A platinum thin film temperature sensor and its preparation method

Abstract

The present invention discloses a platinum thin film temperature sensor and a preparation method thereof, and relates to the technical field of semiconductor devices. The preparation method comprises: providing a ceramic substrate; performing carbon ion implantation on one surface of the ceramic substrate to form a carbon ion layer; etching the carbon ion layer to obtain a receiving groove located in the carbon ion layer; depositing an adhesion layer, a first platinum thin film layer and a second platinum thin film layer in the receiving groove in sequence; performing heat treatment on the second platinum thin film layer to thermally combine the second platinum thin film layer with the first platinum thin film layer to obtain a target platinum thin film layer; grinding the target platinum thin film layer to make the target platinum thin film layer flush with the surface of the ceramic substrate; sintering and fixing the end of the target platinum thin film layer and the end of the platinum wire at the end of the receiving groove; depositing a packaging layer on the ceramic substrate to obtain a platinum thin film temperature sensor. The present invention solves the problem in the prior art that the platinum thin film is prone to perforation, which affects the sensor performance and reduces the service life.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a platinum thin film temperature sensor and a preparation method thereof. Background Art

[0002] Platinum thin film temperature sensor is an electronic component that measures the temperature of the environment by using the resistance of platinum metal to change with temperature and the stable linear relationship between resistance and temperature.

[0003] At present, when preparing a platinum thin film temperature sensor, a buffer layer is usually made on a substrate material, a platinum thin film layer is made on the buffer layer, the platinum thin film layer is heat treated, and then the platinum thin film layer is connected to a platinum wire and the sensor is packaged to obtain a platinum thin film temperature sensor.

[0004] However, although platinum metal has good chemical stability, tiny perforations are prone to appear in the platinum film during heat treatment, which affects the response performance of the platinum thin film temperature sensor. In daily use, the perforations in the platinum film can easily cause cracks in the platinum film layer, thereby causing the platinum thin film temperature sensor to fail.

[0005] Therefore, there is still a problem that during the preparation process of platinum thin film temperature sensor, the platinum thin film is prone to perforation, which affects the sensor performance and reduces the service life. Summary of the invention

[0006] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a platinum thin film temperature sensor and a preparation method thereof, aiming to solve the problem in the prior art that the platinum thin film is prone to perforation, which affects the sensor performance and reduces the service life.

[0007] A first aspect of the present invention is to provide a method for preparing a platinum thin film temperature sensor, the method comprising:

[0008] providing a ceramic substrate;

[0009] Performing carbon ion implantation on one surface of the ceramic substrate to form a carbon ion layer in the ceramic substrate;

[0010] According to a preset mask, the carbon ion layer is etched to obtain a receiving groove which is inwardly recessed in the carbon ion layer;

[0011] Depositing an adhesion layer, a first platinum thin film layer and a second platinum thin film layer in the containing groove in sequence;

[0012] performing heat treatment on the second platinum thin film layer so that the second platinum thin film layer is thermally combined with the first platinum thin film layer to obtain a target platinum thin film layer located in the containing groove;

[0013] Grinding the target platinum thin film layer so that the target platinum thin film layer is flush with the surface of the ceramic substrate in the containing groove;

[0014] At the end of the containing groove, an end of the target platinum thin film layer and an end of the platinum wire are sintered and fixed;

[0015] A packaging layer is deposited on the ceramic substrate to cover the target platinum thin film layer and the junction between the target platinum thin film layer and the platinum wire, thereby obtaining a platinum thin film temperature sensor.

[0016] According to one aspect of the above technical solution, the step of etching the carbon ion layer according to a preset mask to obtain a receiving groove formed inwardly in the carbon ion layer includes:

[0017] Providing a mask plate, wherein the inner side of the mask plate is hollowed out;

[0018] The mask is positioned on the ceramic substrate, so that the inner side of the ceramic substrate is hollowed out through the mask to expose the surface of the carbon ion layer, while the outer periphery is shielded by the mask;

[0019] The carbon ion layer is etched to remove part of the material of the carbon ion layer, thereby obtaining a receiving groove which is located in the carbon ion layer and is recessed inward.

[0020] According to one aspect of the above technical solution, the step of etching the carbon ion layer to remove part of the material of the carbon ion layer to obtain a receiving groove formed inwardly in the carbon ion layer includes:

[0021] Etching the carbon ion layer using a dry etching process to remove part of the material of the carbon ion layer, thereby obtaining a first etching groove that is directly through the carbon ion layer;

[0022] On the outside of the first etching groove, the inner side wall of the carbon ion layer is etched to remove part of the material of the inner side wall of the carbon ion layer to obtain a second etching groove, and the second etching groove is connected to the first etching groove to form an integrated structure to obtain a receiving groove formed in the carbon ion layer and recessed inward.

[0023] According to one aspect of the above technical solution, the step of sequentially depositing an adhesion layer, a first platinum thin film layer and a second platinum thin film layer in the containing groove includes:

[0024] An adhesion layer, a first platinum thin film layer and a second platinum thin film layer are sequentially deposited in the first etching groove of the containing groove.

[0025] According to one aspect of the above technical solution, the step of heat treating the second platinum thin film layer to thermally combine the second platinum thin film layer with the first platinum thin film layer to obtain a target platinum thin film layer located in the containing groove includes:

[0026] Under the first heat treatment condition, preheating the second platinum thin film layer so that the temperature of the second platinum thin film layer rises to a preset value;

[0027] When the temperature of the second platinum thin film layer rises to a preset value, the second platinum thin film layer is heat treated under second heat treatment conditions, so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer and the edge abuts against the second etching groove, thereby obtaining a target platinum thin film layer located in the receiving groove.

[0028] According to one aspect of the above technical solution, when the temperature of the second platinum thin film layer rises to a preset value, the second platinum thin film layer is heat treated under a second heat treatment condition so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer and the edge thereof abuts against the second etching groove, and the step of obtaining a target platinum thin film layer located in the receiving groove includes:

[0029] When the temperature of the second platinum thin film layer rises to a preset value, the second platinum thin film layer is kept warm;

[0030] In the process of heat preservation of the second platinum thin film layer, platinum ions are injected into the surface of the second platinum thin film layer;

[0031] Under the second heat treatment condition, the second platinum thin film layer is heat treated so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer, and the platinum ions are thermally bonded to the second platinum thin film layer to obtain a target platinum thin film layer.

[0032] According to one aspect of the above technical solution, the preheating temperature in the first heat treatment condition is 300°C-350°C, the preheating time is 10min-15min, and nitrogen is introduced to construct a preheating atmosphere;

[0033] The heat treatment temperature in the second heat treatment condition is 600° C.-750° C., the heat treatment time is 30 min-1 h, and nitrogen is introduced to create a heat treatment atmosphere.

[0034] The second aspect of the present invention is to provide a platinum thin film temperature sensor, which is prepared by the method described in the above technical solution, and the platinum thin film temperature sensor comprises:

[0035] Ceramic substrate;

[0036] A carbon ion layer is disposed inside the ceramic substrate, and a surface of the carbon ion layer is exposed from a surface of the ceramic substrate, and a receiving groove is provided inside the carbon ion layer;

[0037] An adhesive layer is disposed in the receiving groove;

[0038] A target platinum thin film layer is stacked on the adhesive layer in the containing groove, comprising a first platinum thin film layer and a second platinum thin film layer stacked, wherein the first platinum thin film layer and the second platinum thin film layer are thermally combined to form the target platinum thin film layer;

[0039] A platinum wire, the end of which is sintered and fixed to the end of the target platinum thin film layer;

[0040] and a packaging layer, wherein the packaging layer is arranged on the surface of the ceramic substrate and covers the target platinum thin film layer and the junction between the target platinum thin film layer and the platinum wire.

[0041] According to one aspect of the above technical solution, the accommodating groove includes a first etching groove and a second etching groove, the first etching groove is a straight-through structure, the second etching groove is located on the outer side of the first etching groove and the inner side wall of the carbon ion layer, and the first etching groove is connected to the second etching groove.

[0042] According to one aspect of the above technical solution, peripheries of the adhesion layer, the first platinum thin film layer and the second platinum thin film layer abut against the second etching groove.

[0043] Compared with the prior art, the platinum thin film temperature sensor and the preparation method thereof shown in the present invention have the following beneficial effects:

[0044] A ceramic substrate is provided, carbon ions are implanted into one of the surfaces of the ceramic substrate to obtain a carbon ion layer, and then the carbon ion layer is etched to form a groove, an adhesion layer, a first platinum film layer and a second platinum film layer are sequentially deposited in the groove, the second platinum film layer is heat-treated to thermally combine the second platinum film layer with the first platinum film layer to obtain a target platinum film layer located in the groove, which is beneficial to reduce the generation of perforations in the platinum film, and the target platinum film layer is ground to make the target platinum film layer flush with the surface of the ceramic substrate in the groove to reduce the height size of the sensor, and the end of the target platinum film layer and the end of the platinum wire are sintered and fixed at the end of the groove, and a packaging layer is deposited on the ceramic substrate to cover the target platinum film layer and the junction with the platinum wire to obtain a platinum thin film temperature sensor. The method shown in the present invention pre-fabricates a carbon ion layer and etches a receiving groove, and deposits a double-layer platinum thin film layer in the receiving groove. By thermally bonding the double-layer platinum thin film layer, perforation can be reduced or even prevented, thereby improving the response performance of the target platinum thin film layer in the present invention and ensuring the service life of the platinum thin film temperature sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0046] Figure 1 A schematic diagram of a process for preparing a platinum thin film temperature sensor according to an embodiment of the present invention;

[0047] Figure 2 This is a schematic diagram of the preparation process of a platinum thin film temperature sensor in one embodiment of the present invention;

[0048] Figure 3 A schematic diagram of the structure of a platinum thin film temperature sensor in one embodiment of the present invention;

[0049] Description of reference numerals:

[0050] Ceramic substrate 10 , carbon ion layer 20 , receiving groove 30 , adhesion layer 41 , first platinum thin film layer 42 , second platinum thin film layer 43 , target platinum thin film layer 44 , platinum wire 50 , packaging layer 60 . DETAILED DESCRIPTION

[0051] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings. Several embodiments of the present invention are shown in the accompanying drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0052] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0053] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0054] Embodiment 1

[0055] See also Figure 1 and Figure 2The first embodiment of the present invention provides a method for preparing a platinum thin film temperature sensor, the method comprising steps S10 to S80:

[0056] Step S10, providing a ceramic substrate;

[0057] In the present embodiment, the ceramic substrate 10 is a ceramic material mainly composed of aluminum oxide (Al 2 O 3 ) and has good conductivity, mechanical strength and high temperature resistance.

[0058] Step S20 , performing carbon ion implantation on one surface of the ceramic substrate to form a carbon ion layer in the ceramic substrate.

[0059] In this embodiment, the ceramic substrate 10 is firstly cleaned, specifically, the ceramic substrate 10 is cleaned with deionized water to remove impurities attached to the surface of the ceramic substrate 10, and then the ceramic substrate 10 is dried.

[0060] Specifically, carbon ion implantation is performed on the cleaned and dried ceramic substrate 10 using an ion implantation device. The ceramic substrate 10 is placed in the ion implantation device, and the carbon ion source is driven to output carbon ions, so that the carbon ions enter the ceramic substrate 10 through bombardment to form a carbon ion layer 20 inside the ceramic substrate 10.

[0061] Among them, the carbon ion implantation into the ceramic substrate 10 needs to control the ion implantation energy and the ion implantation dose. It is easy to understand that when the ion implantation energy is low, the depth of the carbon ions implanted into the ceramic substrate 10 is insufficient, otherwise the ceramic substrate 10 will be broken down. When the ion implantation dose is insufficient, the density of the carbon ions implanted into the ceramic substrate 10 is insufficient, and it cannot play an effective insulation and buffering effect.

[0062] In this embodiment, a modified carbon ion layer 20 can be formed in the ceramic substrate 10 by carbon ion implantation. Due to the insulating properties of carbon elements, a platinum thin film layer is produced in the carbon ion layer 20 in this embodiment, which not only ensures good insulation but also effectively buffers the platinum thin film.

[0063] Step S30, etching the carbon ion layer according to a preset mask to obtain a receiving groove that is recessed inwardly in the carbon ion layer.

[0064] The step of etching the carbon ion layer according to a preset mask to obtain a receiving groove formed inwardly in the carbon ion layer comprises:

[0065] Providing a mask plate, wherein the inner side of the mask plate is hollowed out;

[0066] The mask is positioned on the ceramic substrate, so that the inner side of the ceramic substrate is hollowed out through the mask to expose the surface of the carbon ion layer, while the outer periphery is shielded by the mask;

[0067] The carbon ion layer is etched to remove part of the material of the carbon ion layer, thereby obtaining a receiving groove which is located in the carbon ion layer and is recessed inward.

[0068] The step of etching the carbon ion layer to remove part of the material of the carbon ion layer to obtain a receiving groove formed inwardly in the carbon ion layer comprises:

[0069] Etching the carbon ion layer using a dry etching process to remove part of the material of the carbon ion layer, thereby obtaining a first etching groove that is directly through the carbon ion layer;

[0070] On the outside of the first etching groove, the inner side wall of the carbon ion layer is etched to remove part of the material of the inner side wall of the carbon ion layer to obtain a second etching groove, and the second etching groove is connected to the first etching groove to form an integrated structure to obtain a receiving groove formed in the carbon ion layer and recessed inward.

[0071] In this embodiment, in order to fabricate the platinum thin film layer in the carbon ion layer 20 , the carbon ion layer 20 needs to be etched to remove part of the material of the carbon ion layer 20 , thereby forming an inwardly recessed receiving groove 30 in the carbon ion layer 20 .

[0072] Specifically, in this embodiment, a mask is first provided, which is used to assist in the etching process. The inner side of the mask is a hollow area. By aligning the mask and placing it on the ceramic substrate 10, the hollow area of ​​the mask can be facing the carbon ion layer 20, and the outer side of the mask can block the ceramic substrate 10. By adopting a dry etching process, the mask can be used as a block to etch the unblocked area, thereby removing part of the material of the carbon ion layer 20 to obtain a accommodating groove 30 for accommodating a platinum thin film layer, etc.

[0073] Among them, the receiving groove 30 is a material removal area corresponding to the contour and size of the hollowed-out area of ​​the mask plate, which is smaller than the area of ​​the carbon ion layer 20, so that the horizontal cross-section of the carbon ion layer 20 is a first closed shape, so as to facilitate the production of a platinum thin film layer in the receiving groove 30 inside the modified carbon ion layer 20.

[0074] Step S40 , depositing an adhesion layer, a first platinum thin film layer, and a second platinum thin film layer in sequence in the containing groove.

[0075] The step of sequentially depositing an adhesion layer, a first platinum thin film layer and a second platinum thin film layer in the containing groove comprises:

[0076] An adhesion layer, a first platinum thin film layer and a second platinum thin film layer are sequentially deposited in the first etching groove of the containing groove.

[0077] In this embodiment, after etching the containing groove 30 in the carbon ion layer 20, an adhesion layer 41, a first platinum thin film layer 42 and a second platinum thin film layer 43 are sequentially deposited in the containing groove 30, which is beneficial to reducing the thickness of the platinum thin film temperature sensor and achieving the purpose of device miniaturization design.

[0078] Specifically, after the adhesion layer 41 is deposited in the receiving groove 30, a high-purity platinum target is used as a target material and the platinum target material is processed by magnetron sputtering to obtain a first platinum thin film layer 42, and a second platinum thin film layer 43 is formed on the surface of the first platinum thin film layer 42 in the same way.

[0079] It should be noted that the thickness of the first platinum thin film layer 42 and the second platinum thin film layer 43 shown in this embodiment are both smaller than those of traditional platinum thin film layers. The purpose is to combine the first platinum thin film layer 42 and the second platinum thin film layer 43 through specific process treatment, so as to obtain a target platinum thin film layer 44 with a thickness equal to or close to that of a traditional platinum thin film layer.

[0080] Among them, the thickness of the first platinum thin film layer 42 and the second platinum thin film layer 43 are equal, and their thicknesses are both 35nm-45nm. After the first platinum thin film layer 42 and the second platinum thin film layer 43 are combined, the thickness of the target platinum thin film layer 44 after combination is about 60nm-130nm, so that the target platinum thin film layer 44 has a thinner thickness, which improves the accuracy of the target platinum thin film layer 44 when used as the main temperature measuring element, and can effectively reduce the thickness of the platinum thin film temperature sensor, which is conducive to achieving the purpose of device miniaturization.

[0081] Step S50 , heat-treating the second platinum thin film layer to thermally combine the second platinum thin film layer with the first platinum thin film layer to obtain a target platinum thin film layer located in the containing groove.

[0082] The step of heat treating the second platinum thin film layer to thermally combine the second platinum thin film layer with the first platinum thin film layer to obtain a target platinum thin film layer located in the containing groove includes:

[0083] Under the first heat treatment condition, preheating the second platinum thin film layer so that the temperature of the second platinum thin film layer rises to a preset value;

[0084] When the temperature of the second platinum thin film layer rises to a preset value, the second platinum thin film layer is heat treated under second heat treatment conditions, so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer and the edge abuts against the second etching groove, thereby obtaining a target platinum thin film layer located in the receiving groove.

[0085] Among them, when the temperature of the second platinum thin film layer rises to a preset value, under a second heat treatment condition, heat-treating the second platinum thin film layer so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer and the edge thereof abuts against the second etching groove, and the step of obtaining a target platinum thin film layer located in the receiving groove includes:

[0086] When the temperature of the second platinum thin film layer rises to a preset value, the second platinum thin film layer is kept warm;

[0087] In the process of heat preservation of the second platinum thin film layer, platinum ions are injected into the surface of the second platinum thin film layer;

[0088] Under the second heat treatment condition, the second platinum thin film layer is heat treated so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer, and the platinum ions are thermally bonded to the second platinum thin film layer to obtain a target platinum thin film layer.

[0089] Specifically, in the process of heat treating the second platinum thin film layer so that it is thermally combined with the first platinum thin film layer to obtain the target platinum thin film layer, the heat treatment process is mainly divided into two stages, including a preheating stage and a formal annealing stage. In the preheating stage, the second platinum thin film layer will be preheated at a relatively low temperature. After the surface temperature rises to a preset value, the second platinum thin film layer will usually agglomerate due to the high temperature and cause perforations. Then, in this embodiment, a heat preservation treatment will be performed. During the heat preservation treatment, platinum ions are transported toward the surface of the second platinum thin film layer, for example, platinum ion implantation is performed by ion implantation, so that the platinum ions enter the second platinum thin film layer, and then a formal annealing treatment will be performed. Under the action of heat, the second platinum thin film layer will be combined with the first platinum thin film layer. At this time, the pre-injected platinum ions can fill the small gaps between the platinum materials, thereby reducing or preventing the generation of perforations in the target platinum thin film layer, which is beneficial to improving the response performance of the target platinum thin film layer in the actual temperature measurement process, and can improve the service life of the platinum thin film temperature sensor.

[0090] Wherein, the preheating temperature in the first heat treatment condition is 300°C-350°C, the preheating time is 10min-15min, and nitrogen is introduced to form a preheating atmosphere;

[0091] The heat treatment temperature in the second heat treatment condition is 600° C.-750° C., the heat treatment time is 30 min-1 h, and nitrogen is introduced to create a heat treatment atmosphere.

[0092] In the present embodiment, after the adhesion layer 41, the first platinum thin film layer 42 and the second platinum thin film layer 43 are sequentially deposited in the receiving groove 30, the second platinum thin film layer 43 located on the outermost surface is heat-treated, and the temperature of the second platinum thin film layer 43 is increased so that the second platinum thin film layer 43 and the first platinum thin film layer 42 are thermally affected and thermally bonded to obtain a target platinum thin film layer 44. When the second platinum thin film layer 43 is heat-treated, the high temperature can be transferred to the adhesion layer 41, so that the adhesion layer 41 adheres the target platinum thin film layer 44 obtained by thermal bonding to the receiving groove 30.

[0093] Among them, the adhesion layer 41 is an oxygen-containing platinum film layer, which can undergo metal transition under high temperature, so that the target platinum film layer 44 is adhered to the receiving groove 30 of the carbon ion layer 20, which can not only effectively reduce the height size of the device, but also protect the target platinum film layer 44 through the structure of the receiving groove 30 to prevent structural damage to the target platinum film layer 44 under various adverse factors.

[0094] Specifically, by heat treating the second platinum thin film layer 43, it is thermally bonded with the first platinum thin film layer 42. If the second platinum thin film layer 43 is perforated due to high temperature during the heat treatment process, part of the platinum material in the adjacent first platinum thin film layer 42 can also fill the above-mentioned perforations during the process of thermal bonding with it, thereby reducing or even completely preventing the occurrence of perforations in the platinum thin film layer, which is beneficial to improving the response performance of the target platinum thin film layer 44 and ensuring the service life of the platinum thin film temperature sensor.

[0095] Step S60 , grinding the target platinum thin film layer so that the target platinum thin film layer is flush with the surface of the ceramic substrate in the receiving groove.

[0096] In the present embodiment, a first platinum thin film layer 42 and a second platinum thin film layer 43 are deposited in the receiving groove 30 of the carbon ion layer 20, and after the first platinum thin film layer 42 and the second platinum thin film layer 43 are heat treated to produce thermal bonding to obtain a target platinum thin film layer 44, a mechanochemical mask is performed on the target platinum thin film layer 44, which can not only control the thickness of the target platinum thin film layer 44 so that it is flush with the surface of the ceramic substrate 10 in the receiving groove 30, but also improve the surface smoothness of the target platinum thin film layer 44 and improve the uniformity of the platinum material, which is beneficial to improving the response performance of the target platinum thin film layer 44.

[0097] Step S70, sintering and fixing the end of the target platinum thin film layer and the end of the platinum wire at the end of the containing groove.

[0098] In this embodiment, a target platinum thin film layer 44 is produced in the receiving groove 30 of the carbon ion layer 20. After the target platinum thin film layer 44 is ground, the end of the target platinum thin film layer 44 and the end of the platinum wire 50 are sintered and fixed by slurry coating at the end in the receiving groove 30, thereby connecting the target platinum thin film layer 44 to the wire. The target platinum thin film layer 44 changes resistance when the temperature changes, thereby obtaining the precise temperature of the environment through the conversion of electrical data.

[0099] Among them, there are two platinum wires 50, and the two interfaces of the target platinum thin film layer 44 are respectively connected to the corresponding platinum wires 50, and the end of the platinum wire 50 away from the target platinum thin film layer 44 is used to connect to the data processing unit, and the data processing unit is used to convert electrical data into temperature data, thereby realizing accurate temperature measurement of the environment.

[0100] Step S80, depositing a packaging layer on the ceramic substrate to cover the target platinum thin film layer and the junction between the target platinum thin film layer and the platinum wire to obtain a platinum thin film temperature sensor.

[0101] In this embodiment, after the target platinum thin film layer 44 is produced in the receiving groove 30 and connected to the platinum wire 50, a packaging layer 60 is deposited on the surface of the ceramic substrate 10, which can be a PPA material or a glass material. By depositing the packaging layer 60, the target platinum thin film layer 44 and the junction with the platinum wire 50 are covered, so that the target platinum thin film layer 44 is located in the recessed receiving groove 30, and a platinum thin film temperature sensor can be obtained.

[0102] See also Figure 3 The present invention also prepares a platinum thin film temperature sensor using the preparation method shown in the above embodiment, and the platinum thin film temperature sensor comprises:

[0103] Ceramic substrate 10;

[0104] A carbon ion layer 20 is disposed inside the ceramic substrate 10, and a surface of the carbon ion layer 20 is exposed to the surface of the ceramic substrate 10, and a receiving groove 30 is opened inside the carbon ion layer 20;

[0105] The adhesive layer 41 is disposed in the receiving groove 30;

[0106] A target platinum thin film layer 44 is stacked on the adhesive layer 41 in the containing groove 30, including a first platinum thin film layer 42 and a second platinum thin film layer 43 stacked, and the first platinum thin film layer 42 and the second platinum thin film layer 43 are thermally combined to form the target platinum thin film layer 44;

[0107] A platinum wire 50, the end of the platinum wire 50 is sintered and fixed to the end of the target platinum thin film layer 44;

[0108] and a packaging layer 60 , wherein the packaging layer 60 is disposed on the surface of the ceramic substrate 10 and covers the target platinum thin film layer 44 and a junction between the target platinum thin film layer 44 and the platinum wire 50 .

[0109] The receiving groove 30 includes a first etching groove and a second etching groove, the first etching groove is a straight-through structure, the second etching groove is located outside the first etching groove and on the inner side wall of the carbon ion layer 20, and the first etching groove is connected to the second etching groove.

[0110] The peripheries of the adhesion layer 41 , the first platinum thin film layer 42 and the second platinum thin film layer 43 are against the second etching groove.

[0111] In summary, compared with the prior art, the platinum thin film temperature sensor is manufactured by the preparation method shown in this embodiment, and the beneficial effect is that:

[0112] A ceramic substrate is provided, carbon ions are implanted into one of the surfaces of the ceramic substrate to obtain a carbon ion layer, and then the carbon ion layer is etched to form a groove, an adhesion layer, a first platinum film layer and a second platinum film layer are sequentially deposited in the groove, the second platinum film layer is heat-treated to thermally combine the second platinum film layer with the first platinum film layer to obtain a target platinum film layer located in the groove, which is beneficial to reduce the generation of perforations in the platinum film, and the target platinum film layer is ground to make the target platinum film layer flush with the surface of the ceramic substrate in the groove to reduce the height size of the sensor, and the end of the target platinum film layer and the end of the platinum wire are sintered and fixed at the end of the groove, and a packaging layer is deposited on the ceramic substrate to cover the target platinum film layer and the junction with the platinum wire to obtain a platinum thin film temperature sensor. The method shown in this embodiment pre-fabricates a carbon ion layer and etches a receiving groove, and deposits a double-layer platinum thin film layer in the receiving groove. By thermally bonding the double-layer platinum thin film layer, perforation can be reduced or even prevented, thereby improving the response performance of the target platinum thin film layer in this embodiment and ensuring the service life of the platinum thin film temperature sensor.

[0113] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0114] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for those of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A method for preparing a platinum thin film temperature sensor, characterized in that: The preparation method comprises: providing a ceramic substrate; Performing carbon ion implantation on one surface of the ceramic substrate to form a carbon ion layer in the ceramic substrate; According to a preset mask, the carbon ion layer is etched to obtain a receiving groove which is inwardly recessed in the carbon ion layer; Depositing an adhesion layer, a first platinum thin film layer and a second platinum thin film layer in the containing groove in sequence; performing heat treatment on the second platinum thin film layer so that the second platinum thin film layer is thermally combined with the first platinum thin film layer to obtain a target platinum thin film layer located in the containing groove; Grinding the target platinum thin film layer so that the target platinum thin film layer is flush with the surface of the ceramic substrate in the containing groove; At the end of the containing groove, an end of the target platinum thin film layer and an end of the platinum wire are sintered and fixed; Depositing a packaging layer on the ceramic substrate to cover the target platinum thin film layer and the junction between the target platinum thin film layer and the platinum wire to obtain a platinum thin film temperature sensor; The step of etching the carbon ion layer according to a preset mask to obtain a receiving groove formed inwardly in the carbon ion layer comprises: Providing a mask plate, wherein the inner side of the mask plate is hollowed out; The mask is positioned on the ceramic substrate, so that the inner side of the ceramic substrate is hollowed out through the mask to expose the surface of the carbon ion layer, while the outer periphery is shielded by the mask; Etching the carbon ion layer to remove part of the material of the carbon ion layer, thereby obtaining a receiving groove that is located in the carbon ion layer and is recessed inward; The step of etching the carbon ion layer to remove part of the material of the carbon ion layer to obtain a receiving groove formed inwardly in the carbon ion layer comprises: Etching the carbon ion layer using a dry etching process to remove part of the material of the carbon ion layer, thereby obtaining a first etching groove that is directly through the carbon ion layer; On the outer side of the first etching groove, the inner side wall of the carbon ion layer is etched to remove part of the material of the inner side wall of the carbon ion layer to obtain a second etching groove, so that the second etching groove is connected with the first etching groove to form an integrated structure, and a receiving groove formed inwardly in the carbon ion layer is obtained; The step of sequentially depositing an adhesion layer, a first platinum thin film layer and a second platinum thin film layer in the containing groove comprises: Depositing an adhesion layer, a first platinum thin film layer and a second platinum thin film layer in sequence in the first etching groove of the containing groove; The step of heat treating the second platinum thin film layer to thermally combine the second platinum thin film layer with the first platinum thin film layer to obtain a target platinum thin film layer located in the containing groove includes: Under the first heat treatment condition, preheating the second platinum thin film layer so that the temperature of the second platinum thin film layer rises to a preset value; When the temperature of the second platinum thin film layer rises to a preset value, the second platinum thin film layer is heat treated under a second heat treatment condition, so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer and the edge of the second platinum thin film layer abuts against the second etching groove, thereby obtaining a target platinum thin film layer located in the containing groove; Among them, when the temperature of the second platinum thin film layer rises to a preset value, under a second heat treatment condition, heat-treating the second platinum thin film layer so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer and the edge thereof abuts against the second etching groove, and the step of obtaining a target platinum thin film layer located in the receiving groove includes: When the temperature of the second platinum thin film layer rises to a preset value, the second platinum thin film layer is kept warm; In the process of heat preservation of the second platinum thin film layer, platinum ions are injected into the surface of the second platinum thin film layer; Under the second heat treatment condition, the second platinum thin film layer is heat treated so that the second platinum thin film layer is thermally bonded to the first platinum thin film layer, and the platinum ions are thermally bonded to the second platinum thin film layer to obtain a target platinum thin film layer.

2. The method for preparing a platinum thin film temperature sensor according to claim 1, characterized in that: The preheating temperature in the first heat treatment condition is 300°C-350°C, the preheating time is 10min-15min, and nitrogen is introduced to form a preheating atmosphere; The heat treatment temperature in the second heat treatment condition is 600° C.-750° C., the heat treatment time is 30 min-1 h, and nitrogen is introduced to create a heat treatment atmosphere.

3. A platinum thin film temperature sensor, characterized in that: Prepared by the method according to any one of claims 1-2, the platinum thin film temperature sensor comprises: Ceramic substrate; A carbon ion layer is disposed inside the ceramic substrate, and a surface of the carbon ion layer is exposed from a surface of the ceramic substrate, and a receiving groove is provided inside the carbon ion layer; An adhesive layer is disposed in the receiving groove; A target platinum thin film layer is stacked on the adhesive layer in the containing groove, comprising a first platinum thin film layer and a second platinum thin film layer stacked, wherein the first platinum thin film layer and the second platinum thin film layer are thermally combined to form the target platinum thin film layer; A platinum wire, the end of which is sintered and fixed to the end of the target platinum thin film layer; and a packaging layer, wherein the packaging layer is arranged on the surface of the ceramic substrate and covers the target platinum thin film layer and the junction between the target platinum thin film layer and the platinum wire.

4. The platinum thin film temperature sensor according to claim 3, characterized in that: The containing groove includes a first etching groove and a second etching groove, the first etching groove is a straight-through structure, the second etching groove is located outside the first etching groove and on the inner side wall of the carbon ion layer, and the first etching groove is connected to the second etching groove.

5. The platinum thin film temperature sensor according to claim 4, characterized in that: The peripheries of the adhesion layer, the first platinum thin film layer and the second platinum thin film layer abut against the second etching groove.

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