Method and apparatus for depositing low dielectric constant films

Abstract

Methods and apparatus are described to form a conformal SiOC film on a surface. A SiCN film is formed on a surface of a substrate and exposed to a vapor anneal process to reduce nitrogen content, increase oxygen content, and maintain approximately the same carbon content. The annealed film has one or more of a wet etch rate or a dielectric constant of the film.

Description

[0001] This application is a divisional application of the parent application having the application date of "April 12, 2018", the application number of "201880000826.4", and the title of "Method and apparatus for depositing low dielectric constant films". TECHNICAL FIELD

[0002] Generally, the present disclosure relates to apparatuses and methods for depositing thin films. In particular, the present disclosure relates to methods for selectively depositing films using vapor annealing. BACKGROUND

[0003] Integrated circuits can be realized by processes that produce complex patterned layers of material on a substrate surface. Producing patterned material on a substrate requires controlled methods for depositing and removing layers of material. Modern semiconductor manufacturing processes increasingly value the integration of films without air breaks between process steps. For equipment manufacturers, such requirements pose a challenge to allowing the integration of various process chambers into a single tool.

[0004] One popular process for depositing thin films is atomic layer deposition (ALD). Atomic layer deposition is a process in which a substrate is exposed to a precursor that chemisorbs to the substrate surface, followed by a reactant that reacts with the chemisorbed precursor. ALD processes are self-limiting and can provide molecular-level control of film thickness. However, ALD processing can be time-consuming due to the need to purge the reaction chamber between exposure to the precursor and the reactant.

[0005] Due to the demand for patterned applications of semiconductors, selective deposition processes are being employed more and more frequently. Traditionally, various photolithography and etching processes have been used to accomplish patterning in the microelectronics industry. However, as photolithography is becoming exponentially more complex and expensive, it becomes more attractive to use selective deposition to deposit features.

[0006] As device sizes continue to shrink to sub-10 nm, traditional patterning processes using photolithography techniques become more challenging. At smaller device sizes, imprecise patterning and reduced device performance are more prevalent. Additionally, multiple patterning techniques also complicate and make the manufacturing process more expensive.

[0007] Therefore, there is a need in the art for apparatuses and methods for selectively depositing films onto one surface in a selective manner relative to different surfaces. SUMMARY

[0008] One or more embodiments of the disclosure are directed to a method of depositing a film. A substrate having a substrate surface is provided, a plurality of features formed in the substrate surface. Each feature extends a distance from the substrate surface and has a bottom and at least one sidewall. A conformal film is formed on the substrate surface. The conformal film is exposed to a steam anneal to form an annealed conformal film having an increased oxygen content.

[0009] Additional embodiments of the disclosure are directed to a method of depositing a film. A substrate having a substrate surface is provided, a plurality of features formed in the substrate surface. Each feature extends a distance from the substrate surface and has a bottom and at least one sidewall. In an atomic layer deposition chamber, a conformal film is formed on the substrate surface by sequentially exposing the substrate to a silicon precursor and a reactant, the silicon precursor comprising bis(trichlorosilyl)methane, and the reactant comprising ammonia. The conformal film has an initial carbon content, an initial oxygen content, and an initial nitrogen content. The substrate is moved from the atomic layer deposition chamber to an anneal chamber. The conformal film is exposed to a steam anneal at a temperature in a range from about 300 °C to about 500 °C, and at a partial pressure of water of about 585 Torr, to form an annealed conformal film having a thickness in a range from about to about The annealed conformal film has an annealed post carbon content, an annealed post oxygen content, and an annealed post nitrogen content. The annealed post nitrogen content is less than the initial nitrogen content. The annealed post oxygen content is greater than the initial oxygen content. The annealed post carbon content is within ±10% of the initial carbon content. The annealed conformal film has a wet etch rate in diluted HF of less than about / minute for the first minute, a leakage current of less than or equal to about 1.5 x 10 -7 A / cm 2 , and a dielectric constant of less than 5.

[0010] Further embodiments of the disclosure are directed to a processing platform comprising a central transfer station, a batch processing chamber, a steam anneal chamber, and a controller. The central transfer station comprises a plurality of sides and has a robot disposed in the central transfer station. The batch processing chamber is connected to a side of the central transfer station. The steam anneal chamber is connected to a side of the central transfer station. The controller is coupled to the central transfer station, the batch processing chamber, and the steam anneal chamber. The controller has one or more configurations selected from: a first configuration to move a substrate to the batch processing chamber; a second configuration to provide a plurality of process gases to the batch processing chamber to deposit a film on the substrate in the batch processing chamber; a third configuration to move the substrate from the batch processing chamber to the steam anneal chamber; a fourth configuration to heat the steam anneal chamber to an anneal temperature; a fifth configuration to provide a water vapor flow to the steam anneal chamber; or a sixth configuration to remove the substrate from the steam anneal chamber. BRIEF DESCRIPTION OF DRAWINGS

[0011] The application can be more fully understood with reference to the following examples. These examples are included only to further illustrate the application and should not be construed as limiting the scope of the application, as the application can be practiced with other embodiments and in various ways.

[0012] Figure 1 A schematic illustration of a processing platform in accordance with one or more embodiments of the present disclosure is depicted;

[0013] Figure 2 A cross-sectional view of a batch processing chamber in accordance with one or more embodiments of the present disclosure is depicted;

[0014] Figure 3 A partial perspective view of a batch processing chamber in accordance with one or more embodiments of the present disclosure is depicted;

[0015] Figure 4 A schematic illustration of a batch processing chamber in accordance with one or more embodiments of the present disclosure is depicted;

[0016] Figure 5 A schematic illustration of a portion of a wedge-shaped gas distribution assembly for use in a batch processing chamber in accordance with one or more embodiments of the present disclosure is depicted;

[0017] Figure 6 A schematic illustration of a batch processing chamber in accordance with one or more embodiments of the present disclosure is depicted;

[0018] Figures 7A to 7C A schematic representation of a selective deposition method in accordance with one or more embodiments of the present disclosure is depicted; and

[0019] Figures 8A to 8C A schematic representation of a conformal deposition method in accordance with one or more embodiments of the present disclosure is depicted.

[0020] In the drawings, like reference numerals can be used to denote similar components throughout the several views. Further, various components of the same type can be distinguished by following the designation with a hundredth decimal numeral, e.g., 321 can be used to denote a second component of the three hundred twenty-first similar component. DETAILED DESCRIPTION

[0021] Before one or more exemplary embodiments of the application are described in detail, it is to be understood that the application is not limited in its application to the details of construction or to the steps of the process set forth in the following description. The application is capable of other embodiments and of being practiced or carried out in various ways.

[0022] As used herein, a "wafer" or "substrate" refers to any substrate or material surface formed on a substrate upon which film processing is performed during a fabrication process. For example, depending on the application, a substrate surface on which processing can be performed includes materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other suitable material (e.g., metals, metal nitrides, metal alloys, and other conductive materials). Substrates include, for example, semiconductor wafers. Substrates can be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, e-beam cure, and / or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, in the present application, any of the film processing steps disclosed can also be performed on an underlayer formed on the substrate, as will be disclosed in more detail below, and the term "substrate surface" is intended to include such underlayer as the context dictates. Thus, for example, in the case of a film / layer or partial film / layer having been deposited onto the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0023] For semiconductor fabrication processes at 10 nm and below, selective deposition of low dielectric constant films is an attractive technology. In other potential applications, there is a high demand for low dielectric constant spacers that can be used to reduce parasitic capacitance between the gate and source / drain contacts. Selective deposition means that film growth can be selective based on the type of substrate surface, e.g., the film can grow on a bare Si surface but not on a silicon oxide surface within a certain deposition time or target thickness. Selective deposition can avoid or reduce some process steps (e.g., lithography, etching) to obtain a layer on a patterned structure. Typically, selective deposition uses thermal deposition processes that are easy to achieve deposition conformality on 3D structures and avoid weakening surface reaction selectivity using reactive plasma species. However, thermal deposition processes, particularly those with a temperature limited to less than 550 °C, can have difficulty in fabricating films with reasonable properties, air stability, wet etch rate, dielectric constant values, etc. Thus, certain embodiments of the present disclosure advantageously provide methods that can selectively deposit films on Si relative to SiO2 surfaces. Certain embodiments advantageously provide deposition methods of films with low wet etch rates. Certain embodiments advantageously provide deposition methods of films with low dielectric constant values.

[0024] One or more embodiments of the disclosure provide methods of selectively forming a dielectric film on certain areas of a wafer in process based on surface termination chemical groups. Atomic layer deposition (ALD) film growth can be accomplished by traditional time-domain processing, or by spatial ALD in a batch processing chamber.

[0025] Certain embodiments of the disclosure provide methods of forming a conformal film on a substrate. The conformal film can be deposited on a portion or all of a surface of the substrate. For example, the conformal film can be deposited on a substrate having at least one surface feature, such as a trench or via. The conformal film has the same thickness at the top of the feature as at the bottom of the feature. In certain embodiments, the conformality of the film is measured as the thickness at the top of the feature relative to the thickness at the bottom of the feature, and can be greater than or equal to about 90%, 91%, 92%, 93%, 94%, 95%, 96%, 97%, or 98%.

[0026] Figure 1 A processing platform 100 according to one or more embodiments of the disclosure is illustrated. Figure 1 The illustrated embodiment represents only one possible configuration, and should not be considered limiting of the scope of the disclosure. For example, in certain embodiments, the processing platform 100 has a different number of process chambers, buffer chambers, and robot configurations.

[0027] The processing platform 100 includes a central transfer station 110 having a plurality of sides 111, 112, 113, 114, 115, 116. The illustrated transfer station 110 has a first side 111, a second side 112, a third side 113, a fourth side 114, a fifth side 115, and a sixth side 116. Although six sides are illustrated, one skilled in the art will appreciate that the transfer station 110 can have any suitable number of sides depending, for example, on the overall configuration of the processing platform 100.

[0028] A robot 117 is disposed in the transfer station 110. The robot 117 can be any suitable robot capable of moving wafers during processing. In certain embodiments, the robot 117 has a first robotic arm 118 and a second robotic arm 119. The first robotic arm 118 and the second robotic arm 119 can move independently of one another. The first robotic arm 118 and the second robotic arm 119 can move in an x-y plane and / or along a z-axis. In certain embodiments, the robot 117 includes a third robotic arm or a fourth robotic arm (not illustrated). Each robotic arm can move independently of the other robotic arms.

[0029] The batch processing chamber 120 can be connected to the first side 111 of the central transfer station 110. The batch processing chamber 120 can be configured to process x wafers at a time in a batch time. In certain embodiments, the batch processing chamber 120 can be configured to process in the range of about 4 (x = 4) to about 12 (x = 12) wafers at a time. In certain embodiments, the batch processing chamber 120 is configured to process 6 (x = 6) wafers at a time. Those skilled in the art will appreciate that although the batch processing chamber 120 can process multiple wafers between loading / unloading individual wafers, each wafer can be subjected to different process conditions at any given time. For example, similar to the spatial atomic layer deposition chamber shown, the wafers can be exposed to different process conditions in different processing zones, causing the process to be completed as the wafers move through the zones. Figures 2 to 6

[0030] Figure 2 A cross-section of a processing chamber 200 is illustrated, the processing chamber 200 including a gas distribution assembly 220, also referred to as an injector or injector assembly, and a susceptor assembly 240. The gas distribution assembly 220 is any type of gas delivery device used in a processing chamber. The gas distribution assembly 220 includes a front surface 221 facing the susceptor assembly 240. The front surface 221 can have any number or kind of openings to deliver a gas flow toward the susceptor assembly 240. The gas distribution assembly 220 also includes an outer edge 224, which in the illustrated embodiment is substantially circular.

[0031] ​The specific type of gas distribution assembly 220 used can be varied depending on the particular process used. Embodiments of the present disclosure can be used with any type of processing system in which the gap between the susceptor and the gas distribution assembly is controlled. While various types of gas distribution assemblies (e.g., showerheads) can be employed, embodiments of the present disclosure can be particularly useful with spatial gas distribution assemblies having a plurality of substantially parallel gas passages. As used in this specification and the appended claims, the term "substantially parallel" means that the elongated axes of the gas passages extend in generally the same direction. The parallelism of the gas passages can be somewhat imperfect. In a binary reaction, the plurality of substantially parallel gas passages can include at least one first reactive gas A passage, at least one second reactive gas B passage, at least one purge gas P passage, and / or at least one vacuum V passage. Gas flowing from the first reactive gas A passage(s), the second reactive gas B passage(s), and the purge gas P passage(s) is directed toward the top surface of the wafer. Some of the gas flow moves horizontally across the surface of the wafer and exits the process region through the purge gas P passage(s). A substrate moving from one end of the gas distribution assembly to the other will be sequentially exposed to each of the process gases to form a layer on the substrate surface.

[0032] In certain embodiments, the gas distribution assembly 220 is a rigid monolithic body made from a single injector unit. In one or more embodiments, as shown in FIG. 1, the gas distribution assembly 220 can be made from a plurality of independent segments (e.g., injector units 222). Either a monolithic body or a multi-segment body can be used with the various embodiments described in the present disclosure. Figure 3

[0033] A susceptor assembly 240 can be disposed below the gas distribution assembly 220. The susceptor assembly 240 includes a top surface 241 and at least one recess 242 in the top surface 241. The susceptor assembly 240 also has a bottom surface 243 and an edge 244. The recess 242 can be any suitable shape and size depending on the shape and size of the substrate 60 to be processed. In the embodiment shown in FIG. 1, the recess 242 has a flat bottom to support the bottom of a wafer; however, the bottom of the recess can vary. In certain embodiments, the recess has a stepped region around the outer peripheral edge of the recess, the stepped region being sized to support the outer peripheral edge of a wafer. The amount of the outer peripheral edge of the wafer supported by the step can vary depending on, for example, the thickness of the wafer and features that have already been present on the backside of the wafer. Figure 2

[0034] In certain embodiments, as shown in FIG. 2, the gas distribution assembly 220 can be a rigid monolithic body made from a single injector unit. In one or more embodiments, as shown in FIG. 3, the gas distribution assembly 220 can be made from a plurality of independent segments (e.g., injector units 222). Either a monolithic body or a multi-segment body can be used with the various embodiments described in the present disclosure. Figure 2 ​​As shown, the recess 242 in the top surface 241 of the susceptor assembly 240 is sized such that the top surface 61 of the substrate 60 supported in the recess 242 is substantially coplanar with the top surface 241 of the susceptor 240. As used in this specification and the appended claims, the term "substantially coplanar" means that the top surface of the wafer and the top surface of the susceptor assembly are coplanar to within ±0.2 mm. In certain embodiments, the top surfaces are coplanar to within 0.5 mm, ±0.4 mm, ±0.35 mm, ±0.30 mm, ±0.25 mm, ±0.20 mm, ±0.15 mm, ±0.10 mm, or ±0.05 mm.

[0035] Figure 2 The susceptor assembly 240 includes a support column 260 that is capable of raising, lowering, and rotating the susceptor assembly 240. The susceptor assembly can include a heater, or gas lines, or electrical components within the center of the support column 260. The support column 260 can be the primary component that increases or decreases the gap between the susceptor assembly 240 and the gas distribution assembly 220 to move the susceptor assembly 240 into position. The susceptor assembly 240 can also include a fine adjustment actuator 262 that can make small adjustments to the susceptor assembly 240 to create a predetermined gap 270 between the susceptor assembly 240 and the gas distribution assembly 220.

[0036] In certain embodiments, the gap 270 distance can be in the range of about 0.1 mm to about 5.0 mm, or about 0.1 mm to about 3.0 mm, or about 0.1 mm to about 2.0 mm, or about 0.2 mm to about 1.8 mm, or about 0.3 mm to about 1.7 mm, or about 0.4 mm to about 1.6 mm, or about 0.5 mm to about 1.5 mm, or about 0.6 mm to about 1.4 mm, or about 0.7 mm to about 1.3 mm, or about 0.8 mm to about 1.2 mm, or about 0.9 mm to about 1.1 mm, or about 1 mm.

[0037] The processing chamber 200 shown in the figures is a carousel-type chamber in which the susceptor assembly 240 can hold a plurality of substrates 60. As shown in FIG. 1, the processing chamber 200 includes a gas distribution assembly 220 that is configured to provide a process gas to the substrates 60. The gas distribution assembly 220 can be a showerhead assembly that is configured to provide a process gas to the substrates 60. The gas distribution assembly 220 can be configured to provide a process gas to the substrates 60 in a uniform manner. The gas distribution assembly 220 can be configured to provide a process gas to the substrates 60 in a non-uniform manner. The gas distribution assembly 220 can be configured to provide a process gas to the substrates 60 in a manner that is dependent on the position of the substrates 60 within the processing chamber 200. The gas distribution assembly 220 can be configured to provide a process gas to the substrates 60 in a manner that is dependent on the position of the substrates 60 within the processing chamber 200. Figure 3As shown, the gas distribution assembly 220 may include a plurality of spaced injector units 222, each injector unit 222 capable of depositing a film onto the wafer as it moves beneath the injector units. Two pie-shaped injector units 222 are illustrated as being positioned on roughly opposite sides of the base assembly 240 and above the base assembly 240. This number of injector units 222 is illustrated for illustrative purposes only. It will be understood that more or fewer injector units 222 may be included. In some embodiments, there are a sufficient number of pie-shaped injector units 222 to form a shape conforming to the shape of the base assembly 240. In some embodiments, each of the individual pie-shaped injector units 222 may be moved, removed, and / or replaced independently without affecting any other injector units 222. For example, a section may be raised to allow a robot to access the area between the base assembly 240 and the gas distribution assembly 220 for loading / unloading the substrate 60.

[0038] A processing chamber with multiple gas injectors can be used to process multiple wafers simultaneously, allowing the wafers to undergo the same process flow. For example, such as Figure 4 As shown, the processing chamber 200 has four gas injector assemblies and four substrates 60. At the start of processing, the substrates 60 can be positioned between the gas distribution assemblies 220. Rotating the base assembly 240 by 45° will move each substrate 60 between the gas distribution assemblies 220 to the gas distribution assembly 220 for film deposition, as illustrated by the dashed circle below the gas distribution assembly 220. An additional 45° rotation can move the substrates 60 away from the gas distribution assembly 220. The number of substrates 60 and gas distribution assemblies 220 can be the same or different. In some embodiments, the number of wafers being processed is the same as the number of gas distribution assemblies. In one or more embodiments, the number of wafers being processed is a fraction or an integer multiple of the number of gas distribution assemblies. For example, if there are four gas distribution assemblies, there are 4x wafers being processed, where x is an integer value greater than or equal to 1. In an exemplary embodiment, the gas distribution assembly 220 includes eight process regions separated by air curtains, and the base assembly 240 can hold six wafers.

[0039] Figure 4 The processing chamber 200 shown represents only one possible configuration and should not be construed as limiting the scope of this disclosure. Here, the processing chamber 200 includes a plurality of gas distribution assemblies 220. In the illustrated embodiment, four gas distribution assemblies 220 (also referred to as injector assemblies) are evenly spaced around the processing chamber 200. The processing chamber 200 shown is octagonal; however, those skilled in the art will understand that this is only one possible shape and should not be construed as limiting the scope of this disclosure. The gas distribution assembly 220 shown is trapezoidal, but may be a single circular component or may be made of multiple pie-shaped segments (e.g.,Figure 3

[0040] Figure 4 The embodiment shown includes a load lock chamber 280, or auxiliary chamber, such as a buffer station. This chamber 280 is connected to a side of the processing chamber 200 to allow, for example, a substrate (also referred to as substrate 60) to be loaded into / unloaded from the chamber 200. A wafer robot can be positioned in the chamber 280 to move the substrate onto the susceptor.

[0041] The rotation of the turntable (e.g., susceptor assembly 240) can be continuous or intermittent (discontinuous). In continuous processing, the wafer is continuously rotated so that the wafer is sequentially exposed to each injector. In discontinuous processing, the wafer can be moved to an injector region and stopped, and then moved to a region 84 between injectors and stopped. For example, the turntable can be rotated so that the wafer moves from an inter-injector region across an injector (or stops near an injector) and continues to the next inter-injector region where the turntable can again be paused. The pause between injectors can provide time for additional processing steps, such as exposure to plasma, between layer depositions.

[0042] Figure 5 A section or portion of the gas distribution assembly 220 is shown, which can be referred to as an injector unit 222. The injector unit 222 can be used individually or in combination with other injector units. For example, as shown in Figure 6 four injector units 222 can be used to form a single gas distribution assembly 220. (For clarity, lines separating the four injector units are not shown.) Although each of the injector units 222 has both a first reactive gas port 225 and a second gas port 235, in addition to the purge gas port 255 and vacuum port 245, the injector units 222 need not have all of these components. Figure 5 Figure 5

[0043] See also Figure 5 and 6 ​​​According to one or more embodiments, the gas distribution assembly 220 may include multiple segments (or injector units 222), which may be identical or different. The gas distribution assembly 220 may be disposed within a processing chamber and includes multiple extended gas ports 225, 235, and 245 on its front surface 221. The multiple extended gas ports 225, 235, 245, and 255 extend from a block near the inner peripheral edge 223 of the gas distribution assembly 220 toward a block near the outer peripheral edge 224. The illustrated multiple gas ports include a first reactive gas port 225, a second gas port 235, a vacuum port 245, and a purge gas port 255, wherein the vacuum port 245 surrounds each of the first and second reactive gas ports.

[0044] Reference Figure 5 In the embodiment shown in Or 6, although it is indicated that the port extends from at least near the inner peripheral region to at least near the outer peripheral region, the port may extend radially from the inner region to the outer region more than just. When the vacuum port 245 surrounds the reactive gas ports 225 and 235, the port may extend tangentially. Figure 5 and 6 In the illustrated embodiment, the vacuum port 245 surrounds all edges of the wedge-shaped reactive gas ports 225, 235, including the edges adjacent to the inner and outer peripheral regions.

[0045] Please see Figure 5 As the substrate moves along path 227, various portions of the substrate surface are exposed to various reactive gases. To follow path 227, the substrate will be exposed to (or "see") purge gas port 255, vacuum port 245, first reactive gas port 225, vacuum port 245, purge gas port 255, vacuum port 245, second gas port 235, and vacuum port 245. Therefore, in Figure 5 At the end of path 227 shown, the substrate has been exposed to a first reactive gas 225 and a second reactive gas 235 to form a layer. The injector unit 222 shown is formed in the shape of a quarter circle, but may be larger or smaller. Figure 6 The gas distribution assembly 220 shown can be considered as four Figure 4 The injector units 222 are connected in series.

[0046] Figure 5 The injector unit 222 shows a gas curtain 250 separating the reactive gases. The term "gas curtain" is used to describe any combination of gas streams or vacuum that separates reactive gases so that they do not mix. Figure 5The gas curtain 250 shown includes a portion of the vacuum port 245 alongside the first reactive gas port 225, a central purge gas port 255, and a portion of the vacuum port 245 alongside the second gas port 235. This combination of gas flow and vacuum can be used to prevent or minimize gas phase reactions of the first and second reactive gases.

[0047] Referring to Figure 6 , the combination of gas flow from the gas distribution assembly 220 and vacuum separates the process regions 350. The process regions are roughly defined by the gas curtains 250 between 350 around the individual gas ports 225, 235. Figure 6 The embodiment shown is composed of eight separated process regions 350 with eight separating gas curtains 250 therebetween. The processing chamber can have at least two process regions. In certain embodiments, there are at least three, four, five, six, seven, eight, nine, ten, eleven, or twelve process regions.

[0048] During processing, the substrate can be exposed to more than one process region 350 at any given time. However, the portion of the substrate exposed to different process regions will have a gas curtain separating the two process regions. For example, if the leading edge of the substrate enters a process region including the second gas port 235, the middle portion of the substrate will be under a gas curtain 250 and the trailing edge of the substrate will be in a process region including the first reactive gas port 225.

[0049] A factory interface 280 (shown in Figure 4 ) is depicted as connected to the processing chamber 200, which can be, for example, a load lock chamber. A substrate 60 is depicted overlapping the gas distribution assembly 220 to provide a frame of reference. The substrate 60 can typically be positioned on a susceptor assembly to be held near the front surface 221 of the gas distribution plate 220. The substrate 60 can be loaded into the processing chamber 200 through the factory interface 280 onto the substrate support or susceptor assembly (see Figure 4 ). The substrate 60 can be depicted as disposed within a process region because the substrate is positioned adjacent to the first reactive gas port 225 and between two gas curtains 250a, 250b. Rotating the substrate 60 along the path 227 will move the substrate counterclockwise around the processing chamber 200. Thus, the substrate 60 will be exposed to the first process region 350a through the eighth process region 350h, including all the process regions therebetween.

[0050] Certain embodiments of the present disclosure are directed to a processing method including a processing chamber 200 having a plurality of process regions 350a-350h, each process region separated from an adjacent region by a gas curtain 250. For example, Figure 6The processing chamber shown. Depending on the gas flow configuration, the number of gas curtains and process zones within the processing chamber can be any suitable number. Figure 6 The embodiment shown has eight gas curtains 250 and eight process zones 350a-350h.

[0051] Referring back to Figure 1 The processing platform 100 includes a processing chamber 140 connected to the second side 112 of the central transfer station 110. The processing chamber 140 of certain embodiments is configured to expose the wafer to a process to treat the wafer before and / or after processing in the first batch of processing chambers 120. The processing chamber 140 of certain embodiments comprises an anneal chamber. The anneal chamber can be a furnace anneal chamber or a rapid thermal anneal chamber, or a different chamber configured to hold the wafer at a predetermined temperature and pressure and provide a gas flow to the chamber.

[0052] In certain embodiments, the processing platform further comprises a second batch of processing chambers 130 connected to the third side 113 of the central transfer station 110. The second batch of processing chambers 130 can be configured in a similar manner to the batch of processing chambers 120, or the second batch of processing chambers 130 can be configured to perform a different process or to process a different number of substrates.

[0053] The second batch of processing chambers 130 can be the same as or different from the first batch of processing chambers 120. In certain embodiments, the first batch of processing chambers 120 and the second batch of processing chambers 130 are configured to perform the same process on the same number of wafers in the same batch time, such that x (the number of wafers in the first batch of processing chambers 120) is the same as y (the number of wafers in the second batch of processing chambers 130), and the first batch time is the same as the second batch time (of the second batch of processing chambers 130). In certain embodiments, the first batch of processing chambers 120 and the second batch of processing chambers 130 are configured to have one or more of a different number of wafers (x is not equal to y), a different batch time, or both.

[0054] In Figure 1 In the embodiment shown, the processing platform 100 includes a second processing chamber 150 connected to the fourth side 114 of the central transfer station 110. The second processing chamber 150 can be the same as or different from the processing chamber 140.

[0055] The processing platform 100 can include a controller 195 connected to the robot 117 (connection not shown). The controller 195 can be configured to move wafers between the pre-clean chamber 140 and the first batch processing chamber 120 using the first robot arm 118 of the robot 117. In some embodiments, the controller 195 can also be configured to move wafers between the second single wafer processing chamber 150 and the second batch processing chamber 130 using the second robot arm 119 of the robot 117.

[0056] The processing platform 100 can also include a first buffer station 151 connected to the fifth side 115 of the central transfer station 110, and / or a second buffer station 152 connected to the sixth side 116 of the central transfer station 110. The first buffer station 151 and the second buffer station 152 can perform the same or different functions. For example, the buffer stations can hold cassettes of wafers that are processed and returned to the original cassettes, or the first buffer station 151 can hold unprocessed wafers and move the wafers to the second buffer station 152 after processing. In some embodiments, one or more of the buffer stations are configured to pre-process, pre-heat, or clean wafers before and / or after processing.

[0057] In some embodiments, the controller 195 is configured to move wafers between the first buffer station 151 and one or more of the processing chambers 140 and the first batch processing chamber 120 using the first robot arm 118 of the robot 117. In some embodiments, the controller 195 is configured to move wafers between the second buffer station 152 and one or more of the second processing chambers 150 or the second batch processing chamber 130 using the second robot arm 119 of the robot 117.

[0058] The processing platform 100 can also include one or more slit valves 160 between the central transfer station 110 and any of the processing chambers. In the illustrated embodiment, there is a slit valve 160 between each of the processing chambers 120, 130, 140, 150 and the central transfer station 110. The slit valves 160 can be opened and closed to isolate the environment within the processing chambers from the environment within the central transfer station 110. For example, if a processing chamber is to generate a plasma during processing, closing the slit valve of the processing chamber can help prevent stray plasma from damaging the robot in the transfer station.

[0059] In some embodiments, the process chambers are not easily removed from the central transfer station 110. To perform maintenance on any of the process chambers, each process chamber can further include a plurality of access doors 170 on the sides of the process chamber. The access doors 170 allow manual access to the process chamber without removing the process chamber from the central transfer station 110. In the illustrated embodiment, each side of each process chamber (except the side connected to the transfer station) has an access door 170. Including so many access doors 170 can complicate the construction of the process chambers employed, as the hardware within the chamber can need to be configured to be accessible through the doors.

[0060] The process platform of some embodiments includes a water tank 180 connected to the transfer chamber 110. The water tank 180 can be configured to provide coolant to any or all of the process chambers. Although referred to as a "water" tank, those skilled in the art will appreciate that any coolant can be used.

[0061] In some embodiments, the process platform 100 is sized to allow connection to house power via a single power connector 190. The single power connector 190 is attached to the process platform 100 to provide power to each of the process chambers and the central transfer station 110.

[0062] The process platform 100 can be connected to a factory interface 102 to allow loading of wafers or cassettes of wafers into the platform 100. A robot 103 within the factory interface 102 can move wafers or cassettes into or out of the buffer stations 151, 152. Wafers or cassettes can be moved within the platform 100 by the robot 117 in the central transfer station 110. In some embodiments, the factory interface 102 is a transfer station of another cluster tool.

[0063] One or more embodiments of the present disclosure are directed to methods of depositing a film. See Figures 7A to 7C A substrate 700 having a first substrate surface 701 and a second substrate surface 702 can be provided. The first substrate surface 701 and the second substrate surface 702 can be different materials (e.g., silicon and silicon oxide), or can be the same material with different surface terminations (e.g., -H and -OH).

[0064] In some embodiments, the first substrate surface 701 comprises silicon. In some embodiments, the first substrate surface 701 consists essentially of silicon. In some embodiments, the first substrate surface 701 has a hydrogen termination.

[0065] In some embodiments, the second substrate surface 702 comprises silicon oxide. In some embodiments, the second substrate surface 702 consists essentially of silicon oxide. In some embodiments, the second substrate surface 702 has a hydroxyl termination.

[0066] The first substrate surface 701 and the second substrate surface 702 can be any suitable surface for selective deposition. In certain embodiments, the first substrate surface 701 comprises a silicon surface with Si-H groups, and the second substrate surface 702 comprises a silicon oxide surface with -OH groups and with or without native oxide. In certain embodiments, the second substrate surface 702 comprises a dielectric surface with -OH end groups and with or without native oxide, and the first substrate surface 701 comprises a metal surface.

[0067] If either or both of the first substrate surface 701 and the second substrate surface 702 have native oxide present, removing the native oxide can allow for a more efficient selective deposition process. Exposing the substrate 100 to an etching process can remove the native oxide from the affected surface. The etching process can be a wet etching process (e.g., exposure to dilute HF (1%)), or a dry etching process (e.g., exposure to a plasma). In certain embodiments, the etching process is a plasma-based process. In certain embodiments, the plasma-based etching process comprises exposing the substrate to a plasma of ammonia and hydrofluoric acid.

[0068] In certain embodiments, removing the native oxide from the affected surface can provide a surface that is substantially only hydrogen terminated. As used in this manner, the term "substantially only hydrogen terminated" means that greater than or equal to about 98% of the surface area of the surface is terminated with hydrogen. In certain embodiments, removing the native oxide from the surface can provide a surface that is substantially no oxygen terminated. As used in this manner, the term "substantially no oxygen terminated" means that the surface terminations include less than about 2% of the surface area including oxygen atoms.

[0069] In one or more embodiments, the process for removing the native oxide from the surface also oxidizes other surfaces, thereby providing a surface that is substantially no hydrogen terminated. As used in this manner, the term "substantially no hydrogen terminated" means that for less than or equal to about 2% of the surface area, the surface terminations of the surface are hydrogen.

[0070] As Figure 7BAs illustrated, a film 710 is formed on the first substrate surface 701 in a manner that is selective over the second substrate surface 702. The use of "in a manner that is selective over" in this manner means that the film is preferentially formed or deposited on the subject surface, such that the film is preferentially formed on the first substrate surface 701 and not on the second substrate surface 702. For example, the thickness of the film 710 formed on the first substrate surface 701 can be greater than or equal to 20, 30, 40, or 50 times the thickness of the film formed on the second substrate surface 702.

[0071] The film 710 can be formed by any suitable technique, including, but not limited to, atomic layer deposition. In certain embodiments, the film 710 can be formed in a batch processing chamber, such as the batch processing chamber 300 shown in FIG. 3. For example, the film 710 can be formed by sequential exposure to a silicon precursor and a reactant. Figures 2 to 6 The silicon precursor can be any suitable silicon precursor, including, but not limited to, a halogenated silicon and a halogen-containing or halogen-free organosilicon compound. In one or more embodiments, the silicon precursor includes bis(trichlorosilyl)methane. In certain embodiments, the silicon precursor includes more than one silicon atom arranged with at least one carbon separating the silicon atoms. For example, the silicon precursor can have two silicon atoms separated by a methylene unit.

[0072] The reactant can be any suitable reactant, including, but not limited to, a nitrogen- donating species, an oxygen-donating species, and / or a carbon-donating species. In certain embodiments, the reactant includes ammonia.

[0073] The film 710 formed is a function of the silicon precursor and the reactant. In certain embodiments, the film includes one or more of SiC or SiCN. In certain embodiments, the film formed includes silicon carbonitride. Those skilled in the art will appreciate that the name silicon carbonitride or SiCN does not imply a specific chemical dosage; but only that the elements that make up the bulk of the film. In certain embodiments, the film can be doped with one or more of B, As, or P in an amount of up to about two percent on an atomic basis.

[0074] In a batch processing chamber, the substrate can be exposed to the silicon precursor and the reactant in alternating process zones of the processing chamber. See FIG. 3, for example, where process zones 350a, 350c, 350e, 350g can expose the substrate surface to the silicon precursor, while process zones 350b, 350d, 350f, 350h can expose the substrate surface to the reactant, such that each rotation of the substrate around the processing chamber can expose the substrate surface to four cycles of silicon precursor / reactant. Figure 6

[0075] ​The film 710 can be deposited to a predetermined amount. In certain embodiments, the film is deposited to a thickness in a range from about to about or a thickness in a range from about to about In certain embodiments, the film can be deposited to a thickness greater than or equal to about or to a thickness less than or equal to about or After a period of time, the film can begin to deposit on the second surface even though a barrier or passivation layer (not shown) can be present. To increase the thickness of the film and maintain selectivity, the barrier or passivation layer can be replenished periodically.

[0076] The film 710 can be formed at any suitable temperature. In certain embodiments, the film 710 can be formed at a temperature in a range from about 200 °C to about 600 °C, or in a range from about 250 °C to about 550 °C, or in a range from about 300 °C to about 500 °C. In certain embodiments, the film is formed by a thermal process without plasma exposure. In certain embodiments, the film is formed by a plasma enhanced process.

[0077] The deposited film can have film properties that can be optimized or improved by a post-deposition treatment. For example, a deposited silicon carbon nitride film can have a high wet etch rate. The wet etch rate of the deposited film can be improved by exposing the film to a post-deposition treatment. In certain embodiments, the treatment improves the quality of the film. In certain embodiments, the improved quality of the film includes one or more of the following: wet etch rate, refractive index, density, hydrogen concentration, leakage current, breakdown voltage, dielectric constant, or stress.

[0078] The film 710 can have a composition that is changed as part of the treatment process. The change in film composition can be related to a change in the quality or properties of the film. The film 710 has an initial nitrogen content, an initial oxygen content, and an initial carbon content. In certain embodiments, the initial oxygen content is substantially zero. The term "substantially zero" when used in this manner means that the content of the film is less than or equal to about 1%, 0.5%, or 0.1% of the element (e.g., oxygen) on an atomic basis.

[0079] The treatment process of certain embodiments includes exposing the film to a vapor anneal process to form an annealed film, and at least one film property of the film is improved after the vapor anneal. The vapor anneal can occur in any suitable environment, at any suitable temperature and pressure. As Figure 7C illustrated, the film can be treated with a vapor anneal to form an annealed film 720. The annealed film 720 has an annealed nitrogen content, an annealed oxygen content, and an annealed carbon content.

[0080] In certain embodiments, the vapor anneal can occur at a substrate temperature in a range from about 150 °C to about 600 °C, or in a range from about 200 °C to about 500 °C, or in a range from about 250 °C to about 450 °C. In certain embodiments, the vapor anneal can occur at a temperature greater than or equal to about 150 °C, 200 °C, 250 °C, 300 °C, 350 °C, or 400 °C.

[0081] In certain embodiments, the vapor anneal can occur at a pressure in a range from about 20 T to about 100 T, or in a range from about 30 T to about 90 T, or in a range from about 40 T to about 80 T, or in a range from about 50 T to about 75 T. In certain embodiments, the pressure of the vapor anneal process depends on the process used.

[0082] In certain embodiments, the vapor anneal occurs in an anneal furnace. In certain embodiments, the pressure of the anneal furnace is in a range from about 400 T to about 850 T, or in a range from about 450 T to about 800 T, or in a range from about 500 T to about 760 T, or in a range from about 550 T to about 650 T. In certain embodiments, the partial pressure of water vapor in the anneal furnace can be greater than or equal to about 100 T, 200 T, 300 T, 400 T, 500 T, or 600 T. In certain embodiments, the partial pressure of water vapor in the anneal furnace is about 585 Torr.

[0083] In certain embodiments, the vapor anneal includes heating an ampoule containing water and flowing water vapor from the ampoule to a process chamber. The ampoule temperature of certain embodiments is in a range from about 25 °C to about 80 °C, or in a range from about 25 °C to about 70 °C, or in a range from about 20 °C to about 50 °C. In certain embodiments, the ampoule is heated to a temperature greater than or equal to about 30 °C, 35 °C, 40 °C, 45 °C, 50 °C, or 55 °C.

[0084] A carrier gas can carry the water vapor from the ampoule to the process chamber. The carrier gas is typically an inert gas, but can also be a reactive gas. In certain embodiments, the carrier gas includes one or more of argon, hydrogen, nitrogen, helium, xenon, krypton, CO, C02, NO, or N02. In certain embodiments, the flow rate of the carrier gas can be in a range from about 300 seem to about 5000 seem, or in a range from about 400 seem to about 4000 seem.

[0085] In certain embodiments, the formed film comprises SiCN, and the vapor anneal converts the SiCN to SiOC. In certain embodiments, the vapor anneal process converts substantially all of the SiCN to SiOC. As used in this regard, the term "converts substantially all" means that greater than or equal to about 90%, 95%, 98%, or 99% of the subject composition is converted.

[0086] In certain embodiments, the annealed film 720 has an annealed nitrogen content that is less than or equal to the initial nitrogen content. In certain embodiments, the annealed nitrogen content is less than or equal to about 50%, 40%, 30%, 20%, or 10% of the initial nitrogen content. In certain embodiments, the anneal reduces the nitrogen content to substantially zero. In certain embodiments, the annealed nitrogen content is less than or equal to about 1%, 0.5%, or 0.1% on an atomic basis.

[0087] In certain embodiments, the annealed film 720 has an annealed carbon content that is about the same as the initial carbon content. In certain embodiments, the annealed carbon content is within ±20%, 15%, 10%, 5%, 2%, or 1% of the initial carbon content. It is unexpected that the carbon content of the film would decrease as a result of the vapor anneal process. The fact that about the same carbon content is maintained after the vapor anneal process is unexpected. In certain embodiments, the annealed carbon content is in the range of about 5% to about 15% on an atomic basis, or in the range of about 6% to about 14%, or in the range of about 7% to about 13%, or in the range of about 8% to about 12%, or in the range of about 9% to about 11%.

[0088] The film can be formed in the same processing chamber as the vapor anneal or in a different processing chamber. For example, Figure 6 A batch processing chamber of the type shown in FIG. 1 can be used for both film formation and vapor anneal. In one or more embodiments, the film can be formed by sequential exposure to a silicon precursor and a reactant in different process regions 250. Once the film thickness has been formed, the reactive gases (i.e., the silicon precursor and the reactant) can be stopped, and a vapor can be flowed into the process region 250. The pedestal can be stopped or can continue to rotate throughout the anneal process. In certain embodiments, the vapor anneal occurs in an anneal furnace that is distinct from the deposition chamber. For example, see Figure 1 , the film can be deposited in a first batch processing chamber 120, and the vapor anneal can occur in an anneal furnace located at processing chamber 140.

[0089] In certain embodiments, the properties of the film are improved after the vapor anneal. In certain embodiments, the vapor annealed film has a wet etch rate (in 1% HF) that is less than or equal to about / minute, / minute, / minute, or / minute. The wet etching rate can be measured at the second full minute of etching (i.e., from the 61st to the 120th second into the etching process). In some embodiments, the dielectric constant of the vapor-annealed film is less than or equal to about 6.0, 5.9, 5.8, 5.7, 5.6, 5.5, 5.4, 5.3, 5.2, 5.1, 5.0, 4.9, 4.8, or 4.7.

[0090] Some embodiments of this disclosure relate to methods for depositing conformal films on a substrate. Please refer to... Figures 8A to 8C A substrate 800 is provided for processing. As used herein, the term "provide" means placing the substrate 800 in a location or environment for depositing one or more films on the substrate 800. The substrate 800 has a substrate surface 802 in which a plurality of features 804 are formed. Each feature 804 extends a distance D from the substrate surface 802. Each feature 804 has a bottom 806 and at least one sidewall 808. If the feature is cylindrical, then there is a sidewall 808; however, in a cross-sectional view (e.g.) Figure 8A The cross-sectional view shown appears to have two sidewalls 808. The number of sidewalls 808 is not limited to the scope of this disclosure, and any shape of feature 804 with any number of sidewalls 808 may be used.

[0091] The distance D by which feature 804 extends from surface 802 can be any suitable distance. The ratio of distance D to the width of feature 14 is called aspect ratio. In some embodiments, feature 14 has a high aspect ratio greater than or equal to about 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, or 50:1. In some embodiments, the feature has a low aspect ratio less than or equal to about 9:1, 8:1, 7:1, 6:1, 5:1, 4:1, 3:1, or 2:1.

[0092] Regarding the formation of feature 804, Figures 8A to 8C The substrate 800 illustrated has right angles. Those skilled in the art will understand that this is merely representative of an exemplary embodiment, and feature 804 does not necessarily have square corners. The shape of feature 804 may not have a distinguishable bottom, and the sidewalls may be angled relative to the normal to the substrate surface, thereby forming a V-groove or through-hole.

[0093] The substrate 800 of certain embodiments is part of a V-NAND device. The illustrated feature 804 is shown as a recess in a monolithic material, causing the bottom 806 and sidewall 808 to be made of the same material. In certain embodiments, the feature is formed from alternating layers of different materials, causing the first material to be shorter than the second material to form the recess shape. In such systems, the bottom of the feature is formed from the first material, and the sidewall of the feature is formed from the higher second material. For example, a V-NAND structure composed of alternating layers of silicon oxide and silicon nitride films.

[0094] Figure 8B The substrate 800 is shown after deposition of a conformal film 810. The conformal film has an initial carbon content, an initial oxygen content, and an initial nitrogen content. Figure 8C The substrate 800 is shown after vapor annealing to form an annealed film 820. As described above, the annealed film 820 has an annealed carbon content, an annealed nitrogen content, and an annealed oxygen content.

[0095] In certain embodiments, the conformal film 810 has a thickness in a range from about to about In certain embodiments, the conformal film 810 has a thickness in a range from about to about , or in a range from about to about , or in a range from about to about , or in a range from about to about , or in a range from about to about , or about

[0096] The annealing process is expected to have a greater effect on the top of the film 810 than on the lower portion of the film. Surprisingly, however, the annealing process is found to affect the film in a uniform manner to a depth of about or more. The annealed conformal film 820 of certain embodiments has a substantially uniform composition of carbon, nitrogen, and oxygen. When used in this manner, the term "substantially uniform composition" means that the composition of the film does not vary by more than about 10, 5, 2, or 1% with respect to depth in the film. For example, the composition of the film at a depth of about is substantially identical to the composition of the film at a depth of about .

[0097] See, for example, Figure 1In certain embodiments, the controller 195 has one or more configurations or executable programs stored on a readable medium. In certain embodiments, the controller 195 includes one or more circuits, processors, input / output devices, transient memories (i.e., random access memories), non-transient memories (i.e., hard disks), and / or connections to hardware components. In certain embodiments, the controller 195 has at least one configuration selected from the following configurations: a first configuration to move a substrate to a batch chamber; a second configuration to provide a plurality of process gases to the batch chamber to deposit a film on the substrate in the batch chamber; a third configuration to move the substrate from the batch chamber to a vapor anneal chamber; a fourth configuration to heat the vapor anneal chamber to an anneal temperature; a fifth configuration to provide a water vapor flow to the vapor anneal chamber; or a sixth configuration to remove the substrate from the vapor anneal chamber. These configurations can include any commands or functions to control flow, gas valves, rotation, movement, heating, cooling, or to perform other processes for various configurations.

[0098] Examples

[0099] A silicon carbon nitride film was deposited on a silicon substrate by sequential exposure to bis(trichlorosilyl)methane and ammonia. The SiCN film was exposed to a vapor anneal process. Approximately 1000 A of SiCN was deposited, followed by an anneal at 500°C, 75T, 600 seem water amp push flow for one hour. The effect of water amp temperature on film properties is listed in Table 1.

[0100] Table 1

[0101]

[0102]

[0103] It was observed that the wet etch rate and dielectric constant decreased as the water dose increased (i.e., higher amp temperature). The wet etch rate was measured at the second whole minute of exposure to the etchant (1% HF).

[0104] A SiCN film was deposited and exposed to a furnace anneal under different conditions to form a SiOC film. The results are listed in Table 2.

[0105] Table 2

[0106]

[0107] * In-situ anneal occurred in the same batch chamber as the deposition.

[0108] The atomic composition of the film SiOC film is listed in Table 3.

[0109] Table 3 ​

[0110]

[0111] According to one or more embodiments, the substrate is subjected to processing prior to and / or after forming the layer. This processing can be performed in the same chamber, or in one or more separate processing chambers. In certain embodiments, the substrate is moved from the first chamber to a separate second chamber for further processing. The substrate can be moved directly from the first chamber to the separate processing chamber, or the substrate can be moved from the first chamber to one or more transfer chambers and then to the separate processing chamber. Accordingly, the processing apparatus can include a plurality of chambers in communication with a transfer station. Such apparatus can be referred to as a "cluster tool" or a "clustered system," among others.

[0112] Generally, a cluster tool is a modular system including a plurality of chambers that can perform various functions, including substrate center finding and orientation, gas removal, annealing, deposition, and / or etching. According to one or more embodiments, a cluster tool includes at least a first chamber and a central transfer chamber. The central transfer chamber can house a robot that can transfer substrates between processing chambers and load lock chambers. The transfer chamber is typically maintained under vacuum conditions and provides an intermediate stage for transferring substrates from one chamber to another, and / or to a load lock chamber located at the front end of the cluster tool. Two well-known cluster tools that can be suitable for use with the present application are the CENTURA® and the ENDURA® and both available from Applied Materials, Inc., of Santa Clara, Calif. However, the actual arrangement and combination of chambers can be varied in order to perform the particular steps of the processes described herein. Other processing chambers that can be used include, but are not limited to, cyclic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etch, pre-clean, chemical clean, thermal treatment (e.g., RTP), plasma nitridation, gas removal, orientation, hydroxylation, and other substrate processes. By performing the processes in the chambers on the cluster tool, surface contamination of the substrate by atmospheric impurities can be avoided without the need for oxidation prior to deposition of a subsequent film.

[0113] According to one or more embodiments, the substrate remains under vacuum or "load lock" conditions and is not exposed to ambient air when moving from one chamber to the next. The transfer chamber is thus under vacuum and is "pumped down" under vacuum pressure. Inert gas can be present in the processing chamber or the transfer chamber. In certain embodiments, an inert gas is used as a purge gas to remove some or all of the reactants. According to one or more embodiments, a purge gas is injected at the exit of the deposition chamber to prevent reactants from moving from the deposition chamber to the transfer chamber and / or additional processing chambers. Thus, an inert gas flow forms a curtain at the chamber exit.

[0114] A substrate can be processed in a single substrate deposition chamber, where a single substrate is loaded, processed, and unloaded before another substrate is processed. Substrates can also be processed in a continuous fashion (similar to a conveyor system), where multiple substrates are independently loaded into a first portion of the chamber, moved through the chamber, and unloaded from a second portion of the chamber. The shape of the chamber and associated conveyor system can form a straight path or a curved path. Further, the processing chamber can be a carousel, where multiple substrates are moved around a central axis and exposed to deposition, etching, annealing, cleaning, etc. processes throughout the carousel path.

[0115] During processing, the substrate can be heated or cooled. Such heating or cooling can be accomplished by any suitable means, including, but not limited to, changing the temperature of the substrate support and flowing heated or cooled gas to the substrate surface. In certain embodiments, the substrate support includes a heater / cooler that can be controlled to conductively change the temperature of the substrate. In one or more embodiments, the gas being applied (whether a reactive gas or an inert gas) can be heated or cooled to locally change the temperature of the substrate. In certain embodiments, a heater / cooler can be disposed within the chamber adjacent to the substrate surface to convectively change the temperature of the substrate.

[0116] During processing, the substrate can also be stationary or rotated. Rotating the substrate can be continuous or segmented. For example, the substrate can be rotated throughout the entire process, or the substrate can be rotated in small amounts between exposures to different reactive or purge gases. Rotating the substrate during processing (whether continuously or segmented) can help produce more uniform deposition or etching by, for example, minimizing the effects of local variability in the gas flow geometry.

[0117] Reference throughout this specification to "one embodiment", "certain embodiments", "one or more embodiments" or "an embodiment" means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. Thus, the appearances of the phrases such as "in one or more embodiments", "in certain embodiments", "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily referring to the same embodiment. Furthermore, the particular features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments.

[0118] While the application herein has been illustrated by a description of the embodiments thereof, it is clear that modifications and variations can be made by persons skilled in the art in light of the teachings of the present disclosure. It is therefore understood that changes can be made in the form, details, and / or proportions of any of the elements disclosed herein without departing from the spirit and scope of the application. What is claimed is:

Claims

1. A processing platform, comprising: A central transfer station, including multiple sides and robots housed within the central transfer station; A batch processing chamber is connected to one side of the central transfer station; A steam annealing chamber is connected to one side of the central transfer station; as well as A controller, coupled to the central transfer station, the batch processing chamber, and the vapor annealing chamber, is configured to include: a first configuration for moving a substrate to the batch processing chamber; a second configuration for supplying multiple process gases to the batch processing chamber to form a conformal film on the substrate in the batch processing chamber; a third configuration for moving the substrate from the batch processing chamber to the vapor annealing chamber; a fourth configuration for heating the vapor annealing chamber to an annealing temperature; a fifth configuration for supplying a steam stream to the vapor annealing chamber; and a sixth configuration for removing the substrate from the vapor annealing chamber, wherein the conformal film comprises SiCN having an initial carbon content, an initial nitrogen content, and an initial oxygen content. The carbon content after steam annealing in the steam annealing chamber is within ±10% of the initial carbon content.

2. The processing platform of claim 1, wherein heating the steam annealing chamber to the annealing temperature reduces the initial nitrogen content to the nitrogen content after annealing, and increases the initial oxygen content to the oxygen content after annealing.

3. The processing platform of claim 2, wherein the nitrogen content after annealing is less than or equal to 1% on an atomic basis.

4. The processing platform of claim 1, wherein the carbon content after annealing is 10% on an atomic basis.

5. The processing platform of claim 1, wherein the conformal membrane has the following characteristics: to The thickness is within the range.

6. The processing platform of claim 5, wherein the conformal film is annealed and has a substantially homogeneous composition of carbon, nitrogen and oxygen, wherein a substantially homogeneous composition means that the composition of the conformal film varies by no more than 10% relative to the depth in the conformal film.

7. The processing platform of claim 6, wherein the annealed conformal film has the following properties: to The thickness is within the range.

8. The processing platform of claim 7, wherein the annealed conformal film has a concentration of less than [value missing] in diluted HF for the first minute. Wet etching rate per minute.

9. The processing platform of claim 7, wherein the annealed conformal film has a size less than or equal to 1.5 x 10⁻⁶. -7 A / cm 2 Leakage current.

10. The processing platform of claim 7, wherein the annealed conformal film has a dielectric constant of less than 5.

11. The processing platform of claim 1, wherein the step of forming the conformal film comprises: The substrate is sequentially exposed to silicon precursors and reactants.

12. The processing platform of claim 11, wherein the silicon precursor comprises bis(trichlorosilyl)methane, and the reactant comprises ammonia.

13. The processing platform of claim 1, wherein the formation of the conformal film and the vapor annealing occur in the same processing chamber.

14. The processing platform of claim 1, wherein the formation of the conformal film occurs in an atomic layer deposition chamber, while vapor annealing occurs in a furnace.

15. The processing platform of claim 1, wherein the conformal film is annealed in the vapor annealing chamber at a temperature in the range of 300°C to 600°C.

16. The processing platform of claim 15, wherein the conformal membrane is annealed at a partial pressure of water vapor greater than or equal to 500 Torr.

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