A semiconductor device and a method of fabricating the same

Abstract

The application provides a semiconductor device and a manufacturing method thereof, which can realize the segmentation of the conductive substrate by etching or etching, or directly deposit the conductively separated conductive substrates by using a patterned electroplating method to realize the pre-segmentation of the conductive substrate at the wafer end. Based on this, after the sub-semiconductor unit array is prepared subsequently, cutting and splitting are not needed any more, and a series of problems such as expensive machine, low cutting efficiency, wafer warping, cutting edge wire drawing, metal particle pollution and the like in the subsequent conductive substrate cutting process are avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a semiconductor device and a method for manufacturing the same. Background Technology

[0002] Semiconductor devices are ubiquitous in today's society, and semiconductor manufacturers are constantly seeking to improve the performance of their products. Vertical semiconductor devices, in particular, involve transferring the semiconductor epitaxial layer onto a second substrate using a lift-off process. This avoids a series of problems inherent in the original substrate (such as GaAs or sapphire substrates), including light absorption, non-conductivity, poor heat dissipation, and poor mechanical properties. Typically, this second substrate is a doped semiconductor conductive substrate such as Si, Ge, GaP, or SiC, or a metal substrate such as Mo, Gu, or CuW. The high conductivity and high thermal conductivity of conductive substrates, in particular, make vertical LED chips perform even better. However, the fabrication process of vertical semiconductor devices on conductive substrates mainly faces the following challenges:

[0003] First, metal bonding is used to bond the thin-film conductive substrate to the semiconductor epitaxial layer. However, due to the large difference in thermal expansion coefficients between metal and semiconductor materials, significant wafer warping occurs after the growth substrate is peeled off due to this thermal mismatch. This severely affects subsequent semiconductor device processes such as photolithography, etching, and deposition. Currently, this problem is mainly alleviated by temporarily bonding a temporary rigid substrate or thickening the conductive substrate to increase its mechanical strength.

[0004] Secondly, the final step is to cut the conductive substrate wafer array into individual sub-semiconductor units. This is usually done using blade mechanical cutting or ultraviolet laser cutting. The conductive substrate has good ductility, but blade cutting can cause problems such as burrs at the joints and edge wire drawing. Laser cutting uses high heat at the laser focus to vaporize or melt the metal to cut the conductive substrate, which carries risks such as thermal deformation, oxidation, and debris splashing. All of these can affect the reliability of semiconductor devices.

[0005] Then, if a conductive silicon substrate is used, the mechanical properties are very poor after the silicon substrate is thinned, resulting in a high breakage rate and very high process requirements.

[0006] In view of this, the inventor has specifically designed a semiconductor device and a method for manufacturing the same, which leads to this invention. Summary of the Invention

[0007] The purpose of this invention is to provide a semiconductor device and its fabrication method to solve the problems of wafer warping during the transfer and bonding process and metal particle contamination during the dicing process in vertical structure semiconductor devices.

[0008] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0009] A method for fabricating a semiconductor device, comprising:

[0010] S01, Provide a growth substrate;

[0011] S02. Growing an epitaxial stack, wherein the epitaxial stack includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along the surface of the growth substrate;

[0012] S03. Etch the epitaxial stack to a portion of the first type semiconductor layer to form mesa surfaces isolated from each other by trenches;

[0013] S04. Fabricate a second electrode layer, which is disposed on the mesa and forms contact with the second type semiconductor layer;

[0014] S05. Fabricate a first insulating layer, wherein the first insulating layer covers the epitaxial stack and exposes at least a portion of the surface of the second electrode layer by extending from the trench to the mesa.

[0015] S06. Fabricate a metal layer, the metal layer being embedded in the groove and covering each of the tabletops;

[0016] S07. A conductive substrate is provided, which is separately formed on the surface of the mesa;

[0017] S08. Provide a temporary carrier plate, which is bonded to the top of the platform by bonding material;

[0018] S09. Remove the growth substrate to expose the first type of semiconductor layer;

[0019] S10. The first type semiconductor layer below the trench is etched to expose the first insulating layer to form a plurality of independent sub-semiconductor units;

[0020] S11. Fabricate a second insulating layer, the second insulating layer being disposed on the exposed surface of the first type semiconductor layer and having through holes exposing at least a portion of the surface of the first type semiconductor layer corresponding to each of the sub-semiconductor units;

[0021] S12. A first electrode is deposited in each of the through holes to form a first electrode;

[0022] S13. A transition film is provided. After the first electrode is adhered to the transition film, the temporary carrier and temporary bonding material are removed to expose the conductive substrate. The surface of the conductive substrate is then adhered to the conductive film, and the transition film is removed. After spot testing of each of the sub-semiconductor units through the conductive film and the first electrode, the sub-semiconductor units are separated from each other by means of blue film expansion fracture and / or removal of each material layer corresponding to the dicing position, so as to complete the sorting of the sub-semiconductor units.

[0023] Preferably, the metal layer includes a bonding metal layer or an electroplated seed layer; the conductive substrate is in contact with the metal layer through bonding or electroplating.

[0024] Preferably, step S07 includes: forming a preset position of a cutting path above the trench through photolithography and etching processes, so that the conductive substrate is separated into independent carrier substrates corresponding one-to-one with the mesa.

[0025] Preferably, step S07 specifically includes:

[0026] S07-1. A conductive substrate is provided, and a photolithographic pattern is formed on the surface of the conductive substrate by double-sided overlay. The photolithographic pattern corresponds one-to-one with the mesa to expose the preset position of the dicing channel.

[0027] S07-2. Etching or etching is performed along the preset position of the cutting path to form the cutting path, so that the conductive substrate is separated into independent carrier substrates corresponding one-to-one with the mesa.

[0028] Preferably, step S13 specifically includes:

[0029] S13-1. Provide a transition film and adhere the first electrode to the transition film;

[0030] S13-2, Adhere the transition film to the surface of the sensing layer;

[0031] S13-3. Remove the temporary carrier and temporary bonding material to expose the conductive substrate;

[0032] S13-4. The surface of the conductive substrate is attached to the conductive film, and the sensing layer and the transition film are desorbed by the corresponding sensing source so that the first electrode faces upward, and then the sub-semiconductor units are measured point by point.

[0033] S13-5. The semiconductor device is transferred from the conductive film to the blue film, and the blue film is heated and expanded to increase the spacing between the sub-semiconductor units on the surface of the blue film. This causes the material layers corresponding to the cutting path to break and the film to be peeled off, thereby separating the sub-semiconductor units from each other.

[0034] Preferably, the sensing layer comprises any one of thermal sensing materials, ultraviolet light sensing materials, laser sensing materials, radiation sensing materials, plasma sensing materials, and microwave sensing materials.

[0035] Correspondingly, the sensing source includes a heat source, an ultraviolet light source, a laser source, a radiation source, a plasma source, or a microwave source.

[0036] As another technical solution of the present invention, after step S06, a dam is formed in the trench by photolithography.

[0037] Then, in step S07, the height of the conductive substrate is not higher than the height of the dam. After the conductive substrate is separated into independent carrier substrates corresponding one-to-one with the platform by the dam, the dam is then removed by cleaning.

[0038] Preferably, step S13 specifically includes:

[0039] S13-1. Provide a transition film and adhere the first electrode to the transition film;

[0040] S13-2, Adhere the transition film to the surface of the sensing layer;

[0041] S13-3. Remove the temporary carrier and temporary bonding material to expose the conductive substrate;

[0042] S13-4. The surface of the conductive substrate is attached to the conductive film, and the sensing layer and the transition film are desorbed by the corresponding sensing source so that the first electrode faces upward, and then the sub-semiconductor units are measured point by point.

[0043] S13-5. The semiconductor device is transferred from the conductive film to the blue film, and the blue film is heated and expanded to increase the spacing between the sub-semiconductor units on the surface of the blue film. This causes the material layers corresponding to the cutting path to break, and the film is peeled off and the dam is removed, thereby separating the sub-semiconductor units from each other.

[0044] Preferably, step S09 further includes: forming a roughened surface on the exposed surface of the first type of semiconductor layer by an etching process.

[0045] Preferably, the semiconductor device includes an LED chip, a laser device, or a solar cell device.

[0046] Preferably, the epitaxial stack comprises an InP-based, GaAs-based, or GaN-based semiconductor material functional layer.

[0047] Preferably, the second electrode layer includes a metal reflective layer.

[0048] The present invention also provides a semiconductor device which is manufactured by any of the methods described above.

[0049] As can be seen from the above technical solutions, based on the semiconductor device and its fabrication method provided by the present invention, the conductive substrate can be divided by etching or etching methods, or the conductive substrates can be directly deposited to divide each other by patterned electroplating methods, so as to achieve the pre-division of the conductive substrate at the wafer end. Based on this, after the subsequent fabrication of the sub-semiconductor unit array, there is no need to cut and split it, thereby avoiding a series of problems such as expensive equipment, low cutting efficiency, wafer warping, edge drawing, and metal particle contamination during the subsequent conductive substrate cutting process. Attached Figure Description

[0050] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0051] Figures 1 to 13 This is a schematic diagram of the structure corresponding to the steps of the semiconductor device fabrication method provided in Embodiment 1 of the present invention;

[0052] Figures 14 to 27 This is a schematic diagram of the structure corresponding to the steps of the semiconductor device fabrication method provided in Embodiment 2 of the present invention;

[0053] Explanation of symbols in the diagram:

[0054] 1. Growth substrate, 2. Buffer layer, 3. Type I semiconductor layer, 4. Active layer, 5. Type II semiconductor layer, 6. Trench, 7. Mesa, 8. Second electrode layer, 9. First insulating layer, 10. Metal layer, 11. Dam, 12. Conductive substrate, 13. Temporary carrier, 14. Second insulating layer, 14.1. Through hole, 15. First electrode, A. Bonding material. Detailed Implementation

[0055] To make the content of this invention clearer, the following description, in conjunction with the accompanying drawings, further illustrates the invention. This invention is not limited to this specific embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0056] Example 1

[0057] A method for fabricating a semiconductor device, comprising:

[0058] S01, such as Figure 1 As shown, a growth substrate 1 is provided;

[0059] It should be noted that, in one embodiment of the present invention, the growth substrate 1 is a transparent substrate, including but not limited to a sapphire substrate or a GaAs substrate.

[0060] S02, such as Figure 2 As shown, an epitaxial stack is grown, the epitaxial stack comprising at least a first type semiconductor layer 3, an active layer 4, and a second type semiconductor layer 5 sequentially stacked along the surface of the growth substrate 1;

[0061] In one embodiment of the present invention, the semiconductor device includes an LED chip, a laser device, or a solar cell device. Further, the epitaxial stack includes an InP-based, GaAs-based, or GaN-based semiconductor material functional layer.

[0062] It should be noted that, in one embodiment of the present invention, a buffer layer 2 or the like for improving crystal quality may be provided between the growth substrate 1 and the first type semiconductor layer 3, and this application does not limit this.

[0063] In one embodiment of the present invention, the types of the first type semiconductor layer 3, the active layer 4 and the second type semiconductor layer 5 are not limited in the semiconductor device of this embodiment. For example, the first type semiconductor layer 3 may be, but is not limited to, an N-type gallium nitride layer, and correspondingly, the second type semiconductor layer 5 may be, but is not limited to, a P-type gallium nitride layer.

[0064] S03, such as Figure 3 As shown, the epitaxial stack is etched to a portion of the first type semiconductor layer 3 to form mesa 7 that are isolated from each other by trench 6;

[0065] In one embodiment of the invention, MESA etching is performed by photolithography and etching to form mesas 7 that are isolated from each other by trenches 6.

[0066] It should be emphasized that, in order to highlight the technical points of the present invention, only three mesa 7 in the micro-light-emitting device are shown in the figure in the embodiment of the present invention. In actual use, the substrate surface may contain tens of thousands of mesa 7, depending on the specific situation. This application does not limit this.

[0067] S04, such as Figure 4 As shown, a second electrode layer 8 is fabricated, which is disposed on the mesa 7 and forms contact with the second type semiconductor layer 5;

[0068] In one embodiment of the present invention, the second electrode layer 8 includes a metal reflective layer. Specifically, in one embodiment of this application, the second electrode layer 8 includes one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, and nickel.

[0069] S05, such as Figure 5 As shown, a first insulating layer 9 is fabricated, which covers the epitaxial stack and exposes at least a portion of the surface of the second electrode layer 8 by extending from the trench 6 to the mesa 7.

[0070] In one embodiment of the present invention, the first insulating layer 9 is exposed at least a portion of the surface of the second electrode layer 8 by photolithography and etching.

[0071] Based on the above embodiments, in one embodiment of this application, the first insulating layer 9 includes, but is not limited to, a silicon dioxide layer.

[0072] S06, such as Figure 6 As shown, a metal layer 10 is fabricated, which is embedded in the groove 6 and covers each of the platform surfaces 7;

[0073] In one embodiment of this application, the metal layer 10 includes a bonding metal layer 10 or an electroplating seed layer.

[0074] S07. A conductive substrate 12 is provided, which is bonded to or electroplated to form contact with the metal layer 10; and pre-defined cutting paths are formed above the trench 6 by photolithography and etching processes, so that the conductive substrate 12 is separated into independent carrier substrates corresponding one-to-one with the mesa 7, to serve as contact electrodes, such as... Figure 7 As shown; in an embodiment of the present invention, the conductive substrate 12 serves as a second electrode for contact between the semiconductor device and the outside, and includes a substrate composed of one or more of Au, Ni, Al, Cu, W, Si, and Se.

[0075] In one embodiment of the present invention, step S07 specifically includes:

[0076] S07-1. A conductive substrate is provided, and a photolithographic pattern is formed on the surface of the conductive substrate 12 by means of double-sided overlay. The photolithographic pattern corresponds one-to-one with the mesa 7 to expose the preset position of the dicing channel.

[0077] S07-2. Etch or etch along the preset position of the cutting path to form the cutting path, so that the conductive substrate 12 is separated into independent carrier substrates corresponding one-to-one with the mesa 7.

[0078] S08, such as Figure 8As shown, a temporary carrier plate 13 is provided, which is bonded to the mesa 7 by bonding material to obtain the desired effect. Figure 9 The structure shown;

[0079] S09, such as Figure 10 As shown, the growth substrate 1 is removed to expose the first type semiconductor layer 3;

[0080] Based on the above embodiments, in one embodiment of this application, the growth substrate 1 is removed by laser stripping.

[0081] In one embodiment of the present invention, when a buffer layer 2 or the like for improving crystal quality is provided between the growth substrate 1 and the first type semiconductor layer 3, it must be removed at the same time in order to expose the first type semiconductor layer 3.

[0082] In one embodiment of the present invention, step S09 further includes: forming a roughened surface on the exposed surface of the first type semiconductor layer 3 by an etching process.

[0083] S10, such as Figure 11 As shown, the first type semiconductor layer 3 below the trench 6 is etched to expose the first insulating layer 9 to form a plurality of independent sub-semiconductor units;

[0084] S11, such as Figure 12 As shown, a second insulating layer 14 is fabricated, which is disposed on the exposed surface of the first type semiconductor layer 3 and has through holes 14.1 that expose at least a portion of the surface of the first type semiconductor layer 3 corresponding to each of the sub-semiconductor units;

[0085] Based on the above embodiments, in one embodiment of this application, the second insulating layer 14 includes, but is not limited to, a silicon dioxide layer.

[0086] S12, such as Figure 13 As shown, a first electrode 15 is deposited and formed within each of the aforementioned through holes 14.1;

[0087] Based on the above embodiments, in one embodiment of this application, the first electrode 15 serves as another electrode in contact between the semiconductor device and the outside, and includes one or more of Au, Ni, Al, Cu, W, Si, and Se.

[0088] S13. A transition film is provided. After the first electrode is adhered to the transition film, the temporary carrier plate 13 and the temporary bonding material are removed to expose the conductive substrate 12. The surface of the conductive substrate 12 is then adhered to the conductive film, and the transition film is removed. After spot testing of each of the sub-semiconductor units through the conductive film and the first electrode 15, the sub-semiconductor units are separated from each other by means of blue film breakage and / or removal of each material layer corresponding to the dicing position, so as to complete the sorting of the sub-semiconductor units.

[0089] In one embodiment of the present invention, step S13 specifically includes:

[0090] S13-1. Provide a transition film and adhere the first electrode to the transition film;

[0091] S13-2, Adhere the transition film to the surface of the sensing layer;

[0092] S13-3, Remove the temporary carrier plate 13 and temporary bonding material to expose the conductive substrate 12;

[0093] S13-4. The surface of the conductive substrate 12 is attached to the conductive film, and the sensing layer and the transition film are desorbed by the corresponding sensing source so that the first electrode 15 faces upward, and then the sub-semiconductor units are measured point by point.

[0094] S13-5. The semiconductor device is transferred from the conductive film to the blue film, and the blue film is heated and expanded to increase the spacing between the sub-semiconductor units on the surface of the blue film. This causes the material layers corresponding to the cutting path to break and the film to be peeled off, thereby separating the sub-semiconductor units from each other.

[0095] In one embodiment of the present invention, the sensing layer includes any one of thermal sensing materials, ultraviolet light sensing materials, laser sensing materials, radiation sensing materials, plasma sensing materials, and microwave sensing materials.

[0096] Correspondingly, the sensing source includes a heat source, an ultraviolet light source, a laser source, a radiation source, a plasma source, or a microwave source.

[0097] In one embodiment of the present invention, the semiconductor device includes an LED chip, a laser device, or a solar cell device.

[0098] In one embodiment of the present invention, the epitaxial stack includes an InP-based, GaAs-based, or GaN-based semiconductor material functional layer.

[0099] In one embodiment of the present invention, the second electrode layer 8 includes a metal reflective layer.

[0100] The present invention also provides a semiconductor device which is manufactured by any of the methods described above.

[0101] As can be seen from the above technical solutions, based on the semiconductor device and its fabrication method provided by the present invention, the conductive substrate 12 can be divided by etching or etching methods, or the conductive substrate 12 can be directly deposited to divide each other by patterned electroplating methods, so as to achieve the pre-division of the conductive substrate 12 at the wafer end. Based on this, after the sub-semiconductor unit array is subsequently fabricated, there is no need to cut and split it, thereby avoiding a series of problems such as expensive equipment, low cutting efficiency, wafer warping, edge drawing, and metal particle contamination during the subsequent cutting of the conductive substrate 12.

[0102] Example 2

[0103] A method for fabricating a semiconductor device, comprising:

[0104] S01, such as Figure 14 As shown, a growth substrate 1 is provided;

[0105] It should be noted that, in one embodiment of the present invention, the growth substrate 1 is a transparent substrate, including but not limited to a sapphire substrate or a GaAs substrate.

[0106] S02, such as Figure 15 As shown, an epitaxial stack is grown, the epitaxial stack comprising at least a first type semiconductor layer 3, an active layer 4, and a second type semiconductor layer 5 sequentially stacked along the surface of the growth substrate 1;

[0107] In one embodiment of the present invention, the semiconductor device includes an LED chip, a laser device, or a solar cell device. Further, the epitaxial stack includes an InP-based, GaAs-based, or GaN-based semiconductor material functional layer.

[0108] It should be noted that, in one embodiment of the present invention, a buffer layer 2 or the like for improving crystal quality may be provided between the growth substrate 1 and the first type semiconductor layer 3, and this application does not limit this.

[0109] In one embodiment of the present invention, the types of the first type semiconductor layer 3, the active layer 4 and the second type semiconductor layer 5 are not limited in the semiconductor device of this embodiment. For example, the first type semiconductor layer 3 may be, but is not limited to, an N-type gallium nitride layer, and correspondingly, the second type semiconductor layer 5 may be, but is not limited to, a P-type gallium nitride layer.

[0110] S03, such as Figure 16 As shown, the epitaxial stack is etched to a portion of the first type semiconductor layer 3 to form mesa 7 that are isolated from each other by trench 6;

[0111] In one embodiment of the invention, MESA etching is performed by photolithography and etching to form mesas 7 that are isolated from each other by trenches 6.

[0112] It should be emphasized that, in order to highlight the technical points of the present invention, only three mesa 7 in the micro-light-emitting device are shown in the figure in the embodiment of the present invention. In actual use, the substrate surface may contain tens of thousands of mesa 7, depending on the specific situation. This application does not limit this.

[0113] S04, such as Figure 17 As shown, a second electrode layer 8 is fabricated, which is disposed on the mesa 7 and forms contact with the second type semiconductor layer 5;

[0114] In one embodiment of the present invention, the second electrode layer 8 includes a metal reflective layer. Specifically, in one embodiment of this application, the second electrode layer 8 includes one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, and nickel.

[0115] S05, such as Figure 18 As shown, a first insulating layer 9 is fabricated, which covers the epitaxial stack and exposes at least a portion of the surface of the second electrode layer 8 by extending from the trench 6 to the mesa 7.

[0116] In one embodiment of the present invention, the first insulating layer 9 is exposed at least a portion of the surface of the second electrode layer 8 by photolithography and etching.

[0117] Based on the above embodiments, in one embodiment of this application, the first insulating layer 9 includes, but is not limited to, a silicon dioxide layer.

[0118] S06, such as Figure 19 As shown, a metal layer 10 is fabricated, which is embedded in the groove 6 and covers each of the platform surfaces 7;

[0119] Next, as Figure 20 As shown, a dam 11 is formed within the trench 6.

[0120] S07, such as Figure 21 As shown, a conductive substrate 12 is provided, which is bonded to or electroplated to form a contact with the metal layer 10. The conductive substrate 12 is separated into independent support substrates corresponding to the platform 7 by the dam 11.

[0121] In an embodiment of the present invention, the conductive substrate 12 serves as a second electrode for contact between the semiconductor device and the outside, and includes a substrate composed of one or more of Au, Ni, Al, Cu, W, Si, and Se.

[0122] In an embodiment of the present invention, the height of the conductive substrate 12 is not higher than the height of the dam 11, so that the conductive substrate 12 is separated into independent carrier substrates corresponding one-to-one with the platform 7 by the dam 11, so as to serve as contact electrodes.

[0123] S08, such as Figure 22 As shown, a temporary carrier plate 13 is provided, which is bonded to the mesa 7 by bonding material to obtain the desired effect. Figure 23 The structure shown;

[0124] S09, such as Figure 24 As shown, the growth substrate 1 is removed to expose the first type semiconductor layer 3;

[0125] Based on the above embodiments, in one embodiment of this application, the growth substrate 1 is removed by laser stripping.

[0126] In one embodiment of the present invention, when a buffer layer 2 or the like for improving crystal quality is provided between the growth substrate 1 and the first type semiconductor layer 3, it must be removed at the same time in order to expose the first type semiconductor layer 3.

[0127] In one embodiment of the present invention, step S09 further includes: forming a roughened surface on the exposed surface of the first type semiconductor layer 3 by an etching process.

[0128] S10, such as Figure 25 As shown, the first type semiconductor layer 3 below the trench 6 is etched to expose the first insulating layer 9 to form a plurality of independent sub-semiconductor units;

[0129] S11, such as Figure 26 As shown, a second insulating layer 14 is fabricated, which is disposed on the exposed surface of the first type semiconductor layer 3 and has through holes 14.1 that expose at least a portion of the surface of the first type semiconductor layer 3 corresponding to each of the sub-semiconductor units;

[0130] Based on the above embodiments, in one embodiment of this application, the second insulating layer 14 includes, but is not limited to, a silicon dioxide layer.

[0131] S12, such as Figure 27 As shown, a first electrode 15 is deposited and formed within each of the aforementioned through holes 14.1;

[0132] Based on the above embodiments, in one embodiment of this application, the first electrode 15 serves as another electrode in contact between the semiconductor device and the outside, and includes one or more of Au, Ni, Al, Cu, W, Si, and Se.

[0133] S13. A transition film is provided. After the first electrode is adhered to the transition film, the temporary carrier plate 13 and the temporary bonding material are removed to expose the conductive substrate 12. The surface of the conductive substrate 12 is then adhered to the conductive film, and the transition film is removed. Based on this, after spot testing of each of the sub-semiconductor units through the conductive film and the first electrode 15, the sub-semiconductor units are separated from each other by means of blue film breakage and / or removal of each material layer corresponding to the dicing position, so as to complete the sorting of the sub-semiconductor units.

[0134] In one embodiment of the present invention, step S13 specifically includes:

[0135] S13-1. Provide a transition film and adhere the first electrode to the transition film;

[0136] S13-2, Adhere the transition film to the surface of the sensing layer;

[0137] S13-3, Remove the temporary carrier plate 13 and temporary bonding material to expose the conductive substrate 12;

[0138] S13-4. The surface of the conductive substrate 12 is attached to the conductive film, and the sensing layer and the transition film are desorbed by the corresponding sensing source so that the first electrode faces upward, and then the sub-semiconductor units are measured point by point.

[0139] S13-5. The semiconductor device is transferred from the conductive film to the blue film, and the blue film is heated and expanded to increase the spacing between the sub-semiconductor units on the surface of the blue film. This causes the material layers corresponding to the cutting path to break, and the film is peeled off and the dam 11 is removed, thereby separating the sub-semiconductor units from each other.

[0140] In one embodiment of the present invention, the sensing layer includes any one of thermal sensing materials, ultraviolet light sensing materials, laser sensing materials, radiation sensing materials, plasma sensing materials, and microwave sensing materials.

[0141] Correspondingly, the sensing source includes a heat source, an ultraviolet light source, a laser source, a radiation source, a plasma source, or a microwave source.

[0142] In one embodiment of the present invention, the semiconductor device includes an LED chip, a laser device, or a solar cell device.

[0143] In one embodiment of the present invention, the epitaxial stack includes an InP-based, GaAs-based, or GaN-based semiconductor material functional layer.

[0144] In one embodiment of the present invention, the second electrode layer 8 includes a metal reflective layer.

[0145] The present invention also provides a semiconductor device which is manufactured by any of the methods described above.

[0146] As can be seen from the above technical solutions, based on the semiconductor device and its fabrication method provided by the present invention, the conductive substrate 12 can be divided by etching or etching methods, or the conductive substrate 12 can be directly deposited to divide each other by patterned electroplating methods, so as to achieve the pre-division of the conductive substrate 12 at the wafer end. Based on this, after the sub-semiconductor unit array is subsequently fabricated, there is no need to cut and split it, thereby avoiding a series of problems such as expensive equipment, low cutting efficiency, wafer warping, edge drawing, and metal particle contamination during the subsequent cutting of the conductive substrate 12.

[0147] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0148] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0149] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for fabricating a semiconductor device, characterized in that, include: S01, Provide a growth substrate; S02. Growing an epitaxial stack, wherein the epitaxial stack includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along the surface of the growth substrate; S03. Etch the epitaxial stack to a portion of the first type semiconductor layer to form mesa surfaces isolated from each other by trenches; S04. Fabricate a second electrode layer, which is disposed on the mesa and forms contact with the second type semiconductor layer; S05. Fabricate a first insulating layer, wherein the first insulating layer covers the epitaxial stack and exposes at least a portion of the surface of the second electrode layer by extending from the trench to the mesa. S06. Fabricate a metal layer, the metal layer being embedded in the groove and covering each of the tabletops; S07. A conductive substrate is provided, which is separately formed on the surface of the mesa; S08. Provide a temporary carrier plate, which is bonded to the top of the platform by bonding material; S09. Remove the growth substrate to expose the first type of semiconductor layer; S10. The first type semiconductor layer below the trench is etched to expose the first insulating layer to form a plurality of independent sub-semiconductor units; S11. Fabricate a second insulating layer, the second insulating layer being disposed on the exposed surface of the first type semiconductor layer and having through holes exposing at least a portion of the surface of the first type semiconductor layer corresponding to each of the sub-semiconductor units; S12. A first electrode is deposited in each of the through holes to form a first electrode; S13. A transition film is provided. After the first electrode is adhered to the transition film, the temporary carrier and temporary bonding material are removed to expose the conductive substrate. The surface of the conductive substrate is then adhered to the conductive film, and the transition film is removed. After spot testing of each of the sub-semiconductor units through the conductive film and the first electrode, the sub-semiconductor units are separated from each other by means of blue film expansion fracture and / or removal of each material layer corresponding to the dicing position, so as to complete the sorting of the sub-semiconductor units.

2. The method for fabricating a semiconductor device according to claim 1, characterized in that, The metal layer includes a bonded metal layer or an electroplated seed layer; the conductive substrate is in contact with the metal layer through bonding or electroplating.

3. The method for fabricating a semiconductor device according to claim 2, characterized in that, Step S07 includes: forming a pre-set position of a cutting path above the trench through photolithography and etching processes, so that the conductive substrate is separated into independent carrier substrates corresponding one-to-one with the mesa.

4. The method for fabricating a semiconductor device according to claim 3, characterized in that, Step S07 specifically includes: S07-1. A conductive substrate is provided, and a photolithographic pattern is formed on the surface of the conductive substrate by double-sided overlay. The photolithographic pattern corresponds one-to-one with the mesa to expose the preset position of the dicing channel. S07-2. Etching or etching is performed along the preset position of the cutting path to form the cutting path, so that the conductive substrate is separated into independent carrier substrates corresponding one-to-one with the mesa.

5. The method for fabricating a semiconductor device according to claim 2, characterized in that, Step S13 specifically includes: S13-1. Provide a transition film and adhere the first electrode to the transition film; S13-2, Adhere the transition film to the surface of the sensing layer; S13-3. Remove the temporary carrier and temporary bonding material to expose the conductive substrate; S13-4. The surface of the conductive substrate is attached to the conductive film, and the sensing layer and the transition film are desorbed by the corresponding sensing source so that the first electrode faces upward, and then the sub-semiconductor units are measured point by point. S13-5. The semiconductor device is transferred from the conductive film to the blue film, and the blue film is heated and expanded to increase the spacing between the sub-semiconductor units on the surface of the blue film. This causes the material layers corresponding to the cutting path to break and the film to be peeled off, thereby separating the sub-semiconductor units from each other.

6. The method for fabricating a semiconductor device according to claim 5, characterized in that, The sensing layer includes any one of the following: thermal sensing material, ultraviolet light sensing material, laser sensing material, radiation sensing material, plasma sensing material, and microwave sensing material.

7. The method for fabricating a semiconductor device according to claim 6, characterized in that, Correspondingly, the sensing source includes a heat source, an ultraviolet light source, a laser source, a radiation source, a plasma source, or a microwave source.

8. The method for fabricating a semiconductor device according to claim 2, characterized in that, After step S06, a dam is formed in the trench using photolithography.

9. The method for fabricating a semiconductor device according to claim 8, characterized in that, In step S07, the height of the conductive substrate is not higher than the height of the dam. After the conductive substrate is separated into independent support substrates corresponding one-to-one with the platform by the dam, the dam is removed by cleaning.

10. The method for fabricating a semiconductor device according to claim 8, characterized in that, Step S13 specifically includes: S13-1. Provide a transition film and adhere the first electrode to the transition film; S13-2, Adhere the transition film to the surface of the sensing layer; S13-3. Remove the temporary carrier and temporary bonding material to expose the conductive substrate; S13-4. The surface of the conductive substrate is attached to the conductive film, and the sensing layer and the transition film are desorbed by the corresponding sensing source so that the first electrode faces upward, and then the sub-semiconductor units are measured point by point. S13-5. The semiconductor device is transferred from the conductive film to the blue film, and the blue film is heated and expanded to increase the spacing between the sub-semiconductor units on the surface of the blue film. This causes the material layers corresponding to the cutting path to break, and the film is peeled off and the dam is removed, thereby separating the sub-semiconductor units from each other.

11. The method for fabricating a semiconductor device according to claim 1, characterized in that, Step S09 further includes: forming a roughened surface on the exposed surface of the first type of semiconductor layer through an etching process.

12. The method for fabricating a semiconductor device according to claim 1, characterized in that, The semiconductor device includes an LED chip, a laser device, or a solar cell device.

13. The method for fabricating a semiconductor device according to claim 12, characterized in that, The epitaxial stack includes functional layers of InP-based, GaAs-based, or GaN-based semiconductor materials.

14. A semiconductor device, characterized in that, It is manufactured by the manufacturing method according to any one of claims 1 to 13.

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