Method and device for processing copper wire doped with high conductivity material and modified copper wire

Abstract

This application provides a method, apparatus, and modified copper wire for doping with a high-conductivity material. The method includes the following steps: S1, heating the surface of the copper wire using a heat source to melt localized areas and form pits; S2, injecting a high-conductivity material into the pits, mixing the high-conductivity material with the molten copper material in the pits to fill them; S3, cooling and solidifying the molten copper material in the pits, thereby integrating the high-conductivity material into the copper wire. This solution facilitates the formation of an integrated composite structure on the surface of the copper wire and significantly improves the durability and stability of the copper conductor.

Description

Technical Field

[0001] The present invention relates to the technical field of laser processing, and in particular to a method and device for processing copper wire doped with high-conductivity material, and a modified copper wire. Background Art

[0002] Copper has excellent electrical conductivity. Copper wire replaces aluminum wire as the main winding material for electric motors used in new energy vehicles. For example, the windings used in round wire stators and flat wire stators all use copper wire.

[0003] At present, copper wires used in motors still have problems such as high power loss rate. Silver plating on the copper surface is usually a method to increase the conductivity of copper wires. However, the traditional silver plating method has problems such as limited silver layer thickness, complex process, and low surface flatness; and the adhesion between the silver layer and the copper wire surface is insufficient, which is prone to delamination and falling off after bending. Summary of the invention

[0004] The purpose of the present invention is to overcome or at least alleviate the deficiencies of the above-mentioned prior art and to provide a method and device for processing copper wire doped with high conductivity material and a modified copper wire.

[0005] In a first aspect, the present invention provides a method for processing a copper wire doped with a high conductivity material, comprising the following steps:

[0006] S1, heating the surface of the copper wire using a heating source to melt a local portion of the surface of the copper wire and form a pit;

[0007] S2, injecting a high-conductivity material into the pit, so that the high-conductivity material is mixed with the molten copper material in the pit to fill the pit;

[0008] S3, cooling and solidifying the molten copper material in the pits, so that the high conductivity material is doped into the copper wire.

[0009] In at least one embodiment, in S1, the surface of the copper wire is heated by a heating source under the protection of an inert gas; and / or, in S2, a high conductivity material is injected into the pit by a gas flow of an inert gas.

[0010] In at least one embodiment, in S2, at least one pair of injectors is used to emit high conductivity material into the pits, and the two injectors in the pair are symmetrically arranged on both sides of the heating source along the circumference of the copper wire.

[0011] In at least one embodiment, the incident direction of the heating source toward the copper wire is perpendicular to the center line of the copper wire, and the angle between the injection direction of the injector and the incident direction of the heating source is 15°-75°.

[0012] In at least one embodiment, the heating source is a laser emitter, and the laser emitter and the ejector are adjacent to the incident point on the surface of the copper wire, and the copper wire can move along its length.

[0013] In at least one embodiment, in S1 and S2, a high conductivity material is emitted into the pits by an injector, the injector and the heating source are fixed in position, the copper wire can move along the length direction, and the number and / or depth of the pits on the surface of the copper wire can be adjusted by adjusting the moving speed of the copper wire.

[0014] In at least one embodiment, when the cross section of the copper wire is circular, the copper wire is synchronously rotated during the movement of the copper wire along the length direction. Alternatively, the copper wire is not rotated during the movement of the copper wire along the length direction, and the ejector and the heating source are synchronously rotated around the center line of the copper wire.

[0015] When the cross section of the copper wire is square, the four sides of the copper wire are heated separately to form pits.

[0016] In at least one embodiment, in S1 and S2, the copper wire is placed in a heat preservation environment, and the temperature of the heat preservation environment is set to prevent the pits on the surface of the copper wire from cooling down to a molten state within a set time.

[0017] In at least one embodiment, the step S20 is further included between S2 and S3, in which the surface of the copper wire is flattened to remove the high-conductivity material protruding from the pits, so that the surface of the copper wire is a smooth surface.

[0018] In a second aspect, the present invention provides a processing device for copper wire doped with high conductivity material, which is used to implement the processing method for copper wire doped with high conductivity material in the first aspect, comprising a heating source, an injector and a pulling device. The heating source is used to heat the surface of the copper wire and form a pit at a local position on the surface of the copper wire. The injector is used to inject the high conductivity material into the pit. The pulling device is used to drive the copper wire to move along the length direction.

[0019] In a third aspect, the present invention provides a modified copper wire made by the copper wire doping high conductivity material processing method of the first aspect, the modified copper wire comprises a copper wire body, the surface of the copper wire body has a plurality of pits, and the pits are filled with high conductivity material.

[0020] The beneficial effects of one or more of the above technical solutions are:

[0021] (1) In this scheme, a heating source is used to form a molten pit on the surface of the copper wire. A high-conductivity material is injected into the pit while it is in a molten state, so that the high-conductivity material can be fully mixed with the molten copper material in the pit. Finally, the molten copper material and the high-conductivity material are cooled and solidified simultaneously. First, in this setting, the high-conductivity material is doped into the surface of the copper wire, which can make full use of the skin effect of the current and make the improvement of the conductivity of the copper wire more obvious. Secondly, the molten copper material in the pit can physically fuse the high-conductivity material into the surface of the copper wire to form an integrated structure, which can significantly improve the durability and stability of the wire and avoid delamination and shedding during bending.

[0022] (2) In this scheme, S1 uses a heating source to heat the surface of the copper wire under the protection of an inert gas;

[0023] And / or, in S2, the high conductivity material is injected into the pit by using a gas flow of an inert gas. This arrangement using an inert gas can prevent oxidation of the copper wire when it is melted.

[0024] (3) In this solution, at least one pair of ejectors is used to eject the high-conductivity material into the pit, and the two ejectors are symmetrically arranged on both sides of the heating source along the circumference of the copper wire. This arrangement ensures that the gas flow rate ejected from the pair of ejectors is the same, and the two streams of high-conductivity material can collide with each other to reduce kinetic energy, thereby depositing the high-conductivity material in the pit without splashing out of the pit due to excessive kinetic energy.

[0025] (4) In this solution, the incident direction of the heating source toward the copper wire is perpendicular to the center line of the copper wire, and the angle between the ejection direction of the ejector and the incident direction of the heating source is 15°-75°. Within the above angle range, the high-conductivity material will not overflow from the pit due to the action of the airflow because the angle is too small, nor will part of the high-conductivity material be unable to enter the pit because the angle is too large.

[0026] (5) In this scheme, the laser emitter and the injector are adjacent to each other at the incident point on the copper wire surface, and the copper wire can move along its own length. When the laser emitter heats the copper wire surface to form a pit, the high conductivity material is immediately injected into the pit before the pit cools down. This setting can avoid the problem that the high conductivity material is not easily doped with the copper material in the groove after the copper wire is melted and cooled. In addition, there will be no problem of inconsistent filling amount of high conductivity material in each pit due to differences in cooling rate, and the conductivity of each part of the copper wire doped with conductive material can be made the same.

[0027] (6) In this solution, the positions of the ejector and the heating source are fixed, and the copper wire can move along the length direction. The number and / or depth of the pits on the surface of the copper wire can be adjusted by adjusting the moving speed of the copper wire. In this setting, the working parameters of the heating source and the ejector can remain constant, and pits with different parameters can be processed by adjusting the moving speed of the copper wire. The problem of not being able to process the required copper wire due to the extreme value of the parameter range of the heating source itself will not occur.

[0028] (7) In this scheme, when the cross section of the copper wire is circular, the copper wire is synchronously rotated while it moves along the length direction; or, the copper wire does not rotate while it moves along the length direction, and the injector and the heating source synchronously rotate around the center line of the copper wire. This arrangement facilitates the formation of spiral pits on the surface of the copper wire, and the high-conductivity material filled in the pits also has a spiral structure, so as to increase the uniformity of doping of the high-conductivity material on the surface of the copper wire.

[0029] When the cross section of the copper wire is square, the copper wire is a flat wire structure, and pits are formed by heating the four sides of the copper wire respectively; this arrangement facilitates increasing the uniformity of doping high conductivity materials on the surface of the copper wire and improving the conductive effect of the copper wire.

[0030] (8) In this scheme, the surface of the copper wire is smoothed before the copper wire and the high-conductivity material are simultaneously cooled and solidified. This setting method can make the surface of the copper wire smooth and avoid the problem that the height of the pit part is higher than the rest of the part after doping with the high-conductivity material, which makes the wire rougher. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 1 is a schematic flow chart of a method for processing copper wire doped with a high conductivity material according to an embodiment of the present invention;

[0032] Figure 2 is an isometric schematic diagram of a processing device for doping copper wire with a high conductivity material according to an embodiment of the present invention;

[0033] Figure 3 is a schematic side view of a processing device for doping copper wire with a high conductivity material according to an embodiment of the present invention;

[0034] Figure 4 Schematic diagram of continuous arrangement of pits on the surface of a copper wire in an embodiment of the present invention;

[0035] Figure 5 Schematic diagram of the dispersed arrangement of pits on the surface of the copper wire in an embodiment of the present invention;

[0036] Figure 6 1 is a schematic diagram of a structure of a modified copper wire in an embodiment of the present invention;

[0037] Figure 7is another structural schematic diagram of the modified copper wire in an embodiment of the present invention;

[0038] Figure 8 Schematic diagram of another structure of the modified copper wire in the embodiment of the present invention.

[0039] List of reference numerals: 10, copper wire; 20, pit; 30, high conductivity material; 40, heating source; 50, injector; 60, sleeve; 70, mounting base. DETAILED DESCRIPTION

[0040] The exemplary embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood that these specific descriptions are only used to teach those skilled in the art how to implement the present invention, and are not intended to exhaust all possible modes of the present invention, nor to limit the scope of the present invention.

[0041] like Figure 1-Figure 7 As shown, this embodiment provides a method for processing copper wire doped with high conductivity material, comprising the following steps:

[0042] S1 , using a heating source 40 to heat the surface of the copper wire 10 , so that a local position of the surface of the copper wire 10 melts and forms a pit 20 .

[0043] S2 , injecting the high-conductivity material 30 into the pit 20 , so that the high-conductivity material 30 is mixed with the molten copper material in the pit 20 to fill the pit 20 .

[0044] S3 , cooling and solidifying the molten copper material in the pit 20 , so that the high conductivity material 30 is doped into the copper wire 10 .

[0045] Specifically, the heating source 40 can be a laser emitter, or a device such as a welding head that can melt the surface of the copper wire 10 in a short time. In this embodiment, the high conductivity material 30 is a material with a higher conductivity than copper, such as silver, graphene or carbon nanotubes. When the high conductivity material is silver, it can be injected into the pit in the form of solid powder or liquid. When the high conductivity material is graphene or carbon nanotubes, it can be injected into the pit in the form of solid powder.

[0046] like Figure 4 As shown, in this embodiment, the heating source 40 forms a continuous pit 20 along the length direction of the copper wire 10 on the surface of the copper wire 10, and the pit 20 can be regarded as a continuous groove. When the pit 20 is continuous along the surface of the copper wire 10, the high conductivity material in the pit 20 will not be disconnected along the length direction of the copper wire 10, thereby ensuring that the conductivity will not suddenly change during the flow of current along the high conductivity material 30, thereby improving the conductive effect of the wire and reducing electrical loss.

[0047] like Figure 5As shown, in some other embodiments, the pits 20 formed by the heating source 40 on the surface of the copper wire 10 are a plurality of discretely distributed pits 20. The plurality of pits 20 are independently distributed on the outer surface of the copper wire 10, and the high conductivity materials in the adjacent pits 20 will be blocked by the copper wire 10, which will cause the intermittent rise and fall of the surface conductivity of the copper wire 10. However, in the case where the pits 20 are dispersedly arranged, the shedding of the high conductivity material in a single pit 20 will not affect the conductivity of the high conductivity material in the remaining pits, which is convenient for increasing the stability when the high conductivity material is doped into the copper wire.

[0048] In this embodiment, the cross-section of the pit 20 along the length direction of the vertical copper wire 10 is a circular, square, trapezoidal or other different shapes, which can be set by those skilled in the art.

[0049] Specifically, a molten pit 20 is formed at a local position on the surface of the copper wire 10 due to the heating of the heating source 40, and molten copper material exists in the pit 20. At this time, the high-conductivity material flows to the pit and falls into the molten copper material, and the two are mixed. Therefore, after the molten copper material in the pit 20 cools down, the copper material and the high-conductivity material 30 are solidified synchronously.

[0050] In this embodiment, in S1, the surface of the copper wire 10 is heated by a heating source 40 under the protection of an inert gas; and / or, in S2, a high conductivity material 30 is injected into the pit 20 by a gas flow of an inert gas. The inert gas may be nitrogen or argon, etc., and the inert gas is used to prevent the copper wire 10 from oxidizing when it is melted. Specifically, in S1, if the surface of the copper wire 10 is heated in an inert gas environment, there is no oxygen at the pit 20 in the molten state at this time, and oxidation will not occur. In S2, the time interval between the injection of the high conductivity material 30 and the formation of the pit 20 is short. When the molten material at the position of the pit 20 is about to be oxidized, the oxygen can be discharged by the inert gas shot into the pit 20, thereby preventing the copper wire 10 from oxidizing at the position of the pit 20.

[0051] In this embodiment, in S2, at least one pair of injectors 50 is used to inject the high conductivity material 30 into the pit 20, and the two injectors 50 are symmetrically arranged on both sides of the heating source 40 along the circumference of the copper wire 10. Figure 2 and Figure 3 In this embodiment, there are two injectors 50 and a single heating source 40. In other embodiments, there are multiple heating sources 40, and two injectors 50 are configured at each heating source 40. In this arrangement, multiple heating sources 40 simultaneously form pits 20 at different positions around the copper wire 10, and simultaneously use the injectors 50 to inject the high conductivity material 30, which is convenient for improving the efficiency of pit 20 forming and high conductivity material doping and recombination.

[0052] In this embodiment, the incident direction of the heating source 40 toward the copper wire 10 is perpendicular to the center line of the copper wire 10, and the angle between the injection direction of the injector 50 and the incident direction of the heating source 40 is 15°-75°. Figure 3 , the incident line of the heating source 40 is L2, the ejection direction of the ejector 50 is L1, and the angle α between L1 and L2 is 15 degrees to 75 degrees. Specifically, the angle α between the two can be 15 degrees, 50 degrees or 75 degrees, etc., which can be set by those skilled in the art.

[0053] In this embodiment, the heating source 40 is a laser emitter, the focal position of the laser emitter and the incident point of the injector 50 on the surface of the copper wire 10 are adjacent, and the copper wire 10 can move along its own length direction. At this time, when the copper wire 10 moves along its own length direction, the pit 20 just formed on the outer surface of the copper wire 10 by the heating source 40 can be immediately moved to the incident point of the adjacent injector 50 to inject the high conductivity material 30. This setting can prevent the pit 20 from cooling and solidifying before the high conductivity material 30 is injected. Preferably, the focal position of the laser emitter and the injector 50 can be adjacent in space to reduce the difficulty of the adjacent incident points of the two.

[0054] As a specific processing parameter, in this embodiment, the depth of the pit 20 is 0.1 mm, the distance between the emitting end of the laser emitter and the surface of the copper wire 10 is 5 mm, and the power of the laser emitter is 200 W. In some other embodiments, the depth of the pit 20 can also be 0.015 or 0.2 mm, the distance between the laser emitter and the surface of the copper wire 10 is 4 mm or 6 mm, and the power of the laser emitter is 180 W or 220 W.

[0055] In this embodiment, in S1 and S2, an ejector 50 is used to eject a high-conductivity material 30 into the pit 20. The ejector 50 and the heating source 40 are fixed in position, and the copper wire 10 can move along the length direction. The number and / or depth of the pits 20 on the surface of the copper wire 10 can be adjusted by adjusting the moving speed of the copper wire 10. Specifically, the parameters of the laser emitter (laser head) can be constant, which is equivalent to the laser being constantly point-to-point or line-scanning. In this way, the required copper wire 10 will not be unable to be processed due to the parameter range limitations of the laser emitter itself. At the same time, this method also improves the processing efficiency. A set of laser emitters and ejection devices can cope with the processing requirements of copper wires 10 with different parameters. Among them, the pulse frequency of the laser emitter is 5kHz-50kHz, and the travel speed of the copper wire 10 is 0.1m / min-50m / min.

[0056] In this embodiment, when the cross-section of the copper wire 10 is circular, the copper wire 10 is synchronously rotated during the movement of the copper wire 10 along the length direction. Alternatively, the copper wire 10 does not rotate during the movement of the copper wire 10 along the length direction, and the injector 50 and the heating source 40 rotate synchronously around the center line of the copper wire 10. At this time, the pit 20 is a spiral line on the round copper wire 10, and there is a section of the pit 20 on any cross-section of the copper wire perpendicular to its own length direction, and each section is the same size. The pit is doped with high conductivity materials, and the electrical conductivity of the copper wire 10 is more uniform at various locations after processing. If the copper wire or the heating source does not rotate, there will be a large difference in the electrical conductivity of each position in the circumferential direction of the copper wire, which is not conducive to the application of the copper wire 10 in the motor.

[0057] In this embodiment, the copper wire 10 in S1 and S2 is arranged in a heat preservation environment, and the temperature of the heat preservation environment is set to: it can prevent the surface pits 20 of the copper wire 10 from cooling to a molten state within a set time. Specifically, the heat preservation environment can be formed by a heat preservation sleeve 60, and the copper wire 10 passes through the heat preservation sleeve 60. The heating source 40 and the injector 50 are arranged in the sleeve 60 so that the side wall of the sleeve 60 can hinder the heat dispersion at the heating source 40 and the pit 20, and avoid the pit 20 from cooling too fast. In some other embodiments, the inner ring of the sleeve 60 is surrounded by a heating resistance wire, and the heating resistance wire surrounds the pit 20 to be injected with the high conductivity material 30. The use of a heat preservation environment can ensure that the copper material at the laser melting position of the copper wire 10 is in a molten state before the high conductivity material 30 is injected, and there will be no uneven amount of conductive material doped into each pit 20 of the copper wire 10 due to cooling. Specifically, the thermal insulation sleeve 60 may be made of materials such as aluminum silicate or rock wool.

[0058] In some other embodiments, if the cross section of the copper wire 10 is square, for example, the copper wire is a flat wire, laser melting treatment is performed on all four sides of the flat wire. The melting treatment process is preferably a synchronous treatment, which can be point scanning or line scanning, and the four laser heads are on the same cross section. In this way, the conductivity of each surface of the copper wire 10 on the cross section can be consistent. The depth of the pit 20 or the depth of the surface of the copper wire 10 treated by melting can be 0.01mm-2mm.

[0059] In this embodiment, step S20 is further included between S2 and S3 to flatten the surface of the copper wire 10 and remove the high conductivity material 30 protruding from the pit 20, so that the surface of the copper wire 10 is smooth.

[0060] Specifically, in S20, the flattening process flattens the surface copper solution coating the high-conductivity material 30 to make the surface of the copper wire 10 smooth. Optionally, the flattening process is achieved by a mold or roller pressing method, and the shape of the inner surface of the mold is the same as the shape of the outer peripheral surface of the copper wire 10. The surface of the copper wire 10 can be flattened by extrusion of the mold. Rolling controls the outer dimensions of the flat copper wire 10 by the spacing between two sets of rollers, so that the surface of the copper wire 10 becomes smooth and flat, and the high-conductivity material 30 is evenly distributed on the surface of the copper wire 10.

[0061] This embodiment also provides a processing device for copper wire doped with high conductivity material, which is used to implement the above-mentioned processing method for copper wire doped with high conductivity material, including a heating source 40, an injector 50, a support structure and a traction device. The heating source 40 is used to heat the surface of the copper wire 10 and form a pit 20 at a local position on the surface of the copper wire 10. The injector 50 is used to inject the high conductivity material 30 into the pit 20. The support structure is used to support the heating source 40 and the injector 50. The traction device is used to drive the copper wire 10 to move along the length direction.

[0062] See also Figure 2-Figure 3 , the supporting structure here is a sleeve 60 with a circular cross-section, and the sleeve 60 is supported by a mounting seat 70. The side wall of the sleeve 60 has a plurality of mounting holes that penetrate through it, and the mounting holes can be used to install the injector 50 and the heating source 40 such as the laser emitter. Specifically, one end of the laser emitter is outside the sleeve 60 to connect the power cord, and the other end is inserted into the inner cavity of the sleeve 60 to emit laser to the copper wire 10. One end of the injector 50 having an injection nozzle is arranged in the inner cavity of the sleeve 60 to emit the high conductivity material 30 to the pit 20. The end of the injector 50 away from the injection nozzle is arranged outside the sleeve 60 to receive the high conductivity material.

[0063] Specifically, the ejector 50 is connected to a high temperature reactor storing liquid high conductivity material, and the high temperature reactor is connected to a high pressure gas source, which squeezes the liquid in the high temperature reactor to the ejector 50. The ejector 50 is also connected to an inert gas, and the inert gas is mixed with the liquid high conductivity material 30 in the ejector 50.

[0064] Specifically, the traction device here may be a reel or a traction roller, which can be set by those skilled in the art.

[0065] This embodiment also provides a modified copper wire, which is made by the above-mentioned copper wire doping high conductivity material processing method. The modified copper wire 10 includes a copper wire body, and the surface of the copper wire body has a plurality of pits 20, and the pits 20 are filled with high conductivity material 30.

[0066] See also Figure 6As a specific structural form, the cross section of the copper wire body is circular, and the copper wire body has a plurality of pits 20 along the circumference, and the pits 20 are filled with long strips of high conductivity material 30. Figure 7 In another specific structural form, the surface of the copper wire 10 has a spirally wound pit 20, and the high conductivity material 30 is also spirally wound outside the copper wire 10. The modified copper wire 10 here can also adopt a combination of pits 20 and high conductivity materials 30 in other structural forms, which can be set by those skilled in the art.

[0067] See also Figure 8 In another specific structural form, the cross-section of the copper wire is square and the copper wire is in the shape of a flat wire. Continuous pits are arranged on each side of the copper wire, and a mixture of copper material and high conductivity material is sintered in the pits.

[0068] Of course, the present invention is not limited to the above-mentioned embodiments. Those skilled in the art may make various combinations and modifications to the above-mentioned embodiments of the present invention under the guidance of the present invention without departing from the scope of the present invention.

Claims

1. A method for processing copper wire doped with high conductivity material, characterized in that: The following steps are involved: S1, using a heating source to heat the surface of the copper wire, so that a local position of the surface of the copper wire melts and forms a plurality of discretely distributed pits, wherein molten copper material exists in the pits; the heating source is a laser emitter; S2, injecting a high-conductivity material into the pit using an injector, the focusing position of the laser emitter is adjacent to the incident point of the injector on the surface of the copper wire, so that the newly formed pit on the surface of the copper wire can be immediately moved to the adjacent incident point of the injector, and the injected high-conductivity material is mixed with the molten copper material in the pit, and the molten copper material in the pit physically fuses and dopes the high-conductivity material into the surface layer of the copper wire to fill the pit; the high-conductivity material is graphene or carbon nanotubes, which are injected into the pit in the form of solid powder; S3, cooling and solidifying the molten copper material in the pit, so that the high conductivity material is doped into the copper wire; In S1 and S2, the copper wire can move along the length direction, and the number and / or depth of the pits on the surface of the copper wire can be adjusted by adjusting the moving speed of the copper wire; When the cross-section of the copper wire is circular, the copper wire is rotated synchronously while moving along the length direction, or the copper wire does not rotate while moving along the length direction, and the injector and the heating source rotate synchronously around the center line of the copper wire; when the cross-section of the copper wire is square, the four sides of the copper wire are heated separately to form pits.

2. The method for processing copper wire doped with high conductivity material according to claim 1, characterized in that: In S1, under the protection of inert gas, the surface of the copper wire is heated by a heating source; And / or, in S2, the high conductivity material is injected into the pit using a gas flow of an inert gas.

3. The method for processing copper wire doped with high conductivity material according to claim 1, characterized in that: In S2, at least one pair of injectors is used to emit high conductivity material to the pits, and the two paired injectors are symmetrically arranged on both sides of the heating source along the circumference of the copper wire.

4. The method for processing copper wire doped with high conductivity material according to claim 3, characterized in that: The incident direction of the heating source toward the copper wire is perpendicular to the center line of the copper wire, and the angle between the injection direction of the injector and the incident direction of the heating source is 15°-75°.

5. The method for processing copper wire doped with high conductivity material according to claim 1, characterized in that: Also included between S2 and S3: S20, smoothing the surface of the copper wire, removing the high-conductivity material protruding from the pit, so that the surface of the copper wire is a smooth surface.

6. A processing device for copper wire doped with high conductivity material, used to implement the processing method for copper wire doped with high conductivity material as claimed in any one of claims 1 to 5, characterized in that: include: A heating source is used to heat the surface of the copper wire and form a pit at a local position of the surface of the copper wire; The heating source is a laser emitter; an injector for injecting a high conductivity material into the pit; Traction equipment, used to drive the copper wire to move along its length; The processing device can realize the processing of copper wire doped with high conductivity material. The following steps are involved: S1, using a heating source to heat the surface of the copper wire, so that a local position of the surface of the copper wire melts and forms a plurality of discretely distributed pits, wherein molten copper material exists in the pits; the heating source is a laser emitter; S2, injecting a high-conductivity material into the pit using an injector, the focusing position of the laser emitter is adjacent to the incident point of the injector on the surface of the copper wire, so that the newly formed pit on the surface of the copper wire can be immediately moved to the adjacent incident point of the injector, and the injected high-conductivity material is mixed with the molten copper material in the pit, and the molten copper material in the pit physically fuses and dopes the high-conductivity material into the surface layer of the copper wire to fill the pit; the high-conductivity material is graphene or carbon nanotubes, which are injected into the pit in the form of solid powder; S3, cooling and solidifying the molten copper material in the pit, so that the high conductivity material is doped into the copper wire; In S1 and S2, the copper wire can move along the length direction, and the number and / or depth of the pits on the surface of the copper wire can be adjusted by adjusting the moving speed of the copper wire; when the cross-section of the copper wire is circular, the copper wire is synchronously rotated during the movement of the copper wire along the length direction, or the copper wire does not rotate during the movement of the copper wire along the length direction, and the injector and the heating source are synchronously rotated around the center line of the copper wire; when the cross-section of the copper wire is square, the four sides of the copper wire are heated separately to form pits.

7. A modified copper wire, produced by the method for treating copper wire doped with a high conductivity material according to any one of claims 1 to 5, characterized in that: The invention comprises a copper wire body, the surface of which is provided with a plurality of pits, and the pits are filled with a high-conductivity material.

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