Highly airtight SIP frequency conversion device suitable for microwave communication

Abstract

The present invention relates to a high-airtightness SIP frequency conversion device suitable for microwave communication. It includes a microwave communication device, which is packaged on a device carrier and at least includes a frequency conversion receiving channel and a pulse transmitting channel; a sealed isolation cover, which is assembled on the device carrier and seals the microwave communication device on the device carrier, and at least a frequency conversion receiving channel cavity and a pulse transmitting channel cavity are formed on the device carrier through the sealed isolation cover, wherein the frequency conversion receiving channel is distributed in the frequency conversion receiving channel cavity, the pulse transmitting channel is distributed in the pulse transmitting channel cavity, and the frequency conversion receiving channel is electromagnetically isolated from the pulse transmitting channel through the sealed isolation cover; when the frequency conversion receiving channel includes at least two mixer devices, at least electromagnetic isolation between the mixer devices is configured in the frequency conversion receiving channel cavity. The present invention can realize the miniaturization and high-precision packaging of frequency conversion devices and improve anti-interference performance.

Description

Technical Field

[0001] The invention relates to a SIP frequency conversion device, in particular to a high-airtightness SIP frequency conversion device suitable for microwave communication. Background Art

[0002] With the continuous development of technology, radar and communication systems are moving towards the trend of being thin, light, short, multifunctional, and low power. Therefore, the requirements for space saving, functional improvement, and power consumption reduction are getting higher and higher. SIP (System In a Package) is the main path to achieve the above technical requirements. For multiple chips with different functions, SIP can be used to arrange them in various forms in three-dimensional space to integrate ceramic carriers and multiple chips into the same tube shell, thus forming a complete system package.

[0003] SIP packaging can not only effectively reduce the system size and improve product performance, but also increase the speed of research and development, which is the development trend and direction of communication systems. At present, frequency conversion devices require small structures, thin vertical dimensions, and high integration of multi-chip circuits. The factors that limit the development of frequency converters towards miniaturization and high integration mainly include interference between various circuits inside the mixer. When the frequency conversion device is reduced to a certain extent, interference will occur between various internal circuits, resulting in poor overall performance of the mixer.

[0004] It can be seen from the above description that, currently, there is an urgent need for a frequency conversion device with high anti-interference characteristics and meeting the requirements of high integration and miniaturization. Summary of the invention

[0005] The purpose of the present invention is to overcome the deficiencies in the prior art and provide a high-airtightness SIP frequency conversion device suitable for microwave communication, which can realize miniaturization and high-precision packaging of the frequency conversion device and improve anti-interference performance.

[0006] According to the technical solution provided by the present invention, a high-airtightness SIP frequency conversion device suitable for microwave communication, the frequency conversion device comprises:

[0007] A microwave communication device, packaged on a device carrier, comprising at least a frequency conversion receiving channel for frequency conversion processing of microwave signals during microwave communication and a pulse transmission channel for modulation processing during microwave communication;

[0008] The sealed isolation cover is assembled on the device carrier and seals the microwave communication device on the device carrier. At least a frequency conversion receiving channel cavity and a pulse transmitting channel cavity are formed on the device carrier through the sealed isolation cover, wherein:

[0009] The frequency conversion receiving channel is distributed in the frequency conversion receiving channel cavity, the pulse transmitting channel is distributed in the pulse transmitting channel cavity, and the frequency conversion receiving channel is electromagnetically isolated from the pulse transmitting channel by a sealed isolation cover;

[0010] When the frequency conversion receiving channel includes at least two mixer devices, at least electromagnetic isolation between the mixer devices is configured in the cavity of the frequency conversion receiving channel.

[0011] The sealed isolation cover comprises a carrier wall arranged on the device carrier, a metal frame located inside the carrier wall, and a metal cover plate for closing the carrier wall, wherein:

[0012] The metal enclosure is placed on the device carrier, and the metal enclosure is connected to the carrier wall through adaptation, so as to form a frequency conversion receiving channel cavity and a pulse transmitting channel cavity on the device carrier, and the frequency conversion receiving channel cavity and the pulse transmitting channel cavity are isolated from each other;

[0013] When the frequency conversion receiving channel includes at least two mixer devices, the frequency conversion receiving channel cavity is configured by a metal frame to form at least two frequency conversion receiving channel sub-cavities.

[0014] The mixer devices in the frequency converter communication module are respectively located in the corresponding frequency converter receiving channel sub-cavities, the frequency converter receiving channel sub-cavities are interconnected through metallized wire grooves that penetrate the metal frame, and the RF microstrip lines connecting the mixer devices penetrate the metallized wire grooves.

[0015] When the frequency conversion receiving channel includes two mixer devices, the frequency conversion receiving channel includes a primary mixer device and a secondary mixer device, wherein:

[0016] The first-order mixing device is distributed in one frequency conversion receiving channel sub-cavity, and the second-order mixing device is distributed in another frequency conversion receiving channel sub-cavity;

[0017] The first-stage mixer device and the second-stage mixer device are electrically connected to form a frequency conversion receiving channel after the electrical connection is adapted;

[0018] When the microwave signal is frequency-converted, the microwave signal is mixed by a primary mixer and a secondary mixer in sequence, and then a corresponding frequency-converted microwave signal is generated by the secondary mixer.

[0019] The first-stage frequency mixer device includes a limiting low-noise amplifier circuit, a switch circuit, a switch filter circuit, an amplitude modulation and phase modulation circuit, and a first-stage frequency mixer filter amplifier circuit connected in sequence.

[0020] The two-stage mixer device includes a two-stage mixer amplifier circuit, a two-stage mixer post-low-pass filter circuit and an intermediate frequency amplifier circuit connected in sequence, wherein:

[0021] The first-stage mixer filter amplifier circuit and the second-stage mixer amplifier circuit are adaptively connected through a radio frequency microstrip line passing through a metallized line slot, so as to configure an adaptive connection between the first-stage mixer device and the second-stage mixer device;

[0022] When the microwave signal is subjected to frequency conversion processing, the microwave signal is sequentially subjected to a limiting low-noise amplifier circuit, a switch circuit, a switch filter circuit, an amplitude modulation and phase modulation circuit, and subjected to a first-stage mixer filter amplifier circuit for a first preset mixing process, so as to generate a first-stage mixed microwave signal after the first preset mixing process;

[0023] The microwave signal after the first-stage mixing is transmitted to the second-stage mixing amplifier circuit via the radio frequency line, and the second-stage mixing amplifier circuit performs a second preset mixing process to generate a second-stage mixed microwave signal after the second preset mixing process;

[0024] The microwave signal after the secondary frequency mixing is processed by the secondary frequency mixing low-pass filter circuit and the intermediate frequency amplifier circuit to generate a corresponding microwave signal after frequency conversion.

[0025] The device carrier includes a plurality of carrier functional layers and a ceramic dielectric layer for spacing two adjacent carrier functional layers, wherein:

[0026] The functional layers of the device carrier are sequentially configured as a microwave signal layer, a ground plane layer, a signal circuit layer, a power circuit layer and a bottom ground layer.

[0027] The microwave communication device is packaged on the microwave signal layer, and the sealing isolation cover is fixed on the microwave signal layer;

[0028] A microwave signal layer radio frequency interface group adapted to the microwave communication device is arranged on the microwave signal layer, wherein the microwave signal layer radio frequency interface group includes a plurality of microwave signal layer radio frequency interfaces;

[0029] A bottom ground layer radio frequency interface group is arranged on the bottom ground layer, and the bottom ground layer radio frequency interface group includes a plurality of bottom ground layer radio frequency interfaces, wherein:

[0030] The microwave signal layer radio frequency interface corresponds to the bottom ground layer radio frequency interface one by one, and the microwave signal layer radio frequency interface is electrically connected to the corresponding bottom ground layer radio frequency interface through a stepped radio frequency via.

[0031] For any stepped RF via, including a RF first sub-via, a via RF microstrip line, and a RF second sub-via,

[0032] One end of the first RF sub-via is electrically connected to the RF interface of the microwave signal layer, the other end of the first RF sub-via is electrically connected to one end of the via RF microstrip line, the other end of the via RF microstrip line is connected to one end of the second RF sub-via, and the other end of the second RF sub-via is electrically connected to a corresponding RF interface of the bottom ground layer.

[0033] The via-hole radio frequency microstrip line is located in the signal circuit layer;

[0034] The first radio frequency sub-via vertically penetrates the microwave signal layer, the ground plane layer, and the ceramic dielectric layer between the microwave signal layer and the ground plane layer;

[0035] The radio frequency second sub-via at least vertically penetrates the power circuit layer, the bottom ground layer, and the ceramic dielectric layer between the power circuit layer and the bottom ground layer;

[0036] A via-to-ground hole unit is provided on the outer circles of the first RF sub-via and the second RF sub-via, wherein the via-to-ground hole unit includes a plurality of via-to-ground holes, and the via-to-ground holes surround the corresponding first RF sub-via and the second RF sub-via.

[0037] The frequency conversion receiving channel and the pulse transmitting channel are bonded to the microwave signal layer by high temperature conductive adhesive;

[0038] The corresponding grounding terminal in the frequency conversion receiving channel is connected to the bottom grounding layer through the corresponding frequency conversion receiving channel grounding hole.

[0039] The corresponding grounding terminal in the pulse transmission channel is adaptively connected to the bottom grounding layer through the corresponding pulse transmission channel grounding hole;

[0040] All the grounding holes of the frequency conversion receiving channel and the grounding holes of the pulse transmitting channel are distributed in a staggered manner.

[0041] The pulse transmission channel includes a transmission branch phase shift attenuation multifunctional circuit, a driving amplifier circuit and a final power amplifier circuit connected in sequence, wherein:

[0042] When modulating a microwave signal, the microwave signal is processed in sequence by a transmitting branch phase shift attenuation multifunctional circuit, a driving amplifier circuit, and a final power amplifier circuit, and a modulated microwave signal is generated by the final power amplifier circuit.

[0043] The pulse transmission channel also includes a power amplifier modulation circuit adapted to be connected to the final power amplifier circuit, wherein:

[0044] The pulse emission channel cavity includes a pulse emission channel first sub-cavity and a pulse emission channel second sub-cavity.

[0045] The first sub-cavity of the pulse emission channel and the second sub-cavity of the pulse emission channel are connected to each other;

[0046] The transmitting branch phase shift attenuation multifunctional circuit and the driving amplifier circuit are located in the first sub-cavity of the pulse transmitting channel, and the power amplifier modulation circuit and the final power amplifier circuit are located in the second sub-cavity of the pulse transmitting channel.

[0047] The advantages of the present invention are as follows: the microwave communication device is packaged on the device carrier, and the microwave communication device is sealed on the device carrier by using a sealed isolation cover, and at least a frequency conversion receiving channel cavity and a pulse emission channel cavity are formed on the device carrier through the sealed isolation cover, the frequency conversion receiving channel is distributed in the frequency conversion receiving channel cavity, the pulse emission channel is distributed in the pulse emission channel cavity, and the frequency conversion receiving channel is electromagnetically isolated from the pulse emission channel by the sealed isolation cover;

[0048] When the frequency conversion receiving channel includes at least two mixer devices, at least electromagnetic isolation between the mixer devices is configured in the cavity of the frequency conversion receiving channel.

[0049] The microwave signal layer radio frequency interface is electrically connected to the corresponding bottom ground layer radio frequency interface through a stepped radio frequency via. The stepped radio frequency via can improve the anti-interference capability of the radio frequency signal during microwave communication. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 A schematic diagram of an embodiment of the present invention.

[0051] Figure 2 The figure is a schematic diagram of an embodiment of the present invention in which a metallized wire duct is arranged on a metal enclosure frame.

[0052] Figure 3 The figure is a schematic diagram of a device distribution embodiment of the frequency conversion devices of the present invention distributed on a device carrier.

[0053] Figure 4 The figure is a structural block diagram of a functional embodiment of the microwave frequency conversion device of the present invention.

[0054] Figure 5 It is a schematic diagram of a laminated structure embodiment of a device carrier of the present invention.

[0055] Figure 6 It is a schematic diagram of the distribution of an embodiment of the bottom ground layer interface of the present invention to the external connection interface on the bottom ground layer.

[0056] Figure 7 It is a schematic diagram of an embodiment of a stepped radio frequency via of the present invention.

[0057] Figure 8 The diagram is a distribution diagram of a coaxial radio frequency ground via hole on a microwave signal layer according to an embodiment of the present invention.

[0058] Fig. 9 The diagram is a distribution diagram of an embodiment of the radio frequency microstrip line ground via unit on the signal circuit layer of the present invention.

[0059] Fig.10 The diagram is a distribution diagram of a coaxial radio frequency ground via hole on a bottom ground layer according to an embodiment of the present invention.

[0060] Fig.11 It is a schematic diagram of an embodiment of the present invention in which the grounding holes of the frequency conversion receiving channel and the grounding holes of the pulse transmitting channel are staggeredly distributed.

[0061] Fig.12 The figure is a circuit diagram of an embodiment of the amplitude modulation and phase modulation circuit of the present invention.

[0062] Explanation of the reference numerals: 1-device carrier, 2-metal first enclosure, 3-metallized wire trough, 4-RF microstrip line, 5-carrier enclosure, 6-frequency conversion receiving channel first sub-cavity, 7-frequency conversion receiving channel second sub-cavity, 8-pulse transmission channel first sub-cavity, 9-pulse transmission channel second sub-cavity, 10-secondary mixer amplifier, 11-limited low noise amplifier circuit, 12-switch circuit, 13-switch filter circuit, 14-amplitude modulation and phase modulation circuit, 15-first-stage mixer filter amplifier circuit, 16-second-stage mixer amplifier circuit, 17-second-stage mixer post-low-pass filter circuit, 18-intermediate frequency amplifier circuit, 19-transmitting branch phase shift attenuation multifunctional circuit, 20-driving amplifier circuit, 21-power amplifier modulation circuit, 22-final power amplifier Amplifier circuit, 23-microwave signal layer intermediate frequency interface, 24-transmitting branch RF input interface, 25-local oscillator signal second input interface, 26-local oscillator signal first input interface, 27-RF receiving interface, 28-transmitting output interface, 29-microwave signal layer first power supply interface, 30-microwave signal layer second power supply interface, 31-microwave signal layer third power supply interface, 32-microwave signal layer fourth power supply interface, 33-microwave signal layer first control interface, 34-microwave signal layer second control interface, 35-microwave signal layer third control interface, 36-microwave signal layer fourth control interface, 37-microwave signal layer fifth control interface, 38-microwave signal layer sixth control interface, 39-metal second enclosure, 40-first-stage mixer Local oscillator signal amplifier circuit, 41-first-level mixer filter circuit, 42-first-level mixer circuit, 43-first-level mixer amplifier circuit, 44-second-level mixer local oscillator signal amplifier circuit, 45-second-level mixer circuit, 46-microwave signal layer, 47-ground plane layer, 48-signal circuit layer, 49-power circuit layer, 50-bottom ground layer, 51-ceramic dielectric layer, 52-microwave signal layer RF target interface, 53-RF first sub-via, 54-via RF microstrip line, 55-RF second sub-via, 56-bottom ground layer RF target interface, 57-quasi-coaxial first RF ground hole via, 58-quasi-coaxial second RF ground hole via, 59-frequency conversion receiving channel ground hole, 60-bottom ground layer intermediate frequency interface, 61-bottom ground 6-bottom layer RF transmitting branch RF input interface, 62-bottom layer grounding layer local oscillator signal second input interface, 63-bottom layer grounding layer local oscillator signal first input interface, 64-bottom layer grounding layer RF receiving input interface, 65-bottom layer grounding layer RF transmitting output interface, 66-bottom layer grounding layer first power supply interface, 67-bottom layer grounding layer second power supply interface, 68-bottom layer grounding layer third power supply interface, 69-bottom layer grounding layer fourth power supply interface, 70-bottom layer grounding layer first control interface, 71-bottom layer grounding layer second control interface, 72-bottom layer grounding layer third control interface, 73-bottom layer grounding layer fourth control interface, 74-bottom layer grounding layer fifth control interface, 75-bottom layer grounding layer sixth control interface, 76-RF via insulating dielectric layer,77-pulse transmission channel grounding hole, 78-quasi-coaxial third radio frequency grounding hole. DETAILED DESCRIPTION

[0063] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0064] In order to realize the miniaturization and high-precision packaging of frequency conversion devices and improve the anti-interference performance, the present invention provides a high-airtightness SIP frequency conversion device suitable for microwave communication. Specifically, the frequency conversion device includes:

[0065] A microwave communication device, packaged on a device carrier board 1, at least comprising a frequency conversion receiving channel for frequency conversion processing of microwave signals during microwave communication and a pulse transmission channel for modulation processing during microwave communication;

[0066] The sealed isolation cover is assembled on the device carrier 1, and the microwave communication device is sealed on the device carrier 1, and at least a frequency conversion receiving channel cavity and a pulse transmitting channel cavity are formed on the device carrier 1 through the sealed isolation cover, wherein:

[0067] The frequency conversion receiving channel is distributed in the frequency conversion receiving channel cavity, the pulse transmitting channel is distributed in the pulse transmitting channel cavity, and the frequency conversion receiving channel is electromagnetically isolated from the pulse transmitting channel by a sealed isolation cover;

[0068] When the frequency conversion receiving channel includes at least two mixer devices, at least electromagnetic isolation between the mixer devices is configured in the cavity of the frequency conversion receiving channel.

[0069] In order to meet the needs of microwave communication, the frequency conversion device of the present invention should include a microwave communication device, that is, the needs of microwave communication can be realized through the microwave communication device. Specifically, the microwave communication device is packaged on the device carrier 1, so as to support the microwave communication device by using the device carrier 1. The microwave communication device may include a frequency conversion receiving channel and a pulse transmission channel, wherein the frequency conversion processing of the microwave signal can be realized through the frequency conversion receiving channel, specifically, the frequency conversion processing can be such as increasing the frequency of the microwave signal or reducing the frequency of the microwave signal; the modulation processing of the microwave signal can be realized through the pulse transmission channel, specifically, the modulation processing of the microwave signal can be realized, such as driving and amplifying the microwave signal, therefore, the frequency conversion processing of the microwave signal by the frequency conversion receiving channel and the modulation processing of the microwave signal by the pulse transmission channel can be selected and determined according to the actual application scenario.

[0070] The microwave communication device packaged on the device carrier 1 can be sealed on the device carrier 1 by a sealing isolation cover. The sealing isolation cover should be a metal cover. At this time, the characteristics of the sealing isolation cover can be used to achieve electromagnetic isolation between the microwave communication device and the outside, and the sealing effect of the sealing isolation cover can meet the airtightness requirements of the frequency conversion device. Specifically, the airtightness requirements of the frequency conversion device are met, including meeting the gas sealing performance requirements of the microwave communication device and avoiding the ability of gas to penetrate or leak through the device carrier 1, so that the frequency conversion device has the advantages of high temperature resistance, corrosion resistance, and wear resistance.

[0071] In order to improve the anti-interference ability of the frequency conversion device, at least a frequency conversion receiving channel cavity and a pulse transmitting channel cavity can be formed on the device carrier 1 through a sealed isolation cover. Specifically, the formed frequency conversion receiving channel cavity and pulse transmitting channel cavity are isolated from each other. When the frequency conversion receiving channel is placed in the frequency conversion receiving channel cavity, and the pulse transmitting channel cavity is placed in the pulse transmitting channel cavity, electromagnetic isolation can be achieved between the frequency conversion receiving channel and the pulse transmitting channel. Therefore, it can be seen that the frequency conversion receiving channel and the pulse transmitting channel will not generate electromagnetic interference.

[0072] When the microwave signal is frequency-converted, the frequency conversion receiving channel should include at least one mixer device. When the frequency conversion receiving channel includes two or more mixer devices, it can be seen from the above description that adjacent mixer devices will also cause electromagnetic interference during mixing. In order to reduce or avoid electromagnetic interference between mixer devices, in one embodiment of the present invention, at least electromagnetic isolation between mixer devices is configured in the frequency conversion receiving channel cavity. Specifically, the electromagnetic isolation method between mixer devices can be selected according to needs, such as the mixer devices can be respectively located in the corresponding corresponding frequency conversion receiving channel sub-cavities. Of course, the frequency conversion receiving channel sub-cavities should have the ability of electromagnetic shielding.

[0073] In one embodiment of the present invention, the sealed isolation cover comprises a carrier wall 5 arranged on the device carrier 1, a metal frame located inside the carrier wall 5, and a metal cover plate for closing the carrier wall 5, wherein:

[0074] The metal enclosure is placed on the device carrier 1, and the metal enclosure is connected to the carrier wall 5 through adaptation, so as to form a frequency conversion receiving channel cavity and a pulse transmitting channel cavity on the device carrier 1, and the frequency conversion receiving channel cavity and the pulse transmitting channel cavity are isolated from each other;

[0075] When the frequency conversion receiving channel includes at least two mixer devices, the frequency conversion receiving channel cavity is configured by a metal frame to form at least two frequency conversion receiving channel sub-cavities.

[0076] The mixer devices in the frequency converter communication module are respectively located in the corresponding frequency converter receiving channel sub-cavities, the frequency converter receiving channel sub-cavities are interconnected through the metallized wire slots 3 that pass through the metal frame, and the RF microstrip lines 4 connecting the mixer devices pass through the metallized wire slots 3.

[0077] Figure 1 FIG. 1 shows an embodiment in which a sealing isolation cover is assembled on a device carrier 1. In the figure, the sealing isolation cover includes a carrier wall 5, which is fixed on the device carrier 1. The shape of the carrier wall 5 is generally consistent with the shape of the device carrier 1. Figure 1 In the embodiment, when the device carrier 1 is rectangular, the carrier wall 5 is also rectangular, and the carrier wall 5 extends vertically on the device carrier 1, so as to provide a space for accommodating the frequency conversion receiving channel and the pulse transmitting channel. The carrier wall 5 is generally open, and the carrier wall 5 can be closed by a metal cover. In this case, a sealed space can be formed by the carrier wall 5 and the metal cover. Figure 1 The distribution of the metal cover plate on the carrier wall 5 is not shown. The metal cover plate is fixedly connected to the carrier wall 5. For example, the metal cover plate can be fixed to the carrier wall 5 by parallel sealing welding. In addition, the metal cover plate can also be integrally formed with the carrier wall 5.

[0078] In order to form the frequency conversion receiving channel cavity and the pulse transmitting channel cavity, a metal frame should be provided inside the carrier wall 5. Figure 1 An embodiment of a metal enclosure is shown in FIG. 1 , in which the metal enclosure includes a first metal enclosure 2 and a second metal enclosure 39 . The first metal enclosure 2 and the second metal enclosure 39 are perpendicular to each other, thus forming a cross-shaped distribution form. Figure 1 In the figure, the length direction of the second metal enclosure 39 is consistent with the length direction of the carrier wall 5, and the length direction of the first metal enclosure 2 is consistent with the width direction of the carrier wall 5. The second metal enclosure 39 can be used to separate the frequency conversion receiving channel cavity and the pulse transmission channel cavity.

[0079] Generally, the first metal enclosure 2 and the second metal enclosure 39 are supported on the device carrier 1, and the first metal enclosure 2 and the second metal enclosure 39 are adaptably connected to the metal cover. At this time, the frequency conversion receiving channel cavity and the pulse transmitting channel cavity can be isolated from each other, that is, the frequency conversion receiving channel cavity and the pulse transmitting channel cavity are not connected to each other.

[0080] When the metal frame also includes a metal first enclosure 2, the frequency conversion receiving channel cavity is at least divided into a first sub-cavity 6 of the frequency conversion receiving channel and a second sub-cavity 7 of the frequency conversion receiving channel. At this time, the two mixer devices in the frequency conversion receiving channel can be respectively located in the first sub-cavity 6 of the frequency conversion receiving channel and the second sub-cavity 7 of the frequency conversion receiving channel. Figure 1In the embodiment, the metal first enclosure 2 is used to separate the pulse emission channel into a first sub-cavity 8 of the pulse emission channel and a second sub-cavity 9 of the pulse emission channel. At this time, the pulse emission channel can also be arranged in a divided cavity.

[0081] When the mixer devices are placed in the first sub-cavity 6 and the second sub-cavity 7 of the frequency conversion receiving channel respectively, the mixer devices should be electrically connected when the two mixer devices are electromagnetically connected, that is, they need to be connected to form a frequency conversion receiving channel. In order to meet the corresponding electrical connection requirements, Figure 2 An embodiment is shown in the figure, in which a metallized wire groove 3 is provided at the lower part of the metal first enclosure 2, and the metallized wire groove 3 passes through the metal first enclosure 2. The first sub-cavity 6 of the frequency conversion receiving channel can be connected with the corresponding second sub-cavity 7 of the frequency conversion receiving channel through the corresponding metallized wire groove 3. At this time, the corresponding RF microstrip line 4 can pass through the metallized wire groove 3 to realize the electrical connection of the two corresponding mixer devices. Of course, when the pulse transmission channel cavity is separated by the metal first enclosure 2 to form the first sub-cavity 8 of the pulse transmission channel and the second sub-cavity 9 of the pulse transmission channel, the metallized wire groove 3 is also required to be provided on the metal first enclosure 2 to meet the connection requirements of the corresponding devices in the pulse transmission channel.

[0082] In specific implementation, the carrier wall 5 should be made of metal, and the metal frame can be selected according to the actual conditions of the frequency conversion receiving channel and the pulse transmission channel, so as to meet the requirements of forming the required frequency conversion receiving channel cavity and the pulse transmission channel cavity. The first metal enclosure 2 and the second metal enclosure 39 are in the shape of a flat plate. It can be understood that the second metal enclosure 39 is a solid structure, and the area on the first metal enclosure 2 except for the metallized wire slot 3 is preferably a solid structure to improve the electromagnetic shielding effect.

[0083] In one embodiment of the present invention, when the frequency conversion receiving channel includes two mixer devices, the frequency conversion receiving channel includes a primary mixer device and a secondary mixer device, wherein:

[0084] The first-order mixing device is distributed in one frequency conversion receiving channel sub-cavity, and the second-order mixing device is distributed in another frequency conversion receiving channel sub-cavity;

[0085] The first-stage mixer device and the second-stage mixer device are electrically connected to form a frequency conversion receiving channel after the electrical connection is adapted;

[0086] When the microwave signal is frequency-converted, the microwave signal is mixed by a first-stage mixer and a second-stage mixer in sequence, and a corresponding intermediate frequency microwave signal is generated after the second-stage mixer.

[0087] Specifically, when the frequency conversion receiving channel includes two mixer devices, the frequency converter communication module can be composed of a first-level mixer device and a second-level mixer device, that is, a frequency conversion receiving channel can be formed by connecting the first-level mixer device and the second-level mixer device. It can be seen that the first-level mixer device and the second-level mixer device each include a mixer device.

[0088] It can be seen from the above description that when the frequency conversion communication device includes two mixer devices, the frequency conversion receiving channel cavity is divided into a first sub-cavity 6 of the frequency conversion receiving channel and a second sub-cavity 7 of the frequency conversion receiving channel. The first-level mixing interval can be arranged in the first sub-cavity 6 of the frequency conversion receiving channel or the second sub-cavity 7 of the frequency conversion receiving channel, and the second-level mixing device can be arranged in the second sub-cavity 7 of the frequency conversion receiving channel or the first sub-cavity 6 of the frequency conversion receiving channel. The distribution positions of the first-level mixing device and the second-level mixing device can be selected according to actual needs, specifically based on whether they can be connected to form a frequency conversion receiving channel and can achieve electromagnetic isolation between the two mixer devices. Figure 3 An embodiment of the first sub-cavity 6 of the frequency conversion receiving channel and the second sub-cavity 7 of the frequency conversion receiving channel is shown in the figure. In the figure, the first sub-cavity 6 of the frequency conversion receiving channel and the second sub-cavity 7 of the frequency conversion receiving channel are located on both sides of the first metal enclosure 2. In addition, the first-stage mixing device is located in the second sub-cavity 7 of the frequency conversion receiving channel. At this time, the second-stage mixing device is located in the first sub-cavity 6 of the frequency conversion receiving channel.

[0089] When a frequency conversion receiving channel is formed by a first-level mixer and a second-level mixer, and a microwave signal is frequency converted by the frequency conversion receiving channel, the microwave signal is mixed by the first-level mixer and the second-level mixer in turn, and the corresponding intermediate frequency is generated by the second-level mixer. Figure 4 In the figure, IF is the intermediate frequency microwave signal, and RX-in is the microwave input signal before entering the first-stage mixing device.

[0090] In one embodiment of the present invention, the first-stage frequency mixer device comprises a limiting low-noise amplifier circuit 11, a switch circuit 12, a switch filter circuit 13, an amplitude modulation and phase modulation circuit 14, and a first-stage frequency mixer filter amplifier circuit 15 connected in sequence.

[0091] The secondary frequency mixer device includes a secondary frequency mixer amplifier circuit 16, a secondary frequency mixer post-low-pass filter circuit 17 and an intermediate frequency amplifier circuit 18 connected in sequence, wherein:

[0092] The first-stage mixer filter amplifier circuit 15 and the second-stage mixer amplifier circuit 16 are adaptively connected through the radio frequency microstrip line 4 passing through the metallized line slot 3, so as to configure the first-stage mixer device and the second-stage mixer device to be adaptively connected;

[0093] When the microwave signal is subjected to frequency conversion processing, the microwave signal is sequentially passed through the limiting low noise amplifier circuit 11, the switch circuit 12, the switch filter circuit 13, the amplitude modulation and phase modulation circuit 14, and is subjected to the first preset mixing processing through the first-stage mixer filter amplifier circuit 15, so as to generate a first-stage mixed microwave signal after the first preset mixing processing;

[0094] The microwave signal after the primary mixing is transmitted to the secondary mixing amplifier circuit 16 via the radio frequency microstrip line 4, and is subjected to a second preset mixing process by the secondary mixing amplifier circuit 16 to generate a secondary mixed microwave signal after the second preset mixing process;

[0095] The microwave signal after the secondary mixing is processed by the secondary mixing low-pass filter circuit 17 and the intermediate frequency amplifier circuit 18 to generate a corresponding intermediate frequency signal.

[0096] Figure 3 and Figure 4 FIG. 1 shows a circuit block diagram of an embodiment of a first-stage mixer device and a second-stage mixer device of the present invention. Figure 3 and Figure 4 In the embodiment, the first-stage frequency mixer device includes a limiting low-noise amplifier circuit 11, a switch circuit 12, a switch filter circuit 13, an amplitude modulation and phase modulation circuit 14, and a first-stage frequency mixer filter amplifier circuit 15. Figure 4 In the example, the microwave signal RX-in first enters the limiting low-noise amplifier circuit 11, and performs limiting processing and amplification processing by using the limiting low-noise amplifier circuit 11. The limiting low-noise amplifier circuit 11 may include a limiting circuit and a low-noise amplifier circuit, wherein the limiting circuit can realize the limiting processing of the microwave signal RX-in, and the low-noise amplifier circuit can realize the amplification of the microwave signal after limiting. The switch circuit 12 can adopt the existing commonly used microwave switch, and the switch circuit 12 can realize the on-off control of the frequency conversion receiving channel and detect the on-off state of the pulse transmission channel. For example, the frequency conversion receiving channel can be controlled to be in the working state by the switch circuit 12. At this time, the frequency conversion receiving channel can be used to realize the frequency conversion processing, or the on-off state of the pulse transmission channel can be detected, thereby judging the pulse transmission state of the pulse transmission channel.

[0097] The switch filter circuit 13 can filter the microwave signal, and the amplitude modulation and phase modulation circuit 14 is used to perform amplitude modulation and / or phase modulation on the signal output by the switch filter circuit 13. Fig.12 An embodiment of an amplitude modulation and phase modulation circuit 14 is shown in the figure. In the figure, resistors R1 to R8 are resistors for amplitude modulation, and Z1 to Z9 are devices for phase modulation. In order to realize amplitude modulation or phase modulation control, the connection of resistors or phase modulation devices can be selected through bonding wires, that is, when different resistors or phase modulation devices are selected for connection, the corresponding amplitude modulation and phase modulation circuits can be obtained. Fig.12In the figure, RFin is the input end of the amplitude modulation phase modulation circuit 14, and RFout is the output end of the amplitude modulation phase modulation circuit 14, that is, the amplitude modulation phase modulation circuit 14 is connected to the output end of the switching filter circuit 13 through the input end RFin, and the amplitude modulation phase modulation circuit 14 is connected to the first-stage mixing filter amplifier circuit 15 through the output end RFout.

[0098] Figure 4 1 also shows a structural block diagram of an embodiment of the first-stage mixer filter amplifier circuit 15. In the figure, the first-stage mixer filter amplifier circuit 15 includes a first-stage mixer local oscillator signal amplifier circuit 40, a first-stage mixer filter circuit 41, a first-stage mixer circuit 42 and a first-stage mixer amplifier circuit 43, wherein the first-stage mixer local oscillator signal amplifier circuit 40 receives the first-stage mixer local oscillator signal, and the first-stage mixer amplifier circuit 43 receives the output of the amplitude modulation and phase modulation circuit 14. Thereafter, the first-stage mixer circuit 42 mixes the corresponding outputs of the first-stage mixer local oscillator signal amplifier circuit 40 and the first-stage mixer amplifier circuit 43, and after mixing, the first-stage mixer filter circuit 41 filters the first-stage mixer filter circuit 41, and the output of the first-stage mixer filter circuit 41 is used as the output of the first-stage mixer filter amplifier circuit 15. In specific implementation, the first-stage mixer local oscillator signal amplifier circuit 40, the first-stage mixer filter circuit 41, the first-stage mixer circuit 42 and the first-stage mixer amplifier circuit 43 can adopt existing commonly used circuit forms, which can meet the required mixing.

[0099] Figure 4 The figure also shows a structural block diagram of an embodiment of a secondary frequency mixer amplifier circuit 16. In the figure, the secondary frequency mixer amplifier circuit 16 includes a secondary frequency mixer local oscillator signal amplifier circuit 44, a secondary frequency mixer circuit 45 and a secondary frequency mixer amplifier 10, wherein the secondary frequency mixer local oscillator signal amplifier circuit 44 receives a secondary frequency mixer local oscillator signal, and the secondary frequency mixer amplifier 10 receives the output of the primary frequency mixer filter amplifier circuit 15. Thereafter, the secondary frequency mixer circuit 45 mixes the corresponding outputs of the secondary frequency mixer local oscillator signal amplifier circuit 44 and the secondary frequency mixer amplifier 10, and outputs them after mixing to obtain a microwave signal after secondary mixing. In specific implementation, the secondary frequency mixer local oscillator signal amplifier circuit 44, the secondary frequency mixer circuit 45 and the secondary frequency mixer amplifier 10 can adopt existing commonly used circuit forms, which can meet the required mixing.

[0100] The microwave signal after secondary mixing is subjected to low-pass filtering by the low-pass filtering circuit 17 after secondary mixing and to intermediate frequency amplification by the intermediate frequency amplifier circuit 18, after which a corresponding intermediate frequency signal can be generated; in specific implementation, the low-pass filtering circuit 17 after secondary mixing and the intermediate frequency amplifier circuit 18 can adopt existing commonly used forms so as to satisfy the requirements of low-pass filtering and intermediate frequency amplification.

[0101] In one embodiment of the present invention, the pulse transmission channel includes a transmission branch phase shift attenuation multifunctional circuit 19, a driving amplifier circuit 20 and a final power amplifier circuit 22 connected in sequence, wherein:

[0102] When modulating a microwave signal, the microwave signal is processed in sequence by the transmitting branch phase shift attenuation multifunctional circuit 19, the driving amplifier circuit 20 and the final power amplifier circuit 22, and a modulated microwave signal is generated by the final power amplifier circuit 22.

[0103] Figure 3 and Figure 4 An embodiment of a pulse transmission channel is also shown, and the pulse transmission channel may include at least a transmission branch phase shift attenuation multifunctional circuit 19, a driving amplifier circuit 20 and a final power amplifier circuit 22. Figure 4 In the figure, TX-in is the microwave signal loaded into the transmitting branch phase shift attenuation multifunctional circuit 19, and TX-out is the microwave signal output after being modulated by the transmitting branch phase shift attenuation multifunctional circuit 19 through the final power amplifier circuit 22. The transmitting branch phase shift attenuation multifunctional circuit 19 mainly performs necessary modulation processing on the microwave signal, and the modulation processing method and type of the transmitting branch phase shift attenuation multifunctional circuit 19 can be selected according to actual needs, so as to meet the actual application requirements. The driving amplifier circuit 20 and the final power amplifier circuit 22 can adopt the existing commonly used amplifier circuit form, so as to meet the requirements of amplifying and outputting the modulated microwave signal.

[0104] In one embodiment of the present invention, the pulse transmission channel further includes a power amplifier modulation circuit 21 adaptively connected to the final power amplifier circuit 22, wherein:

[0105] The pulse emission channel cavity includes a pulse emission channel first sub-cavity 8 and a pulse emission channel second sub-cavity 9.

[0106] The first sub-cavity 8 of the pulse emission channel and the second sub-cavity 9 of the pulse emission channel are connected to each other;

[0107] The transmitting branch phase shift attenuation multifunctional circuit 19 and the driving amplifier circuit 20 are located in the first sub-cavity 8 of the pulse transmitting channel, and the power amplifier modulation circuit 21 and the final stage power amplifier circuit 22 are located in the second sub-cavity 9 of the pulse transmitting channel.

[0108] In order to control the amplification state of the final power amplifier circuit 22, a power amplifier modulation circuit 21 can also be set in the pulse transmission channel, that is, the power amplifier modulation circuit 21 can be used to modulate the pulse of the signal transmitted by the final power amplifier circuit 22. The circuit form adopted by the power amplifier modulation circuit 21 and the way in which the power amplifier modulation circuit 21 modulates the amplification state of the final power amplifier circuit 22 can be consistent with the existing technology and will not be explained here.

[0109] From the above description, it can be seen that the pulse emission channel cavity can be divided into a first sub-cavity 8 of the pulse emission channel and a second sub-cavity 9 of the pulse emission channel by using the first metal enclosure 2. At this time, the first sub-cavity 8 of the pulse emission channel and the second sub-cavity 9 of the pulse emission channel are interconnected. Figure 3 In the embodiment, the multifunctional circuit 19 for phase shift attenuation of the transmitting branch and the driving amplifier circuit 20 are located in the first sub-cavity 8 of the pulse transmitting channel, and the power amplifier modulation circuit 21 and the final power amplifier circuit 22 are located in the second sub-cavity 9 of the pulse transmitting channel. It can be understood that after the multifunctional circuit 19 for phase shift attenuation of the transmitting branch and the driving amplifier circuit 20 are located in the first sub-cavity 8 of the pulse transmitting channel, and the power amplifier modulation circuit 21 and the final power amplifier circuit 22 are located in the second sub-cavity 9 of the pulse transmitting channel, the electromagnetic isolation between the multifunctional circuit 19 for phase shift attenuation of the transmitting branch and the driving amplifier circuit 20 and the power amplifier modulation circuit 21 and the final power amplifier circuit 22 can be achieved, and the self-excitation phenomenon caused by the direct connection of the driving amplifier circuit 20 and the final power amplifier circuit 22 in the same cavity can be avoided, and the stability and reliability of the operation of the pulse transmitting channel can be further improved.

[0110] In one embodiment of the present invention, the device substrate 1 includes a plurality of substrate functional layers and a ceramic dielectric layer 51 for spacing two adjacent substrate functional layers, wherein:

[0111] The functional layers of the device carrier 1 are sequentially configured as a microwave signal layer 46, a ground plane layer 47, a signal circuit layer 48, a power circuit layer 49 and a bottom ground layer 50.

[0112] The microwave communication device is packaged on the microwave signal layer 46, and the sealing isolation cover is fixed on the microwave signal layer 46;

[0113] A microwave signal layer radio frequency interface group adapted to the microwave communication device is arranged on the microwave signal layer 46, and the microwave signal layer radio frequency interface group includes a plurality of microwave signal layer radio frequency interfaces;

[0114] A bottom ground layer RF interface group is provided on the bottom ground layer 50, and the bottom ground layer RF interface group includes a plurality of bottom ground layer RF interfaces, wherein:

[0115] The microwave signal layer radio frequency interface corresponds to the bottom ground layer radio frequency interface one by one, and the microwave signal layer radio frequency interface is electrically connected to the corresponding bottom ground layer radio frequency interface through a stepped radio frequency via.

[0116] In order to further improve the airtightness of the frequency conversion device, in one embodiment of the present invention, the device carrier 1 includes a plurality of carrier functional layers, and a ceramic dielectric layer 51 is arranged between any two carrier functional layers, that is, any two carrier functional layers are separated by the ceramic dielectric layer 51. Of course, the carrier functional layer is connected to the corresponding adjacent ceramic dielectric layer 51, and the ceramic dielectric layer 51 can be made of existing commonly used ceramic materials.

[0117] Figure 5 An embodiment of the device carrier 1 is shown in FIG. Figure 5 As can be seen from the example shown in the figure, the functional layers of the carrier board in the device carrier board 1 are sequentially configured as a microwave signal layer 46, a ground plane layer 47, a signal circuit layer 48, a power circuit layer 49 and a bottom ground layer 50; it can be seen that the microwave signal layer 46 and the ground plane layer 47 are separated by a ceramic dielectric layer 51, and the ground plane layer 47 is separated from the signal circuit layer 48 by a ceramic dielectric layer 51. Other ways of achieving separation using the ceramic dielectric layer 51 can be referred to Figure 5 As well as the explanation here, I will not go into details one by one. Figure 5 In the illustrated embodiment of the device carrier 1 , the device carrier 1 includes four ceramic dielectric layers 51 . In other cases, the specific number of the ceramic dielectric layers 51 can be determined.

[0118] In specific implementation, the power circuit layer 49 is used for wiring of the power circuit, that is, the power supply circuit is arranged in the power circuit layer 49; the signal circuit layer 48 is used for wiring of the signal circuit, that is, the wiring of control signals can be realized through the signal circuit layer 48; the microwave signal layer 46 is used for wiring the radio frequency circuit and placing the required chips. The bottom ground layer 50 is the grounding layer, which is used to assemble the frequency conversion device to the target position. At the same time, the bottom of the bottom ground layer 50 is grounded over a large area, which can play a role in heat dissipation. The ground plane layer 47 mainly acts as a ground plane to provide a flat and continuous surface. The ground plane layer 47 can isolate the microwave signal layer 46 from the signal circuit layer 48, that is, to provide support for the reciprocating microwave signals, which can be conducive to stable signal transmission and reduce signal interference and reflection; it can also effectively reduce the impact of external electromagnetic interference on the signal, and ensure the purity and stability of the signal; in addition, it can also optimize the performance of the radio frequency system and improve the frequency stability and anti-interference ability.

[0119] As can be seen from the above description, the device carrier 1 includes a plurality of carrier functional layers, different circuits are arranged on corresponding carrier functional layers, and dielectric isolation is performed through the ceramic dielectric layer 51. In addition, the stacking form of the carrier functional layer and the ceramic dielectric layer 51 of the device carrier 1, and the layered arrangement of the carrier functional layer can prevent microwave signals from interfering with each other through power lines, etc., and improve the reliability of microwave communication.

[0120] In specific implementation, the microwave communication device is packaged on the microwave signal layer 46, that is, the frequency conversion receiving channel and the pulse transmission channel are both assembled on the microwave signal layer 46, and the sealing isolation cover is fixed on the microwave signal layer 46. At this time, an airtight environment for the microwave communication module can be provided. Under the condition of satisfying airtightness, in order to achieve the corresponding electrical connection between the frequency conversion receiving channel and the pulse transmission channel, a microwave signal layer RF interface group should be set on the microwave signal layer 46. In addition, a bottom ground layer RF interface group should be set on the bottom ground layer 50, and the bottom ground layer RF interface group is used to cooperate with the microwave signal layer RF interface group to achieve adaptive connection with the microwave communication device.

[0121] The microwave signal layer RF interface group includes multiple microwave signal layer RF interfaces, and the bottom ground layer RF interface group includes multiple bottom ground layer RF interfaces. Generally, the microwave signal layer RF interface corresponds to the bottom ground layer RF interface one by one, that is, one microwave signal layer RF interface corresponds to one bottom ground layer RF interface, so that the corresponding microwave signal layer RF interface can be led out by using the bottom ground RF interface. In order to improve the airtightness of the frequency conversion device, in one embodiment of the present invention, the microwave signal layer RF interface is electrically connected to the corresponding bottom ground layer RF interface through a stepped RF via. The specific form of the stepped RF via is explained below.

[0122] It should be noted that after the microwave communication device is packaged on the microwave signal layer 46, the microwave communication device is connected to the corresponding microwave signal layer radio frequency interface by means of bonding wires, etc. Figure 3 An embodiment of setting a microwave signal layer RF interface on a microwave signal layer 46 is shown in the figure. In the figure, the microwave signal layer RF interface in the microwave signal layer RF interface group includes a microwave signal layer intermediate frequency interface 23, a transmitting branch RF input interface 24, a local oscillator signal first input interface 26, a local oscillator signal second input interface 25, a RF receiving interface 27 and a transmitting output interface 28, wherein:

[0123] The microwave signal layer intermediate frequency interface 23 is connected to the intermediate frequency amplifier circuit 18, that is, the intermediate frequency can be led out to the corresponding bottom ground layer radio frequency interface on the bottom ground layer 50 through the microwave signal layer intermediate frequency interface 23; Figure 6 In the figure, an embodiment of the distribution of the bottom ground layer RF interface on the bottom ground layer 50 is shown. In the figure, the bottom ground layer IF interface 60 is the bottom ground layer RF interface that corresponds to the microwave signal layer IF interface 23. The microwave signal layer IF interface 23 is adaptively connected to the bottom ground layer IF interface 60 through a corresponding stepped RF via. After that, the IF microwave signal can be transmitted outward through the bottom ground layer IF interface 60.

[0124] The transmitting branch RF input interface 24 is adaptively electrically connected to the transmitting branch phase shift and attenuation multifunctional circuit 19. On the bottom ground layer 50, the bottom ground layer RF transmitting branch RF input interface 61 is the bottom ground layer RF interface that corresponds to the transmitting branch RF input interface 24. Thus, the transmitting branch RF input interface 24 can be adaptively connected to the bottom ground layer RF transmitting branch RF input interface 61 through the corresponding stepped RF vias. Thereafter, the microwave signal TX-in can be loaded into the transmitting branch phase shift and attenuation multifunctional circuit 19 through the bottom ground layer RF transmitting branch RF input interface 61 via the stepped RF vias and the transmitting branch RF input interface 24.

[0125] The second input interface 25 of the local oscillator signal is adaptively connected to the secondary mixer local oscillator signal amplifier circuit 44 in the secondary mixer amplifier circuit 16, so as to load the secondary mixer local oscillator signal to the secondary mixer local oscillator signal amplifier circuit 44 by using the second input interface 25 of the local oscillator signal. Specifically, on the bottom ground layer 50, the second input interface 62 of the local oscillator signal of the bottom ground layer is the radio frequency interface of the bottom ground layer that corresponds to the second input interface 25 of the local oscillator signal, thereby, the second input interface 25 of the local oscillator signal is adaptively connected to the second input interface 62 of the local oscillator signal of the bottom ground layer through the corresponding stepped radio frequency via, and thereafter, the secondary mixer local oscillator signal can be loaded to the secondary mixer local oscillator signal amplifier circuit 44 through the second input interface 62 of the local oscillator signal of the bottom ground layer, the corresponding stepped radio frequency via and the second input interface 25 of the local oscillator signal.

[0126] The first input interface 26 of the local oscillator signal is adaptively connected to the first-stage mixer local oscillator signal amplifier circuit 40 in the first-stage mixer filter amplifier circuit 15, so as to load the first-stage mixer local oscillator signal to the first-stage mixer local oscillator signal amplifier circuit 40 by using the first input interface 26 of the local oscillator signal. Specifically, on the bottom ground layer 50, the first input interface 63 of the local oscillator signal of the bottom ground layer is a bottom ground layer radio frequency interface that corresponds to the first input interface 26 of the local oscillator signal, thereby, the first input interface 26 of the local oscillator signal is adaptively connected to the first input interface 63 of the local oscillator signal of the bottom ground layer through the corresponding stepped radio frequency via, and thereafter, the first-stage mixer local oscillator signal can be loaded to the first-stage mixer local oscillator signal amplifier circuit 40 through the first input interface 63 of the local oscillator signal of the bottom ground layer, the corresponding stepped radio frequency via and the first input interface 26 of the local oscillator signal.

[0127] The RF receiving interface 27 is electrically connected to the limiting low noise amplifier circuit 11, that is, the microwave signal RX-in can be loaded into the limiting low noise amplifier circuit 11 through the RF receiving interface 27. Figure 6In the figure, the bottom ground layer RF receiving input interface 64 is the bottom ground layer RF interface that corresponds to the RF receiving interface 27. Thus, the RF receiving interface 27 is adaptively connected to the bottom ground layer RF receiving input interface 64 through the corresponding stepped RF via. Thereafter, the microwave signal RX-in is loaded into the limiting low noise amplifier circuit 11 through the bottom ground layer RF receiving input interface 64, the stepped RF via and the RF receiving interface 27.

[0128] The transmitting output interface 28 is electrically connected to the final power amplifier circuit 22, that is, the microwave signal TX-out output by the final power amplifier circuit 22 is output through the transmitting output interface 28 and can be led to the RF transmitting output interface 65 of the bottom ground layer, that is, Figure 6 The bottom ground layer RF transmission output interface 65 is the bottom ground layer RF interface that corresponds to the transmission output interface 28. Therefore, the transmission output interface 28 is adaptively connected to the bottom ground layer RF transmission output interface 65 through the corresponding stepped RF vias. After that, the microwave signal TX-out can be led out to the bottom ground layer RF transmission output interface 65 through the transmission output interface 28 and the corresponding stepped RF vias, and can be output externally through the bottom ground layer RF transmission output interface 65.

[0129] When the microwave signal layer RF interface in the microwave signal layer RF interface group is other cases, please refer to the above description, which will not be repeated here. It can be seen from the above description that a microwave signal layer RF interface is connected to the corresponding bottom ground layer RF interface through a corresponding stepped RF via, so when the number of microwave signal layer RF interfaces is determined, the corresponding stepped RF vias in the device carrier 1 can be determined. It should be understood that the use of stepped RF vias can not only achieve the adaptive connection between the microwave signal layer RF interface and the corresponding bottom ground layer RF interface, but also effectively improve the airtightness of the RF device.

[0130] In one embodiment of the present invention, any stepped RF via includes a RF first sub-via 53, a via RF microstrip line 54 and a RF second sub-via 55, wherein:

[0131] One end of the first RF sub-via 53 is electrically connected to the RF interface of the microwave signal layer, the other end of the first RF sub-via is electrically connected to one end of the via RF microstrip line 54, the other end of the via RF microstrip line 54 is connected to one end of the second RF sub-via 55, and the other end of the second RF sub-via 55 is electrically connected to a corresponding RF interface of the bottom ground layer.

[0132] Figure 7An embodiment of a stepped RF via is shown in the figure. In the figure, the stepped RF via mainly includes a first RF sub-via 53, a via RF microstrip line 54 and a second RF sub-via 55, wherein the two ends of the via RF microstrip line 54 are electrically connected to the first RF sub-via 53 and the second RF sub-via 55 respectively, and the first RF sub-via 53, the via RF microstrip line 54 and the second RF sub-via 55 are stepped.

[0133] Specifically, the first RF sub-via 53 is electrically connected to the microwave signal layer RF target interface 52, and the second RF sub-via 55 is electrically connected to the bottom ground layer RF target interface 56, so that the microwave signal layer RF target interface 52 and the bottom ground layer RF target interface 56 can be electrically connected. It can be understood that the microwave signal layer RF target interface 52 is one of the microwave signal layer intermediate frequency interface 23, the transmitting branch RF input interface 24, the local oscillator signal second input interface 25, the local oscillator signal first input interface 26, the RF receiving interface 27 and the transmitting output interface 28. It can be seen that the bottom ground layer RF target interface 56 is one of the bottom ground layer intermediate frequency interface 60, the bottom ground layer RF transmitting branch RF input interface 61, the bottom ground layer local oscillator signal second input interface 62, the bottom ground layer local oscillator signal first input interface 63, the bottom ground layer RF receiving input interface 64, and the bottom ground layer RF transmitting output interface 65.

[0134] In one embodiment of the present invention, the via-hole RF microstrip line 54 is located in the signal circuit layer 48;

[0135] The first radio frequency sub-via 53 vertically penetrates the microwave signal layer 46, the ground plane layer 47, and the ceramic dielectric layer 51 between the microwave signal layer 46 and the ground plane layer 47;

[0136] The radio frequency second sub-via 55 vertically penetrates at least the power circuit layer 49, the bottom ground layer 50, and the ceramic dielectric layer 51 between the power circuit layer 49 and the bottom ground layer 50;

[0137] A via-to-ground hole unit is provided on the outer circles of the first RF sub-via 53 and the second RF sub-via 55 , wherein the via-to-ground hole unit includes a plurality of via-to-ground holes, and the via-to-ground holes surround the corresponding first RF sub-via 53 and the second RF sub-via 55 .

[0138] Figure 7 As shown in the figure, in the stepped RF via, the via RF microstrip line 54 is located in the signal circuit layer 48. At this time, the RF first sub-via 53 and the RF second sub-via 55 can be symmetrically distributed with the via RF microstrip line 54 to improve the reliability of the process.

[0139] The first RF sub-via 53 and the second RF sub-via 55 may adopt the same form, generally including a contact hole, a metal column filled in the contact hole, and an RF via insulating dielectric layer 76 for wrapping the metal column. Figure 7 In the figure, the first RF sub-via 53 vertically penetrates the microwave signal layer 46, the ground plane layer 47, and the ceramic dielectric layer 51 between the microwave signal layer 46 and the ground plane layer 47; in addition, the second RF sub-via 55 vertically penetrates at least the power circuit layer 49, the bottom ground layer 50, and the ceramic dielectric layer 51 between the power circuit layer 49 and the bottom ground layer 50. It should be noted that in order to be connected to the via RF microstrip line 54, the second RF sub-via 55 should also penetrate the signal circuit layer 48.

[0140] In order to further improve the anti-interference capability, via-to-ground hole units are provided on the outer circles of the first RF sub-via 53 and the second RF sub-via 55, such as Figure 8 As shown, an embodiment of setting a via-ground hole unit on the outer ring of the first RF sub-via 53 is shown. Fig.10 An embodiment of providing a via-to-ground via unit on the outer ring of the second RF sub-via 55 is shown in FIG. Figure 8 In the embodiment, the via ground hole unit includes a plurality of quasi-coaxial third RF ground hole vias 78 surrounding the RF first sub-via 53, Fig.10 In the via ground hole unit, a plurality of quasi-coaxial second RF ground hole vias 58 surrounding the RF second sub-via 55 are included. In a specific implementation, the quasi-coaxial third RF ground hole via 78 and the quasi-coaxial second RF ground hole via 58 can be prepared by opening a hole and filling the hole with a metal column. Generally, the height of the quasi-coaxial third RF ground hole via 78 is preferably consistent with the height of the RF first sub-via 53, and the height of the quasi-coaxial second RF ground hole via 58 is preferably consistent with the height of the RF second sub-via 55. The height of the RF first sub-via 53 specifically refers to the distance between the two ends of the RF first sub-via 53.

[0141] In order to further improve the anti-interference capability, a radio frequency microstrip line ground hole via unit can be provided outside the via radio frequency microstrip line 54. Fig. 9 An embodiment of an RF microstrip line ground hole via unit is shown in the figure. In the figure, the RF microstrip line ground hole via unit includes a plurality of quasi-coaxial first RF ground hole vias 57. The situation of the quasi-coaxial first RF ground hole vias 57 can refer to the corresponding description of the above-mentioned quasi-coaxial third RF ground hole vias 78, which will not be repeated here.

[0142] In specific implementation, the quasi-coaxial third RF ground hole via 78 will penetrate the ground plane layer 47 and also penetrate the two ceramic dielectric layers 51. Similarly, the quasi-coaxial first RF ground hole via 57 and the quasi-coaxial second RF ground hole via 58 will penetrate the signal circuit layer 48, the power circuit layer 49 and the bottom ground layer 50 at the same time. Of course, at this time, they will also penetrate the two separated ceramic dielectric layers 51. Preferably, the same quasi-coaxial ground hole via structure can be set in the non-wiring area of ​​each carrier functional layer to further improve the anti-interference ability of microwave signals.

[0143] It can be seen from the above description that the quasi-coaxial first RF ground hole via 57, the quasi-coaxial second RF ground hole via 58, and the quasi-coaxial third RF ground hole via 78 are corresponding embodiments of the via-to-ground holes. Of course, the via-to-ground holes in the via-to-ground hole unit can also adopt other implementation forms, which can be selected according to needs.

[0144] In one embodiment of the present invention, the frequency conversion receiving channel and the pulse transmitting channel are bonded to the microwave signal layer 46 by high temperature conductive adhesive;

[0145] The corresponding grounding terminal in the frequency conversion receiving channel is connected to the bottom grounding layer 50 through the corresponding frequency conversion receiving channel grounding hole 59.

[0146] The corresponding grounding terminal in the pulse transmission channel is adaptively connected to the bottom grounding layer 50 through the corresponding pulse transmission channel grounding hole 77;

[0147] All the frequency conversion receiving channel grounding holes 59 and the pulse transmitting channel grounding holes 77 are arranged in a staggered manner.

[0148] In specific implementation, the frequency conversion receiving channel and the pulse transmitting channel are bonded to the microwave signal layer 46 by high-temperature conductive adhesive. For example, the limiting low-noise amplifier circuit 11 described above can be bonded to the microwave signal layer 46 by high-temperature conductive adhesive. The high-temperature conductive adhesive can adopt the existing commonly used form, so as to adapt and bond the frequency conversion receiving channel and the pulse transmitting channel to the microwave signal layer 46.

[0149] The corresponding grounding terminal in the frequency conversion receiving channel specifically refers to the grounding terminal of the corresponding circuit in the frequency conversion receiving channel, such as the limiting low-noise amplifier circuit 11, the switching circuit 12, the switching filter circuit 13, the amplitude modulation and phase modulation circuit 14, the first-level mixing filter amplifier circuit 15, the second-level mixing amplifier circuit 16, the first-level mixing post-low-pass filter circuit 17, and the intermediate frequency amplifier circuit 18. The corresponding grounding terminal in the frequency conversion receiving channel is adaptively connected to the bottom ground layer 50 through a frequency conversion receiving channel grounding hole 59.

[0150] The corresponding grounding terminal in the pulse transmission channel can refer to the description of the corresponding grounding terminal in the above-mentioned frequency conversion receiving channel, which will not be repeated here. From the above description, it can be seen that a grounding terminal in the pulse transmission channel is adaptively connected to the bottom grounding layer 50 through a pulse transmission channel grounding hole 77.

[0151] In a specific implementation, all the variable frequency receiving channel grounding holes 59 and the pulse transmitting channel grounding holes 77 are staggered. The staggered distribution specifically refers to the variable frequency receiving channel grounding holes 59, the pulse transmitting channel grounding holes 77, and the variable frequency receiving channel grounding holes 59 and the pulse transmitting channel grounding holes 77 are all in a staggered distribution state, such as Fig.11 As shown, the anti-interference capability can be further improved by adopting a staggered distribution state.

[0152] In specific implementation, after the frequency conversion receiving channel and the pulse transmitting channel are bonded to the microwave signal layer 46 by high temperature conductive adhesive, the corresponding grounding terminals will be electrically connected to the frequency conversion receiving channel grounding holes 59 and the pulse transmitting channel grounding holes 77. Therefore, the frequency conversion receiving channel grounding holes 59 and the pulse transmitting channel grounding holes 77 can be prepared in advance in the device carrier 1 and arranged in a staggered distribution state.

[0153] In order to ensure the normal operation of microwave communication devices, a microwave signal layer power interface group and a microwave signal layer control interface group are also set on the microwave signal layer 46. At the same time, a bottom ground layer power interface group and a bottom ground layer control interface group should also be set on the bottom ground layer 50. Figure 3 FIG. 1 shows an embodiment of a microwave signal layer power interface group and a microwave signal layer control interface group. Figure 6 An embodiment of a bottom ground layer power interface group and a bottom ground layer control interface group is shown in the figure, and a specific description is given below.

[0154] Figure 3 In the figure, the microwave signal layer power interface group includes a first power supply interface 29 of the microwave signal layer, a second power supply interface 30 of the microwave signal layer, a third power supply interface 31 of the microwave signal layer, and a fourth power supply interface 32 of the microwave signal layer. The first power supply interface 29 of the microwave signal layer and the second power supply interface 30 of the microwave signal layer can be used to power the frequency conversion receiving channel, and the third power supply interface 31 of the microwave signal layer and the fourth power supply interface 32 of the microwave signal layer can be used to power the pulse transmission channel.

[0155] Figure 6In the embodiment, the bottom ground layer power interface group includes the bottom ground layer first power interface 66, the bottom ground layer second power interface 67, the bottom ground layer third power interface 68, and the bottom ground layer fourth power interface 69. Specifically, the bottom ground layer first power interface 66 corresponds to the microwave signal layer first power interface 29, the microwave signal layer second power interface 30 corresponds to the bottom ground layer second power interface 67, the bottom ground layer third power interface 68 corresponds to the microwave signal layer third power interface 31, and the bottom ground layer fourth power interface 69 corresponds to the microwave signal layer fourth power interface 32. In specific implementation, the two corresponding power interfaces are connected to achieve power connection, such as the bottom ground layer first power interface 66 and the microwave signal layer first power interface 29 are connected for power supply, wherein, during power supply connection, the bottom ground layer first power interface 66 is connected to the power circuit layer 49 through the first power supply connection via, and the power circuit layer 49 is electrically connected to the microwave signal layer first power interface 29 through the second power supply connection via. The power supply connection methods of other corresponding power interfaces can refer to the current description and will not be repeated here.

[0156] Furthermore, the microwave signal layer control interface group can realize the required control of the microwave communication module, such as the switch control of the switch circuit 12 mentioned above. Figure 3 In the microwave signal layer control interface group, the microwave signal layer first control interface 33, the microwave signal layer second control interface 34, the microwave signal layer third control interface 35, the microwave signal layer fourth control interface 36, the microwave signal layer fifth control interface 37, and the microwave signal layer sixth control interface 38;

[0157] Figure 6 In the figure, the bottom ground layer control interface group includes the bottom ground layer first control interface 70, the bottom ground layer second control interface 71, the bottom ground layer third control interface 72, the bottom ground layer fourth control interface 73, the bottom ground layer fifth control interface 74, and the bottom ground layer sixth control interface 75, wherein the bottom ground layer first control interface 70 corresponds to the first control interface 33 of the microwave signal layer, the bottom ground layer second control interface 71 corresponds to the second control interface 34 of the microwave signal layer, the bottom ground layer third control interface 72 corresponds to the third control interface 35 of the microwave signal layer, the bottom ground layer fourth control interface 73 corresponds to the fourth control interface 36 of the microwave signal layer, the microwave signal layer fifth control interface 37 corresponds to the fifth control interface 74 of the bottom ground layer, and the microwave signal layer sixth control interface 38 corresponds to the sixth control interface 75 of the bottom ground layer.

[0158] During specific implementation, the corresponding control interface needs to be connected. The control interface connection method can refer to the instructions for the above-mentioned power supply interface connection. The difference from the power supply interface connection is that when connecting the control interface, the connecting via should be connected to the signal circuit layer 48, that is, the control signal is processed through the signal circuit layer 48.

[0159] It can be seen from the above description that when the device carrier 1 adopts other forms, the control interface connection and the power supply interface connection method can be selected according to the form of the device carrier 1 so as to achieve the corresponding positive conductive connection while meeting the airtightness requirements. Examples will not be given one by one here.

Claims

1. A high-airtight SIP frequency conversion device suitable for microwave communication, characterized in that: The frequency conversion device comprises: A microwave communication device, packaged on a device carrier, comprising at least a frequency conversion receiving channel for frequency conversion processing of microwave signals during microwave communication and a pulse transmission channel for modulation processing during microwave communication; The sealed isolation cover is assembled on the device carrier and seals the microwave communication device on the device carrier. At least a frequency conversion receiving channel cavity and a pulse transmitting channel cavity are formed on the device carrier through the sealed isolation cover, wherein: The frequency conversion receiving channel is distributed in the frequency conversion receiving channel cavity, the pulse transmitting channel is distributed in the pulse transmitting channel cavity, and the frequency conversion receiving channel is electromagnetically isolated from the pulse transmitting channel by a sealed isolation cover; When the frequency conversion receiving channel includes at least two mixer devices, at least electromagnetic isolation between the mixer devices is configured in the cavity of the frequency conversion receiving channel; The device carrier includes a plurality of carrier functional layers and a ceramic dielectric layer for spacing two adjacent carrier functional layers, wherein: The functional layers of the device carrier are sequentially configured as a microwave signal layer, a ground plane layer, a signal circuit layer, a power circuit layer and a bottom ground layer. The microwave communication device is packaged on the microwave signal layer, and the sealing isolation cover is fixed on the microwave signal layer; A microwave signal layer radio frequency interface group adapted to the microwave communication device is arranged on the microwave signal layer, wherein the microwave signal layer radio frequency interface group includes a plurality of microwave signal layer radio frequency interfaces; A bottom ground layer radio frequency interface group is arranged on the bottom ground layer, and the bottom ground layer radio frequency interface group includes a plurality of bottom ground layer radio frequency interfaces, wherein: The microwave signal layer radio frequency interface corresponds to the bottom ground layer radio frequency interface one by one, and the microwave signal layer radio frequency interface is electrically connected to the corresponding bottom ground layer radio frequency interface through a stepped radio frequency via; For any stepped RF via, including a RF first sub-via, a via RF microstrip line, and a RF second sub-via, One end of the first RF sub-via is electrically connected to the RF interface of the microwave signal layer, the other end of the first RF sub-via is electrically connected to one end of the via RF microstrip line, the other end of the via RF microstrip line is connected to one end of the second RF sub-via, and the other end of the second RF sub-via is electrically connected to a corresponding RF interface of the bottom ground layer; The sealed isolation cover comprises a carrier wall arranged on the device carrier, a metal frame located inside the carrier wall, and a metal cover plate for closing the carrier wall, wherein: The metal enclosure is placed on the device carrier, and the metal enclosure is connected to the carrier wall through adaptation, so as to form a frequency conversion receiving channel cavity and a pulse transmitting channel cavity on the device carrier, and the frequency conversion receiving channel cavity and the pulse transmitting channel cavity are isolated from each other; When the frequency conversion receiving channel includes at least two mixer devices, the frequency conversion receiving channel cavity is configured by a metal frame to form at least two frequency conversion receiving channel sub-cavities. The mixer devices in the frequency converter communication module are respectively located in the corresponding frequency converter receiving channel sub-cavities, the frequency converter receiving channel sub-cavities are interconnected through metallized wire grooves that penetrate the metal frame, and the radio frequency microstrip lines connecting the mixer devices penetrate the metallized wire grooves; When the frequency conversion receiving channel includes two mixer devices, the frequency conversion receiving channel includes a primary mixer device and a secondary mixer device, wherein: The first-order mixing device is distributed in one frequency conversion receiving channel sub-cavity, and the second-order mixing device is distributed in another frequency conversion receiving channel sub-cavity; The first-stage mixer device and the second-stage mixer device are electrically connected to form a frequency conversion receiving channel after the electrical connection is adapted; When the microwave signal is frequency-converted, the microwave signal is mixed by a first-stage mixer and a second-stage mixer in sequence, and a corresponding frequency-converted microwave signal is generated after passing through the second-stage mixer; The first-stage frequency mixer device includes a limiting low-noise amplifier circuit, a switch circuit, a switch filter circuit, an amplitude modulation and phase modulation circuit, and a first-stage frequency mixer filter amplifier circuit connected in sequence. The two-stage mixer device includes a two-stage mixer amplifier circuit, a two-stage mixer post-low-pass filter circuit and an intermediate frequency amplifier circuit connected in sequence, wherein: The first-stage mixer filter amplifier circuit and the second-stage mixer amplifier circuit are adaptively connected through a radio frequency microstrip line passing through a metallized line slot, so as to configure an adaptive connection between the first-stage mixer device and the second-stage mixer device; When the microwave signal is subjected to frequency conversion processing, the microwave signal is sequentially subjected to a limiting low-noise amplifier circuit, a switch circuit, a switch filter circuit, an amplitude modulation and phase modulation circuit, and subjected to a first-stage mixer filter amplifier circuit for a first preset mixing process, so as to generate a first-stage mixed microwave signal after the first preset mixing process; The microwave signal after the first-stage mixing is transmitted to the second-stage mixing amplifier circuit via the radio frequency line, and the second-stage mixing amplifier circuit performs a second preset mixing process to generate a second-stage mixed microwave signal after the second preset mixing process; The microwave signal after the secondary frequency mixing is processed by the secondary frequency mixing low-pass filter circuit and the intermediate frequency amplifier circuit to generate a corresponding microwave signal after frequency conversion; The via-hole radio frequency microstrip line is located in the signal circuit layer; The first radio frequency sub-via vertically penetrates the microwave signal layer, the ground plane layer, and the ceramic dielectric layer between the microwave signal layer and the ground plane layer; The radio frequency second sub-via at least vertically penetrates the power circuit layer, the bottom ground layer, and the ceramic dielectric layer between the power circuit layer and the bottom ground layer; A via-ground hole unit is provided on the outer circles of the first RF sub-via and the second RF sub-via, wherein the via-ground hole unit includes a plurality of via-ground holes, and the via-ground holes surround the corresponding first RF sub-via and the second RF sub-via; The frequency conversion receiving channel and the pulse transmitting channel are bonded to the microwave signal layer by high temperature conductive adhesive; The corresponding grounding terminal in the frequency conversion receiving channel is connected to the bottom grounding layer through the corresponding frequency conversion receiving channel grounding hole. The corresponding grounding terminal in the pulse transmission channel is adaptively connected to the bottom grounding layer through the corresponding pulse transmission channel grounding hole; All the grounding holes of the frequency conversion receiving channel and the grounding holes of the pulse transmitting channel are staggered; The pulse transmission channel includes a transmission branch phase shift attenuation multifunctional circuit, a driving amplifier circuit and a final power amplifier circuit connected in sequence, wherein: When modulating the microwave signal, the microwave signal is processed in turn by the transmitting branch phase shift attenuation multifunctional circuit, the driving amplifier circuit and the final power amplifier circuit, and the modulated microwave signal is generated by the final power amplifier circuit; The pulse transmission channel also includes a power amplifier modulation circuit adapted to be connected to the final power amplifier circuit, wherein: The pulse emission channel cavity includes a pulse emission channel first sub-cavity and a pulse emission channel second sub-cavity. The first sub-cavity of the pulse emission channel and the second sub-cavity of the pulse emission channel are connected to each other; The transmitting branch phase shift attenuation multifunctional circuit and the driving amplifier circuit are located in the first sub-cavity of the pulse transmitting channel, and the power amplifier modulation circuit and the final power amplifier circuit are located in the second sub-cavity of the pulse transmitting channel.

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