Silicon carbide single crystal growth device and silicon carbide single crystal growth method for reducing ignition of heating element

By using insulating spacers in the silicon carbide single crystal growth device to prevent current breakdown, the pressure and temperature fluctuations caused by the ignition of graphite heating bodies are solved, and the crystal quality and equipment life are improved.

CN118600557BActive Publication Date: 2024-12-31SUZHOU UKING PHOTOELECTRIC TECH CO LTD
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Patent Information

Application Number
CN202411087819.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-08-09
Publication Date
2024-12-31
Estimated Expiration
2044-08-09

AI Technical Summary

Technical Problem

During the growth of silicon carbide single crystals, the ignition phenomenon of graphite heating body causes pressure and temperature fluctuations in the furnace body, destroying the stability of crystal growth, increasing crystal defects, and shortening the service life of the heating body and crucible.

Method used

Insulated spacer is used to separate the heating element and the crucible, and the insulation characteristics of the insulated spacer are used to prevent current breakdown, heat the crucible through heat radiation, reduce ignition phenomenon, ensure the stability of pressure and temperature, improve crystal quality, and Extend the service life of the equipment.

Benefits of technology

It effectively reduces internal defects of the crystal, improves the quality of silicon carbide single crystal, extends the service life of the heating body and crucible, and ensures the atmosphere stability of the crystal growth process.

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Abstract

The present invention relates to the field of semiconductor technology, and in particular, to a silicon carbide single crystal growth device and a silicon carbide single crystal growth method for reducing the ignition of a heating element; the silicon carbide single crystal growth device for reducing the ignition of a heating element can be used to grow silicon carbide single crystals, and comprises a furnace body, a heating element, a crucible, a crucible cover and an insulating barrier, wherein the furnace body has a containing cavity; the crucible is arranged in the containing cavity, and the crucible has a cavity, and the cavity is used to fill silicon carbide raw materials; the crucible cover is detachably arranged above the crucible and is located at the opening of the cavity, and the crucible cover is used to fix the seed crystal; the heating element is arranged in the containing cavity, and the heating element surrounds the outer periphery of the crucible; the insulating barrier is arranged in the containing cavity, and is separated between the inner wall of the heating element and the outer wall of the crucible. The growth device can utilize the insulating barrier to reduce the ignition phenomenon, ensure the stability of the pressure and temperature in the furnace body, improve the quality of the grown crystal, and extend the service life of the heating element and the crucible.
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Citation Information

Patent Citations

  • Single crystal furnace with volatile matter precipitation path

    CN116121854A

  • Furnace body for silicon carbide single crystal growth and processing technology thereof

    CN116479528A

  • Growth device and method for silicon carbide single crystals capable of inhibiting high-temperature thermal field corrosion

    CN117702272A

  • Molecular beam cell for high temperature

    JP1991116027U

  • Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control

    US20030037721A1