Layout Structure and Multi-Time Programmable Memory

Abstract

The present application relates to a layout structure and a multi-time programmable memory. The layout structure includes: a substrate, including a P-type well region and an N-type well region; wherein the P-type well region includes a first resistance adjustment region, the first resistance adjustment region includes a P-type contact region, and the P-type contact region is used to connect an external first metal line; the N-type well region includes a second resistance adjustment region, the second resistance adjustment region includes an N-type contact region, and the N-type contact region is used to connect an external second metal line; a shallow trench isolation structure is located between the P-type well region and the N-type well region, wherein the projection area of ​​the first resistance adjustment region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure is greater than the projection area of ​​the second resistance adjustment region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure. In this way, the path resistance on the leakage path between the P-type well region and the adjacent N-type well region is increased, thereby reducing the leakage between the P-type well region and the adjacent N-type well region.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a layout structure and a multi-time programmable memory. Background Art

[0002] The multi-time programmable memory (MTP) in the non-volatile memory can perform data writing, reading, erasing and other operations for many times, and it adopts a floating gate structure, which can be combined with CMOS (Complementary Metal Oxide Semiconductor) or BCD (Bipolar-CMOS-DMOS) process, so the multi-time programmable memory has become a memory device widely used in electronic devices. For the MTP with floating gate structure, its storage array (array) will contain at least two wells of opposite types and adjacently arranged, such as the wells under the transistors and capacitors, which are of opposite types and adjacently arranged. When writing or erasing the MTP, there will be a high voltage difference between the two wells of opposite types and adjacently arranged, so the two wells of opposite types and adjacently arranged are prone to large leakage, affecting the reliability of the MTP. Summary of the invention

[0003] Based on this, it is necessary to provide a layout structure and a multi-time programmable memory that can reduce leakage between two opposite types of adjacently arranged well regions in order to solve the above technical problems.

[0004] In a first aspect, the present application provides a layout structure, characterized in that it includes:

[0005] A substrate, comprising a P-type well region and an N-type well region; wherein the P-type well region comprises a first resistance adjustment region and a first body region other than the first resistance adjustment region, the first resistance adjustment region comprises a P-type contact region, and the P-type contact region is used to connect an external first metal line;

[0006] The N-type well region includes a second resistance adjustment region and a second body region other than the second resistance adjustment region, the second resistance adjustment region includes an N-type contact region, and the N-type contact region is used to connect to an external second metal line;

[0007] A shallow trench isolation structure is located between the P-type well region and the N-type well region, wherein the bottom of the shallow trench isolation structure is in contact with the first resistance adjustment region, the second resistance adjustment region, the first body region and the second body region respectively; wherein a projection area of ​​the first resistance adjustment region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure is larger than a projection area of ​​the second resistance adjustment region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure.

[0008] In one embodiment, along the first direction, the length of the first resistance adjustment region is equal to the length of the second resistance adjustment region.

[0009] In one embodiment, along a first direction, the first body region is located on two sides of the first resistance adjustment region, and the second body region is located on two sides of the second resistance adjustment region.

[0010] In one embodiment, at the bottom of the shallow trench isolation structure, the first resistance adjustment region is in contact with the adjacent second resistance adjustment region, and the projection shape of the contact surface between the first resistance adjustment region and the adjacent second resistance adjustment region toward the shallow trench isolation structure is a straight line.

[0011] In one embodiment, at the bottom of the shallow trench isolation structure, the first resistance adjustment region is in contact with the adjacent second resistance adjustment region, and the projection shape of the contact surface between the first resistance adjustment region and the adjacent second resistance adjustment region toward the shallow trench isolation structure is wavy or sawtooth.

[0012] In one of the embodiments, a breakdown voltage between the P-type well region and the N-type well region is positively correlated with a projected area of ​​the first resistance adjustment region at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure.

[0013] In one of the embodiments, the substrate further includes a deep well region; along a direction perpendicular to the substrate, the deep well region is located between the substrate and the P-type well region and the N-type well region.

[0014] In one embodiment, along the second direction, the P-type contact region and the N-type contact region are located on the same straight line, and the distance between the P-type contact region and the corresponding shallow trench isolation structure is greater than the distance between the N-type contact region and the corresponding shallow trench isolation structure.

[0015] In one embodiment, the ion doping concentration of the first resistance adjustment region except the P-type contact region is equal to the ion doping concentration of the first body region; the ion doping concentration of the second resistance adjustment region except the N-type contact region is equal to the ion doping concentration of the second body region.

[0016] In a second aspect, the present application also provides a multi-time programmable memory, including a layout structure as provided in any of the above embodiments.

[0017] The unexpected effect of the present application is: in the above-mentioned layout structure and multi-time programmable memory, the substrate includes a P-type well region and an N-type well region, and the N-type well region is adjacent to the P-type well region; the P-type well region includes a first resistance adjustment region and a first body region other than the first resistance adjustment region, the first resistance adjustment region includes a P-type contact region, and the N-type well region includes a second resistance adjustment region and a second body region other than the second resistance adjustment region, and the second resistance adjustment region includes an N-type contact region; because the resistance of the P-type well region is usually greater than the resistance of the N-type well region, by setting the projection area of ​​the first resistance adjustment region at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure to be greater than the projection area of ​​the second resistance adjustment region at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure, the path resistance on the leakage path between the P-type well region and the adjacent N-type well region is increased, thereby reducing the leakage between the P-type well region and the adjacent N-type well region. Applying the above-mentioned layout structure to MTP can reduce the leakage between the P-type well region and the adjacent N-type well region in the MTP, thereby improving the reliability of the MTP. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the drawings required for use in the embodiments of the present application or related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0019] FIG1 is a top view of a layout structure in one embodiment;

[0020] Figure 2 It is one of the cross-sectional views of the layout structure along line AA' in FIG. 1 ;

[0021] Figure 3 This is a second top view of a layout structure in an embodiment;

[0022] Figure 4 This is the second cross-sectional view of the layout structure along line AA' in one embodiment.

[0023] Explanation of the reference numerals: 100 - substrate; 110 - P-type well region, 111 - first resistance adjustment region, 1111 - P-type contact region; 120 - N-type well region, 121 - second resistance adjustment region, 1211 - N-type contact region; 130 - shallow trench isolation structure; 140 - deep well region. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0025] The layout structure provided in the embodiment of the present application can be applied to a multi-time programmable memory.

[0026] In an exemplary embodiment, in combination with FIG. Figure 2 , a layout structure is provided, which includes a substrate 100 and a shallow trench isolation structure 130.

[0027] The substrate 100 is, for example, a P-type substrate and includes a P-type well region 110 and an N-type well region 120 , that is, the P-type well region 110 and the N-type well region 120 are formed in the substrate 100 .

[0028] The P-type well region 110 includes a first resistance adjustment region 111 and a first body region other than the first resistance adjustment region 111. The first resistance adjustment region 111 includes a P-type contact region 1111. The ion doping concentration of the P-type contact region 1111 is greater than the ion doping concentration of the first body region. The P-type contact region 1111 is used to connect to an external first metal line. The N-type well region 120 includes a second resistance adjustment region 121 and a second body region other than the second resistance adjustment region 121. The second resistance adjustment region 121 includes an N-type contact region 1211. The ion doping concentration of the N-type contact region 1211 is greater than the ion doping concentration of the second body region. The N-type contact region 1211 is used to connect to an external second metal line. The external second metal line and the external first metal line can be connected to voltages of different magnitudes, and there can be a high voltage difference between the external second metal line and the external first metal line, for example, the voltage connected to the external second metal line is greater than the voltage connected to the external first metal line.

[0029] The shallow trench isolation structure 130 can be formed by using shallow trench isolation (STI) technology. The shallow trench isolation structure 130 is located between the P-type well region 110 and the N-type well region 120. One of the side walls of the shallow trench isolation structure 130 is in contact with the first resistance adjustment region 111 and the first body region, respectively, and the other side wall of the shallow trench isolation structure 130 is in contact with the second resistance adjustment region 121 and the second body region, respectively. The bottom of the shallow trench isolation structure 130 is in contact with the first resistance adjustment region 111, the second resistance adjustment region 121, the first body region, and the second body region, respectively. In addition, at the bottom of the shallow trench isolation structure 130, along the second direction x, the first body region is in contact with the adjacent second body region, and the first resistance adjustment region 111 is in contact with the adjacent second resistance adjustment region 121.

[0030] In the above layout structure, the leakage path between the P-type well region 110 and the adjacent N-type well region 120 may pass through the P-type contact region 1111 , the first resistance adjustment region 111 , the second resistance adjustment region 121 and the N-type contact region 1211 in sequence along the second direction x. The projection area S1 of the first resistance adjustment region 111 at the bottom of the shallow trench isolation structure 130 toward the shallow trench isolation structure 130 is greater than the projection area S2 of the second resistance adjustment region 121 at the bottom of the shallow trench isolation structure 130 toward the shallow trench isolation structure 130. In other words, the volume of the first resistance adjustment region 111 at the bottom of the shallow trench isolation structure 130 on the leakage path is greater than the volume of the second resistance adjustment region 121 at the bottom of the shallow trench isolation structure 130 on the leakage path. Since the resistance of the P-type well region 110 is usually greater than the resistance of the N-type well region 120, the path resistance on the leakage path between the P-type well region 110 and the adjacent N-type well region 120 is increased, thereby reducing the leakage between the P-type well region 110 and the adjacent N-type well region 120. Applying the above layout structure to MTP can reduce the leakage between the P-type well region 110 and the adjacent N-type well region 120 in the MTP, thereby improving the reliability of the MTP.

[0031] In an exemplary embodiment, continuing to refer to FIG. 1 , the breakdown voltage between the P-type well region 110 and the N-type well region 120 is positively correlated with the size of the projection area S1 of the first resistance adjustment region 111 located at the bottom of the shallow trench isolation structure 130 toward the shallow trench isolation structure 130 .

[0032] In the solution of this embodiment, the larger the projection area of ​​the first resistance adjustment region 111 located at the bottom of the shallow trench isolation structure 130 toward the shallow trench isolation structure 130, the larger the volume of the first resistance adjustment region 111 located at the bottom of the shallow trench isolation structure 130 on the leakage path. Since the resistance of the P-type well region 110 is usually greater than the resistance of the N-type well region 120, the larger the path resistance on the leakage path between the P-type well region 110 and the adjacent N-type well region 120, and thus the larger the breakdown voltage between the P-type well region 110 and the adjacent N-type well region 120, the smaller the leakage between the P-type well region 110 and the adjacent N-type well region 120.

[0033] It should be noted that, the larger the projection area S1 of the first resistance adjustment zone 111 located at the bottom of the shallow trench isolation structure 130 toward the shallow trench isolation structure 130, the smaller the projection area S2 of the second resistance adjustment zone 121 located at the bottom of the shallow trench isolation structure 130 toward the shallow trench isolation structure 130; the larger the volume of the first resistance adjustment zone 111 located at the bottom of the shallow trench isolation structure 130 on the leakage path, the smaller the volume of the second resistance adjustment zone 121 located at the bottom of the shallow trench isolation structure 130 on the leakage path. It can be understood that the P-type well region and the adjacent N-type well region, which originally had the same dimensions in all directions, are enlarged along the second direction x of the area located at the bottom of the shallow trench isolation structure 130 in the area where the P-type contact area of ​​the P-type well region is located, so as to form a first resistance adjustment 111, and the portion of the P-type well region other than the first resistance adjustment area 111 remains unchanged and serves as a first body region; the second resistance adjustment area 121 is formed by reducing the size of the area located at the bottom of the shallow trench isolation structure 130 in the area where the N-type contact area of ​​the N-type well region is located along the second direction x, and the portion of the N-type well region other than the second resistance adjustment area 121 remains unchanged and serves as a second body region; as an example, the size of the P-type well region that is enlarged can be the same as the size that is reduced in the adjacent N-type well region, so that the total size of the P-type well region and the adjacent N-type well region will not change, and the size of the MTP does not need to be adjusted when the layout structure is applied to the MTP.

[0034] In an exemplary embodiment, referring to FIG1 , along the first direction y, the length of the first resistance adjustment region 111 is equal to the length of the second resistance adjustment region 121, and the first direction y is perpendicular to the second direction x. In this way, the first resistance adjustment region 111 and the second resistance adjustment region 121 are easy to manufacture, which is conducive to reliably increasing the path resistance on the leakage path between the P-type well region 110 and the adjacent N-type well region 120, thereby reliably reducing the leakage between the P-type well region 110 and the adjacent N-type well region 120.

[0035] In an exemplary embodiment, referring to FIG1 , along the first direction y, the first body region is located on both sides of the first resistance adjustment region 111, and the second body region is located on both sides of the second resistance adjustment region 121, and the first direction y is perpendicular to the second direction x. In this way, it is helpful to ensure that the reliability of the first resistance adjustment region 111 and the second resistance adjustment region 121 is high, and it is helpful to reliably increase the path resistance on the leakage path between the P-type well region 110 and the adjacent N-type well region 120, thereby reliably reducing the leakage between the P-type well region 110 and the adjacent N-type well region 120.

[0036] In an exemplary embodiment, with continued reference to FIG. 1 , at the bottom of the shallow trench isolation structure 130, the first resistance adjustment region 111 is in contact with the adjacent second resistance adjustment region 121, and the projection of the contact surface of the first resistance adjustment region 111 and the adjacent second resistance adjustment region 121 toward the shallow trench isolation structure 130 is in the shape of a straight line. At this time, the shape of the positive projection of the first resistance adjustment region 111 and the second resistance adjustment region 121 toward the substrate 100 can be a rectangle, the shape of the first resistance adjustment region 111 at the bottom of the shallow trench isolation structure 130 is a rectangular parallelepiped, and the shape of the second resistance adjustment region 121 at the bottom of the shallow trench isolation structure 130 is also a rectangular parallelepiped. In this way, the first resistance adjustment region 111 and the second resistance adjustment region 121 are further made easy to manufacture, thereby further facilitating reliable increase of the path resistance on the leakage path between the P-type well region 110 and the adjacent N-type well region 120.

[0037] In an exemplary embodiment, referring to Figure 3 , at the bottom of the shallow trench isolation structure 130, the first resistance adjustment area 111 is in contact with the adjacent second resistance adjustment area 121, and the projection of the contact surface between the first resistance adjustment area 111 and the adjacent second resistance adjustment area 121 toward the shallow trench isolation structure 130 is wavy. At this time, the first side of the first resistance adjustment area 111 at the bottom of the shallow trench isolation structure 130 facing the second resistance adjustment area 121 is wavy, and the second side of the second resistance adjustment area 121 at the bottom of the shallow trench isolation structure 130 facing the first resistance adjustment area 111 is also wavy, and the first side and the second side form a complementary structure for seamless contact. In this way, it is beneficial to accurately control the path resistance on the leakage path between the P-type well region 110 and the adjacent N-type well region 120 by adjusting the degree of concavity and convexity of the first side and the second side.

[0038] In an exemplary embodiment, at the bottom of the shallow trench isolation structure 130, the first resistance adjustment region 111 is in contact with the adjacent second resistance adjustment region 121, and the projection of the contact surface between the first resistance adjustment region 111 and the adjacent second resistance adjustment region 121 toward the shallow trench isolation structure 130 is in a sawtooth shape. At this time, the first side surface of the first resistance adjustment region 111 at the bottom of the shallow trench isolation structure 130 facing the second resistance adjustment region 121 is sawtooth-shaped, and the second side surface of the second resistance adjustment region 121 at the bottom of the shallow trench isolation structure 130 facing the first resistance adjustment region 111 is also sawtooth-shaped, and the first side surface and the second side surface form a complementary structure for seamless contact. In this way, it is beneficial to accurately control the path resistance on the leakage path between the P-type well region 110 and the adjacent N-type well region 120 by adjusting the degree of concavity and convexity of the first side surface and the second side surface.

[0039] In an exemplary embodiment, continue to refer to Figure 4 , the surface of the P-type contact region 1111 facing away from the substrate 100 is located in the surface of the first resistance adjustment region 111 facing away from the substrate 100, the surface of the P-type contact region 1111 close to the substrate 100 and the side of the P-type contact region 1111 are both located in the first resistance adjustment region 111, and the ion doping concentration of the first resistance adjustment region 111 other than the P-type contact region 1111 is equal to the ion doping concentration of the first body region; the surface of the N-type contact region 1211 facing away from the substrate 100 is located in the surface of the second resistance adjustment region 121 facing away from the substrate 100, the surface of the N-type contact region 1211 close to the substrate 100 and the side of the N-type contact region 1211 are both located in the second resistance adjustment region 121, and the ion doping concentration of the second resistance adjustment region 121 other than the N-type contact region 1211 is equal to the ion doping concentration of the second body region; in this way, it is beneficial to simplify the structure of the layout structure, so that the layout structure is easy to implement and the cost is low.

[0040] In an exemplary embodiment, Figure 4 As shown, the substrate 100 further includes a deep well region 140, that is, a deep well region 140 is further formed in the substrate 100. The deep well region 140 may be an N-type deep well region. In a direction perpendicular to the substrate 100, the deep well region 140 is located between the substrate 100 and the P-type well region 110 and the N-type well region 120. The deep well region 140 is used to isolate the P-type well region 110 from the adjacent N-type well region 120, and further reduce the leakage between the P-type well region 110 and the adjacent N-type well region 120.

[0041] In an exemplary embodiment, continue to refer to Figure 4Along the second direction x, the P-type contact region 1111 and the N-type contact region 1211 are located on the same straight line, and the distance between the P-type contact region 1111 and the corresponding shallow trench isolation structure 130 is greater than the distance between the N-type contact region 1211 and the corresponding shallow trench isolation structure 130 .

[0042] Exemplarily, the P-type well region 110 is the well region below the capacitor, and the orthographic projection of the P-type contact region 1111 in the first resistance adjustment region 111 can be located in the central area of ​​the first resistance adjustment region 111; the N-type well region 120 is the well region below the transistor, and the orthographic projection of the N-type contact region 1211 in the second resistance adjustment region 121 can be located at the side position of the second resistance adjustment region 121, which is beneficial to reduce crosstalk with surrounding structures.

[0043] In an exemplary embodiment, along a direction perpendicular to the substrate 100 , the depth of the P-type well region 110 is equal to the depth of the N-type well region 120 , so as to ensure that the basic electrical characteristics of the MTP are maintained when the layout structure is applied to the MTP.

[0044] In an exemplary embodiment, along the first direction x, the width of the first body region is the same as the width of the second body region, which further ensures that the basic electrical characteristics of the MTP are maintained when the layout structure is applied to the MTP.

[0045] In an exemplary embodiment, the projection area of ​​the first body region located at the bottom of the shallow trench isolation structure 130 toward the shallow trench isolation structure 130 is equal to the projection area of ​​the second body region located at the bottom of the shallow trench isolation structure 130 toward the shallow trench isolation structure 130, further ensuring that the basic electrical characteristics of the MTP are guaranteed when the layout structure is applied to the MTP.

[0046] In an exemplary embodiment, along a direction perpendicular to the substrate 100, the thickness of the first resistance adjustment region 111 is the same as the thickness of the first body region, and the thickness of the second resistance adjustment region 121 is the same as the thickness of the second body region, further ensuring that the basic electrical characteristics of the MTP are guaranteed when the layout structure is applied to the MTP.

[0047] It is necessary to add that: continue to refer to Figure 4Combined with Table 1, the sum of D1 and D2 is the width of the bottom of the shallow trench isolation structure 130 along the second direction x. The larger D1 and the smaller D2, the larger the width of the first resistance adjustment area 111 and the smaller the width of the second resistance adjustment area 121 of the bottom of the shallow trench isolation structure 130 along the second direction x. It can be seen from Table 1 that in the experimental test, as D1 becomes larger and D2 becomes smaller, the larger the breakdown voltage between the P-type well region 110 and the adjacent N-type well region 120 is tested. The larger the breakdown voltage means the larger the path resistance on the leakage path between the P-type well region 110 and the adjacent N-type well region 120. The larger the breakdown voltage or the larger the path resistance on the leakage path, the smaller the corresponding leakage. It can be seen that the solution of the embodiment of the present application effectively reduces the leakage between the P-type well region 110 and the adjacent N-type well region 120.

[0048] Table 1

[0049]

[0050] In an exemplary embodiment, a multi-time programmable memory is provided. The multi-time programmable memory includes a layout structure as described in any of the above embodiments.

[0051] The unexpected effect of the present application is that the multi-time programmable memory and layout structure provided in the embodiments of the present application belong to the same inventive concept, can solve the same technical problem, and thus achieve the same technical effect, that is, by setting the projection area of ​​the first resistance adjustment area located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure to be larger than the projection area of ​​the second resistance adjustment area located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure, the path resistance on the leakage path between the P-type well region and the adjacent N-type well region is increased, thereby reducing the leakage between the P-type well region and the adjacent N-type well region, thereby improving the MTP reliability.

[0052] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0053] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A layout structure, characterized in that: include: A substrate, comprising a P-type well region and an N-type well region; wherein the P-type well region comprises a first resistance adjustment region and a first body region other than the first resistance adjustment region, the first resistance adjustment region comprises a P-type contact region, and the P-type contact region is used to connect an external first metal line; The N-type well region includes a second resistance adjustment region and a second body region other than the second resistance adjustment region, the second resistance adjustment region includes an N-type contact region, and the N-type contact region is used to connect to an external second metal line; A shallow trench isolation structure, located between the P-type well region and the N-type well region, wherein the bottom of the shallow trench isolation structure is in contact with the first resistance adjustment region, the second resistance adjustment region, the first body region and the second body region respectively; wherein a projection area of ​​the first resistance adjustment region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure is greater than a projection area of ​​the second resistance adjustment region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure; The breakdown voltage between the P-type well region and the N-type well region is positively correlated with the size of the projection area of ​​the first resistance adjustment region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure.

2. The layout structure according to claim 1, characterized in that: Along the first direction, the length of the first resistance adjustment region is equal to the length of the second resistance adjustment region; The first direction is the length direction of the shallow trench isolation structure.

3. The layout structure according to claim 1 or 2, characterized in that: Along a first direction, the first body region is located at two sides of the first resistance adjustment region, and the second body region is located at two sides of the second resistance adjustment region; The first direction is the length direction of the shallow trench isolation structure.

4. The layout structure according to claim 1, characterized in that: At the bottom of the shallow trench isolation structure, the first resistance adjustment region is in contact with the adjacent second resistance adjustment region, and a projection of a contact surface between the first resistance adjustment region and the adjacent second resistance adjustment region toward the shallow trench isolation structure is a straight line.

5. The layout structure according to claim 1, characterized in that: At the bottom of the shallow trench isolation structure, the first resistance adjustment region is in contact with the adjacent second resistance adjustment region, and a projection shape of a contact surface between the first resistance adjustment region and the adjacent second resistance adjustment region toward the shallow trench isolation structure is wavy or sawtooth.

6. The layout structure according to claim 1, characterized in that: The substrate further includes a deep well region; along a direction perpendicular to the substrate, the deep well region is located between the substrate and the P-type well region and the N-type well region.

7. The layout structure according to claim 1, characterized in that: Along the second direction, the P-type contact region and the N-type contact region are located on the same straight line, and the distance between the P-type contact region and the corresponding shallow trench isolation structure is greater than the distance between the N-type contact region and the corresponding shallow trench isolation structure; The second direction is the width direction of the shallow trench isolation structure.

8. The layout structure according to claim 1, characterized in that: The ion doping concentration of the first resistance adjustment region except the P-type contact region is equal to the ion doping concentration of the first body region; the ion doping concentration of the second resistance adjustment region except the N-type contact region is equal to the ion doping concentration of the second body region.

9. The layout structure according to claim 1, characterized in that: Along the first direction, the width of the first body region is the same as the width of the second body region; the projection area of ​​the first body region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure is equal to the projection area of ​​the second body region located at the bottom of the shallow trench isolation structure toward the shallow trench isolation structure; The first direction is the length direction of the shallow trench isolation structure.

10. A multi-time programmable memory, characterized in that: Comprising a layout structure as described in any one of claims 1-9.

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