A physical vapor deposition heating platform
By designing a conical bearing tank and circulating heating system on the physical vapor deposition heating platform, the problem of uneven heating of wafers of different diameters is solved, uniform heating of wafers of different diameters is achieved, and film formation quality and processing efficiency are improved. .
Patent Information
- Application Number
- CN202411408061.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-10
- Publication Date
- 2024-12-27
- Estimated Expiration
- 2044-10-10
AI Technical Summary
Wafers of different diameters are heated unevenly on the heating table, which reduces the film formation quality, and frequent replacement of the heating table affects processing efficiency.
A physical vapor deposition heating platform was designed, using a conical bearing groove and a circulation heating system. The heated metal powder was circulated between the bearing groove and the heating box through the lifting and lowering screw conveying pipes, so as to realize the wafers of different diameters. uniform heating, and optimize the distribution and heating effect of metal powder through sensors and vibrators.
The uniform heating of wafers of different diameters is achieved, and the film formation quality and processing efficiency of the wafer are improved.
Smart Images
Figure CN118910574B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a heating platform, in particular to a physical vapor deposition heating platform applied in the field of vapor deposition heating. Background Art
[0002] Wafer physical vapor deposition technology refers to the technology of using physical methods under vacuum conditions to vaporize the surface of the material source into gaseous atoms or molecules, or partially ionize it into ions, and depositing a thin film with certain special functions on the surface of the wafer through a low-pressure gas process.
[0003] In order to improve the film quality of the wafer, the wafer will be placed on a heating table for heating during deposition. The size of the heating table is fixed. When wafers of different diameters are placed on the heating table, the wafers will be heated unevenly, reducing the film quality of the wafer. If the heating table is replaced frequently, the processing efficiency will be affected. Summary of the invention
[0004] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is that when wafers of different diameters are placed on a heating table, the wafers will be heated unevenly, thereby reducing the film forming quality of the wafers. If the heating table is replaced frequently, the processing efficiency will be affected.
[0005] In order to solve the above problems, the present invention provides a physical vapor deposition heating platform, including a deposition chamber, the bottom end of the deposition chamber is fixedly connected to a heating chamber, the inner wall of the bottom end of the deposition chamber is fixedly connected to a heating platform, the bottom end of the heating platform is provided with an inner cavity, the top end of the heating platform is provided with a conical bearing groove, a rising spiral conveying pipe is fixedly connected between the bottom end of the bearing groove and the bottom end of the deposition chamber, the top end of the rising spiral conveying pipe extends to the inner side of the bearing groove and is fixedly connected to a discharge pipe, the bottom end of the rising spiral conveying pipe extends to the inner side of the heating chamber, the bottom end of the deposition chamber is fixedly connected to a descending spiral conveying pipe, the top end of the descending spiral conveying pipe is located on the inner side of the inner cavity, the bottom end of the descending spiral conveying pipe extends to the inner side of the heating chamber, and the descending spiral conveying pipe is fixedly connected to the bottom end of the deposition chamber. A reflux pipe is fixedly connected between the top of the conveying pipe and the bearing tank, a lower driving machine and an upper driving machine are fixedly connected to the bottom end of the heating chamber near the ascending spiral conveying pipe and the inner bottom end of the heating chamber near the descending spiral conveying pipe, respectively, the output end of the lower driving machine and the output end of the upper driving machine are fixedly connected to the bottom end of the ascending spiral conveying pipe and the bottom end of the descending spiral conveying pipe, a heating box is fixedly connected to the inner wall of the heating chamber, the heating box is located between the ascending spiral conveying pipe and the descending spiral conveying pipe, a feeding pipe is fixedly connected between the top of the heating box and the bottom end of the descending spiral conveying pipe, and between the bottom end of the heating box and the bottom end of the ascending spiral conveying pipe, an electric heating pipe is fixedly connected to the inner wall of the bottom end of the heating box, and the interior of the heating box is filled with metal powder.
[0006] As a further improvement of the present application, an upper distance sensor is fixedly connected to the inner wall of the top of the deposition chamber.
[0007] As a further improvement of the present application, a protective plate is fixedly connected to the inner wall at the top of the heating box, and a lower distance sensor is fixedly connected to the inner wall of the heating box located inside the protective plate.
[0008] As a further improvement of the present application, a plurality of evenly distributed upper vibrating rods are fixedly connected to the bottom end of the bearing groove.
[0009] As another improvement of the present application, a plurality of evenly distributed lower vibrating rods are fixedly connected to the inner wall of the bottom end of the heating box.
[0010] As another improvement supplement of the present application, a lifting rod is fixedly connected to the bottom end of the deposition chamber, the lifting rod is located on the inner side of the inner cavity, the telescopic end of the lifting rod passes through the heating table between the inner cavity and the supporting groove and extends to the inside of the supporting groove, the telescopic end of the lifting rod is fixedly connected to the tray, and the telescopic end of the lifting rod is sealed and slidably connected to the penetration point of the heating table.
[0011] As another improved supplement of the present application, an embedded groove is provided on the side wall of the bearing groove, and a buffer layer is fixedly connected to the inner wall of the embedded groove.
[0012] To summarize, before deposition on the wafer, start the lower driving machine to drive the ascending spiral conveying pipe to move the heated metal powder to the inside of the supporting tank, and make the top surface of the metal powder inside the supporting tank 0-2mm away from the wafer, and then start the upper driving machine to drive the descending spiral conveying pipe to transfer the metal powder inside the supporting tank back to the inside of the heating box. At this time, the metal powder circulates and heats and releases heat inside the heating box and the supporting tank, thereby heating the wafer. Due to the setting of the shape of the supporting tank, the supporting tank can carry wafers of different specifications. By controlling the amount of metal powder inside the supporting tank, the metal powder can be made to fit the bottom surface of the wafer approximately for radiant heating. Through the above setting, the device can provide uniform heating for wafers of different diameters, thereby improving the overall processing efficiency of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 This is a front cross-sectional view of a deposition chamber and a heating chamber in the first embodiment of the present application;
[0014] Figure 2 It is a front cross-sectional view of the heating platform in the first and second embodiments of the present application;
[0015] Figure 3 This is a front cross-sectional view of the heating box in the first and second embodiments of the present application;
[0016] Figure 4 This is a state diagram of a large-diameter wafer being located inside a bearing slot in the first embodiment of the present application;
[0017] Figure 5 This is a state diagram of a small-diameter wafer being located inside a bearing slot in the first embodiment of the present application;
[0018] Figure 6 It is a front cross-sectional view of the embedded groove in the first and second embodiments of the present application.
[0019] Description of the numbers in the figure:
[0020] 1. Deposition chamber; 2. Heating chamber; 3. Heating table; 301. Inner cavity; 4. Carrying tank; 401. Embedded tank; 5. Feeding pipe; 6. Metal powder; 7. Upper distance sensor; 8. Ascending spiral conveying pipe; 801. Discharge pipe; 9. Descending spiral conveying pipe; 901. Reflux pipe; 10. Buffer layer; 11. Lower driving machine; 12. Upper driving machine; 13. Heating box; 14. Electric heating tube; 15. Lifting rod; 16. Tray; 17. Upper vibrating rod; 18. Lower vibrating rod; 19. Protective plate; 20. Lower distance sensor. DETAILED DESCRIPTION
[0021] Two implementation modes of the present application are described in detail below with reference to the accompanying drawings.
[0022] The first implementation method:
[0023] Figure 1-6 A physical vapor deposition heating platform is shown, including a deposition chamber 1, the bottom end of the deposition chamber 1 is fixedly connected to a heating chamber 2, the inner wall of the bottom end of the deposition chamber 1 is fixedly connected to a heating platform 3, the bottom end of the heating platform 3 is provided with an inner cavity 301, the top end of the heating platform 3 is provided with a conical bearing groove 4, a rising spiral conveying pipe 8 is fixedly connected between the bottom end of the bearing groove 4 and the bottom end of the deposition chamber 1, the top end of the rising spiral conveying pipe 8 extends to the inner side of the bearing groove 4 and is fixedly connected to a discharge pipe 801, the bottom end of the rising spiral conveying pipe 8 extends to the inner side of the heating chamber 2, the bottom end of the deposition chamber 1 is fixedly connected to a descending spiral conveying pipe 9, the top end of the descending spiral conveying pipe 9 is located on the inner side of the inner cavity 301, the bottom end of the descending spiral conveying pipe 9 extends to the inner side of the heating chamber 2, the top end of the descending spiral conveying pipe 9 is connected to the bearing groove 4 is fixedly connected with a reflux pipe 901, the bottom end of the heating chamber 2 near the ascending spiral conveying pipe 8 and the inner bottom end of the heating chamber 2 near the descending spiral conveying pipe 9 are respectively fixedly connected with a lower driving machine 11 and an upper driving machine 12, the output end of the lower driving machine 11 and the output end of the upper driving machine 12 are respectively fixedly connected to the bottom end of the ascending spiral conveying pipe 8 and the bottom end of the descending spiral conveying pipe 9, a heating box 13 is fixedly connected to the inner wall of the heating chamber 2, the heating box 13 is located between the ascending spiral conveying pipe 8 and the descending spiral conveying pipe 9, a feeding pipe 5 is fixedly connected between the top of the heating box 13 and the bottom end of the descending spiral conveying pipe 9, and between the bottom end of the heating box 13 and the bottom end of the ascending spiral conveying pipe 8, an electric heating pipe 14 is fixedly connected to the inner wall of the bottom end of the heating box 13, and the interior of the heating box 13 is filled with metal powder 6.
[0024] Before deposition on the wafer, the wafer is moved to the center of the carrier tank 4 by a robot arm and placed inside the carrier tank 4, and the center point of the carrier tank 4 is in the same straight line with the center point of the wafer, and then the electric heating tube 14 is started to heat the metal powder 6, and the lower driving machine 11 is started to drive the ascending spiral conveying pipe 8 to move the heated metal powder 6 to the inside of the carrier tank 4, and the top surface of the metal powder 6 located inside the carrier tank 4 is 0-2mm away from the wafer, and then the upper driving machine 12 is started to drive the descending spiral conveying pipe 9 to transfer the metal powder 6 inside the carrier tank 4 back to the inside of the heating box 13, and at this time, the ascending spiral conveying pipe 8 is used to heat the metal powder 6. The amount of metal powder 6 entering the supporting groove 4 is equal to the amount of metal powder 6 discharged into the heating box 13 through the descending spiral conveying pipe 9. At this time, the metal powder 6 circulates and heats and releases heat inside the heating box 13 and the supporting groove 4, thereby heating the wafer. Due to the setting of the shape of the supporting groove 4, the supporting groove 4 can carry wafers of different specifications. By controlling the amount of metal powder 6 inside the supporting groove 4, the metal powder 6 can be made to approximately fit the bottom surface of the wafer to perform radiation heating on the metal powder 6. Through the above setting, the device can provide uniform heating for wafers of different diameters, thereby improving the overall processing efficiency of the wafer.
[0025] An upper distance sensor 7 is fixedly connected to the inner wall at the top of the deposition chamber 1; when the wafer is placed inside the supporting slot 4, the position of the wafer in the supporting slot 4 can be obtained by the upper distance sensor 7, and the distance between the bottom surface of the wafer and the bottom surface of the supporting slot 4 can be obtained. A protective plate 19 is fixedly connected to the inner wall at the top of the heating box 13, and a lower distance sensor 20 is fixedly connected to the inner wall of the heating box 13 located inside the protective plate 19.
[0026] Through the above-mentioned setting, the lower distance sensor 20 can obtain the height of the top surface of the metal powder 6 inside the heating box 13, and then calculate the amount of the metal powder 6 inside the heating box 13. By cooperating with the data obtained by the upper distance sensor 7, the lower driving machine 11 and the upper driving machine 12 can cooperate with each other to control the amount of metal powder 6 entering the supporting groove 4.
[0027] The second implementation method:
[0028] Figure 2-3 and Figure 6 A physical vapor deposition heating platform is shown. Different from the first embodiment, a plurality of evenly distributed upper vibrating rods 17 are fixedly connected to the bottom end of the supporting groove 4. The upper vibrating rods 17 are arranged to vibrate the metal powder 6 entering the supporting groove 4, so that the top surface of the metal powder 6 is flat, so that the metal powder 6 can fit well with the bottom surface of the wafer, thereby improving the uniform heating effect of the metal powder 6.
[0029] The inner wall at the bottom end of the heating box 13 is fixedly connected with a plurality of evenly distributed lower vibrating rods 18. The lower vibrating rods 18 can vibrate the metal powder 6 entering the heating box 13, so that the top surface of the metal powder 6 inside the heating box 13 is flat, and the lower distance sensor 20 can obtain the amount of the metal powder 6 inside the heating box 13 more accurately.
[0030] The bottom end of the deposition chamber 1 is fixedly connected to a lifting rod 15, which is located on the inner side of the inner cavity 301. The telescopic end of the lifting rod 15 passes through the heating table 3 between the inner cavity 301 and the supporting groove 4 and extends to the inside of the supporting groove 4. The telescopic end of the lifting rod 15 is fixedly connected to a tray 16, and the telescopic end of the lifting rod 15 is sealed and slidably connected to the penetration point of the heating table 3.
[0031] Through the above arrangement, the lifting rod 15 can drive the tray 16 to move up and down, thereby lifting the wafer to move it out of the carrying slot 4 or into the carrying slot 4.
[0032] An embedded groove 401 is formed on the side wall of the bearing groove 4 , and a buffer layer 10 is fixedly connected to the inner wall of the embedded groove 401 . Through the above arrangement, the buffer layer 10 can protect the edge of the wafer.
[0033] In view of current practical needs, the above-mentioned implementation mode adopted in this application is not limited to the scope of protection. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the scope of protection of the present invention.
Claims
1. A physical vapor deposition heating platform, comprising a deposition chamber (1), characterized in that: The bottom end of the deposition chamber (1) is fixedly connected to a heating chamber (2); the inner wall of the bottom end of the deposition chamber (1) is fixedly connected to a heating platform (3); the bottom end of the heating platform (3) is provided with an inner cavity (301); the top end of the heating platform (3) is provided with a conical bearing groove (4); a lifting spiral conveying pipe (8) is fixedly connected between the bottom end of the bearing groove (4) and the bottom end of the deposition chamber (1); the top end of the lifting spiral conveying pipe (8) extends to the inner side of the bearing groove (4) and is fixedly connected to a discharge pipe (801); the lifting spiral conveying pipe (8) is provided with a discharge pipe (801) and a discharge pipe (802) extending from the top end of the lifting spiral conveying pipe (8) to the discharge pipe (8); The bottom end of the spiral conveying pipe (8) extends to the inner side of the heating chamber (2); the bottom end of the deposition chamber (1) is fixedly connected to a descending spiral conveying pipe (9); the top end of the descending spiral conveying pipe (9) is located on the inner side of the inner cavity (301); the bottom end of the descending spiral conveying pipe (9) extends to the inner side of the heating chamber (2); a reflux pipe (901) is fixedly connected between the top end of the descending spiral conveying pipe (9) and the bearing tank (4); the bottom end of the heating chamber (2) near the ascending spiral conveying pipe (8) and the bottom end of the heating chamber (2) near the descending spiral conveying pipe (9) ) are respectively fixedly connected to a lower driving machine (11) and an upper driving machine (12), the output end of the lower driving machine (11) and the output end of the upper driving machine (12) are respectively fixedly connected to the bottom end of the ascending spiral conveying pipe (8) and the bottom end of the descending spiral conveying pipe (9), the inner wall of the heating chamber (2) is fixedly connected to a heating box (13), the heating box (13) is located between the ascending spiral conveying pipe (8) and the descending spiral conveying pipe (9), the top end of the heating box (13) and the bottom end of the descending spiral conveying pipe (9), and the heating box ( A feeding pipe (5) is fixedly connected between the bottom end of the heating box (13) and the bottom end of the ascending spiral conveying pipe (8), an electric heating pipe (14) is fixedly connected to the inner wall of the bottom end of the heating box (13), the interior of the heating box (13) is filled with metal powder (6), an upper distance sensor (7) is fixedly connected to the inner wall of the top end of the deposition chamber (1), a protective plate (19) is fixedly connected to the inner side wall of the top end of the heating box (13), and a lower distance sensor (20) is fixedly connected to the inner wall of the heating box (13) located inside the protective plate (19); The lower distance sensor (20) can obtain the height of the top surface of the metal powder (6) inside the heating box (13), and then calculate the amount of the metal powder (6) inside the heating box (13). By cooperating with the data obtained by the upper distance sensor (7), the lower driving machine (11) and the upper driving machine (12) can cooperate with each other to control the amount of the metal powder (6) entering the bearing groove (4).
2. A physical vapor deposition heating platform according to claim 1, characterized in that: A plurality of evenly distributed upper vibrating rods (17) are fixedly connected to the bottom end of the bearing groove (4).
3. The physical vapor deposition heating platform according to claim 1, characterized in that: A plurality of evenly distributed lower vibrating rods (18) are fixedly connected to the inner wall of the bottom end of the heating box (13).
4. The physical vapor deposition heating platform according to claim 1, characterized in that: The bottom end of the deposition chamber (1) is fixedly connected to a lifting rod (15), the lifting rod (15) is located on the inner side of the inner cavity (301), the telescopic end of the lifting rod (15) passes through the heating platform (3) between the inner cavity (301) and the bearing groove (4) and extends to the inside of the bearing groove (4), the telescopic end of the lifting rod (15) is fixedly connected to a tray (16), and the telescopic end of the lifting rod (15) is sealed and slidably connected to the penetration point of the heating platform (3).
5. The physical vapor deposition heating platform according to claim 1, characterized in that: An embedded groove (401) is provided on the side wall of the bearing groove (4), and a buffer layer (10) is fixedly connected to the inner wall of the embedded groove (401).