Method and device for constructing radio frequency front-end module, and radio frequency front-end module

Abstract

The embodiment of the present application provides a method and device for constructing a radio frequency front-end module, and a radio frequency front-end module, wherein the method includes: constructing an initial radio frequency front-end module including an initial signal processor and a target radio frequency switch, wherein the initial signal processor maintains a target impedance over the entire frequency band, the initial signal processor is used to process radio frequency signals, and the target radio frequency switch is used to control the on-off of radio frequency signals between the initial signal processor and the radio frequency antenna; determining the parameters of the device to be adjusted in the initial signal processor; adjusting the parameters of the device to be adjusted to obtain a target radio frequency front-end module including a target signal processor and a target radio frequency switch. Through the present application, the problem of the large volume of the radio frequency front-end module is solved, thereby achieving the effect of reducing the volume of the radio frequency front-end module.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of radio frequency front-end modules, and specifically, to a method and device for constructing a radio frequency front-end module, and a radio frequency front-end module. Background Art

[0002] With the advancement and development of communication technology, RF front-end modules have become core components in communication systems. The RF switch in the RF front-end module is used to control the on and off of multi-band RF signals. The circuit performance of the RF switch will directly affect the performance of the transceiver system in the entire RF front-end module.

[0003] In the prior art, the design of the RF front-end module is to design the RF switch and the signal processor such as the filter separately. The RF switch adopts the SOI (Silicon-On-Insulator, i.e. silicon on an insulating substrate) CMOS (Complementary Metal Oxide Semiconductor) process. Due to the development trend of high integration, multi-band, and multi-network standards of wireless terminals, more RF switches need to be added, which makes more branches in the circuit disconnected, resulting in a larger parasitic capacitance in the circuit, thereby affecting the transmission quality of the RF signal in the RF front-end module. The traditional RF front-end module adopts the method of adding a matching circuit between the signal processor such as the filter and the RF switch to reduce the return loss of the circuit, improve the signal strength of the received or transmitted signal, and solve the impedance mismatch problem between the RF switch and the filter. However, the addition of the matching circuit not only increases the volume of the RF front-end module, but also increases the design difficulty, design cycle, and cost of the RF front-end module.

[0004] In view of the problems in related technologies, such as the large size of the RF front-end module, no effective solution has been proposed yet. Summary of the invention

[0005] The embodiments of the present application provide a method and device for constructing a radio frequency front-end module, and a radio frequency front-end module, so as to at least solve the problem of large volume of the radio frequency front-end module in the related art.

[0006] According to an embodiment of the present application, a method for constructing a radio frequency front-end module is provided, comprising:

[0007] Constructing an initial RF front-end module including an initial signal processor and a target RF switch, wherein the initial signal processor maintains a target impedance over the entire frequency band, the initial signal processor is used to process the RF signal, and the target RF switch is used to control the on / off of the RF signal between the initial signal processor and the RF antenna;

[0008] Determining a device parameter to be adjusted in the initial signal processor, wherein the device parameter to be adjusted is a device parameter allowed to be adjusted on a device included in the initial signal processor;

[0009] The parameters of the device to be adjusted are adjusted to obtain a target RF front-end module including a target signal processor and the target RF switch, wherein the target RF front-end module maintains the target impedance over the entire frequency band.

[0010] In an exemplary embodiment, the construction of an initial RF front-end module including an initial signal processor and a target RF switch includes:

[0011] Constructing a switch MOS tube model as the target RF switch;

[0012] Converting the switch MOS tube model into a target RC lumped element circuit, wherein the target RC lumped element circuit is an equivalent circuit of the switch MOS tube model constructed using RC lumped elements;

[0013] A connection is established between the initial signal processor and the target RC lumped element circuit to obtain the initial RF front-end module.

[0014] In an exemplary embodiment, converting the switch MOS tube model into a target RC lumped element circuit includes:

[0015] According to the S parameters of the switch MOS tube model, parasitic parameters are extracted from the equivalent circuit models of the on branch and the off branch of the switch MOS tube model to obtain target parasitic parameters, wherein the S parameters are used to indicate the frequency domain characteristics of the switch MOS tube model;

[0016] The switch MOS tube model is equivalently treated using RC lumped elements according to the target parasitic parameters to obtain the target RC lumped element circuit.

[0017] In an exemplary embodiment, determining the device parameters to be adjusted in the initial signal processor includes:

[0018] Acquiring all device parameters in the initial signal processor;

[0019] Device parameters that meet target conditions are screened out from all the devices as the device parameters to be adjusted, wherein the target conditions include: being adjustable and having no influence on the signal processing performance of the initial signal processor.

[0020] In an exemplary embodiment, the adjusting the parameters of the device to be adjusted to obtain a target RF front-end module including a target signal processor and the target RF switch includes:

[0021] Obtaining the initial impedance of the initial RF front-end module;

[0022] The parameters of the device to be adjusted are adjusted according to the initial impedance and the target impedance to obtain a target RF front-end module including a target signal processor and the target RF switch.

[0023] In an exemplary embodiment, adjusting the parameter of the device to be adjusted according to the initial impedance and the target impedance includes:

[0024] Determine the initial impedance as an initial state, the target impedance as a target state, and the device parameter to be adjusted as an optimization variable;

[0025] The optimization variables are adjusted to optimize the initial RF front-end module from the initial state to the target state to obtain the optimized target signal processor.

[0026] According to another embodiment of the present application, a radio frequency front-end module is provided, including: a target signal processor and the target radio frequency switch, wherein:

[0027] The target signal processor is connected to the target RF switch, the target signal processor is used to process the RF signal, the target RF switch is used to control the on / off of the RF signal between the target signal processor and the RF antenna, and the target RF front-end module including the target signal processor and the target RF switch maintains the target impedance over the entire frequency band;

[0028] The target signal processor is obtained by constructing an initial RF front-end module including an initial signal processor and the target RF switch, wherein the initial signal processor maintains the target impedance over the entire frequency band; determining the device parameters to be adjusted in the initial signal processor, wherein the device parameters to be adjusted are device parameters that are allowed to be adjusted on the devices included in the initial signal processor; and adjusting the device parameters to be adjusted.

[0029] According to another embodiment of the present application, a device for constructing a radio frequency front-end module is provided, including:

[0030] A construction module, used to construct an initial RF front-end module including an initial signal processor and a target RF switch, wherein the initial signal processor maintains a target impedance over the entire frequency band, the initial signal processor is used to perform signal processing on the RF signal, and the target RF switch is used to control the on / off of the RF signal between the initial signal processor and the RF antenna;

[0031] A determination module, used for determining a device parameter to be adjusted in the initial signal processor, wherein the device parameter to be adjusted is a device parameter allowed to be adjusted on the device included in the initial signal processor;

[0032] The adjustment module is used to adjust the parameters of the device to be adjusted to obtain a target RF front-end module including a target signal processor and the target RF switch, wherein the target RF front-end module maintains the target impedance over the entire frequency band.

[0033] According to another embodiment of the present application, a computer-readable storage medium is provided, in which a computer program is stored, wherein the computer program is configured to execute the steps of any of the above method embodiments when run.

[0034] According to another embodiment of the present application, an electronic device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the steps in any one of the above method embodiments.

[0035] Through this application, first, an initial RF front-end module including an initial signal processor that maintains a target impedance over the entire frequency band and a target RF switch for controlling the on / off of the RF signal between the initial signal processor and the RF antenna is constructed, and the initial signal processor is used to perform signal processing on the RF signal; then determine the device parameters to be adjusted on the device included in the initial signal processor that allow the device parameters to be adjusted; by adjusting the device parameters to be adjusted, a target RF front-end module including a target signal processor and a target RF switch and maintaining the target impedance over the entire frequency band is obtained. That is, by adjusting the device parameters to be adjusted in the initial signal processor that has maintained the target impedance, the parasitic capacitance generated by the target RF switch is eliminated. The influence of the equivalent impedance of the entire RF front-end module, so that the target RF switch and the initial signal processor (i.e., the target signal processor) that has adjusted the device parameters to be adjusted can still maintain the target impedance over the entire frequency band to obtain the target RF front-end module without adding a matching circuit, thereby reducing the number of devices in the circuit. Therefore, the problem of the large volume of the RF front-end module can be solved, and the volume effect of the RF front-end module can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 It is a hardware structure block diagram of a mobile terminal of a method for constructing a radio frequency front-end module according to an embodiment of the present application;

[0037] Figure 2 is a flowchart of a method for constructing a radio frequency front-end module according to an embodiment of the present application;

[0038] Figure 3is a schematic diagram of a switch MOS tube model according to an embodiment of the present application;

[0039] Figure 4 is a schematic diagram of an equivalent circuit of a switch MOS tube model according to an embodiment of the present application;

[0040] Figure 5 is a schematic diagram of a target RC lumped element circuit simulation according to an embodiment of the present application;

[0041] Figure 6 is a schematic diagram of a switch equivalent circuit of a target radio frequency switch in a radio frequency front-end module according to an embodiment of the present application;

[0042] Figure 7 is a flowchart of a construction process of a radio frequency front-end module according to an embodiment of the present application;

[0043] Figure 8 is a schematic diagram of S parameters obtained by simulating an initial signal processor according to an embodiment of the present application;

[0044] Fig. 9 is a schematic diagram of a target RF front-end module simulation according to an embodiment of the present application;

[0045] Fig.10 is a schematic diagram of a target signal processor simulation according to an embodiment of the present application;

[0046] Fig.11 is a schematic diagram of a radio frequency front-end module according to an embodiment of the present application;

[0047] Fig.12 It is a structural block diagram of a construction device of a radio frequency front-end module according to an embodiment of the present application. DETAILED DESCRIPTION

[0048] The embodiments of the present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0049] It should be noted that the terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

[0050] The method embodiments provided in the embodiments of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device. Taking running on a mobile terminal as an example, Figure 1 FIG. 1 is a hardware structure block diagram of a mobile terminal of a method for constructing a radio frequency front-end module according to an embodiment of the present application. Figure 1 As shown, the mobile terminal may include one or more ( Figure 1Only one is shown in the figure) a processor 102 (the processor 102 may include but is not limited to a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data, wherein the mobile terminal may also include a transmission device 106 and an input / output device 108 for communication functions. It can be understood by those skilled in the art that Figure 1 The structure shown is only for illustration and does not limit the structure of the mobile terminal. Figure 1 More or fewer components as shown, or with Figure 1 Different configurations are shown.

[0051] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the construction method of the RF front-end module in the embodiment of the present application. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, to implement the above method. The memory 104 may include a high-speed random access memory, and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some instances, the memory 104 may further include a memory remotely arranged relative to the processor 102, and these remote memories can be connected to the mobile terminal via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0052] The transmission device 106 is used to receive or send data via a network. The specific example of the above network may include a wireless network provided by a communication provider of the mobile terminal. In one example, the transmission device 106 includes a network adapter (Network Interface Controller, referred to as NIC), which can be connected to other network devices through a base station so as to communicate with the Internet. In one example, the transmission device 106 can be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0053] In this embodiment, a method for constructing a radio frequency front-end module running on the above mobile terminal is provided. Figure 2 is a flowchart of a method for constructing a radio frequency front-end module according to an embodiment of the present application, such as Figure 2 As shown, the process includes the following steps:

[0054] Step S202, constructing an initial RF front-end module including an initial signal processor and a target RF switch, wherein the initial signal processor maintains a target impedance over the entire frequency band, the initial signal processor is used to perform signal processing on the RF signal, and the target RF switch is used to control the on / off of the RF signal between the initial signal processor and the RF antenna;

[0055] Step S204, determining a device parameter to be adjusted in the initial signal processor, wherein the device parameter to be adjusted is a device parameter allowed to be adjusted on the device included in the initial signal processor;

[0056] Step S206, adjusting the parameters of the device to be adjusted to obtain a target RF front-end module including a target signal processor and the target RF switch, wherein the target RF front-end module maintains the target impedance over the entire frequency band.

[0057] Through the above steps, an initial RF front-end module including an initial signal processor that maintains the target impedance over the entire frequency band and a target RF switch for controlling the on / off of the RF signal between the initial signal processor and the RF antenna is constructed, and the initial signal processor is used to perform signal processing on the RF signal; then determine the device parameters to be adjusted on the device included in the initial signal processor that allow the device parameters to be adjusted; by adjusting the device parameters to be adjusted, a target RF front-end module including a target signal processor and a target RF switch and maintaining the target impedance over the entire frequency band is obtained. In other words, by adjusting the device parameters to be adjusted in the initial signal processor that has maintained the target impedance, the influence of the parasitic capacitance generated by the target RF switch on the equivalent impedance of the entire RF front-end module is eliminated, so that the target RF switch and the initial signal processor (i.e., the target signal processor) that has adjusted the device parameters to be adjusted can still maintain the target impedance over the entire frequency band to obtain the target RF front-end module without adding a matching circuit, thereby reducing the number of devices in the circuit. Therefore, the problem of the large volume of the RF front-end module can be solved, and the volume effect of the RF front-end module can be reduced.

[0058] Optionally, in this embodiment, the above-mentioned method for constructing the RF front-end module can be but is not limited to being applied to plug-ins, software, applications, etc. with the function of constructing the RF front-end module.

[0059] Optionally, in this embodiment, the RF front-end module may be used, but not limited to, to amplify, filter and select the acquired RF signal, thereby improving the quality of receiving and transmitting RF signals in the communication system. The RF front-end module may be, but not limited to, two or more of the circuit devices including RF switches, filters, duplexers, low noise amplifiers or power amplifiers.

[0060] In the technical solution provided in the above step S202, the above initial signal processor may include, but is not limited to, one or more of the circuit devices such as filters, duplexers, low noise amplifiers or power amplifiers. Taking the initial signal processor as a filter as an example, the initial signal processor is used to filter the radio frequency signal, for example, it may be, but is not limited to, an IPD filter (Integrated Passive Devices), a SAW filter (Surface Acoustic Wave), a BAW filter (Bulk Acoustic Wave), a FBAR filter (Film Bulk Acoustic Resonator), and the like.

[0061] Optionally, in this embodiment, the target RF switch may be, but is not limited to, a component for controlling the on or off of a circuit, such as a single-pole double-throw RF switch, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and the like.

[0062] Optionally, in this embodiment, taking the target RF switch in the above-mentioned initial RF front-end module as a MOSFET tube and the initial signal processor as a filter as an example, when the target RF switch is turned off, due to the parasitic capacitance between the gate, drain and source of the MOSFET tube, the MOSFET tube can be equivalent to a turn-off capacitor, and due to the parasitic capacitance and parasitic resistance between the MOSFET tube and the metal interconnection line, when the RF signal is high frequency, the RF signal can be coupled from the input end of the filter (initial signal processor) in the initial RF front-end module to the output end through the parasitic capacitance between the MOSFET tube and the metal interconnection line, thereby causing the impedance of each filter in the initial RF front-end module to deviate from the standard impedance, affecting the transmission quality of the RF signal. By adjusting the device parameters in the filter, the overall impedance of the target RF front-end module obtained in the end is maintained at the target impedance without changing the filtering function of the filter.

[0063] Optionally, in this embodiment, the initial signal processor and the initial RF front-end module may be constructed in simulation design software, but is not limited to it, such as ADS (Advanced Design System) software.

[0064] In an exemplary embodiment, an initial RF front-end module including an initial signal processor and a target RF switch can be constructed in the following manner but is not limited to: constructing a switch MOS tube model as the target RF switch; converting the switch MOS tube model into a target RC lumped element circuit, wherein the target RC lumped element circuit is an equivalent circuit of the switch MOS tube model constructed using RC lumped elements; establishing a connection between the initial signal processor and the target RC lumped element circuit to obtain the initial RF front-end module.

[0065] Optionally, in this embodiment, the above-mentioned switch MOS tube model may be but is not limited to a circuit including multiple series or parallel branches connected by multiple switches (which may be but is not limited to: single-pole double-throw RF switches, MOSFET tubes, etc.), and the series branch in the switch MOS tube model is used to transmit the RF signal when the branch is turned on, and the parallel branch in the switch MOS tube model is used to prevent the leakage of the RF signal when the branch is turned off.

[0066] Optionally, in this embodiment, the target RC lumped element circuit can be obtained by, but is not limited to, equating a switch circuit in an on state and a switch circuit in an off state in the switch MOS tube model to a circuit in which an on resistance and an off capacitance are connected.

[0067] Optionally, in this embodiment, the switch MOS tube model can be constructed in the circuit design software (virtuoso software) but is not limited to, for example: the schematic diagram and layout of the switch MOS tube circuit structure without adding the matching circuit can be established in the virtuoso software but is not limited to, and the layout is simulated to determine the switch circuit structure and layout at this time. According to the S parameters of the switch layout, the parasitic parameters of the equivalent circuit model of the on branch and the off branch of the switch MOS tube model are extracted, and the switch MOS tube model is equivalent to the RC lumped element network to obtain the target RC lumped element circuit. The designed filter and the equivalent circuit model of the switch MOS tube model (i.e., the target RC lumped element circuit) are simulated together in the simulation software ADS to obtain the initial RF front-end module.

[0068] In an optional implementation, an example of a switch MOS tube model is provided. Figure 3 is a schematic diagram of a switch MOS tube model according to an embodiment of the present application, such as Figure 3 As shown, taking the target RF switch as a single-pole double-throw RF switch as an example, the single-pole double-throw RF switch may include but is not limited to multiple channels, and each channel may include but is not limited to series branches and parallel branches.

[0069] For the L1 channel, it can be but not limited to controlling the gate potential V of the transistor derived from the series branch (i.e. the above series branch) and the parallel branch (i.e. the above parallel branch) in the L1 channel. G_Serics and body electrode potential V B_Serics , controls the opening or closing of transistors in a single series branch and a parallel branch, thereby controlling the opening or closing of the entire RF channel and controlling the coordinated transmission and reception of the front-end RF signals.

[0070] When a channel is in the on state, the gate potential V in the series branch of the channel in the on state can be controlled by, but is not limited to, G_Serics Apply positive voltage while controlling the body electrode potential V B_Serics is zero, making the series unit in the channel in the open state in the on state. At the same time, the gate potential V G_Shunt and body electrode potential V B_Shunt , the parallel unit can be in a closed state by applying a negative bias voltage, but is not limited to. For other channels that should be closed, an opposite control signal can be applied, but is not limited to, so that the RF signal (i.e., radio frequency signal) is output to the corresponding transmission port through this path.

[0071] In general, since the operating voltage and breakdown voltage of a single MOS device are relatively low, far from meeting the linearity index requirements, it is possible but not limited to stacking multiple transistors to ensure that the circuit can withstand high-power signals, and it is possible but not limited to connecting resistors R across the source and drain ends of the stacked MOS tubes. DS , through R DS Provide a DC potential for the source and drain ends of each MOS tube.

[0072] In the series-parallel structure of the RF switch, R DS It can be used, but is not limited to, to stabilize the source and drain DC potential of the MOS tube at 0V, and R DS A DC potential is provided for the source and drain ends of each MOS tube, and resistors with the same resistance are connected across the source and drain ends of the stacked MOS tubes, which is beneficial to the average distribution of the source and drain voltage of each MOS tube in the off-branch and improves the linearity of the RF switch.

[0073] For the resistor R G , resistor R G It can be used, but is not limited to, to provide a bias voltage to the gate and provide isolation for the bias circuit (gate resistor R G It can be used, but not limited to, to isolate the DC bias voltage from the RF signal and reduce the leakage of the RF signal, and connect a large gate bias resistor R in series with the conducting branch. G It can make the periodic RF input signal almost fall on the resistor R GThis reduces the dependence of the channel resistance on the input signal and improves the linearity of the RF switch.

[0074] For the body resistance R B , body resistance R B It can be used, but is not limited to, to provide a certain negative voltage bias to the body end to improve linearity while reducing RF signal leakage.

[0075] The series branch in the above switch MOS tube model can be used, but not limited to, for transmitting signals when the branch is turned on, and the parallel branch can be used, but not limited to, for preventing signal leakage when the branch is turned off.

[0076] In an exemplary embodiment, the switch MOS tube model may be converted into a target RC lumped element circuit in the following manner, but not limited to: according to the S parameters of the switch MOS tube model, parasitic parameters are extracted from the equivalent circuit models of the on-branch and the off-branch of the switch MOS tube model to obtain target parasitic parameters, wherein the S parameters are used to indicate the frequency domain characteristics of the switch MOS tube model; according to the target parasitic parameters, the switch MOS tube model is equivalently treated using RC lumped elements to obtain the target RC lumped element circuit.

[0077] Optionally, in this embodiment, the S parameters of the switch MOS transistor model are used to indicate the frequency domain characteristics of the switch MOS transistor model, which can be represented by, but not limited to, reflection, crosstalk or loss of the RF signal in the switch MOS transistor model. The S parameters can be, but not limited to, obtained from the simulated switch circuit layout.

[0078] Optionally, in this embodiment, the above-mentioned conducting branch is a circuit when the switch connected in the switch MOS tube model is turned on.

[0079] Optionally, in this embodiment, the above-mentioned shutdown branch is a circuit in which the switch connected in the switch MOS tube model is disconnected.

[0080] Optionally, in this embodiment, the above equivalent circuit model can be obtained by, but is not limited to, equating the on-branch and the off-branch in the switch MOS tube model to an on-resistance and an off-capacitance.

[0081] Optionally, in this embodiment, the parasitic parameters may be, but are not limited to, those generated between the switch MOS tube and the metal interconnection line included in the switch MOS tube model, and may be, but are not limited to, parasitic capacitance and parasitic resistance.

[0082] In an optional embodiment, an example of an equivalent circuit of a switch MOS tube model is provided. Figure 3 Take the L1 branch in the example and shut down the L2 branch. Figure 4is a schematic diagram of an equivalent circuit of a switch MOS tube model according to an embodiment of the present application, such as Figure 4 As shown, in Figure 3 When the L1 branch is turned on and the L2 branch is turned off, the structure of the equivalent circuit of the above-mentioned switch MOS tube model includes the on-resistance Ron1 of the series switch arm, the on-resistance Ron2 of the parallel switch arm, the off-capacitance Coff1 of the series switch arm and the off-capacitance Coff2 of the parallel switch arm.

[0083] In an optional embodiment, an example of a method for calculating a target parasitic parameter is provided. Figure 4 Taking the equivalent circuit of the switch MOS tube model in as an example, the on-resistance Ron1 of the RF switch can be, but is not limited to, the reciprocal of the real part of the transfer admittance corresponding to port out to port in1 when port in1 is short-circuited, using the formula Take the calculation of the on-resistance Ron1 as an example, where Y(in1,out) is used to indicate the transfer admittance corresponding to port out to port in1 when port in1 is short-circuited, and the Real() function is used to obtain the real part of the complex number.

[0084] The off capacitor Coff1 can be, but is not limited to, the quotient of the imaginary part of the sum of the input admittance corresponding to port inl when port out is short-circuited and the transfer admittance corresponding to port out to port in1 when port in1 is short-circuited and 2 multiplied by pi and then multiplied by the operating frequency, and is expressed by the formula Take the calculation of the off capacitance Coff1 as an example, where Y(in1, in1) is used to indicate the input admittance corresponding to port inl when port out is short-circuited, Y(in1, out) is used to indicate the transfer admittance corresponding to port out to port in1 when port in1 is short-circuited, the Imag() function is used to take the imaginary part of a complex number, and freq is the operating frequency.

[0085] For the L2 channel, the capacitance is dominant at this time, Ron2 is approximately short-circuited, and the off capacitance Coff2 can be, but is not limited to, the input admittance corresponding to port in2 when port out is short-circuited and the transfer admittance corresponding to port out to port in2 when port in2 is short-circuited, and the quotient of 2 multiplied by pi and then multiplied by the operating frequency, expressed as the formula Take the calculation of the off capacitance Coff2 as an example, where Y(in2, in2) is used to indicate the input admittance corresponding to port in2 when port out is short-circuited, Y(in2, out) is used to indicate the transfer admittance corresponding to port out to port in2 when port in2 is short-circuited, the Imag() function is used to take the imaginary part of a complex number, and freq is the operating frequency.

[0086] In an optional embodiment, an example of a target RC lumped element circuit simulation is provided. Figure 5 is a schematic diagram of a target RC lumped element circuit simulation according to an embodiment of the present application, such as Figure 5 As shown, the initial RF front-end module can be made to withstand a higher power RF signal by increasing the number of stacked MOS tubes in the switch MOS tube model, but not limited to. Taking 8 MOS tubes stacked in series and parallel branches as an example, the insertion loss and return loss in the target RC lumped element circuit equivalent to the switch MOS tube model are obtained. It can be seen that the port of the target RF switch has an obvious mismatch at high frequencies. The mismatch can be caused by, but not limited to, the turn-off capacitance Coff1 of the MOS tube, the capacitance and resistance parasitics between the MOS tube and the metal interconnection line of the circuit.

[0087] In the technical solution provided in the above step S204, the above-mentioned device to be adjusted may be but not limited to the circuit element included in the initial signal processor, and the above-mentioned device parameters to be adjusted may be but not limited to the adjustable variables of the circuit element included in the initial signal processor, such as: the resistance value of the resistor, the parameters of the inductor, the parameters of the capacitor, etc.

[0088] Optionally, in this embodiment, it is possible but not limited to obtaining all devices in the initial signal processor and determining the devices whose device parameters can be changed without changing the structure of the initial signal processor, and then determining the parameters that can be adjusted by this device as the device parameters to be adjusted in the initial signal processor.

[0089] In an exemplary embodiment, the device parameters to be adjusted in the initial signal processor can be determined in the following manner but is not limited to: obtaining all device parameters in the initial signal processor; screening out device parameters that meet target conditions from all devices as the device parameters to be adjusted, wherein the target conditions include: being adjustable and having no effect on the signal processing performance of the initial signal processor.

[0090] Optionally, in this embodiment, all the above-mentioned device parameters may be but are not limited to the parameters of all circuit elements connected in the initial signal processor. For example, taking the initial signal processor as a filter, the circuit elements connected to the filter may be but are not limited to including inductance elements and capacitance elements, and the parameters of the inductance elements and the capacitance elements are the parameters of the circuit elements in the initial signal processor.

[0091] Optionally, in this embodiment, the device to be adjusted is a circuit element connected inside the initial signal processor, and the device parameters to be adjusted may be, but are not limited to, adjusting the parameters of the circuit element inside the initial signal processor so as not to change the internal structure of the initial signal processor.

[0092] Optionally, in this embodiment, the target conditions may include, but are not limited to, that the parameters of the device are adjustable, and when the parameters of the device are adjusted, the signal processing performance of the initial signal processor is not affected.

[0093] In the technical solution provided in the above step S206, the above target signal processor is obtained by adjusting the parameters of the device to be adjusted in the initial signal processor, that is, the circuit elements and the connection method included in the target signal processor are the same as those of the initial signal processor, and the target signal processor can be obtained by adjusting the parameters of the devices in the initial signal processor that allow adjustment of parameters.

[0094] Optionally, in this embodiment, the above-mentioned target RF front-end module maintains target impedance over the entire frequency band, and it may be, but is not limited to, an RF front-end module having the same circuit elements and connection methods as the initial RF front-end module including the initial signal processor and the target RF switch.

[0095] Optionally, in this embodiment, it is possible but not limited to obtaining the S parameters of the initial signal processor, adjusting the parameters of the device to be adjusted in the initial signal processor, and determining the values ​​of the parameters of the device to be adjusted in the initial signal processor according to the changes in the S parameters of the initial signal processor, so that the target RF front-end module maintains the target impedance over the entire frequency band.

[0096] In an exemplary embodiment, the parameters of the device to be adjusted can be adjusted in the following manner but is not limited to obtain a target RF front-end module including a target signal processor and the target RF switch: obtaining the initial impedance of the initial RF front-end module; adjusting the parameters of the device to be adjusted according to the initial impedance and the target impedance to obtain a target RF front-end module including a target signal processor and the target RF switch.

[0097] Optionally, in this embodiment, the above-mentioned initial impedance may be but is not limited to being due to the presence of parasitic parameters of the target RF switch in the initial RF front-end module, which causes the initial signal processor in the initial RF front-end module and the target RF switch to jointly output an impedance value that is not equal to the target impedance when they fail to match.

[0098] Optionally, in this embodiment, the target impedance of the target signal processor and the target RF switch can be pre-set, but is not limited to. Due to the presence of parasitic parameters in the initial RF front-end module, the output of the initial RF front-end module is the initial impedance. When the parameters of the device to be adjusted in the initial RF front-end module are determined, the parameters of the device to be adjusted in the initial RF front-end module can be adjusted, but is not limited to, so that the output impedance of the signal processor and the target RF switch in the RF front-end module approaches the target impedance from the initial impedance until the target impedance is reached, thereby obtaining the target RF front-end module including the target signal processor and the target RF switch.

[0099] In an exemplary embodiment, the parameters of the device to be adjusted can be adjusted according to the initial impedance and the target impedance in the following manner but is not limited to: the initial impedance is determined as the initial state, the target impedance is determined as the target state, and the parameters of the device to be adjusted are determined as optimization variables; the optimization variables are adjusted to optimize the initial RF front-end module from the initial state to the target state to obtain the optimized target signal processor.

[0100] Optionally, in this embodiment, the above-mentioned initial state may be, but is not limited to, the state of the initial RF front-end module when the initial signal processor and the target RF switch jointly output an initial impedance that is not equal to a predetermined target impedance due to the presence of parasitic parameters in the target RF switch in the initial RF front-end module due to the mismatch between the initial signal processor and the target RF switch.

[0101] Optionally, in this embodiment, the above-mentioned target state may be, but is not limited to, a state in which the target signal processor and the target RF switch eliminate parasitic parameters in the initial RF front-end module by adjusting device parameters in the initial signal processor, so that the target signal processor and the target RF switch jointly output a predetermined target impedance.

[0102] Optionally, in this embodiment, the above-mentioned optimization variables may be, but are not limited to, variables of devices that can be adjusted in the initial signal processor and parameters that can be adjusted to achieve the effect that the target signal processor and the target RF switch can jointly output the target impedance.

[0103] Optionally, in this embodiment, target and optimization controls are added in the simulation software ADS, and the two major controls of target value (GOAL) and optimization function (Optimize) in the ADS software are used to optimize the filter S parameters, set the target value and optimization variables, and use the Optimize function of ADS to perform automatic optimization until the target value (i.e., the above-mentioned target state) is approached. The optimization process is completed, so that the overall model of the filter (i.e., the above-mentioned target signal processor) and the switch equivalent circuit (i.e., the above-mentioned target RF switch) maintains the target impedance in the entire frequency band.

[0104] In an optional embodiment, an example of a switch equivalent circuit of a target RF switch in a RF front-end module is provided. Figure 6 is a schematic diagram of a switch equivalent circuit of a target RF switch in a RF front-end module according to an embodiment of the present application, such as Figure 6 As shown, the RF front-end module may include but is not limited to a switch equivalent circuit of a signal processor Filter and a target RF switch (may include but is not limited to a resistor R1, a capacitor C1, a capacitor C2 and a ground terminal GND), the RF signal may enter through the RFIN port but is not limited to being output through the RFOUT port, may adjust but is not limited to the parameters of the device to be adjusted in the signal processor Filter so that the structure of the signal processor Filter and the target RF switch is not changed, may be substituted by the resistor R1, the capacitor C1 and the capacitor C2 for joint simulation with the signal processor, so that the switch equivalent circuit of the signal processor Filter and the target RF switch jointly outputs the target impedance.

[0105] In an optional embodiment, an example of a construction process of a radio frequency front-end module is provided. Figure 7 is a flowchart of a construction process of a radio frequency front-end module according to an embodiment of the present application, such as Figure 7 As shown, the process may include but is not limited to the following steps:

[0106] Step S702: establishing a schematic diagram and a layout of a switch MOS tube circuit structure (target RF switch) without adding a matching circuit, and simulating the layout to determine the switch circuit structure and layout at this time.

[0107] Step S704: extract parasitic parameters of the equivalent circuit models of the switch on branch and the switch off branch according to the S parameters of the switch layout, and use the RC lumped element network (target RC lumped element circuit) to equate the switch MOS tube model.

[0108] Step S706: construct a filter model (initial signal processor) in the simulation software, and simulate the filter to maintain the target impedance in the entire frequency band of the filter.

[0109] Step S708: The designed filter (initial signal processor) and the equivalent circuit model of the switch (target RF switch) are simulated together in the simulation software. Due to the existence of parasitic parameters of the switch, the filter and the switch cannot be well matched at this time. Therefore, the overall output of the model of the filter and the switch equivalent circuit cannot obtain the target impedance.

[0110] Step S710: Under the condition that the internal structure of the filter model is not changed, the adjustable variables in the filter are determined, and the parameter values ​​of the adjustable variables are defined.

[0111] Step S712: Add target and optimization controls in the simulation software, use the software's built-in target value (GOAL) and optimization function (Optimize) to optimize the filter S parameters, set the target value and optimization variables, and use the simulation software's Optimize function to automatically optimize until the target value is approached and the optimization process is completed, so that the overall model of the filter and switch equivalent circuit maintains the target impedance in the entire frequency band.

[0112] Step S714: Determine the optimized filter parameters and complete the design of the filter and the switch.

[0113] Figure 8 is a schematic diagram of S parameters obtained by simulating an initial signal processor according to an embodiment of the present application, such as Figure 8 As shown, the initial signal processor that is not connected to the target RF switch can be simulated separately, but is not limited to, to obtain the insertion loss and return loss of the initial signal processor. S(2, 1) and S(2, 2) are the S parameters of the initial signal processor obtained when the parameters of the device to be adjusted of the initial signal processor are not adjusted and the target RF switch is not connected; S(4, 3) and S(4, 4) are the S parameters of the signal processor when the initial signal processor is connected to the target RF switch (which can be but is not limited to the switch MOS tube model for an equivalent target RC lumped element circuit) and the parameters of the device to be adjusted of the initial signal processor are adjusted.

[0114] According to S(2, 1), S(2, 2), S(4, 3) and S(4, 4), the electrical performance of the signal processor in the RF front-end module remains basically unchanged. Therefore, the expected RF front-end module function can be achieved only through the signal processor and the target RF switch without adding a matching circuit, thereby reducing the matching circuit between the RF switch and the filter (signal processor) in the RF front-end module, thereby reducing the volume of the RF front-end module.

[0115] Fig. 9 is a schematic diagram of a target RF front-end module simulation according to an embodiment of the present application, such as Fig. 9 As shown, the initial signal processor with adjusted parameters is simulated together with the target RF switch, that is, the target RF front-end module including the target signal processor and the target RF switch is simulated to obtain the S parameter curve of the target RF front-end module. At this time, the overall impedance of the target RF front-end module maintains the target impedance, and the target impedance can be but is not limited to the target impedance of the target RF switch, 50Ω.

[0116] Fig.10 is a schematic diagram of a target signal processor simulation according to an embodiment of the present application, such as Fig.10As shown, the target signal processor in the target RF front-end module with the parameters of the device to be adjusted is simulated separately. S(2, 1) and S(2, 2) are the S parameters of the initial signal processor before the parameters of the device to be adjusted are not adjusted, and S(4, 3) and S(4, 4) are the S parameters of the target signal processor after the parameters of the device to be adjusted are adjusted. Therefore, by comparison, it can be seen that the impedance of the signal processor is not matched at this time.

[0117] It can be seen that the filter designed using this method makes full use of the parasitic parameters of the RF switch. The RF switch is designed first, without considering its parasitic parameters, and the filter that meets the electrical performance requirements is designed. Then the RF switch and the filter are designed as a whole so that they can meet the electrical performance index requirements and the overall impedance maintains the standard impedance.

[0118] Through the description of the above implementation methods, those skilled in the art can clearly understand that the method according to the above embodiment can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), and includes a number of instructions for a terminal device (which can be a mobile phone, computer, server, or network device, etc.) to execute the methods described in each embodiment of the present application.

[0119] In this embodiment, a radio frequency front-end module is also provided. Fig.11 is a schematic diagram of a radio frequency front-end module according to an embodiment of the present application, such as Fig.11 As shown, the RF front-end module includes: a target signal processor 1102 (including: signal processing branches 1-N) and the target RF switch 1104, wherein:

[0120] The target signal processor 1102 is connected to the target RF switch 1104, the target signal processor 1102 is used to process the RF signal, the target RF switch 1104 is used to control the on and off of the RF signal between the target signal processor 1102 and the RF antenna 1100, and the target RF front-end module including the target signal processor 1102 and the target RF switch 1104 maintains the target impedance over the full frequency band;

[0121] The target signal processor 1102 is obtained by constructing an initial RF front-end module including an initial signal processor and the target RF switch 1104, wherein the initial signal processor maintains the target impedance over the entire frequency band; determining the device parameters to be adjusted in the initial signal processor, wherein the device parameters to be adjusted are device parameters that are allowed to be adjusted on the devices included in the initial signal processor; and adjusting the device parameters to be adjusted.

[0122] Through the above-mentioned RF front-end module, an initial RF front-end module including an initial signal processor that maintains the target impedance over the entire frequency band and a target RF switch for controlling the on and off of the RF signal between the initial signal processor and the RF antenna is constructed, and the initial signal processor is used to perform signal processing on the RF signal; then determine the device parameters to be adjusted on the device included in the initial signal processor that allow the device parameters to be adjusted; by adjusting the device parameters to be adjusted, a target RF front-end module including a target signal processor and a target RF switch and maintaining the target impedance over the entire frequency band is obtained. In other words, by adjusting the device parameters to be adjusted in the initial signal processor that has maintained the target impedance, the parasitic capacitance generated by the target RF switch is eliminated. The influence of the equivalent impedance of the entire RF front-end module, so that the target RF switch and the initial signal processor (i.e., the target signal processor) that has adjusted the device parameters to be adjusted can still maintain the target impedance over the entire frequency band to obtain the target RF front-end module without adding a matching circuit, thereby reducing the number of devices in the circuit. Therefore, the problem of the large volume of the RF front-end module can be solved, and the volume effect of the RF front-end module can be reduced.

[0123] In an exemplary embodiment, an initial RF front-end module including an initial signal processor and a target RF switch can be constructed in the following manner, but is not limited to: constructing a switch MOS tube model as the target RF switch; converting the switch MOS tube model into a target RC lumped element circuit, wherein the target RC lumped element circuit is an equivalent circuit of the switch MOS tube model constructed using RC lumped elements; establishing a connection between the initial signal processor and the target RC lumped element circuit to obtain the initial RF front-end module.

[0124] In an exemplary embodiment, the target RC lumped element circuit can be obtained by converting the switch MOS tube model in the following manner, but is not limited to: extracting parasitic parameters of an equivalent circuit model of a turn-on branch and a turn-off branch of the switch MOS tube model according to S parameters of the switch MOS tube model to obtain target parasitic parameters, wherein the S parameters are used to indicate frequency domain characteristics of the switch MOS tube model; and performing equivalent operation on the switch MOS tube model using RC lumped elements according to the target parasitic parameters to obtain the target RC lumped element circuit.

[0125] In an exemplary embodiment, the device parameters to be adjusted in the initial signal processor can be determined, but not limited to, in the following manner: obtaining all device parameters in the initial signal processor; screening out device parameters that meet target conditions from all devices as the device parameters to be adjusted, wherein the target conditions include: being adjustable and having no effect on the signal processing performance of the initial signal processor.

[0126] In an exemplary embodiment, the parameters of the device to be adjusted can be adjusted in the following manner but is not limited to obtain a target RF front-end module including a target signal processor and the target RF switch: obtaining the initial impedance of the initial RF front-end module; adjusting the parameters of the device to be adjusted according to the initial impedance and the target impedance to obtain a target RF front-end module including a target signal processor and the target RF switch.

[0127] In an exemplary embodiment, the parameters of the device to be adjusted can be adjusted according to the initial impedance and the target impedance in the following manner but is not limited to: the initial impedance is determined as the initial state, the target impedance is determined as the target state, and the parameters of the device to be adjusted are determined as optimization variables; the optimization variables are adjusted to optimize the initial RF front-end module from the initial state to the target state to obtain the optimized target signal processor.

[0128] In this embodiment, a device for constructing a radio frequency front-end module is also provided, which is used to implement the above-mentioned embodiments and preferred implementation modes, and the descriptions that have been made will not be repeated. As used below, the term "module" can implement a combination of software and / or hardware for a predetermined function. Although the devices described in the following embodiments are preferably implemented in software, the implementation of hardware, or a combination of software and hardware, is also possible and conceivable.

[0129] Fig.12 is a structural block diagram of a device for constructing a radio frequency front-end module according to an embodiment of the present application, such as Fig.12 As shown, the device comprises:

[0130] A construction module 1202 is used to construct an initial RF front-end module including an initial signal processor and a target RF switch, wherein the initial signal processor maintains a target impedance over the entire frequency band, the initial signal processor is used to perform signal processing on the RF signal, and the target RF switch is used to control the on / off of the RF signal between the initial signal processor and the RF antenna;

[0131] A determination module 1204 is used to determine a device parameter to be adjusted in the initial signal processor, wherein the device parameter to be adjusted is a device parameter that is allowed to be adjusted on the device included in the initial signal processor;

[0132] The adjustment module 1206 is used to adjust the parameters of the device to be adjusted to obtain a target RF front-end module including a target signal processor and the target RF switch, wherein the target RF front-end module maintains the target impedance over the entire frequency band.

[0133] Through the above device, an initial RF front-end module including an initial signal processor that maintains the target impedance over the entire frequency band and a target RF switch for controlling the on / off of the RF signal between the initial signal processor and the RF antenna is constructed, and the initial signal processor is used to perform signal processing on the RF signal; then determine the device parameters to be adjusted on the device included in the initial signal processor that allow the device parameters to be adjusted; by adjusting the device parameters to be adjusted, a target RF front-end module including a target signal processor and a target RF switch and maintaining the target impedance over the entire frequency band is obtained. In other words, by adjusting the device parameters to be adjusted in the initial signal processor that has maintained the target impedance, the influence of the parasitic capacitance generated by the target RF switch on the equivalent impedance of the entire RF front-end module is eliminated, so that the target RF switch and the initial signal processor (i.e., the target signal processor) that has adjusted the device parameters to be adjusted can still maintain the target impedance over the entire frequency band to obtain the target RF front-end module without adding a matching circuit, thereby reducing the number of devices in the circuit. Therefore, the problem of the large volume of the RF front-end module can be solved, and the volume effect of reducing the RF front-end module can be achieved.

[0134] In an exemplary embodiment, the building block comprises:

[0135] A construction unit, used to construct a switch MOS tube model as the target RF switch;

[0136] A conversion unit, used for converting the switch MOS tube model into a target RC lumped element circuit;

[0137] An establishing unit is used to establish a connection between the initial signal processor and the target RC lumped element circuit to obtain the initial RF front-end module.

[0138] In an exemplary embodiment, the conversion unit is used to: extract parasitic parameters of an equivalent circuit model of a turn-on branch and a turn-off branch of the switch MOS tube model according to the S parameters of the switch MOS tube model to obtain target parasitic parameters; and perform equivalent operation on the switch MOS tube model using RC lumped elements according to the target parasitic parameters to obtain the target RC lumped element circuit.

[0139] In an exemplary embodiment, the determining module includes:

[0140] A first acquisition unit, used for acquiring all device parameters in the initial signal processor;

[0141] The screening unit is used to screen out device parameters that are adjustable from all the devices and whose parameter adjustment has no effect on the signal processing performance of the initial signal processor as the device parameters to be adjusted.

[0142] In an exemplary embodiment, the adjustment module includes:

[0143] A second acquisition unit, used to acquire the initial impedance of the initial RF front-end module;

[0144] An adjusting unit is used to adjust the parameters of the device to be adjusted according to the initial impedance and the target impedance to obtain a target RF front-end module including a target signal processor and the target RF switch.

[0145] In an exemplary embodiment, the adjustment unit is used to: determine the initial impedance as the initial state, determine the target impedance as the target state, and determine the device parameters to be adjusted as optimization variables; adjust the optimization variables to optimize the initial RF front-end module from the initial state to the target state to obtain the optimized target signal processor.

[0146] It should be noted that the above modules can be implemented by software or hardware. For the latter, it can be implemented in the following ways, but not limited to: the above modules are all located in the same processor; or the above modules are located in different processors in any combination.

[0147] An embodiment of the present application further provides a computer-readable storage medium, in which a computer program is stored, wherein the computer program is configured to execute the steps of any of the above method embodiments when running.

[0148] In an exemplary embodiment, the computer-readable storage medium may include, but is not limited to, various media that can store computer programs, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk.

[0149] An embodiment of the present application further provides an electronic device, including a memory and a processor, wherein a computer program is stored in the memory, and the processor is configured to run the computer program to execute the steps in any one of the above method embodiments.

[0150] In an exemplary embodiment, the electronic device may further include a transmission device and an input / output device, wherein the transmission device is connected to the processor, and the input / output device is connected to the processor.

[0151] For specific examples in this embodiment, reference may be made to the examples described in the above embodiments and exemplary implementation modes, and this embodiment will not be described in detail herein.

[0152] Obviously, those skilled in the art should understand that the above modules or steps of the present application can be implemented by a general computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order from that herein, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present application is not limited to any specific combination of hardware and software.

[0153] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the principles of the present application shall be included in the protection scope of the present application.

Claims

1. A method for constructing a radio frequency front-end module, characterized in that: include: Constructing an initial RF front-end module including an initial signal processor and a target RF switch, wherein the initial signal processor maintains a target impedance over the entire frequency band, the initial signal processor is used to process the RF signal, and the target RF switch is used to control the on / off of the RF signal between the initial signal processor and the RF antenna; Determining a device parameter to be adjusted in the initial signal processor, wherein the device parameter to be adjusted is a device parameter allowed to be adjusted on a device included in the initial signal processor; Adjusting the parameters of the device to be adjusted to obtain a target RF front-end module including a target signal processor and the target RF switch, wherein the target RF front-end module maintains the target impedance over the entire frequency band; Among them, the construction includes an initial RF front-end module including an initial signal processor and a target RF switch, including constructing a switch MOS tube model as the target RF switch; converting the switch MOS tube model into a target RC lumped element circuit, wherein the target RC lumped element circuit is an equivalent circuit of the switch MOS tube model constructed using RC lumped elements; establishing a connection between the initial signal processor and the target RC lumped element circuit to obtain the initial RF front-end module.

2. The method according to claim 1, characterized in that The converting the switch MOS tube model into a target RC lumped element circuit comprises: According to the S parameters of the switch MOS tube model, parasitic parameters are extracted from the equivalent circuit models of the on branch and the off branch of the switch MOS tube model to obtain target parasitic parameters, wherein the S parameters are used to indicate the frequency domain characteristics of the switch MOS tube model; The switch MOS tube model is equivalently treated using RC lumped elements according to the target parasitic parameters to obtain the target RC lumped element circuit.

3. The method according to claim 1, characterized in that The step of determining the device parameters to be adjusted in the initial signal processor comprises: Acquiring all device parameters in the initial signal processor; Device parameters that meet target conditions are screened out from all the devices as the device parameters to be adjusted, wherein the target conditions include: being adjustable and having no influence on the signal processing performance of the initial signal processor.

4. The method according to claim 1, characterized in that: The step of adjusting the parameters of the device to be adjusted to obtain a target RF front-end module including a target signal processor and the target RF switch includes: Obtaining the initial impedance of the initial RF front-end module; The parameters of the device to be adjusted are adjusted according to the initial impedance and the target impedance to obtain a target RF front-end module including a target signal processor and the target RF switch.

5. The method according to claim 4, characterized in that The step of adjusting the parameter of the device to be adjusted according to the initial impedance and the target impedance includes: Determine the initial impedance as an initial state, the target impedance as a target state, and the device parameter to be adjusted as an optimization variable; The optimization variables are adjusted to optimize the initial RF front-end module from the initial state to the target state to obtain the optimized target signal processor.

6. A radio frequency front-end module, characterized in that: include: A target signal processor and the target radio frequency switch, wherein: The target signal processor is connected to the target RF switch, the target signal processor is used to process the RF signal, the target RF switch is used to control the on / off of the RF signal between the target signal processor and the RF antenna, and the target RF front-end module including the target signal processor and the target RF switch maintains the target impedance over the entire frequency band; The target signal processor is obtained by constructing an initial RF front-end module including an initial signal processor and the target RF switch, wherein the construction of the initial RF front-end module including the initial signal processor and the target RF switch includes constructing a switch MOS tube model as the target RF switch; converting the switch MOS tube model into a target RC lumped element circuit, wherein the target RC lumped element circuit is an equivalent circuit of the switch MOS tube model constructed using RC lumped elements; establishing a connection between the initial signal processor and the target RC lumped element circuit to obtain the initial RF front-end module; the initial signal processor maintains a target impedance over the entire frequency band; determining a device parameter to be adjusted in the initial signal processor, wherein the device parameter to be adjusted is a device parameter allowed to be adjusted on a device included in the initial signal processor; and the device parameter to be adjusted is obtained by adjusting the device parameter to be adjusted.

7. A device for constructing a radio frequency front-end module, characterized in that: include: A construction module, used to construct an initial RF front-end module including an initial signal processor and a target RF switch, wherein the initial signal processor maintains a target impedance over the entire frequency band, the initial signal processor is used to perform signal processing on the RF signal, and the target RF switch is used to control the on / off of the RF signal between the initial signal processor and the RF antenna; A determination module, used for determining a device parameter to be adjusted in the initial signal processor, wherein the device parameter to be adjusted is a device parameter allowed to be adjusted on the device included in the initial signal processor; An adjustment module, used for adjusting the parameters of the device to be adjusted to obtain a target RF front-end module including a target signal processor and the target RF switch, wherein the target RF front-end module maintains the target impedance over the entire frequency band; Wherein, the building blocks include: A construction unit is used to construct a switch MOS tube model as the target RF switch; a conversion unit is used to convert the switch MOS tube model into a target RC lumped element circuit, wherein the target RC lumped element circuit is an equivalent circuit of the switch MOS tube model constructed using RC lumped elements; an establishment unit is used to establish a connection between the initial signal processor and the target RC lumped element circuit to obtain the initial RF front-end module.

8. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, wherein the computer program implements the steps of the method described in any one of claims 1 to 5 when executed by a processor.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method described in any one of claims 1 to 5 are implemented.

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