Light-emitting structure, method for manufacturing light-emitting structure, and display device

Abstract

The present disclosure belongs to the field of display technology, and specifically relates to a light-emitting structure, a method for manufacturing the light-emitting structure, and a display device. The light-emitting structure includes a substrate and a plurality of light-emitting units arrayed and arranged at intervals on the substrate. The second type doping layer in the light-emitting unit contacts the first type doping layer on opposite sides of the light-emitting layer. The surface of the second type doping layer facing away from the substrate is flush with the surface of the first type doping layer facing away from the substrate. The first type electrode contacts the surface of the first type doping layer facing away from the substrate, and the second type electrode contacts the surface of the second type doping layer facing away from the substrate. The surface of the first type electrode facing away from the substrate is flush with the surface of the second type electrode facing away from the substrate. The present disclosure reduces the difficulty of the process of making the surface of the first type electrode facing away from the substrate flush with the surface of the second type electrode facing away from the substrate when manufacturing the light-emitting structure by making the surface of the second type doping layer facing away from the substrate flush with the surface of the first type doping layer facing away from the substrate.

Description

Technical Field

[0001] The present disclosure belongs to the field of display technology, and particularly relates to a light-emitting structure, a method for manufacturing the light-emitting structure, and a display device. Background Art

[0002] Micro LED (micro light-emitting diode) has emerged in some display products due to its advantages such as high color saturation, high resolution, and high brightness, especially high pixel density (PPI) products such as AR (Augmented Reality) / VR (Virtual Reality).

[0003] like Figure 1 As shown, currently micro LEDs mainly have three structures: face-up, flip-down, and vertical. Since the surface of the first-type electrode close to the first-type doping layer in the Micro LED is not on the same horizontal plane as the surface of the second-type electrode close to the second-type doping layer, it is difficult to ensure that the surface of the first-type electrode away from the first-type doping layer is flush with the surface of the second-type electrode away from the second-type doping layer during manufacturing, thereby increasing the difficulty of bonding between the micro LED and the driving substrate. Summary of the invention

[0004] The purpose of the present application is to provide a light-emitting structure, a method for manufacturing a light-emitting structure, and a display device, by making the surface of the second type doped layer facing away from the substrate flush with the surface of the first type doped layer facing away from the substrate, so as to reduce the difficulty of the process of making the surface of the first type electrode facing away from the substrate flush with the surface of the second type electrode facing away from the substrate when manufacturing the light-emitting structure.

[0005] The present disclosure provides a light emitting structure, comprising:

[0006] substrate;

[0007] A plurality of light-emitting units are arrayed and spaced apart on the substrate, wherein the light-emitting units include a light-emitting layer, a first type doped layer, a second type doped layer, a first type electrode, and a second type electrode, wherein in the light-emitting units:

[0008] The second type doped layer and the first type doped layer are in contact with the two opposite sides of the light emitting layer, and the surface of the second type doped layer facing away from the substrate is flush with the surface of the first type doped layer facing away from the substrate.

[0009] The first type electrode contacts the surface of the first type doped layer facing away from the substrate, and the second type electrode contacts the surface of the second type doped layer facing away from the substrate. The surface of the first type electrode facing away from the substrate is flush with the surface of the second type electrode facing away from the substrate.

[0010] In an exemplary embodiment of the present disclosure, the light-emitting structure includes a reflective layer, which is located on a side of the light-emitting layer away from the substrate, and an orthographic projection of the reflective layer on the substrate at least covers an orthographic projection of the light-emitting layer on the substrate.

[0011] In an exemplary embodiment of the present disclosure, a surface of the first type doped layer facing away from the substrate and a surface of the second type doped layer facing away from the substrate are both flush with a surface of the light emitting layer facing away from the substrate.

[0012] In an exemplary embodiment of the present disclosure, the surface of the first type doped layer facing away from the substrate and the surface of the second type doped layer facing away from the substrate are both lower than the surface of the light emitting layer facing away from the substrate, and the reflective layer covers the surface of the light emitting layer facing away from the substrate and the side surface of the light emitting layer not covered by the first type doped layer and the second type doped layer; and / or

[0013] The light emitting unit further includes a protective layer, and the protective layer is arranged between the light emitting layer and the reflective layer.

[0014] In an exemplary embodiment of the present disclosure, in the direction away from the substrate, the outer peripheral side of the light-emitting layer is inclined toward the center of the light-emitting layer; the angle θ between the outer peripheral side of the light-emitting layer and the substrate is in the range of: 45°≤θ<90°.

[0015] The present disclosure provides a method for manufacturing a light-emitting structure, the method comprising:

[0016] providing a substrate;

[0017] Forming a plurality of light-emitting layers arranged in arrays and at intervals on the substrate;

[0018] A first type doped layer and a second type doped layer are respectively arranged on opposite sides of each of the light emitting layers, so that the second type doped layer and the first type doped layer are in contact with opposite sides of the light emitting layer, and the surface of the second type doped layer facing away from the substrate is flush with the surface of the first type doped layer facing away from the substrate;

[0019] A first type electrode is formed on a side of each first type doped layer facing away from the substrate, and a second type electrode is formed on a side of each second type doped layer facing away from the substrate, so as to form a plurality of light-emitting units arrayed and spaced apart on the substrate; wherein the first type electrode contacts a surface of the first type doped layer facing away from the substrate, the second type electrode contacts a surface of the second type doped layer facing away from the substrate, and the surface of the first type electrode facing away from the substrate is flush with the surface of the corresponding second type electrode facing away from the substrate.

[0020] In an exemplary embodiment of the present disclosure, the step of forming a plurality of light-emitting units arranged in an array and at intervals on the substrate includes:

[0021] Forming a first type doping material that completely covers the substrate and each of the light-emitting layers, and then patterning the first type doping material to form the first type doping layer on one side of the light-emitting layer;

[0022] A second type doping material is formed to entirely cover the substrate, each of the light emitting layers and each of the first type doping layers, and then the second type doping material is patterned to form the second type doping layer on the other side of the light emitting layer.

[0023] In an exemplary embodiment of the present disclosure, after forming the light-emitting layer and before forming the first type doping layer or the second type doping layer, the manufacturing method includes:

[0024] Processing the outer periphery corresponding to the light-emitting layer to remove the passivation layer formed by oxidation of the outer periphery corresponding to the light-emitting layer; and / or

[0025] The light-emitting unit includes a protective layer, and a method for forming the light-emitting layer and the protective layer includes:

[0026] forming a light-emitting material on the substrate, and forming a protective material on a side of the light-emitting material facing away from the substrate;

[0027] The light-emitting material and the protective material are patterned to form the light-emitting layer and the protective layer covering the light-emitting layer.

[0028] In an exemplary embodiment of the present disclosure, the light emitting unit includes a reflective layer, and the steps after forming the first type doping layer and the second type doping layer and before forming the first type electrode and the second type electrode include:

[0029] A reflective material is formed on a side of the light-emitting layer facing away from the substrate, and the reflective material is patterned to form the reflective layer, wherein the orthographic projection of the reflective layer on the substrate at least covers the orthographic projection of the light-emitting layer on the substrate.

[0030] The present disclosure provides a display device, comprising a main board and any one of the above-mentioned light-emitting structures, wherein the main board is electrically connected to each of the light-emitting units in the light-emitting structure.

[0031] This application scheme has the following beneficial effects:

[0032] The present disclosure arranges a first type doping layer and a second type doping layer on opposite sides of a light-emitting layer, respectively, and makes both the first type doping layer and the second type doping layer contact with a part of the side circumference of the light-emitting layer, thereby forming a first type electrode on a side of the first type doping layer facing away from the substrate and forming a second type electrode on a side of the second type doping layer facing away from the substrate. This can reduce the difficulty of a process of making the surface of the first type electrode facing away from the substrate flush with the surface of the second type electrode facing away from the substrate, thereby reducing the difficulty of bonding between the light-emitting unit and the driving substrate.

[0033] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0034] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings herein are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and are used together with the specification to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0036] Figure 1 Schematic diagram of the structure of three types of Micro LED in related technology.

[0037] Figure 2 It is a schematic diagram of a cross-sectional structure of the light-emitting structure in an embodiment of the present disclosure.

[0038] Figure 3 It is a schematic diagram of the structure of the light-emitting side of the light-emitting layer in the embodiment of the present disclosure.

[0039] Figure 4 Schematic diagram of another cross-sectional structure of the light-emitting structure in the embodiment of the present disclosure.

[0040] Figure 5Schematic diagram of the process of manufacturing the light emitting structure in the embodiment of the present disclosure.

[0041] Figure 6 It is a schematic diagram of the cross-sectional structure of continuously forming a buffer layer, a light-emitting material and a protective material on a substrate in an embodiment of the present disclosure.

[0042] Figure 7 It is a schematic diagram of the cross-sectional structure of the light-emitting layer and the protective layer formed after patterning in the embodiment of the present disclosure.

[0043] Figure 8 It is a schematic diagram of the process structure of forming the first type doping layer in the embodiment of the present disclosure.

[0044] Fig. 9 It is a schematic diagram of the process structure of forming the second type doping layer in the embodiment of the present disclosure.

[0045] Fig.10 It is a schematic diagram of the cross-sectional structure of forming a reflective layer in an embodiment of the present disclosure.

[0046] Fig.11 It is a schematic diagram of the process structure of transferring the light-emitting unit to the driving substrate after forming the light-emitting structure in the embodiment of the present disclosure.

[0047] Description of reference numerals:

[0048] 1. Light-emitting structure;

[0049] 2. Substrate;

[0050] 3. Light-emitting unit; 301. Light-emitting layer; 301a. Light-emitting material; 302. First type doping layer; 302a. First type doping material; 303. Second type doping layer; 303a. Second type doping material; 304. First type electrode; 305. Second type electrode; 306. Reflective layer; 307. Buffer layer; 308. Protective layer; 308a. Protective material;

[0051] 4. driving substrate; 41. driving electrode;

[0052] 5. Transfer device;

[0053] 6. Temporary substrate. DETAILED DESCRIPTION

[0054] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be more comprehensive and complete and will fully convey the concept of the example embodiments to those skilled in the art.

[0055] In addition, the described features, structures or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details, or other methods, components, devices, steps, etc. may be adopted. In other cases, known methods, devices, implementations or operations are not shown or described in detail to avoid blurring the various aspects of the present disclosure.

[0056] The present disclosure is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present disclosure described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present disclosure, and should not be understood as limiting the present disclosure.

[0057] In the embodiment of the present disclosure, the light-emitting unit 3 may also include a protective layer 308 and a reflective layer 306 at the same time. In this case, the protective layer 308 covers the outer surface of the light-emitting layer 301, and the protective layer 308 may directly contact the outer surface of the light-emitting layer 301 to protect the integrity and light-emitting performance of the light-emitting layer 301. The reflective layer 306 may cover the surface of the protective layer 308 away from the light-emitting layer 301 and the side surface of the protective layer 308, so that the light emitted to the non-light-emitting side of the light-emitting layer 301 can be reflected to the light-emitting side of the light-emitting layer 301 through the reflective layer 306, so as to improve the light emission rate, thereby improving the light emission brightness of the light-emitting structure 1.

[0058] like Figure 2 As shown, the present disclosure provides a light emitting structure 1, including a substrate 2 and a plurality of light emitting units 3, wherein the plurality of light emitting units 3 are arrayed and spaced apart on the substrate 2.

[0059] The light emitting unit 3 includes a light emitting layer 301 , a first type doping layer 302 , a second type doping layer 303 , a first type electrode 304 and a second type electrode 305 .

[0060] The light-emitting layers 301 in each light-emitting unit 3 are arranged in an array and at intervals on the substrate 2 , and each second-type doping layer 303 and each first-type doping layer 302 are also arranged at intervals.

[0061] In each light-emitting unit 3 , the first type doping layer 302 and the second type doping layer 303 are in contact with each other at two opposite sides of the light-emitting layer 301 .

[0062] Specifically, the second type doping layer 303 and the first type doping layer 302 in the embodiment of the present disclosure are respectively located on opposite sides of the light-emitting layer 301, and are respectively in contact with part of the side surfaces on opposite sides of the light-emitting layer 301, and the surface of the second type doping layer 303 facing away from the substrate 2 is flush with the surface of the first type doping layer 302 facing away from the substrate 2.

[0063] The first type electrode 304 is located on a side of the first type doped layer 302 facing away from the substrate 2, and the first type electrode 304 contacts the surface of the first type doped layer 302 facing away from the substrate. The second type electrode 305 is located on a side of the second type doped layer 303 facing away from the substrate 2, and the second type electrode 305 contacts the surface of the second type doped layer 303 facing away from the substrate. The surface of the first type electrode 304 facing away from the substrate 2 is flush with the surface of the second type electrode 305 facing away from the substrate 2.

[0064] The present invention forms a first type doping layer 302 and a second type doping layer 303 on opposite sides of a light-emitting layer 301, respectively, and makes the surface of the first type doping layer 302 facing away from the substrate 2 flush with the surface of the second type doping layer 303 facing away from the substrate 2, so that the first type electrode 304 and the second type electrode 305 can be manufactured from the same horizontal plane, so as to reduce or avoid the height difference between the surface of the first type electrode 304 facing away from the substrate 2 and the surface of the second type electrode 305 facing away from the substrate 2, thereby reducing the difficulty of bonding each light-emitting unit 3 to the driving substrate 4, so as to ensure that each light-emitting unit 3 in the light-emitting structure 1 emits light normally.

[0065] At the same time, since the first type electrode 304 and the second type electrode 305 can be manufactured on the same horizontal plane, the difficulty of the process can be greatly reduced when manufacturing the first type electrode 304 and the second type electrode 305 with equal height, thereby improving the production efficiency of the light-emitting structure 1.

[0066] In some embodiments of the present disclosure, in a direction away from the substrate 2 , the outer peripheral side of the light emitting layer 301 is inclined toward a direction close to the center of the light emitting layer 301 .

[0067] For example, in the present disclosure, the value range of the angle θ between the outer peripheral side of the light-emitting layer 301 and the substrate 2 can be: 45°≤θ<90°. For example, the value of the angle θ can be: 45°, 50°, 55°, 60°, 65°, 70°, 75°, 80°, 85°, etc., but is not limited thereto, and the value of the angle θ can be adjusted according to the actual situation of each light-emitting unit 3.

[0068] It should be noted that when the angle θ between the outer peripheral side of the light-emitting layer 301 and the substrate 2 is 90°, it is very easy to cause poor contact between the light-emitting layer 301 and the first type doping layer 302 and the second type doping layer 303, which may affect the injection of electrons and holes into the light-emitting layer 301 and affect the light-emitting effect of the light-emitting layer 301. When θ is less than 45°, the surface of the light-emitting layer 301 away from the substrate 2 is too small, which will lead to a smaller overall volume of the light-emitting layer 301, thereby causing the overall light-emitting brightness of the light-emitting layer 301 to decrease.

[0069] In addition, the first type doping layer 302 and the second type doping layer 303 in the present disclosure can be formed by deposition. When θ is greater than 90°, the light-emitting layer 301 presents an inverted trapezoid as a whole. When the light-emitting layer 301 is formed and the first type doping layer 302 and the second type doping layer 303 are deposited on opposite sides of the light-emitting layer 301, it is difficult for the first type doping layer 302 and the second type doping layer 303 to achieve contact with the outer peripheral side of the light-emitting layer 301, which will affect the light-emitting effect of the light-emitting structure 1.

[0070] The present disclosure ensures good contact between the light-emitting layer 301 and the first type doping layer 302 and the second type doping layer 303 by making the angle θ between the outer peripheral side of the light-emitting layer 301 and the substrate 2 less than 90°. At the same time, the present disclosure avoids the situation where the surface of the light-emitting layer 301 away from the substrate 2 is too small by making θ greater than or equal to 45°, thereby ensuring that the light-emitting layer 301 has enough space to realize the recombination of electrons and holes, thereby ensuring a good light-emitting effect of the light-emitting layer 301.

[0071] In addition, when the height of the light-emitting layer 301 is the same, compared with the solution of setting θ=90°, the present disclosure increases the contact area between the first type doping layer 302 and the second type doping layer 303 and the light-emitting layer 301 by setting 45°≤θ<90°, thereby improving the recombination efficiency of electrons and holes in the light-emitting layer 301, thereby improving the light-emitting efficiency of the light-emitting structure 1, and enhancing the light-emitting intensity of the light-emitting structure 1.

[0072] It should be noted that the colors of the multiple light-emitting layers 301 in the present disclosure may be different. For example, the emitted light of the light-emitting layer 301 in the present disclosure may include red light, green light, blue light, etc. The present disclosure can adjust the value range of the angle θ between the outer peripheral side of the light-emitting layer 301 of different colors and the substrate 2 according to the brightness effect required by the light-emitting structure 1.

[0073] In addition, the present disclosure can also extend the first type doping layer 302 to a partial area of ​​the light emitting layer 301 close to the surface of the substrate 2, and partially extend the second type doping layer 303 to a partial area of ​​the light emitting layer 301 away from the surface of the substrate 2. At this time, the first type doping layer 302 and the second type doping layer 303 are still located on opposite sides of the light emitting layer 301, and the first type doping layer 302 and the second type doping layer 303 are arranged at intervals, so that electrons and holes can be injected from opposite sides of the light emitting layer 301, respectively, to achieve the light emitting function of the light emitting layer 301. At the same time, the embodiment of the present disclosure can increase the contact surface between the first type doping layer 302 and the second type doping layer 303 and the light emitting layer 301, so as to improve the recombination efficiency of electrons and holes in the light emitting layer 301, thereby improving the light emitting efficiency of the light emitting structure 1, and enhancing the light emitting intensity of the light emitting structure 1.

[0074] In the embodiment of the present disclosure, the light emitting structure 1 may include a reflective layer 306, which is located on the side of the light emitting layer 301 away from the substrate 2, and the orthographic projection of the reflective layer 306 on the substrate 2 at least covers the orthographic projection of the light emitting layer 301 on the substrate 2. The reflective layer 306 has good reflective properties.

[0075] The present disclosure can limit the emission direction of the light of each light emitting unit 3 by providing the reflective layer 306 .

[0076] Specifically, Figure 3 As shown, when the light-emitting layer 301 emits light, the light emitted from the light-emitting layer 301 to the reflective layer 306 is reflected by the reflective layer 306 and then emitted in the direction of the substrate 2. Therefore, by setting the reflective layer 306, the present disclosure can define the side of the light-emitting layer 301 away from the substrate 2 as the non-light-emitting side, and define the side of the light-emitting layer 301 close to the substrate 2 as the light-emitting side. In the embodiment of the present disclosure, the first type electrode 304 and the second type electrode 305 are both located on the non-light-emitting side of the light-emitting layer 301, which can avoid the first type electrode 304 and the second type electrode 305 from occupying the light-emitting area of ​​the light-emitting side, thereby greatly increasing the light-emitting area of ​​each light-emitting unit 3, and further increasing the light-emitting brightness of the light-emitting structure 1.

[0077] like Figure 4As shown, in some embodiments of the present disclosure, the surface of the first type doped layer 302 facing away from the substrate 2 and the surface of the second type doped layer 303 facing away from the substrate 2 can be lower than the surface of the light emitting layer 301 facing away from the substrate. At this time, the reflective layer 306 covers the surface of the light emitting layer 301 facing away from the substrate 2 and the side surface of the light emitting layer 301 not covered by the first type doped layer 302 and the second type doped layer 303, thereby reducing or avoiding the situation where the light emitted from the light emitting layer 301 is emitted from the side surface of the light emitting layer 301 not covered by the first type doped layer 302 and the second type doped layer 303 to the non-light emitting side of the light emitting layer 301, thereby reducing or avoiding the possibility of light leakage in the light emitting structure 1.

[0078] In other embodiments of the present disclosure, the surface of the first type doped layer 302 facing away from the substrate 2 and the surface of the second type doped layer 303 facing away from the substrate 2 can be made flush with the surface of the light emitting layer 301 facing away from the substrate 2, so that the contact area between the first type doped layer 302 and the second type doped layer 303 and the outer peripheral side of the light emitting layer 301 can be increased to improve the recombination efficiency of electrons and holes in the light emitting layer 301, thereby improving the light emitting efficiency of the light emitting structure 1 and enhancing the light emitting intensity of the light emitting structure 1. When the light emitting unit 3 includes a reflective layer, the reflective layer 306 can cover the surface of the light emitting layer 301 facing away from the substrate 2.

[0079] In the embodiment of the present disclosure, the surface of the reflective layer 306 facing away from the substrate 2 may be lower than the surfaces of the first type doped layer 302 and the second type doped layer 303 facing away from the substrate 2, but not limited to this, the surface of the reflective layer 306 facing away from the substrate 2 may also be higher than the surfaces of the first type doped layer 302 and the second type doped layer 303 facing away from the substrate 2.

[0080] It should be understood that when the light-emitting unit 3 is bonded to the driving substrate 4, the first type electrode 304 and the second type electrode 305 in the light-emitting unit 3 are respectively bound to the corresponding driving electrode 41 on the driving substrate 4. The height of the driving electrode 41 is defined as H. If the surface of the reflective layer 306 facing away from the substrate 2 is higher than the surface of the first type doping layer 302 (or the second type doping layer 303) facing away from the substrate 2, it should be satisfied that the height difference between the surface of the reflective layer 306 facing away from the substrate 2 and the surface of the first type doping layer 302 (or the second type doping layer 303) facing away from the substrate 2 is less than or equal to H.

[0081] For example, when H=3um, the height difference between the surface of the reflective layer 306 away from the substrate 2 and the surface of the first type doped layer 302 (or the second type doped layer 303) away from the substrate 2 is less than or equal to 3um, so as to avoid the situation where the first type electrode 304 and the second type electrode 305 cannot be bound to the driving electrode 41.

[0082] In the embodiment of the present disclosure, the light emitting structure 1 may further include a buffer layer 307, which is disposed between the light emitting layer 301 and the substrate 2, and the buffer layer 307 may cover the substrate 2. By disposing the buffer layer 307, the present disclosure may prevent defects (such as dislocations, microcracks, etc.) from the substrate 2 from propagating to the light emitting layer 301, the first type doping layer 302, the second type doping layer 303 and other structures located on the substrate 2, thereby improving the crystal quality and overall performance of the light emitting layer 301, the first type doping layer 302, the second type doping layer 303 and other structures located on the substrate 2, so as to enhance the optical performance of the light emitting structure 1.

[0083] In the embodiment of the present disclosure, the light emitting structure 1 may further include a protective layer 308 . The protective layer 308 is disposed on a side of the light emitting layer 301 facing away from the substrate 2 , and the protective layer 308 covers the outer surface of the light emitting layer 301 .

[0084] It should be noted that the outer surface of the light-emitting layer 301 mentioned above refers to the surface of the light-emitting layer 301 exposed to the external environment.

[0085] For example, Figure 4 As shown, when the height of the first type doping layer 302 and the second type doping layer 303 is less than the height of the light-emitting layer 301, the outer surface of the light-emitting layer 301 refers to the side of the light-emitting layer 301 facing away from the substrate 2, and the side surface of the light-emitting layer 301 not covered by the first type doping layer 302 and the second type doping layer 303.

[0086] The protective layer 308 in the present disclosure has good chemical stability, thermal stability and optical properties. By setting the protective layer 308, the light-emitting layer 301 can be prevented from contacting with pollutants, moisture, oxygen, etc. in the external environment and being passivated or even corroded, thereby protecting the integrity and light-emitting properties of the light-emitting layer 301.

[0087] In the embodiment of the present disclosure, the light-emitting unit 3 may also include a protective layer 308 and a reflective layer 306 at the same time. In this case, the protective layer 308 covers the outer surface of the light-emitting layer 301, and the protective layer 308 may directly contact the outer surface of the light-emitting layer 301 to protect the integrity and light-emitting performance of the light-emitting layer 301. The reflective layer 306 may cover the surface of the protective layer 308 away from the light-emitting layer 301 and the side surface of the protective layer 308, so that the light emitted to the non-light-emitting side of the light-emitting layer 301 can be reflected to the light-emitting side of the light-emitting layer 301 through the reflective layer 306, so as to improve the light emission rate, thereby improving the light emission brightness of the light-emitting structure 1.

[0088] Combination Figures 5 to 11 As shown, the embodiment of the present disclosure provides a method for manufacturing a light emitting structure, the manufacturing method comprising:

[0089] S1. Provide a substrate.

[0090] S2. Form a plurality of light-emitting layers arranged in arrays and at intervals on a substrate.

[0091] S3. A first type doping layer and a second type doping layer are respectively arranged on two opposite sides of each light-emitting layer, so that the second type doping layer and the first type doping layer are in contact with the opposite sides of the light-emitting layer, and the surface of the second type doping layer facing away from the substrate is flush with the surface of the first type doping layer facing away from the substrate.

[0092] S4. Form a first type electrode on a side of each first type doped layer facing away from the substrate, and form a second type electrode on a side of each second type doped layer facing away from the substrate, so as to form a plurality of light-emitting units arrayed and spaced apart on the substrate; wherein the first type electrode contacts a surface of the first type doped layer facing away from the substrate, the second type electrode contacts a surface of the second type doped layer facing away from the substrate, and the surface of the first type electrode facing away from the substrate is flush with the surface of the corresponding second type electrode facing away from the substrate.

[0093] like Figure 6 and Figure 7 As shown, in the embodiment of the present disclosure, when the light-emitting unit 3 includes a protective layer 308, the method for forming the light-emitting layer 301 and the protective layer 308 may include: forming a light-emitting material 301a on the substrate 2, and forming a protective material on the side of the light-emitting material 301a away from the substrate 2. Patterning the light-emitting material 301a and the protective material to form the light-emitting layer 301 and the protective layer 308 covering the light-emitting layer 301.

[0094] The present disclosure can simplify the manufacturing process of the light-emitting structure 1 by first continuously forming the light-emitting material 301a and the protective material on the substrate 2, and then simultaneously forming the light-emitting layer 301 and the protective layer 308 through a single patterning process, thereby improving the manufacturing efficiency of the light-emitting structure 1.

[0095] It should be noted that the present disclosure can form the light-emitting material 301a and the protective material in sequence on the substrate 2 by continuous deposition, but is not limited to this. The light-emitting material 301a and the protective material can be continuously formed on the substrate 2 by other processes except deposition, which can be included in the embodiments of the present disclosure.

[0096] Furthermore, when the light emitting structure 1 further includes a buffer layer 307, the present disclosure can first continuously form the buffer layer 307, the light emitting material 301a and the protective material on the substrate 2, and the buffer layer 307 covers the substrate 2. Among them, the side of the buffer layer 307 away from the substrate 2 can be a horizontal plane, so as to facilitate the manufacture of structures such as the light emitting layer 301, the first type doping layer 302, and the second type doping layer 303.

[0097] like Figure 8 and Fig. 9As shown, in one embodiment of the present disclosure, the step of forming a plurality of light-emitting units 3 arrayed and spaced on a substrate 2 may include: firstly forming a first type doping material 302a that covers the substrate 2 and each light-emitting layer 301 on the entire surface, and then patterning the first type doping material 302a to form a first type doping layer 302 on one side of the light-emitting layer 301. Next, forming a second type doping material 303a that covers the substrate 2, each light-emitting layer 301, and each first type doping layer 302 on the entire surface, and then patterning the second type doping material 303a to form a second type doping layer 303 on the other side of the light-emitting layer 301.

[0098] It should be noted that the full coverage mentioned above means that the formed first type doping material 302a completely covers the surface of the substrate close to the light emitting layer, and similarly, the formed second type doping material 303a also completely covers the surface of the substrate close to the light emitting layer.

[0099] The first type doping material 302a in the present disclosure may be P-type doping, and the second type doping material 303a may be N-type doping, but is not limited thereto. The doping types of the first type doping material 302a and the second type doping material 303a in the present disclosure may be determined according to the actual conditions of each light-emitting unit 3.

[0100] In the embodiment of the present disclosure, the first type doping material 302a and the second type doping material 303a may be formed on the substrate 2 by deposition. However, the present disclosure does not limit the present disclosure. The first type doping material 302a and the second type doping material 303a may be formed on the substrate 2 by other processes, which may also be included in the embodiment of the present disclosure.

[0101] In the present disclosure, the patterning process of the first type doping material 302a and the second type doping material 303a may be a photolithography process, but is not limited thereto. Other processes for patterning the first type doping material 302a and the second type doping material 303a into the first type doping layer 302 and the second type doping layer 303, respectively, may be included in the embodiments of the present disclosure.

[0102] In addition, the present disclosure can also simultaneously form a first type doping material 302a and a second type doping material 303a at preset positions on opposite sides of the outer periphery of the light-emitting layer 301, and respectively form a first type doping layer 302 and a second type doping layer 303 on opposite sides of the light-emitting layer 301 through a photolithography process. At this time, the first type doping layer 302 and the second type doping layer 303 can be made through a single patterning process, thereby simplifying the manufacturing process of the first type doping layer 302 and the second type doping layer 303 to improve the manufacturing efficiency of the light-emitting structure 1.

[0103] It should be noted that when the first type of doping material 302a and the second type of doping material 303a are simultaneously formed at the preset positions on the opposite sides of the outer periphery of the light-emitting layer 301, the preset position for setting the first type of doping material 302a can be kept at a distance from the preset position for setting the first type of doping material 302a between two adjacent light-emitting layers 301, so as to avoid the problem that after the adjacent first type of doping material 302a and the second type of doping material 303a contact each other, the two carriers (electrons and holes) in the first type of doping material 302a and the second type of doping material 303a are rapidly recombined in the contact area, which leads to a decrease in carrier concentration and causes the light-emitting performance of the light-emitting structure 1 to decrease.

[0104] In the embodiment of the present disclosure, after forming the light-emitting layer 301 and before forming the first type doping layer 302 or the second type doping layer 303, the manufacturing method includes: processing the corresponding outer periphery of the light-emitting layer 301 to remove the passivation layer formed by oxidation of the corresponding outer periphery of the light-emitting layer 301.

[0105] The outer peripheral side mentioned above refers to the portion where the first type doping layer 302 or the second type doping layer 303 contacts the light emitting layer 301 .

[0106] It should be noted that after the light-emitting layer 301 is formed, the light-emitting layer 301 is very easy to react with oxygen in the external environment and form a passivation layer. If the first type doping layer 302 and the second type doping layer 303 are directly formed on the outer peripheral side of the light-emitting layer 301 without removing the passivation layer on the outer surface of the light-emitting layer 301, when the carriers in the first type doping layer 302 and the second type doping layer 303 are transmitted to the light-emitting layer 301, the passivation layer will hinder the effective transmission of the carriers, thereby reducing the recombination efficiency of the carriers, thereby causing the light-emitting intensity of the light-emitting structure 1 to be weakened.

[0107] like Figure 2 and Fig.10 As shown, in the embodiment of the present disclosure, when the light-emitting unit 3 includes a reflective layer 306, the steps after forming the first type doping layer 302 and the second type doping layer 303 and before forming the first type electrode 304 and the second type electrode 305 may include: forming a reflective material on the side of the light-emitting layer 301 facing away from the substrate 2, and patterning the reflective material to form the reflective layer 306, the orthographic projection of the reflective layer 306 on the substrate 2 at least covering the orthographic projection of the light-emitting layer 301 on the substrate 2.

[0108] The reflective material may be silver, aluminum or other materials with good reflective properties.

[0109] It should be noted that the formation order of the reflective layer 306 and the first type electrode 304 and the second type electrode 305 in the present disclosure can be interchanged, that is, the present disclosure can first form the reflective layer 306 on the side of the light-emitting layer 301 away from the substrate 2 after forming the first type doping layer 302 and the second type doping layer 303, and then form the first type electrode 304 on the first type doping layer 302, and form the second type electrode 305 on the second type doping layer 303.

[0110] When the light-emitting unit 3 includes both the protective layer 308 and the reflective layer 306 , the protective layer 308 may be first formed on the side of the light-emitting layer 301 facing away from the substrate 2 , and then the reflective layer 306 may be formed on the side of the protective layer 308 facing away from the light-emitting layer 301 .

[0111] like Fig.11 As shown, in the present disclosure, after the light-emitting structure 1 is formed, the light-emitting structure 1 can be transferred to a temporary substrate 6, and the first type electrode 304 and the second type electrode 305 in the light-emitting unit 3 are bonded to the temporary substrate 6. The side of the substrate 2 facing away from the light-emitting layer 301 is irradiated with a laser to peel off the light-emitting unit 3 from the substrate 2. A transfer device 5 is provided, and the light-emitting unit 3 is separated from the temporary substrate 6 by the transfer device 5, and the light-emitting unit 3 is transferred to the driving substrate 4, and the first type electrode 304 and the second type electrode 305 are respectively connected to the corresponding driving electrodes 41 on the driving substrate 4, so as to realize the transfer of each light-emitting unit 3.

[0112] The present disclosure provides a display device, which may include a mainboard and any of the above-mentioned light-emitting structures 1. The mainboard is electrically connected to each light-emitting unit 3 in the light-emitting structure 1, and the mainboard controls the light brightness of each light-emitting unit 3 by sending a signal to each light-emitting unit 3, thereby realizing the display function of the display device.

[0113] It should be noted that the display device in the present disclosure may be a microLED display device, a miniLED (micro light emitting diode) display device, or the like.

[0114] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0115] It should be noted that "upper", "lower", "left", "right" and the like are only used for distinction to facilitate description, and do not impose any directional limitation on the embodiments of the present invention. For example, the "upper" may actually be "lower", "left", "right" and other directions. In the present disclosure, unless otherwise clearly specified and limited, the terms "assembly", "connection" and the like should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral whole; it may be a mechanical connection or an electrical connection; it may be a direct connection or an indirect connection through an intermediate medium; it may be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to the specific circumstances.

[0116] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0117] Although the embodiments of the present disclosure have been shown and described above, it is to be understood that the above embodiments are exemplary and cannot be construed as limitations on the present disclosure. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present disclosure. Therefore, any changes or modifications made in accordance with the claims and specification of the present disclosure shall fall within the scope covered by the patent of the present disclosure.

Claims

1. A light emitting structure, characterized in that: include: substrate; A plurality of light-emitting units are arrayed and spaced apart on the substrate, wherein the light-emitting units include a light-emitting layer, a first type doped layer, a second type doped layer, a first type electrode, and a second type electrode, wherein in the light-emitting units: The second type doped layer and the first type doped layer are in contact with the two opposite sides of the light emitting layer, and the surface of the second type doped layer facing away from the substrate is flush with the surface of the first type doped layer facing away from the substrate. The first type electrode contacts a surface of the first type doped layer facing away from the substrate, the second type electrode contacts a surface of the second type doped layer facing away from the substrate, and the surface of the first type electrode facing away from the substrate is flush with the surface of the second type electrode facing away from the substrate; The light-emitting structure comprises a reflective layer, the reflective layer is located on a side of the light-emitting layer away from the substrate, and an orthographic projection of the reflective layer on the substrate at least covers an orthographic projection of the light-emitting layer on the substrate; The surface of the first type doped layer facing away from the substrate and the surface of the second type doped layer facing away from the substrate are both lower than the surface of the light emitting layer facing away from the substrate, and the reflective layer covers the surface of the light emitting layer facing away from the substrate and the side surface of the light emitting layer not covered by the first type doped layer and the second type doped layer.

2. The light emitting structure according to claim 1, characterized in that: The light emitting unit further includes a protective layer, and the protective layer is arranged between the light emitting layer and the reflective layer.

3. The light emitting structure according to claim 1, characterized in that: In the direction away from the substrate, the outer peripheral side of the light-emitting layer is inclined toward the direction close to the center of the light-emitting layer; the value range of the angle θ between the outer peripheral side of the light-emitting layer and the substrate is: 45°≤θ<90°.

4. A method for manufacturing a light-emitting structure, characterized in that: The production method comprises: providing a substrate; Forming a plurality of light-emitting layers arranged in arrays and at intervals on the substrate; A first type doped layer and a second type doped layer are respectively arranged on opposite sides of each of the light emitting layers, so that the second type doped layer and the first type doped layer are in contact with opposite sides of the light emitting layer, and the surface of the second type doped layer facing away from the substrate is flush with the surface of the first type doped layer facing away from the substrate; A first type electrode is formed on a side of each first type doped layer facing away from the substrate, and a second type electrode is formed on a side of each second type doped layer facing away from the substrate, so as to form a plurality of light emitting units arrayed and spaced apart on the substrate; wherein the first type electrode contacts a surface of the first type doped layer facing away from the substrate, the second type electrode contacts a surface of the second type doped layer facing away from the substrate, and the surface of the first type electrode facing away from the substrate is flush with the surface of the corresponding second type electrode facing away from the substrate; A reflective layer is formed on a side of the light-emitting layer away from the substrate, and the orthographic projection of the reflective layer on the substrate at least covers the orthographic projection of the light-emitting layer on the substrate; wherein, The surface of the first type doped layer facing away from the substrate and the surface of the second type doped layer facing away from the substrate are both lower than the surface of the light emitting layer facing away from the substrate, and the reflective layer covers the surface of the light emitting layer facing away from the substrate and the side surface of the light emitting layer not covered by the first type doped layer and the second type doped layer.

5. The manufacturing method according to claim 4, characterized in that: The step of forming a plurality of light-emitting units arranged in an array and at intervals on the substrate comprises: Forming a first type doping material that completely covers the substrate and each of the light-emitting layers, and then patterning the first type doping material to form the first type doping layer on one side of the light-emitting layer; A second type doping material is formed to entirely cover the substrate, each of the light emitting layers and each of the first type doping layers, and then the second type doping material is patterned to form the second type doping layer on the other side of the light emitting layer.

6. The method according to claim 4, characterized in that: After forming the light-emitting layer and before forming the first type doping layer or the second type doping layer, the manufacturing method includes: Processing the outer periphery corresponding to the light-emitting layer to remove the passivation layer formed by oxidation of the outer periphery corresponding to the light-emitting layer; and / or The light-emitting unit includes a protective layer, and a method for forming the light-emitting layer and the protective layer includes: forming a light-emitting material on the substrate, and forming a protective material on a side of the light-emitting material facing away from the substrate; The light-emitting material and the protective material are patterned to form the light-emitting layer and the protective layer covering the light-emitting layer.

7. The method according to claim 4, characterized in that: The steps after forming the first type doping layer and the second type doping layer and before forming the first type electrode and the second type electrode include: A reflective material is formed on a side of the light emitting layer facing away from the substrate, and the reflective material is patterned to form the reflective layer.

8. A display device, characterized in that: It comprises a main board and the light emitting structure as claimed in any one of claims 1 to 3, wherein the main board is electrically connected to each of the light emitting units in the light emitting structure.

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