High-temperature high-power hybrid integrated device and packaging method thereof

Abstract

The application discloses a high-temperature high-power hybrid integrated device and a packaging method thereof, and belongs to the technical field of integrated circuits. The device comprises a circuit module (1) and a heat storage unit box body (2) provided with an inner cavity. A recess (21) is arranged on the surface of the heat storage unit box body (2), the circuit module (1) is fixedly connected in the recess (21), the circuit module (1) is in contact with the heat storage unit box body (2) to form heat conduction, a first filling body (3) composed of phase change heat storage materials is arranged in the heat storage unit box body (2), and a heat insulation layer (6) is arranged on the outer surface of the heat storage unit box body (2). The application effectively improves the heat dissipation capacity and high-temperature resistance of the circuit module, simultaneously reduces the temperature of internal components of the circuit, enables the circuit to normally work in the case that components and materials with a rated working temperature lower than an ambient temperature are adopted, and avoids the adoption of valuable high-temperature components and materials, so that the economic cost of the circuit module is reduced as a whole.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit technology, and more specifically to a high-temperature, high-power hybrid integrated device and its packaging method. Background Technology

[0002] High-temperature, high-power circuits are characterized by both high-temperature and high-power requirements; specifically, they require high power output internally and a high-temperature environment externally. Hybrid integrated circuits typically employ a ceramic substrate and metal packaging structure. A representative power device is the semiconductor power chip. The bottom surface of the power chip is soldered onto the surface of the ceramic substrate, which is then soldered onto the inner surface of the metal casing. Electrical interconnections between the chip and the substrate, between the chip and the outer leads of the casing, and between the substrate and the outer leads of the casing are typically achieved using wire bonding. Gold wire bonding is used for low-current applications, while thick aluminum wire bonding is used for high-current applications. This assembly and packaging structure and process are generally well-suited for power hybrid integrated circuit products.

[0003] Currently, the main measures taken to improve the high-temperature resistance of high-power circuits are to enhance the high-temperature performance of internal components. This involves using high-temperature chips and passive components such as high-temperature capacitors and resistors, while also considering the use of high-temperature resistant assembly materials and processes. However, the high-temperature resistance of the components, materials, and processes used is limited. For example, the high-temperature resistance range of components such as chips is typically only 150-175 degrees Celsius. Under the harsh conditions of high power output and high-temperature environment, the circuit temperature will continue to rise after prolonged operation, significantly exceeding the ambient temperature (e.g., 150-175 degrees Celsius, or even reaching over 200 degrees Celsius). This causes the components within the circuit to malfunction, and some of the materials and processes used to lose their normal performance.

[0004] On the other hand, from the perspective of power circuit packaging, current power chips are assembled on ceramic substrates using solder. However, as chip power increases, this assembly method struggles to meet the ever-increasing heat dissipation requirements. For wire bonding interconnects, under high-temperature, high-power conditions, gold-aluminum intermetallic compounds form between the gold wire and the aluminum electrode (PAD) on the chip surface, and between the thick aluminum wire and the gold bonding interface. These compounds can lead to reliability issues under prolonged high-temperature, high-power conditions. Furthermore, due to the large distance between the circuit board and the external leads, and the length of the bonding wires, the bonding wires are prone to tilting during impacts or vibrations, resulting in short circuits between adjacent bonding wires or with adjacent conductors.

[0005] In existing technologies, heat dissipation is achieved by setting up heat dissipation channels inside the circuit. However, this structure is not suitable for situations where there are both high external temperatures and high power. If the external environment of the circuit is hot, the internal temperature of the circuit will also increase after prolonged operation, and the heat dissipation channels cannot effectively exchange heat to reduce the temperature of the integrated circuit.

[0006] Therefore, there is a need for a high-power hybrid integrated device and its packaging method that can meet the requirements of high-temperature operating environments. Summary of the Invention

[0007] To address the aforementioned technical problems, this invention provides a high-temperature, high-power hybrid integrated device and its packaging method.

[0008] A high-temperature, high-power hybrid integrated device is characterized by comprising a circuit module and a heat storage unit box with an inner cavity. A groove and a filling port for filling phase change heat storage material are provided on the top side surface of the heat storage unit box. The bottom of the groove is fixedly connected to the circuit module. A heat conduction port is provided at the bottom of the groove and communicates with the inner cavity. The bottom of the groove is fixedly connected to the circuit module. The lower end of the circuit module covers the heat conduction port. The inner cavity of the heat storage unit box is provided with a first filler composed of phase change heat storage material. The first filler contacts the circuit module through the heat conduction port to form heat conduction.

[0009] The sidewall of the groove is provided with a flow guide port that communicates with the inner cavity. There is a gap between the sidewall of the groove and the circuit module. A second filler composed of phase change heat storage material is provided at the gap. The second filler contacts the sidewall of the groove and the sidewall of the circuit module and covers the exposed surface of the circuit module. The second filler contacts the first filler through the flow guide port to form heat conduction. The first and second fillers are integrally formed.

[0010] A heat insulation layer is provided on the outer surface of the heat storage unit box and the exposed surface of the second filler body.

[0011] Furthermore, the phase change thermal storage material is a material with a high volume enthalpy value, including high-carbon sugar alcohols and pentaerythritol.

[0012] Furthermore, the circuit module includes a metal casing and pins extending into the metal casing. A ceramic substrate is fixedly connected inside the metal casing. A set of assembly slots is provided on the ceramic substrate. A metallization layer is provided at the bottom of each assembly slot. Nano silver paste is provided on the metallization layer. Chips are bonded to the assembly slots through nano silver paste. There is a gap between the sidewall of the chip and the wall of the assembly slot. The gap is filled and bonded by nano silver paste. The upper surface of the chip is flush with the upper surface of the ceramic substrate. The protruding ends of the pins are bonded to the ceramic substrate and / or the chip through bonding wires.

[0013] Furthermore, the bonding area of ​​the pin extension end is a flat structure with two planes, the upper plane being the bonding surface and the lower plane being fixed to the ceramic strip (which is welded inside the metal shell).

[0014] Furthermore, when the bonding wire is used for the flow of a small current, the bonding wire is a gold wire with an insulating layer on its surface. The first bonding point of the bonding wire adopts a spherical bonding and is located in the bonding area of ​​the pin. The second bonding point is a composite bonding structure, which includes: a primary bonding is a wedge bonding, which is located in the bonding area of ​​the ceramic substrate and / or the chip; and a secondary bonding is a spherical bonding, which is located above the wedge bonding.

[0015] When the bonding wire is used for high current flow, the bonding wire is a gold-plated coarse aluminum wire. The first bonding point is located in the bonding area of ​​the pin, and the second bonding point is located on the surface of the composite conductive strip on the ceramic substrate. The composite conductive strip consists of two layers of conductive strips. The first layer of conductive strip is a silver-palladium conductor, and the second layer of conductive strip is a gold conductor. The second layer of conductive strip covers the first layer of conductive strip. During bonding, the gold-plated coarse aluminum wire can achieve gold-gold homogeneous bonding on the surface of the ceramic substrate.

[0016] The present invention also provides a packaging method for a high-temperature, high-power hybrid integrated device, characterized by comprising the following steps:

[0017] S1. Fabricate a circuit module encapsulated in a metal casing;

[0018] S2. Apply nano silver paste to the bottom of the groove, and sinter the circuit module in the groove using the nano silver paste to form a fixed connection between the circuit module and the heat storage unit box.

[0019] S3. Place the heat storage unit box with the filling port facing upwards, and pour phase change heat storage material into the heat storage unit box through the filling port. The phase change heat storage material enters the heat storage unit box and then flows into the gap between the groove sidewall and the circuit module through the guide port and covers the top surface of the circuit module, thus forming the first filler and the second filler in sequence.

[0020] S4. A heat insulation layer is jointly applied to the outer surface of the heat storage unit box and the exposed side of the second filler body.

[0021] Further, step 1 includes:

[0022] 1) Weld a ceramic strip inside the metal casing and fix it in place. The pins extend into the metal casing and the lower surface of the flat structure at the extended end is welded and fixed to the ceramic strip.

[0023] 2) The ceramic substrate is welded inside the metal shell, and the chip is fixedly connected in the assembly groove of the ceramic substrate. The upper surface of the chip is flush with the upper surface of the ceramic substrate. Nano silver paste is coated on the metallization layer at the bottom of the assembly groove, and the chip is bonded to the assembly groove by the nano silver paste. The gap between the groove wall and the chip is filled with nano silver paste to form an adhesive, and the nano silver paste is flush with the chip surface.

[0024] 3) Wire bonding: Using a bonding machine to bond the lead extension end to the ceramic substrate and / or chip;

[0025] When bonding wires are used for low current flow, gold wires with an insulating layer on their surface are used as bonding wires. First, the bonding machine uses a ball bonding method to bond the bonding wires to the bonding area of ​​the pins. This bonding point is the first bonding point. Then, the bonding machine uses a composite bonding structure to bond the bonding wires to the bonding area of ​​the ceramic substrate and / or the chip. This bonding point is the second bonding point. The composite bonding includes: first, a wedge bonding method is used for a first bonding, and then a ball bonding method is used for a second bonding on top of the wedge bonding.

[0026] When bonding wires are used for high current flow, gold-plated coarse aluminum wires are used as bonding wires. First, the bonding machine bonds the bonding wires to the bonding area of ​​the pins, and this bonding point is called the first bonding point. Then, the bonding machine bonds the bonding wires to the surface of the composite conductive strip on the ceramic substrate, and this bonding point is called the second bonding point. The composite conductive strip consists of two layers of conductive strips. The first layer of conductive strip is a silver-palladium conductor, and the second layer of conductive strip is a gold conductor. The second layer of conductive strip covers the first layer of conductive strip. During bonding, the gold-plated coarse aluminum wire can achieve gold-gold homogeneous bonding on the surface of the ceramic substrate.

[0027] 4) The open side of the metal casing is sealed by a welded cover plate.

[0028] Compared with existing technologies, the present invention has the following advantages:

[0029] In a first aspect, the circuit module of this invention incorporates an assembly groove on a ceramic substrate. A metallization layer is located at the bottom of the assembly groove, and the metallization layer forms an electrical connection with the surface conductor of the ceramic substrate through an inner conductor. The bottom of the chip is bonded to the metallization layer within the groove using nano-silver paste. The chip surface is approximately flush with the substrate surface. Nano-silver paste fills the gaps between the chip and the groove walls, with the paste in the gaps flush with the chip surface. Nano-silver paste possesses high thermal conductivity and high electrical conductivity, and its sintering temperature can be as low as 150°C, but its post-sintering temperature tolerance can reach over 500°C, making it particularly suitable for high-temperature, high-power circuits. Compared to conventional chips where only the bottom of the chip is assembled on the substrate surface, this chip assembly structure and process have the following advantages: First, it increases the heat dissipation channels on the sides of the chip, significantly enhancing its heat dissipation effect. Second, due to the use of a groove-shaped structure, the thickness of the aluminum nitride ceramic layer between the bottom of the chip and the metal casing is reduced, thereby lowering the thermal resistance between the chip and the metal casing and improving the heat dissipation capacity of the package. Third, the addition of four side bonding surfaces significantly increases the overall assembly strength of the chip, allowing it to withstand stronger mechanical stress under vibration and impact. Fourth, nano-silver paste has high thermal conductivity and high electrical conductivity, especially since its sintering temperature can be as low as 150℃, but its temperature resistance after sintering can reach over 500℃, making it particularly suitable for high-temperature, high-power circuits.

[0030] Secondly, the lower surface of the lead extension is soldered to the upper surface of the ceramic strip, and the lower surface of the ceramic strip is soldered to the bottom surface of the metal casing. The advantages of this ceramic strip assembly structure are: firstly, because the flat end of the lead is cantilevered within the casing, when the bonding wedge performs bonding at the flat end, the wedge pressure directly causes the flat end to vibrate vertically (more pronounced during coarse wire bonding), thus adversely affecting the stability of the bonding and making it difficult to guarantee a reliable bond at the flat end interface. The ceramic strip assembly structure provides good support for the flat end of the lead, eliminating the adverse effects of vertical vibration on stable bonding during bonding and ensuring bonding reliability. Secondly, when a large current flows through the lead, the lead bonding interface generates significant Joule heat. The ceramic strip assembly structure provides a good heat dissipation path for wire bonding, allowing heat to dissipate quickly through the flat end and the ceramic strip, avoiding localized heat concentration at the wire bonding interface and ensuring the reliability of the wire bonding from a heat dissipation perspective.

[0031] Thirdly, the bonding wire connection between the ceramic substrate, chip, and pins of this invention has the following advantages: First, because the surface of the insulating gold wire is coated with a nano-organic insulating coating, even if two adjacent bonding wires are side-lapped together under high-intensity vibration and impact, a short circuit will not be formed between the two bonding wires, thereby significantly improving the vibration and impact resistance under high-density bonding conditions; Second, because a trace amount of palladium is doped into the gold wire, harmful gold-aluminum intercompounds (which will form a void effect at high temperatures) can be prevented from being generated at the gold-aluminum bonding interface, thereby ensuring the stability and reliability of the gold wire bonding at high temperatures; Third, under normal circumstances, the second bonding point of the gold wire is a wedge-shaped bond, and its bonding strength is obviously less than that of a spherical bond, which is prone to debonding under strong vibration and impact. The second bonding point of the gold wire in this invention is a composite bonding structure. It first forms a wedge-shaped bond at the bottom layer, and then performs a spherical bond on top of the wedge-shaped bond, thereby reinforcing the wedge-shaped bond and ensuring resistance to strong vibrations and impacts. Fourth, the gold plating on the surface of the coarse aluminum wire ensures a gold-gold homogeneous bond in the bonding area between the external lead and the ceramic substrate, which has higher reliability than coarse wire bonding between different metals such as gold and aluminum. Fifth, because the ultrasonic energy is significantly increased during coarse wire bonding (compared to thin wire), and the bonding strength between the gold conductor and the ceramic is relatively low (compared to silver-based conductors), the gold conductor may be pulled up during coarse wire bonding, forming voids at the bonding point. The substrate conductor corresponding to the second bonding point of the coarse wire in this invention has a two-layer composite structure. The first layer, a silver-palladium conductor, effectively increases the adhesion strength between the conductor and the substrate, preventing voids in the conductor during coarse wire bonding. The second layer, a gold conductor, enables the gold-plated coarse aluminum wire to achieve a highly reliable gold-gold homogeneous bond on the substrate surface.

[0032] Fourthly, this invention, while ensuring good resistance to thermal and mechanical stress within the circuit module, specifically incorporates a heat storage and insulation structure. Firstly, a heat storage unit is fabricated, with a heat-conducting port at the bottom of the groove in the unit's housing. This allows the phase change heat storage material inside the unit to directly connect and contact the bottom surface of the circuit module via the heat-conducting port, enabling more direct transfer and storage of heat generated by the circuit module itself within the phase change heat storage material. Simultaneously, the groove structure and the flow guide ports on its sidewalls integrate the phase change heat storage material within the groove and the heat storage unit housing, encapsulating the sides and top of the circuit module to maximize the overall heat storage effect and prevent continuous temperature increases within the circuit module. Secondly, a specialized insulation layer is fabricated on the surface of the heat storage unit, completely encapsulating it. This eliminates or reduces the impact of the external environment on the heat storage unit, isolating the high-temperature heat from the external environment outside the circuit module.

[0033] The above measures effectively improve the high-temperature resistance of the circuit module and reduce the temperature of the internal components. This allows the circuit to still function normally even when using components and materials with rated operating temperatures lower than ambient temperatures, thus avoiding the use of expensive high-temperature components and materials and reducing the overall economic cost of the circuit module. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the appearance of a high-temperature, high-power hybrid integrated device according to an embodiment of the present invention;

[0035] Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure along the AA direction;

[0036] Figure 3 This is a schematic diagram of the structure of the heat storage unit box in an embodiment of the present invention;

[0037] Figure 4 This is a schematic diagram of the circuit module in an embodiment of the present invention;

[0038] Figure 5 yes Figure 4 Schematic diagram of the local structure in the B direction.

[0039] Explanation of reference numerals in the attached drawings: 1. Circuit module; 11. Metal casing; 12. Ceramic substrate; 13. Assembly slot; 14. Pin; 15. Cover plate; 16. Ceramic strip; 17. Bonding wire; 2. Heat storage unit housing; 21. Groove; 22. Heat conduction port; 23. Flow guide port; 24. Filling port; 3. First filler; 4. Second filler; 6. Insulation layer. Implementation

[0040] To make the present invention clearer, a high-temperature high-power hybrid integrated device and its packaging method according to the present invention will be further described below with reference to the accompanying drawings. The specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention.

[0041] like Figures 1 to 4As shown, a high-temperature, high-power hybrid integrated device includes a circuit module 1 and a heat storage unit housing 2 with an inner cavity. An inwardly facing groove 21 is provided on the top surface of the heat storage unit housing 2. The groove 21 is adapted to the contour of the circuit module 1; in this example, the circuit module 1 has a rectangular contour. The depth of the groove 21 is slightly greater than the height of the circuit module 1's housing, and the length and width of the groove 21 are slightly greater than the length and width of the circuit module 1. A heat conduction port 22 is provided at the bottom of the groove 21, and a flow guide port 23 is provided on each of the four side walls of the groove 21. Both the heat conduction port 22 and the flow guide port 23 are connected to the inner cavity of the heat storage unit housing 2. Nano-silver paste is coated on the bottom of the groove 21, and the bottom end of the circuit module 1 is bonded and fixed to the groove 21 using nano-silver paste. The heat conduction port 22 is located directly below the circuit module 1, and the bottom end of the circuit module 1 completely covers the heat conduction port 22. The inner cavity of the heat storage unit box 2 is provided with a first filler 3 composed of phase change heat storage material. The first filler 3 contacts the circuit module 1 through the heat conduction port 22 to form heat conduction. A filling port 24 is also provided on the top side of the heat storage unit box 2. The filling port 24 is connected to the inner cavity of the heat storage unit box 2 and is used to fill in the phase change heat storage material.

[0042] A gap is formed between the sidewall of the groove 21 and the circuit module 1. A second filler 4 composed of phase change thermal storage material is provided in this gap. The second filler 4 contacts the sidewall of the groove 21 and the circuit module 1, and covers the exposed surface of the top side of the circuit module 1. The second filler 4 completely covers the peripheral and top surfaces of the circuit module 1 (the corresponding pin roots are also completely covered). The second filler 4 contacts the first filler 3 through the flow guide 23 to form heat conduction. At the same time, the first and second fillers are integrally formed in one piece. The integrally formed thermal storage structure makes the temperature distribution of the phase change thermal storage material more uniform and is more conducive to its thermal storage function. A heat insulation layer 6 is covered on the outer surface of the thermal storage unit box 2 and the exposed surface of the second filler 4.

[0043] In this embodiment, the phase change thermal storage material is an existing material, preferably a material with a high volume enthalpy, such as high-carbon sugar alcohol or pentaerythritol; the thermal insulation layer 6 is coated with a thermal insulation material of the prior art, such as aerogel.

[0044] like Figure 4As shown, the circuit module 1 includes a metal casing 11, which may be made of copper-based metal. The casing has an open top, and a metal cover plate 15 is laser-sealed at the open top. A ceramic substrate 12, specifically an aluminum nitride ceramic substrate, is welded to the inner bottom surface of the metal casing 11 using eutectic solder. A set of assembly slots 13 are provided on the upper surface of the ceramic substrate 12 for fixing and mounting the chip. A metallization layer is provided at the bottom of the assembly slots 13, and this metallization layer forms an electrical connection with the surface conductor of the ceramic substrate through an inner conductor. The length and width of the assembly slots 13 are approximately 2 mm greater than the length and width of the chip, and the slot depth is approximately 0.2 mm greater than the chip thickness. The bottom of the chip is bonded to the metallization layer within the slot using nano-silver paste, which is approximately 0.2 mm thick. The upper surface of the chip is flush with the upper surface of the ceramic substrate. The gap between the chip side and the slot wall of the assembly slot 13 is approximately 1 mm wide, filled with nano-silver paste that is flush with the chip surface.

[0045] A set of pins 14 is provided on both sides of the metal casing 11. The pins 14 can be cylindrical gold-plated Kova pins. One end of the pin 14 extends into the metal casing 11, and the pin axis of the extended end is parallel to the upper surface of the ceramic substrate 12. After the casing is sealed, the pins outside the metal casing 11 are bent toward the cover plate 15 at a bending angle of 90 degrees.

[0046] like Figure 5 As shown, the bonding area of ​​the pin's extension end has a flat structure with two parallel planes, the upper plane being the bonding surface and the lower plane being welded and fixed to the ceramic strip 16, which is welded inside the metal casing 11. The ceramic strip 16 is an aluminum nitride ceramic strip, with pads on both its upper and lower ends. The upper end is welded to the lower plane of the pin's flat structure via corresponding pads. The pads on the lower end of the ceramic strip 16 cover its entire lower end and are soldered to the inner bottom surface of the metal casing 11.

[0047] The ceramic substrate 12 and the chip are bonded to the pin 14 via bonding wire 17. When the bonding wire is used for the flow of a small current (typically less than 0.9A), the bonding wire 17 is a gold wire with an insulating layer on its surface. The first bonding point of the bonding wire 17 is a ball-shaped bond located at the insertion end of the pin 14, and the second bonding point is a composite bonding structure, including: a wedge-shaped bond located at the bonding point of the ceramic substrate 12 and / or the chip, and a secondary ball-shaped bond located above the wedge-shaped bond;

[0048] When the bonding wire is used for high current (typically greater than or equal to 0.9A), the bonding wire 17 is a gold-plated coarse aluminum wire. The first bonding point is located at the insertion end of the pin 14, and the second bonding point is located on the surface of the composite conductive strip on the ceramic substrate 12. This composite conductive strip consists of two layers: the first layer is a silver-palladium conductor, and the second layer is a gold conductor. The second layer covers the first layer, allowing the gold-plated coarse aluminum wire to achieve gold-gold homogeneous bonding on the ceramic substrate surface during bonding. The insulating layer of the gold wire utilizes a nano-organic coating, a technique that allows for surface insulation with a very thin coating without affecting the bonding electrical conductivity.

[0049] This solution also provides a packaging method for a high-temperature, high-power hybrid integrated device, which includes the following steps:

[0050] S1. Fabricating circuit module 1 with a metal casing:

[0051] 1) The ceramic strip 16 is fixed inside the metal casing 11 by soldering through the pads. The pin 14 extends into the metal casing 11, and the lower surface of its extended end is fixed to the upper surface of the ceramic strip 16 by soldering through the pads.

[0052] 2) The ceramic substrate 12 is soldered to the metal shell 11 with eutectic solder. The chip is fixedly connected in the assembly groove 13 of the ceramic substrate 12 with nano silver paste. The upper surface of the chip is flush with the upper surface of the ceramic substrate 12.

[0053] 3) Wire bonding: Using a bonding machine to bond the lead extension end to the ceramic substrate and / or chip;

[0054] When the bonding wire is used for the flow of a small current, the gold wire with an insulating layer on its surface is used as the bonding wire 17. First, the bonding machine uses a ball bonding method to bond the bonding wire 17 to the bonding area of ​​the pin. This bonding point is the first bonding point. Then, the bonding machine uses a composite bonding structure to bond the bonding wire 17 to the ceramic substrate 12 and / or the chip bonding area. This bonding point is the second bonding point. The composite bonding includes: first, a wedge bonding method is used for a first bonding, and then a ball bonding method is used for a second bonding on top of the wedge bonding.

[0055] When the bonding wire is used for high current flow, the gold-plated coarse aluminum wire serves as the bonding wire 17. First, the bonding machine bonds the bonding wire 17 to the bonding area of ​​the pin, and this bonding point serves as the first bonding point. Then, the bonding machine bonds the bonding wire 17 to the composite conductive strip surface on the ceramic substrate, and this bonding point serves as the second bonding point. The composite conductive strip consists of two conductive strips. The first conductive strip is a silver-palladium conductor, and the second conductive strip is a gold conductor. The second conductive strip covers the first conductive strip. During bonding, the gold-plated coarse aluminum wire can achieve gold-gold homogeneous bonding on the ceramic substrate surface.

[0056] 4) The open side of the metal casing 11 is sealed by laser-sealed welding of a cover plate.

[0057] S2. Apply nano silver paste to the bottom of the groove 21 of the heat storage unit box 2, and use the nano silver paste to bond the circuit module 1 into the groove 21, so that the circuit module 1 and the heat storage unit box 2 are fixedly connected.

[0058] S3. Place the heat storage unit box 2 with the filling port 24 facing upwards, and pour phase change heat storage material into the heat storage unit box 2 through the filling port 24. The phase change heat storage material enters the heat storage unit box 2 and then flows into the gap between the side wall of the groove 21 and the circuit module 1 through the guide port 23, and covers the top surface of the circuit module 1, forming the first filler 3 and the second filler 4 in sequence.

[0059] S4. The outer surface of the heat storage unit box 2 and the exposed surface of the second filler 4 are jointly covered with the heat insulation layer 6.

[0060] The above embodiments of the present invention are merely examples for clearly illustrating the present invention and are not intended to limit the implementation of the present invention. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. However, obvious variations or modifications derived from the essential spirit of the present invention still fall within the protection scope of the present invention.

Claims

1. A high-temperature, high-power hybrid integrated device, characterized in that: The device includes a circuit module (1) and a heat storage unit box (2) with an inner cavity. The top side surface of the heat storage unit box (2) is provided with a groove (21) and a filling port (24) for filling phase change heat storage material. The bottom of the groove (21) is provided with a heat conduction port (22), which is connected to the inner cavity. The bottom of the groove (21) is fixedly connected to the circuit module (1). The lower end of the circuit module (1) is covered by the heat conduction port (22). The inner cavity of the heat storage unit box (2) is provided with a first filler (3) composed of phase change heat storage material. The first filler (3) is in contact with the circuit module (1) through the heat conduction port (22) to form heat conduction. The sidewall of the groove (21) is provided with a flow port (23) communicating with the inner cavity. There is a gap between the sidewall of the groove (21) and the circuit module (1). A second filler (4) composed of phase change heat storage material is provided at the gap. The second filler (4) contacts the sidewall of the groove (21) and the sidewall of the circuit module (1) and covers the exposed surface of the circuit module (1). The second filler (4) contacts the first filler (3) through the flow port (23) to form heat conduction. The first and second fillers are integrally formed. A heat insulation layer (6) is provided on the outer surface of the heat storage unit box (2) and the exposed surface of the second filler (4); The circuit module (1) includes a metal shell (11) and a pin (14) with one end inserted into the metal shell (11). A ceramic substrate (12) is fixedly connected inside the metal shell (11). A set of assembly slots (13) is provided on the ceramic substrate (12). Each assembly slot (13) has a metallization layer at the bottom and nano silver paste on the metallization layer. The chip is bonded to the assembly slot (13) by nano silver paste. There is a gap between the chip sidewall and the assembly slot (13) wall. The gap is filled and bonded by nano silver paste. The upper surface of the chip is flush with the upper surface of the ceramic substrate (12). The protruding ends of the pins are bonded to the ceramic substrate (12) and / or the chip via bonding wires (17).

2. The high-temperature, high-power hybrid integrated device according to claim 1, characterized in that: The phase change thermal storage material is a material with a high volume enthalpy value, including high-carbon sugar alcohols or pentaerythritol.

3. The high-temperature, high-power hybrid integrated device according to claim 1, characterized in that: The bonding area of ​​the pin (14) extending into the pin is a flat structure with two planes, the upper plane being the bonding surface and the lower plane being welded and fixed to the ceramic strip (16). The ceramic strip (16) is welded inside the metal shell (11).

4. The high-temperature, high-power hybrid integrated device according to claim 3, characterized in that: When the bonding wire is used for the flow of a small current, the bonding wire (17) is a gold wire with an insulating layer on its surface. The first bonding point of the bonding wire (17) adopts a spherical bonding and is located in the bonding area of ​​the pin. The second bonding point is a composite bonding structure, which includes: a primary bonding is a wedge bonding, which is located in the bonding area of ​​the ceramic substrate (12) and / or the chip bonding area; and a secondary bonding is a spherical bonding, which is located above the wedge bonding. When the bonding wire is used for the flow of large current, the bonding wire (17) is a coarse aluminum wire with gold plating on the surface. The first bonding point is located in the bonding area of ​​the pin, and the second bonding point is located on the surface of the composite conductive strip on the ceramic substrate. The composite conductive strip consists of two conductive strips. The first conductive strip is a silver-palladium conductor, and the second conductive strip is a gold conductor. The second conductive strip covers the first conductive strip. During bonding, the gold-plated coarse aluminum wire can achieve gold-gold homogeneous bonding on the surface of the ceramic substrate.

5. The packaging method for a high-temperature, high-power hybrid integrated device according to claim 4, characterized in that, Includes the following steps: S1. Fabricate a circuit module with a metal casing (1). S2. Apply nano silver paste to the bottom of the groove (21) and sinter the circuit module (1) in the groove (21) using the nano silver paste, so that the circuit module (1) and the heat storage unit box (2) are fixedly connected. S3. Place the heat storage unit box (2) with the filling port (24) facing upwards. Fill the heat storage unit box (2) with phase change heat storage material through the filling port (24). The phase change heat storage material enters the heat storage unit box (2) and then flows into the gap between the side wall of the groove (21) and the circuit module (1) through the guide port (23) and covers the top surface of the circuit module (1), forming the first filler (3) and the second filler (4) in sequence. S4. A heat insulation layer (6) is jointly covered on the outer surface of the heat storage unit box (2) and the exposed side of the second filler (4).

6. The packaging method for a high-temperature, high-power hybrid integrated device according to claim 5, characterized in that, Step S1 includes: 1) Weld and fix ceramic strip (16) inside metal shell (11), with pins extending into the interior of metal shell (11), and the lower surface of the flat structure of the extended end is welded and fixed to ceramic strip (16); 2) The ceramic substrate (12) is welded inside the metal shell (11), and the chip is fixedly connected in the assembly groove (13) of the ceramic substrate (12). The upper surface of the chip is flush with the upper surface of the ceramic substrate (12). Nano silver paste is coated on the metallization layer at the bottom of the assembly groove (13), and the chip is bonded to the assembly groove (13) by the nano silver paste. The gap between the groove wall and the chip is filled with nano silver paste to form an adhesive, and the nano silver paste is flush with the chip surface. 3) Wire bonding: Using a bonding machine to bond the lead extension end to the ceramic substrate and / or chip; When the bonding wire is used for the flow of a small current, the gold wire with an insulating layer on its surface is used as the bonding wire (17). First, the bonding machine uses a ball bonding method to bond the bonding wire (17) to the bonding area of ​​the pin. This bonding point is the first bonding point. Then, the bonding machine uses a composite bonding structure to bond the bonding wire (17) to the ceramic substrate (12) and / or the chip bonding area. This bonding point is the second bonding point. The composite bonding includes: first, a wedge bonding method is used for a first bonding, and then a ball bonding method is used for a second bonding above the wedge bonding. When the bonding wire is used for high current flow, the gold-plated coarse aluminum wire is used as the bonding wire (17). First, the bonding machine bonds the bonding wire (17) to the bonding area of ​​the pin. This bonding point is used as the first bonding point. Then, the bonding machine bonds the bonding wire (17) to the composite conductive strip surface on the ceramic substrate. This bonding point is used as the second bonding point. The composite conductive strip consists of two conductive strips. The first conductive strip is a silver-palladium conductor, and the second conductive strip is a gold conductor. The second conductive strip covers the first conductive strip. During bonding, the gold-plated coarse aluminum wire can achieve gold-gold homogeneous bonding on the ceramic substrate surface. 4) The open side of the metal shell (11) is sealed by a welded cover plate (15).

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