Device and method for adjusting the rotation radius of a PVD magnetron and the power of a planar target power supply

Abstract

The invention discloses a device for adjusting the rotation radius of a PVD magnetron and the power of a plane target, comprising: a magnetron rotation component, a controller and a driving mechanism, wherein the projection area of ​​the magnetron on a horizontal plane is smaller than the projection area of ​​the plane target on a horizontal plane, and the controller controls a second power component to drive the magnetron to move radially so that the thickness of the film is within a set thickness range, and controls the power applied to the plane target so that the resistivity of the film is within a set resistivity range. The invention can make the thickness of the film on the substrate tend to be consistent with the resistivity, and has a fast adjustment speed, which helps to improve efficiency.

Description

Technical Field

[0001] The invention relates to the technical field of coating equipment, and in particular to equipment and method for adjusting the rotation radius of a PVD magnetron and the power of a plane target power supply. Background Art

[0002] In the related technology, physical vapor deposition (PVD) technology refers to the technology of using physical methods under vacuum conditions to vaporize the surface of the material source (solid) into gaseous atoms or molecules, or partially ionize it into ions, and deposit a thin film with certain special functions on the surface of the substrate through a low-pressure gas (or plasma) process.

[0003] Among them, in the existing PVD coating equipment, the coating on the substrate often has problems of uneven resistivity and thickness, which makes it difficult for the coating on the substrate to meet the quality and yield requirements. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a device for adjusting the rotation radius of a PVD magnetron and the power of a planar target power supply, which can effectively solve the problem of uneven resistivity and thickness of a coating on a substrate.

[0005] The invention also provides a method for adjusting the rotation radius of the PVD magnetron and the power of the planar target power supply.

[0006] According to a first aspect of the present invention, a device for adjusting the rotation radius of a PVD magnetron and the power of a planar target power supply is provided for forming a thin film on a substrate. The device comprises:

[0007] A magnetron rotating assembly, comprising a magnetron, a magnetron support, a magnetron guide rail and a magnetron slider, wherein the magnetron is slidably connected to the magnetron support via the magnetron guide rail and the magnetron slider, wherein a projection area of ​​the magnetron on a horizontal plane is smaller than a projection area of ​​the planar target on the horizontal plane;

[0008] The driving mechanism comprises a first power component and a second power component, wherein the first power component is used to drive the magnetron support to rotate around a first axis so that the magnetron rotates along a circular trajectory, and the second power component is used to drive the magnetron to move radially relative to the magnetron support along the circular trajectory so as to adjust the rotation radius of the circular trajectory;

[0009] A controller is configured to perform at least one of the following controls:

[0010] Controlling the second power component to drive the magnetron to move radially so that the thickness of the film is within a set thickness range;

[0011] The power applied to the planar target is controlled so that the resistivity of the film is within a set resistivity range.

[0012] A device for adjusting the rotation radius of a PVD magnetron and the power of a planar target according to an embodiment of the present invention has at least the following beneficial effects:

[0013] The magnetron can be driven to move radially along a circular trajectory, and the rotation radius of the magnetron circle can be adjusted to make the thickness of the film on the substrate tend to be consistent. In addition, by controlling the power applied to the planar target, the resistivity of the film on the substrate can be made consistent, and the adjustment speed is fast, which helps to improve efficiency.

[0014] According to some embodiments of the present invention, the driving mechanism also includes a first connecting rod and a second connecting rod, wherein both ends of the first connecting rod are rotatably connected to the second connecting rod and the magnetron slider respectively, and the second connecting rod can rotate around a second axis, thereby driving the magnetron to move radially through the first connecting rod to adjust the rotation radius of the circular trajectory, wherein the first axis is arranged parallel to the second axis.

[0015] According to some embodiments of the present invention, the driving mechanism further comprises a first shaft and a second shaft, the first shaft being connected to the power output end of the first power component and the magnetron bracket respectively, and the second shaft being connected to the power output end of the second power component and the second connecting rod respectively;

[0016] Wherein, the first axis and the second axis are arranged as a coaxial structure, the first axis coincides with the second axis, the first power component can drive the first axis to rotate so that the magnetron rotates along the circular trajectory, and the second power component can drive the second axis to rotate so as to adjust the rotation radius of the magnetron.

[0017] According to some embodiments of the present invention, the driving mechanism further includes a first pin shaft, and the magnetron slider and the first connecting rod are rotatably connected via the first pin shaft.

[0018] According to some embodiments of the present invention, the driving mechanism further comprises a second pin shaft, and the first connecting rod and the second connecting rod are rotatably connected via the second pin shaft;

[0019] Wherein, the magnetron bracket has a first arc-shaped groove, one end of the second pin shaft protrudes from the surface of the first connecting rod and is located in the first arc-shaped groove, and the first arc-shaped groove can guide the second pin shaft.

[0020] According to some embodiments of the present invention, the device further comprises a counterweight rotating assembly, the counterweight rotating assembly comprising a counterweight block, a counterweight bracket, a counterweight guide rail and a counterweight slider, the counterweight block being slidably connected to the counterweight bracket via the counterweight guide rail and the counterweight slider;

[0021] The first power component is used to drive the counterweight bracket to rotate around the first axis so that the counterweight block rotates along the circumferential trajectory, and the second power component is used to drive the counterweight block to move radially relative to the counterweight bracket along the circumferential trajectory;

[0022] Wherein, the counterweight block and the magnetron move synchronously and in opposite directions, so that the counterweight block and the magnetron are symmetrically arranged.

[0023] According to some embodiments of the present invention, the driving mechanism further includes a first connecting rod and a second connecting rod, wherein two ends of the first connecting rod are rotatably connected to the second connecting rod and the magnetron slider, respectively, and the second connecting rod can rotate around a second axis, thereby driving the magnetron to move radially through the first connecting rod to adjust the rotation radius of the circular trajectory;

[0024] The driving mechanism also includes a third connecting rod and a fourth connecting rod, wherein both ends of the third connecting rod are rotatably connected to the fourth connecting rod and the counterweight slider respectively, and the fourth connecting rod is fixedly connected to the second connecting rod. The fourth connecting rod and the second connecting rod can rotate synchronously around the second axis, thereby driving the counterweight block to move radially through the third connecting rod to adjust the rotation radius of the circular trajectory.

[0025] According to some embodiments of the present invention, the device further comprises an adjustment component for adjusting the distance between the back plate of the planar target and the magnetron.

[0026] A method for adjusting a PVD magnetron rotation radius and a planar target power supply power according to a second aspect of the present invention is used to form a thin film on a substrate, comprising the steps of:

[0027] A magnetron and a planar target are provided, wherein a projection area of ​​the magnetron on a horizontal plane is smaller than a projection area of ​​the planar target on a horizontal plane, and the magnetron can rotate relative to the planar target around a first axis;

[0028] The rotation radius of the magnetron is adjusted, and / or the power applied to the planar target is adjusted so that the thickness and resistivity of the film are both within the corresponding set ranges.

[0029] A method for adjusting the rotation radius of a PVD magnetron and the power of a planar target power supply according to an embodiment of the present invention has at least the following beneficial effects:

[0030] The magnetron can be driven to move radially along a circular trajectory, and the rotation radius of the magnetron circle can be adjusted to make the thickness of the film on the substrate tend to be consistent. In addition, by controlling the power applied to the planar target, the resistivity of the film on the substrate can be made consistent, and the adjustment speed is fast, which helps to improve efficiency.

[0031] According to some embodiments of the present invention, the method further comprises the steps of:

[0032] Obtaining thickness distribution information and resistivity distribution information of the film;

[0033] The rotation radius of the magnetron is adjusted based on the thickness distribution information and the resistivity distribution information, and / or the power applied to the planar target is adjusted.

[0034] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0036] Figure 1 It is a schematic diagram of a PVD device in the prior art;

[0037] Figure 2 A schematic diagram of a device for adjusting the rotation radius of a PVD magnetron and the power of a planar target power supply according to some embodiments of the present invention;

[0038] Figure 3 A cross-sectional view of a device for adjusting the rotation radius of a PVD magnetron and the power of a planar target power supply according to some embodiments of the present invention;

[0039] Figure 4 A schematic diagram of a magnetron rotating assembly and a counterweight rotating assembly in a device for adjusting a PVD magnetron rotating radius and a planar target power supply power according to some embodiments of the present invention;

[0040] Figure 5 for Figure 4 A schematic diagram from another angle;

[0041] Figure 6 A schematic diagram of how a device for adjusting the rotation radius of a PVD magnetron and the power of a planar target power supply can improve the thickness and resistivity uniformity of a coating on a substrate according to some embodiments of the present invention;

[0042] Figure 7 The present invention is a flowchart of a method for adjusting the rotation radius of a PVD magnetron and the power of a planar target according to some embodiments of the present invention.

[0043] Reference numerals:

[0044] Magnetron sputtering device 20, magnetron 22, vacuum chamber 24, planar target 26, substrate stage 28, substrate 30, flow valve 32, plasma 34;

[0045] A device 40 for adjusting the rotation radius of a PVD magnetron and the power of a planar target power supply;

[0046] A magnetron and a counterweight rotating assembly 50, a first power component 52, a second power component 54, a third power component 56, a planar target 58, a magnetron 60, a first magnet 62, a second magnet 64, a yoke 66, a cooling water tank 68, a counterweight block 70, a magnetron rotating assembly 80, and a counterweight rotating assembly 90;

[0047] Magnetron slider 100, magnetron guide rail 102, magnetron bracket 104, first connecting rod 106, second connecting rod 108, first arc groove 110, first pin 112, first through hole 114, second pin 116, second through hole 118, counterweight slider 120, counterweight guide rail 122, counterweight bracket 124, third connecting rod 126, fourth connecting rod 128, second arc groove 130, third pin 132, third through hole 134, fourth pin 136, fourth through hole 138, skeleton oil seal 140, magnetic fluid sealing shaft 142, first shaft 144, fifth through hole 146, second shaft 148;

[0048] Substrate 200, magnetic flux lines 210, thin film resistivity distribution curve 220 obtained by prior art, middle position 230 of magnetron between central and peripheral positions, central position 240 of magnetron, peripheral position 250 of magnetron, and thin film resistivity distribution curve 260 optimized by the present invention. DETAILED DESCRIPTION

[0049] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0050] In the description of the present invention, it is necessary to understand that when it comes to orientation description, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0051] In the description of the present invention, if there is a description of first and second, it is only for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0052] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0053] In the description of the present invention, the description with reference to the term "some embodiments" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0054] In the related art, whether the thickness and resistivity of the coating on the substrate 200 are uniform will affect the yield of the final product after coating. Figure 1 A typical magnetron sputtering device 20 in the prior art is described, and the general principle of magnetron sputtering is explained. Figure 1 As shown, the magnetron sputtering device 20 includes a magnetron 22, a vacuum chamber 24, a planar target 26 and a substrate stage 28. The substrate stage 28 is used to carry a substrate 30 to be coated, and the front side of the planar target 26 faces the substrate stage 28. The magnetron 22 is arranged on the back side of the planar target 26 and can move relative to the planar target 26 under the drive of the driving device. During magnetron sputtering, the flow rate of argon or other gases entering the vacuum chamber is controlled by a flow valve 32. The magnetron 22 generates a magnetic field, and the power supply applies a negative voltage to the planar target 26 to generate an electric field. Under the action of the electric field, electrons move from the planar target 26 to the substrate 30 or the mask in the vacuum chamber 24. During the movement, they collide with argon atoms, causing them to be ionized to produce argon ions and new electrons. Under the action of the electric field, the argon ions are accelerated to fly toward the planar target 26, bombarding the target surface to cause the planar target 26 to sputter. The sputtered planar target atoms are deposited on the surface of the substrate 30 to form a thin film. The electrons generated during sputtering are used to form and maintain plasma 34 on the surface of the planar target 26, so that the above-mentioned argon ionization and bombardment process can be repeated to achieve continuous magnetron sputtering film deposition.

[0055] PVD magnetron sputtering means that Ar+ in the plasma controlled by the magnetron 22 on the surface of the planar target 26 bombards the planar target 26, sputtering out planar target atoms, and these sputtered planar target atoms are deposited on the substrate 30, or are ionized and then deposited on the substrate 30.

[0056] In the prior art, after the substrate 30 is coated, the thickness and resistance of different regions of the film may be uneven. Resistivity is generally related to the material, and resistivity is equal to the film thickness multiplied by the resistance. The existing method for dealing with uneven film thickness is usually to select a planar target 26 that is 1.5 times larger than the substrate size and a magnetron 22 that is 1.5 times larger than the substrate size. The magnetron 22 coats the entire substrate 30 to ensure that the thickness of the film is uniform. However, such a method usually requires a larger magnetron 22. In addition, for such a large-sized magnetron 22, only the resistivity can be adjusted as a whole and the resistance of each region can be adjusted by the film thickness. In addition, for resistivity, its value is related to many factors such as the distance between the substrate 30 and the planar target 26, the ventilation volume, etc. The prior art usually adopts methods such as adjusting the distance between the substrate 30 and the planar target 26, or adjusting the ventilation volume, etc. However, the above methods take a long time and can only change the resistivity of the film as a whole, which is not very helpful for the problem of uneven resistivity in various parts of the film. Therefore, how to keep the thickness and resistivity of the film uniform and achieve efficient production is a difficult problem in the industry.

[0057] Based on the above problems, refer to Figures 2 to 7 The present invention provides a magnetron sputtering device 40 and method for adjusting the rotation radius of a PVD magnetron 60 and the power supply power of a planar target 58. The magnetron sputtering device 40 for adjusting the rotation radius of a PVD magnetron 60 and the power supply power of a planar target 58 is referred to as the device 40 below, and the magnetron sputtering method for adjusting the rotation radius of a PVD magnetron 60 and the power supply power of a planar target 58 is referred to as the method below. In order to facilitate the distinction between substrates 200, the substrate mark 200 in the present application and the substrate mark 30 in the prior art.

[0058] The function of the device 40 is described below. The device 40 of the present invention can keep the thickness and resistivity of the film on the substrate 200 within the corresponding set range. The device 40 includes a magnetron rotating assembly 80, a driving mechanism, a controller and a planar target 58. Among them, the controller can control the driving mechanism to drive the magnetron rotating assembly 80 to move according to the thickness and resistivity of the film on the substrate 200. Specifically, the present invention uses a relatively small magnetron 30, specifically, the projection of the magnetron 60 on the horizontal plane is smaller than the projection of the planar target 58 on the horizontal plane. The magnetron can move relative to the planar target 58, and the controller can control the first power component 52 to drive the magnetron bracket 104 to rotate, so that the magnetron bracket 104 drives the magnetron 60 to rotate along a circular trajectory. Due to the small size of the magnetron 60, when the magnetron 60 rotates along the circular trajectory, it cooperates with the planar target 58 to form a circular (when the magnetron 60 is close to the center of the circle) or annular coating area. The controller can also control the second power component 54 to drive the magnetron 60 to move radially along the circular trajectory, thereby adjusting the rotation radius of the circular trajectory. It should be noted that when the magnetron 60 rotates along the circular trajectory, the portion of the substrate 200 directly below the circular or annular coating area can deposit more ions in the same time relative to other parts of the substrate 200, that is, the thickness increases faster. In this way, when the thickness of a certain area of ​​the thin film on the substrate 200 is low, the magnetron 60 can be driven to move radially, so that the magnetron 60 rotates above the area, so that the thickness of the area can increase faster, thereby improving the problem of uneven thickness.

[0059] In addition, the resistivity is also related to the power supply of the planar target 58. When the resistivity of a certain area of ​​the thin film on the substrate 200 is lower or higher than the standard value, the power supply of the planar target 58 can be controlled by the controller, and the magnetron 60 is moved radially to the area so that the resistivity of the area tends to the standard value. It should be noted that compared with adjusting the distance between the magnetron 60 and the planar target 58, or adjusting the ventilation volume, the time for adjusting the power supply will be significantly shorter than the adjustment time of the above two methods, thereby improving efficiency and achieving precise control.

[0060] It should be noted that there may be three situations for the thin film on the substrate 200: the first situation is that the thickness of at least some areas on the thin film is uneven, while the resistivity is generally uniform as a whole. In this case, the second power component 54 can be controlled by the controller to drive the magnetron 60 to move radially, so that the magnetron 60 is coated for a longer time in the area with lower thickness on the substrate 200, so that the thickness of each area tends to be consistent. The second situation is that the overall thickness of the thin film is generally uniform, while the resistivity of at least some areas is uneven. In this case, the power applied by the plane target 58 can be controlled by the controller, so that the resistivity of each area on the thin film tends to be consistent. The third situation is that both the thickness and resistivity of at least some areas on the thin film are uneven. In this case, on the one hand, it is necessary to control the magnetron 60 to coat the area with lower thickness on the substrate 200 for a longer time, and on the other hand, it is necessary to synchronously control the power of the plane target 58, so that the thickness and resistivity of the thin film are both within the corresponding range.

[0061] Please refer to Figure 2 , Figure 2 The overall structure of the device 40 is illustrated in FIG. 4 , wherein the device 40 includes a magnetron rotating assembly 80, a counterweight rotating assembly 90, and a driving mechanism. In some embodiments, the driving mechanism includes a first power component 52 and a second power component 54, wherein the first power component 52 is used to drive the magnetron support 104 to rotate around the first axis so that the magnetron 60 rotates along a circular trajectory, and the second power component 54 is used to drive the magnetron 60 to move radially along the circular trajectory relative to the magnetron support 104 to adjust the rotation radius of the circular trajectory. The driving mechanism also includes a third power component 56. The first power component 52 may be a first motor, the second power component 54 may be a second motor, the third power component 56 may be a third motor, and the first axis may be a vertical axis.

[0062] Please refer to Figure 3 , Figure 3is a cross-sectional view of the device 40. In some embodiments, the device 40 further includes an adjustment component, which is used to adjust the distance between the back plate of the planar target 58 and the magnetron 60. The third power component 56 can be used as a power source for the adjustment component, so as to cooperate with the adjustment component to adjust the distance between the magnetron rotating component 80 and the back plate of the planar target 58. Among them, the distance between the magnetron 60 and the planar target 58 is called the magnetic target distance. Further, the magnetron rotating component 80 can be raised or lowered by the third power component 56 and the lifting mechanism, so as to adjust the distance between the magnetron 60 and the planar target 58. The lifting mechanism can connect the entire magnetron rotating component 80, so that the third power component 56 drives the screw rod of the lifting mechanism to rise or fall. Among them, the cooling water trough 68 and the plane target 58 can also be set as a slot-type sliding connection, that is, the cooling water trough 68 is provided with a slot, and the plane target 58 can slide in the slot, so that the plane target 58 can move away from or approach the magnetron 60, and after the plane target 58 slides, the plane target 58 can be locked by fasteners such as screws to prevent the plane target 58 from sliding, but this method is more difficult because the plane target 58 is large in size and the area that needs to be sealed is also large.

[0063] Please continue to refer to Figure 3 In some embodiments, the magnetron 60 includes a first magnet 62, a second magnet 64, and a yoke 66. The magnetron 60 may have various shapes, such as a circular shape, an elliptical shape, etc. The first magnet 62 and the second magnet 64 have opposite magnetic properties.

[0064] Please continue to refer to Figure 3 , introduces the structure of the magnetron rotating assembly 80, in addition, can also refer to Figure 4 , Figure 4 A stereoscopic view of a magnetron rotating assembly 80 is shown. In some embodiments, the magnetron rotating assembly 80 includes a magnetron 60, a magnetron slider 100, a magnetron guide rail 102, and a magnetron support 104. The magnetron guide rail 102 may be a linear slider as shown in the figure, and the first power component 52 may drive the magnetron support 104 to rotate around the first axis so that the magnetron 60 rotates along a circular trajectory. When the magnetron 60 rotates along the circular trajectory, it forms a circular or annular coating area with the planar target 58.

[0065] Based on the above structure, the driving mechanism further includes a first connecting rod 106 and a second connecting rod 108. The two ends of the first connecting rod 106 are rotatably connected to the second connecting rod 108 and the magnetron slider 100 respectively. The second connecting rod 108 can rotate around the second axis, thereby driving the magnetron 60 to move radially through the first connecting rod 106 to adjust the rotation radius of the circular trajectory. The second axis can also be a vertical axis, that is, the first axis is arranged in parallel with the second axis.

[0066] More specifically, the driving mechanism further includes a first shaft 144 and a second shaft 148, wherein the first shaft 144 is respectively connected to the power output end of the first power component 52 and the magnetron bracket 104, and the second shaft 148 is respectively connected to the power output end of the second power component 54 and the second connecting rod 108. The first shaft 144 and the second shaft 148 are arranged as a coaxial structure, in which case the first axis coincides with the second axis, the first power component 52 can drive the first shaft 144 to rotate so that the magnetron 60 rotates along a circular trajectory, and the second power component 54 can drive the second shaft 148 to rotate so as to adjust the rotation radius of the magnetron 60.

[0067] Please continue to refer to Figure 3 In some embodiments, the device 40 further includes a cooling water tank 68, in which circulating cooling water is contained to cool the planar target 58. The storage cavity of the cooling water tank 68 needs to be sealed. Compared with the individual sealing of the second shaft 148 and the first shaft 144, the second shaft 148 in this embodiment adopts a coaxial design sleeved on the outer periphery of the first shaft 144, which makes the sealing easier and improves the sealing performance. In addition, the sealing performance of the cooling water tank 68 can also be improved by using a skeleton oil seal 140 and a magnetic fluid sealing shaft 142. Among them, the first shaft 144 has a fifth through hole 146, and the second shaft 148 is provided with the fifth through hole 146 to form a coaxial structure, thereby simplifying the structure of the device 40.

[0068] Please refer to Figure 4 , Figure 4 Schematic diagram of the magnetron and counterweight rotating assembly 50. The connection relationship of each component in the magnetron rotating assembly 80 is described in detail below. The magnetron slider 100 is slidably connected to the magnetron guide rail 102, so that the magnetron 60 can slide on the magnetron bracket 104 to adjust the radius of the circular track. The two ends of the first connecting rod 106 are respectively connected to the magnetron slider 100 and the second connecting rod 108, wherein the first pin shaft 112 passes through the first through hole 114 to connect the first connecting rod 106 and the magnetron slider 100, and the second pin shaft 116 passes through the second through hole 118 to connect the second connecting rod 108 and the first connecting rod 106.

[0069] When the second shaft 148 drives the second connecting rod 108 to rotate, the second connecting rod 108 drives the first connecting rod 106 to rotate, thereby forming a thrust or a pull on the magnetron slider 100. Since the magnetron slider 100 is constrained to slide only along the magnetron guide rail 102, the rotation of the second shaft 148 can be converted into a radial reciprocating movement of the magnetron slider 100 along a circular trajectory, thereby realizing the adjustment of the rotation radius. It should be noted that since the sliding of the magnetron 60 and the rotation of the magnetron 60 are driven by two independent power elements respectively, the rotation radius of the magnetron 60 can be synchronously adjusted during the process of the magnetron 60 scanning in the circumferential direction, without stopping the machine for adjustment, which is conducive to production efficiency.

[0070] In addition, in some embodiments, the magnetron bracket 104 has a first arc-shaped groove 110, one end of the second pin shaft 116 protrudes from the surface of the first connecting rod 106 and is located in the first arc-shaped groove 110, and the first arc-shaped groove 110 can guide the second pin shaft 116 so that the second pin shaft 116 slides along the groove wall of the first arc-shaped groove 110, thereby ensuring that the first connecting rod 106 moves according to the set trajectory.

[0071] Please continue to refer to Figure 3 and Figure 4 In order to improve the vibration problem caused by the center of gravity deviating from the rotation axis when the magnetron 60 rotates at high speed, in some embodiments, the device 40 also includes a counterweight rotating assembly 90, which is used to effectively reduce the vibration of the magnetron 60 when it rotates. Specifically, the counterweight rotating assembly 90 includes a counterweight block 70, a counterweight slider 120, a counterweight guide rail 122 and a counterweight bracket 124, and the counterweight block 70 is slidably connected to the counterweight bracket 124 through the counterweight guide rail 122 and the counterweight slider 120. The first power component 52 is used to drive the counterweight bracket 124 to rotate around the first axis so that the counterweight block 70 rotates along a circular trajectory, and the second power component 54 is used to drive the counterweight block 70 to move radially relative to the counterweight bracket 124 along the circumferential trajectory. Among them, the counterweight block 70 moves synchronously with the magnetron 60, and the moving directions are opposite, so that the counterweight block 70 and the magnetron 60 are symmetrically arranged, that is, the circular trajectory of the counterweight block 70 when rotating is the same as the circular trajectory of the magnetron 60 when rotating, thereby reducing the vibration of the magnetron 60.

[0072] Please refer to Figure 4 and Figure 5 , the connection relationship between the various components of the counterweight rotating assembly 90 is described below. Among them, the two ends of the third connecting rod 126 are respectively connected to the counterweight slider 120 and the fourth connecting rod 128, the third pin shaft 132 passes through the third through hole 134 so that the third connecting rod 126 and the counterweight slider 120 are connected, and the fourth pin shaft 136 passes through the fourth through hole 138 so that the fourth connecting rod 128 and the third connecting rod 126 are connected. The driving method of the counterweight slider 120 can be understood by referring to the driving method of the magnetron slider 100, and will not be described in detail here.

[0073] In some embodiments, the fourth connecting rod 128 and the second connecting rod 108 can be connected as an integral structure to form an integral connecting rod. In other embodiments, the fourth connecting rod 128 and the second connecting rod 108 can be split structures and fixedly connected by other connecting components. In either case, when the second power component 54 drives the second shaft 148 to rotate, the fourth connecting rod 128 and the second connecting rod 108 can rotate synchronously, so that the radial movement distance of the counterweight block 70 is consistent with the radial movement distance of the magnetron 60.

[0074] Similarly, the magnetron bracket 104 and the counterweight bracket 124 can be connected as an integral structure to form an integral bracket. The magnetron bracket 104 and the counterweight bracket 124 can be split structures and fixedly connected by other connecting components. In either case, when the first power component 52 drives the first shaft 144 to rotate, the magnetron bracket 104 and the counterweight bracket 124 can rotate synchronously.

[0075] In addition, in some embodiments, the counterweight bracket 124 has a second arc groove 130, one end of the fourth pin shaft 136 protrudes from the surface of the third connecting rod 126 and is located in the second arc groove 130, and the second arc groove 130 can guide the fourth pin shaft 136 so that the fourth pin shaft 136 slides along the groove wall of the second arc groove 130, thereby ensuring that the third connecting rod 126 moves according to the set trajectory.

[0076] Please refer to Figure 6 , showing a schematic diagram of the radial movement of the magnetron 60 along a circular trajectory to adjust the rotation radius. Taking the figure as an example, the magnetron 60 can switch between three positions, namely, an intermediate position 230 between the central and peripheral positions, a magnetron central position 240, and a magnetron peripheral position 250 (it should be noted that since the movement trajectory of the magnetron 60 is circular, the intermediate position 230, the central position 240, and the peripheral position 250 can also be understood as the center, the inner ring, and the outer ring. The magnetron 60 marked with a solid line in the figure refers to the magnetron 60 located in the inner ring and moving to the left side of the figure, and the magnetron 60 marked with a dotted line in the figure refers to the magnetron 60 located in the central position 240 and is already located in the outer ring and moving to the right side of the figure), and adjusts the working time at different positions, so that the coating speed of different areas of the substrate 200 can be adjusted to make the thickness of the coating in each area tend to be consistent.

[0077] also, Figure 6 The resistivity distribution on the film is also shown. In the illustrated embodiment, the resistivity of the film shows a trend of gradually decreasing from the center to both sides (the curve represented by the dotted line). The overall distribution of the resistivity of the film is uneven. At this time, this problem can be improved by adjusting the power supply. Specifically, the relationship between the power supply and the resistivity can be obtained in advance, and then when the magnetron 60 moves to different positions of the rotation radius, the power supply applied to the planar target 58 is adaptively adjusted to make the resistivity of the film tend to be consistent. Taking the figure as an example, it is assumed that for this type of film material, the higher the power supply, the lower the resistivity. Therefore, when the magnetron 60 is switched to the central position 240, the power supply applied to the planar target 58 is the highest. When the magnetron 60 is switched to the middle position 230 and the peripheral position 250 in turn, the power supply applied to the planar target 58 gradually decreases, so that the resistivity can be distributed relatively evenly (the curve represented by the solid line).

[0078] It should be noted that if the resistivity of a certain area on the film is too high or too low, but the thickness is within the normal range, the working time of the magnetron 60 in this area can be shortened while adjusting the resistivity of the area to prevent the thickness of the area from growing too fast and exceeding the normal range.

[0079] In addition to the above-described device 40 for adjusting the rotation radius of the PVD magnetron 60 and the power supply power of the planar target 58, the present invention also provides a method for adjusting the rotation radius of the PVD magnetron 60 and the power supply power of the planar target 58. In some embodiments, a method for adjusting the rotation radius of the PVD magnetron 60 and the power supply power of the planar target 58 includes the steps of:

[0080] A magnetron 60 and a planar target 58 are provided, wherein a projection area of ​​the magnetron 60 on a horizontal plane is smaller than a projection area of ​​the planar target 58 on a horizontal plane, and the magnetron 60 can rotate relative to the planar target 58 around a first axis;

[0081] The rotation radius of the magnetron 60 and / or the power applied to the planar target 58 are adjusted so that the thickness and resistivity of the film are within the corresponding set ranges.

[0082] Specifically, by changing the rotation radius of the magnetron 60, the deposition speed of different parts of the substrate 200 can be adjusted, and then the film thickness can be adjusted. By changing the power of the target power supply and coordinating the switching of the magnetron 60 at different positions, the resistivity of different parts of the film can be adjusted, so that the film thickness and resistivity uniformity can meet the requirements.

[0083] For further information, please refer to Figure 7 In some embodiments, the method steps include:

[0084] S300, obtaining the film thickness and resistivity uniformity given by the prior art;

[0085] S302, adjusting and optimizing the rotation radius of the magnetron 60 and the corresponding power supply power of the planar target 58;

[0086] S304, film thickness and resistivity uniformity meet the requirements.

[0087] Specifically, for example, when the thickness of the middle region of the film is too large, the rotation radius of the magnetron 60 can be increased so that other regions of the film can be deposited faster than the middle region, thereby reducing or eliminating the thickness difference between different regions.

[0088] For example, when the resistivity of the middle region of the film exceeds the normal range, the magnetron 60 can be moved to the region and the power of the planar target 58 can be adjusted to reduce or eliminate the resistivity difference between different regions.

[0089] It is described above that the thickness and resistivity of the film can be adjusted uniformly by moving the rotation radius of the magnetron 60 and changing the power supply of the planar target 58. In addition, in some embodiments, before changing the rotation radius of the magnetron 60, the method proposed by the present invention further includes the following steps: identifying the thickness and resistivity of different parts of the film, obtaining the distribution information of the film thickness and the distribution information of the resistivity, and based on the distribution information of the thickness and the resistivity, adaptive adjustment can be performed in combination with the above-mentioned scheme.

[0090] The method and steps for identifying the thickness and resistivity of different parts of the film include: first preparing samples according to the normal production process, analyzing the coating thickness and resistivity of the samples to establish a database. Specifically, for thickness, the sample can be cut to form a cross section, and then the thickness at different positions on the cross section can be measured with the help of a microscope or other equipment. For resistivity, the resistance of each part of the sample can be detected by a resistance detection device, and the resistivity of each part can be obtained by multiplying the resistance by the thickness.

[0091] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. A device for adjusting the rotation radius of a PVD magnetron and the power of a planar target, used for forming a thin film on a substrate, characterized in that: include: A magnetron rotating assembly, comprising a magnetron, a magnetron support, a magnetron guide rail and a magnetron slider, wherein the magnetron is slidably connected to the magnetron support via the magnetron guide rail and the magnetron slider, wherein a projection area of ​​the magnetron on a horizontal plane is smaller than a projection area of ​​the planar target on the horizontal plane; The driving mechanism comprises a first power component and a second power component, wherein the first power component is used to drive the magnetron support to rotate around a first axis so that the magnetron rotates along a circular trajectory, and the second power component is used to drive the magnetron to move radially relative to the magnetron support along the circular trajectory so as to adjust the rotation radius of the circular trajectory; The controller is configured to perform the following control: Controlling the second power component to drive the magnetron to move radially so that the thickness of the film is within a set thickness range; Controlling the power of the power source applied to the planar target so that the resistivity of the film is within a set resistivity range; When the film thickness is uneven and the resistivity is uniform, the controller controls the second power component to drive the magnetron to move radially, so that the magnetron coats the film in the area with lower thickness on the substrate for a longer time, so that the thickness of each area tends to be consistent; When the overall thickness of the film is uniform and the resistivity of at least some regions is non-uniform, the controller controls the power applied by the planar target so that the resistivity of each region on the film tends to be consistent; When the thickness and resistivity of at least part of the film are uneven, the controller controls the magnetron to coat the area with lower thickness on the substrate for a longer time, and the controller synchronously controls the power supply of the planar target to ensure that the thickness and resistivity of the film are within the corresponding range.

2. The device according to claim 1, characterized in that The driving mechanism also includes a first connecting rod and a second connecting rod, wherein the two ends of the first connecting rod are rotatably connected to the second connecting rod and the magnetron slider respectively, and the second connecting rod can rotate around a second axis, thereby driving the magnetron to move radially through the first connecting rod to adjust the rotation radius of the circular trajectory, wherein the first axis is arranged parallel to the second axis.

3. The device according to claim 2, characterized in that The driving mechanism further comprises a first shaft and a second shaft, wherein the first shaft is respectively connected to the power output end of the first power component and the magnetron bracket, and the second shaft is respectively connected to the power output end of the second power component and the second connecting rod; Wherein, the first axis and the second axis are arranged as a coaxial structure, the first axis coincides with the second axis, the first power component can drive the first axis to rotate so that the magnetron rotates along the circular trajectory, and the second power component can drive the second axis to rotate so as to adjust the rotation radius of the magnetron.

4. The device according to claim 2, characterized in that The driving mechanism further comprises a first pin shaft, and the magnetron slider and the first connecting rod are rotatably connected via the first pin shaft.

5. The device according to claim 2, characterized in that The driving mechanism further includes a second pin shaft, and the first connecting rod and the second connecting rod are rotatably connected via the second pin shaft; Wherein, the magnetron bracket has a first arc-shaped groove, one end of the second pin shaft protrudes from the surface of the first connecting rod and is located in the first arc-shaped groove, and the first arc-shaped groove can guide the second pin shaft.

6. The device according to claim 1, characterized in that The device also includes a counterweight rotating assembly, which includes a counterweight block, a counterweight bracket, a counterweight guide rail, and a counterweight slider, wherein the counterweight block is slidably connected to the counterweight bracket via the counterweight guide rail and the counterweight slider; The first power component is used to drive the counterweight bracket to rotate around the first axis so that the counterweight block rotates along the circumferential trajectory, and the second power component is used to drive the counterweight block to move radially relative to the counterweight bracket along the circumferential trajectory; Wherein, the counterweight block and the magnetron move synchronously and in opposite directions, so that the counterweight block and the magnetron are symmetrically arranged.

7. The device according to claim 6, characterized in that The driving mechanism further includes a first connecting rod and a second connecting rod, wherein two ends of the first connecting rod are rotatably connected to the second connecting rod and the magnetron slider respectively, and the second connecting rod can rotate around a second axis, thereby driving the magnetron to move radially through the first connecting rod to adjust the rotation radius of the circular trajectory; The driving mechanism also includes a third connecting rod and a fourth connecting rod. Both ends of the third connecting rod are rotatably connected to the fourth connecting rod and the counterweight slider respectively. The fourth connecting rod and the second connecting rod can rotate synchronously around the second axis, thereby driving the counterweight block to move radially through the third connecting rod to adjust the rotation radius of the circular trajectory.

8. The device according to claim 1, characterized in that The device further comprises an adjusting component, which is used for adjusting the distance between the back plate of the planar target and the magnetron.

9. A method for adjusting the rotation radius of a PVD magnetron and the power of a planar target for forming a thin film on a substrate, characterized in that: Includes steps: A magnetron and a planar target are provided, wherein a projection area of ​​the magnetron on a horizontal plane is smaller than a projection area of ​​the planar target on a horizontal plane, and the magnetron can rotate relative to the planar target around a first axis; adjusting the rotation radius of the magnetron and the power applied to the planar target so that the thickness and resistivity of the film are within corresponding set ranges; When the film thickness is uneven and the resistivity is uniform, the controller controls the second power component to drive the magnetron to move radially, so that the magnetron coats the film in the area with lower thickness on the substrate for a longer time, so that the thickness of each area tends to be consistent; When the overall thickness of the film is uniform and the resistivity of at least some regions is non-uniform, the controller controls the power applied by the planar target so that the resistivity of each region on the film tends to be consistent; When the thickness and resistivity of at least part of the film are uneven, the controller controls the magnetron to coat the area with lower thickness on the substrate for a longer time, and the controller synchronously controls the power supply of the planar target to ensure that the thickness and resistivity of the film are within the corresponding range.

10. The method according to claim 9, characterized in that The method further comprises the steps of: Obtaining thickness distribution information and resistivity distribution information of the film; The rotation radius of the magnetron is adjusted based on the thickness distribution information and the resistivity distribution information, and / or the power applied to the planar target is adjusted.

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