A high-power microwave pulse field strength standard device and its traceability method
By designing a high-power microwave pulse field strength standard device including pulse signal source, power amplifier, directional coupler and reenter coaxial resonator, the existing devices are solved by solving the problems of large size, high cost and unstable output, and the existing devices are realized High-efficiency and stable high-power microwave pulse field strength generation and accurate traceability under low power excitation.
Patent Information
- Application Number
- CN202411369234.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-29
- Publication Date
- 2025-01-07
- Estimated Expiration
- 2044-09-29
AI Technical Summary
The existing high-power microwave pulse field strength generation device has problems such as large size, high cost and unstable output pulse source.
A high-power microwave pulse field strength standard device is designed, including a main control computer, pulse signal source, pulse power amplifier module, directional coupler, reentry coaxial resonator and microwave amplitude and phase-stable cable, which is excitated by small power. The field strength of high-power microwave pulses is generated, and a traceability method is provided to calibrate the field strength parameters.
It realizes a high-power microwave pulse high-field strength environment under low power excitation, with small volume and low cost, and can accurately trace the generated field strength, solving the problems of large volume, high cost and unstable output.
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Figure CN118897128B_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of microwave field intensity measurement and calibration, and in particular relates to a high-power microwave pulse field intensity standard device and a traceability method thereof. Background Art
[0002] High-power microwave electromagnetic pulses have the characteristics of high peak field intensity, narrow pulse width, steep rising edge, and repeatability. The radiation wavelength is in the range of centimeters to millimeters, that is, the frequency is in the range of 1GHz~300GHz. As a key parameter of high-power microwaves, the accuracy of its measurement is very important. In order to ensure the accuracy of the electric field strength measurement of the high-power microwave field strength test probe during the development and use, it is necessary to place it in a high-power microwave pulse standard field strength environment for calibration. Therefore, it is very important to establish a stable high-power microwave pulse field strength standard device.
[0003] At present, the high-power microwave pulse source used to establish a stable high-power microwave pulse field strength environment is generally based on electric vacuum technology, which has the disadvantage of unstable output power, which changes with time and environment. It is difficult and expensive to realize the ultra-stable high-power microwave pulse standard source. At the same time, the existing microwave high-field strength generating device is large in size and high in cost. It is necessary to break through the new method of generating high-field strength pulses at low cost under low-power excitation conditions, and develop an efficient, low-cost, small-volume high-power microwave pulse field strength generating device to simulate a stable high-power microwave pulse high-field strength environment for calibrating high-power microwave field strength test probes.
[0004] Therefore, the current microwave high-field strength generating devices have the problems of large size, high cost and unstable output microwave pulse source. Summary of the invention
[0005] The purpose of the present invention is to provide a high-power microwave pulse field strength standard device and a tracing method thereof, so as to solve the problems of large size, high cost and unstable output microwave pulse source of the current microwave high field strength generating device.
[0006] To achieve the above object, the present invention adopts the following technical solution:
[0007] On the one hand, this specification provides a high-power microwave pulse field strength standard device, comprising:
[0008] A main control computer, a pulse signal source, a pulse power amplifier module, a directional coupler, a re-entrant coaxial resonant cavity, a coupled injection probe and a microwave amplitude-stabilizing and phase-stabilizing cable; the main control computer controls the pulse signal source to generate a low-power pulse signal, and controls the pulse power amplifier module to amplify the low-power pulse signal, the pulse power amplifier module amplifies the low-power pulse signal to generate a high-power pulse signal and outputs it to the directional coupler, the directional coupler introduces the high-power pulse signal into the coupled injection probe through the microwave amplitude-stabilizing and phase-stabilizing cable, and the coupled injection probe then injects the high-power pulse signal into the re-entrant coaxial resonant cavity to generate a high-power microwave pulse field intensity.
[0009] On the other hand, this specification provides a method for tracing a high-power microwave pulse field intensity standard device, comprising:
[0010] Step 102, calibrating and tracing the parameter values measured by the vector network analyzer through an S parameter standard device to obtain S parameters; the S parameters include the coupling degree of the directional coupler, the attenuation value of the microwave amplitude and phase stable cable, and the reflection coefficient of the reentrant coaxial resonant cavity;
[0011] Step 104, calibrating and tracing the parameter value measured by the pulse power meter through a coaxial low-power standard device to obtain the coupling end power of the directional coupler;
[0012] Step 106, based on the coupling end power and S parameters of the directional coupler, calculate and obtain the injected net power of the re-entrant coaxial resonant cavity;
[0013] Step 108, based on the injected net power of the reentrant coaxial resonant cavity, the high-power microwave pulse field intensity is calculated to complete the value tracing of the high-power microwave pulse field intensity.
[0014] Based on the above technical solution, this specification can achieve the following technical effects:
[0015] This specification proposes a high-power microwave pulse field strength standard device and a traceability method thereof, which can stably generate a high-power microwave pulse high field strength environment under low-power excitation, and can be used for the calibration of a high-power microwave field strength test probe 1 to realize the construction of a high-power microwave pulse standard field. The device can efficiently and stably generate high-power microwave pulses with high field strength under low-power excitation conditions, and has the advantages of small size and low cost. At the same time, the field intensity generated by the high-power microwave pulse field strength standard device can be traced to ensure that its value is accurate and reliable, thereby solving the problems of large size, high cost and unstable output microwave pulse source of current microwave high field strength generating devices. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 The figure is a block diagram of a high-power microwave pulse field strength standard device in one embodiment of the present invention.
[0017] Figure 2 FIG. 4 is a schematic diagram of the structure of a re-entrant coaxial resonant cavity in one embodiment of the present invention.
[0018] Figure 3 1 is a graph showing the relationship between the electric field strength and the input net power in a re-entrant coaxial resonant cavity according to an embodiment of the present invention.
[0019] Figure 4 Schematic diagram of the inner conductor structure in one embodiment of the present invention.
[0020] Figure 5 FIG. 1 is a schematic diagram of the outer conductor structure in one embodiment of the present invention.
[0021] Figure 6 This is a diagram of the assembly model of a re-entrant coaxial resonant cavity in one embodiment of the present invention.
[0022] Figure 7 Schematic diagram and actual photograph of a coupling probe in one embodiment of the present invention.
[0023] Figure 8 Schematic diagram of a feeding unit assembled to a re-entrant coaxial resonant cavity in one embodiment of the present invention
[0024] Fig. 9 FIG. 1 is an overall assembly diagram of a re-entrant coaxial resonant cavity in one embodiment of the present invention.
[0025] Fig.10 The figure is a flow chart of a method for tracing a source of a high-power microwave pulse field intensity standard device in one embodiment of the present invention.
[0026] Fig.11 Schematic diagram of a traceability chain of a high-power microwave pulse field intensity standard device in one embodiment of the present invention.
[0027] 1. High-power microwave field strength test probe, 2. Coupling end, 3. Inner conductor, 4. Outer conductor, 5. First area, 6. Second area, 7. Inner conductor assembly hole, 8. Opening hole, 9. Fixing hole, 10. Feed unit fixing hole, 11. Feeding hole, 12. Outer conductor assembly hole, 13. Coupling injection probe DETAILED DESCRIPTION
[0028] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description and claims. It should be noted that the drawings are all in very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0029] It should be noted that, in order to clearly explain the content of the present invention, the present invention specifically cites multiple embodiments to further illustrate different implementations of the present invention, wherein the multiple embodiments are enumerated rather than exhaustive. In addition, for the sake of brevity of explanation, the contents mentioned in the previous embodiments are often omitted in the subsequent embodiments. Therefore, the contents not mentioned in the subsequent embodiments can refer to the previous embodiments accordingly. Example 1
[0030] Please refer to Figure 1 , Figure 1 The present embodiment provides a high-power microwave pulse field strength standard device with a second size condition. In this embodiment, the device includes:
[0031] A main control computer, a pulse signal source, a pulse power amplifier module, a directional coupler, a re-entrant coaxial resonant cavity, a coupled injection probe 13 and a microwave amplitude-stabilizing and phase-stabilizing cable; the main control computer controls the pulse signal source to generate a low-power pulse signal, and controls the pulse power amplifier module to amplify the low-power pulse signal, the pulse power amplifier module amplifies the low-power pulse signal to generate a high-power pulse signal and outputs it to the directional coupler, the directional coupler introduces the high-power pulse signal into the coupled injection probe 13 through the microwave amplitude-stabilizing and phase-stabilizing cable, and the coupled injection probe 13 then injects the high-power pulse signal into the re-entrant coaxial resonant cavity to generate a high-power microwave pulse field intensity.
[0032] In this embodiment, it also includes:
[0033] A pulse power meter, used to be connected to the directional coupler to measure the power at the coupling end of the directional coupler;
[0034] Vector network analyzer, used to measure the coupling degree of directional couplers, the attenuation value of microwave amplitude and phase stabilized cables, and the reflection coefficient of re-entrant coaxial resonant cavities;
[0035] The coupling end power of the directional coupler, the coupling degree of the directional coupler, the attenuation value of the microwave amplitude-stabilized and phase-stabilized cable, and the reflection coefficient of the re-entrant coaxial resonant cavity are used by the main control computer to trace the value of the high-power microwave pulse field intensity.
[0036] In this embodiment, it also includes:
[0037] The S parameter standard device is used to connect with the vector network analyzer to calibrate and trace the parameter values measured by the vector network analyzer to obtain the S parameters;
[0038] The coaxial low-power standard device is used to connect with the pulse power meter to calibrate and trace the parameter values measured by the pulse power meter.
[0039] In this embodiment, the reentrant coaxial resonant cavity includes a coupling end 2, an outer conductor 4 and an inner conductor 3 placed at the center of the outer conductor 4; the inner conductor 3 and the outer conductor 4 together form a resonant cavity, the bottom of the inner conductor 3 is connected to the bottom of the outer conductor 4, and a gap is left between the top of the inner conductor 3 and the top of the outer conductor 4; the coupling end 2 is installed on the outer conductor 4 and is connected to the coupling injection probe 13, and the high-power pulse signal is injected into the resonant cavity through the coupling end 2.
[0040] It should be noted here that the coupling end 2 includes a first connection end, a mounting end and a second connection end; the mounting end is connected to the outer conductor 4 through an opening 8 on the outer conductor 4, and the first connection end extends into the first area 5; the second connection end is connected to the coupling injection probe 13 to inject the high-power pulse signal into the resonant cavity.
[0041] In this embodiment, the resonant frequency of the re-entrant coaxial resonant cavity is inversely proportional to the height of the inner conductor 3 .
[0042] In this embodiment, the size of the reentrant coaxial resonant cavity satisfies the first size condition and the second size condition;
[0043] The first size condition is that the sum of the radius of the inner conductor 3 and the radius of the outer conductor 4 is less than a first size threshold; the first size threshold is calculated based on the height of the inner conductor 3 and the resonant frequency of the reentrant coaxial resonant cavity;
[0044] The second size condition is that the ratio of the radius of the outer conductor 4 to the radius of the inner conductor 3 is greater than or equal to a first preset threshold and less than or equal to a second preset threshold.
[0045] In this embodiment, the resonant cavity is divided into a first area 5 and a second area 6, the second area 6 is a cavity formed with a height of the gap between the top of the inner conductor 3 and the top of the outer conductor 4 and a width of the diameter of the inner conductor 3; the first area 5 is the other area in the outer conductor 4 except the area occupied by the second area 6 and the inner conductor 3; when the high-power pulse signal is injected into the resonant cavity, a high-power microwave pulse field intensity is generated in the second area 6.
[0046] In this embodiment, the low-power pulse signal and the high-power pulse signal are both narrow pulse signals.
[0047] Specifically, refer to Figure 1 , which is a block diagram of the composition of a high-power microwave pulse field strength standard device. The device consists of a pulse signal source, a pulse power amplifier, a directional coupler, a pulse peak power meter, a re-entrant coaxial resonant cavity, a coupled injection probe, and an amplitude- and phase-stabilizing cable.
[0048] Among them, the reentrant coaxial resonant cavity plays a key role. Its working principle is to use a small power pulse signal generated by a signal source, amplified by a pulse power amplifier, and then transmitted to the resonant cavity through a directional coupler. When the frequency of this signal matches the resonant frequency of the resonant cavity, a strong electric field will be generated in the cavity.
[0049] The amplitude-stabilized and phase-stabilized cable is used to connect the directional coupler and the coupled injection probe 13 to improve the stability of the excitation power injected into the resonant cavity.
[0050] The reentrant coaxial resonant cavity has the characteristics of concentrated and uniform electric field near the short-circuit surface. Under the premise of equal input power excitation, it can generate higher radiation field intensity than traditional transmission line and antenna radiation methods.
[0051] The relationship between the maximum electric field strength and input power in the reentrant coaxial resonant cavity is:
[0052] (1)
[0053] in is the quality factor of the cavity corresponding mode, is the input power, is the operating angular frequency, and The energy storage of the cavities of the first region 5 and the second region 6, respectively, can be obtained by integrating the field distribution in the corresponding volumes.
[0054] The signal source and amplifier are controlled by a computer to generate a microwave pulse excitation signal with a peak power of ≤200W, which is injected into the reentrant coaxial resonant cavity. According to formula 1, the maximum electric field strength in the resonant cavity can be obtained .
[0055] refer to Figure 2 , is a schematic diagram of the structure of the reentrant coaxial resonant cavity, where a is the radius of the inner conductor 3, b is the radius of the outer conductor 4, the inner conductor 3 and the outer conductor 4 together constitute the reentrant coaxial resonant cavity, L is the height of the outer conductor 4, d is the height of the built-in sample gap of the resonant cavity, and the height of the inner conductor 3 is .
[0056] When the excitation power is injected into the reentrant coaxial resonant cavity, a strong microwave electric field will be generated in the second region 6 in the resonant cavity, and its maximum field strength is .
[0057] It should be noted that by placing the high-power microwave field intensity test probe 1 at the maximum field intensity position of the second area 6 , the probe field intensity transfer coefficient can be calibrated.
[0058] The resonant frequency of the reentrant coaxial resonant cavity is:
[0059] (2)
[0060] in, , , is the height of the inner conductor 3.
[0061] It should be noted that the reentrant coaxial resonant cavity is derived from the coaxial transmission line. The main mode of the coaxial transmission line is the TEM mode. When the diameters of the inner conductor 3 and the outer conductor 4 on the cross section are comparable to the wavelength, the TE and TM high-order modes will be excited in the transmission line. In order to avoid the existence of high-order modes in the operating frequency range of the resonant cavity, the design cavity size range should meet the following requirements according to the operating frequency of the cavity:
[0062] First size condition: (3)
[0063] Second size condition: (4)
[0064] Preferably, b / a=3.46;
[0065] It should be noted here that the threshold range in the second size condition only provides a reference for the final design result. The final design result is obtained based on the design technical indicators such as operating frequency, power capacity, standing wave coefficient, etc., combined with the size conditions, through targeted size design, material design, and parameter scanning optimization.
[0066] By reasonably designing the structural dimensions of the re-entrant coaxial resonant cavity, a re-entrant coaxial resonant cavity with different resonant frequency points can be obtained, which can be used to generate high-power microwave pulse field intensities with different intensities at different frequency points.
[0067] Figure 2 The coupling end 2 in the coupling injection probe 13 connects the pulse signal source and the pulse power amplifier to generate an excitation signal Injected into the resonant cavity, thereby stimulating the generation of high-power microwave field intensity in the cavity.
[0068] refer to Figure 3 , which is a curve diagram of the relationship between the electric field strength and the input net power in a reentrant coaxial resonant cavity.
[0069] For example, according to equations (2) to (4), taking a 2.45 GHz reentrant coaxial resonant cavity as an example, a reentrant coaxial resonant cavity is designed. Considering the possible errors between the inner conductor 3 and the bottom end face, as well as the influence of the cavity gap, the actual cavity design dimensions are obtained through theoretical calculation combined with simulation design: a = 6.5 mm, b = 22.5 mm, L = 199 mm, d = 2.5 mm, and the cavity material is copper. The maximum microwave electric field intensity that can be generated in the reentrant coaxial resonant cavity With input net power The relationship is as Figure 3 When the peak power of the pulse input to the reentrant coaxial resonant cavity is 200W, a pulse field strength greater than 100 kV / m can be generated in the cavity.
[0070] Based on this, the device has the following beneficial effects:
[0071] 1. Provide a high-power microwave pulse field strength standard device, which consists of a pulse signal source, a power amplifier, a directional coupler, a peak power meter, a re-entrant coaxial resonant cavity, a coupled injection probe and an amplitude-stabilizing and phase-stabilizing cable, so as to realize the construction of a high-power microwave pulse standard field;
[0072] 2. Provide a re-entrant coaxial resonant cavity structure, which can generate a high-power microwave high-field environment in the cavity under low-power excitation. When the peak power input to the re-entrant coaxial resonant cavity is 200W, a pulse field strength greater than 100 kV / m can be generated in the cavity. Moreover, through reasonable design of its size and material, the re-entrant coaxial resonant cavity structure can achieve the generation of high-power microwave pulse field strengths of different sizes.
[0073] For example, this embodiment completes the design of the re-entrant resonant cavity size for a typical frequency point f1 of 4 GHz to 4.5 GHz.
[0074] The structure of the inner conductor 3 is as follows Figure 4 As shown. Figure 4 (a) is the three-dimensional graph of the inner conductor 3 units. Figure 4 (b) is a front view of the inner conductor 3 unit. The inner conductor 3 unit is responsible for forming the inner conductor 3 part of the reentrant coaxial resonant cavity. L0=176.5mm represents the length of the inner conductor 3, and h0=7mm is the base of the inner conductor 3, which is used to form the cavity boundary. Its value has nothing to do with microwave design. An inner conductor assembly hole 7 is reserved on it for assembly with the outer conductor 4 unit.
[0075] Figure 5 The model diagram of the outer conductor 4 units is given, where Figure 5 (a) is the three-dimensional graph of the outer conductor 4 units. Figure 5(b) is a front view of the outer conductor 4 unit. The outer conductor 4 unit is responsible for forming the outer conductor 4 part of the re-entrant coaxial resonant cavity, while taking into account the hole position of the feeding unit and the high-power microwave field strength test probe 1 and the corresponding outer conductor assembly hole 12. Where L=180mm represents the length of the cavity, hf=16mm represents the distance from the feeding port to the bottom of the cavity; hb=13mm, ha=3mm represents the side wall thickness and top wall thickness of the cavity, and the size of the value has nothing to do with microwave design.
[0076] Figure 6 The assembly model diagram of the reentrant coaxial resonant cavity is given, where Figure 6 (a) is a three-dimensional diagram of a reentrant coaxial resonant cavity. Figure 6 (b) is a front view of the reentrant coaxial resonant cavity. After the inner conductor 3 unit and the outer conductor 4 unit are assembled into one through the inner conductor assembly hole 7 and the outer conductor assembly hole 12, due to the difference between L and L0, there is a gap d=2.5mm between the top of the inner conductor 3 and the top of the outer conductor 4, corresponding to Figure 2 d in the figure constitutes a complete reentrant coaxial resonant cavity unit.
[0077] Figure 7 To couple the schematic diagram of the injection probe 13 with the actual photograph, the probe diameter rf=1.2mm is selected.
[0078] Figure 8 Schematic diagram of assembling the feed unit to the re-entrant coaxial resonant cavity. The insertion depth df of the coupling injection probe 13 can be controlled by mechanical regulation of the feed unit.
[0079] Key parameters of the reentrant coaxial resonant cavity Tables 1 and 2 respectively give the key parameters and other parameters of the reentrant resonant cavity for the typical frequency range of 4 GHz to 4.5 GHz.
[0080]
[0081]
[0082] The overall assembly of the final reentrant coaxial resonant cavity is as follows Fig. 9 Bringing the entire model into the inverse simulation software can verify the correctness of the model.
[0083] Based on this, the device has the following beneficial effects:
[0084] A high-power microwave pulse field strength standard device is provided, which consists of a pulse signal source, a power amplifier, a directional coupler, a peak power meter, a re-entrant coaxial resonant cavity, a coupled injection probe 13 and an amplitude-stabilizing and phase-stabilizing cable, so as to realize the construction of a high-power microwave pulse standard field.
[0085] A reentrant coaxial resonant cavity structure is provided, which can generate a high-power microwave high-field environment in the cavity under low-power excitation. When the peak power input to the reentrant coaxial resonant cavity is 200W, a pulse field strength greater than 100 kV / m can be generated in the cavity. Moreover, through reasonable design of its size and material, the reentrant coaxial resonant cavity structure can achieve the generation of high-power microwave pulse field strengths of different sizes.
[0086] In summary, this device can stably generate a high-power microwave pulse high-field strength environment under low-power excitation, and can be used for the calibration of a high-power microwave field strength test probe 1 to achieve the construction of a high-power microwave pulse standard field. This device can efficiently and stably generate high-power microwave pulse high-field strength under low-power excitation conditions, and has the advantages of small size and low cost. Example 2
[0087] Please refer to Fig.10 , Fig.10 The present embodiment provides a method for tracing the source of a high-power microwave pulse field intensity standard device. In this embodiment, the method includes:
[0088] Step 102, calibrating and tracing the parameter values measured by the vector network analyzer through an S parameter standard device to obtain S parameters; the S parameters include the coupling degree of the directional coupler, the attenuation value of the microwave amplitude and phase stable cable, and the reflection coefficient of the reentrant coaxial resonant cavity;
[0089] Step 104, calibrating and tracing the parameter value measured by the pulse power meter through a coaxial low-power standard device to obtain the coupling end power of the directional coupler;
[0090] Step 106, based on the coupling end power and S parameters of the directional coupler, calculate and obtain the injected net power of the re-entrant coaxial resonant cavity;
[0091] Step 108, based on the injected net power of the reentrant coaxial resonant cavity, the high-power microwave pulse field intensity is calculated to complete the value tracing of the high-power microwave pulse field intensity.
[0092] In this embodiment, one implementation of step 108 is:
[0093] Step 202, based on the height of the inner conductor 3, calculate and obtain the resonant frequency of the reentrant coaxial resonant cavity;
[0094] Step 204, based on the volumes of the first region 5 and the second region 6, calculating and obtaining the cavity energy storage of the first region 5 and the second region 6;
[0095] Step 206, based on the injected net power, the resonant frequency, and the cavity energy storage of the first region 5 and the second region 6 of the reentrant coaxial resonant cavity, the high-power microwave pulse field intensity is calculated to complete the value tracing of the high-power microwave pulse field intensity.
[0096] Specifically, refer to Fig.11 , provides a schematic diagram of the traceability chain of a high-power microwave pulse field intensity standard device. According to formula (1), the high-power microwave pulse field intensity Net power can be injected through the resonant cavity Perform value traceability and inject net power into the resonant cavity (dBm) can be calculated by formula (5):
[0097] (5)
[0098] in, is the coupling end power of the directional coupler, in dBm;
[0099] L 1 is the coupling degree of the directional coupler, in dB;
[0100] L s The attenuation value of the microwave stable amplitude and phase cable, in dB;
[0101] Γ is the resonant cavity reflection coefficient.
[0102] According to formula (5), P in Available through P 0. L 1. L s and Γ for value traceability, where L 1. L s and Γ are S parameters, measured by a vector network analyzer; P 0 is the power parameter measured by the pulse power meter. The parameter values measured by the vector network analyzer and the pulse power meter are calibrated and traced through the S parameter standard device and the coaxial low power standard device, and finally the field strength parameters of the high power microwave pulse field strength standard device are realized. E max Traceability of value.
[0103] Based on this, this embodiment provides a high-power microwave pulse field strength standard device traceability method, which calibrates the high-power microwave pulse field strength in the re-entrant coaxial resonant cavity of the device. E max The net power injected through its resonant cavity P in Conduct value traceability. Net power injected into the resonant cavity P inThe S parameters of the directional coupler, re-entrant coaxial resonant cavity and microwave stable amplitude and phase cable and the power parameters of the coupled end of the directional coupler are traced; the directional coupler, re-entrant coaxial resonant cavity and microwave stable amplitude and phase cable are calibrated and traced through the vector network analyzer, and the power of the coupled end of the directional coupler is calibrated and traced through the pulse power meter; the vector network analyzer and the pulse power meter are calibrated and traced through the S parameter standard device and the coaxial low-power standard device, and finally the field strength parameters of the high-power microwave pulse field strength standard device are realized. E max Traceability of value.
[0104] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other. Each embodiment focuses on the differences between it and other embodiments.
[0105] The above is a description of a specific embodiment of the present specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps described in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the specific order or sequential order shown in the process depicted in the drawings is not necessarily required to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.
[0106] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims
1. A high-power microwave pulse field strength standard device, characterized in that: include: A main control computer, a pulse signal source, a pulse power amplifier module, a directional coupler, a re-entrant coaxial resonant cavity, a coupled injection probe and a microwave amplitude-stabilizing and phase-stabilizing cable; the main control computer controls the pulse signal source to generate a low-power pulse signal, and controls the pulse power amplifier module to amplify the low-power pulse signal; the pulse power amplifier module amplifies the low-power pulse signal to generate a high-power pulse signal and outputs it to the directional coupler; the directional coupler guides the high-power pulse signal into the coupled injection probe through the microwave amplitude-stabilizing and phase-stabilizing cable; the coupled injection probe then injects the high-power pulse signal into the re-entrant coaxial resonant cavity to generate a high-power microwave pulse field intensity; A pulse power meter, connected to the directional coupler, for measuring the power at the coupling end (2) of the directional coupler; A vector network analyzer is used to measure the coupling degree of the directional coupler, the attenuation value of the microwave amplitude-stabilized and phase-stabilized cable, and the reflection coefficient of the re-entrant coaxial resonant cavity; The power of the coupling end (2) of the directional coupler, the coupling degree of the directional coupler, the attenuation value of the microwave amplitude-stabilizing and phase-stabilizing cable, and the reflection coefficient of the re-entrant coaxial resonant cavity are used by a main control computer to perform value tracing on the high-power microwave pulse field intensity; An S parameter standard device is used to connect to the vector network analyzer, calibrate and trace the parameter values measured by the vector network analyzer, and obtain S parameters; A coaxial low-power standard device, used to connect to the pulse power meter and perform calibration and traceability on the parameter values measured by the pulse power meter; The re-entrant coaxial resonant cavity comprises a coupling end (2), an outer conductor (4) and an inner conductor (3) arranged at the center of the outer conductor (4); the inner conductor (3) and the outer conductor (4) together form a resonant cavity, the bottom of the inner conductor (3) is connected to the bottom of the outer conductor (4), and a gap is left between the top of the inner conductor (3) and the top of the outer conductor (4); the coupling end (2) is mounted on the outer conductor (4) and connected to the coupling injection probe to inject the high-power pulse signal into the resonant cavity; The size of the reentrant coaxial resonant cavity satisfies the first size condition and the second size condition; The first size condition is that the sum of the radius of the inner conductor (3) and the radius of the outer conductor (4) is less than a first size threshold; the first size threshold is calculated based on the height of the inner conductor (3) and the resonant frequency of the reentrant coaxial resonant cavity; The second size condition is that the ratio of the radius of the outer conductor (4) to the radius of the inner conductor (3) is greater than or equal to a first preset threshold and less than or equal to a second preset threshold; The re-entrant coaxial resonant cavity is derived from a coaxial transmission line. The main mode of the coaxial transmission line is a TEM mode. When the diameters of the inner and outer conductors (4) on the cross section are comparable to the wavelength, TE and TM high-order modes are excited in the transmission line. To avoid the existence of high-order modes within the operating frequency range of the re-entrant coaxial resonant cavity, the cavity size range of the re-entrant coaxial resonant cavity should meet the first size condition and the second size condition according to the operating frequency point of the cavity: The first size condition: (a+b)<c / (π·f r )(1) Second size condition: 2≤(b / a)≤6(2) Where a is the radius of the inner conductor (3), b is the radius of the outer conductor (4), and f r is the resonant frequency of the reentrant coaxial resonant cavity, c = 3 × 10 8 m / s.
2. The high-power microwave pulse field strength standard device according to claim 1, characterized in that: The resonant frequency of the re-entrant coaxial resonant cavity is inversely proportional to the height of the inner conductor (3).
3. The high-power microwave pulse field strength standard device according to claim 1, characterized in that: The resonant cavity is divided into a first region (5) and a second region (6); the second region (6) is a cavity formed by taking the gap between the top of the inner conductor (3) and the top of the outer conductor (4) as the height and the diameter of the inner conductor (3) as the width; the first region (5) is the other region in the outer conductor (4) except the region occupied by the second region (6) and the inner conductor (3); when the high-power pulse signal is injected into the resonant cavity, a high-power microwave pulse field intensity is generated in the second region (6).
4. The high-power microwave pulse field strength standard device according to claim 1, characterized in that: The low-power pulse signal and the high-power pulse signal are both narrow pulse signals.
5. A tracing method applied to any one of the high-power microwave pulse field strength standard devices described in claims 1-4, characterized in that: include: Calibrate and trace the parameter values measured by the vector network analyzer through an S parameter standard device to obtain S parameters; the S parameters include the coupling degree of the directional coupler, the attenuation value of the microwave amplitude-stabilized and phase-stabilized cable, and the reflection coefficient of the reentrant coaxial resonant cavity; Calibrate and trace the parameter value measured by the pulse power meter through a coaxial low-power standard device to obtain the power at the coupling end (2) of the directional coupler; Based on the power at the coupling end (2) of the directional coupler and the S parameters, the net power injected into the re-entrant coaxial resonant cavity is calculated; Based on the injected net power of the reentrant coaxial resonant cavity, the value traceability of high-power microwave pulse field intensity is completed; The net power injected into the resonant cavity is P in It can be calculated by formula (3): P in =P0+L1- L s -Γ 2 ·(P0+L1) / 2 (3) Wherein, P0 is the power at the coupling end (2) of the directional coupler, in dBm; L1 is the coupling degree of the directional coupler, in dB; L s The attenuation value of the microwave stable amplitude and phase cable, in dB; Γ is the resonant cavity reflection coefficient; According to formula (3), P in Through P0, L1, L s and Γ for value traceability, where L1, L s and Γ are S parameters measured by a vector network analyzer; P0 is a power parameter measured by a pulse power meter.
6. The traceability method according to claim 5, characterized in that: The method of completing the value tracing of the high-power microwave pulse field intensity based on the injected net power of the re-entrant coaxial resonant cavity includes: The high-power microwave pulse field intensity in the reentrant coaxial resonant cavity is traced through the net power injected into the resonant cavity; the net power injected into the resonant cavity is traced through the S parameters and the power at the coupling end (2) of the directional coupler; the S parameters are calibrated and traced through a vector network analyzer, and the power at the coupling end (2) of the directional coupler is calibrated and traced through a pulse power meter; the vector network analyzer and the pulse power meter are calibrated and traced through an S parameter standard device and a coaxial low-power standard device, and finally the field intensity of the high-power microwave pulse field intensity standard device is traced.
Citation Information
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