Ceramic base
By forming multiple concentric circle patterns and avoidance pattern areas in the heating body pattern of the ceramic base, the problem of uneven substrate temperature caused by traditional ceramic base is solved, and higher temperature uniformity and higher process yields are achieved .
Patent Information
- Application Number
- CN202310938409.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2022-08-18
- Filing Date
- 2023-07-27
- Publication Date
- 2025-02-07
- Estimated Expiration
- 2043-07-27
AI Technical Summary
The heating body pattern of traditional ceramic bases causes uneven substrate temperature due to the presence of holes, and there is a cooling zone, which affects the yield of semiconductor processes.
By forming a plurality of concentric circular patterns in the heating body pattern of the ceramic base, including an arc portion and a folded portion, and providing protrusions and connecting members in the avoidance pattern area, the heating body is patterned in the avoidance hole, so as to The heat generated per unit area is maintained around the holes as the normal pattern area.
Effectively remove the cooling zone on the ceramic substrate, improve temperature uniformity, ensure that the temperature of the substrate in the semiconductor process reaches the specified level, and improve the process yield.
Smart Images

Figure CN117594534B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a ceramic susceptor, and more particularly to a ceramic susceptor to which a heater pattern for improving temperature uniformity is applied. Background Art
[0002] Typically, a semiconductor device or display device is manufactured by stacking multiple thin film layers including a dielectric layer and a metal layer in sequence on a glass substrate, a flexible substrate or a semiconductor wafer substrate, and then patterning. These thin film layers are sequentially deposited on the substrate by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. The CVD process includes a low pressure chemical vapor deposition (LPCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, an organic metal chemical vapor deposition (MOCVD) process, and the like. A ceramic base is configured in such a CVD device and a PVD device, and the ceramic base is used to support a glass substrate, a flexible substrate, a semiconductor wafer substrate, and the like, and to generate a specified amount of heat or a high frequency signal for generating plasma. For precision processes such as fine wiring of semiconductor devices, the ceramic base is widely used in processes such as plasma deposition according to the requirements of precise temperature control and heat treatment, and is used for plasma formation or substrate heating in the etching process of a thin film layer formed on a semiconductor wafer substrate or the firing process of a photoresist.
[0003] A common ceramic base includes a heating element for a heater function disposed between ceramic materials. In the ceramic base structure, when the heating element receives power and generates heat to heat a semiconductor wafer substrate, etc., in order to improve the yield through a stable semiconductor process, the temperature uniformity of the substrate is very important.
[0004] Figure 1 This is an example of a pattern of a heating element of a conventional ceramic base.
[0005] Reference Figure 1A hole 30 is usually formed on the surface of the plate of the ceramic base. The hole is used to supply cooling gas for cooling the substrate, or to lift and lower the lifting pins for lifting the substrate, or to install a temperature sensor (such as a thermocouple (TC)). The hole 30 can be a through hole or a non-through hole that passes through the plate and extends to the surface of the plate. Due to defects on the surface of the plate (such as the hole 30), the two heating element patterns 40a and 40b extend in parallel, and a folded portion 40c is formed so as not to pass through the hole 30.
[0006] However, in the case of the heating element pattern 40 of the conventional ceramic base, since there are many blank spaces around the hole 30 where no pattern is formed, the heat generation per unit area may differ depending on the position, thereby causing the following problems: there is a problem of causing uneven substrate temperature, such as a cooling zone (Cool-zone) where the temperature of the substrate is reduced around the hole 30. This problem makes it difficult to ensure temperature uniformity above a prescribed level required for the substrate mounted on the ceramic base during the semiconductor process, and if the process is an etching process, the etching rate may be uneven due to differences based on the position of the substrate, thereby seriously reducing the yield. Summary of the invention
[0007] Technical problem to be solved by the invention
[0008] Therefore, the present invention is completed to solve the above-mentioned problems, and the purpose of the present invention is to provide a ceramic base, wherein, by forming a heating element pattern for a heater function, the heat generation per unit area in the avoidance pattern area is the same as the heat generation per unit area in the normal pattern area in the area without holes, thereby removing the cooling zone (Cool-zone) of the substrate mounted on the ceramic base, and improving the temperature uniformity. The avoidance pattern area is an area where the heating element is patterned in the form of an avoidance hole, and the hole is a hole for supplying cooling gas for cooling the substrate, or for the lifting operation of the lifting pin for lifting the substrate, or for installing a temperature sensor (such as a thermocouple (TC)).
[0009] Means for solving technical problems
[0010] First, the features of the present invention are summarized as follows: a ceramic base according to one aspect of the present invention for achieving the above-mentioned purpose includes a ceramic plate having one or more holes and being provided with a heating element, the heating element including a plurality of concentric circle patterns, and each concentric circle pattern includes an arc portion extending in a circumferential direction and a folding portion connecting the arc portions, and in the plurality of concentric circle patterns, a portion of the arc portions opposing each other and in which the hole is located may have a protrusion protruding toward the hole.
[0011] The protrusion may include a protruding member and a connecting member, wherein the connecting member is extended toward the hole to connect with both ends of the protruding member.
[0012] Among the plurality of concentric circle patterns, the concentric circle patterns facing each other and having the hole therein may include a folded portion connecting both ends of two arc portions.
[0013] The protruding member may be formed to be recessed toward the outside of the hole.
[0014] The folded portion connecting both ends of the two arc portions may be formed to be recessed toward the outside of the hole.
[0015] The heating element may be configured in the form of a single heating zone connected to one power terminal pair to generate heat.
[0016] The heating element may also be configured in the form of a plurality of heating zones in which different specified areas are independently connected to different power terminal pairs to generate heat.
[0017] The holes may include holes for supplying a cooling gas for cooling the substrate on the ceramic plate, for an elevating operation of an elevating pin for elevating the substrate, or for mounting a temperature sensor.
[0018] A ceramic base according to another aspect of the present invention for achieving the above-mentioned purpose comprises a ceramic plate, the ceramic plate having more than one hole and being provided with a heating element, the heating element comprising a plurality of concentric circle patterns, each of the concentric circle patterns comprising an arc portion extending in a circumferential direction and a folded portion connecting the arc portions, the plurality of concentric circle patterns comprising a first arc portion and a second arc portion, the first arc portion and the second arc portion being opposite to each other and the hole being located between the first arc portion and the second arc portion, the first arc portion having a first protrusion protruding toward the hole, and the second arc portion having a first protrusion protruding toward the hole A second protrusion protruding toward the hole, each of the first protrusion and the second protrusion comprises: a protruding member; and a connecting member extending toward the hole and connected to both ends of the protruding member, the protruding member being separated from the hole by a specified distance, and among the multiple concentric circle patterns, the concentric circle patterns facing each other and having the hole located therein comprise a folding portion connecting both ends of two arc portions, the folding portion connecting both ends of the two arc portions being separated from the hole by a specified distance, and the specified distance between the protruding member and the hole is the same as the specified distance between the folding portion and the hole.
[0019] Effects of the Invention
[0020] In the ceramic base according to the present invention, by applying a heating element pattern for a heater function, the heat generation per unit area in an avoidance pattern area is equal to the heat generation per unit area in a normal pattern area in an area without holes, thereby removing a cooling zone of a substrate mounted on the ceramic base, and improving temperature uniformity. The avoidance pattern area is an area having a heating element pattern arranged around a hole in a manner of avoiding the hole. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] To help understanding of the present invention, the accompanying drawings, which are included as a part of the detailed description, provide embodiments of the present invention and, together with the detailed description, explain the technical concept of the present invention.
[0022] Figure 1 It is a cross-sectional schematic diagram of a traditional ceramic base.
[0023] Figure 2 FIG. 4 is a cross-sectional schematic diagram of a ceramic base according to an embodiment of the present invention.
[0024] Figure 3 It is a plan view for explaining a heating element pattern of a ceramic base according to an embodiment of the present invention.
[0025] Figure 4 It is a drawing enlarging the avoidance pattern area of the heating element pattern of the ceramic base according to an embodiment of the present invention.
[0026] Figure 5 It is a drawing for explaining a plurality of heating zones of a heating element pattern of a ceramic base according to an embodiment of the present invention.
[0027] Figure 6 It is a comparison example of the heat amount per unit area in actual design examples of the heating element pattern area in the normal pattern area of the present invention (normal area (Normal Area) (present invention)), the traditional hole periphery heating element pattern area (hole area (Hole Area) (prior art)), and the heating element pattern area in the hole periphery avoidance pattern area of the present invention (hole area (Hole Area) (present invention)).
[0028] Description of Reference Numerals
[0029] 110: Ceramic plate
[0030] 114: Heater
[0031] 90: Hole
[0032] AA: Normal pattern area
[0033] BB: Avoid pattern area DETAILED DESCRIPTION
[0034] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. At this time, the same components in each drawing are represented by the same figure numerals as much as possible. In addition, the description of known functions and / or structures will be omitted. The content disclosed below will mainly describe the parts required for understanding the operation of various embodiments, and the description of elements that may make the main points of the description unclear will be omitted. In addition, some of the components in the drawings may be enlarged, omitted or schematically shown. The size of each component cannot fully reflect the actual size, and therefore, the content recorded here is not limited by the relative size or spacing of the components shown in each drawing.
[0035] When describing the embodiments of the present invention, if it is judged that the specific description of the known technology related to the present invention will unnecessarily obscure the main idea of the present invention, the detailed description thereof will be omitted. In addition, the terms described below are terms defined in consideration of the functions of the present invention, and may vary according to the intentions or precedents of the user or operator. Therefore, their definitions should be interpreted based on the content of the entire specification. The terms used in this specification are used only to illustrate the embodiments of the present invention and are not intended to be limiting. Unless otherwise specified, a single form of expression should include multiple forms of expression. Expressions such as "including" or "having" in this specification are used to refer to any feature, number, step, action, component or combination thereof, and should not be understood as excluding the existence or additional possibility of one or more other features, numbers, steps, actions, components or combinations thereof.
[0036] In addition, although the terms "first" and "second" can be used to describe various components, the components are not limited by the terms. The terms are only used to distinguish one component from another component.
[0037] Figure 2 FIG. 1 is a schematic cross-sectional view of a ceramic base 100 according to an embodiment of the present invention.
[0038] Reference Figure 2 According to an embodiment of the present invention, a ceramic base 100 includes a ceramic plate 110 and a shaft 120 .
[0039] The ceramic susceptor 100 according to an embodiment of the present invention is a semiconductor device that supports a processing target substrate (e.g., a semiconductor wafer substrate, a glass substrate, a flexible substrate, etc.) for various purposes and heats the processing target substrate at a predetermined temperature. The ceramic susceptor 100 can be used in semiconductor processes using plasma, such as plasma enhanced chemical vapor deposition.
[0040] The ceramic plate 110 can be configured such that a high-frequency electrode 112 for plasma generation and / or a heating element 114 for substrate heating are arranged (buried) between ceramic materials at a predetermined interval. The ceramic plate 110 can stably support the substrate to be processed, and can heat the substrate using the heating element 114 and / or can perform a semiconductor process using the plasma of the high-frequency electrode 112. The ceramic plate 110 can be a plate-like structure having a predetermined shape. As an example, the ceramic plate 110 can be formed into a circular plate-like structure, but is not necessarily limited thereto. The ceramic material can be Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, autoclaved lightweight concrete (AlC), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, B x C y At least one of BN, SiO2, SiC, yttrium aluminum garnet (YAG), mullite, and AlF3, preferably aluminum nitride (AlN). Further, the ceramic powder may be selectively included in an amount of about 0.1% to 10%, preferably about 1% to 5% of yttrium oxide.
[0041] The shaft body 120 is joined or bonded to the lower surface of the ceramic plate 110 in a pipe shape having a through hole. The shaft body 120 may be formed of the same ceramic material as the ceramic plate 110 and joined or bonded thereto.
[0042] The high-frequency electrode 112 can be made of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN) or an alloy thereof, preferably, it can be made of molybdenum (Mo). The high-frequency electrode 112 can be connected to a radio frequency (RF) power supply or to a ground wire through a connecting rod 121 built into the shaft 120. The high-frequency electrode 112 has a mesh structure of a wire type or a sheet type. Among them, the mesh structure is a grid-like structure formed by a plurality of metals arranged in a first direction and a plurality of metals arranged in a second direction interlaced with each other.
[0043] The heating element 114 may be formed in the shape of a plate coil based on a heating wire (or a resistance wire), etc. Furthermore, in order to accurately control the temperature, the heating element 114 may be formed in a multilayer structure. In the semiconductor manufacturing process, the heating element 114 is connected to a power source through a connecting rod 123 built into the shaft 120, and performs the function of heating the processing object substrate on the ceramic plate 110 at a specified temperature, so as to smoothly perform a deposition process and an etching process, etc.
[0044] like Figure 3 As shown, in the ceramic base 100 according to an embodiment of the present invention, the pattern of the heating element 114 made of the heating wire (or the resistance wire) is formed in a manner that can achieve uniform temperature distribution on the upper surface of the ceramic plate 110, and in particular, the holes on the ceramic plate 110 (for supplying cooling gas for cooling the target substrate, or for lifting and lowering the lifting pin for lifting the target substrate, or for installing a temperature sensor (such as a thermocouple (TC))) (see Figure 3 In other words, in the present invention, by applying a pattern of a heating element 114 for a heater function for heating a substrate, the heat generated per unit area in the avoidance pattern area BB is the same as the heat generated per unit area in the normal pattern area AA in an area without holes, thereby eliminating the cooling zone of the substrate mounted on the ceramic base 100 and improving the temperature uniformity. The avoidance pattern area is a pattern of a heating element 114 for avoiding the holes as described above (see Figure 3 An area patterned in the manner of the reference numeral “90” in the figure.
[0045] Figure 3 FIG. 1 is a plan view for explaining a pattern of a heat generating element 114 of a ceramic base 100 according to an embodiment of the present invention.
[0046] like Figure 3 As shown, the pattern of the heat generating body 114 includes a plurality of concentric circle patterns 210 , which continuously extend along the circumference of the ceramic plate 110 in a manner of forming concentric circles.
[0047] As shown in the figure, the concentric circle pattern 210 includes an arc portion 81 and a folded portion 82 . The arc portion extends in a circumferential direction along the circumference of the ceramic plate 110 . The folded portion is used to connect multiple arc portions 81 (for example: 2) and extends continuously between the two terminals 250 , 260 . Figure 3 The case where all regions of the ceramic plate 110 are heated based on a single heater is illustrated, but the present invention is not limited thereto. Of course, the heating element 114 may be configured in the form of multiple heaters in which multiple patterns are independent of each other.
[0048] Figure 4 1 is a diagram showing an enlarged avoidance pattern area BB of the pattern of the heating element 114 of the ceramic base 100 according to an embodiment of the present invention.
[0049] Reference Figure 4The ceramic plate 110 has one or more holes 90 between the pattern of the heating element 114 (and / or the pattern of the high-frequency electrode 112), that is, it has holes for supplying cooling gas for cooling the target substrate on the ceramic plate 110, or for lifting and lowering pins for lifting the target substrate, or for installing a temperature sensor (such as a thermocouple (TC)).
[0050] The heating element 114 includes a heating element pattern of at least one normal pattern zone AA and at least one avoidance pattern zone BB.
[0051] The avoidance pattern area BB is arranged around the hole 90 and is associated with the hole 90 , and the avoidance pattern area BB is an area of the heating element pattern arranged so as to avoid the hole 90 .
[0052] The normal pattern area AA refers to the portion of the heating element pattern in the area without defects such as the hole 90, which includes the concentric circle pattern 210 in which the heating element pattern extends continuously, but is an area composed of a plurality of arc portions 81 extending in the circumferential direction without the folded portion 82. With respect to the arc portion 81, when the ceramic plate 110 is a circular plate-like structure as shown in the drawings, the heating element pattern in this area is composed of parallel arc shapes.
[0053] The heating element 114 can be configured in a single heating zone, that is, the heating element 114 is connected to a power terminal pair 250, 260 (e.g., AC or DC power supply) to generate heat. In addition, the heating element 114 can be configured in a plurality of heating zones, that is, the pattern of the heating element 114 is independently connected to different power terminal pairs according to the specified areas to generate heat.
[0054] Figure 5 1 is a diagram for explaining a plurality of heating zones of a pattern of a heating element 114 of a ceramic susceptor 100 according to an embodiment of the present invention.
[0055] Reference Figure 5 The heating element 114 pattern of the ceramic base 100 may include one or more normal pattern areas AA and one or more avoidance pattern areas BB, and the heating element 114 pattern may be configured in a plurality of heating zones, that is, the heating element patterns of one or more normal pattern areas AA and one or more avoidance pattern areas BB may be independently connected to each of the plurality of power terminal pairs 410 / 420, 430 / 440, 450 / 460 for heating. In other words, as the avoidance pattern area BB, Figure 5The first avoidance pattern area 310 is connected to the power electron pair 410 / 420, as the normal pattern area AA, the first normal pattern area 320 is connected to the power electron pair 430 / 440, as the normal pattern area AA, the second normal pattern area 330 is connected to the power electron pair 450 / 460 for heating.
[0056] The avoidance pattern area BB will be described in more detail below.
[0057] Refer again Figure 3 and Figure 4 , the avoidance pattern area BB includes a plurality of concentric circle patterns 210, the concentric circle patterns 210 include arc portions 81 and folded portions 82, the arc portions 81 continuously extend along the circumference of the ceramic plate 110 in a manner of forming concentric circles, and the folded portions are used to connect the plurality of arc portions 81, wherein, in the plurality of concentric circle patterns 210, a portion of the arc portions 81-1, 81-2 facing each other and in which the hole 90 is located is provided with protrusions 91, 92 protruding toward the hole 90. In other words, each of the protrusions 91, 92 includes an arc-shaped portion in which a portion of the arc portions 81-1, 81-2 in the circumferential direction of the concentric circles protrudes toward the hole 90.
[0058] In other words, each of the protruding parts 91, 92 includes a protruding member 91a, 92a and a connecting member 82-1, 82-2. Each protruding member 91a, 92a includes an arc-shaped portion that is recessed toward the outside of the hole as a protruding arc-shaped portion. Each connecting member 82-1, 82-2 is a portion that extends from the non-protruding portion of the arc portion 81-1, 81-2 toward the hole 90 and is connected to the protruding members 91a, 92a at both ends.
[0059] As for the plurality of protrusions 91 and 92, they are structures for making the heat generation per unit area of the avoidance pattern area no different from the heat generation per unit area in the normal pattern area AA of the area without the hole, and the protrusion members 91a and 92a are separated from the hole 90 by a predetermined distance. In other words, the arc shape of the protrusion members 91a and 92a forms a concentric circle with the hole 90, thereby making the shortest distance from any position of the protrusion members 91a and 92a to the hole 90 constant. For example, the shortest distance from the center of the protrusion members 91a and 92a to the hole 90 and the shortest distance from both ends of the protrusion members 91a and 92a to the hole 90 may be the same.
[0060] Furthermore, the avoidance pattern area BB includes a plurality of concentric circle patterns 210, wherein the concentric circle patterns 210 include arc portions 81 and folded portions 82, wherein the arc portions 81 extend continuously along the circumference of the ceramic plate 110 in a manner of forming concentric circles, and the folded portions are used to connect the plurality of arc portions 81, wherein Figure 4As shown, among the plurality of concentric circle patterns 210, one side of the concentric circle patterns facing each other and in which the hole 90 is located includes a folded portion 82-3 connecting the two ends of the two arc portions 81-3 and 81-4 in the radial direction. Also, among the plurality of concentric circle patterns 210, the other side of the concentric circle patterns facing each other and in which the hole 90 is located includes a folded portion 82-4 connecting the two ends of the two arc portions 81-5 and 81-6 in the radial direction. The folded portions 82-3 and 83-4 may be formed by being recessed toward the outer side of the hole 90.
[0061] As for the folded portions 82-3 and 82-4 bent into an arc shape, in order to make the heat generation per unit area of the avoidance pattern area no different from the heat generation per unit area in the normal pattern area AA in the area without the hole, it is separated from the hole 90 by a predetermined distance. In other words, the arc shape of the folded portions 82-3 and 82-4 forms a concentric circle with the hole 90, thereby making the shortest distance from any position of the folded portions 82-3 and 82-4 to the hole 90 constant. For example, the shortest distance from the center of the folded portions 82-3 and 82-4 to the hole 90 and the shortest distance from both ends of the folded portions 82-3 and 82-4 to the hole 90 may be the same.
[0062] In this way, the protruding members 91a, 92a and the folded portions 82-3, 82-4 formed in such a way that the hole 90 is located therein can be configured to be at the same distance from the hole 90. Based on this, as for the heating element pattern in the present invention, even around the hole 90, there is no difference in the heat generation per unit area from that in the normal pattern area AA, so that there is no cooling zone on the entire surface of the ceramic plate 110, which can improve the temperature uniformity.
[0063] Figure 6 It is a comparison example of the heat amount per unit area in actual design examples of the heating element pattern area (normal area (Normal Area) (present invention)) of the normal pattern area AA of the present invention, the traditional hole periphery heating element pattern area (hole area (Hole Area) (prior art)), and the heating element pattern area (hole area (Hole Area) (present invention) of the hole periphery avoidance pattern area BB of the present invention.
[0064] Reference Figure 6 For example, in the heating element pattern area (normal area (Normal Area) (the present invention)) of the normal pattern area AA, when an area with the same heat generation per unit area (for example: 100) is taken as a reference, in the heating element pattern area (hole area (Hole Area) (the present invention)) of the hole periphery avoidance pattern area BB of the present invention, a heat generation per unit area similar to that of the normal pattern area AA (for example: about 100) is measured.
[0065] On the contrary, in the conventional hole periphery heating element pattern area (hole area (Hole Area) (prior art)), since the length of the heating element pattern is reduced around the hole and there are more blank spaces where the heating element pattern is not formed, the difference in heat generation per unit area occurs at different positions, so that the heat generation per unit area is only 82% of the level compared with the heating element pattern area (hole area (Hole Area) (present invention)) of the hole periphery avoidance pattern area BB of the present invention. Therefore, in the conventional hole periphery heating element pattern area (hole area (Hole Area) (prior art)), there are the following problems: that is, there are problems that cause uneven substrate temperature, such as the generation of a cooling zone (Cool-zone) where the temperature of the substrate is reduced around the hole 30. This problem makes it difficult to ensure the temperature uniformity above the specified level required for the substrate mounted on the ceramic base during the semiconductor process, and if the process is an etching process, the etching rate may be uneven due to differences based on the position of the substrate, thereby seriously reducing the yield.
[0066] As described above, in the ceramic base 100 according to the present invention, the heating element pattern is formed in a manner that does not have a cooling zone even around the hole 90 and can improve temperature uniformity. In other words, in the present invention, by applying a heating element 114 pattern for a heater function so that the heat generated per unit area in the avoidance pattern area BB is the same as the heat generated per unit area in the normal pattern area AA in an area without a hole, the cooling zone of the substrate mounted on the ceramic base 100 is removed, and the temperature uniformity can be improved. The avoidance pattern area is an area where the heating element 114 is patterned in a manner to avoid the hole 90 as described above.
[0067] For example, in Figure 6 In the example, as shown in Table 1 below, the measured temperature difference in the heating element pattern area (hole area (Hole Area) (present invention)) of the hole periphery avoidance pattern area BB of the present invention is small, for example, the maximum is +0.3°C, thereby confirming that the temperature uniformity is high, but the measured temperature difference in the traditional hole periphery heating element pattern area (hole area (Hole Area) (prior art)) is large, for example, the maximum is -0.9°C, which shows that a cooling zone (Cool-zone) has appeared.
[0068] [Table 1]
[0069] temperature Hole Area (Prior Art) Hole area (present invention) average 100℃ 99.6℃ Issue point 99.1℃ 99.9℃ Temperature difference -0.9℃ +0.3℃
[0070] As described above, in the present invention, specific matters such as specific constituent elements and limited embodiments and drawings have been described, but this is only provided to help understand the present invention as a whole, and the present invention is not limited to the embodiments, and ordinary technicians in the field to which the present invention belongs can make various modifications and changes within the scope of the essential features of the present invention. Therefore, the subject matter of the present invention should not be limited to the described embodiments, and all technical ideas that are equivalent to or equivalent to the claims, except for the attached claims, should be interpreted as included in the scope of the present invention.
Claims
1. A ceramic base, wherein: The ceramic plate comprises a ceramic plate having more than one hole and a heating element, The heating element includes a plurality of concentric circle patterns. Each concentric circle pattern includes an arc portion extending along the circumferential direction and a folded portion connecting the arc portions. The plurality of concentric circle patterns include a first arc portion and a second arc portion, the first arc portion and the second arc portion are opposite to each other and the hole is located between the first arc portion and the second arc portion, the first arc portion has a first protrusion protruding toward the hole, and the second arc portion has a second protrusion protruding toward the hole, Each of the first protrusion and the second protrusion comprises: protruding members; and a connecting member extending toward the hole and connected to both ends of the protruding member, The protruding member is spaced a predetermined distance from the hole, Among the plurality of concentric circle patterns, the concentric circle patterns facing each other and having the hole therein comprise a folded portion connecting both ends of two arc portions, The folded portion connecting the two ends of the arc portions is spaced a predetermined distance from the hole. The protruding member is spaced from the hole by the same prescribed distance as the folded portion is spaced from the hole by the same prescribed distance.
2. The ceramic susceptor according to claim 1, wherein: The protruding member is formed to be recessed toward the outside of the hole.
3. The ceramic susceptor according to claim 1, wherein: The folded portion connecting the two ends of the two arc portions is recessed toward the outside of the hole.
4. The ceramic susceptor according to claim 1, wherein: The heating element is configured in the form of a single heating zone connected to one power terminal pair to generate heat.
5. The ceramic susceptor according to claim 1, wherein: The heating element is arranged in a plurality of heating zones in which the heating elements are independently connected to different power supply terminal pairs according to different specified areas to generate heat.
6. The ceramic susceptor according to claim 1, wherein: The holes include holes for supplying cooling gas for cooling the substrate on the ceramic plate, holes for lifting and lowering pins for lifting and lowering the substrate, or holes for installing a temperature sensor.
Citation Information
Patent Citations
Ceramic heater having a resistant heater element
US20040108308A1