AlN, AlBN, InGaN, InAlN, Al x2 In y2 Ga z2 B 1-x2-y2-z2 Any one or more combinations of N, 0≤(x2, y2, z2)≤1, (x2+y2+z2)≤1.

4. The method for dynamically controlling carrier concentration in a semiconductor structure according to any one of claims 1 to 3, characterized in that: The semiconductor structure also includes a third semiconductor layer, which is covered on the first semiconductor layer or the second semiconductor layer, and the exposed surface of the third semiconductor layer is the surface of the semiconductor structure, and the third semiconductor layer allows the electrons provided by the electron donor substance to pass through and reach the interface between the first semiconductor layer and the second semiconductor layer.

5. The method for dynamically controlling carrier concentration in a semiconductor structure according to claim 4, characterized in that: The material of the third semiconductor layer includes group III nitride.

6. The method for dynamically controlling carrier concentration in a semiconductor structure according to claim 1, characterized in that: The electron donor material includes any one or more combinations of O2, CO2, CO, O3, nitrogen oxides, and sulfur oxides.

7. The method for dynamically controlling the carrier concentration in a semiconductor structure according to claim 1 or 6, characterized in that include: The surface of the semiconductor structure is brought into contact with a fluid, and the type and / or fluid parameters of the fluid in contact with the surface of the semiconductor structure are changed, so as to adjust the type and / or state parameters of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby realizing the regulation of the concentration of the two-dimensional electron gas in the semiconductor structure, wherein the fluid comprises a gas and / or a liquid, and the affinity of the fluid to the electron donor substance is different from the affinity of the surface of the semiconductor structure to the electron donor substance, and the fluid parameters comprise a flow rate and / or a flow velocity; Alternatively, at least the gas pressure and / or temperature in the environment of the semiconductor structure is changed, thereby adjusting the type and / or state parameters of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby achieving regulation of the concentration of the two-dimensional electron gas in the semiconductor structure; Alternatively, the surface of the semiconductor structure is irradiated with light, and the wavelength of the light is changed, so as to adjust the state parameters of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby realizing the regulation of the concentration of the two-dimensional electron gas in the semiconductor structure, wherein the light includes light with a first wavelength and / or light with a second wavelength, the electron donor substance can absorb the light with the first wavelength and generate resonance, and then detach from the surface of the semiconductor structure, and the surface of the semiconductor structure can absorb the light with the second wavelength and generate holes.

8. The method for dynamically controlling carrier concentration in a semiconductor structure according to claim 7, characterized in that Specifically include: Bringing a selected gas and / or a selected liquid into contact with the surface of the semiconductor structure to desorb at least a portion of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby reducing the concentration of the two-dimensional electron gas in the semiconductor structure, wherein the affinity of the selected gas and / or liquid to the electron donor substance is stronger than the affinity of the surface of the semiconductor structure to the electron donor substance; Alternatively, the vacuum degree in the environment of the semiconductor structure is increased to desorb at least part of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby reducing the concentration of the two-dimensional electron gas in the semiconductor structure; Alternatively, at least the surface of the semiconductor structure is heated to desorb at least part of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby reducing the concentration of the two-dimensional electron gas in the semiconductor structure; Alternatively, irradiating the surface of the semiconductor structure with light having a first wavelength to desorb at least a portion of the electron donor substance reversibly adsorbed on the surface of the semiconductor structure, thereby reducing the concentration of the two-dimensional electron gas in the semiconductor structure; Alternatively, the surface of the semiconductor structure is irradiated with light having a second wavelength to at least increase the amount and / or density of electron donor substances reversibly adsorbed on the surface of the semiconductor structure, thereby increasing the concentration of two-dimensional electron gas in the semiconductor structure.

9. The method for dynamically controlling carrier concentration in a semiconductor structure according to claim 8, characterized in that: The selected liquid includes any one or more combinations of water or polar organic solvents; Alternatively, the light having the first wavelength includes infrared light; Alternatively, the light having the second wavelength includes ultraviolet light; And / or, the selected gas includes nitrogen.

10. A method for manufacturing a HEMT device, comprising the steps of manufacturing a semiconductor structure and manufacturing a source, a drain and a gate matched with the semiconductor structure, wherein a two-dimensional electron gas is distributed in the semiconductor structure; characterized in that: The production method further comprises: S1. defining a gate region on the surface of the semiconductor structure, and adjusting the concentration of the two-dimensional electron gas below the gate region to a set value at least by using the method described in any one of claims 1 to 9; S2. Depositing a conductive material directly on the gate region to form a gate, or depositing a dielectric material and a conductive material in sequence on the gate region to form a gate dielectric layer and a gate in sequence.

11. The method for manufacturing a HEMT device according to claim 10, characterized in that Specifically include: First, in step S1, the concentration of the two-dimensional electron gas below the gate region is adjusted to less than 10 13 cm -1 , and then perform the operation of step S2 to obtain an enhanced HEMT device.

12. The method for manufacturing a HEMT device according to claim 10, characterized in that: The conductive material includes any one or more combinations of metals, non-metallic inorganic materials, and organic conductive materials; and / or, the dielectric material includes any one or more combinations of oxides, nitrides, and fluorides; and / or, the HEMT device includes a III-nitride-based HEMT.

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