Semiconductor devices

Abstract

The object is to provide a technique capable of reducing a gap between a first semiconductor device and a second semiconductor device that are bonded together. At least one of a first electrode of the first semiconductor device and a second electrode of the second semiconductor device and a second electrode of the first semiconductor device and a first electrode of the second semiconductor device are electrically connected, and for each of the first semiconductor device and the second semiconductor device, a thickness of a portion from a first connection portion to a second connection portion and a thickness of a holding member are less than or equal to a thickness of a first main body portion or a thickness of a second main body portion, respectively.

Description

Technical Field

[0001] The present invention relates to semiconductor devices. Background Art

[0002] The following technology is proposed for semiconductor devices such as power semiconductor devices, that is, preparing a plurality of modules having a bridge arm, and by bonding these modules together, a module having multiple bridge arms is formed (for example, Patent Document 1). In addition, a module having a bridge arm is sometimes also referred to as a single function module, a single-phase module, a 1-in-1 module, etc. As a module having multiple bridge arms, there are, for example, a 2-in-1 module, a 6-in-1 module, etc. According to the technology such as the above-mentioned Patent Document 1, miniaturization of semiconductor devices can be achieved.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2013-038105 Summary of the invention

[0004] However, in the prior art, the entire package member holding the semiconductor element is relatively thick, so gaps are generated between electrodes of a plurality of bonded single-function modules, resulting in a problem of poor assemblability and miniaturization of the semiconductor device.

[0005] Therefore, the present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a technology capable of reducing the gap between a first semiconductor device and a second semiconductor device that are bonded together.

[0006] The semiconductor device of the present invention comprises a first semiconductor device and a second semiconductor device which can be bonded to each other, wherein the first semiconductor device and the second semiconductor device each comprise: a semiconductor element; a first electrode comprising a first connection portion and a first main portion, wherein the first connection portion is arranged on a first side in a bonding direction of the first semiconductor device and the second semiconductor device, i.e., an up-down direction, relative to the semiconductor element, and connected to the semiconductor element, and the first main portion is arranged on a side of the semiconductor element and connected to the first connection portion; and a second electrode comprising a second connection portion and a second main portion, wherein the second connection portion is arranged on a second side in the up-down direction relative to the semiconductor element, and connected to the semiconductor element, and the second main portion is arranged on the side of the semiconductor element. a side of the conductor element, connected to the second connecting portion; and a holding component, which holds the semiconductor element, the first electrode and the second electrode, exposing the first side surface of the first electrode and the second side surface of the second electrode, and at least one of the first electrode of the first semiconductor device and the second electrode of the second semiconductor device, and the second electrode of the first semiconductor device and the first electrode of the second semiconductor device is electrically connected, and for each of the first semiconductor device and the second semiconductor device, the thickness of the portion from the first connecting portion to the second connecting portion and the thickness of the holding component are respectively less than or equal to the thickness of the first main portion or the thickness of the second main portion.

[0007] Effects of the Invention

[0008] According to the present invention, at least one of the first electrode of the first semiconductor device and the second electrode of the second semiconductor device, and the second electrode of the first semiconductor device and the first electrode of the second semiconductor device are electrically connected, and for each of the first semiconductor device and the second semiconductor device, the thickness of the portion from the first connection portion to the second connection portion and the thickness of the holding member are less than or equal to the thickness of the first main body portion or the thickness of the second main body portion. With such a structure, the gap between the first semiconductor device and the second semiconductor device bonded together can be reduced.

[0009] The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a cross-sectional view showing the structure of the semiconductor device according to the first embodiment.

[0011] Figure 2 It is a plan view showing the structure of a first semiconductor device according to the first embodiment.

[0012] Figure 3 This is a cross-sectional view showing the structure of a first semiconductor device according to the first embodiment.

[0013] Figure 4 It is a side view showing the structure of a first semiconductor device according to the first embodiment.

[0014] Figure 5 It is a plan view showing the structure of a second semiconductor device according to the first embodiment.

[0015] Figure 6 It is a cross-sectional view showing the structure of a second semiconductor device according to the first embodiment.

[0016] Figure 7 It is a side view showing the structure of the second semiconductor device according to the first embodiment.

[0017] Figure 8 This is a cross-sectional view showing a structure in which a first semiconductor device and a second semiconductor device according to the first embodiment are bonded together.

[0018] Fig. 9 This is a side view showing a structure in which a first semiconductor device and a second semiconductor device according to the first embodiment are bonded together.

[0019] Fig.10 This is a cross-sectional view showing a structure in which two first semiconductor devices and one second semiconductor device according to the first embodiment are bonded together.

[0020] Fig.11 It is a cross-sectional view showing the structure of a first semiconductor device and a second semiconductor device according to the second embodiment.

[0021] Fig.12 It is a cross-sectional view showing the structure of a first semiconductor device and a second semiconductor device according to the third embodiment.

[0022] Fig.13 It is a plan view showing the structure of a second semiconductor device according to a fourth embodiment.

[0023] Fig.14 It is a cross-sectional view showing the structure of a semiconductor device according to a ninth embodiment.

[0024] Fig.15 It is a cross-sectional view showing the structure of a semiconductor device according to a tenth embodiment.

[0025] Fig.16 It is a cross-sectional view showing the structure of a first semiconductor device according to a thirteenth embodiment.

[0026] Fig.17 It is a plan view showing the structure of a first semiconductor device according to a thirteenth embodiment.

[0027] Fig.18 It is a cross-sectional view showing the structure of a semiconductor device according to a fourteenth embodiment.

[0028] Fig.19 It is a cross-sectional view showing the structure of a semiconductor device according to a fifteenth embodiment. DETAILED DESCRIPTION

[0029] Below, while referring to the attached Figure 1 The embodiments are described in detail below. The features described in the following embodiments are illustrative, and not all features are required. In addition, in the description shown below, the same structural elements are marked with the same or similar reference numerals in multiple embodiments, and the description is mainly focused on different structural elements. In addition, in the description recorded below, specific positions and directions such as "upper", "lower", "left", "right", "front" or "back" are not necessarily consistent with the directions during actual implementation.

[0030] <Implementation Method 1>

[0031] Figure 1 1 is a cross-sectional view showing the structure of the semiconductor device according to the first embodiment. The semiconductor device according to the first embodiment includes a first semiconductor device 1 and a second semiconductor device 2 that can be bonded to each other, grease 60a, 60b, 60c, 60d, insulating plates 70a, 70b, and cooling fins 80a, 80b.

[0032] As will be described in detail later, the first semiconductor device 1 and the second semiconductor device 2 according to the first embodiment are each a 2-in-1 module. Figure 1 The semiconductor device of the present invention becomes a 4-in-1 module. In the following description, the bonding direction of the first semiconductor device 1 and the second semiconductor device 2 is defined as the up-down direction, and the side direction is defined as a direction orthogonal to the up-down direction.

[0033] The insulating plate 70a is disposed on the upper surface of the first and second semiconductor devices 1 and 2 bonded together via the grease 60a. The cooling fins 80a are disposed on the upper surface of the insulating plate 70a via the grease 60b.

[0034] The insulating plate 70b is disposed on the lower surface of the bonded first semiconductor device 1 and second semiconductor device 2 via the grease 60c. The cooling fins 80b are disposed on the lower surface of the insulating plate 70b via the grease 60d.

[0035] In addition, although Figure 1 In the embodiment, grease, insulating plates and cooling fins are provided on the upper and lower surfaces of the first semiconductor device 1 and the second semiconductor device 2, respectively. However, the grease, insulating plates and cooling fins may be provided on only one surface.

[0036] Figure 2 is a plan view showing the structure of a first semiconductor device 1 according to the first embodiment. Figure 3 is a cross-sectional view showing the structure, Figure 4 is a side view showing the structure. Specifically, Figure 2 (a) is a plan view of the first semiconductor device 1 as viewed from the upper side. Figure 2 (b) is a plan view of the first semiconductor device 1 as viewed from the bottom. Figure 3 is along Figure 2 (a) is a cross-sectional view along line AA. Figure 4 (a) is from Figure 2 (a) Side view from direction B, Figure 4 (b) is from Figure 2 (a) Side view viewed from the C direction.

[0037] The first semiconductor device 1 is Figure 2 As shown, there are a P main electrode 12, an N main electrode 13 and a packaging component 15, such as Figure 3 The semiconductor elements 11a and 11b, the output terminal 14 and the solders 16a, 16b, 16c and 16d are shown.

[0038] The semiconductor elements 11a and 11b include at least one of a semiconductor switching element and a diode, such as a power semiconductor element. The semiconductor switching element is, for example, an IGBT (Insulated Gate Bipolar Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The diode is, for example, an SBD (Schottky Barrier Diode) and a PND (PN junction diode). In addition, in the first embodiment, the number of semiconductor elements 11a and 11b is two, but it is not limited to this.

[0039] The first electrode, i.e., the P main electrode 12, is made of a conductor such as Al (aluminum) and Cu (copper). Figure 2 As shown in (a), it has a first connecting portion, namely a P connecting portion 12a, and a first main body portion, namely a P main body portion 12b. Figure 3As shown, the P connection portion 12a is disposed above the semiconductor elements 11a and 11b and connected to the semiconductor element 11a via solder 16a. The P main body portion 12b is disposed on the side of the semiconductor elements 11a and 11b and connected to the P connection portion 12a and is thicker than the P connection portion 12a.

[0040] The second electrode, the N main electrode 13, is made of the same conductor as the P main electrode 12. Figure 2 As shown in (b), it has a second connecting portion, namely, an N connecting portion 13a, and a second main body portion, namely, an N main body portion 13b. Figure 3 As shown, the N connecting portion 13a is disposed on the lower side relative to the semiconductor elements 11a and 11b, and is connected to the semiconductor element 11b through the solder 16b. Figure 3 The P main body portion 12b is similarly disposed on the side of the semiconductor elements 11a and 11b, connected to the N connection portion 13a, and is thicker than the N connection portion 13a.

[0041] The output terminal 14 is made of the same conductor as the P main electrode 12. Figure 3 As shown, it has a third connection part, namely an output connection part 14a, and a third main body part, namely an output main body part 14b. The output connection part 14a is arranged between the semiconductor elements 11a and 11b, and is connected to the semiconductor elements 11a and 11b through solders 16c and 16d. The output main body part 14b is arranged on the side of the semiconductor elements 11a and 11b, connected to the output connection part 14a, and is thicker than the output connection part 14a.

[0042] The holding member, that is, the packaging member 15 is made of, for example, resin, and holds the semiconductor elements 11a, 11b, the P main electrode 12, the N main electrode 13, and the output terminal 14, with the upper surface of the P main electrode 12 and the lower surface of the N main electrode 13 exposed. Figure 2 As shown, in the first embodiment, the P main body portion 12 b , the N main body portion 13 b , and the output main body portion 14 b are substantially exposed from the packaging member 15 .

[0043] Here, in Figure 3 In the embodiment, the thickness of each of the P main body portion 12b, the N main body portion 13b, and the output main body portion 14b is the same as the thickness of the first semiconductor device 1, which is, for example, 3 mm. The thickness of the structural elements inside the packaging component 15 is reduced by cutting, rolling, etc., and the thickness is, for example, less than or equal to 1 / 3 of the thickness before the reduction. In addition, the thickness mentioned here corresponds to the length in the up-down direction, which is also the same in the following description.

[0044] As a result, the thickness of the portion from the P connection portion 12a to the N connection portion 13a and the thickness of the packaging component 15 become less than or equal to the thickness of the P main body portion 12b, the thickness of the N main body portion 13b, or the thickness of the output main body portion 14b. As an example of the above structure, Figure 3 1 shows a structure in which there is no step between the upper surfaces of the P connection portion 12a, the P main portion 12b, the N main portion 13b, the output main portion 14b, and the packaging component 15. As an example of the above structure, Figure 3 2 shows a structure in which there is no step between the lower surfaces of the N connection portion 13 a , the P main body portion 12 b , the N main body portion 13 b , the output main body portion 14 b , and the packaging component 15 .

[0045] Furthermore, the thickness of the P main body portion 12b, the thickness of the N main body portion 13b, and the thickness of the output main body portion 14b may be different from each other. Even in this case, as long as the thickness of the portion from the P connection portion 12a to the N connection portion 13a and the thickness of the packaging component 15 are each less than or equal to the thickness of the P main body portion 12b, the thickness of the N main body portion 13b, or the thickness of the output main body portion 14b.

[0046] The first semiconductor device 1 according to the first embodiment has not only the above-mentioned components but also Figure 2 The signal terminal portion 17 is connected to the semiconductor elements 11 a and 11 b through a wire (not shown) or the like, and protrudes from the side of the package component 15 to the outside.

[0047] like Figure 2 As shown in FIG. 1 , the P main body portion 12b and the N main body portion 13b are arranged adjacent to each other in a plan view, and the output main body portion 14b is arranged on the opposite side of the P main body portion 12b and the N main body portion 13b relative to the packaging component 15 in a plan view. However, the positional relationship between the P main body portion 12b, the N main body portion 13b, the output main body portion 14b, and the signal terminal portion 17 in a plan view is not limited to Figure 2 The position relationship shown.

[0048] Figure 5 is a plan view showing the structure of the second semiconductor device 2 according to the first embodiment. Figure 6 is a cross-sectional view showing the structure, Figure 7 is a side view showing the structure. Specifically, Figure 5 (a) is a plan view of the second semiconductor device 2 as viewed from the upper side. Figure 5 (b) is a plan view of the second semiconductor device 2 as viewed from the bottom. Figure 6 is along Figure 5 (a) is a cross-sectional view of the DD line. Figure 7 (a) is from Figure 5 (a) Side view from direction E, Figure 7 (b) is from Figure 5 (a) Side view viewed from the F direction.

[0049] The structure of the second semiconductor device 2 will be described in outline. The structure of the second semiconductor device 2 is vertically symmetrical to that of the first semiconductor device 1. The second semiconductor device 2 will be described in detail below.

[0050] The second semiconductor device 2 is Figure 5 As shown, there are an N main electrode 22, a P main electrode 23 and a packaging component 25. Figure 6 The semiconductor elements 21a and 21b, the output terminal 24 and the solders 26a, 26b, 26c and 26d are shown.

[0051] The semiconductor elements 21a and 21b include at least one of a semiconductor switch element and a diode, for example, which is a power semiconductor element, similarly to the semiconductor elements 11a and 11b. In the first embodiment, the number of semiconductor elements 21a and 21b is two, but the present invention is not limited thereto.

[0052] The first electrode, the N main electrode 22, is made of the same conductor as the P main electrode 12. Figure 5 As shown in (a), it has a first connecting portion, namely, an N connecting portion 22a, and a first main body portion, namely, an N main body portion 22b. Figure 6 As shown, the N connecting portion 22a is disposed on the upper side relative to the semiconductor elements 21a and 21b, and is connected to the semiconductor element 21a through the solder 26a. Figure 6 The P main body portion 23b is similarly disposed on the side of the semiconductor elements 21a and 21b, connected to the N connection portion 22a, and is thicker than the N connection portion 22a.

[0053] The second electrode, the P main electrode 23, is made of the same conductor as the P main electrode 12. Figure 5 As shown in (b), it has a second connecting portion, namely a P connecting portion 23a, and a second main body portion, namely a P main body portion 23b. Figure 6 As shown, the P connection portion 23a is arranged below the semiconductor elements 21a and 21b and connected to the semiconductor element 21b via the solder 26b. The P main body portion 23b is arranged on the side of the semiconductor elements 21a and 21b and connected to the P connection portion 23a and is thicker than the P connection portion 23a.

[0054] The output terminal 24 is made of the same conductor as the P main electrode 12, such as Figure 6As shown, it has a third connection part, namely an output connection part 24a, and a third main body part, namely an output main body part 24b. The output connection part 24a is arranged between the semiconductor elements 21a and 21b, and is connected to the semiconductor elements 21a and 21b through solders 26c and 26d. The output main body part 24b is arranged on the side of the semiconductor elements 21a and 21b, connected to the output connection part 24a, and is thicker than the output connection part 24a.

[0055] The holding member, that is, the packaging member 25 is made of, for example, resin, and holds the semiconductor elements 21a, 21b, the N main electrode 22, the P main electrode 23, and the output terminal 24, with the upper surface of the N main electrode 22 and the lower surface of the P main electrode 23 exposed. Figure 5 As shown, in the first embodiment, the N main body portion 22 b , the P main body portion 23 b , and the output main body portion 24 b are substantially exposed from the package member 25 .

[0056] Here, in Figure 6 In the embodiment, the thickness of each of the N main body portion 22b, the P main body portion 23b, and the output main body portion 24b is the same as the thickness of the second semiconductor device 2, which is, for example, 3 mm. The thickness of the structural elements inside the packaging component 25 is reduced by cutting, rolling, etc., and the thickness is, for example, less than or equal to 1 / 3 of the thickness before the reduction.

[0057] As a result, the thickness of the portion from the N connection portion 22a to the P connection portion 23a and the thickness of the packaging component 25 are each less than or equal to the thickness of the N main body portion 22b, the thickness of the P main body portion 23b, or the thickness of the output main body portion 24b. Figure 6 2 shows a structure in which there is no step between the upper surfaces of the N connection portion 22a, the N main body portion 22b, the P main body portion 23b, the output main body portion 24b, and the packaging component 25. As an example of the above structure, Figure 6 2 shows a structure in which there is no step between the lower surfaces of the P connection portion 23 a , the N main body portion 22 b , the P main body portion 23 b , the output main body portion 24 b , and the packaging component 25 .

[0058] In addition, the thickness of the N main body portion 22b, the thickness of the P main body portion 23b, and the thickness of the output main body portion 24b may be different from each other. Even in this case, as long as the thickness of the portion from the N connection portion 22a to the P connection portion 23a and the thickness of the packaging component 25 are each less than or equal to the thickness of the N main body portion 22b, the thickness of the P main body portion 23b, or the thickness of the output main body portion 24b.

[0059] The second semiconductor device 2 according to the first embodiment has not only the above-mentioned components but also Figure 5 The signal terminal portion 27 is connected to the semiconductor elements 21 a and 21 b through a wire (not shown) or the like, and protrudes from the side of the package component 25 to the outside.

[0060] like Figure 5 As shown in FIG. 1 , the N main body portion 22b and the P main body portion 23b are arranged adjacent to each other in a plan view, and the output main body portion 24b is arranged on the opposite side of the N main body portion 22b and the P main body portion 23b relative to the packaging component 25 in a plan view. However, the positional relationship between the N main body portion 22b, the P main body portion 23b, the output main body portion 24b and the signal terminal portion 27 in a plan view is not limited to Figure 5 The position relationship shown.

[0061] Figure 8 is a cross-sectional view showing a structure after the first semiconductor device 1 and the second semiconductor device 2 according to the first embodiment are bonded together. Fig. 9 In the following description, when the P main electrodes 12 and 23 and the N main electrodes 13 and 22 are not distinguished, they may be referred to as “main electrodes”.

[0062] N main electrode 13 of first semiconductor device 1 and N main electrode 22 of second semiconductor device 2 overlap with each other in a plan view and are electrically connected by being in direct contact with each other.

[0063] A portion of the P main electrode 12 of the first semiconductor device 1 and a portion of the P main electrode 23 of the second semiconductor device 2 overlap each other when viewed from above, and are electrically connected by direct contact with each other. The portion of the P main electrode 12 referred to here is the P main portion 12b, and the portion of the P main electrode 23 is the P main portion 23b.

[0064] A portion of the output terminal 14 of the first semiconductor device 1 and a portion of the output terminal 24 of the second semiconductor device 2 overlap each other when viewed from above, and are electrically connected by direct contact with each other. The portion of the output terminal 14 referred to herein is the output main body portion 14b, and the portion of the output terminal 24 is the output main body portion 24b.

[0065] By bonding the first semiconductor device 1 and the second semiconductor device 2 together as described above, two 2-in-1 modules are connected in parallel to realize a 4-in-1 module. In addition, in the first embodiment, the electrodes and output terminals of the first semiconductor device 1 are electrically connected to the electrodes and output terminals of the second semiconductor device 2 by directly contacting each other, but the present invention is not limited to this. For example, as in the fifth embodiment described later, the electrodes and output terminals of the first semiconductor device 1 and the electrodes and output terminals of the second semiconductor device 2 may be electrically connected via a metal plate or the like.

[0066] In the above description, a structure including one first semiconductor device 1 and one second semiconductor device 2 is described, but a structure including one or more first semiconductor devices 1 and one or more second semiconductor devices 2 in which the first semiconductor devices 1 and the second semiconductor devices 2 are alternately bonded one by one may also be used. For example, Fig.10 As shown in FIG. 1 , a structure in which one second semiconductor device 2 is sandwiched between two first semiconductor devices 1 may be adopted.

[0067] exist Fig.10 In the embodiment, the N main electrode 13, a part of the P main electrode 12, and a part of the output terminal 14 of the top first semiconductor device 1 overlap with the N main electrode 22, a part of the P main electrode 23, and a part of the output terminal 24 of the second semiconductor device 2 when viewed from above, and are electrically connected. In addition, the P main electrode 23, a part of the N main electrode 22, and a part of the output terminal 24 of the second semiconductor device 2 overlap with the P main electrode 12, a part of the N main electrode 13, and a part of the output terminal 14 of the bottom first semiconductor device 1 when viewed from above, and are electrically connected. Thus, three 2-in-1 modules are connected in parallel to realize a 6-in-1 module.

[0068] <Summary of Implementation Method 1>

[0069] According to the semiconductor device involved in the present embodiment 1 as described above, by bonding the first semiconductor device 1 and the second semiconductor device to each other, it is possible to increase the parallel connection of semiconductor elements. In addition, the main electrodes connected to the outside such as the power supply and the motor are also bonded, so it is possible to cope with the increase in current and Joule heat associated with the increase in parallel connection. In addition, the positioning (alignment) and fixation of the main electrodes are also made easy, thereby improving the assemblability. Moreover, the gap between the main electrodes of the same potential can be reduced, and the gap between the bonded first semiconductor device 1 and the second semiconductor device 2 can be reduced, so that the assemblability of the semiconductor device can be simplified and the semiconductor device can be miniaturized.

[0070] <Implementation Method 2>

[0071] Fig.11 1 is a cross-sectional view showing the structure of the first semiconductor device 1 and the second semiconductor device 2 according to the second embodiment. Hereinafter, the structure of the second embodiment that is different from the structure of the first embodiment will be mainly described.

[0072] exist Fig.11In the embodiment, at least one of the N main electrode 22 and the P main electrode 23 of the second semiconductor device 2 is provided with a recess 31a, and at least one of the N main electrode 13 and the P main electrode 12 of the first semiconductor device 1 is provided with a protrusion 32a that fits with the recess 31a. Fig.11 In the embodiment, the output terminal 24 of the second semiconductor device 2 is provided with a recessed portion 31 b , and the output terminal 14 of the first semiconductor device 1 is provided with a protruding portion 32 b that fits into the recessed portion 31 b .

[0073] In addition, you can also Fig.11 Conversely, a concave portion is provided in at least one of the P main electrode 12 and the N main electrode 13 of the first semiconductor device 1, and a convex portion that fits into the concave portion is provided in at least one of the P main electrode 23 and the N main electrode 22 of the second semiconductor device 2. In addition, the concave portion and the convex portion may be a plurality of tiny concave-convex portions or may be sawtooth-shaped.

[0074] According to the semiconductor device involved in the second embodiment as described above, it is possible to achieve an improvement in the positioning (alignment) of the first semiconductor device and the second semiconductor device 2 when bonding, and an improvement in thermal conductivity due to an increase in the contact area between the main electrodes. In addition, when a grease is provided between the main electrodes, the contact area between the main electrodes and the grease can be increased, thereby achieving an improvement in thermal conductivity.

[0075] <Implementation Method 3>

[0076] Fig.12 It is a cross-sectional view showing the structure of the first semiconductor device 1 and the second semiconductor device 2 according to the present embodiment 3. Hereinafter, the structure of the present embodiment 3 that is different from the structures of the embodiments 1 and 2 will be mainly described.

[0077] In the third embodiment, the first semiconductor device 1 and the second semiconductor device 2 are provided with a first positioning portion on the respective packaging components 15 and 25, which can position (align) the first semiconductor device 1 and the second semiconductor device 2. The first positioning portion may be, for example, Fig.12 Such recessed and convex parts may also be holes or grooves for screw fastening, which are not shown in the figure. Fig.12 In the example, although the first positioning portion, namely the recessed portion 33, is provided in the packaging component 25 and the first positioning portion, namely the convex portion 34 is provided in the packaging component 15, the recessed portion may be provided in the packaging component 15 and the convex portion may be provided in the packaging component 25.

[0078] According to the semiconductor device according to the third embodiment as described above, it is possible to improve the positioning property (alignment property) when bonding the first semiconductor device 1 and the second semiconductor device 2 together.

[0079] <Implementation Method 4>

[0080] Fig.13 1 is a plan view showing the structure of the second semiconductor device 2 according to the fourth embodiment. The second semiconductor device 2 according to the fourth embodiment has not only the components described in the first to third embodiments but also a dummy portion 27 a of the signal terminal portion 27 .

[0081] The dummy portion 27a protrudes outward from the side of the package component 25 similarly to the signal terminal portion 27. In addition, the dummy portion 27a is provided with a second positioning portion that can position (align) the first semiconductor device 1 and the second semiconductor device 2. Fig.13 In the example, the annular portion 27b as the second positioning portion is disposed on the dummy portion 27a of the second semiconductor device 2. Although not shown, the first semiconductor device 1 also has a dummy portion similar to the dummy portion 27a, and the annular portion as the second positioning portion is disposed on the dummy portion.

[0082] According to the semiconductor device according to the fourth embodiment as described above, it is possible to improve the positioning property (alignment property) when bonding the first semiconductor device and the second semiconductor device 2 together.

[0083] <Implementation method 5>

[0084] In the first to fourth embodiments, a metal plate containing Cu (copper) may be provided between the first semiconductor device 1 and the second semiconductor device 2. For example, the metal plate is patterned so that the electrical connection between the P main electrodes 12 and 23, the electrical connection between the N main electrodes 13 and 22, and the electrical connection between the output terminals 14 and 24 are maintained while the insulation between these three electrical connections is maintained. According to the semiconductor device involved in the fifth embodiment, the heat dissipation and rigidity can be improved.

[0085] <Implementation Method 6>

[0086] In the fifth embodiment, the metal plate disposed between the first semiconductor device 1 and the second semiconductor device 2 may also contain Mo (molybdenum) instead of Cu. In addition, since the metal plate contains a Mo alloy, the metal plate may also contain Mo. According to the semiconductor device involved in the sixth embodiment, the rigidity can be further improved. As a result, the deformation of the semiconductor device due to heat can be suppressed, and the reliability of the semiconductor device can be improved.

[0087] <Implementation Method 7>

[0088] A sheet containing resin or carbon having a higher heat dissipation than the packaging components 15 and 25 may be provided between the first semiconductor device 1 and the second semiconductor device 2 in the first to fourth embodiments, or a grease may be provided, or the first semiconductor device 1 and the second semiconductor device 2 may be soldered. With such a structure, the adhesion and heat dissipation can be improved.

[0089] <Implementation Method 8>

[0090] In embodiments 1 to 7, Figure 1 The insulating plates 70a and 70b may be sheet-shaped insulating plates made of resin. According to such a structure, it is possible to suppress the breakage and cracking that would occur when the insulating plates 70a and 70b are made of ceramic resin, thereby improving the reliability of heat conduction.

[0091] <Implementation Method 9>

[0092] Fig.14 2 is a cross-sectional view showing the structure of a semiconductor device according to Embodiment 9. Hereinafter, the structure of Embodiment 9 that is different from the structures of Embodiments 1 to 8 will be mainly described.

[0093] The semiconductor device according to the ninth embodiment includes circuit boards 72 a and 72 b .

[0094] The circuit substrate 72a is disposed on the upper surface of the bonded first semiconductor device 1 and the second semiconductor device 2 (hereinafter sometimes referred to as "device bonding structure"). The circuit substrate 72a includes an insulating plate 70a and a metal plate 71a, and the metal plate 71a is disposed between the insulating plate 70a and the device bonding structure.

[0095] Similarly, the circuit board 72b is disposed on the lower surface of the device bonding structure. The circuit board 72b includes an insulating plate 70b and a metal plate 71b, and the metal plate 71b is disposed between the insulating plate 70b and the device bonding structure.

[0096] According to the structure of the semiconductor device according to the ninth embodiment, not only can the grease between the insulating plates 70 a and 70 b and the device bonding structure be omitted, but also the heat dissipation can be improved.

[0097] <Implementation Method 10>

[0098] Fig.15 1 is a cross-sectional view showing the structure of a semiconductor device according to Embodiment 10. Hereinafter, the structure of Embodiment 10 that is different from the structures of Embodiments 1 to 9 will be mainly described.

[0099] The semiconductor device according to the tenth embodiment includes a circuit substrate 74 a with fins.

[0100] The circuit substrate with fins 74a is disposed on the upper surface of the device bonding structure. The circuit substrate with fins 74a includes the same structure as in Embodiment 9 ( Fig.14 ) The same insulating plate 70a and metal plate 71a are provided, and include a fin substrate 73a arranged on the opposite side of the metal plate 71a relative to the insulating plate 70a. The cooling fin 80a is combined with the finned circuit substrate 74a via a packaging component 81a such as an O-ring.

[0101] According to the structure of the semiconductor device according to the tenth embodiment, the heat dissipation can be improved. Fig.15 Although not shown, the structure on the lower side of the device bonding structure can also apply the same structure as the above-mentioned circuit substrate with fins 74a, cooling fins 80a and packaging component 81a.

[0102] <Implementation Method 11>

[0103] In Embodiments 1 to 10, at least one of the semiconductor elements 11a, 11b, 21a, and 21b may include SiC (silicon carbide) or GaN (gallium nitride). With such a structure, it is possible to achieve miniaturization and high efficiency of the semiconductor device.

[0104] <Implementation Method 12>

[0105] In embodiments 1 to 11, Figure 8 In the case where the first semiconductor device 1 is disposed on the second semiconductor device 2 as shown, the N main electrode 22 of the second semiconductor device 2 and the N main electrode 13 of the first semiconductor device 1 can be integrated by welding. Conversely, in the case where the second semiconductor device 2 is disposed on the first semiconductor device 1, the P main electrode 12 of the first semiconductor device 1 and the P main electrode 23 of the second semiconductor device 2 can be integrated by welding. According to such a structure, screws for screw fastening are not required, so the number of components required for the semiconductor device can be reduced.

[0106] <Implementation Method 13>

[0107] Fig.16 is a cross-sectional view showing the structure of the first semiconductor device 1 according to the thirteenth embodiment. Fig.17 is a plan view of the structure. Fig.16 Illustration of semiconductor elements and the like are omitted. Fig.17 (a) is a plan view of the first semiconductor device 1 as viewed from the upper side. Fig.17(b) is a plan view of the first semiconductor device 1 as viewed from the bottom. Hereinafter, the structure of the thirteenth embodiment that is different from the structures of the first to twelfth embodiments will be mainly described.

[0108] In the present embodiment 13, the package member 15 of the first semiconductor device 1 is provided with a through hole 86a extending in the vertical direction. The shape of the through hole 86a when viewed from above is not limited to the shape of the through hole 86a. Fig.17 The quadrilateral shown may also be other polygons or a circle.

[0109] According to the semiconductor device involved in the present embodiment 13, the heat dissipation can be improved. In the above description, the through hole 86a extending in the vertical direction is provided in the package component 15 of the first semiconductor device 1, but the present invention is not limited to this. For example, a through hole extending in the vertical direction may be provided in at least one of the package component 15 of the first semiconductor device 1 and the package component 25 of the second semiconductor device 2.

[0110] <Implementation Method 14>

[0111] Fig.18 is a cross-sectional view showing the structure of a semiconductor device according to Embodiment 14. Fig.18 Zhongyu Fig.16 Similarly, illustration of semiconductor elements is omitted. Hereinafter, the structure of the present embodiment 14 that is different from the structure of the embodiment 13 will be mainly described.

[0112] In the fourteenth embodiment, similarly to the thirteenth embodiment, the through hole 86a extending in the vertical direction is provided in the package member 15 of the first semiconductor device 1. In addition, the through hole 86b extending in the vertical direction is also provided in the package member 25 of the second semiconductor device 2.

[0113] Furthermore, the semiconductor device according to the fourteenth embodiment includes a fitting member 87 that fits into the through hole 86a of the first semiconductor device 1 and the through hole 86b of the second semiconductor device 2. The fitting member 87 may be a metal member with an insulating surface or an insulating member. With such a structure, the positioning (alignment) of the first semiconductor device and the second semiconductor device 2 during bonding can be improved.

[0114] In addition, if Fig.18 As shown, the fitting member 87 may be fastened to the cooling fins 80a and 80b or may be integrated. According to such a structure, when the fitting member 87 is a metal member with an insulating surface, the heat dissipation can be improved.

[0115] <Implementation Method 15>

[0116] Fig.19 FIG. 1 is a cross-sectional view showing the structure of a semiconductor device according to Embodiment 15. Fig.19 Zhongyu Fig.16 Similarly, illustration of semiconductor elements is omitted. Hereinafter, the structure of the fifteenth embodiment will be mainly described with respect to the parts that are different from the structure of the fourteenth embodiment.

[0117] In the fifteenth embodiment, a space 87a for circulating a coolant such as cooling water is provided inside the fitting member 87. For example, an insulating tube is used for the fitting member 87. Fig.19 In FIG. 1 , an arrow shows an example of the direction in which the refrigerant moves. According to such a structure, the heat dissipation can be improved. Fig.19 As shown in FIG. 1 , the cooling fins 80 a and 80 b may be provided with spaces 80 c and 80 d for circulating the refrigerant that communicate with the space 87 a of the fitting member 87 .

[0118] In addition, each embodiment and each modification example can be freely combined, and each embodiment and each modification example can be appropriately modified or omitted.

[0119] The above description is intended in all respects to be illustrative rather than restrictive, and it should be understood that numerous variations not shown in the examples are conceivable.

[0120] Description of the label

[0121] 1 first semiconductor device, 2 second semiconductor device, 11a, 11b, 21a, 21b semiconductor element, 12, 23P main electrode, 12a, 23a P connecting portion, 12b, 23b P main portion, 13, 22N main electrode, 13a, 22a N connecting portion, 13b, 22b N main body part, 14, 24 output terminal, 14a, 24a output connection part, 14b, 24b output main body part, 15, 25 packaging part, 27 signal terminal part, 27a dummy part, 27b annular part, 31a, 33 recessed part, 32a, 34 protruding part, 60a, 60c grease, 70a, 70b insulating plate, 71a, 71b metal plate, 72a, 72b circuit substrate, 73a circuit substrate with fins, 80a, 80b cooling fins, 81a sealing part, 86a, 86b through holes, 87 fitting part, 87a space.

Claims

1. A semiconductor device comprising a first semiconductor device and a second semiconductor device which can be bonded to each other, The first semiconductor device and the second semiconductor device each include: Semiconductor components; a first electrode having a first connection portion and a first main portion, wherein the first connection portion is disposed on a first side of the semiconductor element in a bonding direction of the first semiconductor device and the second semiconductor device, that is, in a vertical direction, and is connected to the semiconductor element, and the first main portion is disposed on a side of the semiconductor element and is connected to the first connection portion; a second electrode having a second connection portion and a second main portion, wherein the second connection portion is disposed on a second side in the up-down direction relative to the semiconductor element and connected to the semiconductor element, and the second main portion is disposed on the side of the semiconductor element and connected to the second connection portion; as well as a holding member that holds the semiconductor element, the first electrode, and the second electrode, and exposes the first side surface of the first electrode and the second side surface of the second electrode, At least one of the first electrode of the first semiconductor device and the second electrode of the second semiconductor device and the second electrode of the first semiconductor device and the first electrode of the second semiconductor device is electrically connected, In each of the first semiconductor device and the second semiconductor device, a thickness of a portion from the first connection portion to the second connection portion and a thickness of the holding member are respectively less than or equal to a thickness of the first main body portion or a thickness of the second main body portion.

2. The semiconductor device according to claim 1, wherein The first semiconductor device and the second semiconductor device each further include an output terminal, the output terminal having a third connection portion and a third main portion, the third connection portion being connected to the semiconductor element, the third main portion being disposed on a side of the semiconductor element and connected to the third connection portion, The output terminal of the first semiconductor device is electrically connected to the output terminal of the second semiconductor device. For each of the first semiconductor device and the second semiconductor device, the thickness of the portion from the first connecting portion to the second connecting portion and the thickness of the retaining member are respectively less than or equal to the thickness of the first main body portion, the thickness of the second main body portion, or the thickness of the third main body portion.

3. The semiconductor device according to claim 2, wherein: For each of the first semiconductor device and the second semiconductor device, There is no step between the first side surfaces of the first connecting portion, the first main body portion, the second main body portion, the third main body portion, and the holding member. There is no step between the second side surfaces of the second connection portion, the first main body portion, the second main body portion, the third main body portion, and the holding member.

4. The semiconductor device according to any one of claims 1 to 3, wherein: A recess is provided in at least one of the first electrode and the second electrode of one of the first semiconductor device and the second semiconductor device. A convex portion that fits into the concave portion is disposed on at least one of the first electrode and the second electrode of the other of the first semiconductor device and the second semiconductor device.

5. The semiconductor device according to any one of claims 1 to 3, wherein: The holding members of the first semiconductor device and the second semiconductor device are each provided with a first positioning portion capable of positioning the first semiconductor device and the second semiconductor device.

6. The semiconductor device according to any one of claims 1 to 3, wherein: The first semiconductor device and the second semiconductor device each further include a dummy portion that protrudes outward similarly to the signal terminal portion that protrudes outward from the side portion of the holding member and does not function as the signal terminal portion. A second positioning portion capable of positioning the first semiconductor device and the second semiconductor device is disposed on the dummy portion of each of the first semiconductor device and the second semiconductor device.

7. The semiconductor device according to any one of claims 1 to 3, wherein: A metal plate is disposed between the first semiconductor device and the second semiconductor device.

8. The semiconductor device according to claim 7, wherein: The metal plate includes Cu or Mo.

9. The semiconductor device according to any one of claims 1 to 3, wherein: A sheet containing resin or carbon having a higher heat dissipation property than the holding member is disposed between the first semiconductor device and the second semiconductor device, or a grease is disposed, or the first semiconductor device and the second semiconductor device are soldered.

10. The semiconductor device according to any one of claims 1 to 3, wherein: A sheet-shaped insulating plate made of resin is further provided, and the insulating plate is disposed on at least one of the first side surface and the second side surface of the bonded first semiconductor device and second semiconductor device via a grease.

11. The semiconductor device according to any one of claims 1 to 3, wherein: There is also a circuit substrate disposed on at least one of the first side surface and the second side surface of the bonded first semiconductor device and the second semiconductor device, and including an insulating plate and a metal plate.

12. The semiconductor device according to any one of claims 1 to 3, wherein: Also features: a fin circuit substrate disposed on at least one of the first side surface and the second side surface of the bonded first semiconductor device and the second semiconductor device; and The cooling fin is combined with the circuit substrate with fins via a packaging component.

13. The semiconductor device according to any one of claims 1 to 3, wherein: The semiconductor element includes SiC or GaN.

14. The semiconductor device according to any one of claims 1 to 3, wherein: At least one of the first electrode of the first semiconductor device and the second electrode of the second semiconductor device and the second electrode of the first semiconductor device and the first electrode of the second semiconductor device are integrated by welding.

15. The semiconductor device according to any one of claims 1 to 3, wherein: A through hole extending in the up-down direction is provided in at least one of the holding member of the first semiconductor device and the holding member of the second semiconductor device.

16. The semiconductor device according to claim 15, wherein: The holding member of the first semiconductor device and the holding member of the second semiconductor device are respectively provided with the through hole. The semiconductor device further includes a fitting member that fits into the through hole of the first semiconductor device and the through hole of the second semiconductor device.

17. The semiconductor device according to claim 16, wherein: A space through which a refrigerant flows is provided inside the fitting component.

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