A low dielectric insulating potting glue for IGBT and a preparation method thereof

Abstract

The present application relates to the field of sealing materials, and specifically discloses a low dielectric insulating potting glue applied to IGBT and a preparation method thereof. The low dielectric insulating potting glue is composed of component A and component B, and component A is prepared from the following raw materials in parts by weight: 30-50 parts of vinyl silicone oil, 10-20 parts of vinyl MQ silicone resin, 3-8 parts of vinyl silane coupling agent, 2-4 parts of long-chain alkyl silane coupling agent, 35-45 parts of filler, 4-8 parts of cross-linking aid, 1-3 parts of stabilizer, and 0.2-0.4 parts of platinum catalyst; component B is prepared from the following raw materials in parts by weight: 16-26 parts of hydrogen-containing silicone oil, 0.1-0.2 parts of inhibitor, and 1-3 parts of antioxidant. The preparation process of the low dielectric insulating potting glue of the present application is simple, and the obtained low dielectric insulating potting glue has good weather resistance, insulation and crack resistance, is suitable for the packaging of IGBT, has good sealing and stable function.

Description

Technical Field

[0001] The present application relates to the field of sealing materials, and more specifically, to a low-dielectric insulating potting adhesive for IGBT and a preparation method thereof. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Insulated Gate Field Effect Transistor). It has the advantages of both high input impedance of MOSFET and low on-state voltage drop of GTR. IGBT is very suitable for use in conversion systems with DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives and other fields.

[0003] Insulating potting glue is mainly used in IGBT. Through the potting process, it can effectively fill the gaps inside the IGBT module, improve the module's moisture-proof, insulation and vibration resistance, thereby ensuring the long-term stable operation of the IGBT module under harsh environmental conditions.

[0004] The insulating potting compound currently used is generally silicone potting compound, which is made of hydrogen-containing silicone oil, vinyl silicone oil, platinum catalyst and filler. It has good temperature resistance, protection and sealing. However, when IGBT operates under long-term high voltage, it is easy to reduce insulation and crack and damage the surface of the insulating potting compound due to environmental factors (such as temperature and humidity changes) and mechanical stress, thereby reducing the sealing and functional stability of the IGBT. Summary of the invention

[0005] In order to solve the problem that conventional insulating sealants are used in IGBTs, and the IGBTs are prone to reduced insulation, surface cracks and damage during long-term operation, the present application provides a low-dielectric insulating potting glue for IGBTs and a preparation method thereof.

[0006] In a first aspect, the present application provides a low dielectric insulating potting compound for IGBT, which adopts the following technical solution:

[0007] A low dielectric insulating potting adhesive for IGBT consists of a component A and a component B. The component A is prepared from the following raw materials in parts by weight: 30-50 parts of vinyl silicone oil, 10-20 parts of vinyl MQ silicone resin, 3-8 parts of vinyl silane coupling agent, 2-4 parts of long-chain alkyl silane coupling agent, 35-45 parts of filler, 4-8 parts of cross-linking aid, 1-3 parts of stabilizer, and 0.2-0.4 parts of platinum catalyst; and the component B is prepared from the following raw materials in parts by weight: 16-26 parts of hydrogen-containing silicone oil, 0.1-0.2 parts of inhibitor, and 1-3 parts of antioxidant.

[0008] By adopting the above technical scheme, the low dielectric insulating potting glue applied to IGBT of the present application is a two-component addition potting glue, which is composed of component A and component B. Among them, component A uses vinyl silicone oil and vinyl MQ silicone resin as a vinyl resin system, and fillers are added to the vinyl resin system as reinforcing agents and low dielectric insulating fillers, which are fully dispersed under the action of vinyl silane coupling agents and long-chain alkyl silane coupling agents. The cross-linking aid can further cross-link with the system to improve the cross-linking density of the low dielectric insulating potting glue, and the stabilizer can improve the dispersion stability and cross-linking stability of the system; the vinyl silane coupling agent, long-chain alkyl silane coupling agent, cross-linking aid and stabilizer produce a good synergistic effect. , mixed in an optimal dosage ratio, can effectively improve the weather resistance, insulation and crack resistance of the low dielectric insulating potting glue; component B is mainly composed of hydrogen-containing silicone oil, inhibitor and antioxidant. When used, component A is mixed with component B, and under the action of platinum catalyst, component A and component B react to prepare a low dielectric insulating potting glue with good weather resistance, insulation and crack resistance; applied to the packaging of IGBT, it can evenly and stably penetrate into the gap of IGBT for filling and sealing, with good sealing and stable function.

[0009] Preferably, the crosslinking aid is composed of 4-vinylbenzyl glycidyl ether and trimethylolpropane monoallyl ether in a weight ratio of 1:(0.4-0.8).

[0010] By adopting the above technical scheme, 4-vinylbenzyl glycidyl ether and trimethylolpropane monoallyl ether are used as cross-linking aids in an optimal dosage ratio. The two have a good synergistic effect and can be further cross-linked with the system under the action of a platinum catalyst, thereby improving the cross-linking density and flexibility of the prepared low dielectric insulating potting adhesive, thereby improving weather resistance and crack resistance.

[0011] Preferably, the stabilizer is composed of octavinylsilsesquioxane and diethylene glycol in a weight ratio of (2-4) 1:.

[0012] By adopting the above technical scheme, octavinyl silsesquioxane is a silane elastomer with a cage-type stereostructure, and octavinyl silsesquioxane and diethylene glycol are used as stabilizers. Diethylene glycol has good permeability and dispersibility, and can improve the dispersibility of octavinyl silsesquioxane, so that octavinyl silsesquioxane can be evenly dispersed and interwoven in the resin system, and the filler can be evenly dispersed in the cage-type stereostructure, further improving the dispersion uniformity of the filler, thereby improving the weather resistance, insulation and material elasticity of the prepared low dielectric insulating potting glue, so that the low dielectric insulating potting glue after curing is not prone to cracking.

[0013] Preferably, the vinyl silane coupling agent is composed of vinyl trimethoxy silane and tetramethyl divinyl disilazane in a weight ratio of 1:(0.5-1).

[0014] By adopting the above technical scheme, vinyltrimethoxysilane and tetramethyldivinyldisilazane in an optimal dosage ratio are used as vinyl silane coupling agents, which can be fully grafted with the filler and further cross-linked with the system under the action of a platinum catalyst, thereby improving the dispersion uniformity of the filler in the resin system and the cross-linking performance of the resin system.

[0015] Preferably, the long-chain alkylsilane coupling agent is one or a combination of n-octyltrimethoxysilane, n-octyltriethoxysilane, dodecyltrimethoxysilane, dodecyltriethoxysilane, hexadecyltrimethoxysilane and octadecyltrimethoxysilane.

[0016] By adopting the above technical scheme, the long-chain alkyl silane coupling agent has a non-polar long carbon chain alkyl group, which can enhance the interface interaction between the filler and the vinyl silicone oil and the vinyl MQ silicone resin, thereby producing a good synergistic effect with the vinyl silane coupling agent, improving the dispersibility of the filler, and at the same time being able to interweave with the molecular chain segments of the vinyl silicone oil and the vinyl MQ silicone resin, thereby enhancing the compactness of the molecular structure, thereby enhancing the weather resistance of the low dielectric insulating potting adhesive obtained, making the low dielectric insulating potting adhesive less prone to cracking.

[0017] Preferably, the filler is one or a combination of silicon dioxide, aluminum oxide, aluminum nitride and boron nitride.

[0018] By adopting the above technical solution, the above filler has good thermal conductivity and insulation, and can improve the low dielectric insulation and thermal conductivity of the prepared low dielectric insulating potting glue.

[0019] Preferably, the inhibitor is at least one of methylbutynol, ethynylcyclohexanol and tert-butylcyclohexanol.

[0020] By adopting the above technical solution, the above inhibitor can control the activity of the platinum catalyst and improve the stability of the hydrosilylation reaction; it can improve the selectivity of the reaction and reduce the incidence of side reactions.

[0021] Preferably, the antioxidant is one or a combination of antioxidant 1010 , antioxidant 1076 , antioxidant 168 and antioxidant 618 .

[0022] By adopting the above technical solution, the above antioxidant has good anti-aging performance, can improve the aging resistance of the prepared low-dielectric insulating potting glue, and increase the service life.

[0023] Preferably, when used, the weight ratio of the component A to the component B is (1-1.2):1, and the curing temperature is 70-80°C.

[0024] By adopting the above technical scheme, when in use, component A and component B are mixed in an optimal dosage ratio, and under optimal temperature conditions, component A and component B are fully cross-linked and then cured. The curing stability is good, and the obtained low dielectric insulating potting glue has good sealing stability.

[0025] In a second aspect, the present application provides a method for preparing a low dielectric insulating potting compound for use in IGBT, using the following technical solution:

[0026] A method for preparing a low dielectric insulating potting adhesive for IGBT comprises the following preparation steps: component A: adding vinyl silicone oil, vinyl MQ silicone resin, vinyl silane coupling agent, long-chain alkyl silane coupling agent and filler into a stirring device, and mixing and stirring evenly; then adding a cross-linking auxiliary agent, a stabilizer and a platinum catalyst, mixing evenly, and vacuum degassing to obtain component A;

[0027] Component B: Add hydrogen-containing silicone oil, inhibitor and antioxidant into a stirring device, mix well, and perform vacuum degassing to obtain component B.

[0028] By adopting the above technical scheme, the filler is dispersed into the vinyl silicone oil and the vinyl MQ silicone resin, and under the joint action of the vinyl silane coupling agent and the long-chain alkyl silane coupling agent, the filler is evenly dispersed to improve the dispersion uniformity of the filler, and then a cross-linking aid, a stabilizer and a platinum catalyst are added for stirring to further disperse the system, and then vacuum degassing is performed to obtain component A; the hydrogen-containing silicone oil, the inhibitor and the antioxidant are fully mixed and vacuum degassed to obtain component B, and the components A and B thus obtained have good fluidity, dispersion uniformity and storage stability.

[0029] In summary, this application has the following beneficial effects:

[0030] 1. The low dielectric insulating potting glue used for IGBT of the present application is a two-component addition potting glue, which is composed of component A and component B. Component A uses vinyl silicone oil and vinyl MQ silicone resin as the resin system, and uses vinyl silane coupling agent, long-chain alkyl silane coupling agent, cross-linking aid and stabilizer as auxiliary agents, and is compounded with fillers and platinum catalysts; component B mainly consists of hydrogen-containing silicone oil, inhibitors and antioxidants; when used, component A is mixed with component B, and under the action of platinum catalyst, component A and component B react to prepare a low dielectric insulating potting glue with good weather resistance, insulation and crack resistance. It is used in IGBT packaging and can evenly penetrate into the gap of IGBT, with good sealing and stable function.

[0031] 2. 4-vinylbenzyl glycidyl ether and trimethylolpropane monoallyl ether are used as crosslinking aids, octavinyl silsesquioxane and diethylene glycol are used as stabilizers, vinyltrimethoxysilane and tetramethyldivinyldisilazane are used as vinyl silane coupling agents, and are compounded with a long-chain alkyl silane coupling agent. The four have a good synergistic effect, which can improve the dispersibility of the filler in the system and further cross-link with the system, thereby improving the molecular density and elasticity of the low dielectric insulating potting glue, thereby improving the weather resistance, insulation and crack resistance of the low dielectric insulating potting glue.

[0032] 3. The preparation method of the present application prepares component A and component B separately and stores them to obtain a two-component addition-type low-dielectric insulating potting adhesive with good processing and storage stability. DETAILED DESCRIPTION

[0033] The present application is further described in detail below in conjunction with embodiments.

[0034] The following are the sources and specifications of some raw materials of this application. The raw materials used in the preparation examples and embodiments of this application can be obtained from the market, including but not limited to the raw materials of the following models and manufacturers. Raw materials with equivalent performance can be used:

[0035] 1. Vinyl silicone oil: molecular weight 6000-10000, vinyl content 0.4-1.2%, viscosity 100-500cps / 25℃;

[0036] 2. Vinyl MQ silicone resin: vinyl content: 1-1.5%, molecular weight 7000-12000, viscosity 4000-7000cps / 25℃, MQ ratio: (0.6-0.9):1;

[0037] 3. Hydrogenated silicone oil: methyl hydrogenated silicone oil, hydrogen content 0.3-0.7%; viscosity 15-40cps / 25℃;

[0038] 4. 4-vinylbenzyl glycidyl ether: KMIK, CAS No. 113538-80-0;

[0039] 5. Trimethylolpropane monoallyl ether: TMPME, content 98%, CAS No. 682-11-1;

[0040] 6. Tetramethyldivinyldisilazane: Sysbo Silicone, PC 9411;

[0041] 7. Octavidinylsilsesquioxane: Fussman, CAS No. 307531-92-6;

[0042] 8. Silica: fumed silica, particle size 2-5μm;

[0043] 9. Alumina: Spherical alumina, Dongguan Dongchao New Material Technology Co., Ltd., DCA-05S;

[0044] 10. Aluminum nitride: Dongguan Dongchao New Materials Technology Co., Ltd., DCA-05AN;

[0045] 11. Platinum catalyst: Custer platinum catalyst, platinum content 10000-12000ppm.

[0046] Example

[0047] Example 1

[0048] Embodiment 1 discloses a low dielectric insulating potting compound applied to IGBT, which is prepared by the following steps:

[0049] Component A: 3kg of vinyl silicone oil, 1kg of vinyl MQ silicone resin, 0.3kg of vinyl trimethoxysilane as a vinyl silane coupling agent, 0.3kg of a long-chain alkyl silane coupling agent (composed of n-octyl trimethoxysilane and dodecyl trimethoxysilane in a weight ratio of 1:1) and 3.5kg of a filler (composed of silicon dioxide and boron nitride in a weight ratio of 2:1) were added to a blender, the stirring rate was adjusted to 500r / min, stirred for 1h, and mixed evenly; then 0.4kg of trimethylolpropane monoallyl ether as a crosslinking aid, 0.1kg of octavinyl silsesquioxane as a stabilizer and 0.02kg of Custer catalyst as a platinum catalyst were added, mixed for 30min at a stirring rate of 500r / min, and after mixing evenly, vacuum degassing was performed at a vacuum degree of -0.08MPa for 20min to obtain component A;

[0050] Component B: 1.6 kg of hydrogenated silicone oil, 0.01 kg of methyl butynol as an inhibitor and 0.1 kg of antioxidant (composed of antioxidant 1010 and antioxidant 168 in a weight ratio of 2:1) were added into a blender, stirred for 30 min at a stirring rate of 300 r / min, and then vacuum degassed for 20 min at a vacuum degree of -0.08 MPa to obtain component B.

[0051] Example 2-3

[0052] The difference between Example 2-3 and Example 1 is that the amount of raw materials used and the preparation conditions are different, see Table 1 below for details.

[0053] Table 1 Raw material dosage and preparation conditions of Examples 1-3

[0054]

[0055]

[0056]

[0057] Example 4

[0058] The difference between Example 4 and Example 1 is that the crosslinking aid is different. The crosslinking aid in Example 4 is composed of 4-vinyl benzyl glycidyl ether and trimethylolpropane monoallyl ether, and the weight ratio of 4-vinyl benzyl glycidyl ether to trimethylolpropane monoallyl ether is 1:0.4. The rest is the same as Example 1.

[0059] Example 5

[0060] The difference between Example 5 and Example 4 is that the weight ratio of 4-vinylbenzyl glycidyl ether to trimethylolpropane monoallyl ether is 1:0.8, and the rest is the same as Example 4.

[0061] Example 6

[0062] The difference between Example 6 and Example 1 is that the crosslinking aid is different. The crosslinking aid is composed of allyl glycidyl ether and trimethylolpropane monoallyl ether, and the weight ratio of allyl glycidyl ether to trimethylolpropane monoallyl ether is 1:0.4. The rest is the same as Example 1.

[0063] Example 7

[0064] The difference between Example 7 and Example 5 is that the stabilizer is different. The stabilizer in Example 7 is composed of octavinyl silsesquioxane and diethylene glycol, and the weight ratio of octavinyl silsesquioxane to diethylene glycol is 2:1. The rest is the same as Example 5.

[0065] Example 8

[0066] The difference between Example 8 and Example 7 is that the weight ratio of octavinylsilsesquioxane to diethylene glycol is 4:1, and the other parts are the same as Example 7.

[0067] Example 9

[0068] The difference between Example 9 and Example 8 is that an equal amount of diethylene glycol is replaced by polyethylene glycol 400, and the rest is the same as Example 8.

[0069] Example 10

[0070] The difference between Example 10 and Example 8 is that the vinyl silane coupling agent is different. The vinyl silane coupling agent in Example 10 is composed of vinyl trimethoxysilane and tetramethyl divinyl disilazane, and the weight ratio of vinyl trimethoxysilane and tetramethyl divinyl disilazane is 1:0.5. The rest is the same as Example 8.

[0071] Embodiment 11

[0072] The difference between Example 11 and Example 10 is that the weight ratio of vinyltrimethoxysilane to tetramethyldivinyldisilazane is 1:1, and the rest is the same as Example 10.

[0073] Comparative Example

[0074] Comparative Example 1

[0075] The difference between Comparative Example 1 and Example 1 is that the long-chain alkyl silane coupling agent is replaced by an equal amount of vinyl silane coupling agent, and the rest is the same as Example 1.

[0076] Comparative Example 2

[0077] The difference between Comparative Example 2 and Example 1 is that the amount of the cross-linking agent is 0.1 kg, the amount of the stabilizer is 0.4 kg, and the others are the same as Example 1.

[0078] Comparative Example 3

[0079] The difference between Comparative Example 3 and Example 1 is that the crosslinking auxiliary agent is replaced by an equal amount of a vinyl silane coupling agent, and the other aspects are the same as Example 1.

[0080] Performance test The following is a performance test of the low dielectric insulating potting glue for IGBT prepared in Examples 1-11 and Comparative Examples 1-3: Method of using the low dielectric insulating potting glue: Mix component A and component B in a weight ratio of (1-1.2):1, and cure at a temperature of 70-80°C. Prepare a test piece according to the sample size in the following test method and test it. In this test, the mixing weight ratio of component A and component B is 1:1, and the curing temperature is 70°C:

[0081] 1. Dielectric constant test:

[0082] Refer to the test method in GB / T 1693-2007 to test the dielectric constant (1MHz) of low dielectric insulation potting glue. The smaller the dielectric constant, the better the insulation. Test and record the test data.

[0083] 2. Volume resistivity test

[0084] Refer to the test method in GB / T 1410-2006, under the condition of test voltage of 1000V, test the volume resistivity (unit: Ω·cm) of low dielectric insulating potting glue. The larger the volume resistivity, the better the insulation. Test and record the test data; 3. Weather resistance test:

[0085] Place the test piece in a constant temperature and humidity chamber at 85°C and 85% humidity for 168 hours. After returning to room temperature (25°C), refer to the test method in GB / T 1410-2006 and test the volume resistivity (unit: Ω·cm) at a test voltage of 1000V. Test and record the test data.

[0086] 4. Package IGBT drop test:

[0087] Place the packaged IGBT in a constant temperature and humidity chamber at 85°C and 85% humidity for 168 hours. After returning to room temperature (25°C), place it on a test bench at a height of 1m for a drop test. Record whether cracks appear on the surface of the low-dielectric insulating potting glue of the packaged IGBT after 10 drops, and record the test results.

[0088] The following are the performance test data of the low dielectric insulating potting glue of Examples 1-11 and Comparative Examples 1-3, see Table 2 below for details.

[0089] Table 2 Performance test data of low dielectric insulating potting glue of Examples 1-11 and Comparative Examples 1-3

[0090]

[0091] Combining Examples 1-3 and Examples 4-6, Comparative Example 3 and Table 2, it can be seen that the use of 4-vinylbenzyl glycidyl ether and trimethylolpropane monoallyl ether in the preferred dosage ratio of the present application as a crosslinking aid can improve the insulation, weather resistance and crack resistance of the prepared low dielectric insulating potting glue. Compared with Example 1, the dielectric constant of Examples 4-5 is reduced by 0.11, and the volume resistivity is increased by 0.2×10 15 Ω·cm, and after weather resistance testing, the volume resistivity increased by 0.35×10 15 Ω·cm, indicating that the volume resistivity of Example 4-5 has a small change rate after the weather resistance test, the insulation is good and stable, and no cracks occur in Example 4-5.

[0092] Combining Example 4 and Examples 7-9 with Table 2, it can be seen that the use of the preferred usage ratio of octavinyl silsesquioxane and diethylene glycol as stabilizers can further improve the insulation and weather resistance of the low dielectric insulating potting glue obtained; compared with Example 4, the dielectric constant of Examples 7-8 is reduced by 0.08, and the volume resistivity is increased by 0.17×10 15 Ω·cm, and after weather resistance testing, the volume resistivity increased by 0.21×10 15 Ω·cm, indicating that the volume resistivity of Examples 7-8 has a small change rate, and the insulation is good and stable.

[0093] Combining Example 8 and Example 10-11 with Table 2, it can be seen that the use of vinyl trimethoxysilane and tetramethyl divinyl disilazane in the preferred dosage ratio of the present application as silane coupling agents can further improve the insulation and weather resistance of the prepared low dielectric insulating potting glue; compared with Example 8, the dielectric constant of Example 10-11 is reduced by 0.05, and the volume resistivity is increased by 0.08×10 15 Ω·cm, and after weather resistance testing, the volume resistivity increased by 0.9×10 15 Ω·cm, indicating that the volume resistivity of Examples 7-8 has a small change rate, and the insulation is good and stable.

[0094] Furthermore, in combination with Examples 1-3 and Comparative Examples 1-3 and Table 2, it can be concluded that the cross-linking aid, stabilizer, vinyl silane coupling agent and long-chain alkyl silane coupling agent of the present application are compounded, and the four produce a good synergistic effect, which can comprehensively improve the weather resistance, insulation and crack resistance of the prepared low dielectric insulating potting glue.

[0095] This specific embodiment is merely an explanation of the present application and is not a limitation of the present application. After reading this specification, those skilled in the art may make modifications to the present embodiment without any creative contribution as needed, but such modifications are protected by the patent law as long as they are within the scope of the claims of the present application.

Claims

1. A low dielectric insulating potting compound for IGBT, characterized in that: The invention is composed of component A and component B, wherein component A is prepared from the following raw materials in parts by weight: 30-50 parts of vinyl silicone oil, 10-20 parts of vinyl MQ silicone resin, 3-8 parts of vinyl silane coupling agent, 2-4 parts of long-chain alkyl silane coupling agent, 35-45 parts of filler, 4-8 parts of crosslinking aid, 1-3 parts of stabilizer, and 0.2-0.4 parts of platinum catalyst; component B is prepared from the following raw materials in parts by weight: 16-26 parts of hydrogenated silicone oil, 0.1-0.2 parts of inhibitor, and 1-3 parts of antioxidant; the crosslinking aid is prepared from the following raw materials in parts by weight: 16-26 parts of hydrogenated silicone oil, 0.1-0.2 parts of inhibitor, and 1-3 parts of antioxidant; the crosslinking aid is prepared from the following raw materials in parts by weight: 1:(0.4-0.8) The invention relates to a novel silane coupling agent, wherein the silane coupling agent comprises 4-vinylbenzyl glycidyl ether and trimethylolpropane monoallyl ether; the stabilizer comprises octavinylsilsesquioxane and diethylene glycol in a weight ratio of (2-4):1; the vinyl silane coupling agent comprises vinyltrimethoxysilane and tetramethyldivinyldisilazane in a weight ratio of 1:(0.5-1); the long-chain alkyl silane coupling agent is one or a combination of n-octyltrimethoxysilane, n-octyltriethoxysilane, dodecyltrimethoxysilane, dodecyltriethoxysilane, hexadecyltrimethoxysilane and octadecyltrimethoxysilane.

2. The low dielectric insulating potting adhesive for IGBT according to claim 1, characterized in that: The filler is one or a combination of silicon dioxide, aluminum oxide, aluminum nitride and boron nitride.

3. The low dielectric insulating potting adhesive for IGBT according to claim 1, characterized in that: The inhibitor is at least one of methyl butynol, ethynyl cyclohexanol and tert-butyl cyclohexanol.

4. The low dielectric insulating potting adhesive for IGBT according to claim 1, characterized in that: The antioxidant is one or a combination of antioxidant 1010 , antioxidant 1076 , antioxidant 168 and antioxidant 618 .

5. The low dielectric insulating potting adhesive for IGBT according to claim 1, characterized in that: When used, the weight ratio of the component A to the component B is (1-1.2):1, and the curing temperature is 70-80°C.

6. A method for preparing a low dielectric insulating potting compound for IGBT as claimed in any one of claims 1 to 5, characterized in that: The method comprises the following preparation steps: Component A: Add vinyl silicone oil, vinyl MQ silicone resin, vinyl silane coupling agent, long-chain alkyl silane coupling agent and filler into a stirring device, mix and stir evenly; then add a crosslinking aid, a stabilizer and a platinum catalyst, mix evenly, and vacuum degas to obtain component A; Component B: Add hydrogen-containing silicone oil, inhibitor and antioxidant into a stirring device, mix well, and perform vacuum degassing to obtain component B.

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