Silver-aluminum etching liquid composition

Abstract

The present invention provides a silver-aluminum etching liquid composition, and relates to the technical field of etching liquids. The silver-aluminum etching liquid composition is composed of an inorganic acid, a weak organic acid, an inorganic base, potassium dioxalate cuprate, a silver ion complexing agent, mannitol, a polyether diol, 4-formylphenylboric acid and water, wherein the silver ion complexing agent is prepared by mixing ammonium citrate and ammonium ethylenediaminetetraacetate, and the etching liquid performs immersion etching on a silver film and an aluminum film. The present invention overcomes the deficiencies of the prior art, and the etching liquid can improve the etching selectivity and precision of aluminum and silver, and effectively prolong the service life of the etching liquid, and reduce the generation of waste liquid.

Description

Technical Field

[0001] The invention relates to the technical field of etching solutions, and in particular to a silver-aluminum etching solution composition. Background Art

[0002] In the manufacturing process of TFT (thin film transistor) panels, etching technology is a crucial process step used to accurately remove non-essential parts of the material surface to form the required circuit patterns and structures. With the continuous advancement of display technology and the diversification of consumer demand, higher requirements are placed on the resolution, color expression and production efficiency of TFT panels. In this context, aluminum silver etching solution, as a key material in wet etching technology, has a direct impact on the manufacturing quality and production efficiency of the panel.

[0003] Traditional aluminum-silver etching solutions are mostly based on mixed acid systems such as nitric acid and acetic acid. These systems can effectively remove materials on the surfaces of aluminum and silver during the etching process, but they have many limitations in practical applications. First, due to the differences in the chemical properties of aluminum and silver, traditional etching solutions are prone to problems such as poor selectivity, over-etching or under-etching during the etching process, resulting in rough edges and insufficient precision of the etched lines. Secondly, traditional etching solutions have a short service life and need to be replaced frequently, which increases production costs and environmental pollution risks. In addition, the waste liquid generated by traditional etching solutions during the etching process is difficult to treat, which is not in line with the development trend of green manufacturing. Summary of the invention

[0004] In view of the shortcomings of the prior art, the present invention provides a silver-aluminum etching liquid composition, which can improve the etching selectivity and accuracy of aluminum and silver, effectively prolong the service life of the etching liquid, and reduce the generation of waste liquid.

[0005] To achieve the above objectives, the technical solution of the present invention is implemented through the following technical solutions:

[0006] A silver-aluminum etching liquid composition is composed of the following raw materials in percentage by mass: 60.5%-65.5% of inorganic acid, 5.4%-5.9% of weak organic acid, 5.8%-6.7% of inorganic base, 1.2%-1.4% of potassium dioxalate cuprate, 1.5%-1.8% of silver ion complexing agent, 1.0%-1.4% of mannitol, 1.6%-1.8% of polyether diol, 1.0%-1.2% of 4-formylphenylboric acid, and the rest is water.

[0007] Preferably, the inorganic acid is a mixture of phosphoric acid and nitric acid in a mass ratio of 5-5.4:1.05-1.15.

[0008] Preferably, the weak organic acid is any one or more combinations of citric acid, salicylic acid, tartaric acid, lactic acid and acetic acid.

[0009] Preferably, the inorganic base is any one or more combinations of sodium hydroxide, potassium hydroxide, potassium carbonate, sodium bicarbonate and potassium bicarbonate.

[0010] Preferably, the silver ion complexing agent is a mixture of ammonium citrate and ammonium ethylenediaminetetraacetate in a mass ratio of 1-1.2:0.3-0.6.

[0011] Preferably, the etching solution composition is used for etching silver film and aluminum film, including a laminated film of an aluminum film and a Mo layer, and a laminated film of a silver film and an ITO layer.

[0012] Preferably, the silver-aluminum etching solution is used for etching by immersion etching.

[0013] Preferably, the silver-aluminum etching solution is used at a temperature of 30-50°C.

[0014] The present invention provides a silver-aluminum etching liquid composition, which has the advantages of:

[0015] The invention provides a novel aluminum-silver etching solution, which is optimized in formula and introduces a variety of novel additives, including potassium bis(oxalatocopperate), silver ion complexing agent, mannitol, polyether diol, 4-formylphenylboric acid and other substances. These additives can form a stable complex or protective film with the aluminum and silver surfaces, reduce the chemical reaction rate during the etching process, and improve the etching selectivity and precision. At the same time, these additives can also effectively extend the service life of the etching solution and reduce the generation of waste liquid. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is an electron microscope image of the first substrate after etching with etching solution 1 in experimental group 1 of the present invention;

[0017] Figure 2 This is an electron microscope image of the tenth substrate after etching with etching solution 1 in experimental group 1 of the present invention;

[0018] Figure 3 This is an electron microscope image of the first substrate after etching with etching solution 5 in experimental group 5 of the present invention;

[0019] Figure 4 This is an electron microscope image of the tenth substrate after etching with etching solution 5 in experimental group 5 of the present invention;

[0020] Figure 5 This is an electron microscope image of the first substrate after etching with etching solution 1 in Experimental Group 6 of the present invention;

[0021] Figure 6 This is an electron microscope image of the tenth substrate after etching with etching solution 1 in Experimental Group 6 of the present invention;

[0022] Figure 7This is an electron microscope image of the first substrate after etching with etching solution 5 in experimental group 10 of the present invention;

[0023] Figure 8 This is an electron microscope image of the tenth substrate after etching with etching solution 5 in experimental group 10 of the present invention. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention is clearly and completely described below in combination with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] Embodiment 1:

[0026] Set up etching solutions with different compositions according to Table 1 below, and the remainder of each group is water:

[0027] Table 1

[0028]

[0029] In the above table, the inorganic acid is a mixture of phosphoric acid and nitric acid in a mass ratio of 5.2:1.05; the weak organic acid is acetic acid; the inorganic base is sodium hydroxide; and the silver ion complexing agent is a mixture of ammonium citrate and ammonium ethylenediaminetetraacetate in a mass ratio of 1.1:0.5.

[0030] Detection:

[0031] 1. Select a substrate with Mo / Al / Mo=800 / 2800 / 150Å specifications for etching test:

[0032] The etching solutions 1-5 in the above embodiment 1 were respectively used to immerse the substrate (40° C.) for etching, and the etching time was controlled to be about 50% over-etching. The specific etching is shown in the following Table 2:

[0033] Table 2

[0034]

[0035] Each etching solution was used to immerse and etch 10 substrates in turn, and the etching conditions of the first immersion-etched substrate and the tenth immersion-etched substrate in each group were detected. The specific results are shown in Table 3 below (where S / E is the distance from the end of PR (photoresist) to the metal end, T / A is the angle formed by the upper and lower metal layers, and Tip is the distance from the end of the topmost Mo layer to the metal):

[0036] Table 3

[0037]

[0038] It can be seen from the above table that the Mo / Al / Mo=800 / 2800 / 150Å substrate etched by etching solution 1 in experimental group 1 has a lower Tip, and the etching solution has a higher corrosion stability after multiple uses.

[0039] 2. Select a substrate with specifications of ITO (indium tin oxide alloy) / Ag / ITO 100 / 1000 / 70Å for etching test:

[0040] The etching solutions 1-5 in the above embodiment 1 were respectively used to immerse the substrate (40° C.) for etching, and the etching time was controlled to be 75 seconds. The specific etching is shown in the following Table 4:

[0041] Table 4

[0042]

[0043] Each etching solution was used to immerse and etch 10 substrates in turn, and the etching conditions of the first immersion-etched substrate and the tenth immersion-etched substrate in each group were tested. The specific results are shown in Table 5 below (where S / E is the distance from the PR end to the metal end):

[0044] Table 5

[0045]

[0046] From the above tests, it can be seen that the ITO / Ag / ITO 100 / 1000 / 70Å substrate treated with etching solution 1 has a smaller S / E, and the etching effect of the etching solution is more stable after multiple immersion etching.

[0047] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A silver-aluminum etching liquid composition, characterized in that, The composition is composed of the following raw materials in percentage by mass: 60.5%-65.5% of inorganic acid, 5.4%-5.9% of weak organic acid, 5.8%-6.7% of inorganic base, 1.2%-1.4% of potassium dioxalate cuprate, 1.5%-1.8% of silver ion complexing agent, 1.0%-1.4% of mannitol, 1.6%-1.8% of polyether diol, 1.0%-1.2% of 4-formylphenylboric acid, and the rest is water; The inorganic acid is a mixture of phosphoric acid and nitric acid in a mass ratio of 5-5.4:1.05-1.15; The weak organic acid is any one or more combinations of citric acid, salicylic acid, tartaric acid, lactic acid, and acetic acid; The inorganic base is any one or more combinations of sodium hydroxide, potassium hydroxide, potassium carbonate, sodium bicarbonate, and potassium bicarbonate; The silver ion complexing agent is a mixture of ammonium citrate and ammonium ethylenediaminetetraacetate in a mass ratio of 1-1.2:0.3-0.

6.

2. The composition according to claim 1, characterized in that: The etching solution composition is used for etching silver film and aluminum film, including a laminated film of an aluminum film and a Mo layer, and a laminated film of a silver film and an ITO layer.

3. The composition according to claim 1, characterized in that: The silver-aluminum etching solution is used for etching by immersion etching.

4. The composition according to claim 1, characterized in that: The temperature of the silver-aluminum etching solution during use is 30-50°C.

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