Drive circuit, drive chip and motor drive device

Abstract

This application provides a driving circuit, a driving chip, and a motor driving device. The driving circuit includes a full-bridge unit, a switching unit, and a driving unit. The first terminal of the switching unit is electrically connected to a first power supply, the second terminal of the switching unit is electrically connected to the first terminal of a first energy storage unit, and the third terminal of the switching unit is electrically connected to the power supply terminal of the driving unit and the first terminal of the second energy storage unit. The source of the target upper transistor in the full-bridge unit is electrically connected to the second terminal of the first energy storage unit. The second terminal of the second energy storage unit and the drains of all upper transistors in the full-bridge unit are electrically connected to the second power supply. The sources of all upper transistors and the drains of all lower transistors in the full-bridge unit are correspondingly electrically connected, and the sources of all lower transistors in the full-bridge unit are grounded. Multiple signal output terminals of the driving unit are correspondingly electrically connected to the control terminal of the switching unit, the gates of all upper transistors and the gates of all lower transistors in the full-bridge unit, which can solve the problem of high on-resistance of the upper transistors in the full-bridge circuit.

Description

Technical Field

[0001] This application belongs to the field of motor drive technology, and in particular relates to a drive circuit, a drive chip, and a motor drive device. Background Technology

[0002] Three-phase motors are typically driven by a full-bridge circuit. This circuit includes multiple MOS (Metal Oxide Semiconductor) switches, each with upper and lower transistors. The drains of all upper transistors are electrically connected to the power supply, and the sources of all upper transistors are electrically connected to the drains of all lower transistors. The sources of all lower transistors are grounded. When driving a three-phase motor with a full-bridge circuit, the upper transistors exhibit high on-resistance, leading to energy waste. Summary of the Invention

[0003] This application provides a driving circuit, a driving chip, and a motor driving device, which can solve the problem of high on-resistance of the upper transistor in a full-bridge circuit.

[0004] In a first aspect, embodiments of this application provide a driving circuit, including a full-bridge unit, a switching unit, and a driving unit. A first terminal of the switching unit is electrically connected to a first power supply, a second terminal of the switching unit is electrically connected to a first terminal of a first energy storage unit, and a third terminal of the switching unit is electrically connected to the power supply terminal of the driving unit and the first terminal of the second energy storage unit. The source of a target upper transistor in the full-bridge unit is electrically connected to the second terminal of the first energy storage unit. The target upper transistor is any one of the upper transistors in the full-bridge unit. The second terminal of the second energy storage unit and the drains of all upper transistors in the full-bridge unit are electrically connected to a second power supply. The sources of all upper transistors and the drains of all lower transistors in the full-bridge unit are electrically connected one-to-one. The sources of all lower transistors in the full-bridge unit are grounded. Multiple signal output terminals of the driving unit are electrically connected one-to-one to the control terminal of the switching unit, the gates of all upper transistors in the full-bridge unit, and the gates of all lower transistors in the full-bridge unit.

[0005] When the first and second terminals of the switching unit are connected and the lower tube electrically connected to the target upper tube is connected, the first energy storage unit is charged, and the voltage at the first terminal of the first energy storage unit is the voltage of the first power supply; when the second and third terminals of the switching unit are connected and the target upper tube is connected, the voltage at the first terminal of the first energy storage unit is the sum of the voltage of the first power supply and the voltage of the second power supply; the voltage of the driving signal output by the signal output terminal electrically connected to the upper tube in the driving unit is equal to the voltage at the power supply terminal of the driving unit; the second energy storage unit is used to maintain the voltage at the power supply terminal of the driving unit as the sum of the voltage of the first power supply and the voltage of the second power supply.

[0006] In one possible implementation of the first aspect, the switching unit includes a first switch and a second switch;

[0007] The first terminal of the first switch is used to be electrically connected to the first power source. The second terminal of the first switch is electrically connected to the first terminal of the second switch and the first terminal of the first energy storage unit, respectively. The second terminal of the second switch is electrically connected to the power supply terminal of the drive unit. The control terminals of the first switch and the second switch are respectively electrically connected to the corresponding signal output terminals in the drive unit.

[0008] In one possible implementation of the first aspect, the full-bridge unit includes a first upper tube, a second upper tube, a third upper tube, a first lower tube, a second lower tube, and a third lower tube;

[0009] The drains of the first upper transistor, the second upper transistor, and the third upper transistor are all electrically connected to the second power supply. The source of the first upper transistor is electrically connected to the drain of the first lower transistor, the source of the second upper transistor is electrically connected to the drain of the second lower transistor, and the source of the third upper transistor is electrically connected to the drain of the third lower transistor. The sources of the first lower transistor, the second lower transistor, and the third lower transistor are all grounded. The gates of the first upper transistor, the second upper transistor, the third upper transistor, the first lower transistor, the second lower transistor, and the third lower transistor are respectively electrically connected to the corresponding signal output terminals in the driving unit. The drains of the first upper transistor, the second upper transistor, or the third upper transistor are electrically connected to the second terminal of the first energy storage unit.

[0010] In one possible implementation of the first aspect, the first upper transistor, the second upper transistor, the third upper transistor, the first lower transistor, the second lower transistor, and the third lower transistor are all MOS transistors.

[0011] In one possible implementation of the first aspect, the drive circuit further includes a first energy storage unit.

[0012] In one possible implementation of the first aspect, the first energy storage unit includes a first capacitor;

[0013] The first terminal of the first capacitor is electrically connected to the second terminal of the switching unit, and the second terminal of the first capacitor is electrically connected to the source of any one of the upper transistors in the full-bridge unit.

[0014] In one possible implementation of the first aspect, the drive circuit further includes a second energy storage unit.

[0015] In one possible implementation of the first aspect, the second energy storage unit includes a second capacitor;

[0016] The first end of the second capacitor is electrically connected to the power supply terminal of the driving unit and the third end of the switching unit, respectively, and the second end of the second capacitor is electrically connected to the second power supply.

[0017] Secondly, embodiments of this application provide a driver chip, including a first power supply pin, a second power supply pin, a first energy storage pin, a second energy storage pin, a first motor pin, a second motor pin, a third motor pin, and a driver circuit as described in any one of the first aspects;

[0018] The first power supply pin is electrically connected to the first terminal of the switching unit, the second power supply pin is electrically connected to the drain of all the upper transistors in the full-bridge unit, the first energy storage pin is electrically connected to the second terminal of the switching unit, the second energy storage pin is electrically connected to the third terminal of the switching unit, and the first motor pin, the second motor pin, and the third motor pin are respectively electrically connected to the source of the corresponding upper transistor in the full-bridge unit.

[0019] Thirdly, embodiments of this application provide a motor drive device, including the drive chip described in the second aspect.

[0020] The beneficial effects of the embodiments in this application compared with the prior art are:

[0021] This application provides a driving circuit, including a full-bridge unit, a switching unit, and a driving unit. A first terminal of the switching unit is electrically connected to a first power supply, a second terminal of the switching unit is electrically connected to a first terminal of a first energy storage unit, and a third terminal of the switching unit is electrically connected to the power supply terminal of the driving unit and the first terminal of the second energy storage unit. The source of a target upper transistor in the full-bridge unit is electrically connected to the second terminal of the first energy storage unit. The target upper transistor can be any upper transistor in the full-bridge unit. The second terminal of the second energy storage unit and the drains of all upper transistors in the full-bridge unit are electrically connected to a second power supply. The sources of all upper transistors and the drains of all lower transistors in the full-bridge unit are electrically connected one-to-one. The sources of all lower transistors in the full-bridge unit are grounded. Multiple signal output terminals of the driving unit are electrically connected one-to-one to the control terminal of the switching unit, the gates of all upper transistors in the full-bridge unit, and the gates of all lower transistors in the full-bridge unit.

[0022] When the first and second terminals of the switching unit are connected, and the lower tube electrically connected to the target upper tube is connected, the first terminal of the first energy storage unit is connected to the first power supply, and the second terminal of the first energy storage unit is connected to ground, thus charging the first energy storage unit. After the first energy storage unit has completed charging, the voltage at the first terminal of the first energy storage unit is the voltage of the first power supply.

[0023] When the second and third terminals of the switching unit are connected and the target upper transistor is on, the first terminal of the first energy storage unit is connected to the power supply terminal of the driving unit through the switching unit, and the second terminal of the first energy storage unit is connected to the second power supply through the target upper transistor. Since the voltage difference between the first and second terminals of the first energy storage unit cannot change abruptly, the voltage at the second terminal of the first energy storage unit becomes the sum of the voltage of the first power supply and the voltage of the second power supply. The first terminal of the first energy storage unit is connected to the power supply terminal of the driving unit, and the voltage at the power supply terminal of the driving unit is the sum of the voltage of the first power supply and the voltage of the second power supply. Since the voltage of the drive signal output terminal electrically connected to the upper transistor in the driving unit is equal to the voltage of the power supply terminal of the driving unit, when the driving unit drives the target upper transistor, the voltage applied by the driving unit to the gate of the target upper transistor is the sum of the voltage of the first power supply and the voltage of the second power supply, which increases the voltage difference between the gate and source of the target upper transistor, thereby reducing the on-resistance of the target upper transistor and reducing energy waste.

[0024] When the second and third terminals of the switching unit are turned on, the first terminals of the second energy storage unit and the first energy storage unit are also turned on. When the voltage at the first terminal of the first energy storage unit becomes the sum of the voltage of the first power supply and the voltage of the second power supply, the voltage at the first terminal of the second energy storage unit also becomes the sum of the voltage of the first power supply and the voltage of the second power supply. When the driving unit drives the upper transistor other than the target upper transistor in the full-bridge unit, the voltage at the first terminal of the second energy storage unit is basically maintained at the sum of the voltage of the first power supply and the voltage of the second power supply. This keeps the voltage at the power supply terminal of the driving unit at the sum of the voltage of the first power supply and the voltage of the second power supply. The voltage of the driving signal output by the signal output terminal of the driving unit is the sum of the voltage of the first power supply and the voltage of the second power supply. This increases the voltage difference between the gate and source of the upper transistor to be driven in the full-bridge unit, thereby reducing the on-resistance of the upper transistor to be driven and reducing energy waste.

[0025] Therefore, the driving circuit provided in this application embodiment can reduce the on-resistance of all upper transistors in the full-bridge unit, thereby reducing energy waste.

[0026] It is understood that the beneficial effects of the second and third aspects mentioned above can be found in the relevant descriptions in the first aspect above, and will not be repeated here. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1This is a schematic block diagram of a driving circuit provided in one embodiment of this application;

[0029] Figure 2 This is a schematic diagram of the connection of a driving circuit provided in an embodiment of this application;

[0030] Figure 3 This is a connection diagram of a driving unit provided in an embodiment of this application;

[0031] Figure 4 This is a connection diagram of the driver chip provided in one embodiment of this application during application;

[0032] Figure 5 This is a connection diagram of the driver chip provided in another embodiment of this application.

[0033] 100. Switching unit; 200. Drive unit; 300. Full-bridge unit; 400. First energy storage unit; 500. Second energy storage unit; 600. First power supply; 700. Second power supply; 800. Three-phase motor; 10. Drive chip. Detailed Implementation

[0034] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application may also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods have been omitted so as not to obscure the description of this application with unnecessary detail.

[0035] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0036] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0037] As used in this application specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrase "if determined" or "if [the described condition or event] is detected" may be interpreted, depending on the context, as "once determined," "in response to determination," "once [the described condition or event] is detected," or "in response to detection of [the described condition or event]."

[0038] Furthermore, in the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0039] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0040] Figure 1 A schematic block diagram of a driving circuit according to an embodiment of this application is shown. See also Figure 1 As shown, the driving circuit includes a switching unit 100, a driving unit 200, and a full-bridge unit 300. The first terminal of the switching unit 100 is electrically connected to the first power supply 600, the second terminal of the switching unit 100 is electrically connected to the first terminal of the first energy storage unit 400, and the third terminal of the switching unit 100 is electrically connected to the power supply terminal of the driving unit 200 and the first terminal of the second energy storage unit 500. The source of the target upper transistor in the full-bridge unit 300 is electrically connected to the second terminal of the first energy storage unit 400. The target upper transistor can be any upper transistor in the full-bridge unit 300. The second terminal of the second energy storage unit 500 and the drains of all upper transistors in the full-bridge unit 300 are electrically connected to the second power supply 700. The sources of all upper transistors and the drains of all lower transistors in the full-bridge unit 300 are electrically connected one-to-one. The sources of all lower transistors in the full-bridge unit 300 are grounded. The multiple signal output terminals of the drive unit 200 are electrically connected to the control terminal of the switch unit 100, the gates of all upper transistors in the full-bridge unit 300, and the gates of all lower transistors in the full-bridge unit 300, respectively.

[0041] Specifically, in actual use of the drive circuit, the sources of all the upper transistors in the full-bridge unit 300 are electrically connected to the three terminals of the three-phase motor 800 one by one. When the first and second terminals of the switching unit 100 are connected and the lower transistor, which is electrically connected to the target upper transistor, is connected, the first terminal of the first energy storage unit is connected to the first power supply 600, the second terminal of the first energy storage unit 400 is connected to ground, and the first energy storage unit 400 is charged. After the first energy storage unit 400 has completed charging, the voltage at the first terminal of the first energy storage unit 400 is the voltage of the first power supply 600.

[0042] When the second and third terminals of the switching unit 100 are connected and the target upper transistor is connected, the first terminal of the first energy storage unit 400 is connected to the power supply terminal of the driving unit 200 through the switching unit 100, and the second terminal of the first energy storage unit 400 is connected to the second power supply 700 through the target upper transistor. Since the voltage difference between the first and second terminals of the first energy storage unit 400 cannot change abruptly, the voltage at the second terminal of the first energy storage unit 400 becomes the sum of the voltage of the first power supply 600 and the voltage of the second power supply 700. The first terminal of the first energy storage unit is connected to the power supply terminal of the driving unit 200, and the voltage at the power supply terminal of the driving unit 200 is the sum of the voltage of the first power supply 600 and the voltage of the second power supply 700. Since the voltage of the drive signal output from the output terminal of the drive unit 200, which is electrically connected to the upper transistor, is equal to the voltage of the power supply terminal of the drive unit 200, when the drive unit 200 drives the target upper transistor, the voltage applied by the drive unit 200 to the gate of the target upper transistor is the sum of the voltage of the first power supply 600 and the voltage of the second power supply 700. This increases the voltage difference between the gate and source of the target upper transistor, thereby reducing the on-resistance of the target upper transistor and reducing energy waste.

[0043] When the second and third terminals of the switching unit 100 are connected, the first terminals of the second energy storage unit 500 and the first terminals of the first energy storage unit 400 are connected. When the voltage of the first terminal of the first energy storage unit 400 becomes the sum of the voltage of the first power supply 600 and the voltage of the second power supply 700, the voltage of the first terminal of the second energy storage unit 500 also becomes the sum of the voltage of the first power supply 600 and the voltage of the second power supply 700. When the driving unit 200 drives the upper transistor other than the target upper transistor in the full-bridge unit 300, the voltage at the first terminal of the second energy storage unit 500 is basically maintained as the sum of the voltage of the first power supply 600 and the voltage of the second power supply 700. This keeps the voltage at the power supply terminal of the driving unit 200 at the sum of the voltage of the first power supply 600 and the voltage of the second power supply 700. The voltage of the driving signal output by the signal output terminal of the driving unit 200 is the sum of the voltage of the first power supply 600 and the voltage of the second power supply 700. This increases the voltage difference between the gate and source of the upper transistor to be driven in the full-bridge unit 300, thereby reducing the on-resistance of the upper transistor to be driven and reducing energy waste.

[0044] Therefore, the driving circuit provided in this application embodiment can reduce the on-resistance of all upper transistors in the full-bridge unit 300, thereby reducing energy waste.

[0045] like Figure 2As shown, the switching unit 100 includes a first switch K1 and a second switch K2. The first end of the first switch K1 is electrically connected to the first power supply VDD. The second end of the first switch K1 is electrically connected to the first end of the second switch K2 and the first end of the first energy storage unit 400, respectively. The second end of the second switch K2 is electrically connected to the power supply end of the drive unit 200. The control ends of the first switch K1 and the second switch K2 are electrically connected to the corresponding signal output ends in the drive unit 200, respectively.

[0046] Specifically, when the drive unit 200 controls the first switch K1 to be turned on, the second switch K2 to be turned off, and the target upper tube to be turned on, the first and second terminals of the switch unit 100 are connected, the first terminal of the first energy storage unit 400 is connected to the first power supply VDD, and the second terminal of the first energy storage unit 400 is connected to ground. At this time, the first energy storage unit 400 is charging. When the first energy storage unit 400 is fully charged, the voltage at the first terminal of the first energy storage unit 400 is the voltage of the first power supply VDD.

[0047] When the drive unit 200 controls the first switch K1 to open, the second switch K2 to open, and the lower tube electrically connected to the target upper tube to open, the second and third terminals of the switch unit 100 are connected. At this time, the first terminal of the first energy storage unit 400 is connected to the power supply terminal of the drive unit 200 and the first terminal of the second energy storage unit 500, respectively. The second terminal of the first energy storage unit 400 is connected to the second power supply VIN, and the voltage of the second terminal of the first energy storage unit 400 is the voltage of the second power supply VIN. Since the voltage difference between the first and second terminals of the first energy storage unit 400 cannot change abruptly, the voltage of the first terminal of the first energy storage unit 400 becomes the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. Since the first terminal of the first energy storage unit 400 is connected to the power supply terminal of the drive unit 200, the voltage of the power supply terminal of the drive unit 200 is the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. The voltage of the drive signal applied to the target transistor by the drive unit 200 is the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN, which increases the voltage difference between the gate and source of the target transistor, thereby reducing the on-resistance of the target transistor.

[0048] Since the first terminal of the first energy storage unit 400 is also connected to the first terminal of the second energy storage unit 500, when the voltage at the first terminal of the first energy storage unit 400 becomes the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN, the voltage at the first terminal of the second energy storage unit 500 also becomes the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. When the driving unit 200 drives the upper transistor other than the target upper transistor in the full-bridge unit 300, the voltage at the first terminal of the second energy storage unit 500 is basically maintained as the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. This causes the voltage at the power supply terminal of the driving unit 200 to be maintained as the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. The voltage of the driving signal output by the signal output terminal of the driving unit 200 is the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN, increasing the voltage difference between the gate and source of the upper transistor to be driven in the full-bridge unit 300, thereby reducing the on-resistance of the upper transistor to be driven and reducing energy waste.

[0049] The switching unit 100 provided in this embodiment uses only the first switch K1 and the second switch K2, which can reduce the on-resistance of the upper transistor in the full-bridge unit 300. The switching unit 100 provided in this embodiment has a simple circuit structure, which can reduce the cost of the driving circuit in actual production. Furthermore, if the driving circuit provided in this embodiment is packaged into a chip, the number of chip pins can be reduced, further reducing the production cost of the product.

[0050] For example, the first switch K1 and the second switch K2 can be selected as transistors or MOSFETs.

[0051] like Figure 2 As shown, the full-bridge unit 300 includes a first upper tube MN2, a second upper tube MN4, a third upper tube MN6, a first lower tube MN1, a second lower tube MN3, and a third lower tube MN5. The drains of the first upper transistor MN2, the second upper transistor MN4, and the third upper transistor MN6 are all electrically connected to the second power supply VIN. The source of the first upper transistor MN2 is electrically connected to the drain of the first lower transistor MN1. The source of the second upper transistor MN4 is electrically connected to the drain of the second lower transistor MN3. The source of the third upper transistor MN6 is electrically connected to the drain of the third lower transistor MN5. The sources of the first lower transistor MN1, the second lower transistor MN3, and the third lower transistor MN5 are all grounded. The gates of the first upper transistor MN2, the second upper transistor MN4, the third upper transistor MN6, the first lower transistor MN1, the second lower transistor MN3, and the third lower transistor MN5 are electrically connected to the corresponding signal output terminals in the driving unit 200. The drains of the first upper transistor MN2, the second upper transistor MN4, or the third upper transistor MN6 are electrically connected to the second terminal of the first energy storage unit 400.

[0052] Specifically, the first upper tube MN2, the second upper tube MN4, the third upper tube MN6, the first lower tube MN1, the second lower tube MN3, and the third lower tube MN5 constitute the drive circuit of the three-phase motor M. The drive unit 200 can drive the three-phase motor M to rotate by periodically controlling the first upper tube MN2, the second upper tube MN4, the third upper tube MN6, the first lower tube MN1, the second lower tube MN3, and the third lower tube MN5 to be turned on or off.

[0053] Since the sources of the first lower transistor MN1, the second lower transistor MN3, and the third lower transistor MN5 are all grounded, when the driving unit 200 applies a driving signal to the gate of the lower transistor to be driven (the first lower transistor MN1, the second lower transistor MN3, or the third lower transistor MN5), the voltage difference between the gate and the source of the lower transistor to be driven is equal to the voltage of the driving signal, ensuring a large voltage difference between the gate and the source of the lower transistor to be driven, thereby reducing the on-resistance of the lower transistor to be driven.

[0054] Since the drains of the first upper transistor MN2, the second upper transistor MN4, and the third upper transistor MN6 are all electrically connected to the second power supply VIN, when the driving unit 200 applies a driving signal to the gate of the upper transistor to be driven (the first upper transistor MN2, the second upper transistor MN4, or the third upper transistor MN6), the upper transistor to be driven turns on. The source voltage of the upper transistor to be driven is the voltage of the second power supply VIN, and the gate voltage of the upper transistor to be driven is the voltage of the driving signal. The voltage difference between the gate and source of the upper transistor to be driven is equal to the difference between the voltage of the driving signal and the voltage of the second power supply VIN. It is not easy to form a large voltage difference between the gate and source of the upper transistor to be driven, which leads to the problem of high on-resistance of the upper transistors in the full-bridge unit 300. Therefore, in this application, the switching unit 100, the first energy storage unit 400 and the second energy storage unit 500 can increase the voltage of the power supply terminal of the driving unit 200, thereby increasing the voltage of the driving signal output by the driving unit 200. When the upper transistor is turned on, the voltage of the gate of the upper transistor is increased, the voltage difference between the gate and the source of the upper transistor is increased, and the on-resistance of the upper transistor is reduced, thereby achieving the effect of reducing energy waste.

[0055] It should be noted that, Figure 2 The target upper tube is the first upper tube MN2. In addition, the target upper tube can also be the second upper tube MN4 or the third upper tube MN6. That is, the second end of the first energy storage unit 400 can also be electrically connected to the drain of the second upper tube MN4 or the drain of the third upper tube MN6.

[0056] For example, the first upper transistor MN2, the second upper transistor MN4, the third upper transistor MN6, the first lower transistor MN1, the second lower transistor MN3, and the third lower transistor MN5 are all MOSFETs.

[0057] Specifically, MOSFETs can stably and quickly switch between on and off states. Using MOSFETs for the first upper transistor MN2, second upper transistor MN4, third upper transistor MN6, first lower transistor MN1, second lower transistor MN3, and third lower transistor MN5 can achieve stable driving of the three-phase motor M. Because N-type MOSFETs are cheaper than P-type MOSFETs, to reduce the overall production cost of the drive circuit, N-type MOSFETs can be used for the first upper transistor MN2, second upper transistor MN4, third upper transistor MN6, first lower transistor MN1, second lower transistor MN3, and third lower transistor MN5.

[0058] To ensure that the first energy storage unit 400 can boost the voltage at the power supply terminal of the drive unit 200 to the sum of the voltages of the first power supply VDD and the second power supply VIN, the first energy storage unit 400 needs to use a capacitor with a large capacity. Similarly, to ensure that the second energy storage unit 500 can maintain the voltage at the power supply terminal of the drive unit 200 at the sum of the voltages of the first power supply VDD and the second power supply VIN, the second energy storage unit 500 also needs to use a capacitor with a large capacity.

[0059] like Figure 2 and Figure 3As shown, the drive unit 200 includes a controller MCU, a first level shifting circuit LevelShifter1, a second level shifting circuit LevelShifter2, a third level shifting circuit LevelShifter3, a fourth level shifting circuit LevelShifter4, a first driver DRV1, a second driver DRV2, a third driver DRV3, a fourth driver DRV4, a fifth driver DRV5, a sixth driver DRV6, a seventh driver DRV7, and an eighth driver DRV8. The first signal output terminal of the controller MCU is electrically connected to the control terminal of the first switch K1 via the first driver DRV1. The second signal output terminal of the controller MCU is electrically connected to the first level shifting circuit LevelShifter1, which in turn is electrically connected to the control terminal of the second switch K2 via the second driver DRV2. The third signal output terminal of the controller MCU is electrically connected to the gate of the first lower transistor MN1 via the third driver DRV3. The fourth signal output terminal of the controller MCU is electrically connected to the second level shifting circuit LevelShifter2, which in turn is electrically connected to the gate of the first upper transistor MN2 via the fourth driver DRV4. The fifth signal output terminal of the controller MCU is electrically connected to the gate of the second lower transistor MN3 via the fifth driver DRV5. The sixth signal output terminal of the controller MCU is electrically connected to the third level shifter circuit LevelShifter3, which is electrically connected to the gate of the second upper transistor MN4 via the sixth driver DRV6. The seventh signal output terminal of the controller MCU is electrically connected to the gate of the third lower transistor MN5 via the seventh driver DRV7. The eighth signal output terminal of the controller MCU is electrically connected to the fourth level shifter circuit LevelShifter4, which is electrically connected to the gate of the third upper transistor MN6 via the eighth driver DRV8. The power supply terminals of the first level shifter circuit LevelShifter1, the second level shifter circuit LevelShifter2, the third level shifter circuit LevelShifter3, and the fourth level shifter circuit LevelShifter4 are all electrically connected to the first terminal of the second energy storage unit 500.

[0060] Specifically, when the controller MCU outputs drive signals from its second, fourth, sixth, and eighth signal output terminals, the drive signals will cause the first level shifting circuit LevelShifter1, the second level shifting circuit LevelShifter2, the third level shifting circuit LevelShifter3, and the fourth level shifting circuit LevelShifter4 to output high-level signals. The voltage of the high-level signals output by the first level shifting circuit LevelShifter1, the second level shifting circuit LevelShifter2, the third level shifting circuit LevelShifter3, and the fourth level shifting circuit LevelShifter4 is the voltage of the power supply terminal. Since the power supply terminals of the first level shifting circuit LevelShifter1, the second level shifting circuit LevelShifter2, the third level shifting circuit LevelShifter3, and the fourth level shifting circuit LevelShifter4 are all electrically connected to the first terminal of the second energy storage unit 500, the voltage of the high-level signal output by the first level shifting circuit LevelShifter1, the second level shifting circuit LevelShifter2, the third level shifting circuit LevelShifter3, and the fourth level shifting circuit LevelShifter4 is the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. This increases the voltage of the gate of the first upper transistor MN2, the gate of the second upper transistor MN4, or the gate of the third upper transistor MN6, ultimately increasing the voltage difference between the gate and source of the upper transistor MN2, the second upper transistor MN4, or the third upper transistor MN6, reducing the on-resistance of the upper transistor, and achieving the effect of reducing energy waste.

[0061] The functions of the first driver DRV1, the second driver DRV2, the third driver DRV3, the fourth driver DRV4, the fifth driver DRV5, the sixth driver DRV6, the seventh driver DRV7, and the eighth driver DRV8 are to increase the driving capability of the circuit, so as to ensure that the first switch K1, the second switch K2, the first upper transistor MN2, the second upper transistor MN4, the third upper transistor MN6, the first lower transistor MN1, the second lower transistor MN3, and the third lower transistor MN5 can be turned on and off normally.

[0062] For example, the first level shifting circuit LevelShifter1, the second level shifting circuit LevelShifter2, the third level shifting circuit LevelShifter3, and the fourth level shifting circuit LevelShifter4 can use existing level shifting circuits, as long as the voltage of the high-level signal output by the first level shifting circuit LevelShifter1, the second level shifting circuit LevelShifter2, the third level shifting circuit LevelShifter3, and the fourth level shifting circuit LevelShifter4 is the voltage of the power supply terminal. Here, the specific circuits of the first level shifting circuit LevelShifter1, the second level shifting circuit LevelShifter2, the third level shifting circuit LevelShifter3, and the fourth level shifting circuit LevelShifter4 are not limited.

[0063] The driver (first driver DRV1, second driver DRV2, third driver DRV3, fourth driver DRV4, fifth driver DRV5, sixth driver DRV6, seventh driver DRV7 or eighth driver DRV) may include multiple inverters connected in series. Designers can select the appropriate size and number of inverters according to their needs.

[0064] The controller MCU can be implemented using an 8051-based processor core, an ARM processor core, or an open-source RISC-V processor core. The logic of its output drive signals can be designed according to actual needs to drive the first switch K1, the second switch K2, the first upper transistor MN2, the second upper transistor MN4, the third upper transistor MN6, the first lower transistor MN1, the second lower transistor MN3, and the third lower transistor MN5, ultimately driving the three-phase motor M. It can also reduce the resistance when the first upper transistor MN2, the second upper transistor MN4, and the third upper transistor MN6 are turned on, thereby reducing energy waste.

[0065] Because large-capacity capacitors are bulky and difficult to package, this application provides a driver chip 10, such as... Figure 4As shown, the driver chip 10 includes a first power supply pin OV1, a second power supply pin OV2, a first energy storage pin VCP1, a second energy storage pin VCP2, a first motor pin OUTA, a second motor pin OUTB, a third motor pin OUTC, and the aforementioned driver circuit. The first power supply pin OV1 is electrically connected to the first terminal of the switching unit 100, the second power supply pin OV2 is electrically connected to the drain of all the upper transistors in the full-bridge unit 300, the first energy storage pin VCP1 is electrically connected to the second terminal of the switching unit 100, the second energy storage pin VCP2 is electrically connected to the third terminal of the switching unit 100, and the first motor pin OUTA, the second motor pin OUTB, and the third motor pin OUTC are respectively electrically connected to the source of the corresponding upper transistor in the full-bridge unit 300.

[0066] Specifically, in actual use, the first power supply pin OV1 in the driver chip 10 is electrically connected to the first power supply VDD, the second power supply pin OV2 is electrically connected to the second power supply VIN and the second terminal of the second energy storage unit 500, the first energy storage pin VCP1 is electrically connected to the first terminal of the first energy storage unit 400, the second energy storage pin VCP2 is electrically connected to the first terminal of the second energy storage unit 500, the first motor pin OUTA, the second motor pin OUTB and the third motor pin OUTC are electrically connected to the three terminals of the three-phase motor M, and any one of the first motor pin OUTA, the second motor pin OUTB or the third motor pin OUTC is electrically connected to the second terminal of the first energy storage unit 400.

[0067] The driver chip 10 provided in this application embodiment reduces the use of electronic components and lowers production costs due to the use of the aforementioned driver circuit. Furthermore, the design of the switching unit 100 in the driver circuit reduces the number of pins used in the driver chip 10, further reducing its production cost. When the driver chip 10 provided in this application embodiment is mass-produced, the resulting production costs can be significantly reduced.

[0068] like Figure 2 As shown, the driving circuit also includes a first energy storage unit 400.

[0069] Specifically, when the first and second terminals of the switching unit 100 are connected and the lower tube, which is electrically connected to the target upper tube, is connected, the first terminal of the first energy storage unit 400 is connected to the first power supply VDD, the second terminal of the first energy storage unit 400 is connected to ground, and the first energy storage unit 400 is charged. After the first energy storage unit 400 has completed charging, the voltage at the first terminal of the first energy storage unit 400 is the voltage of the first power supply VDD.

[0070] When the second and third terminals of the switching unit 100 are connected and the target upper transistor is on, the first terminal of the first energy storage unit 400 is connected to the power supply terminal of the driving unit 200 through the switching unit 100, and the second terminal of the first energy storage unit 400 is connected to the second power supply VIN through the target upper transistor. Since the voltage difference between the first and second terminals of the first energy storage unit 400 cannot change abruptly, the voltage at the second terminal of the first energy storage unit 400 becomes the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. The first terminal of the first energy storage unit is connected to the power supply terminal of the driving unit 200, and the voltage at the power supply terminal of the driving unit 200 is the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. Since the voltage of the drive signal output terminal of the drive unit 200 is equal to the voltage of the power supply terminal of the drive unit 200, when the drive unit 200 drives the target upper transistor, the voltage applied by the drive unit 200 to the gate of the target upper transistor is the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN, which increases the voltage difference between the gate and the source of the target upper transistor, thereby reducing the on-resistance of the target upper transistor and reducing energy waste.

[0071] Through the above logic control, the first energy storage unit 400 can play the role of boosting voltage, so that the voltage at the power supply terminal of the drive unit 200 is increased to the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN, thereby increasing the voltage of the drive signal output by the drive unit 200 and ultimately reducing the on-resistance of the upper transistor in the full-bridge unit 300.

[0072] For example, the first energy storage unit 400 includes a first capacitor, the first end of which is electrically connected to the second end of the switching unit 100, and the second end of which is electrically connected to the source of any one of the upper transistors in the full-bridge unit 300.

[0073] like Figure 2 As shown, the drive circuit also includes a second energy storage unit 500.

[0074] Specifically, when the second and third terminals of the switching unit 100 are turned on, the first terminals of the second energy storage unit 500 and the first energy storage unit 400 are also turned on. When the voltage at the first terminal of the first energy storage unit 400 becomes the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN, the voltage at the first terminal of the second energy storage unit 500 also becomes the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. Thereafter, the voltage at the first terminal of the second energy storage unit 500 remains the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN, ensuring that the voltage at the power supply terminal of the driving unit 200 is the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN. This ensures that the voltage of the driving signal output by the driving unit 200 is the sum of the voltage of the first power supply VDD and the voltage of the second power supply VIN, thereby increasing the voltage difference between the gate and source of the upper transistor in the full-bridge unit 300 and reducing the on-resistance of the upper transistor.

[0075] For example, the second energy storage unit 500 includes a second capacitor, the first end of which is electrically connected to the power supply terminal of the drive unit 200 and the third terminal of the switch unit 100, respectively, and the second end of which is electrically connected to the drain of all the upper transistors in the drive unit 200.

[0076] With technological advancements, large-capacity capacitors can be made very small, allowing the switching unit 100, driving unit 200, first energy storage unit 400, second energy storage unit 500, and full-bridge unit 300 in the driving circuit to be packaged into a single chip. Therefore, this application also provides a driving chip 10, such as... Figure 5 As shown, the driver chip 10 includes a switching unit 100, a driving unit 200, a first energy storage unit 400, a second energy storage unit 500, a full-bridge unit 300, a first power supply pin OV1, a second power supply pin OV2, a first motor pin OUTA, a second motor pin OUTB, and a third motor pin OUTC. The first power supply pin OV1 is electrically connected to the first terminal of the switching unit 100, the second power supply pin OV2 is electrically connected to the drain of all the upper transistors in the driving unit 200, and the first motor pin OUTA, the second motor pin OUTB, and the third motor pin OUTC are respectively electrically connected to the source of the corresponding upper transistor in the full-bridge unit 300.

[0077] Specifically, in actual use, the first power supply pin OV1 in the driver chip 10 is electrically connected to the first power supply VDD, the second power supply pin OV2 is electrically connected to the second power supply VIN and the second terminal of the second energy storage unit 500, the first motor pin OUTA, the second motor pin OUTB and the third motor pin OUTC are electrically connected to the three terminals of the three-phase motor M, and any one of the first motor pin OUTA, the second motor pin OUTB or the third motor pin OUTC is electrically connected to the second terminal of the first energy storage unit 400.

[0078] The driver chip 10 provided in this application embodiment reduces the use of electronic components and lowers production costs due to the use of the aforementioned driver circuit. Furthermore, the design of the switching unit 100 in the driver circuit and the encapsulation of both the first energy storage unit 400 and the second energy storage unit 500 within the chip reduce the number of pins used in the driver chip 10, further lowering its production cost. When mass-producing the driver chip 10 provided in this application embodiment, production costs can be significantly reduced.

[0079] This application embodiment also provides a motor drive device, including the drive chip 10 described above. This motor drive device can reduce the on-resistance of the upper transistor in the full-bridge unit 300, thereby reducing energy waste. For the specific principle, please refer to the description of the drive circuit above, which will not be repeated here.

[0080] Meanwhile, the motor drive device provided in this application embodiment can also reduce the overall cost of the device by using the aforementioned drive chip 10. For the specific principle, please refer to the description of the drive chip 10 above, which will not be repeated here.

[0081] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A driving circuit, characterized in that, The system includes a full-bridge unit, a switching unit, and a driving unit. The first terminal of the switching unit is electrically connected to a first power supply, the second terminal of the switching unit is electrically connected to the first terminal of a first energy storage unit, and the third terminal of the switching unit is electrically connected to the power supply terminal of the driving unit and the first terminal of the second energy storage unit. The source of a target upper transistor in the full-bridge unit is electrically connected to the second terminal of the first energy storage unit. The target upper transistor can be any upper transistor in the full-bridge unit. The second terminal of the second energy storage unit and the drains of all upper transistors in the full-bridge unit are electrically connected to a second power supply. The sources of all upper transistors and the drains of all lower transistors in the full-bridge unit are electrically connected one-to-one. The sources of all lower transistors in the full-bridge unit are grounded. Multiple signal output terminals of the driving unit are electrically connected one-to-one to the control terminal of the switching unit, the gates of all upper transistors in the full-bridge unit, and the gates of all lower transistors in the full-bridge unit. When the first and second terminals of the switching unit are connected and the lower tube electrically connected to the target upper tube is connected, the first energy storage unit is charged, and the voltage at the first terminal of the first energy storage unit is the voltage of the first power supply; when the second and third terminals of the switching unit are connected and the target upper tube is connected, the voltage at the first terminal of the first energy storage unit is the sum of the voltage of the first power supply and the voltage of the second power supply; the voltage of the driving signal output by the signal output terminal electrically connected to the upper tube in the driving unit is equal to the voltage at the power supply terminal of the driving unit; the second energy storage unit is used to maintain the voltage at the power supply terminal of the driving unit as the sum of the voltage of the first power supply and the voltage of the second power supply.

2. The driving circuit according to claim 1, characterized in that, The switching unit includes a first switch and a second switch; The first terminal of the first switch is used to be electrically connected to the first power source. The second terminal of the first switch is electrically connected to the first terminal of the second switch and the first terminal of the first energy storage unit, respectively. The second terminal of the second switch is electrically connected to the power supply terminal of the drive unit. The control terminals of the first switch and the second switch are respectively electrically connected to the corresponding signal output terminals in the drive unit.

3. The driving circuit according to claim 1, characterized in that, The full-bridge unit includes a first upper tube, a second upper tube, a third upper tube, a first lower tube, a second lower tube, and a third lower tube; The drains of the first upper transistor, the second upper transistor, and the third upper transistor are all electrically connected to the second power supply. The source of the first upper transistor is electrically connected to the drain of the first lower transistor, the source of the second upper transistor is electrically connected to the drain of the second lower transistor, and the source of the third upper transistor is electrically connected to the drain of the third lower transistor. The sources of the first lower transistor, the second lower transistor, and the third lower transistor are all grounded. The gates of the first upper transistor, the second upper transistor, the third upper transistor, the first lower transistor, the second lower transistor, and the third lower transistor are respectively electrically connected to the corresponding signal output terminals in the driving unit. The drains of the first upper transistor, the second upper transistor, or the third upper transistor are electrically connected to the second terminal of the first energy storage unit.

4. The driving circuit according to claim 3, characterized in that, The first upper transistor, the second upper transistor, the third upper transistor, the first lower transistor, the second lower transistor, and the third lower transistor are all MOSFETs.

5. The driving circuit according to any one of claims 1-4, characterized in that, The first energy storage unit includes a first capacitor; The first terminal of the first capacitor is electrically connected to the second terminal of the switching unit, and the second terminal of the first capacitor is electrically connected to the source of any one of the upper transistors in the full-bridge unit.

6. The driving circuit according to any one of claims 1-4, characterized in that, The second energy storage unit includes a second capacitor; The first end of the second capacitor is electrically connected to the power supply terminal of the driving unit and the third end of the switching unit, respectively, and the second end of the second capacitor is electrically connected to the second power supply.

7. A driver chip, characterized in that, It includes a first power supply pin, a second power supply pin, a first energy storage pin, a second energy storage pin, a first motor pin, a second motor pin, a third motor pin, and the driving circuit described in any one of claims 1-4; The first power supply pin is electrically connected to the first terminal of the switching unit, the second power supply pin is electrically connected to the drain of all the upper transistors in the full-bridge unit, the first energy storage pin is electrically connected to the second terminal of the switching unit, the second energy storage pin is electrically connected to the third terminal of the switching unit, and the first motor pin, the second motor pin, and the third motor pin are respectively electrically connected to the source of the corresponding upper transistor in the full-bridge unit.

8. A motor drive device, characterized in that, Includes the driver chip as described in claim 7.

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