Electronic modulation device

Abstract

The present invention provides an electronic modulation device, which includes a substrate, a buffer layer, and an electrode. The buffer layer is disposed on the substrate, and the buffer layer includes a first opening that defines a first top edge and a first bottom edge of the buffer layer. The electrode is disposed on the buffer layer, and the electrode includes a second opening that defines a second top edge and a second bottom edge of the electrode. Wherein, in the cross-sectional direction, there is a distance between the second bottom edge and the first top edge, and the range of the distance is between 1 micron and 50 microns.

Description

[0001] This is a divisional application of a Chinese patent application with the filing date of January 22, 2020 and the application number of "202010074359.9". Technical Field

[0002] The present invention relates to an electronic modulation device, and more particularly to an organic insulating layer of the electronic modulation device. Background Art

[0003] Electronic products including display panels, such as smart phones, tablet computers, notebook computers, monitors, and televisions, have become indispensable necessities in modern society. With the booming development of such portable electronic products, consumers have high expectations for the quality, functions, or prices of these products. Some of these electronic products have communication capabilities, which depend on operating a modulation structure (e.g., an antenna) to achieve such communication capabilities.

[0004] Although existing electronic modulation devices can generally meet their originally intended uses, they still do not fully meet the requirements in all aspects. For example, dielectric loss caused by insulators in electronic modulation devices is a problem. Therefore, there are still problems to be solved in the current technology of electronic devices. Summary of the Invention

[0005] According to some embodiments of the present invention, there is provided an electronic modulation device, which includes a substrate, a buffer layer, and an electrode. The buffer layer is disposed on the substrate, and the buffer layer includes a first opening, and the first opening defines a first top edge and a first bottom edge of the buffer layer. The electrode is disposed on the buffer layer, and the electrode includes a second opening, and the second opening defines a second top edge and a second bottom edge of the electrode. Wherein, in the sectional direction, there is a distance between the second bottom edge and the first top edge, and the range of the distance is between 1 micrometer and 50 micrometers. Brief Description of the Drawings

[0006] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention is provided in conjunction with the accompanying drawings, wherein:

[0007] Figure 1A Showing a schematic cross-sectional structure diagram of an electronic modulation device according to some embodiments of the present invention;

[0008] Figure 1B Showing according to some embodiments of the present invention, Figure 1A An enlarged schematic diagram of area A in

[0009] Figure 1C Showing according to some embodiments of the present invention, Figure 1A A top view schematic diagram of area A in

[0010] Figure 2A Showing a schematic cross-sectional structure diagram of an electronic modulation device according to some embodiments of the present invention;

[0011] Figure 2B Showing according to some embodiments of the present invention, Figure 2A An enlarged schematic diagram of region C in;

[0012] Figure 2C Showing according to some embodiments of the present invention, Figure 2A A top view schematic diagram of region C in;

[0013] Figures 3A - 3H A top view schematic diagram of the opening of the first electrode according to some embodiments of the present invention;

[0014] Figures 4A - 4G Showing a schematic cross-sectional structure diagram of a part of an electronic modulation device according to some embodiments of the present invention;

[0015] Figures 5A - 5F Showing a schematic cross-sectional structure diagram of a part of an electronic modulation device according to some embodiments of the present invention;

[0016] Figures 6A - 6F Showing according to some embodiments of the present invention, during manufacturing Figure 1A An enlarged schematic diagram of region A in;

[0017] Figures 7A - 7F Showing according to some embodiments of the present invention, during manufacturing Figure 1A An enlarged schematic diagram of region A in;

[0018] Figures 8A - 8D Showing according to some embodiments of the present invention, during manufacturing Figure 2A An enlarged schematic diagram of region C in;

[0019] Figures 9A - 9D Showing according to some embodiments of the present invention, during manufacturing Figure 2A An enlarged schematic diagram of region C in.

[0020] Symbol Explanation

[0021] 10 Electronic modulation device;

[0022] 20 Electronic modulation device;

[0023] 102 First substrate;

[0024] 102A Top surface;

[0025] 104 Second substrate;

[0026] 104A surface;

[0027] 104B surface;

[0028] 106 modulation material;

[0029] 108 buffer layer;

[0030] 108a first top edge;

[0031] 108b first bottom edge;

[0032] 108c central part;

[0033] 108s inner side;

[0034] 108S1 top surface;

[0035] 108S2 bottom surface;

[0036] 108p first opening;

[0037] 110 first electrode;

[0038] 110a second top edge;

[0039] 110b second bottom edge;

[0040] 110c central part;

[0041] 110p second opening;

[0042] 110s inner side;

[0043] 110S1 top surface;

[0044] 110S2 bottom surface;

[0045] 112 organic insulating layer;

[0046] 112r recessed part;

[0047] 112t protruding part;

[0048] 114 second electrode;

[0049] 114p opening;

[0050] 116 support element;

[0051] 202 photomask;

[0052] 202’ photomask;

[0053] 204 photoresist layer;

[0054] 204’ remaining photoresist layer;

[0055] Region A;

[0056] Region B;

[0057] Region C;

[0058] CT Geometric Center;

[0059] d1 First Width;

[0060] d2 Second Width;

[0061] d3 Distance;

[0062] Region D;

[0063] Region E;

[0064] Line Segment I-I';

[0065] r Radius;

[0066] SQ Minimum Rectangle;

[0067] T1 First Thickness;

[0068] T2 Second Thickness;

[0069] T3 Third Thickness;

[0070] T3' Third Thickness;

[0071] T4 Fourth Thickness;

[0072] T5 Fifth Thickness;

[0073] T6 Sixth Thickness;

[0074] T6' Sixth Thickness;

[0075] T7 Seventh Thickness;

[0076] T8 Eighth Thickness;

[0077] Line Segment T-T';

[0078] W Electromagnetic Wave. Detailed Implementation Manner

[0079] The following provides a detailed description of the electronic modulation device and the manufacturing method of the electronic modulation device according to the embodiments of the present invention. It should be understood that the following description provides many different embodiments or examples for implementing different forms of some embodiments of the present invention. The specific elements and arrangements described below are only for simply and clearly describing some embodiments of the present invention. However, it is clear that the exemplary embodiments described herein are only for illustrative purposes, and the concepts of the present invention can be embodied in various forms and are not limited to those exemplary embodiments. In addition, similar and / or corresponding reference numerals may be used in different embodiments to label similar and / or corresponding elements to clearly describe the present invention. However, the use of these similar and / or corresponding reference numerals is only for simply and clearly describing some embodiments of the present invention and does not represent any association between the different embodiments and / or structures discussed.

[0080] It should be understood that the exemplary embodiments of the present invention can be understood in conjunction with the accompanying drawings, and the accompanying drawings of the present invention are also regarded as a part of the complete description of the invention. The accompanying drawings of the present invention are not drawn to scale. In addition, the dimensions of the elements may be arbitrarily enlarged or reduced to clearly show the features of the present invention.

[0081] It should be understood that the elements or devices in the drawings may exist in various forms well-known to those skilled in the art to which the present invention pertains. In addition, "a layer on another layer", "a layer disposed above another layer", "a layer disposed on another layer", and "a layer disposed on the upper of another layer" may mean that one layer is in direct contact with another layer, or one layer is not in direct contact with another layer, and there are one or more intermediate layers between one layer and another layer.

[0082] In addition, in this article, relative terms such as "lower", "bottom", "higher", or "top" may be used to describe the relative relationship of a component in the drawing to another component. It can be understood that if the device in the drawing is flipped upside down, the component described on the "lower" side will become the component on the "higher" side.

[0083] It should be understood that although terms such as "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, parts, and / or sections, these elements, components, regions, layers, parts, and / or sections should not be limited by these terms. These terms are only used to distinguish different elements, components, regions, layers, parts, or sections. Therefore, a first element, component, region, layer, part, or section discussed below may be referred to as a second element, component, region, layer, part, or section without departing from the disclosure of the present invention.

[0084] In this text, the terms "about" and "substantially" generally mean within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The given quantity is an approximate quantity, that is, the meaning of "about" or "substantially" can still be implied even without specifically stating "about" or "substantially".

[0085] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present invention pertains. It is understood that these terms, such as those defined in a commonly used dictionary, should be interpreted to have a meaning consistent with the relevant technology and the background or context of the present invention, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of the present invention.

[0086] In addition, in some embodiments of the present invention, for terms related to joining and connection, such as "connect", "interconnect", etc., unless specifically defined, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact, where other structures are provided between these two structures, and these terms related to joining and connection may also include the cases where both structures can move, or both structures are fixed.

[0087] In addition, the term "ranging from a first value to a second value" or "the range is from a first value to a second value" means that the range includes the first value, the second value, and other values therebetween.

[0088] According to some embodiments of the present invention, an electronic modulation device is provided. The electronic modulation device may include an organic insulating layer having different thicknesses according to different positions, and the thickness of the organic insulating layer can be controlled to reduce the dielectric loss of electromagnetic waves or reduce the amount of metal ions diffused into the modulation material.

[0089] Figure 1A FIG. shows a schematic cross-sectional structure diagram of the electronic modulation device 10 in some embodiments of the present invention. It should be understood that according to some embodiments, additional features may be added to the electronic modulation device 10 described below. According to other embodiments, some features of the electronic modulation device 10 described below may be replaced or omitted. In addition, it should be understood that only a part of the electronic modulation device 10 (for example, a part of the working area) is shown in the figure, and the electronic modulation device 10 may include other structures (for example, non-working areas) according to requirements. In some embodiments, the electronic modulation device 10 can be used as an antenna, a smart phone, a tablet computer, a laptop computer, a display, a television, and / or other applicable electronic modulation devices to receive and / or transmit electromagnetic waves. In some examples, certain components may be added or deleted in some applications.

[0090] Please refer toFigure 1A Specifically, the electronic modulation device 10 may include a first substrate 102, a second substrate 104, and a modulation material 106. The second substrate 104 may be disposed opposite to the first substrate 102. The modulation material 106 may be disposed between the first substrate 102 and the second substrate 104. Specifically, the modulation material 106 may at least partially fill the space between the first substrate 102 and the second substrate 104. In some examples, the aforementioned space may be formed by at least one sealant (not shown) disposed between the first substrate 102 and the second substrate 104. The modulation material 106 may be a material whose properties (such as dielectric constant) can be adjusted by applying an electric field or other methods. In some embodiments, the modulation material 106 may be used to control the transmission of the electromagnetic wave W (as indicated by the arrow), but is not limited thereto.

[0091] In some embodiments, the materials of the first substrate 102 and the second substrate 104 may include glass, quartz, sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubber, glass fiber, ceramic, other suitable materials, or a combination of the foregoing, but are not limited thereto. In some embodiments, the first substrate 102 and the second substrate 104 may be flexible substrates, rigid substrates, or a combination of the foregoing. In some embodiments, the material of the first substrate 102 may be the same as or different from the material of the second substrate 104. In some embodiments, the modulation material 106 may include liquid crystal molecules, but is not limited thereto.

[0092] In addition, the electronic modulation device 10 may include a buffer layer 108 disposed on the first substrate 102, and the buffer layer 108 may be disposed between the first substrate 102 and the first electrode 110. In some embodiments, the expansion coefficients of the first substrate 102 and the first electrode 110 may be substantially the same through the intermediate buffer layer 108, reducing the warpage of the first substrate 102. In some embodiments, the buffer layer 108 may include a first opening 108p, and the first opening 108p may define a first top edge 108a and a first bottom edge 108b of the buffer layer 108 (as Figure 1B shown). The buffer layer 108 may include a top surface 108S1 and a bottom surface 108S2. Specifically, the first top edge 108a refers to the highest point of the edge of the top surface 108S1 of the buffer layer 108 in the cross-sectional structure.

[0093] In some embodiments, the material of the buffer layer 108 may include an organic insulating material, an inorganic insulating material, a metallic material, other suitable materials, or a combination of the foregoing, but is not limited thereto. The foregoing organic insulating material may include acrylic or methacrylic organic compounds, isoprene, phenol-formaldehyde resin, benzocyclobutene (BCB), perfluorocyclobutane (PECB), polyimide, polyethylene terephthalate, or a combination of the foregoing, but is not limited thereto. The foregoing inorganic insulating material may include silicon nitride, silicon oxide, silicon oxynitride, or a combination of the foregoing, but is not limited thereto. The foregoing metallic material may include titanium, molybdenum, tungsten, nickel, aluminum, gold, chromium, platinum, silver, copper, titanium alloy, molybdenum alloy, tungsten alloy, nickel alloy, aluminum alloy, gold alloy, chromium alloy, platinum alloy, silver alloy, copper alloy, other suitable materials, or a combination of the foregoing, but is not limited thereto.

[0094] Please refer to Figure 1A , the electronic modulation device 10 may include a first electrode 110 disposed on the buffer layer 108, and the first electrode 110 may be disposed between the first substrate 102 and the second substrate 104. The first electrode 110 may include a second opening 110p, and the second opening 110p may define a second top edge 110a and a second bottom edge 110b of the first electrode 110 (as Figure 1B shown). The first electrode 110 may include a top surface 110S1 and a bottom surface 110S2. Specifically, the second top edge 110a refers to the highest point of the edge of the top surface 110S1 of the first electrode 110 in the cross-sectional structure. In some embodiments, compared with the first top edge 108a of the buffer layer 108, the second bottom edge 110b of the first electrode 110 may be disposed away from the first opening 108p.

[0095] In some embodiments, the first electrode 110 may include a conductive material. In some embodiments, the material of the first electrode 110 may include gold, copper, silver, tin, aluminum, molybdenum, tungsten, chromium, nickel, platinum, gold alloy, copper alloy, silver alloy, tin alloy, aluminum alloy, molybdenum alloy, tungsten alloy, chromium alloy, nickel alloy, platinum alloy, other suitable conductive materials, or a combination of the foregoing, but is not limited thereto. In addition, in some embodiments, the material of the first electrode 110 may be different from the material of the buffer layer 108.

[0096] In addition, the electronic modulation device 10 may include an organic insulating layer 112 disposed on the first electrode 110 and within the first opening 108p and the second opening 110p. The organic insulating layer 112 may be disposed between the first electrode 110 and the modulation material 106. In some embodiments, the organic insulating layer 112 may cover and be in contact with the buffer layer 108 and the first electrode 110. In some embodiments, the organic insulating layer 112 may serve as an alignment layer for the modulation material 106.

[0097] Specifically, the organic insulating layer 112 may have different thicknesses within the first opening 108p and the second opening 110p to reduce the dielectric loss of electromagnetic waves or to reduce the diffusion of metal ions into the modulation material. The configuration of the organic insulating layer 112, the buffer layer 108, and the first electrode 110 will be Figure 1B described in detail in

[0098] In some embodiments, the material of the organic insulating layer 112 may include a polymer (e.g., polyimide), a phenone-based insulating material, other suitable organic insulating materials, or a combination of the foregoing, but is not limited thereto. For example, the phenone-based insulating material may include benzophenone, tetracarboxylic dianhydride (BTDA), or phenol formaldehyde resin (PF resin), but is not limited thereto. In addition, in some other embodiments, an inorganic insulating layer may be used to replace the organic insulating layer 112.

[0099] Furthermore, the electronic modulation device 10 may further include a second electrode 114 disposed between the modulation material 106 and the second substrate 104. In some embodiments, the second electrode 114 may overlap with the first opening 108p and the second opening 110p. As Figure 1A shown, according to some embodiments, the second electrode 114 may include an opening 114p.

[0100] Furthermore, the organic insulating layer 112 may also be disposed on the second electrode 114. In some embodiments, the buffer layer 108 may also be disposed between the second electrode 114 and the second substrate 104. In addition, according to some embodiments, the region B shown in the figure may have a configuration similar to that of the region A (e.g., the thickness of the organic insulating layer 112).

[0101] In addition, the first electrode 110 and / or the second electrode 114 may each be electrically connected to a functional circuit (not shown). For example, the functional circuit may include active components (e.g., thin-film transistors (TFTs) and / or chips) or passive components. In some embodiments, the functional circuit may be disposed on the surface 104B of the second substrate 104 where the second electrode 114 is provided. In other embodiments, the functional circuit may be disposed on the surface 104A of the second substrate 104, the surface 104A being opposite to the surface 104B, and the second electrode 114 may be electrically connected to the functional circuit. In some examples, the second electrode 114 may be electrically connected to the functional circuit through a via hole (not shown) penetrating the second substrate 104. In some embodiments, the active components may be integrated with the circuits of a gate on array (GOP) structure. In some embodiments, the passive components may be controlled by an IC or a microchip disposed inside or outside the electronic modulation device 10.

[0102] Continuing with the foregoing, according to some embodiments, the second electrode 114 may include an opening 114p. More specifically, according to some embodiments, the second electrode 114 may be a patterned electrode having several portions. In some embodiments, the several portions of the second electrode 114 may be connected to different circuits.

[0103] According to some embodiments, the electronic modulation device 10 may further include a support element 116 disposed between the first substrate 102 and the second substrate 104. In some embodiments, the support element 116 may be disposed between the first electrode 110 and the second electrode 114. The support element 116 provides structural stability for the electronic modulation device 10. In some examples, the support element 116 may be formed on the first substrate 102 or the second substrate 104, but is not limited thereto, and the organic insulating layer 112 may be formed on the support element 116, the first substrate 102, and / or the second substrate 104.

[0104] In some embodiments, the material of the support element 116 may include a dielectric material, a metal material, an organic material, or a combination of the foregoing, but is not limited thereto. In some embodiments, the dielectric material may include silicon oxide, silicon nitride, silicon oxynitride, other high-k dielectric materials, or a combination of the foregoing, but is not limited thereto. In some embodiments, the metal material may include copper, silver, gold, copper alloy, silver alloy, gold alloy, other suitable metal materials, or a combination of the foregoing, but is not limited thereto. In some embodiments, the organic material may include polyimide, epoxy resin, acrylic resin (e.g., polymethylmetacrylate (PMMA)), benzocyclobutene, polyester, polydimethylsiloxane (PDMS), polytetrafluoroethylene (PTFE), or a combination of the foregoing, but is not limited thereto.

[0105] In addition, in some embodiments, the support element 116 may include a sealant, a photospacer, a liquid crystal polymer (LCP) layer, or a combination of the foregoing, but is not limited thereto. In some embodiments, the support element 116 may include a photo-curing or thermal curing sealant. For example, the support element 116 may include a photo-curing sealant (UV light or visible light), a thermal curing sealant, or a photothermal curing sealant.

[0106] Next, please refer to Figure 1B , Figure 1B which shows an enlarged schematic view of region A in some embodiments of the present invention. As described above, the organic insulating layer 112 may have different thicknesses within the first opening 108p and the second opening 110p. It should be understood that the thickness of the organic insulating layer 112 described herein refers to the thickness measured in the normal direction of the first substrate 102 (e.g., the Z direction shown in Figure 1A ). More specifically, in some examples, the cross-sectional structure image of the organic insulating layer 112 may be obtained by using a scanning electron microscope (SEM), and then the thickness of the organic insulating layer 112 may be measured based on this cross-sectional structure image. Figure 1B

[0107] ​The organic insulating layer 112 located at the first top edge 108a of the buffer layer 108 may have a first thickness T1, and the organic insulating layer 112 located at the first bottom edge 108b of the buffer layer 108 may have a second thickness T2. In addition, the organic insulating layer 112 located at the second top edge 110a of the first electrode 110 may have a third thickness T3, and the organic insulating layer 112 located at the second bottom edge 110b of the first electrode 110 may have a fourth thickness T4.

[0108] In some embodiments, the fourth thickness T4 of the organic insulating layer 112 located at the second bottom edge 110b may be greater than the first thickness T1 of the organic insulating layer 112 located at the first top edge 108a. In some embodiments, the ratio of the first thickness T1 of the organic insulating layer 112 to the fourth thickness T4 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.4, for example, 0.35, 0.30, 0.25, or 0.2. The organic insulating layer 112 having a thinner thickness (e.g., the first thickness T1) at the first top edge 108a may less affect the performance of the electromagnetic wave because it can reduce the dielectric loss caused by the organic insulating layer 112. On the other hand, the organic insulating layer 112 having a thicker thickness (e.g., the fourth thickness T4) at the second bottom edge 110b may reduce the amount of metal ions of the first electrode 110 diffusing into the modulation material 106.

[0109] In some embodiments, the fourth thickness T4 of the organic insulating layer 112 located at the second bottom edge 110b may be greater than the third thickness T3 of the organic insulating layer 112 located at the second top edge 110a. In some embodiments, the ratio of the third thickness T3 of the organic insulating layer 112 to the fourth thickness T4 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.4, such as 0.35, 0.30, 0.25, or 0.2.

[0110] Furthermore, in some embodiments, the thickness of the organic insulating layer 112 on the top surface 110S1 of the first electrode 110 may be uniform. In other embodiments, the organic insulating layer 112 may have a third thickness T3' on the top surface 110S1 other than the second top edge 110a. In some embodiments, the third thickness T3' may be greater than or less than the third thickness T3 of the organic insulating layer 112 located at the second top edge 110a.

[0111] The third thickness T3 located at the second top edge 110a may be less than the fourth thickness T4 located at the second bottom edge 110b or the third thickness T3' on the top surface 110S1, and thus can reduce the consumption of the electric field strength at the second top edge 110a.

[0112] In some embodiments, the first opening 108p may include a central portion 108c, where the central portion 108c refers to a region formed by extending a specific distance from the geometric center CT of the first opening 108p (e.g., as shown in Figure 1C ). In other words, the central portion 108c may be a circular region with a specific radius, and the circular region surrounds the geometric center CT of the first opening 108p. The definition of the central portion 108c in various embodiments will be further described in Figure 3A .

[0113] In addition, the organic insulating layer 112 located at the central portion 108c of the first opening 108p may have a fifth thickness T5. In some examples, the fifth thickness T5 may be the minimum thickness of the organic insulating layer 112 located at the central portion 108c of the first opening 108p. In some embodiments, the second thickness T2 of the organic insulating layer 112 located at the first bottom edge 108b may be greater than the fifth thickness T5 of the organic insulating layer 112 located at the central portion 108c. In some embodiments, the ratio of the fifth thickness T5 to the second thickness T2 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.3, e.g., 0.25, 0.2, 0.15, or 0.10.

[0114] Furthermore, as shown in Figure 1B , the thickness of the organic insulating layer 112 within the first opening 108p may gradually decrease towards the central portion 108c. As described above, the organic insulating layer 112 having a thinner thickness (e.g., the fifth thickness T5) at the central portion 108c may reduce the dielectric loss caused by the organic insulating layer 112 (i.e., the amount of the organic insulating layer 112 through which the electromagnetic wave needs to pass).

[0115] In addition, in some embodiments, the second thickness T2 of the organic insulating layer 112 located at the first bottom edge 108b may be greater than the first thickness T1 of the organic insulating layer 112 located at the first top edge 108a. In some embodiments, the ratio of the first thickness T1 to the second thickness T2 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.3, e.g., 0.25, 0.2, 0.15, or 0.10. The second thickness T2 located at the first bottom edge 108b may be less than the first thickness T1 located at the first top edge 108a, which may reduce the consumption of the electric field strength at the second top edge 110a.

[0116] In addition, the first opening 108p may have a first width d1, and the second opening 110p may have a second width d2. In some embodiments, the second width d2 may be greater than the first width d1. According to some embodiments, the width of the opening may be the distance between two points on the bottom edge (e.g., the first bottom edge 108b) in the cross-sectional structure. In addition, the width of the opening may be the maximum distance of the first opening 108p or the second opening 110p in a plane (e.g., the X-Y plane) substantially perpendicular to the normal direction of the first substrate 102, e.g., as Figure 1C shown.

[0117] In some embodiments, the distance d3 between the second bottom edge 110b and the first top edge 108a may range from 0 micrometers (μm) to 50 micrometers (μm) (0 μm ≤ d3 ≤ 50 μm), e.g., from 1 μm to 10 μm (1 μm ≤ d3 ≤ 10 μm), or from 1 μm to 5 μm (1 μm ≤ d3 ≤ 5 μm). It should be understood that if the distance d3 between the second bottom edge 110b and the first top edge 108a is too small, the expansion coefficients of the first substrate 102 and the first electrode 110 may be substantially different. On the other hand, if the distance d3 between the second bottom edge 110b of the second opening 110p and the first top edge 108a of the first opening 108p is too large, the dielectric loss caused by the buffer layer 108 may increase.

[0118] Next, please refer to Figure 1C , Figure 1C which shows a top view schematic diagram of region A in some embodiments of the present invention. Furthermore, Figure 1A the cross-sectional structure diagram of the electronic modulation device 10 shown in Figure 1B is a view taken along the line I-I' shown in Figure 1C . It should be noted that for clarity of illustration, Figure 1C the organic insulating layer 112 is omitted in

[0119] As Figure 1C shown, in some embodiments, the region of the first opening 108p may be defined by the first bottom edge 108b, and the region of the second opening 110p may be defined by the second bottom edge 110b, but the present invention is not limited thereto. In some embodiments, in a top view perspective, the region of the second opening 110p may be larger than the region of the first opening 108p. Furthermore, in some embodiments, the radius r of the central portion 108c may be greater than 0 and less than or equal to 50 micrometers, e.g., less than or equal to 30 micrometers, 20 micrometers, or 10 micrometers.

[0120] Next, please refer to Figure 2A , Figure 2AFIG. shows a schematic cross-sectional structure of an electronic modulation device 20 according to other embodiments of the present invention. It should be understood that the same or similar components or elements as those in the foregoing will be denoted by the same or similar reference numerals, and their materials, manufacturing methods, and functions are the same or similar to those described above, so this part will not be described in detail hereinafter. The electronic modulation device 20 is similar to Figure 1A the electronic modulation device 10 shown. The difference between them is that the electronic modulation device 20 may not include the buffer layer 108 having the opening 108p. As Figure 2A shown, the electronic modulation device 20 may include a first electrode 110 disposed on the first substrate 102. In some embodiments, the first electrode 110 may be in contact with the first substrate 102. In some embodiments, the first substrate 102 may have a multi-layer structure. For example, the first substrate 102 may include a buffer layer (not shown). According to some embodiments, the buffer layer may be in contact with the first electrode 110, and the buffer layer may be patterned or unpatterned. In other examples, the first substrate 102 may include a buffer layer that is not in contact with the first electrode 110. More specifically, according to some embodiments, the first substrate 102 may include an unpatterned buffer layer.

[0121] The first electrode 110 may include a second opening 110p, and the second opening 110p may define a second top edge 110a and a second bottom edge 110b of the first electrode 110 (as Figure 2B shown). In some embodiments, the second electrode 114 may overlap with the second opening 110p.

[0122] Furthermore, the electronic modulation device 20 may include an organic insulating layer 112 disposed on the first electrode 110 and within the second opening 110p. In some embodiments, the organic insulating layer 112 may cover and be in contact with the first electrode 110. In particular, the organic insulating layer 112 may have different thicknesses within the second opening 110p to reduce the dielectric loss of electromagnetic waves or the diffusion of metal ions into the modulation material.

[0123] In addition, according to some embodiments, the second electrode 114 may include an opening 114p. It should be understood that, according to some embodiments, the opening 114p (the region D shown in the figure) may have a configuration similar to that of the region C (for example, a similar thickness of the organic insulating layer 112).

[0124] Please refer to Figure 2B , Figure 2B which shows, according to some embodiments of the present invention, Figure 2AAn enlarged schematic view of region C in []. The organic insulating layer 112 located at the second top edge 110a of the first electrode 110 may have a sixth thickness T6, and the organic insulating layer 112 located at the second bottom edge 110b of the first electrode 110 may have a seventh thickness T7.

[0125] In some embodiments, the seventh thickness T7 of the organic insulating layer 112 located at the second bottom edge 110b may be greater than the sixth thickness T6 of the organic insulating layer 112 located at the second top edge 110a. In some embodiments, the ratio of the sixth thickness T6 of the organic insulating layer 112 to the seventh thickness T7 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.4. For example, 0.35, 0.30, 0.25, or 0.2.

[0126] In addition, the thickness of the organic insulating layer 112 on the top surface 110S1 of the first electrode 110 may be uniform. In some embodiments, the organic insulating layer 112 has a sixth thickness T6' on the top surface 110S1 other than the second top edge 110a. In some embodiments, the sixth thickness T6' may be greater than or less than the sixth thickness T6 of the organic insulating layer 112 located at the second top edge 110a.

[0127] The sixth thickness T6 located at the second top edge 110a may be less than the seventh thickness T7 located at the second bottom edge 110b or the sixth thickness T6' on the top surface 110S1, so as to reduce the consumption of the electric field strength at the second top edge 110a.

[0128] In addition, the second opening 110p may include a central portion 110c. The organic insulating layer 112 located at the central portion 110c of the second opening 110p may have an eighth thickness T8. In some embodiments, the seventh thickness T7 of the organic insulating layer 112 located at the second bottom edge 110b may be greater than the eighth thickness T8 of the organic insulating layer 112 located at the central portion 110c. In some embodiments, the ratio of the eighth thickness T8 of the organic insulating layer 112 to the seventh thickness T7 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.3. For example, 0.25, 0.2, 0.15, or 0.10.

[0129] As Figure 2B shown, the thickness of the organic insulating layer 112 within the second opening 110p may gradually decrease towards the central portion 110c. As described above, the organic insulating layer 112 having a relatively thin thickness (e.g., the eighth thickness T8) at the central portion 110c may reduce the dielectric loss of the electromagnetic wave caused by the organic insulating layer 112.

[0130] Next, please refer to Figure 2C , Figure 2C showing, in some embodiments according to the present invention,Figure 2A A top view schematic diagram of region C in Figure 2B The cross-sectional structure diagram of the electronic modulation device 20 shown is a view taken along the Figure 2C line segment T-T' shown in Figure 2C The organic insulating layer 112 is omitted for clarity of illustration.

[0131] As Figure 2C shown, the region of the second opening 110p can be defined by the second bottom edge 110b. In some embodiments, the radius r of the central portion 110c can be greater than 0 and less than or equal to 50 microns, for example, less than or equal to 30 microns, 20 microns, or 10 microns.

[0132] Next, please refer to Figures 3A - 3H , Figures 3A - 3H A top view schematic diagram showing the first opening 108p of the first electrode 108 in some embodiments of the present invention. As Figures 3A - 3H shown, the first opening 108p can be patterned to have various shapes. In some embodiments, the first opening 108p can be a rectangular shape (as Figure 3A shown), a square shape (as Figure 3B shown), a triangular shape (as Figure 3C shown), a pentagon, a hexagon (as Figure 3D shown), a heptagon, an octagon, a circular shape (as Figure 3E shown), an oval shape (as Figure 3F shown), an irregular shape (as Figure 3G shown), an annular shape (as Figure 3H shown), other suitable shapes, but not limited thereto.

[0133] In addition, as Figure 3A and Figure 3B shown, according to some embodiments, the geometric center CT of the first opening 108p having a rectangular shape or a square shape can be the intersection of the two diagonals. In other embodiments, as Figures 3C - 3H shown, for the first opening 108p having a shape other than a rectangle or a square, the geometric center CT of the first opening 108p can be the intersection of the two diagonals of the smallest rectangle SQ (or square) that can enclose the first opening 108p.

[0134] The central portion 108c refers to a region formed by extending a specific distance (radius r) from the geometric center CT of the first opening 108p. In other words, the central portion 108c can be a circular region with a specific radius r, and this circular region surrounds the geometric center CT of the first opening 108p. In some embodiments, the radius r of the central portion 108c can be greater than 0 and less than or equal to 50 micrometers, for example, less than or equal to 30 micrometers, 20 micrometers, or 10 micrometers.

[0135] It should be noted that, according to some embodiments, the second opening 110p can also have a structure similar to that of the aforementioned first opening 108p. In addition, the geometric center CT of the second opening 110p and the central portion 110c can be defined in the same manner as described above.

[0136] Next, please refer to Figures 4A - 4G , Figures 4A - 4G FIG. shows a schematic cross-sectional structure of a part (e.g., Figure 1B the region E shown) of the electronic modulation device 10 according to some embodiments of the present invention. As Figures 4A - 4G shown, according to different embodiments, the organic insulating layer 112 can have different profiles.

[0137] For example, the organic insulating layer 112 disposed within the first opening 108p or the second opening 110p can protrude towards the geometric center CT of the first opening 108p or the second opening 110p. In some embodiments, the organic insulating layer 112 can include a protruding portion 112t and a recessed portion 112r. In some embodiments, the protruding portion 112t can have a rounded shape, a flat shape, a curved shape, other suitable shapes, or a combination of the foregoing. In some embodiments, the organic insulating layer 112 on the first substrate 102 can have a wave shape. Furthermore, the slope of the organic insulating layer 112 can vary with the profiles of the first electrode 110, the buffer layer 108, or the first substrate 102.

[0138] Next, please refer to Figures 5A - 5F , Figures 5A - 5F FIG. shows a schematic cross-sectional structure of a part (e.g., Figure 1B the region E shown) of the electronic modulation device 10 according to some embodiments of the present invention. As Figures 5A - 5F shown, according to different embodiments, the first electrode 110 and the buffer layer 108 can have different profiles.

[0139] For example, as Figures 5A - 5CAs shown, according to some embodiments, the inner side surface 110s of the first electrode 110 may have a bent shape, a recessed shape, a wavy shape, other suitable shapes, or a combination of the foregoing. The inner side 110s of the first electrode 110 may be the side wall of the first electrode 110 adjacent to the second opening 110p.

[0140] In addition, as Figures 5D - 5F shown, according to some embodiments, the inner side surface 108s of the buffer layer 108 may have a bent shape, a recessed shape, a wavy shape, other suitable shapes, or a combination of the foregoing.

[0141] Next, please refer to Figures 6A - 6F , Figures 6A - 6F which shows an enlarged schematic view of region A in the process of manufacturing the electronic modulation device 10 according to some embodiments of the present invention. It should be understood that additional operations may be provided before, during, and / or after the process of manufacturing the electronic modulation device 10. In some embodiments, some of the described stages may be replaced or deleted. In some embodiments, the order of operations may be interchanged. Figure 1A

[0142] Please refer to Figure 6A , a first substrate 102 is provided. The buffer layer 108 and the first electrode 110 may be sequentially formed on the first substrate 102. The first electrode 110 may be patterned to form a second opening 110p. The second opening 110p may expose a part of the top surface 108S1 of the buffer layer 108.

[0143] In some embodiments, the buffer layer 108 may be formed by using a chemical vapor deposition (CVD) process, a spin coating process, a printing process, or a combination of the foregoing. The aforementioned chemical vapor deposition process may include a low-pressure chemical vapor deposition (LPCVD) process, a low-temperature chemical vapor deposition (LTCVD) process, a rapid thermal chemical vapor deposition (RTCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, or an atomic layer deposition (ALD) process, but is not limited thereto.

[0144] ​In some embodiments, the first electrode 110 may be formed by using a chemical vapor deposition process, a physical vapor deposition process, an electroplating process, an electroless plating process, other suitable processes, or a combination of the foregoing. The physical vapor deposition process may include a sputtering process, an evaporation process, a pulsed laser deposition process, etc., but is not limited thereto. In addition, in some embodiments, the second opening 110p may be formed by one or more photolithography processes and an etching process. In some embodiments, the foregoing photolithography process may include photoresist coating (e.g., spin coating), soft baking, hard baking, mask aligning, exposure, post-exposure baking, photoresist developing, cleaning, drying, or other suitable processes. In some embodiments, the above etching process includes a dry etching process or a wet etching process.

[0145] Next, please refer to Figure 6B , the buffer layer 108 may be patterned to form a first opening 108p. The first opening 108p may expose a part of the top surface 102A of the first substrate 102. Furthermore, the first opening 108p may be formed by one or more photolithography processes and an etching process as described above.

[0146] Next, please refer to Figure 6C , an organic insulating layer 112 may be formed on the first electrode 110 and within the first opening 108p and the second opening 110p. In some embodiments, the organic insulating layer 112 may be formed on the first electrode 110, the buffer layer 108, and the first substrate 102.

[0147] In some embodiments, the organic insulating layer 112 may be formed by using a chemical vapor deposition process, a spin coating process, a printing process, or a combination of the foregoing.

[0148] Next, refer to Figure 6D and Figure 6E, the organic insulating layer 112 may be patterned by a photolithography process. As described above, the photolithography process may include photoresist coating (e.g., spin coating), soft baking, hard baking, photomask alignment, exposure, post-exposure baking, photoresist development, cleaning, drying, or other suitable processes. Specifically, according to some embodiments, a photoresist layer 204 may be formed on the organic insulating layer 112, and a photomask 202 may be used in the photolithography process. In some embodiments, the photomask 202 may include a halftone photomask that can provide multiple transmission levels.

[0149] like Figure 6E As shown, a portion of the photoresist layer 204 may be removed during the photolithography process to form a remaining photoresist layer 204', and the remaining photoresist layer 204' may be disposed within a portion of the first opening 108p and / or the second opening 110p. Figure 6F As shown, a portion of the organic insulating layer 112 and / or the remaining photoresist layer 204' may be removed to form an organic insulating layer 112 having a profile (e.g., having different thicknesses in the first opening 108p and the second opening 110p). In some embodiments, the remaining photoresist layer 204' may be removed by an ashing process or an etching process.

[0150] Next, please refer to Figures 7A - 7F , Figures 7A - 7F In some other embodiments according to the present invention, Figure 1A An enlarged schematic diagram of region A during the manufacturing process of the electronic modulation device 10 is shown. Figures 7A - 7F The steps shown are similar to Figures 6A - 6F The steps shown are similar, the difference between them is that, Figure 7D As shown, the photomask 202' used in the photolithography process may include a full tone photomask that provides a single level of transparency. Figure 7E As shown, in this embodiment, the remaining photoresist layer 204' may be disposed on the top surface 110S1 of the first electrode 110. In some embodiments, according to the profile of the final organic insulating layer 112, the remaining photoresist layer 204' may not be disposed in the first opening 108p and / or the second opening 110p.

[0151] Next, please refer to Figures 8A - 8D , Figures 8A - 8D In some embodiments according to the present invention, Figure 2A FIG. 2 is an enlarged schematic diagram of region C of the process of manufacturing the electronic modulation device 20. It should be understood that additional operations may be provided before, during, and / or after the process of manufacturing the electronic modulation device 20. In some embodiments, some of the stages described may be replaced or deleted. In some embodiments, the order of the operations may be interchanged.

[0152] Please refer to Figure 8A , and provide the first substrate 102. The first electrode 110 may be formed on the first substrate 102. The first electrode 110 may be patterned to form a second opening 110p. The second opening 110p may expose a part of the top surface 102A of the first substrate 102. Thereafter, the organic insulating layer 112 may be formed on the first electrode 110 and within the second opening 110p. In some embodiments, the organic insulating layer 112 may be conformally formed on the first electrode 110 and the first substrate 102.

[0153] The steps of forming the first electrode 110 and the organic insulating layer 112 may be similar to the steps described above, and will not be elaborated herein.

[0154] Next, please refer to Figure 8B and Figure 8C , and the organic insulating layer 112 may be patterned by a photolithography process. Specifically, according to some embodiments, a photoresist layer 204 may be formed on the organic insulating layer 112, and a photomask 202 may be used in the photolithography process. In some embodiments, the photomask 202 may include a halftone photomask that can provide multiple degrees of penetration.

[0155] Please refer to Figure 8C , and a part of the photoresist layer 204 may be removed during the photolithography process to form a remaining photoresist layer 204'. The remaining photoresist layer 204' may be disposed within a part of the second opening 110p. Next, as Figure 8D shown, a part of the organic insulating layer 112 and / or the remaining photoresist layer 204' may be removed to form an organic insulating layer 112 having a profile (e.g., having different thicknesses within the second opening 110p). In some embodiments, the remaining photoresist layer 204' may be removed by an ashing process or an etching process.

[0156] Next, please refer to Figures 9A - 9D , Figures 9A - 9D which shows an enlarged schematic view of region C in the process of manufacturing the electronic modulation device 20 according to some other embodiments of the present invention. Figure 2A The steps shown in Figures 9A - 9D are similar to the steps shown in Figures 8A - 8D , and the difference between them is that, as Figure 9B shown, the photomask 202' used in the photolithography process may include a full photomask that can provide a single degree of penetration. As Figure 9C shown, in this embodiment, the remaining photoresist layer 204' may be disposed on the top surface 110S1 of the first electrode 110. In this embodiment, the remaining photoresist layer 204' may not be disposed within the second opening 110p.

[0157] In summary, according to some embodiments of the present invention, an electronic modulation device is provided. The electronic modulation device may include organic insulating layers with different thicknesses within an opening defined by a buffer layer or an electrode, which can reduce the dielectric loss of electromagnetic waves or prevent metal ions of the electrode from diffusing into the modulation material.

[0158] Although the embodiments of the present invention and their advantages have been described above, it should be understood that any person skilled in the art can make modifications, substitutions, and refinements without departing from the spirit and scope of the present invention. For example, it can be easily understood by those skilled in the art that many features, functions, steps, and materials described herein can be changed while remaining within the scope of the present invention. In addition, the scope of protection of the present invention is not limited to the processes, machines, manufactures, compositions of matter, devices, methods, and steps in the specific embodiments described in the specification. Any person skilled in the art can understand from the disclosure of the present invention the processes, machines, manufactures, compositions of matter, devices, methods, and steps developed currently or in the future, as long as they can perform substantially the same functions or achieve substantially the same results as those in the embodiments described herein, and can be used according to the present invention. Therefore, the scope of protection of the present invention includes the above-mentioned processes, machines, manufactures, compositions of matter, devices, methods, and steps. Additionally, each claim constitutes an individual embodiment, and the scope of protection of the present invention also includes the combination of each claim and embodiment. As long as the features between the embodiments of the present invention do not violate the spirit of the invention or conflict with each other, they can be arbitrarily combined and used.

Claims

1. An electronic modulation device, characterized in that, Comprising: A substrate; A buffer layer disposed on the substrate, the buffer layer including a first opening that defines a first top edge and a first bottom edge of the buffer layer; An electrode disposed on the buffer layer, the electrode including a second opening that defines a second top edge and a second bottom edge of the electrode; And An organic insulating layer disposed on the electrode and within the first opening and the second opening, wherein a thickness of the organic insulating layer at the second bottom edge is greater than a thickness of the organic insulating layer at the first top edge; Wherein, in a cross-sectional direction, there is a distance between the second bottom edge and the first top edge, and the range of the distance is between 1 micrometer and 50 micrometers; Wherein, in a top-down view, the shape of the first opening is rectangular, square, triangular, pentagonal, hexagonal, heptagonal, octagonal, circular, oval or ring-shaped.

2. The electronic modulation device according to claim 1, wherein Wherein the electrode has a first inner side surface, and at least a part of the first inner side surface has a curved shape.

3. The electronic modulation device according to claim 1, characterized in that, Wherein the electrode has a first inner side surface, and at least a part of the first inner side surface has a concave shape.

4. The electronic modulation device according to claim 1, characterized in that, Wherein the electrode has a first inner side surface, and at least a part of the first inner side surface has a wavy shape.

5. The electronic modulation device according to claim 1, wherein, Wherein the buffer layer has a second inner side surface, and at least a part of the second inner side surface has a curved shape.

6. The electronic modulation device according to claim 1, wherein, Wherein the buffer layer has a second inner side surface, and at least a part of the second inner side surface has a concave shape.

7. The electronic modulation device according to claim 1, wherein, Wherein the buffer layer has a second inner side surface, and at least a part of the second inner side surface has a wavy shape.

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