A post-cmp cleaning method and associated apparatus

Abstract

The application provides a post-CMP cleaning method, which comprises the following steps: cleaning a first wafer after CMP in a cleaning tank with cleaning liquid; lifting the first wafer after cleaning from the cleaning tank, and spraying dry gas on the first wafer by selecting at least one first spray plate from a plurality of first spray plates provided with first spray holes; selecting at least one second spray plate from a plurality of second spray plates provided with second spray holes, and spraying purge gas on the first wafer after the drying process; detecting and analyzing the contamination distribution of the first wafer after the purge process to obtain the second spray hole blockage condition of the second spray plate, wherein the second spray hole blockage condition is used as the basis for selecting at least one target second spray plate from the plurality of second spray plates to perform the purge process on a second wafer.

Description

Technical Field

[0001] This invention relates to the field of post-CMP cleaning in semiconductors, and more particularly to a post-CMP cleaning method and related equipment. Background Technology

[0002] In semiconductor manufacturing processes, after chemical mechanical planarization (CMP), wafers need to be cleaned and dried to prevent contaminants generated during CMP from adhering to the wafers and causing defects that would prevent the wafers from becoming finished products.

[0003] Currently, after CMP (Chemical Mechanical Processing) and after the wafer is cleaned with a cleaning solution, it is generally dried again using drying gases and inert gases to remove moisture and contaminants contained in the moisture, preventing defects such as water stains from forming on the wafer surface. For details, please refer to... Figure 1 The cleaning liquid, drying gas, and inert gas are respectively transported through corresponding delivery pipes. Among them, 101 is the wafer, 103 is the fluid delivery pipe, and 102 is the fluid injection direction. The wafer is cleaned with cleaning liquid at the cleaning tank 104, and then drying gas, such as nitrogen atomizing isopropanol, is injected from the injection holes of the spray plate at the drying chamber 105 to remove moisture from the wafer surface. Then, inert gas, such as nitrogen, is injected from the injection holes of the spray plate at the purging chamber 106 to clean the wafer again, thereby completing the drying of the wafer.

[0004] However, during the wafer drying process, it often happens that the operator is unaware that the spray plate is blocked and continues to dry as usual. This situation results in the wafer failing to achieve the intended cleanliness level even after drying. Summary of the Invention

[0005] This invention provides a post-CMP cleaning method, which obtains the clogging status of the spray holes of the spray plate by detecting the contamination distribution of the wafer, and determines the target spray plate for wafer drying and purging based on the clogging status of the spray holes.

[0006] In a first aspect, the present invention provides a post-CMP cleaning method, comprising: a cleaning step: placing a first wafer after CMP in a cleaning tank containing cleaning fluid for cleaning; a drying step: slowly raising the first wafer after cleaning from the cleaning tank, and simultaneously spraying drying gas onto the front and back sides of the first wafer through at least one of a plurality of first spray plates provided with first spray holes; a purging step: selecting at least one second spray plate from a plurality of second spray plates provided with second spray holes, and spraying purging gas onto the front and back sides of the first wafer after the drying step; and a detection step: detecting and analyzing the contamination distribution of the first wafer after the purging step to obtain the clogging status of the second spray holes of the second spray plates, and / or the clogging status of the first spray holes of the first spray plates, wherein the clogging status of the second spray holes serves as the basis for selecting at least one target second spray plate from a plurality of second spray plates to perform the purging step on the second wafer, and the clogging status of the first spray holes serves as the basis for selecting at least one target first spray plate from a plurality of first spray plates to perform the drying step on the second wafer.

[0007] In one possible implementation, the cleaning process further includes: during the process of the first wafer entering and / or exiting the cleaning tank, simultaneously spraying the cleaning liquid onto the first wafer through a third spray plate disposed in the cleaning tank to rinse the first wafer.

[0008] In one possible implementation, the method includes a second preset condition and / or a first preset condition. After obtaining the clogging status of the second spray orifice of the second spray plate and / or the clogging status of the first spray orifice of the spray plate, the method further includes: determining at least one first spray plate to be replaced based on the first spray orifice clogging status and the first preset condition; replacing the first spray plate to be replaced; selecting the target first spray plate from the replaced first spray plate and / or the unreplaced first spray plate and spraying the drying gas onto the front and back sides of the second wafer; and / or determining at least one second spray plate to be replaced based on the second spray orifice clogging status and the second preset condition; replacing the second spray plate to be replaced; selecting the target second spray plate from the replaced second spray plate and / or the unreplaced second spray plate and spraying the purging gas onto the front and back sides of the second wafer.

[0009] In one possible implementation, the method includes a second preset similarity threshold for the second spray plate and a second preset replacement threshold for the second spray plate. The method includes: determining all similarities greater than or equal to the second preset similarity threshold from the similarity of the clogging status of the second spray holes of each second spray plate according to the second preset similarity threshold, thereby determining the second spray plate associated with the similarity as the second clogging spray plate, and determining the number of clogging points of the second clogging spray plate.

[0010] If the second preset condition is that the number of blockages in the second blockage spray plate is greater than or equal to the second preset replacement threshold of the second spray plate, then the second blockage spray plate is determined as the second spray plate to be replaced.

[0011] If the second preset condition is that the number of blockages on the second blockage spray plate is less than the preset replacement threshold of the second spray plate, then the second blockage spray plate is removed from the at least one second spray plate in the purging process, and the remaining second spray plate after removing the second blockage spray plate is determined as the initial second spray plate, and the following is executed:

[0012] Step 1: Select at least one target second spray plate from the initial second spray plate to perform a purging process on the second wafer, and perform the detection process to obtain the similarity of the second spray hole blockage status of each target second spray plate;

[0013] Step 2: From the similarity of the clogging status of the second injection holes of each of the target second injection plates, if all similarities greater than or equal to the second preset similarity threshold are determined, then the target second injection plate associated with the similarity is determined as the second amplified clogging injection plate, and the number of the second amplified clogging injection plates is determined. Then, the second amplified clogging injection plate and the second clogging injection plate are jointly determined as the second clogging injection plate, and the number of clogging points on the second clogging injection plate is re-determined.

[0014] or,

[0015] If, based on the similarity of the blockage status of the second injection holes of each of the target second injection plates, it is determined that the similarity of the blockage status of the second injection holes of each of the target second injection plates is all less than the second preset similarity threshold, then it is determined that there are zero second amplified blockage injection plates, and the second blockage injection plates are maintained.

[0016] Step 3: If the number of blockages on the second blockage spray plate is less than the preset replacement threshold of the second spray plate, then the second amplification blockage spray plate is excluded from the initial second spray plate, so that the initial second spray plate after excluding the second amplification blockage spray plate is re-determined as the initial second spray plate, and the second wafer is re-determined, and steps 1 to 3 are performed on the re-determined second wafer.

[0017] The process of executing steps 1 to 3 is repeated until the condition that the number of blockages on the second blockage spray plate is greater than or equal to the preset replacement threshold of the second spray plate is triggered. Then, the process of executing steps 1 to 3 is stopped, and the second blockage spray plate is identified as the second spray plate to be replaced.

[0018] In one possible implementation, the method includes: obtaining a contamination distribution pattern on the surface of the first wafer after the purging process; and analyzing the similarity of each second spray plate based on the orifice distribution pattern of each second spray plate used to spray purging gas onto the first wafer in the purging process and the contamination distribution pattern, to determine the clogging status of the second spray holes of each second spray plate after the purging process is performed on the first wafer.

[0019] In one possible implementation, where the nozzle distribution patterns of the multiple second spray plates are all different, the method includes: acquiring a nozzle distribution pattern for each of the second spray plates used to spray purging gas onto the first wafer during the purging process; acquiring a target contamination distribution pattern corresponding to each nozzle distribution pattern from the contamination distribution patterns; calculating the similarity between the corresponding nozzle distribution pattern and the target contamination distribution pattern; and determining the second nozzle blockage status of each of the at least one second spray plate based on the similarity of each of the at least one second spray plate.

[0020] In one possible implementation, if, during the purging process, the purging gas is sprayed onto the front and back sides of the first wafer using two second spray plates, the two second spray plates have identical nozzle distribution patterns, and the two second spray plates have an angular difference in relative position, then the method includes: obtaining a nozzle distribution pattern for each of the two second spray plates; obtaining a target contamination distribution pattern corresponding to each nozzle distribution pattern from the contamination distribution pattern; determining the correspondence between each target contamination distribution pattern and the two second spray plates based on the angular difference in relative position and the positioning edge of the first wafer; calculating the similarity between the corresponding target contamination distribution pattern and each nozzle distribution pattern based on the correspondence; and determining the hole blockage status corresponding to the two second spray plates based on each similarity.

[0021] In one possible implementation, the method further includes: issuing a second prompt message based on the blockage status of the second injection orifice, the second prompt message being used to indicate the status information of the blockage status of the second injection orifice of each of the second injection plates and / or the replacement information of the second injection plate to be replaced.

[0022] In one possible implementation, the method includes simultaneously spraying nitrogen gas onto both sides of the first wafer while spraying dry gas onto both sides of the first wafer, the nitrogen gas being used to atomize, blow, and spray the dry gas onto both sides of the first wafer.

[0023] In one possible implementation, the method includes the nitrogen gas being the same as the purging medium, and the drying gas comprising isopropanol.

[0024] In one possible implementation, the first wafer may be the same as or different from the second wafer.

[0025] Secondly, this application provides a post-CMP cleaning apparatus for cleaning after CMP, comprising:

[0026] The cleaning module is used to place the first wafer after CMP into a cleaning tank containing cleaning solution for cleaning.

[0027] The drying module is used to slowly lift the first wafer after cleaning from the cleaning tank, and at the same time spray drying gas onto the front and back of the first wafer through at least one of the multiple first spray plates with first spray holes.

[0028] The purging module is used to select at least one second spray plate from multiple second spray plates provided with second spray holes, and spray purging gas onto the front and back sides of the first wafer after the drying process;

[0029] The detection module is used to detect and analyze the contamination distribution of the first wafer after the purging process, and obtain the clogging status of the second spray holes of the second spray plate and / or the clogging status of the first spray holes of the first spray plate. The clogging status of the second spray holes serves as the basis for selecting at least one target second spray plate from multiple second spray plates to perform the purging process on the second wafer, and the clogging status of the first spray holes serves as the basis for selecting at least one target first spray plate from multiple first spray plates to perform the drying process on the second wafer.

[0030] Thirdly, the present invention provides a computer storage medium, characterized in that the computer storage medium stores one or more instructions, which, when executed by one or more computers, cause the one or more computers to perform the operation of any of the methods described in the first aspect. Fourthly, the present invention provides a computer program product, characterized in that it includes computer-readable instructions, which, when executed on a computer device, cause the computer device to perform any of the methods described in the first aspect.

[0031] Beneficial effects: In this invention, a cleaning process, a drying process, a purging process, and an inspection process are sequentially performed on the first wafer. In the inspection process, the clogging status of the spray holes of the spray plate is obtained by detecting the contamination distribution of the first wafer, and at least one target spray plate for drying and purging the second wafer is determined based on the clogging status of the spray holes, thereby reducing the probability of low wafer yield. Attached Figure Description

[0032] Figure 1 This is a post-CMP cleaning structure based on existing technology;

[0033] Figure 2 This is a flowchart of a post-CMP cleaning process according to the present invention;

[0034] Figure 3 This invention provides a post-CMP cleaning structure.

[0035] Figure 4 This is another CMP post-cleaning flowchart of the present invention;

[0036] Figure 5 This invention provides a process for replacing a spray plate.

[0037] Figure 6 This invention provides a process for detecting injection holes.

[0038] Figure 7 This is the injection hole distribution pattern of the present invention;

[0039] Figure 8 This is another injection hole detection process according to the present invention;

[0040] Figure 9 This is another injection hole detection process according to the present invention;

[0041] Figure 10 This invention relates to a post-CMP cleaning device. Detailed Implementation

[0042] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention. It should be understood that relative terms such as "above," "below," "top," "bottom," and "over" shown in the drawings are used to describe the relationships between various elements. These relative terms are intended to cover different orientations of elements other than those depicted in the drawings. For example, if the device is inverted relative to the view in the drawings, an element described, for example, as being "above" another element would now be below that element.

[0043] In the prior art, see Figure 1 After CMP processing, the wafer is first cleaned in a cleaning tank under the drive of a carrier, for example by spraying the wafer with a cleaning solution of heavy ion water. Then, the wafer is dried by spraying a drying gas, such as isopropanol. Finally, the wafer is purged by spraying a purging gas, such as nitrogen.

[0044] In the aforementioned prior art process, when purging the wafer, nitrogen gas often cannot be ejected from the spray holes in the spray plate to purge the wafer due to blockage, resulting in contaminant particles on the wafer surface and ultimately leading to poor wafer quality.

[0045] Therefore, the present invention provides a post-CMP cleaning method to address the problem that the spray holes of the spray plate are blocked due to the previous post-CMP cleaning process of the wafer, resulting in poor product quality of the subsequent wafers due to inadequate drying and / or purging processes in the post-CMP cleaning process.

[0046] Please see Figure 2 and Figure 3 This invention reduces the probability of poor wafer quality by monitoring the state of the spray holes and reselecting the spray plate to blow subsequent wafers based on the monitoring results. Figure 3 This is a cross-sectional schematic diagram of a partial structure of a CMP post-cleaning device as an example of the present invention.

[0047] 201. Cleaning process: The first wafer after CMP is placed in a cleaning tank containing cleaning solution for cleaning;

[0048] After CMP processing, the first wafer undergoes a cleaning process. The first wafer is placed in a cleaning tank using a carrier drive for cleaning. (See [link to relevant documentation]). Figure 3 301, for example, involves immersing a first wafer in a cleaning tank containing a cleaning solution, such as heavy-ion water. The cleaning tank may have an outlet pipe and an inlet pipe. The inlet pipe sprays the cleaning solution onto both sides of the wafer through nozzles on a spray plate, thereby rinsing the first wafer. The outlet pipe drains the cleaning solution from the cleaning tank.

[0049] It should be noted that the first wafer can be subjected to both immersion cleaning and immersion cleaning simultaneously, or one of the two methods; no specific limitation is made here.

[0050] 202. Drying process: The first wafer after cleaning is slowly lifted from the cleaning tank, and at the same time, drying gas is sprayed onto the front and back of the first wafer through at least one of the multiple first spray plates equipped with first spray holes.

[0051] After the first wafer undergoes a cleaning process, it is then dried. Please refer to [link / reference]. Figure 3 In section 302, the first wafer, driven by a carrier, enters an outlet pipe equipped with a drying gas jet. The outlet pipe has multiple first spray plates, each with multiple first spray holes arranged in a specific pattern. The drying gas is ejected through these holes to dry one or more sides of the first wafer, or one side in particular; the specific method is not limited here. Specifically, at least one of the multiple first spray plates is selected to spray the drying gas onto the first wafer.

[0052] The drying gas is isopropanol, or isopropanol with added nitrogen; the specific type is not limited here. Nitrogen is used to atomize the drying gas, such as isopropanol, thereby increasing the drying effect of the drying gas on the water molecules attached to the first wafer.

[0053] 203. Purging process: Select at least one second spray plate from multiple second spray plates equipped with second spray holes, and spray purging gas onto the front and back sides of the first wafer after the drying process;

[0054] After the first wafer undergoes the drying process, it is also driven by a carrier into an outlet pipe equipped with a purge gas jet. Please refer to [link to relevant documentation]. Figure 3 303. The outlet pipe for injecting purge gas is equipped with multiple second injection plates, each second injection plate having multiple second injection holes. The multiple second injection holes have an overall arrangement pattern; please refer to [reference needed]. Figure 5 , Figure 5 The overall arrangement of the second injection holes is exemplified, but other arrangements also exist. The purge gas is ejected through multiple second injection holes to purge the front and side surfaces, or one side, of the first wafer; specific arrangements are not limited here. Specifically, at least one second injection plate is selected from multiple second injection plates to inject purge gas onto the first wafer. The purge gas is an inert gas, such as nitrogen.

[0055] 204. Inspection process: The first wafer after the purging process is subjected to contamination distribution detection and analysis to obtain the clogging status of the second spray holes of the second spray plate and / or the clogging status of the first spray holes of the first spray plate. The clogging status of the second spray holes serves as the basis for selecting at least one target second spray plate from multiple second spray plates to perform the purging process on the second wafer, and the clogging status of the first spray holes serves as the basis for selecting at least one target first spray plate from multiple first spray plates to perform the drying process on the second wafer.

[0056] After the first wafer completes the purging process, an inspection process is performed on the first wafer. This involves detecting and analyzing the contamination distribution on the surface of the first wafer to obtain the clogging status of the second spray holes on the second spray plate and the clogging status of the first spray holes on the first spray plate. Alternatively, only one of the clogging statuses of the second and first spray holes can be obtained; the specific clogging status is not limited here. The obtained clogging status is then used to select a target spray plate from the spray plates corresponding to that clogging status. This target spray plate is used to perform the purging process on the second wafer.

[0057] It should be noted that after detecting and analyzing the contamination distribution on the surface of the first wafer, three scenarios emerged.

[0058] Scenario 1: If the blockage status of the second nozzles of the second spray plate and the first nozzles of the first spray plate are obtained simultaneously, then before the drying process of the second wafer, at least one first target spray plate is determined from multiple first spray plates based on the obtained first nozzle blockage status. This first target plate serves as the basis for spraying drying gas during the subsequent drying process of the second wafer. Before the purging process of the second wafer, at least one second target spray plate is determined from multiple second spray plates based on the obtained second nozzle blockage status. This second target plate serves as the basis for spraying purging gas during the purging process of the second wafer. It should be noted that the first target spray plate is selected from the remaining first spray plates after excluding unnecessary first spray plates, and similarly, the second target spray plate is selected from the remaining second spray plates after excluding unnecessary second spray plates. It should be noted that in Scenario 1, the two determination methods can be used simultaneously, or one can be used first and the remaining ones second. The specific method is not limited here.

[0059] Scenario 2: If the first spray hole of the first spray plate is found to be blocked, then before the drying process of the second wafer, at least one first target spray plate is determined from the multiple first spray plates according to the obtained first spray hole blockage status, which is used as the basis for spraying drying gas when the second wafer is subsequently dried. Please refer to Scenario 1 for the determination of this basis.

[0060] Scenario 3: If the second spray hole of the second spray plate is found to be blocked, then before the second wafer is purged, at least one second target spray plate is determined from the multiple second spray plates according to the obtained second spray hole blockage status. This target plate is used as the basis for spraying purging gas when the second wafer is purged in the subsequent purging process. Please refer to Scenario 1 for the determination of this basis.

[0061] Combination Figure 2 Please refer to Figure 4 , Figure 4 After completing the inspection process for the first wafer, the system identifies and replaces the spray plate to be replaced. It should be noted that... Figure 4 This is used to illustrate the determination and replacement of the second spray plate to be replaced. The determination and replacement of the first spray plate to be replaced are similar and will not be repeated here.

[0062] 401. Determine at least one second spray plate to be replaced based on the blockage status of the second spray hole and the second preset conditions;

[0063] The method also includes a second preset condition: after the first wafer is inspected, at least one second spray plate that needs to be replaced is determined based on the blockage status of the second spray hole and the second preset condition.

[0064] 402. Replace the second spray plate to be replaced;

[0065] After identifying at least one second spray plate to be replaced, replace the at least one second spray plate with a second spray plate that meets the preset conditions.

[0066] 403. Select the target second spray plate from the replaced second spray plate and / or the unreplaced second spray plate and spray the purging gas onto the front and back sides of the second wafer.

[0067] After replacing the second spray plate to be replaced, at least one target second spray plate is selected from the replaced second spray plate and / or the unreplaced second spray plate to spray purging gas onto the second wafer.

[0068] It should be noted that the selected target second spray plate can be chosen from the at least one replaced second spray plate, or from the remaining second spray plates, or from both replaced and remaining second spray plates. The selection method is determined by the number of replaced and remaining second spray plates, and is not specifically limited here. The purging gas is sprayed onto the second wafer, which can be done on both the front and back sides of the second wafer, or on one of the front and back sides; the specific method is not limited here.

[0069] It should be noted that, Figure 4 The determination and replacement of the second spray plate to be replaced in the implementation method can be combined Figure 2 In either scenario one or scenario three, in combination Figure 2 In this situation, the determination of the first spray plate to be replaced and the implementation of its replacement are necessary. Similarly, Figure 4 The determination and replacement of the first spray plate to be replaced in the implementation method can be combined Figure 2 In either scenario one or scenario two, in combination Figure 2 In the event of a situation where a second spray plate needs to be replaced, the determination of the second spray plate to be replaced and the implementation of its replacement are carried out.

[0070] Understandably, there are first preset conditions in determining and replacing the first spray plate to be replaced. For the first spray plate, the following steps are taken: determining at least one first spray plate to be replaced based on the blockage status of the first spray hole and the first preset conditions; replacing the first spray plate to be replaced; selecting the target first spray plate from the replaced first spray plate and / or the unreplaced first spray plate and spraying the purging gas onto the front and back sides of the newly determined first wafer. Due to the implementation method and Figure 4 Similarly, the specifics will not be elaborated here.

[0071] Please see Figure 5 , Figure 5 An implementation method is provided to replace the second spray plate to be replaced according to a preset replacement threshold, which reduces the frequency of replacing spray plates with blocked spray holes and increases the probability of high wafer yield.

[0072] Since replacing the clogged spray plate after a nozzle blockage occurs is time-consuming and labor-intensive, a preset replacement threshold is set to reduce the tedious operation of replacing the spray plate upon detection of blockage and improve the flexibility of replacement. The preset replacement threshold is a pre-defined number of spray plates indicating blockage; the second spray plate corresponds to the second preset replacement threshold, and the first spray plate corresponds to the first preset replacement threshold.

[0073] 501. Based on the second preset similarity threshold, determine all similarities greater than or equal to the second preset similarity threshold from the similarity of the blockage status of the second injection holes of each second injection plate, thereby determining that the second injection plate associated with the similarity is the second blockage injection plate, and determining the number of blockages of the second blockage injection plate;

[0074] This invention includes a second preset similarity threshold. After the detection process, based on the second preset similarity threshold, from the similarity of the clogging status of the second injection holes of each second injection plate in the purging process, all similarities greater than or equal to the second preset similarity threshold are determined. Then, the second injection plate associated with this similarity is determined as the second clogging injection plate, and the number of clogging points on the second clogging injection plate is determined. Each second injection plate in the purging process corresponds to its own second injection hole clogging status, including a similarity threshold.

[0075] It should be noted that the preset similarity threshold is used as a critical value to determine whether the spray orifice is blocked. If the similarity of the spray plates is less than the preset similarity, the spray plates are not blocked; if the similarity of the spray plates is greater than or equal to the preset similarity, the spray plates are blocked. Therefore, in the detection process, there may be cases where the spray plates being detected are blocked or not blocked.

[0076] It is understandable that the first spray plate corresponds to a first preset similarity threshold, a first blocked spray plate, and the number of blocks on the first blocked spray plate, and the second spray plate corresponds to a second preset similarity threshold, a second blocked spray plate, and the number of blocks on the second blocked spray plate.

[0077] 502. If the second preset condition is that the number of blockages in the second blockage spray plate is greater than or equal to the second preset replacement threshold of the second spray plate, then the second blockage spray plate is determined as the second spray plate to be replaced.

[0078] If the second preset condition is that the number of blockages on the second blockage spray plate is greater than or equal to the preset replacement threshold of the second spray plate, then the second blockage spray plate is determined to be the second spray plate to be replaced. Due to the variability and randomness of actual situations, there may be cases where the number of blockages directly exceeds the preset replacement threshold. The second preset replacement threshold is an integer greater than or equal to 1.

[0079] 503. If the second preset condition is that the number of blockages in the second blocking spray plate is less than the preset replacement threshold of the second spray plate, then the second blocking spray plate is removed from the at least one second spray plate in the purging process, and the remaining second spray plate after removing the second blocking spray plate is determined as the initial second spray plate, and the following steps are performed: Step 1: Perform a purging process on the second wafer through the initial second spray plate, and perform the detection process; Step 2: From the similarity of the second spray hole blockage status of each of the target second spray plates, if all similarities greater than or equal to the second preset similarity threshold are determined, then the target second spray plate associated with the similarity is determined as the second amplifying blocking spray plate, and the number of the second amplifying blocking spray plates is determined, and then the second amplifying blocking spray plate and the second blocking spray plate are jointly determined as the second blocking spray plate, and the number of blockages in the second blocking spray plate is re-determined, or If, based on the similarity of the blockage status of the second nozzles of each target second spray plate, it is determined that the similarity of the blockage status of the second nozzles of each target second spray plate is less than the second preset similarity threshold, then it is determined that there is a second amplified blockage spray plate with a quantity of zero, and the second blockage spray plate is maintained; Step 3: If the number of blockages in the second blockage spray plate is less than the preset replacement threshold of the second spray plate, then the second amplified blockage spray plate is excluded from the initial second spray plate, so that the initial second spray plate after excluding the second amplified blockage spray plate is re-determined as the initial second spray plate, and the second wafer is re-determined, and steps 1 to 3 are executed on the re-determined second wafer; until the condition that the number of blockages in the second blockage spray plate is greater than or equal to the preset replacement threshold of the second spray plate is triggered, then the repeated execution of steps 1 to 3 is stopped, and the second blockage spray plate is determined as the second spray plate to be replaced.

[0080] When the second preset condition is that the number of blockages on the second blockage injection plate is less than the preset replacement threshold of the second injection plate, the second blockage injection plate is removed from at least one second injection plate in the purging process. Then, all the remaining second injection plates after removing the second blockage injection plates are determined as the initial second injection plates. That is, in subsequent purging processes, the target second injection plate used to spray purging gas is selected from the initial second injection plates. Then, steps 1 to 3 are executed sequentially.

[0081] Step 1 involves performing a purging process on the second wafer by selecting at least one target second spray plate in the initial second spray plate, followed by an inspection process that detects the blockage status of the second spray holes in the target second spray plate.

[0082] Step 2: Since the detection process in Step 1 targets the clogging status of the second injection holes of the target second injection plate, after determining the similarity of at least one target second injection plate, there are two scenarios. The first scenario is that among the similarities, there is one with a similarity greater than or equal to the second preset similarity threshold. The second scenario is that among the similarities, all are less than the second preset similarity threshold. For the first scenario, the similarities greater than or equal to the second preset similarity threshold are obtained from the similarity set, and then the target second injection plate corresponding to the similarity greater than or equal to the second preset similarity threshold is determined. The target second injection plate with a similarity greater than or equal to the second preset similarity threshold is identified as the second amplified clogging injection plate, and the number of such second amplified clogging injection plates is determined. Then, the second amplified clogging injection plate and the second clogging injection plate are jointly identified as the second clogging injection plate, and the number of clogging points of the jointly identified second clogging injection plate is re-determined. Thus, it can be seen that the number of clogging points of the newly determined second clogging injection plate is the sum of the number of the second amplified clogging injection plate and the second clogging injection plate, and the number of clogging points of the second clogging injection plate is increasing. In the second scenario, since the similarity of the clogging status of the second injection holes of each target second injection plate is less than the second preset similarity threshold, the number of second amplified clogging injection plates is zero, meaning there are no second amplified clogging injection plates. Therefore, the second clogging injection plates remain unchanged and are in a maintained state, and the number of clogging points corresponding to the second clogging injection plates also remains unchanged and is in a maintained state. Thus, overall, the number of clogging points of the second clogging injection plates in step 2 either remains unchanged or increases.

[0083] Step 3: If it is determined that the number of blockages on the second blockage spraying plate in Step 2 is less than the preset replacement threshold of the second spraying plate, then the second amplification blockage spraying plate in Step 2 is excluded from the initial second spraying plate. The initial second spraying plate after excluding the second amplification blockage spraying plate is re-determined as the initial second spraying plate. The second wafer is then re-determined, and Steps 1 to 3 are executed on the re-determined second wafer.

[0084] In the second case in step 2, since the similarity of the second spray plate does not reach the second preset similarity threshold, although the second amplification blockage spray plate does not actually exist, the operation of re-determining the initial second spray plate after excluding the second amplification blockage spray plate is still performed. That is, the excluded second amplification blockage spray plate is zero, and the initial second spray plate after exclusion is the same as the initial second spray plate before exclusion.

[0085] The re-determined second wafer is determined from other wafers arranged sequentially after the current second wafer. For example, when there are three sequentially arranged wafers, and the first wafer in the three sequentially arranged wafers is the current second wafer in this embodiment, the re-determined second wafer can be the second wafer in the three sequentially arranged wafers. Then, in subsequent execution operations, the re-determined second wafer relative to the second wafer is the third wafer in the three sequentially arranged wafers.

[0086] After step 3, steps 1 to 3 are executed repeatedly until the condition that the number of blockages on the second blockage spray plate is greater than or equal to the preset replacement threshold of the second spray plate is triggered. Then, the repeated execution of steps 1 to 3 is stopped, and the second blockage spray plate is identified as the second spray plate to be replaced.

[0087] Understandably, before the condition that the number of blockages on the second clogging spray plate is greater than or equal to the preset replacement threshold of the second clogging spray plate is triggered, the above three steps will be repeatedly executed in each newly determined second wafer cleaning purging process after CMP. During the entire cycle, the degree of blockage on the second clogging spray plate will intensify, the number of blockages on the second clogging spray plate will increase, and the number of target second clogging spray plates used for purging in the purging process will decrease. The cycle will only break and the second clogging spray plate to be replaced will be determined when the condition that the number of blockages on the second clogging spray plate is greater than or equal to the preset replacement threshold of the second clogging spray plate is triggered.

[0088] It should be noted that this implementation method can also be applied to the implementation method of replacing the first spray plate to be replaced according to a preset replacement threshold. The first preset replacement threshold is an integer greater than or equal to 1, and is explained below:

[0089] Based on the first preset similarity threshold, from the similarity of the blockage status of the first spray holes of each first spray plate, all similarities greater than or equal to the first preset similarity threshold are determined, thereby determining the first spray plate associated with the similarity as the first blockage spray plate, and determining the number of blockages in the first blockage spray plate;

[0090] If the first preset condition for the first spray plate is that the number of blockages in the first blocked spray plate is greater than or equal to the first preset replacement threshold of the first spray plate, then the first blocked spray plate is determined as the first spray plate to be replaced.

[0091] If the first preset condition is that the number of blockages in the first clogging spray plate is less than the preset replacement threshold of the first spray plate, then the first clogging spray plate is removed from the at least one first spray plate in the drying process, and the remaining first spray plate after removing the first clogging spray plate is determined as the initial first spray plate, and the following steps are performed: Step 1: Perform the drying process on the first wafer through the initial first spray plate, and perform the detection process; Step 2: From the similarity of the blockage status of the first spray holes of each of the target first spray plates, if all similarities greater than or equal to the first preset similarity threshold are determined, then the target first spray plate associated with the similarity is determined as the first amplifying blockage spray plate, and the number of the first amplifying blockage spray plates is determined, and then the first amplifying blockage spray plate and the first clogging spray plate are jointly determined as the first clogging spray plate, and the number of blockages in the first clogging spray plate is re-determined, or, from If the similarity of the blockage status of the first nozzles of each target first spray plate is less than the first preset similarity threshold, then it is determined that there is a first amplified blockage spray plate with a number of zero, and the first blockage spray plate is maintained; Step 3: If the number of blockages in the first blockage spray plate is less than the preset replacement threshold of the first spray plate, then the first amplified blockage spray plate is excluded from the initial first spray plate, so that the initial first spray plate after excluding the first amplified blockage spray plate is re-determined as the initial first spray plate, and the first wafer is re-determined, and steps 1 to 3 are executed on the re-determined first wafer; until the condition that the number of blockages in the first blockage spray plate is greater than or equal to the preset replacement threshold of the first spray plate is triggered, then the repeated execution of steps 1 to 3 is stopped, and the first blockage spray plate is determined as the first spray plate to be replaced.

[0092] Since the implementation method of the first spray plate is similar to that of the second spray plate, the specific details will not be repeated here.

[0093] It should be noted that the inspection process for the first spray plate and the determination of the first spray plate to be replaced can be performed after the drying process and before the purging process, or the inspection process for the first spray plate and the determination of the first spray plate to be replaced can be performed simultaneously with the inspection process for the second spray plate. The specific method is not limited here.

[0094] Please see Figure 6 and Figure 7 , Figure 7 For an example of the nozzle arrangement of the second spray plate and / or the first spray plate, please refer to [the following text]. Figure 7 It can be seen that the arrangement of the jet holes is similar to the strip-like arrangement between the teeth of a comb, that is, the jet hole distribution pattern. Figure 7The provided image is merely an exemplary nozzle distribution pattern; other nozzle distribution patterns are possible. When the second nozzle becomes blocked, the purging gas cannot be ejected, leaving strip-shaped contaminant particles on the wafer surface. The shape formed by these contaminant particles constitutes the contaminant distribution pattern. Therefore, the contaminant distribution pattern on the wafer surface can be analyzed to determine the nozzle plate corresponding to the blocked nozzle. Please refer to [link to relevant documentation] for details. Figure 6 :

[0095] 601. Obtain a contamination distribution pattern on the surface of the first wafer after the purging process;

[0096] After the second spray hole of the second spray plate becomes blocked, a contamination distribution pattern similar to the distribution pattern of the second spray hole will appear on the surface of the first wafer. Based on this, the contamination distribution pattern on the surface of the first wafer after the purging process can be obtained.

[0097] 602. Based on the nozzle distribution pattern of each second spray plate used to spray purging gas onto the first wafer in the purging process and the contamination distribution pattern, analyze the similarity of each second spray plate to determine the clogging status of the second nozzles of each second spray plate after the purging process is performed on the first wafer.

[0098] Based on the orifice distribution patterns and contamination patterns of at least one second spray plate used in the purging process to spray drying gas onto the first wafer, the similarity of each second spray plate is analyzed. This similarity is calculated based on the area of ​​each orifice distribution pattern and the area of ​​the corresponding contamination pattern. By analyzing the similarity of the second spray plates in each purging process, the blockage status of the second orifices on each corresponding second spray plate can be determined.

[0099] It should be noted that, in the drying process, determining the blockage status of the first spray orifice of the first spray plate is similar to determining the blockage status of the second spray orifice of the second spray plate in the purging process. Specifically, a contamination distribution pattern is obtained on the surface of the first wafer after the drying process. Based on the orifice distribution patterns of each first spray plate used to spray purging gas onto the first wafer in the drying process and the contamination distribution pattern, the similarity between each first spray plate is analyzed to determine the blockage status of the first spray orifices of each first spray plate after the drying process. This will not be elaborated further here. It should be noted that the determination of the first spray orifice blockage status can be performed after the drying process and before the purging process, or it can be performed simultaneously with the determination of the second spray orifice blockage status in the detection process after the purging process. The specific determination is not limited here.

[0100] The cases of completely different and completely identical jet hole distribution patterns will be described separately, and the second jet plate will be used as an example.

[0101] Please see Figure 8 , Figure 8 This is used to illustrate the situation where the nozzle distribution patterns of multiple second spray plates are completely different. Since the nozzle distribution pattern of each second spray plate is different, each nozzle distribution pattern uniquely corresponds to each spray plate.

[0102] 801. Obtain the distribution pattern of each injection hole of the second injection plate used to spray purging gas onto the first wafer in the purging process;

[0103] Obtain the distribution pattern of each nozzle on the second spray plate used to spray purging gas onto the first wafer during the purging process.

[0104] 802. Obtain each target contamination distribution pattern corresponding to each injection hole distribution pattern from the contamination distribution pattern;

[0105] Since the inspection process occurs after the purging process, the contamination pattern on the surface of the first wafer is a combination of the contamination patterns of each blocked second spray plate. Therefore, it is necessary to obtain each target contamination pattern corresponding to the spray hole pattern of each second spray plate from the combined contamination pattern.

[0106] 803. Calculate the similarity between the corresponding distribution pattern of each injection hole and the contamination distribution pattern of each target;

[0107] After obtaining the corresponding nozzle distribution pattern and target contamination distribution pattern of each second spray plate in the purging process, the similarity with each second spray plate is calculated.

[0108] 804. Determine the clogging status of the second spray hole of each of the at least one second spray plate based on the similarity of each of the at least one second spray plate.

[0109] After calculating the similarity to each second spray plate in the purging process, the clogging status of the second spray hole of each second spray plate is determined based on the similarity to each second spray plate in the purging process.

[0110] It should be noted that, in the drying process, the clogging status of the first spray orifice of the first spray plate is similar to that of the second spray orifice of the second spray plate in the purging process. Specifically, in the drying process, a distribution pattern of each spray orifice of the first spray plate used to spray drying gas onto the first wafer is obtained; each target contamination distribution pattern corresponding to each spray orifice distribution pattern is obtained from the contamination distribution pattern; the similarity between the corresponding spray orifice distribution pattern and the target contamination distribution pattern is calculated; and the clogging status of the first spray orifice of each of the at least one first spray plate is determined based on the similarity of each of the at least one first spray plate. Further details are omitted here.

[0111] Please see Figure 9 , Figure 9 For cases where the nozzle distribution patterns of the two second spray plates are exactly the same, please refer to [link / reference]. Figure 8 :

[0112] 901. Obtain the distribution pattern of each injection hole of the two second injection plates;

[0113] Please refer to 801; details will not be elaborated here.

[0114] 902. Obtain each target contamination distribution pattern corresponding to each injection hole distribution pattern from the contamination distribution pattern;

[0115] Please refer to 802; details will not be elaborated here.

[0116] 903. Based on the relative position of the angular difference and the positioning edge of the first wafer, determine the correspondence between each target contamination distribution pattern and the two second spray plates;

[0117] Since the two spray nozzle patterns are identical, they cannot be directly distinguished. Therefore, they are differentiated based on the relative position of the angular difference between the two spray plates and the positioning edge of the first wafer. The two second spray plates simultaneously determine their respective first relative positions relative to the positioning edge. If their first relative positions are identical, then there exists a second relative position between the two spray plates, i.e., the relative position of the angular difference. Therefore, based on the relative position of the angular difference and the positioning edge of the first wafer, the correspondence between each target contamination pattern and the two second spray plates is determined. For example, the relative position of the angular difference can be vertical or 60°; the specific angle difference is not limited here.

[0118] 904. Based on the correspondence, calculate the similarity between the corresponding target contamination distribution pattern and the corresponding jet hole distribution pattern;

[0119] After determining the correspondence, please refer to 803; details will not be elaborated here.

[0120] 905. Determine the hole blockage status corresponding to the two second spray plates based on each similarity.

[0121] Please refer to 804; details will not be elaborated here.

[0122] It should be noted that, Figure 9 The same principle applies to the clogging status of the first spray holes on the two first spray plates in the drying process. Specifically, it involves obtaining a distribution pattern of each spray hole on the two first spray plates; obtaining a target contamination distribution pattern corresponding to each spray hole distribution pattern from the contamination distribution patterns; determining the correspondence between each target contamination distribution pattern and the two second spray plates based on the relative position of the angular difference and the positioning edge of the first wafer; calculating the similarity between the corresponding target contamination distribution pattern and each spray hole distribution pattern based on the correspondence; and determining the hole clogging status corresponding to the two second spray plates based on each similarity score. Further details are omitted here.

[0123] Combination Figures 2 to 9 This invention issues a second prompt message based on the blockage status of the second injection orifice. This second prompt message indicates the blockage status of the second injection orifice in each of the second injection plates and / or the replacement information for the second injection plate to be replaced. Similarly, this invention issues a first prompt message based on the blockage status of the first injection orifice. This first prompt message indicates the blockage status of the first injection orifice in each of the first injection plates and / or the replacement information for the first injection plate to be replaced. The blockage status information of the second injection orifice in each of the second injection plates includes the similarity between the second injection plates in each channel, and the replacement information for the second injection plate to be replaced includes information on the second injection plate that needs to be replaced. Similarly, the blockage status information of the first injection orifice in each of the first injection plates includes the similarity between the first injection plates in each channel, and the replacement information for the first injection plate that needs to be replaced includes information on the first injection plate that needs to be replaced.

[0124] Please see Figure 10 , Figure 10 A post-CMP cleaning apparatus is provided for use in post-CMP cleaning of wafers, comprising:

[0125] The cleaning module 1001 is used to place the first wafer after CMP into a cleaning tank containing cleaning solution for cleaning.

[0126] The drying module 1002 is used to slowly lift the first wafer after cleaning from the cleaning tank, and at the same time spray drying gas onto the front and back of the first wafer through at least one of the multiple first spray plates with first spray holes.

[0127] The purging module 1003 is used to select at least one second spray plate from multiple second spray plates provided with second spray holes, and spray purging gas onto the front and back sides of the first wafer after the drying process.

[0128] The detection module 1004 is used to detect and analyze the contamination distribution of the first wafer after the purging process, and obtain the clogging status of the second spray holes of the second spray plate and / or the clogging status of the first spray holes of the first spray plate. The clogging status of the second spray holes serves as the basis for selecting at least one target second spray plate from multiple second spray plates to perform the purging process on the second wafer, and the clogging status of the first spray holes serves as the basis for selecting at least one target first spray plate from multiple first spray plates to perform the drying process on the second wafer.

[0129] A computer storage medium storing one or more instructions, which, when executed by one or more computers, cause the one or more computers to perform the operations of the methods described in any of the above embodiments. A computer program product including computer-readable instructions, which, when executed on a computer device, cause the computer device to perform the methods described in any of the above embodiments.

[0130] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the systems disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and relevant parts can be referred to the method section.

[0131] Furthermore, although the present invention has been disclosed above with reference to preferred embodiments, these embodiments are not intended to limit the present invention. For any person skilled in the art, many possible variations and modifications can be made to the technical solutions of the present invention based on the disclosed technical content, or equivalent embodiments can be modified accordingly, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the present invention shall still fall within the scope of protection of the present invention.

[0132] It should also be understood that, unless otherwise specified or indicated, the terms "first," "second," "third," etc., used in the specification are merely for distinguishing individual components, elements, steps, etc., and are not for indicating logical or sequential relationships between individual components, elements, steps, etc. Furthermore, it should be recognized that the singular forms "a" and "an" used herein and in the appended claims include plural bases unless the context clearly indicates the opposite. For example, a reference to "a step" or "a device" means a reference to one or more steps or devices, and may include secondary steps and secondary devices. All conjunctions used should be understood in the broadest sense. And the word "or" should be understood as having the definition of logical "or," not the definition of logical "exclusive or," unless the context clearly indicates the opposite. Furthermore, implementation of the methods and / or devices in embodiments of the present invention may include performing selected tasks manually, automatically, or in combination.

Claims

1. A post-CMP cleaning method, characterized in that, include: Cleaning process: The first wafer after CMP is placed in a cleaning tank containing cleaning solution for cleaning; Drying process: The first wafer after cleaning is slowly lifted from the cleaning tank, and at the same time, drying gas is sprayed onto the front and back of the first wafer through at least one of the multiple first spray plates equipped with first spray holes. Purging process: Select at least one second spray plate from multiple second spray plates equipped with second spray holes, and spray purging gas onto the front and back sides of the first wafer after the drying process; Inspection process: The first wafer after the purging process is subjected to contamination distribution detection and analysis to obtain the clogging status of the second spray holes of the second spray plate and / or the clogging status of the first spray holes of the first spray plate. The clogging status of the second spray holes serves as the basis for selecting at least one target second spray plate from multiple second spray plates to perform the purging process on the second wafer, and the clogging status of the first spray holes serves as the basis for selecting at least one target first spray plate from multiple first spray plates to perform the drying process on the second wafer.

2. The method according to claim 1, characterized in that, The cleaning process also includes: During the process of the first wafer entering and / or exiting the cleaning tank, the cleaning fluid is simultaneously sprayed onto the first wafer by a third spray plate disposed in the cleaning tank to rinse the first wafer.

3. The method according to claim 1, characterized in that, The method includes a second preset condition, and after obtaining the clogging status of the second spray hole of the second spray plate and / or the clogging status of the first spray hole of the spray plate, it further includes: Based on the blockage status of the second injection hole and the second preset conditions, at least one second injection plate to be replaced is determined. Replace the second spray plate to be replaced; The purge gas is sprayed onto the front and back sides of the second wafer from either the replaced or unreplaced second spray plate.

4. The method according to claim 3, characterized in that, The method includes a second preset similarity threshold for the second spray plate and a second preset replacement threshold for the second spray plate. The step of determining at least one second spray plate to be replaced based on the blockage status of the second spray hole and the second preset condition includes: Based on the second preset similarity threshold, from the similarity of the blockage status of the second injection holes of each second injection plate, all similarities greater than or equal to the second preset similarity threshold are determined, thereby determining that the second injection plate associated with the similarity is the second blockage injection plate, and determining the number of blockages in the second blockage injection plate; If the second preset condition is that the number of blockages in the second blockage spray plate is greater than or equal to the second preset replacement threshold of the second spray plate, then the second blockage spray plate is determined as the second spray plate to be replaced. If the second preset condition is that the number of blockages on the second blockage spray plate is less than the preset replacement threshold of the second spray plate, then the second blockage spray plate is removed from the at least one second spray plate in the purging process, and the remaining second spray plate after removing the second blockage spray plate is determined as the initial second spray plate, and the following is executed: Step 1: Select at least one target second spray plate from the initial second spray plate to perform a purging process on the second wafer, and perform the detection process to obtain the similarity of the second spray hole blockage status of each target second spray plate; Step 2: From the similarity of the clogging status of the second injection holes of each of the target second injection plates, if all similarities greater than or equal to the second preset similarity threshold are determined, then the target second injection plate associated with the similarity is determined as the second amplified clogging injection plate, and the number of the second amplified clogging injection plates is determined. Then, the second amplified clogging injection plate and the second clogging injection plate are jointly determined as the second clogging injection plate, and the number of clogging points on the second clogging injection plate is re-determined. or, If, based on the similarity of the blockage status of the second injection holes of each of the target second injection plates, it is determined that the similarity of the blockage status of the second injection holes of each of the target second injection plates is all less than the second preset similarity threshold, then it is determined that there are zero second amplified blockage injection plates, and the second blockage injection plates are maintained. Step 3: If the number of blockages on the second blockage spray plate is less than the preset replacement threshold of the second spray plate, then the second amplification blockage spray plate is excluded from the initial second spray plate, so that the initial second spray plate after excluding the second amplification blockage spray plate is re-determined as the initial second spray plate, and the second wafer is re-determined, and steps 1 to 3 are performed on the re-determined second wafer. The process of executing steps 1 to 3 is repeated until the condition that the number of blockages on the second blockage spray plate is greater than or equal to the preset replacement threshold of the second spray plate is triggered. Then, the process of executing steps 1 to 3 is stopped, and the second blockage spray plate is identified as the second spray plate to be replaced.

5. The method according to any one of claims 1 to 4, characterized in that, The step of detecting and analyzing the contamination distribution of the first wafer after the purging process to obtain the clogging status of the second spray hole of the second spray plate includes: Obtain a contamination distribution pattern on the surface of the first wafer after the purging process; Based on the nozzle distribution pattern of each second spray plate used to spray purging gas onto the first wafer in the purging process and the contamination distribution pattern, the similarity of each second spray plate is analyzed to determine the clogging status of the second nozzles of each second spray plate after the purging process is performed on the first wafer.

6. The method according to claim 5, characterized in that, If the nozzle distribution patterns of the multiple second spray plates are all different, then the step of analyzing the similarity of each second spray plate based on the nozzle distribution pattern of each second spray plate used to spray purging gas onto the first wafer in the purging process and the contamination distribution pattern, in order to determine the clogging status of the second nozzles of each second spray plate after performing the purging process on the first wafer, includes: Obtain the distribution pattern of each injection hole of the second injection plate used to spray purging gas onto the first wafer during the purging process; Obtain each target contamination distribution pattern corresponding to each injection hole distribution pattern from the contamination distribution pattern; Calculate the similarity between the corresponding jet hole distribution pattern and the target contamination distribution pattern; The clogging status of the second spray hole of each of the at least one second spray plate is determined based on the similarity of each of the at least one second spray plate.

7. The method according to claim 5, characterized in that, If, in the purging process, the purging gas is sprayed onto the front and back sides of the first wafer using two second spray plates, and the two second spray plates have the same nozzle distribution pattern and a relative position with an angular difference, then based on the nozzle distribution pattern of each second spray plate used to spray purging gas onto the first wafer in the purging process and the contamination distribution pattern, the similarity of each second spray plate is analyzed to determine the clogging status of the second nozzles of each second spray plate after the purging process is performed on the first wafer, including: Obtain the distribution pattern of each injection hole of the two second injection plates; Obtain each target contamination distribution pattern corresponding to each injection hole distribution pattern from the contamination distribution pattern; Based on the relative position of the angle difference and the positioning edge of the first wafer, the correspondence between each target contamination distribution pattern and the two second spray plates is determined; Based on the correspondence, calculate the similarity between each target contamination distribution pattern and each jet hole distribution pattern; The clogging status of the holes corresponding to the two second spray plates is determined based on each similarity.

8. The method according to claim 1 or 2, characterized in that, After obtaining the first injection orifice blockage status, the method further includes: A second prompt message is issued based on the blockage status of the second spray hole. The second prompt message is used to indicate the status information of the blockage of the second spray hole of each second spray plate and / or the replacement information of the second spray plate to be replaced.

9. The method according to claim 1, characterized in that, While spraying dry gas onto the front and back surfaces of the first wafer, nitrogen gas is also sprayed. The nitrogen gas is used to atomize, blow, and spray the dry gas onto the front and back surfaces of the first wafer.

10. The method according to claim 9, characterized in that, The nitrogen gas is the same as the purging gas, and the drying gas includes isopropanol.

11. A CMP post-cleaning apparatus, characterized in that, Post-CMP cleaning applied to wafers includes: The cleaning module is used to place the first wafer after CMP into a cleaning tank containing cleaning solution for cleaning. The drying module is used to slowly lift the first wafer after cleaning from the cleaning tank, and at the same time spray drying gas onto the front and back of the first wafer through at least one of the multiple first spray plates with first spray holes. The purging module is used to select at least one second spray plate from multiple second spray plates with second spray holes, and spray purging gas onto the front and back sides of the first wafer after the drying process. The detection module is used to detect and analyze the contamination distribution of the first wafer after the purging process, and obtain the clogging status of the second spray holes of the second spray plate and / or the clogging status of the first spray holes of the first spray plate. The clogging status of the second spray holes serves as the basis for selecting at least one target second spray plate from multiple second spray plates to perform the purging process on the second wafer, and the clogging status of the first spray holes serves as the basis for selecting at least one target first spray plate from multiple first spray plates to perform the drying process on the second wafer.

12. A computer storage medium, characterized in that, The computer storage medium stores one or more instructions, which, when executed by one or more computers, cause the one or more computers to perform the operation of the method according to any one of claims 1 to 10.

13. A computer program product, characterized in that, Includes computer-readable instructions that, when executed on a computer device, cause the computer device to perform the method as described in any one of claims 1 to 10.

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