A semiconductor chip product and a local sputtering jig and a local sputtering method thereof

Abstract

The embodiment of the application discloses a kind of semiconductor chip products and its local sputtering jig, local sputtering method. Including: carrier, for carrying and fixed semiconductor chip product, semiconductor chip product includes multiple semiconductor chips, semiconductor chip is provided with at least one protective object, protective object is located in protection area;The surface of pyrolysis protective layer is provided with accommodation groove, and the protective object is located in the accommodation groove;The pressing plate includes multiple convex structures, and the vertical projection of the multiple convex structures in the plane where the semiconductor chip product is located one-to-one corresponds to the protection area of the multiple semiconductor chips;The top of convex structure is provided with groove structure, and the groove structure is used to cover the protective object;The depth of groove structure is the same as the depth of accommodation groove, realizes the local sputtering of semiconductor chip product, after sputtering is completed, by high temperature pyrolysis, makes pyrolysis protective layer completely separate from semiconductor chip product under the condition of not being forced.

Description

[0001] This application is a divisional application of patent application number 202111272991.5 (the original application was filed on October 29, 2021, and the invention was entitled "A Semiconductor Chip Product and a Partial Sputtering Fixture and a Partial Sputtering Method Thereof"). Technical Field

[0002] This invention relates to the technical field of semiconductor chip sputtering, and more particularly to a semiconductor chip product and its local sputtering fixture and local sputtering method. Background Technology

[0003] Semiconductor chips, as an important component of electronic devices such as computers and mobile phones, are small silicon wafer structures containing integrated circuits. Semiconductor chips are mostly cubic in structure, and during manufacturing, thin metal films are sputtered onto the five surfaces of the semiconductor chip (excluding the bottom surface) to achieve electromagnetic signal shielding.

[0004] When performing local sputtering on semiconductor chips, sputtering cannot be performed on certain areas of the five surfaces other than the bottom surface because they are designed with quick connectors, small chips, heat sinks, etc. These devices need to be protected before sputtering.

[0005] Existing sputtering methods are usually overall sputtering, while local sputtering processes are prone to damaging the product and are also relatively complex.

[0006] Figure 1 This is a schematic diagram of a semiconductor chip product structure using monolithic sputtering in the prior art. (Example:) Figure 1 As shown, when sputtering this product, this sputtering method is only suitable for overall sputtering and cannot meet the needs of local sputtering.

[0007] Figure 2 This is a schematic diagram of a semiconductor chip product structure using localized sputtering in existing technology. (Example) Figure 2 As shown, when performing local sputtering on this product, glue is applied to the chip surface to achieve the effect of local sputtering. However, using glue for local sputtering has the following disadvantages: 1) Applying glue requires an expensive special glue dispensing machine, and issues such as dispensing accuracy and glue overflow are extremely difficult to control, leading to unsafe sputtering and product contamination; 2) Local sputtering using glue dispensing is only suitable for sputtering when the semiconductor chip products are all single products. When there are multiple products, if the connection between each single product or between a single product and the frame is not firm, deformation or breakage can easily occur between each single product or between a single product and the frame if subjected to slight external force.

[0008] Figure 3This is a schematic diagram of another semiconductor chip product structure using local sputtering in the prior art. (Example) Figure 3 As shown, when performing local sputtering on this product, a physical mask method is used to achieve the effect of local sputtering. However, the following disadvantages exist when using a physical mask method for local sputtering: 1) Before sputtering, each tray of the mask needs to be manually installed onto the carrier and fixed with screws. After sputtering is completed, the fixing screws are removed and the mask is taken off, which is a cumbersome manual operation. Moreover, the mask is prone to deformation and damage after a period of use; 2) Local sputtering using a physical mask method is only suitable for sputtering when the semiconductor chip products are all single products. When there are multiple products, if the connection between each single product or between a single product and the frame is not firm, the single product or between a single product and the frame is prone to deformation or breakage under slight external force. Summary of the Invention

[0009] This invention provides a semiconductor chip product and its local sputtering fixture and local sputtering method, ensuring that the pyrolysis protective layer can be completely detached from the semiconductor chip product without force, thus avoiding incomplete sputtering and adhesive residue on the semiconductor chip product.

[0010] In a first aspect, embodiments of the present invention provide a local sputtering fixture for semiconductor chip products, comprising:

[0011] A carrier for carrying and fixing a semiconductor chip product, the semiconductor chip product comprising multiple semiconductor chips, the semiconductor chips being provided with at least one protective object;

[0012] A pyrolysis protective layer is used to be attached to the side of the semiconductor chip product facing away from the carrier, and at least covers the protective object on the semiconductor chip product, and undergoes pyrolysis within a preset temperature range;

[0013] A pressure plate is used to press and bond the pyrolysis protective layer to the semiconductor chip product.

[0014] The pressure plate includes multiple protruding structures, and the vertical projections of the multiple protruding structures on the plane where the semiconductor chip product is located correspond one-to-one with the protected areas of the multiple semiconductor chips.

[0015] The pyrolysis protective layer has a receiving groove on the side surface facing the semiconductor chip product;

[0016] The top of the protruding structure is provided with a groove structure, which is used to cover the protected object; the depth of the groove structure is the same as the depth of the receiving groove.

[0017] Optionally, the local sputtering fixture further includes a pyrolytic double-sided adhesive layer, which is used to adhere to the first surface of the carrier and to bond and fix the semiconductor chip product on the carrier, and undergoes pyrolysis within a preset temperature range.

[0018] Optionally, both the pyrolytic protective layer and the pyrolytic double-sided adhesive layer include an adhesive layer, a buffer layer and a pyrolytic adhesive layer stacked sequentially.

[0019] In the pyrolysis protective layer, the buffer layer and the adhesive layer are sequentially stacked on the side of the pyrolysis adhesive layer away from the semiconductor chip product;

[0020] In the pyrolytic double-sided adhesive layer, the buffer layer and the pyrolytic adhesive layer are sequentially stacked on the side of the adhesive layer away from the carrier.

[0021] Optionally, the pyrolysis protective layer is attached to the side of the semiconductor chip product facing away from the carrier, and the protected object on the semiconductor chip product is accommodated in the accommodating groove.

[0022] Optionally, the distance between the sidewall of the receiving groove and the sidewall of the protected object is a first preset distance, which is greater than or equal to 0.1 mm.

[0023] Optionally, the distance between the bottom of the receiving groove and the top of the protected object is a second preset distance, which is greater than or equal to 0.4 mm.

[0024] Optionally, the pyrolytic protective layer includes an adhesive layer, a buffer layer, and a pyrolytic adhesive layer stacked sequentially; in the pyrolytic protective layer, the buffer layer and the adhesive layer are stacked sequentially on the side of the pyrolytic adhesive layer facing away from the semiconductor chip product.

[0025] The difference between the thickness of the buffer layer and the height of the protected object is greater than or equal to 0.4 mm.

[0026] Optionally, the adhesive layer is a polyimide adhesive layer, and the buffer layer is a foam adhesive layer.

[0027] Optionally, the semiconductor chip is further provided with at least one sputtering object, the height of the sputtering object being H1 in the direction perpendicular to the plane of the semiconductor chip, and the height of the protrusion structure being H2 in the direction perpendicular to the plane of the pressure plate, where H2 > H1.

[0028] Optionally, ΔH = H2 - H1, ΔH ≥ 0.2 mm.

[0029] Optionally, the preset temperature range is 150℃-180℃.

[0030] In a second aspect, embodiments of the present invention also provide a semiconductor chip product, wherein sputtering is performed using a local sputtering fixture for the semiconductor chip product described in the first aspect above, the semiconductor chip product comprising:

[0031] Printed circuit boards;

[0032] Multiple semiconductor chips are located on the printed circuit board; each semiconductor chip includes a sputtering area and a protection area, and at least one protected object is disposed on the semiconductor chip, the protected object being located in the protection area;

[0033] The frame is fixedly connected to the edge of the printed circuit board and is perpendicular to the plane of the printed circuit board;

[0034] Multiple first connecting rods are fixedly connected at both ends to the frame and the semiconductor chip, respectively;

[0035] The local sputtering fixture includes at least a pressure plate, which includes multiple protrusions and a groove on the top of the protrusions. The protrusions correspond to the protection zone of the semiconductor chip, and the groove corresponds to the protected object.

[0036] Optionally, it may also include a plurality of second connecting rods; the two ends of the second connecting rods are fixedly connected to two adjacent semiconductor chips.

[0037] Optionally, the radial dimension of the first connecting rod is less than or equal to one-tenth of the circumference of the semiconductor chip.

[0038] Optionally, the semiconductor chip is further provided with at least one sputtering object; in the direction perpendicular to the plane where the semiconductor chip is located, the height difference between the sputtering object and the protective object is greater than or equal to 0.5 mm.

[0039] Thirdly, embodiments of the present invention also provide a method for local sputtering of a semiconductor chip product, wherein sputtering is performed using a local sputtering fixture for the semiconductor chip product as described in the first aspect above, including:

[0040] A semiconductor chip product is fixed on a first surface of a carrier. The semiconductor chip product includes multiple semiconductor chips, and each semiconductor chip is provided with at least one protected object.

[0041] A pyrolytic protective layer is attached to the side of the semiconductor chip product facing away from the first surface of the carrier, and the pyrolytic protective layer covers at least the protected object on the semiconductor chip product.

[0042] The pyrolysis protective layer is pressed together using a pressure plate to bond it to the semiconductor chip product.

[0043] The semiconductor chip product with the pyrolysis protective layer attached is sputtered;

[0044] The semiconductor chip product is heated within a preset temperature range, causing the pyrolysis protective layer to pyrolyze and detach from the semiconductor chip product.

[0045] Optionally, before fixing the semiconductor chip product to the first surface of the carrier, the method further includes: attaching a pyrolytic double-sided adhesive layer to the first surface of the carrier, wherein the pyrolytic double-sided adhesive layer bonds and fixes the semiconductor chip product to the carrier and undergoes pyrolysis within a preset temperature range.

[0046] Optionally, the preset temperature range is 150℃-180℃.

[0047] This embodiment provides a local sputtering fixture for semiconductor chip products. By attaching a pyrolytic protective layer to the side of the semiconductor chip product facing away from the carrier, the pyrolytic protective layer covers the protected area of ​​the semiconductor chip product, achieving local sputtering of the semiconductor chip product. Then, the pyrolytic protective layer is tightly bonded to the semiconductor chip product by pressing with a pressure plate. The entire strip of semiconductor chip product with the pyrolytic protective layer attached is placed in a sputtering chamber under vacuum environment for sputtering. After sputtering is completed, the pyrolytic protective layer is completely detached from the semiconductor chip product without stress by high-temperature pyrolysis, ensuring that the entire strip of semiconductor chip product does not deform, and preventing incomplete sputtering and glue residue. Attached Figure Description

[0048] Other features, objects, and advantages of the invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0049] Figure 1 A schematic diagram of the structure of a semiconductor chip product with integral sputtering in the prior art;

[0050] Figure 2 A schematic diagram of the structure of a semiconductor chip product using local sputtering in the prior art;

[0051] Figure 3 This is a schematic diagram of another semiconductor chip product structure using local sputtering in the prior art;

[0052] Figure 4 This is a schematic diagram of the overall structure of a partial sputtering fixture for a semiconductor chip product provided in an embodiment of the present invention;

[0053] Figure 5 This is a partial structural diagram of a semiconductor chip provided in an embodiment of the present invention;

[0054] Figure 6This is a schematic diagram of a pyrolytic double-sided adhesive layer attached to a carrier, provided by an embodiment of the present invention.

[0055] Figure 7 This is a schematic diagram of a pyrolysis protective layer attached to a semiconductor chip product according to an embodiment of the present invention;

[0056] Figure 8 A schematic diagram of the structure of a partial sputtering fixture for a semiconductor chip product provided in an embodiment of the present invention;

[0057] Figure 9 for Figure 8 A magnified view of a portion of the dashed box Aa;

[0058] Figure 10 This is a schematic diagram of the structure of a semiconductor chip product provided in an embodiment of the present invention;

[0059] Figure 11 This is a top view of a semiconductor chip product provided in an embodiment of the present invention;

[0060] Figure 12 This invention provides a method for local sputtering of semiconductor chip products.

[0061] In the diagram: 10-Carrier; 20-Semiconductor chip product; 21-Semiconductor chip; 211-Protected object; 212-Protected area; 213-Sputtering area; 214-Sputtering object; 22-Printed circuit board; 23-Frame; 24-First connecting rod; 25-Second connecting rod; 30-Pyrolytic protective layer; 31-Adhesive layer; 32-Buffer layer; 33-Pyrolytic adhesive layer; 34-Accommodation groove; 40-Pressure plate; 41-Protruding structure; 411-Groove structure; 50-Pyrolytic double-sided adhesive layer. Detailed Implementation

[0062] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0063] Before discussing the exemplary embodiments in more detail, it should be noted that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although the flowcharts describe the operations (or steps) as sequential processes, many of these operations can be performed in parallel, concurrently, or simultaneously. Furthermore, the order of the operations can be rearranged. The process can be terminated when its operation is completed, but may also have additional steps not included in the figures. The process can correspond to a method, function, procedure, subroutine, subroutine, etc. Moreover, without conflict, the embodiments and features in the embodiments of the present invention can be combined with each other.

[0064] The term "comprising" and its variations as used in this invention are open-ended, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment".

[0065] It should be noted that the concepts of "first" and "second" mentioned in this invention are only used to distinguish the corresponding contents and are not used to limit the order or interdependence.

[0066] It should be noted that the terms "a" and "a plurality of" used in this invention are illustrative rather than restrictive. Those skilled in the art should understand that, unless otherwise expressly indicated in the context, they should be understood as "one or more".

[0067] Figure 4 This is a schematic diagram of the overall structure of a partial sputtering fixture for a semiconductor chip product provided in an embodiment of the present invention. Figure 4As shown, the local sputtering fixture includes: a carrier 10 for supporting and fixing a semiconductor chip product 20, the semiconductor chip product 20 including multiple semiconductor chips 21, each semiconductor chip 21 having at least one protective object 211, the semiconductor chip 21 including a protection zone 212 and a sputtering zone 213, the protective object 211 being located in the protection zone 212; a pyrolysis protective layer 30 for attaching to the side of the semiconductor chip product 20 away from the carrier 10, and at least covering the protective object 211 on the semiconductor chip product 20, and undergoing pyrolysis within a preset temperature range; and a pressure plate 40 for pressing and bonding the pyrolysis protective layer 30 to the semiconductor chip product 20. The pressure plate 40 includes multiple protrusions 41, and the vertical projections of the multiple protrusions 41 on the plane where the semiconductor chip 21 is located correspond one-to-one with the protection zones 212 of the multiple semiconductor chips 21. The pyrolysis protection layer 30 has a receiving groove 34 on the side of the semiconductor chip product 20 facing the semiconductor chip product 20. The pyrolysis protection layer 30 is attached to the side of the semiconductor chip product 20 away from the carrier 10, and the protected object 211 on the semiconductor chip product 20 is received in the receiving groove 34. The top of the protrusion 41 has a groove structure 411, which is used to cover the protected object 211. The depth of the groove structure 411 is the same as the depth of the receiving groove 34.

[0068] The carrier 10 can be made of a polymer, such as polyethylene, polypropylene, polyolefin, polyester, and ethylene-vinyl acetate copolymer, or a combination of such polymers. The carrier 10 provides better protection and support for the semiconductor chip product 20.

[0069] The pyrolytic protective layer 30 is a heat-removable adhesive, meaning it can be debonded by heat. In this embodiment, the pyrolytic protective layer 30 can be made of UV adhesive. After processing, it can be removed by high-temperature baking and debonded at a preset temperature range. After curing, the adhesive emits no pollutants and leaves no residue after debonding, thus preventing color pollution on the product surface. When using the pyrolytic protective layer 30 to attach the semiconductor chip product 20, it has strong adhesion, can be quickly debonded by heating, and leaves no residue or adhesive marks.

[0070] The local sputtering fixture provided in this embodiment sputters a semiconductor chip product 20 in a vacuum environment. The semiconductor chip product 20 includes multiple semiconductor chips 21 connected to form a strip. The semiconductor chip product 20 typically includes quick-connect connectors, small chips, and other components. These components need to be protected during the sputtering process, as described above. Figure 4The semiconductor chip product 20 is placed on the first surface of the carrier 10, and the pyrolysis protective layer 30 covers the protected object 211 of the semiconductor chip product 20. That is, the protected object 211 is usually a quick connector, a small chip, or other component, so as to ensure that these components on the semiconductor chip product 20 are not sputtered during the sputtering process.

[0071] Specifically, a strip of semiconductor chip product 20 is placed in a carrier 10, and a pyrolytic protective layer 30 is attached to the side of the semiconductor chip product 20 facing away from the carrier 10. The pyrolytic protective layer 30 covers the protected object 211 of the semiconductor chip product 20. The pyrolytic protective layer 30 is tightly bonded to the semiconductor chip product 20 by a pressure plate 40. The strip of semiconductor chip product 20 with the pyrolytic protective layer 30 attached is placed in a sputtering chamber in a vacuum environment for sputtering. After sputtering is completed, the pyrolytic protective layer 30 is completely detached from the semiconductor chip product 20 without force through pyrolysis, which will not cause incomplete sputtering or glue residue. It should be noted that in this embodiment, a commonly used oven is used for pyrolysis, and two pyrolytic protective layers can be pyrolyzed at the same time in one baking.

[0072] Figure 5 This is a partial structural diagram of a semiconductor chip provided in an embodiment of the present invention. Figure 5 As shown, the semiconductor chip 21 includes a protection zone 212 and a sputtering zone 213. The protected object 211 is located in the protection zone 212. The pressure plate 40 includes multiple protrusions 41. During the process of pressing the semiconductor chip product 20 with the pressure plate 40, the vertical projections of the multiple protrusions 41 on the plane where the semiconductor chip product 20 is located correspond one-to-one with the protection zones 212 of the multiple semiconductor chips 21.

[0073] The shape of the pressure plate 40 needs to match the shape of the pyrolysis protective layer 30 and the protected object 211 in order to achieve the purpose of ordinary pressure holding.

[0074] In addition, when the vertical projection of the protrusion 41 on the platen 40 onto the plane where the semiconductor chip product 20 is located corresponds one-to-one with multiple protection zones 212, it can be ensured that the platen 40 presses down normally onto the pyrolysis protection layer 30 of the protected object 211 covered in the protection zone 212.

[0075] It should be noted that during the pressing process, in order to avoid damaging the protected object 211 during the pressing process, the pressing height of the pressure plate 40 needs to maintain a certain distance from the protected object 211 in the protection zone 212. This part is illustrated in some other embodiments.

[0076] Optionally, continue to refer to Figure 5The top of the protruding structure 41 is provided with a groove structure 411. During the process of pressing the semiconductor chip product 20 by the pressure plate 40, the vertical projection of the groove structure 411 on the plane where the semiconductor chip product 20 is located covers and protects the object 211.

[0077] Reference Figure 5 The raised structure 41 has a groove structure 411 on the side facing the protected object 211 in the protection zone 212. This type of groove structure 411 fits into the receiving groove 34 in the above embodiment. The groove depth of this type of groove structure 411 can be consistent with the depth of the receiving groove 34 to ensure that the protected object 211 will not be pressed during the pressing process.

[0078] This embodiment provides a partial sputtering fixture for semiconductor chip products, comprising: a carrier for supporting and fixing the semiconductor chip product, the semiconductor chip product including multiple semiconductor chips, each semiconductor chip having at least one protected object; a pyrolysis protective layer for attaching to the side of the semiconductor chip product away from the carrier and at least covering the protected object on the semiconductor chip product, and for undergoing pyrolysis within a preset temperature range; and a pressure plate for pressing and bonding the pyrolysis protective layer to the semiconductor chip product; the pressure plate includes multiple protrusions, the vertical projections of which correspond one-to-one with the protected areas of the multiple semiconductor chips on the plane of the semiconductor chip product; a receiving groove is provided on the side surface of the pyrolysis protective layer facing the semiconductor chip product, the pyrolysis protective layer is attached to the side of the semiconductor chip product away from the carrier, and the protected object on the semiconductor chip product is received in the receiving groove; a groove structure is provided on the top of the protrusions, the groove structure being used to cover the protected object; the depth of the groove structure is the same as the depth of the receiving groove. By attaching a pyrolytic protective layer to the side of the semiconductor chip product facing away from the carrier, covering the protected area of ​​the semiconductor chip product, local sputtering of the semiconductor chip product is achieved. Then, the pyrolytic protective layer is tightly bonded to the semiconductor chip product by pressing with a pressure plate. The groove depth of the groove structure can be consistent with the depth of the receiving groove to ensure that the protected object is not pressed during the pressing process. The entire strip of semiconductor chip product with the pyrolytic protective layer attached is placed in a sputtering chamber in a vacuum environment for sputtering. After sputtering is completed, the pyrolytic protective layer is completely detached from the semiconductor chip product without force by high-temperature pyrolysis, ensuring that the entire strip of semiconductor chip product does not deform, and preventing incomplete sputtering and glue residue.

[0079] Optionally, continue to refer to Figure 4 The local sputtering fixture provided in this embodiment also includes a pyrolytic double-sided adhesive layer 50. The pyrolytic double-sided adhesive layer 50 is used to attach to the first surface of the carrier 10 and to bond and fix the semiconductor chip product 20 to the carrier 10, and undergoes pyrolysis within a preset temperature range.

[0080] Based on the above embodiment, the bottom of the pyrolytic double-sided adhesive layer 50 is bonded to the first surface of the carrier 10, and the top is bonded to the semiconductor chip product 20, so that the entire strip of semiconductor chip product 20 is bonded and fixed on the carrier 10. Since the pyrolytic double-sided adhesive layer 50 is bonded to the side of the semiconductor chip product 20 closest to the carrier 10, the pyrolytic double-sided adhesive layer 50 fits the bottom of the semiconductor chip product 20, and the pyrolytic double-sided adhesive layer 50 is also in the form of an entire strip.

[0081] Similar to the principle of detachment of the pyrolytic protective layer 30 during pyrolysis, the semiconductor chip product 20 is bonded to the first surface of the carrier 10 by the pyrolytic double-sided adhesive layer 50. The local sputtering fixture with the pyrolytic double-sided adhesive layer 50 attached is placed into the sputtering chamber in a vacuum environment for sputtering, so that the back side of the semiconductor chip product 20 is not sputtered during the sputtering process. After the sputtering is completed, the pyrolytic double-sided adhesive layer 50 loses its adhesiveness at the pyrolysis temperature within the preset temperature range through pyrolysis, so that the entire strip of semiconductor chip product 20 detaches from the pyrolytic double-sided adhesive layer 50 without any force.

[0082] It should be noted that the pyrolytic double-sided adhesive layer 50 is similar to the pyrolytic protective layer 30. When performing local sputtering on the semiconductor chip product 20, UV adhesive can also be used. The adhesion and thickness of the pyrolytic double-sided adhesive layer 50 are not limited in this embodiment. It is only necessary to ensure that the back side of the semiconductor chip product 20 is not sputtered during the sputtering process.

[0083] Figure 6 This is a schematic diagram of a pyrolytic double-sided adhesive layer attached to a carrier, as provided in an embodiment of the present invention. Figure 7 This is a schematic diagram illustrating a pyrolysis protective layer attached to a semiconductor chip product, as provided in an embodiment of the present invention. Figure 6 and 7 As shown, both the pyrolytic protective layer 30 and the pyrolytic double-sided adhesive layer 50 include an adhesive layer 31, a buffer layer 32, and a pyrolytic adhesive layer 33 stacked sequentially. (Refer to...) Figure 7 In the pyrolysis protective layer 30, the buffer layer 32 and the adhesive layer 31 are sequentially stacked on the side of the pyrolysis adhesive layer 33 facing away from the semiconductor chip product 20. (Refer to...) Figure 5 In the pyrolytic double-sided adhesive layer, the buffer layer 32 and the pyrolytic adhesive layer 33 are sequentially stacked on the side of the adhesive layer 31 away from the carrier 10.

[0084] Among them, Figure 6In the process, the semiconductor chip product 20 in the local sputtering fixture is bonded to the carrier 10 by a pyrolytic double-sided adhesive layer 50. The adhesive layer 31 in the pyrolytic double-sided adhesive layer 50 is attached to the first surface of the carrier 10. The adhesive layer 31 is used to connect the pyrolytic double-sided adhesive layer 50 and the carrier 10, further fixing the carrier 10. The buffer layer 32 and the pyrolytic adhesive layer 33 are attached to the adhesive layer 31 in sequence. The buffer layer 32 is used to connect the adhesive layer 31 and the pyrolytic adhesive layer 33, and to buffer the pressure during the pressing process. The pyrolytic double-sided adhesive layer 50 is attached to the back of the semiconductor chip product 20, further protecting the semiconductor chip product 20 from being sputtered during the sputtering process.

[0085] like Figure 7 As shown, the pyrolysis protective layer 30 is attached to the side of the semiconductor chip product 20 facing away from the carrier and covers the protected object of the semiconductor chip product 20 (not shown in the figure). Therefore, the overall design of the pyrolysis protective layer 30 is formulated according to the shape of the component that needs to be protected by the semiconductor chip product 20 without affecting the sputtering. In this embodiment, since the adhesive layer 31 is placed on the outermost side facing away from the semiconductor chip product 20, when designing the pyrolysis protective layer 30, it is only necessary to design the shape of the buffer layer 32 and the pyrolysis adhesive layer 33 according to the shape of the component that needs to be protected in the non-sputtering area. This description will be further explained in some other embodiments.

[0086] Figure 8 This is a schematic diagram of the structure of a partial sputtering fixture for a semiconductor chip product provided in an embodiment of the present invention. Figure 8 As shown, a receiving groove 34 is provided on the side surface of the pyrolysis protective layer 30 facing the semiconductor chip product 20. When the pyrolysis protective layer 30 is attached to the side of the semiconductor chip product 20 away from the carrier 10, the protected object 211 on the semiconductor chip product 20 is received in the receiving groove 34.

[0087] In this pyrolytic protective layer 30, the pyrolytic adhesive layer 33 is attached to the side of the semiconductor chip product 20 facing away from the carrier 10, and the adhesive layer (not shown in the figure) and the buffer layer 32 are sequentially stacked on the side of the pyrolytic adhesive layer 33 facing away from the semiconductor chip product 20. Similarly, the pyrolytic adhesive layer 33 is used to protect the protected object on the side of the semiconductor chip product 20 facing away from the carrier 10 from being sputtered during the sputtering process. After sputtering is completed, the pyrolytic protective layer 30 is completely detached from the semiconductor chip product 20 without any force through pyrolysis. The adhesive layer 31 in the pyrolytic protective layer 30 is equivalent to a protective film layer, and the buffer layer 32 is used to connect the pyrolytic adhesive layer 33 and the protective film layer, and to buffer the pressure during the pressing process of the pressure plate, thereby preventing the components in the semiconductor chip product 20 from being damaged by pressure.

[0088] Since semiconductor chip products 20 typically include components such as quick connectors and small chips, these components are protected during the sputtering process and are considered protected objects. Furthermore, these components are located on the printed circuit board of the semiconductor chip product 20, but are not on the same horizontal plane as the printed circuit board. Therefore, when the pyrolytic protective layer 30 is attached to the front side of the semiconductor chip product 20, a corresponding receiving groove 34 needs to be designed according to the shape of the components in the protected area. The protected object 211 is placed in this receiving groove 34, and then a pyrolytic adhesive layer 33 is attached to the front side of the protected object 211. This protects the protected object 211 on the side of the semiconductor chip product 20 facing away from the carrier 10 from sputtering.

[0089] It should be noted that since the adhesive layer 31 in the pyrolytic protective layer 30 is disposed on the side of the buffer layer 32 and the pyrolytic adhesive layer 33 facing away from the semiconductor chip product 20, it is equivalent to a protective film layer. Therefore, when providing the receiving groove 34 on the surface facing the semiconductor chip product 20, it is only necessary to provide it at the buffer layer 32 and the pyrolytic adhesive layer 33. In addition, when providing the receiving groove 34 on the buffer layer 32 and the pyrolytic adhesive layer 33, the shape and size of the receiving groove 34 on the two adhesive layers match the shape and size of the object to be protected 211.

[0090] Figure 9 for Figure 8 A magnified view of a portion of the dashed box Aa. (See diagram below.) Figure 9 As shown, the distance between the side wall of the receiving groove 34 and the side wall of the protected object 211 is a first preset distance L1, which is greater than or equal to 0.1mm.

[0091] Based on the above embodiments, the receiving groove 34 is used to receive the protected object 211. To ensure that the protected object 211 is protected, it needs to be completely placed into the receiving groove 34. Furthermore, the buffer layer 32 and the thermal adhesive layer 33, which provide the receiving groove 34, need to have sufficient width to adhere to the semiconductor chip product 20 to ensure that the protected object 211 on the product is not sputtered. Therefore, in this embodiment, referring to... Figure 9 The distance L1 between the side wall of the receiving groove 34 and the side wall of the protected object 211 is set to be greater than or equal to 0.1 mm, so as to meet the requirements of protecting the protected object 211 during the sputtering process.

[0092] Optionally, continue to refer to Figure 9 The distance between the bottom of the receiving groove 34 and the top of the protected object 211 is a second preset distance L2, which is greater than or equal to 0.4mm.

[0093] Similarly, in order to ensure that the protected object 211 is protected, the receiving groove 34 needs to have enough space to accommodate the protected object 211, and further ensure that the protected object 211 will not be sputtered when the pyrolysis protective layer 30 covers the protected object 211.

[0094] It should be noted that in this embodiment, the second preset distance L2 is a reasonable preset to ensure that the receiving groove 34 can fully accommodate the shape and size of the current protected object 211. When the second preset distance L2 is less than 0.4mm, the top of the protected object 211 will be damaged by the pyrolytic adhesive layer 33. Therefore, during the sputtering process, the pyrolytic adhesive layer 33 causes part of the protected object 211 on the side of the semiconductor chip product 20 away from the carrier 10 to be sputtered.

[0095] In some other embodiments, if the protected object 211 has a different shape and size, the receiving groove 34 will also change accordingly, as long as it can completely accommodate the protected object 211.

[0096] Optionally, continue to refer to Figure 9 The pyrolytic protective layer includes an adhesive layer (not shown in the figure), a buffer layer 32, and a pyrolytic adhesive layer 33 stacked in sequence. In the pyrolytic protective layer 30, the buffer layer 32 and the adhesive layer 31 are stacked in sequence on the side of the pyrolytic adhesive layer 33 away from the semiconductor chip product 20. The difference between the thickness L3 of the buffer layer 32 and the height L4 of the protected object 211 is greater than or equal to 0.4 mm.

[0097] The buffer layer 32 is disposed on the side of the pyrolytic adhesive layer 33 away from the semiconductor chip product 20. It is used to connect the pyrolytic adhesive layer 33 and the protective film layer (adhesive layer not shown in the figure) and to buffer the pressure during the pressing process of the pressure plate to prevent the protected object 211 in the semiconductor chip product 20 from being damaged by pressure. Therefore, when there is a certain space between the buffer layer 32 and the protected object 211, the pressure plate has the ability to buffer the pressure during the pressing process. In this embodiment, in order to avoid the adhesive layer being too thin and resulting in low adhesion, the difference between the thickness L3 of the buffer layer 32 and the height L4 of the protected object 211 is preferably greater than or equal to 0.4 mm. In other embodiments, the difference can be made according to the shape and size of the protected object 211.

[0098] Optionally, the adhesive layer 31 is a polyimide adhesive layer, and the buffer layer 32 is a foam adhesive layer.

[0099] It should be noted that the adhesive layer 31 in both the pyrolytic protective layer 30 and the pyrolytic double-sided adhesive layer 50 is a polyimide adhesive layer, and the buffer layer 32 is a foam adhesive layer.

[0100] Optionally, continue to refer to Figure 5The semiconductor chip 21 is also provided with at least one sputtering object 214. In the direction perpendicular to the plane where the semiconductor chip 21 is located, the height value of the sputtering object 214 is H1, and in the direction perpendicular to the plane where the pressure plate is located, the height value of the protrusion structure 41 is H2, where H2 > H1.

[0101] Reference Figure 5 In the semiconductor chip product 20, the sputtered object 214 and the protected object 211 are stepped in the horizontal direction, thus creating a height difference between them. The components in the sputtered object 214 of the semiconductor chip 21 are embedded in epoxy resin. This type of epoxy resin is a stable thermosetting chemical material. After adding a curing agent, the epoxy groups open to form hydrocarbon groups and cross-link, thereby forming a network structure from linear polymer cross-linking and curing a thermosetting plastic layer. This protects the components in the sputtered object 214 of the semiconductor chip 21 from external environmental influences and provides electrical insulation between the external environment and the semiconductor chip 21.

[0102] Based on the above embodiments, the semiconductor chip product 20 is attached to the carrier 10 in its entirety by a pyrolytic double-sided adhesive layer 50 to sputter the sputtering object 214. The pyrolytic protective layer 30 covers the protected object 211 area of ​​the semiconductor chip product 20. The pyrolytic protective layer 30 is tightly bonded to the semiconductor chip product 20 by a pressure plate 40 to ensure that there are no gaps in the middle. When H2>H1, it is further ensured that the protected object 211 is sufficiently protected during sputtering and that the epoxy resin in the sputtering object 214 is not damaged.

[0103] Optionally, ΔH = H2 - H1, ΔH ≥ 0.2 mm.

[0104] As described above, the protrusion structure 41 of the pressure plate 40 is located in the protection zone 212 of multiple semiconductor chips 21 in a vertical projection on the plane where the semiconductor chip product 20 is located. In order to achieve the purpose of maintaining pressure and avoiding sputtering object 214, in this embodiment, the height difference between sputtering object 214 and protrusion structure 41 is set to 0.2mm. In some other embodiments, the height difference can also be set to other values ​​according to the size and shape of semiconductor chip 21 and the shape and size of pressure plate 40, which is not limited here.

[0105] Optionally, the preset temperature range is 150℃-180℃.

[0106] The pyrolysis of the double-sided adhesive layer 50 and the pyrolysis of the protective layer 30 are required to be carried out in a vacuum environment within the sputtering chamber. They must maintain normal performance at a temperature of 150°C without any gas leakage. When the preset temperature range is between 150-180°C, it can ensure that the semiconductor chip product 20 is completely detached from the pyrolysis of the double-sided adhesive layer 50 and the pyrolysis of the protective layer 30 is also completely detached from the semiconductor chip product 20. When the temperature is below 150°C, the pyrolysis conditions are not met, so no pyrolysis can occur. When the temperature exceeds 180°C, pyrolysis is usually completed within 30 minutes. After pyrolysis, the adhesive layer and the product are basically completely detached, and there are no foreign matter residues on the surface of the semiconductor chip product 20.

[0107] Figure 10 This is a schematic diagram of the structure of a semiconductor chip product provided in an embodiment of the present invention. Figure 10 As shown, the semiconductor chip includes: a printed circuit board 22, a plurality of semiconductor chips 21 located on the printed circuit board 22, the semiconductor chip including a sputtering area 213 and a protection area 212, and at least one protection object 211 disposed on the semiconductor chip 21, the protection object 211 being located in the protection area 212.

[0108] Figure 11 This is a top view schematic diagram of a semiconductor chip product provided in an embodiment of the present invention. Figure 11 As shown, the semiconductor chip 21 also includes a frame 23, which is fixedly connected to the edge of the printed circuit board and perpendicular to the plane of the printed circuit board (not shown in the figure), and a plurality of first connecting rods 24, which are fixedly connected to the frame 23 and the semiconductor chip 21 at both ends respectively.

[0109] The local sputtering fixture includes at least a pressure plate 40. The pressure plate 40 includes a plurality of protrusions 41 and a groove structure 411 disposed on the top of the protrusions 41. The protrusions 41 correspond to the protection zone 212 of the semiconductor chip 21, and the groove structure 411 corresponds to the protected object 211.

[0110] Multiple semiconductor chips 21 are connected on a printed circuit board 22 to form a strip-shaped semiconductor chip product 20, wherein the components in each semiconductor chip 21 are protected during sputtering. A pressure plate 40 includes multiple protrusions 41. During the pressing process of the pressure plate 40 onto the semiconductor chip product 20, the vertical projections of the multiple protrusions 41 onto the plane of the semiconductor chip product 20 correspond one-to-one within the protection zones 212 of the multiple semiconductor chips 21. The shape of the pressure plate 40 needs to conform to the shape of the pyrolysis protective layer 30 and the protected object 211 to achieve the purpose of ordinary pressure holding. A groove structure 411 is provided on the side of the protrusion 41 facing the protected object 211 in the protection zone 212. This groove structure 411 conforms to the receiving groove 34 in the above embodiment, and the groove depth of this groove structure 411 can be consistent with the depth of the receiving groove 34 in the above embodiment to ensure that the protected object 211 is not pressed during the pressing process.

[0111] In existing semiconductor chip products, the connection between individual semiconductor chips and the frame is not strong during sputtering. Under slight external force, the individual semiconductor chip and the frame are prone to deformation or breakage, causing subsequent processes to fail. Therefore, to solve the above problem, the semiconductor chip product provided in this embodiment is in the form of a strip. In the strip product, the individual semiconductor chip 21 is connected to the frame 23 by multiple first connecting rods 24, thereby solving the problem of weak connection in the prior art.

[0112] It is understood that the multiple first connecting rods 24 in this embodiment can be long shaft workpieces with rigidity. The first connecting rods 24 are connected between the frame 23 and the semiconductor chip 21 by welding to reinforce them, improve the stability of the connection of the semiconductor chip 21, and effectively avoid the problem of tearing and breaking during the process of the semiconductor chip product 20 detaching from the pyrolytic double-sided adhesive layer 50 after sputtering, thereby further improving work efficiency.

[0113] Optionally, continue to refer to Figure 11 The semiconductor chip product 20 also includes a plurality of second connecting rods 25, the two ends of which are fixedly connected to two adjacent semiconductor chips 21.

[0114] Similarly, a second connecting rod 25 is added to every two semiconductor chips 21 in the semiconductor chip product 20 to prevent the position or shape of a single semiconductor chip 21 from changing due to external force when the semiconductor chip product 20 is subjected to slight external force, thereby further improving the accuracy of the sputtering process.

[0115] It should be noted that, in order to simplify the process, the second connecting rods 25 used to connect and fix each semiconductor chip 21 in the semiconductor chip product are made of the same material and have the same size and connection length.

[0116] Optionally, the radial dimension of the first connecting rod 24 is less than or equal to one-tenth of the circumference of the semiconductor chip 21.

[0117] Reference Figure 11 The first connecting rod 24 is fixedly connected to the frame 23 and the semiconductor chip 21 at both ends. When the radial dimension L5 of the first connecting rod 24 is greater than one-tenth of the circumference of the semiconductor chip 21, the connection between the semiconductor chip 21 and the frame 23 on the printed circuit board is improved, and the problem of tearing and breakage during the process of the semiconductor chip product 20 detaching from the pyrolytic double-sided adhesive layer 50 after sputtering is completed is further avoided.

[0118] It should be noted that, in this embodiment, the radial dimension of the first connecting rod 24 is greater than the radial dimension of the second connecting rod 25.

[0119] Optionally, continue to refer to Figure 5 The semiconductor chip 21 is also provided with at least one sputtering object 214. In the direction perpendicular to the plane where the semiconductor chip 21 is located, the height difference H3 between the sputtering object 214 and the protective object 211 is greater than or equal to 0.5 mm.

[0120] As described above, the sputtering target 214 and the protection target 211 in the semiconductor chip product 20 are stepped in the horizontal direction, thus there is a height difference between them. During the sputtering process, in order to avoid the sputtering target 214, the height difference between the sputtering target 214 and the protection target 211 is set to 0.5 mm. In some other embodiments, this height difference may be set to other values ​​according to the size and shape of the semiconductor chip 21, which is not limited here.

[0121] Figure 12 This invention provides a method for local sputtering of a semiconductor chip product. For example... Figure 12 As shown, this local sputtering method specifically includes the following steps:

[0122] S121. A semiconductor chip product is fixed on a first surface of a carrier. The semiconductor chip product includes multiple semiconductor chips, and each semiconductor chip is provided with at least one protected object.

[0123] The carrier is used to carry the semiconductor chip product. In this embodiment, the semiconductor chip product is in the shape of a strip. When the strip product is placed in the carrier, in order to ensure the accuracy of the connection between the semiconductor chip and the carrier, the length of the carrier in the horizontal direction must be greater than or equal to the length of the strip product.

[0124] Optionally, before fixing the semiconductor chip product on the first surface of the carrier, the method further includes: attaching a pyrolytic double-sided adhesive layer to the first surface of the carrier, wherein the pyrolytic double-sided adhesive layer bonds and fixes the semiconductor chip product to the carrier, and undergoes pyrolysis within a preset temperature range.

[0125] It should be noted that, based on the technical content regarding the pyrolytic double-sided adhesive layer provided in the above embodiments, the semiconductor chip product is attached to the first surface of the carrier by applying the pyrolytic double-sided adhesive layer at high temperature.

[0126] S122. A pyrolysis protection layer is attached to the side of the semiconductor chip product facing away from the first surface of the carrier, such that the pyrolysis protection layer covers at least the protected object on the semiconductor chip product.

[0127] A pyrolytic protective layer can be applied to the side of a semiconductor chip product facing away from the carrier by means of roller application, spiral spraying, or strip application.

[0128] S123. Use a pressure plate to press the pyrolysis protective layer together, so that the pyrolysis protective layer is bonded to the semiconductor chip product.

[0129] The pressure plate can be pressed downwards mechanically. In this embodiment, the pressure plate includes multiple protruding structures. These protruding structures are used to press down on the protected object in the semiconductor chip protection zone to ensure a tight bond between the pyrolysis protective layer on the surface of the protected object and the chip product.

[0130] It should be noted that the pressure of the pressure plate can be manually controlled according to the degree of adhesion between the pyrolysis protective layer and the semiconductor chip product. This technology is well known to those skilled in the art and will not be elaborated here.

[0131] S124. Sputtering is performed on the semiconductor chip product with the pyrolysis protective layer attached.

[0132] S124. Heat the semiconductor chip product within a preset temperature range to cause the pyrolysis protective layer to pyrolyze and detach from the semiconductor chip product.

[0133] Since a semiconductor chip includes a sputtering object and a protective object, and there is a height difference between the protective object and the sputtering object in the horizontal direction, in order to protect the protective object in the chip from being sputtered during the sputtering process, a pyrolytic protective layer is attached to the protective object of the product and sputtered. After the sputtering is completed, the pyrolytic protective layer is detached from the semiconductor chip by high-temperature pyrolysis within a preset temperature range, leaving no foreign matter residue on the chip surface, thus achieving complete detachment of the pyrolytic protective layer.

[0134] Optionally, the preset temperature range is 150℃-180℃.

[0135] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. A local sputtering fixture for semiconductor chip products, characterized in that, include: A carrier for carrying and fixing a semiconductor chip product, the semiconductor chip product comprising multiple semiconductor chips, each semiconductor chip having at least one protected object; the semiconductor chip includes a protected area and a sputtering area, the protected object being located in the protected area; A pyrolysis protective layer is used to be attached to the side of the semiconductor chip product facing away from the carrier, and at least covers the protective object on the semiconductor chip product, and undergoes pyrolysis within a preset temperature range; A pressure plate is used to press and bond the pyrolysis protective layer to the semiconductor chip product. The pressure plate includes multiple protruding structures, and the vertical projections of the multiple protruding structures on the plane where the semiconductor chip product is located correspond one-to-one with the protected areas of the multiple semiconductor chips. The pyrolysis protective layer has a receiving groove on the side surface facing the semiconductor chip product. The top of the protruding structure is provided with a groove structure, which is used to cover the protected object; the depth of the groove structure is the same as the depth of the receiving groove.

2. The local sputtering fixture according to claim 1, characterized in that, It also includes a pyrolytic double-sided adhesive layer, which is used to adhere to the first surface of the carrier and to bond and fix the semiconductor chip product on the carrier, and undergoes pyrolysis within a preset temperature range.

3. The local sputtering fixture according to claim 2, characterized in that, Both the pyrolytic protective layer and the pyrolytic double-sided adhesive layer include an adhesive layer, a buffer layer, and a pyrolytic adhesive layer stacked sequentially. In the pyrolysis protective layer, the buffer layer and the adhesive layer are sequentially stacked on the side of the pyrolysis adhesive layer away from the semiconductor chip product; In the pyrolytic double-sided adhesive layer, the buffer layer and the pyrolytic adhesive layer are sequentially stacked on the side of the adhesive layer away from the carrier.

4. The local sputtering fixture according to claim 1, characterized in that, The pyrolysis protective layer is attached to the side of the semiconductor chip product facing away from the carrier, and the protected object on the semiconductor chip product is housed in the receiving groove.

5. The local sputtering fixture according to claim 4, characterized in that, The distance between the sidewall of the receiving groove and the sidewall of the protected object is a first preset distance, which is greater than or equal to 0.1 mm.

6. The local sputtering fixture according to claim 5, characterized in that, The distance between the bottom of the receiving groove and the top of the protected object is a second preset distance, which is greater than or equal to 0.4 mm.

7. The local sputtering fixture according to claim 6, characterized in that, The pyrolytic protective layer includes an adhesive layer, a buffer layer, and a pyrolytic adhesive layer stacked sequentially; in the pyrolytic protective layer, the buffer layer and the adhesive layer are stacked sequentially on the side of the pyrolytic adhesive layer opposite to the semiconductor chip product. The difference between the thickness of the buffer layer and the height of the protected object is greater than or equal to 0.4 mm.

8. The local sputtering fixture according to claim 7, characterized in that, The adhesive layer is a polyimide adhesive layer, and the buffer layer is a foam adhesive layer.

9. The local sputtering fixture according to claim 1, characterized in that, The semiconductor chip is further provided with at least one sputtering object. In the direction perpendicular to the plane where the semiconductor chip is located, the height value of the sputtering object is H1, and in the direction perpendicular to the plane where the pressure plate is located, the height value of the protrusion structure is H2, where H2 > H1.

10. The partial sputtering fixture according to claim 9, characterized in that, ΔH = H2 - H1, ΔH ≥ 0.2 mm.

11. The local sputtering fixture according to claim 1, characterized in that, The preset temperature range is 150℃-180℃.

12. A semiconductor chip product, characterized in that, Sputtering is performed using a local sputtering fixture for a semiconductor chip product as described in any one of claims 1-11, wherein the semiconductor chip product comprises: Printed circuit boards; Multiple semiconductor chips are located on the printed circuit board; each semiconductor chip includes a sputtering area and a protection area, and at least one protected object is disposed on the semiconductor chip, the protected object being located in the protection area; The frame is fixedly connected to the edge of the printed circuit board and is perpendicular to the plane of the printed circuit board; Multiple first connecting rods are fixedly connected at both ends to the frame and the semiconductor chip, respectively; The local sputtering fixture includes at least a pressure plate, which includes multiple protrusions and a groove on the top of the protrusions. The protrusions correspond to the protection zone of the semiconductor chip, and the groove corresponds to the protected object.

13. The semiconductor chip product according to claim 12, characterized in that, It also includes multiple second connecting rods; the two ends of the second connecting rods are fixedly connected to two adjacent semiconductor chips.

14. The semiconductor chip product according to claim 13, characterized in that, The radial dimension of the first connecting rod is less than or equal to one-tenth of the circumference of the semiconductor chip.

15. The semiconductor chip product according to claim 12, characterized in that, The semiconductor chip is further provided with at least one sputtering object; in the direction perpendicular to the plane where the semiconductor chip is located, the height difference between the sputtering object and the protective object is greater than or equal to 0.5 mm.

16. A method for local sputtering of a semiconductor chip product, comprising sputtering using a local sputtering fixture for a semiconductor chip product as described in any one of claims 1-11, characterized in that, include: A semiconductor chip product is fixed on a first surface of a carrier. The semiconductor chip product includes multiple semiconductor chips, and each semiconductor chip is provided with at least one protected object. A pyrolytic protective layer is attached to the side of the semiconductor chip product facing away from the first surface of the carrier, and the pyrolytic protective layer covers at least the protected object on the semiconductor chip product. The pyrolysis protective layer is pressed together using a pressure plate to bond it to the semiconductor chip product. The semiconductor chip product with the pyrolysis protective layer attached is sputtered; The semiconductor chip product is heated within a preset temperature range, causing the pyrolysis protective layer to pyrolyze and detach from the semiconductor chip product.

17. The local sputtering method according to claim 16, characterized in that, Before fixing the semiconductor chip product to the first surface of the carrier, the method further includes: attaching a pyrolytic double-sided adhesive layer to the first surface of the carrier, wherein the pyrolytic double-sided adhesive layer bonds and fixes the semiconductor chip product to the carrier and undergoes pyrolysis within a preset temperature range.

18. The local sputtering method according to claim 16 or 17, characterized in that, The preset temperature range is 150℃-180℃.

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