A three-dimensional substrate with dam and manufacturing method thereof

Abstract

The present application discloses a three-dimensional substrate with a dam and a manufacturing method thereof, wherein the method comprises providing a sub-substrate; the sub-substrate comprises a first surface with a circuit layer; laying a first layer of ceramic powder on the first surface and compacting it; spraying a binder to a first preset area of ​​the first layer of ceramic powder so that the ceramic powder in the first preset area is bonded and agglomerated to form a first layer of dam embryo; forming a plurality of layers of dam embryos on the first layer of dam embryos in sequence until the total height of all dam embryos reaches a preset thickness; removing the ceramic powder outside the first preset area of ​​all dam embryos, and solidifying all dam embryos to obtain a three-dimensional substrate with a dam. The present application can be widely used in the field of packaging substrate technology.

Description

Technical Field

[0001] The present application relates to the technical field of packaging substrates, and in particular to a three-dimensional substrate with a dam and a manufacturing method thereof. Background Art

[0002] With the continuous development of electronic packaging technology, power devices are gradually developing towards miniaturization, high power and integration. High-density and high-power electronic devices lead to higher system power density, higher heat generation and increased thermal stress on the package interface. If the heat cannot be dissipated in time, the system temperature will rise sharply, the package interface will also fall off, and the performance and life will be greatly reduced. On the other hand, the increase in heat flow per unit area causes the temperature of the chip to rise sharply. Excessive temperature will reduce chip performance and life, and may even cause chip failure. Therefore, heat dissipation becomes a key factor affecting device performance and reliability. For power electronic devices, the life of the chip will decrease by 30%-50% for every 10°C increase in chip temperature. Therefore, high thermal conductivity packaging materials must be selected to improve device life and reliability and break through performance bottlenecks.

[0003] Electronic packaging materials include packaging substrates, metal leads, sealing materials and interface materials. Among them, the substrate plays a role of mechanical protection and electrical interconnection, and is also an important heat dissipation channel. It plays a vital role. Selecting a suitable packaging substrate can improve the working performance and reliability of electronic products. For power devices, the packaging substrate must have high heat dissipation, strength, corrosion resistance and thermal matching. Ceramic materials have high thermal conductivity, strength, corrosion resistance and low thermal expansion coefficient, which are very suitable as packaging substrates for power devices. At present, common packaging substrates are mainly planar ceramic substrates. However, for some chips that need to be hermetically sealed, such as deep ultraviolet LEDs and crystal oscillators, planar ceramic substrates cannot meet the needs of hermetic packaging, and three-dimensional ceramic substrates with dams are required for packaging.

[0004] In the related art, for the production of three-dimensional ceramic substrates, one method is to use repeated electroplating to prepare a three-dimensional ceramic substrate with a copper-plated dam. However, since this method requires long-term high-speed electroplating, it affects the quality of the circuit layer on the substrate and causes the dam to have a large stress, causing the ceramic substrate to bend. Another method is to use organic glue to directly bond the metal orifice plate to the ceramic substrate, but since the organic glue cannot withstand the temperature of the manufacturing process, the glue leaks out of the substrate during the manufacturing process, reducing the quality of the substrate. Therefore, there are still technical problems that need to be solved in the related art. Summary of the invention

[0005] The purpose of this application is to solve one of the technical problems existing in the prior art to at least a certain extent.

[0006] To this end, an object of an embodiment of the present application is to provide a three-dimensional substrate with a dam and a method for manufacturing the same, which can reduce the stress on the substrate and the dam, thereby reducing the impact on the circuits on the substrate and improving the quality of the substrate.

[0007] In order to achieve the above technical objectives, the technical solution adopted by the embodiment of the present application includes: a method for manufacturing a three-dimensional substrate with a dam, including: providing a sub-substrate; the sub-substrate includes a first surface with a circuit layer; laying a first layer of ceramic powder on the first surface and compacting it; spraying a binder to a first preset area of ​​the first layer of the ceramic powder, so that the ceramic powder in the first preset area is bonded and agglomerated to form a first layer of dam embryo; forming a plurality of layers of dam embryos on the first layer of the dam embryo in sequence until the total height of all dam embryos reaches a preset thickness; wherein, for the i-th layer of dam embryo, the i-th layer of low-temperature ceramic powder is laid on the surface of the i-1 layer of low-temperature ceramic powder and compacted, and then the binder is sprayed to the first preset area of ​​the i-th layer of the ceramic powder, so that the ceramic powder in the first preset area is bonded and agglomerated to form the i-th layer of dam embryo and bonded to the i-1 layer of dam embryo; i is an integer greater than or equal to 2; removing the ceramic powder outside the first preset area of ​​all the dam embryos, and solidifying all the dam embryos to obtain the three-dimensional substrate with a dam.

[0008] The present application can form a first layer of dam embryo body by laying ceramic powder on a surface of a substrate having a circuit layer and spraying a binder to bond the ceramic powder in a first preset area, and then repeat the operation on the first layer of dam embryo body to form a dam composed of several layers of dam embryo bodies, and then dry and remove the ceramic powder outside the first preset area in all dam embryo bodies and solidify to obtain a three-dimensional substrate with a dam. The present application uses a binder to bond the ceramic powder, which can improve the defect of glue overflow during the preparation of the substrate. At the same time, the present application uses a binder and ceramic powder as raw materials to make the dam, which can reduce the stress on the substrate and the dam, thereby reducing the impact on the circuit on the substrate and improving the quality of the substrate.

[0009] In addition, the method for manufacturing a three-dimensional substrate with a dam according to the above embodiment of the present invention may also have the following additional technical features:

[0010] Furthermore, in an embodiment of the present application, the first area is the area between the edge of the circuit board and the edge of the substrate; the distance between the edge of the circuit board and the edge of the first area in a direction parallel to the placement direction of the substrate is L, and L>0.01mm.

[0011] Furthermore, in the embodiment of the present application, the ceramic powder includes any one of metakaolin and fly ash, or a powder of the metakaolin and the fly ash mixed with each other.

[0012] Furthermore, in an embodiment of the present application, curing all of the dam embryos includes: leaving all of the dam embryos to stand at room temperature for a first preset time to solidify all of the dam embryos; the first preset time is recorded as t1, t1≥48h; heating all of the dam embryos at a first preset temperature for a second preset time to solidify all of the dam embryos; the first preset temperature is recorded as T1, 120℃≤T1≤150℃, and the second preset time is recorded as t2, 3h≤t2≤6h.

[0013] Furthermore, in an embodiment of the present application, heating all the dam embryos at a first preset temperature for a second preset time to solidify all the dam embryos includes: heating all the dam embryos at 150°C for 3 hours to solidify all the dam embryos; or, heating all the dam embryos at 120°C for 6 hours to solidify all the dam embryos.

[0014] Furthermore, in the embodiment of the present application, the thickness of the dam embryo body of each layer is denoted as H1, and 0.05mm≤H1≤0.2mm.

[0015] Furthermore, in the embodiment of the present application, the preset thickness is denoted as H, where H≥0.5 mm.

[0016] Furthermore, in an embodiment of the present application, the binder includes any single solution of sodium silicate, potassium silicate, sodium hydroxide and potassium hydroxide, or a mixed solution of any two or more of sodium silicate, potassium silicate, sodium hydroxide and potassium hydroxide.

[0017] Further, in an embodiment of the present application, the sub-substrate is a direct copper-plated ceramic substrate, and the direct copper-plated ceramic substrate is obtained by the following steps:

[0018] The ceramic substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes in sequence to obtain a cleaned ceramic substrate;

[0019] preparing a metal seed layer on the cleaned ceramic substrate;

[0020] Preparing a metal circuit layer on the metal seed layer;

[0021] Increasing the thickness of the metal circuit layer to a preset copper thickness by electroplating;

[0022] Nickel and gold are deposited on the surface of the metal circuit layer and a welding layer is prepared to obtain the direct copper-plated ceramic substrate.

[0023] Furthermore, in the embodiments of the present application, the particle size of the ceramic powder is denoted as R, 0.1 μm≤R≤100 μm.

[0024] On the other hand, the present application also provides a three-dimensional substrate with a dam, which is manufactured by the above-mentioned method for manufacturing a three-dimensional substrate with a dam, and includes a sub-substrate and a dam;

[0025] The sub-substrate comprises a first surface having a circuit layer;

[0026] The dam is disposed on the first surface, and in a direction perpendicular to a placement plane of the sub-substrate, a projection of the circuit layer is located inside a projection contour of the dam.

[0027] The advantages and benefits of the present application will be partially given in the following description, and partially become apparent from the following description, or be understood through the practice of the present application:

[0028] The present application can form a first layer of dam embryo body by laying ceramic powder on a surface of a substrate having a circuit layer and spraying a binder to bond the ceramic powder in a first preset area, and then repeat the operation on the first layer of dam embryo body to form a dam composed of several layers of dam embryo bodies, and finally dry and remove the ceramic powder outside the first preset area in all dam embryo bodies and solidify them to obtain a three-dimensional substrate with a dam. The present application uses a binder to bond the ceramic powder, which can improve the defect of glue overflow during the preparation of the substrate. At the same time, the present application uses a binder to make a dam with ceramic powder as a raw material, which can reduce the stress on the substrate and the dam, thereby reducing the impact on the circuit on the substrate and improving the quality of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a structural schematic diagram of a three-dimensional ceramic substrate in the related art;

[0030] Figure 2 It is a structural schematic diagram of another three-dimensional ceramic substrate in the related art;

[0031] Figure 3 It is a structural schematic diagram of another three-dimensional ceramic substrate in the related art;

[0032] Figure 4 It is a structural schematic diagram of another three-dimensional ceramic substrate in the related art;

[0033] Figure 5 A schematic diagram of the steps of a method for manufacturing a three-dimensional substrate with a dam in a specific embodiment of the present invention;

[0034] Figure 6 A front view of a semi-finished three-dimensional substrate with a dam in a specific embodiment of the present invention;

[0035] Figure 7 A top view of a semi-finished three-dimensional substrate with a dam in a specific embodiment of the present invention;

[0036] Figure 8 A front view of a semi-finished three-dimensional substrate with a dam in another specific embodiment of the present invention;

[0037] Fig. 9 A schematic diagram of the steps of obtaining a direct copper-plated ceramic substrate in a specific embodiment of the present invention;

[0038] Fig.10 is a top view of a three-dimensional substrate with a dam in another specific embodiment of the present invention;

[0039] Fig.11 FIG. 4 is a front view of a three-dimensional substrate with a dam in another specific embodiment of the present invention. DETAILED DESCRIPTION

[0040] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings to explain the principle and process of the three-dimensional substrate with dams and the manufacturing method thereof in the embodiments of the present invention.

[0041] First, the technical defects of the relevant technology are explained:

[0042] With the continuous development of electronic packaging technology, power devices are gradually developing towards miniaturization, high power and integration. High-density and high-power electronic devices lead to higher system power density, higher heat generation and increased thermal stress on the packaging interface. If the heat cannot be dissipated in time, the system temperature will rise sharply, the packaging interface will also fall off, and the performance and life will be greatly reduced. On the other hand, the increase in heat flow per unit area causes the temperature of the chip to rise sharply. Excessive temperature will reduce chip performance and life, and may even cause chip failure. Therefore, heat dissipation becomes a key factor affecting device performance and reliability. For power electronic devices, the life of the chip will decrease by 30%-50% for every 10°C increase in chip temperature. Therefore, high thermal conductivity packaging materials must be selected to improve device life and reliability and break through performance bottlenecks.

[0043] Electronic packaging materials include packaging substrates, metal leads, sealing materials and interface materials. The substrate plays a role in mechanical protection and electrical interconnection, and is also an important heat dissipation channel. It plays a vital role. Selecting a suitable packaging substrate can improve the performance and reliability of electronic products. For power devices, the packaging substrate must have high heat dissipation, strength, corrosion resistance and thermal matching. Ceramic materials have high thermal conductivity, strength, corrosion resistance and low thermal expansion coefficient, which are very suitable as packaging substrates for power devices. At present, common packaging substrates are mainly planar ceramic substrates, that is, a metal layer is prepared on the ceramic surface by different technologies, including direct copper plating ceramic substrates (DPC, such as Figure 1 As shown in the figure), direct thermal bonding ceramic substrate (DBC) and thick film ceramic substrate (TFC), etc. However, for some chips that need to be hermetically sealed, such as deep ultraviolet LED and crystal oscillator chips, planar ceramic substrates cannot meet the requirements of hermetic packaging, and three-dimensional ceramic substrates with dams are required for packaging.

[0044] Currently, the most common dam-containing ceramic substrate technology is the high-temperature / low-temperature co-fired ceramic substrate (HTCC / LTCC). However, this technology uses screen printing to prepare the metal circuit layer, and the pattern accuracy is low, which makes it difficult to meet the needs of high-precision packaging. Many researchers have also proposed other dam-containing three-dimensional ceramic substrate preparation technologies. One method in the related art proposes to use repeated electroplating to prepare a three-dimensional ceramic substrate with a copper-plated dam. However, due to the need for long-term high-speed electroplating, the dam has a large stress, causing the substrate to bend, such as Figure 2 Another method in the related art proposes to use organic glue to directly bond the metal hole plate to the DPC ceramic substrate. However, since the organic glue cannot withstand high temperatures, the glue leaks out of the substrate when the temperature is higher than 150°C, contaminating the metal layer. Figure 3 Another method in the related art proposes to use a mold method to prepare a low-temperature ceramic dam on the surface of a DPC substrate. However, the preparation and alignment of the mold twice results in poor positional accuracy between the dam and the DPC substrate, which is not conducive to subsequent packaging. Figure 4 Therefore, there are still problems in the related art that need to be solved urgently.

[0045] Secondly, in view of the defects of the above-mentioned prior art, refer to Figure 5 , Figure 5 1 is a schematic diagram of the steps of a method for manufacturing a three-dimensional substrate with a dam provided in an embodiment of the present application. Figure 5 In the method for manufacturing a three-dimensional substrate with a dam, the method may include but is not limited to steps S101 to S105.

[0046] S101, providing a sub-substrate, wherein the sub-substrate comprises a first surface having a circuit layer.

[0047] It is understandable that the sub-substrate can be a substrate of any material including a first surface having a circuit layer. The material of the sub-substrate can be a direct copper-plated ceramic substrate, a direct hot-pressed bonding ceramic substrate and a thick film ceramic substrate, a high-temperature co-fired ceramic substrate and a low-temperature co-fired ceramic substrate, or a substrate of other insulating materials such as an epoxy resin substrate. The first surface can be the upper surface or the lower surface in the vertical placement direction of the substrate. Correspondingly, the second surface of the substrate can also be provided with a circuit layer. The second surface can be a surface opposite to the first surface. Exemplarily, the first surface can be the upper surface in the vertical placement direction of the substrate. The second surface can be the lower surface in the vertical placement direction of the substrate. The circuit layer on the second surface can be electrically connected to the circuit layer on the first surface through a conductive copper column or a conductive blind hole embedded in the sub-substrate. In addition, the sub-substrate can also be a substrate with a multi-layer circuit board. There can be multiple layers of different electronic circuit layers on the sub-substrate, and the multiple electronic circuit layers can be electrically connected through conductive copper columns or conductive blind holes.

[0048] Low temperature co-fired ceramic substrate is a substrate formed by low temperature co-fired ceramic technology. Low temperature co-fired ceramic technology is to make low temperature sintered ceramic powder into a green ceramic tape with precise thickness and density, and use it as a circuit substrate material. The required circuit pattern is made on the green ceramic tape by laser drilling, micropore grouting, precision conductor paste printing and other processes, and multiple passive components are buried in it, and then stacked together and sintered at 900℃ to make a passive integrated component of a three-dimensional circuit network. Low temperature sintered ceramic powder can also be made into a three-dimensional circuit substrate with built-in passive components, on the surface of which ICs and active devices can be mounted to make passive / active integrated functional modules.

[0049] High temperature co-fired ceramic substrate is a substrate obtained by high temperature co-fired ceramic technology. High temperature co-fired ceramic technology (HTCC) is to mix ceramic powder with additives such as solvents, binders, dispersants and plasticizers into slurry, and obtain a raw ceramic tape through tape casting technology. Then the raw ceramic tape is cut into fixed-size diaphragms and laser punched. The metals such as tungsten, molybdenum and manganese are used for hole filling and circuit design of each layer by screen printing technology. The green body is then laminated, pressed and cut, and then sintered in a wet nitrogen or hydrogen atmosphere at 1500-1850°C. Finally, vertical interconnection between different layers is achieved on the raw ceramic tape, completing a metal and ceramic connection structure.

[0050] Direct copper (DPC) ceramic substrate is a ceramic substrate used in electronics and electronic packaging, with a layer of copper electroplated directly on the ceramic surface. The direct copper plating process involves applying a thin layer of copper directly to the ceramic material, usually using specific techniques to ensure good adhesion and conductivity. Direct thermal compression bonding ceramic substrate is an advanced material consisting of a ceramic substrate (usually alumina or aluminum nitride) and copper, tightly bonded together through a hypoeutectic process. This unique combination of materials gives the substrate excellent thermal conductivity, low thermal expansion, high strength and excellent wettability, making it suitable for welding applications.

[0051] In some feasible embodiments of the application, the sub-substrate may be a substrate with a single-layer circuit on its surface, and the substrate may be used as a base material for subsequent welding or other processes.

[0052] S102, laying a first layer of ceramic powder on the first surface and compacting it.

[0053] It is understood that the first layer of ceramic powder can completely cover the entire first surface. After the first layer of ceramic powder is laid, the first layer of ceramic powder can be squeezed from above the substrate by physical extrusion until the first layer of ceramic powder can no longer be squeezed, at which point the first layer of ceramic powder is compacted. The laying of the first layer of ceramic powder can be achieved by a machine.

[0054] S103, spraying a binder to a first preset area of ​​the first layer of ceramic powder, so that the ceramic powder in the first preset area is bonded and agglomerated to form a first layer of dam embryo body.

[0055] It can be understood that the first preset area can be the edge area of ​​the first layer of the dam embryo, and the projection of the first area in the placement direction of the sub-substrate can partially overlap with the area between the edge of the circuit layer on the sub-substrate and the edge of the sub-substrate. There is a certain distance between the edge of the first area and the edge of the circuit layer on the sub-substrate, and the distance can be determined by the designer according to needs.

[0056] In some feasible embodiments of the present application, relevant personnel use equipment to spray the binder to the first preset area of ​​the first layer of ceramic powder, and the binder diffuses in the first layer of ceramic powder. After diffusion, the binder allows the ceramic powder in the first preset area to bond and agglomerate to form a layer of dam embryo.

[0057] S104, forming a plurality of layers of dam embryo bodies on the first layer of dam embryo bodies in sequence until the total height of all dam embryo bodies reaches a preset thickness.

[0058] It can be understood that, for the i-th layer dam embryo, the i-th layer of low-temperature ceramic powder is laid on the surface of the i-1 layer of low-temperature ceramic powder and compacted, and then the binder is sprayed onto the first preset area of ​​the i-th layer of ceramic powder to make the ceramic powder in the first preset area bonded and agglomerated to form the i-th layer dam embryo and bonded to the i-1 layer dam embryo; i is an integer greater than or equal to 2.

[0059] Exemplarily, when the number of layers i of the dam embryo is 3, a second layer of dam embryo is first formed on the first layer of dam embryo. The second layer of dam embryo can be formed by laying a second layer of ceramic powder on the surface of the first layer of low-temperature ceramic powder and compacting it, and then spraying a binder to a first preset area of ​​the second layer of ceramic powder to make the ceramic powder in the first preset area bonded and agglomerated to form a second layer of dam embryo and bonded to the first layer of dam embryo. For the third layer of dam embryo, a third layer of low-temperature ceramic powder is laid on the surface of the second layer of low-temperature ceramic powder and compacted, and then spraying a binder to the first preset area of ​​the third layer of ceramic powder to make the ceramic powder in the first preset area bonded and agglomerated to form a third layer of dam embryo and bonded to the second layer of dam embryo.

[0060] Exemplarily, when the number of layers i of the dam body is 4, the second layer of the dam body and the third layer of the dam body are first formed in sequence on the first layer of the dam body. The second layer of the dam body and the third layer of the dam body can be obtained according to the above embodiment. For the fourth layer of the dam body, the fourth layer of low-temperature ceramic powder is laid on the surface of the third layer of low-temperature ceramic powder and compacted, and then the binder is sprayed onto the first preset area of ​​the fourth layer of ceramic powder to make the ceramic powder in the first preset area bonded and agglomerated to form the fourth layer of the dam body and bonded to the third layer of the dam body.

[0061] Exemplarily, when the number of layers i of the dam embryo is 5, the second to fourth layers of dam embryos are first formed in sequence on the first layer of dam embryo. The second to fourth layers of dam embryos can be obtained by the method of the above embodiment. For the fifth layer of dam embryo, the fifth layer of ceramic powder is laid on the surface of the fourth layer of low-temperature ceramic powder and compacted, and then the binder is sprayed onto the first preset area of ​​the fifth layer of ceramic powder to make the ceramic powder in the first preset area bonded and agglomerated to form the fifth layer of dam embryo and bonded to the fourth layer of dam embryo.

[0062] Exemplarily, when the number of layers i of the dam embryo is 6, the second to fifth layers of dam embryos are first formed in sequence on the first layer of dam embryo. The second to fifth layers of dam embryos can be obtained by the method of the above embodiment. For the sixth layer of dam embryo, the sixth layer of ceramic powder is laid on the surface of the fifth layer of low-temperature ceramic powder and compacted, and then the binder is sprayed onto the first preset area of ​​the sixth layer of ceramic powder to make the ceramic powder in the first preset area bonded and agglomerated to form the sixth layer of dam embryo and bonded to the fifth layer of dam embryo.

[0063] S105, drying all the dam embryos and removing the ceramic powder outside the first preset area in all the dam embryos, and solidifying all the dam embryos to obtain a three-dimensional substrate with dams.

[0064] In some feasible embodiments of the present application, the dam embryo can be dried before removing all ceramic powders outside the first preset area in the dam embryo. After drying, the dam embryo can be removed by inert gas or other gases that do not react with the binder and the ceramic powder, such as nitrogen. After removing the ceramic powders outside the first preset area, the ceramic powders bonded and agglomerated in the first preset area can be solidified into a dam with a certain rigidity. Curing can be achieved by standing at room temperature for a certain period of time, or at a certain temperature greater than room temperature. It is understandable that when the curing process is achieved by standing for a certain period of time, the time required for standing is greater than the curing time at a temperature greater than room temperature. After completing the dam, the present embodiment can obtain a final three-dimensional substrate. Exemplarily, referring to Figure 6 as well as Figure 7 ,exist Figure 6 as well as Figure 7 The first preset area is R. Figure 6 In the figure, there are 5 layers of dam embryos on the substrate in the R region. Figure 7 The middle R is arranged around the outer side of the circuit layer E on the substrate. Figure 6 as well as Figure 7 The dam embryo body in the first area has been solidified. After drying all the dam embryo bodies, in this embodiment, argon gas with a certain flow rate can be introduced into the sealing device of the substrate with the multi-layer dam embryo body placed. The argon gas with a certain flow rate can remove the ceramic powder that is not bonded and agglomerated outside the first preset area in all the dam embryo bodies. After removing the ceramic powder that is not bonded and agglomerated, this embodiment can obtain a three-dimensional substrate with a dam. The dam of the three-dimensional substrate is composed of the remaining dam embryo bodies in the first preset area, and the dam can surround the circuit layer on the surface of the substrate.

[0065] In summary, in this embodiment, ceramic powder can be laid on a surface of a substrate having a circuit layer and a binder can be sprayed to bond the ceramic powder in the first preset area to form a first layer of dam embryos, and then the operation can be repeated on the first layer of dam embryos to form a dam composed of several layers of dam embryos, and finally the ceramic powder outside the first preset area in all dam embryos can be dried and removed and solidified to obtain a three-dimensional substrate with a dam. The present application uses a binder to bond the ceramic powder, which can improve the defect of glue overflow during the preparation of the substrate. At the same time, the present application uses a binder to make a dam with ceramic powder as a raw material, which can reduce the stress on the substrate and the dam, thereby reducing the impact on the circuit on the substrate and improving the quality of the substrate.

[0066] Further, in some feasible embodiments of the present application, the first region may be a region between an edge of the circuit board and an edge of the substrate. The edge of the first region may coincide with the edge of the substrate. The distance between the edge of the circuit board and the edge of the first region in a direction parallel to the substrate placement direction is L, L>0.01mm. For example, referring to Figure 8 ,exist Figure 8 In the example, the Y region is the first region, from Figure 8 It can be seen that there is a certain distance L between the edge of Y and the edge of the circuit layer 111. In order to allow a certain buffer space between the dam and the circuit layer 111, L is set to be greater than 0.01 mm. The specific value of L can be determined by the designer according to the actual process.

[0067] Furthermore, in some feasible embodiments of the present application, the step of solidifying all dam embryos may include but is not limited to step S201 - step S202.

[0068] S201, leaving all the dam embryos at room temperature for a first preset time to solidify all the dam embryos; the first preset time is t1, t1≥48h.

[0069] S202, heating all the dam embryos at a first preset temperature for a second preset time to solidify all the dam embryos; the first preset temperature is T1, 120°C≤T1≤150°C, and the second preset time is t2, 3h≤t2≤6h.

[0070] It can be understood that the curing of all dam embryos can be carried out at room temperature or in the temperature range of 120°C to 150°C. The curing time can be adjusted according to different temperature conditions. Exemplarily, in this embodiment, all dam embryos can be left to stand at room temperature for a first preset time to cure all dam embryos; the first preset time is t1, and t1 can be greater than 48 hours. In this embodiment, all dam embryos can also be heated at a temperature of 120°C to 150°C for 3 hours to 6 hours to cure all dam embryos. The first preset temperature is T1, 120°C≤T1≤150°C, and the second preset time is t2, 3h≤t2≤6h.

[0071] Furthermore, in some feasible embodiments of the present application, the step of heating all the dam embryos at the first preset temperature for the second preset time to solidify all the dam embryos may include but is not limited to step S301 or step S302.

[0072] S301, heating all the dam embryos at 150°C for 3 hours to solidify all the dam embryos.

[0073] or,

[0074] S302, heating all the dam embryos at 120°C for 6 hours to solidify all the dam embryos.

[0075] For example, in this embodiment, at a temperature of 120° C., the curing time of all dam embryos can be 6 hours or more. At a temperature of 150° C., since the temperature is higher than 120° C., the curing time of all dam embryos can be 3 hours or more. During the curing process, in all dam embryos, each layer of embryos will only form a cured dam in the first area. No cured dam will be formed at other positions of the embryo without the sprayed adhesive.

[0076] Further, in some feasible embodiments of the present application, the dam may include several layers of dam embryos. The thickness of each layer of the dam embryo is H1, 0.05mm≤H1≤0.2mm. It can be understood that the thickness of each layer of the dam embryo can be any thickness between 0.05mm and 0.2mm, that is, the thickness of each layer of the dam embryo can be the same or different.

[0077] Further, in some feasible embodiments of the present application, the preset thickness of the dam of the present embodiment is H, where H≥0.5 mm. Exemplarily, a dam with a height greater than 0.5 mm can meet actual functional requirements.

[0078] Furthermore, in some feasible embodiments of the present application, the ceramic powder may include any one of metakaolin and fly ash, or a mixture of metakaolin and fly ash.

[0079] Further, in some feasible embodiments of the present application, the binder of the present embodiment may include a single solution or a mixed solution of sodium silicate, potassium silicate, sodium hydroxide and potassium hydroxide. Exemplarily, the binder may be a sodium silicate solution, a potassium silicate solution, a potassium hydroxide solution, a sodium hydroxide solution, a mixed solution of any two solutions, a mixed solution of any three solutions, or a mixed solution of all four solutions.

[0080] Further, in some feasible embodiments of the present application, the sub-substrate may be a directly copper-plated ceramic substrate. Fig. 9 , a directly copper plated ceramic substrate is obtained through steps S401 to S405.

[0081] S401, ultrasonically clean the ceramic substrate with acetone, ethanol and deionized water for 5 minutes in sequence to obtain a cleaned ceramic substrate.

[0082] S402, preparing a metal seed layer on the cleaned ceramic substrate.

[0083] S403, preparing a metal circuit layer on the metal seed layer.

[0084] S404, increasing the thickness of the metal circuit layer to a preset copper thickness by electroplating.

[0085] S405, depositing nickel and gold on the surface of the metal circuit layer and preparing a welding layer to obtain a direct copper-plated ceramic substrate.

[0086] For example, in an embodiment of the present application, the ceramic substrate can be ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes in sequence to obtain a cleaned ceramic substrate. Acetone and ethanol can remove organic impurities, and deionized water can remove inorganic impurities and the above-mentioned excess acetone and ethanol. There are no organic or inorganic impurities on the surface of the cleaned ceramic substrate, or there are very few impurities, which can reduce the by-products of subsequent processes and improve the quality of the finished substrate. After obtaining the cleaned ceramic substrate, the present embodiment can make a metal seed layer on the ceramic substrate by existing technologies such as chemical vapor deposition, electroplating or vacuum coating. The metal seed layer can be used for subsequent circuit layer preparation. After forming the metal seed layer, the present embodiment can cover the metal seed layer with a photosensitive resin, and then expose and develop the metal seed layer to obtain a corresponding circuit layer image, and then etch the circuit layer image to obtain a metal circuit layer. After obtaining the metal circuit layer, the present embodiment can increase the local thickness of the metal circuit layer or the overall thickness of the circuit layer to a preset copper thickness through an electroplating process. The preset copper thickness can be determined according to the setting requirements. The preset copper thickness can meet specific design requirements. The increase in overall thickness can improve the circuit parameters such as the withstand voltage of the circuit, the maximum current that the circuit can pass, and other electrical parameters. After obtaining the circuit layer with increased thickness, the present embodiment can deposit nickel and gold materials on the metal circuit layer. The circuit layer after the deposition of nickel and gold materials can have better welding performance. Since the tin wire required for welding is usually a nickel-tin alloy, the circuit layer after the deposition of nickel and gold materials can be attached with nickel-tin alloy, which can improve the quality of the welding process. After depositing the nickel and gold materials, it is also necessary to prepare a welding layer at a local position of the substrate. The welding layer can be used to weld external devices such as small chips and some external passive devices. After preparing the welding layer, the present embodiment can obtain the final direct copper-plated ceramic substrate, which is the sub-substrate of the present application.

[0087] In addition, in some embodiments of the present application, the number of circuit board layers of the sub-substrate can be two. The two-layer circuit board can be electrically connected through conductive blind holes or conductive copper pillars embedded in the substrate. The sub-substrate with two layers of circuit boards can be obtained through steps S411-S418.

[0088] S411, ultrasonically clean the ceramic substrate with acetone, ethanol and deionized water for 5 minutes in sequence to obtain a cleaned ceramic substrate.

[0089] S412, preparing a metal seed layer on the first surface of the cleaned ceramic substrate.

[0090] S413, preparing a first metal circuit layer on the metal seed layer.

[0091] S414, preparing a second metal seed layer on the second surface of the cleaned ceramic substrate.

[0092] S415, forming a through hole by a drilling process and forming a conductive blind hole on the through hole.

[0093] S416, preparing a second metal circuit layer on the metal seed layer.

[0094] S417, increasing the thickness of the first metal circuit layer to a second preset copper thickness and the thickness of the second metal circuit layer to a third preset copper thickness by electroplating.

[0095] S418, depositing nickel and gold on the surface of the metal circuit layer and preparing a welding layer to obtain a directly copper-plated ceramic substrate.

[0096] It can be understood that the first surface is the upper surface on which the substrate is placed, and the second surface is the lower surface opposite to the upper surface on which the substrate is placed. Correspondingly, the first metal seed layer can be a seed layer formed on the upper surface on which the substrate is placed. The second metal seed layer is a seed layer formed on the lower surface on which the substrate is placed. The second preset copper thickness and the third preset copper thickness can be determined according to the designer's needs.

[0097] For example, in an embodiment of the present application, the ceramic substrate can be ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes in sequence to obtain a cleaned ceramic substrate. Acetone and ethanol can remove organic impurities, and deionized water can remove inorganic impurities and the above-mentioned excess acetone and ethanol. There are no organic or inorganic impurities on the surface of the cleaned ceramic substrate, or there are very few impurities, which can reduce the by-products of subsequent processes and improve the quality of the finished substrate. After obtaining the cleaned ceramic substrate, the present embodiment can form a first metal seed layer on one surface of the ceramic substrate and form a second metal seed layer on another surface by existing technologies such as chemical vapor deposition, electroplating or vacuum coating. The first metal seed layer and the second metal seed layer can be used for subsequent circuit layer preparation. After forming the first metal seed layer and the second metal seed layer, a through hole can be formed by a drilling process and a conductive blind hole can be formed on the through hole by an electroplating process. The conductive blind hole can connect the first metal seed layer and the second metal seed layer. After obtaining the metal seed layer, a corresponding circuit layer can be formed on the metal seed layer.

[0098] It can be understood that, in this embodiment, a photosensitive resin can be covered on the first metal seed layer, and then the first metal seed layer is exposed and developed to obtain a corresponding circuit layer image, and then the circuit layer image is etched to obtain a first metal circuit layer. Similarly, in this embodiment, a photosensitive resin can be covered on the second metal seed layer, and then the second metal seed layer is exposed and developed to obtain a corresponding circuit layer image, and then the circuit layer image is etched to obtain a second metal circuit layer. After obtaining two layers of interconnected metal circuit layers, in this embodiment, the local thickness of the metal circuit layer or the overall thickness of the circuit layer can be increased by an electroplating process to meet specific design requirements. The overall increase in thickness can improve the circuit parameters such as the withstand voltage of the circuit, the maximum current that the circuit can pass, and other electrical parameters. After obtaining the circuit layer with increased thickness, in this embodiment, nickel and gold materials can be deposited on the metal circuit layer. The circuit layer after the deposition of nickel and gold materials can have better welding performance. Since the tin wire required for welding is usually a nickel-tin alloy, the circuit layer after the deposition of nickel and gold materials can adhere to the nickel-tin alloy, which can improve the quality of the welding process. After depositing the nickel and gold materials, a welding layer needs to be prepared on a local position of the substrate, and the welding layer can be used to weld external devices such as small chips and some external passive devices. After preparing the welding layer, the embodiment can obtain the final direct copper-plated ceramic substrate, that is, the sub-substrate of the present application.

[0099] It is understandable that the above etching process can be positive etching or negative etching, and the positive etching or negative etching can be determined according to the process such as the type of photosensitive resin and the thickness of the metal seed layer. The etching liquid can be an acidic etching liquid that can react with the metal circuit layer, and the remaining photosensitive resin can be removed by an alkaline etching liquid, and the alkaline etching liquid can remove the aforementioned excess acidic etching liquid. The above electroplating can use a solution containing copper ions. The above acidic etching liquid can use ferric chloride, and the above alkaline etching liquid can use sodium hydroxide, etc.

[0100] Further, in some feasible embodiments of the present application, the particle size of the ceramic powder is R. 0.1 μm ≤ R ≤ 100 μm. Exemplarily, the ceramic powder with a particle size of 0.1 μm ≤ R ≤ 100 μm can allow the binder to quickly penetrate into each ceramic powder, accelerating the agglomeration and bonding of the ceramic powder.

[0101] The specific implementation principle of this application is described below with reference to the accompanying drawings:

[0102] In some embodiments of the present application, the substrate is a direct copper-plated ceramic substrate, that is, a DPC ceramic substrate, and the ceramic powder is a metakaolin powder. The thickness of each layer of ceramic powder is 0.1 mm, the particle size of the ceramic powder is 20 μm, the powder particle size distribution is 5 μm-60 μm, the binder is a 20 mol / L sodium hydroxide solution, the number of layers of the dam embryo is 6 layers, the curing condition is heated at 120°C for 6 hours, and the ceramic dam is prepared by spraying the adhesive using 3D printing technology.

[0103] The specific implementation process includes steps 11) to 18).

[0104] 11) Aluminum oxide direct copper-plated ceramic substrate is prepared by sputtering, photolithography, development, electroplating and surface deposition processes.

[0105] 12) The kaolin powder is spread evenly on the surface of the direct copper-plated ceramic substrate and compacted with a roller to form a first printing layer. The thickness of each printing layer is 0.1 mm, the particle size of the kaolin powder is 20 μm, and the particle size distribution of the kaolin powder is 5 μm-60 μm.

[0106] 13) Spray 20 mol / L sodium hydroxide solution to the designated position of the first printing layer to agglomerate and pre-solidify the kaolin powder to form the first layer of the dam embryo.

[0107] 14) Continue to lay kaolin powder on the surface of the first printing layer and compact it to form the second printing layer.

[0108] 15) Spray 20 mol / L sodium hydroxide solution to the designated position of the second printing layer to agglomerate and pre-solidify the powder to form a second layer of dam embryo, which is bonded to the first layer of dam embryo.

[0109] 16) Repeat the printing for 6 times to form a ceramic dam embryo.

[0110] 17) The metakaolin powder attached to the ceramic substrate was then blown off with nitrogen gas.

[0111] 18) The ceramic substrate containing the dam embryo is placed in an oven at 120° C. and heated for 6 hours to complete the preparation of the three-dimensional ceramic substrate containing the ceramic dam.

[0112] In other embodiments of the present application, the structure is the same as the above embodiment. The three-dimensional ceramic substrate containing ceramic dams in this embodiment includes a DPC ceramic substrate and a ceramic dam. The difference is that the ceramic powder in this embodiment is fly ash, the powder particle size is 30 μm, the particle size distribution is 10 μm-100 μm, the thickness of each layer of the dam embryo is 0.15 mm, the number of layers of the dam embryo is 5, and the adhesive is a 15 mol / l potassium hydroxide solution. The curing condition of the dam embryo is 150°. The curing time of the dam embryo is 3 hours.

[0113] The specific implementation process includes step 21) to step 28).

[0114] 21) Alumina direct copper-plated ceramic substrate is prepared by sputtering, photolithography, development, electroplating and surface deposition.

[0115] 22) Spread the fly ash powder onto the surface of the direct copper-plated ceramic substrate and compact it with a roller to form the first printing layer. The thickness of each printing layer is 0.15 mm, the particle size of the fly ash powder is 30 μm, and the fly ash particle size distribution is 10 μm-100 μm.

[0116] 23) Spray 15 mol / l potassium hydroxide solution to the designated position of the first printing layer to agglomerate and pre-solidify the fly ash powder to form the first layer of the dam embryo.

[0117] 24) Continue to lay fly ash powder on the surface of the first printing layer and compact it to form the second printing layer.

[0118] 25) Spray 15 mol / l potassium hydroxide solution to the designated position of the second printing layer to agglomerate and pre-solidify the fly ash powder to form the second layer of the dam embryo, and bond it to the first layer of the dam embryo.

[0119] 26) Repeat the printing for 5 times to form a ceramic dam embryo.

[0120] 27) The fly ash powder attached to the ceramic substrate is then blown off with nitrogen gas.

[0121] 28) The ceramic substrate containing the dam embryo is placed in an oven at 150° C. and heated for 3 hours to complete the preparation of the three-dimensional ceramic substrate containing the ceramic dam.

[0122] In other embodiments of the present application, the structure is the same as that of the above embodiment. The three-dimensional ceramic substrate containing ceramic dams in this embodiment includes a DPC ceramic substrate and a ceramic dam. The difference is that the ceramic powder in this embodiment is a mixture of fly ash and metakaolin, the powder particle size is 40 μm, the particle size distribution is 30 μm-100 μm, the thickness of each layer of the dam embryo is 0.2 mm, the number of layers of the dam embryo is 4 layers, and the adhesive is a 2.4 mol / l sodium silicate solution. The curing condition of the dam embryo is to stand at room temperature for 48 hours.

[0123] The specific implementation process includes step 31) to step 38).

[0124] 31) Alumina direct copper-plated ceramic substrate is prepared by sputtering, photolithography, development, electroplating and surface deposition.

[0125] 32) Spread the mixture of fly ash and kaolin on the surface of the direct copper-plated ceramic substrate and compact it with a roller to form a first printing layer. The thickness of each printing layer is 0.2 mm, the particle size of the fly ash and kaolin powder is 40 μm, and the particle size distribution of the fly ash and kaolin is 30 μm-100 μm.

[0126] 33) Spray 2.4 mol / l sodium silicate solution to the designated position of the first printing layer to agglomerate and pre-solidify the fly ash and kaolin powder to form the first layer of the dam embryo.

[0127] 34) Continue to lay a mixture of fly ash and kaolin on the surface of the first printing layer and compact it to form a second printing layer.

[0128] 35) Spray 2.4 mol / l sodium silicate solution to the designated position of the second printing layer to agglomerate and pre-solidify the fly ash and kaolin powder to form the second layer of the dam embryo, and bond it to the first layer of the dam embryo.

[0129] 36) Repeat printing 4 times to form a ceramic dam embryo.

[0130] 37) The fly ash and metakaolin powder attached to the ceramic substrate are then blown off with nitrogen gas.

[0131] 38) The ceramic substrate containing the dam embryo is placed at room temperature and allowed to stand for 48 hours to complete the preparation of the three-dimensional ceramic substrate containing the ceramic dam.

[0132] In summary, the method for manufacturing a three-dimensional substrate with a dam of the present application has the following advantages:

[0133] This application uses DPC technology to prepare a planar ceramic substrate, which can improve the accuracy of the metal circuit layer. This application uses adhesive jet 3D printing technology to prepare a ceramic dam structure, which improves the molding accuracy and position accuracy of the dam. At the same time, using low-temperature ceramic powder with a curing temperature below 150°C as a dam material can reduce the thermal stress received by the substrate during the preparation process, reduce the warping of the substrate, and improve the reliability and airtightness of the three-dimensional ceramic substrate.

[0134] In addition, refer to Fig.10 and Fig.11 ,and Figure 1 Corresponding to the method, the embodiment of the present application also provides a three-dimensional substrate with a dam. The three-dimensional substrate may include a sub-substrate 1001 and a dam 1002. Fig.10 It can be seen that the sub-substrate 1001 includes a circuit layer 1011, and the circuit layer 1011 may include a dam 1002 with a certain width around it. Fig.10 From the top view, it can be seen that the dam 1002 can be arranged around the periphery of the circuit layer 1011. Fig.11 It can be seen that the dam can include five dam embryos 1012. The three dam embryos 1012 can be sequentially formed on the surface of the side of the word substrate 1001 having the circuit layer 1012 by the above-mentioned preparation method. Fig.10 and Fig.11 It can also be known from both the top view angle and the front view angle of the substrate placement that the distance between the edge of the circuit layer 1011 and one side edge of the dam 1002 is G, and the other side edge of the dam 1002 coincides with the projection of the edge of the sub-substrate 1001 in the placement direction of the sub-substrate 1001. In other words, the projection of the circuit layer 1011 on the sub-substrate 1001 in the placement direction of the sub-substrate 1001 is located inside the contour of the projection of the dam 1002 in the placement direction of the sub-substrate 1001. In addition, from Fig.11 It can be known from the figure that the thickness of each layer of the dam embryo 1012 may be different.

[0135] It should be noted that the contents of the above-mentioned embodiment of the method for manufacturing a three-dimensional substrate with a dam are applicable to the present embodiment of the three-dimensional substrate with a dam, and the functions specifically implemented by the present embodiment of the three-dimensional substrate with a dam are the same as those of the above-mentioned embodiment of the method for manufacturing a three-dimensional substrate with a dam, and the beneficial effects achieved are also the same as those achieved by the above-mentioned embodiment of the method for manufacturing a three-dimensional substrate with a dam.

[0136] Furthermore, in some feasible embodiments of the present application, the height of the dam 1002 is not less than 0.5 cm. The dam at this height can protect the circuit layer 1011 from being damaged in the subsequent process.

[0137] Further, in some feasible embodiments of the present application, the dam of the present embodiment may be provided in the first region. The first region may be the region between the edge of the circuit board and the edge of the substrate. The edge of the first region may coincide with the edge of the substrate. The distance between the edge of the circuit board and the edge of the first region in the direction parallel to the placement direction of the substrate is L, and L>0.01 mm.

[0138] In some optional embodiments, the function / operation mentioned in the block diagram may not occur in the order mentioned in the operation diagram. For example, depending on the function / operation involved, the two boxes shown in succession can actually be executed substantially simultaneously or the boxes can sometimes be executed in reverse order. In addition, the embodiment presented and described in the flow chart of the application is provided by way of example, for the purpose of providing a more comprehensive understanding of technology. The disclosed method is not limited to the operation and logic flow presented herein. Optional embodiments are expected, wherein the order of various operations is changed and the sub-operation described as a part of a larger operation is performed independently.

[0139] In the above description of this specification, the description with reference to the terms "one embodiment / example", "another embodiment / example" or "certain embodiments / examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0140] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the claims and their equivalents.

[0141] The above is a specific description of the preferred implementation of the present application, but the present application is not limited to the described embodiments. Technical personnel familiar with the field may make various equivalent modifications or substitutions without violating the spirit of the present application. These equivalent modifications or substitutions are all included in the scope defined by the claims of the present application.

Claims

1. A method for manufacturing a three-dimensional substrate with a dam, characterized in that: The following steps are involved: Providing a sub-substrate; the sub-substrate comprises a first surface having a circuit layer; Laying a first layer of ceramic powder on the first surface and compacting it; Spraying a binder onto a first preset area of ​​the first layer of ceramic powder, so that the ceramic powder in the first preset area is bonded and agglomerated to form a first layer of dam embryo body; A plurality of layers of dam embryo bodies are sequentially formed on the first layer of dam embryo bodies until the total height of all dam embryo bodies reaches a preset thickness; wherein, for the i-th layer of dam embryo body, the i-th layer of ceramic powder is laid on the surface of the i-1 layer of low-temperature ceramic powder and compacted, and then a binder is sprayed onto a first preset area of ​​the i-th layer of ceramic powder, so that the ceramic powder in the first preset area is bonded and agglomerated to form the i-th layer of dam embryo body and bonded to the i-1 layer of dam embryo body; i is an integer greater than or equal to 2; The ceramic powder outside the first preset area in all the dam embryos is removed, and all the dam embryos are solidified to obtain the three-dimensional substrate with the dam.

2. The method for manufacturing a three-dimensional substrate with a dam according to claim 1, characterized in that: The ceramic powder includes any one of metakaolin and fly ash, or a powder of the metakaolin and the fly ash mixed with each other.

3. The method for manufacturing a three-dimensional substrate with a dam according to claim 1, characterized in that: The step of solidifying all the dam embryos comprises: All the dam embryos are left standing at room temperature for a first preset time to solidify the dam embryos; the first preset time is t1, t1≥48h; All the dam embryos are heated at a first preset temperature for a second preset time to solidify the dam embryos; the first preset temperature is T1, 120°C≤T1≤150°C, and the second preset time is t2, 3h≤t2≤6h.

4. The method for manufacturing a three-dimensional substrate with a dam according to claim 3, characterized in that: The step of heating all the dam embryos at a first preset temperature for a second preset time to solidify all the dam embryos comprises: heating all the dam embryos at 150° C. for 3 hours to solidify all the dam embryos; or, All the dam embryo bodies were heated at 120° C. for 6 hours to solidify all the dam embryo bodies.

5. The method for manufacturing a three-dimensional substrate with a dam according to claim 1, characterized in that: The thickness of each layer of the dam embryo is H1, 0.05mm≤H1≤0.2mm.

6. The method for manufacturing a three-dimensional substrate with a dam according to claim 1, characterized in that: The preset thickness is H, where H≥0.5 mm.

7. The method for manufacturing a three-dimensional substrate with a dam according to claim 1, characterized in that: The binder includes any single solution of sodium silicate, potassium silicate, sodium hydroxide and potassium hydroxide, or a mixed solution of any two or more of sodium silicate, potassium silicate, sodium hydroxide and potassium hydroxide.

8. The method for manufacturing a three-dimensional substrate with a dam according to claim 1, characterized in that: The sub-substrate is a direct copper-plated ceramic substrate, and the direct copper-plated ceramic substrate is obtained by the following steps: The ceramic substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes in sequence to obtain a cleaned ceramic substrate; preparing a metal seed layer on the cleaned ceramic substrate; Preparing a metal circuit layer on the metal seed layer; Increasing the thickness of the metal circuit layer to a preset copper thickness by electroplating; Nickel and gold are deposited on the surface of the metal circuit layer and a welding layer is prepared to obtain the direct copper-plated ceramic substrate.

9. The method for manufacturing a three-dimensional substrate with a dam according to claim 1, characterized in that: The particle size of the ceramic powder is denoted as R, 0.1 μm≤R≤100 μm.

10. A three-dimensional substrate with a dam, characterized in that: The three-dimensional substrate is manufactured by the method for manufacturing a three-dimensional substrate with a dam according to any one of claims 1 to 9, wherein the three-dimensional substrate comprises a sub-substrate and a dam; The sub-substrate comprises a first surface having a circuit layer; The dam is arranged on the first surface; in a direction perpendicular to a placement plane of the sub-substrate, a projection of the circuit layer is located inside a projection outline of the dam.

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