Photoelectric chip co-packaged low-heat-consumption transceiver module

Abstract

The invention discloses a low-heat-consumption transceiver module co-packaged by photoelectric chips. The low-heat-consumption transceiver module comprises a cover plate, an electro-optical modulation chip, a monitoring photoelectric detection chip, a receiving photoelectric detection chip, a first base, a second base, a control chip, a transimpedance amplification chip, a bottom plate, a tube shell, a first input optical fiber, a second input optical fiber and an output optical fiber, a top cavity and a first bottom cavity are sequentially arranged on the first base from top to bottom in the vertical direction, and an electro-optical modulation chip and a receiving photoelectric detection chip are bonded in the top cavity. The electro-optical modulation chip, the receiving photoelectric detection chip and the corresponding matched chips are subjected to co-packaging design, the integration level and the high-frequency performance are improved, transmission of receiving and transmitting radio-frequency signals, control signals, state signals and the like can be carried out through welding of the bottom plate solder balls and an external printed board, switching of a radio-frequency connector is avoided, and the cost is reduced. The passive devices and the active devices in the module are welded in a layered and cavity manner, so that the space in the vertical direction is fully utilized, and heat dissipation layout is reasonably performed.

Description

Technical Field

[0001] The invention relates to the technical field of optoelectronic hybrid integrated packaging, and in particular to a low heat consumption transceiver module co-packaged with optoelectronic chips. Background Art

[0002] RF transceiver modules play an important role in RF signal transmission and communication. Microwave photonics technology can improve the broadband performance of RF transceiver modules due to its high-frequency and broadband characteristics. The electro-optical modulator in microwave photonics technology serves as an electro-optical conversion unit, which can realize the receiving function of the RF transceiver module, receive RF signals and convert them into the optical domain, and transmit them through optical signals. The photodetector in microwave photonics technology serves as a photoelectric conversion unit, which receives optical signals and converts them into RF signal output, and can realize the transmitting function of the RF transceiver module. Therefore, the electro-optical modulator and the photodetector are integrated into one module, which can also have RF transceiver functions. There are currently a variety of optoelectronic transceiver module solutions, but there are still some shortcomings, mainly for the following three reasons:

[0003] 1. The optoelectronic transceiver module is an important link in connecting microwaves and light waves. In order to avoid the size limitation of RF connectors, the current highly integrated microwave circuits often adopt the form of integrated packaging by mounting microwave components on printed circuit boards, thereby further improving the integration of microwave systems. However, the electro-optic modulator with independent package requires a control loop formed by optical beam splitters, monitoring photodetection chips, control circuits and other devices to stabilize the bias operating point; the photodetector with independent package needs to place the bias circuit, matching circuit, and transimpedance amplifier chip as close to the photodetector as possible to reduce the impact of parasitic parameters on high-frequency performance; the RF interface of the electro-optic modulator and photodetector with independent package is generally SMA, SMP, SSMP and other interfaces and connectors. Therefore, the optoelectronic transceiver module built by electro-optic modulators and photodetectors with independent packages has problems such as large size and incompatibility of interfaces with highly integrated microwave circuit interfaces.

[0004] 2. The conversion efficiency of the laser is low, so when the laser produces strong laser output, it will be accompanied by a large heat loss, and generally requires a corresponding heat sink and heat dissipation device. Integrating the laser, electro-optic modulator, photodetector and supporting heat dissipation devices into one module will result in a large module heat loss and size.

[0005] 3. The electro-optic modulation chip, photoelectric detection chip and supporting driver chip are packaged together in one module with low heat consumption characteristics. However, due to the large number of electro-optic modulation chips, photoelectric detection chips and supporting driver chips, all chips are spread out in the horizontal direction for interconnection, and the vertical dimension cannot be fully utilized for integration, which will cause the horizontal size of the entire module to be larger. Summary of the invention

[0006] In order to solve the technical problems existing in the background technology, the present invention proposes a low heat consumption transceiver module in which optoelectronic chips are co-packaged.

[0007] The low heat consumption transceiver module with optoelectronic chips co-packaged in the present invention comprises: a cover plate, an electro-optical modulation chip, a monitoring photoelectric detection chip, a receiving photoelectric detection chip, a first base, a second base, a control chip, a transimpedance amplifier chip, a bottom plate, a tube shell, a first input optical fiber, a second input optical fiber and an output optical fiber; a top cavity and a first bottom cavity are arranged on the first base in the vertical direction from top to bottom, an electro-optical modulation chip and a receiving photoelectric detection chip are bonded inside the top cavity, a monitoring photoelectric detection chip is bonded on the top of the electro-optical modulation chip, a control chip and a transimpedance amplifier chip are welded on the top of the bottom plate, and the center of the first input optical fiber is bonded to the receiving photoelectric detection chip. The center of the photosensitive surface of the measuring chip coincides with the center of the input optical coupling port of the electro-optic modulation chip, the center of the second input optical fiber coincides with the center of the input optical coupling port of the electro-optic modulation chip, the input light of the second input optical fiber is incident on the input optical coupling port of the electro-optic modulation chip through end-face coupling, the center of the output optical coupling port of the electro-optic modulation chip coincides with the center of the output optical fiber, the output light of the output optical coupling port of the electro-optic modulation chip is incident on the output optical fiber through end-face coupling, the electro-optic modulation chip is electrically connected to the control chip, the monitoring photoelectric detection chip is electrically connected to the control chip, and the receiving photoelectric detection chip is electrically connected to the transimpedance amplifier chip, so as to realize the bias control closed loop of the electro-optic modulation chip

[0008] Preferably, the first base is low temperature co-fired or welded on the top of the second base, the second base is welded on the top of the base plate, a tube shell is welded on the upper surface of the base plate, and a chamber that can accommodate the first base and the second base is provided on the tube shell, and a cover plate is welded on the top of the tube shell.

[0009] Preferably, the first bottom cavity is communicated with the top of the second base, a second bottom cavity is arranged on the second base in the vertical direction, and the second bottom cavity is communicated with the top of the bottom plate; a first input optical fiber, a second input optical fiber and an output optical fiber are welded on one side of the tube shell, and the first input optical fiber, the second input optical fiber and the output optical fiber all extend to the cavity of the tube shell and are bonded to the inside of the top cavity, and the first input optical fiber, the second input optical fiber and the output optical fiber are welded to the tube shell for sealed packaging.

[0010] Preferably, the base plate includes a base plate medium, a welding belt, a base plate surface wiring, a base plate metal via, and a bottom solder ball; a plurality of base plate surface wirings are arranged on the upper surface of the base plate medium, a plurality of groups of base plate metal vias are arranged in an array on the base plate medium, and the plurality of groups of base plate metal vias are distributed in a vertical direction, and bottom ends of the plurality of groups of base plate metal vias are welded with bottom solder balls in a one-to-one correspondence; the base plate surface wiring is used for welding and installation of the second base, the control chip and the transimpedance amplifier chip, and for signal transmission; the base plate metal vias are used for signal transmission between the second base, the control chip and the transimpedance amplifier chip on the one hand, and the base plate metal vias located below the control chip and the transimpedance amplifier chip on the other hand are used to form a heat dissipation channel.

[0011] Preferably, the first base includes a first base body, a top cavity, a first bottom cavity, first base surface wiring and first base metal vias; the upper surface of the first base body is located on both sides of the top cavity and a plurality of groups of first base surface wirings are arranged, the interior of the first base body is located on both sides of the top cavity and a plurality of groups of first base metal vias are arranged, and the plurality of groups of first base metal vias correspond one-to-one to the plurality of groups of first base surface wirings, and the top of the first base metal vias is electrically connected to the first base surface wirings.

[0012] Preferably, the second base includes a second base body, a second base metal via, a second base surface wiring, a matching load, a bias capacitor, a bias inductor and a second bottom cavity; a bias capacitor and a bias inductor are welded on the upper surface of the second base body, the bias capacitor and the bias inductor are wire-bonded, the bottom solder ball on the bottom plate feeds a bias voltage, and sequentially passes through the corresponding bottom plate metal vias, the second base metal vias, the second base surface wiring, the bias capacitor, the bias inductor, the first base metal vias and the first base surface wiring to provide a bias voltage to the receiving photodetection chip; the matching load welded on the upper surface of the second base body sequentially passes through the second base surface wiring, the second base metal vias, the first base metal vias and the first base surface wiring to match the RF output of the receiving photodetection chip; the second bottom cavity is used to accommodate a control chip and a transimpedance amplifier chip, and the multiple second base metal vias and multiple second base surface wirings of the second base are used for signal transmission.

[0013] Preferably, the upper surface of the electro-optic modulation chip is flush with the upper surface of the top cavity; the interface of the electro-optic modulation chip includes an input optical coupling port, an RF input electrode, a bias input electrode, an output optical coupling port and a monitoring optical coupling port; the input optical coupling port and the output optical coupling port are end-face coupling structures, which are used for optical coupling between the electro-optic modulation chip and the input light and the output light, and the monitoring optical coupling port is an array waveguide grating or an on-chip optical reflection structure, which is used for vertical optical coupling between monitoring lights; the RF input electrode is an RF signal loading port, and the bias input electrode is a bias voltage loading port; the RF input electrode and the bias input electrode are respectively connected to the first base wire bonding, and the RF input electrode is divided into two ends, one end of which is connected to an external RF signal, and the external RF signal is fed in through the bottom solder ball on the bottom plate, and is fed into the RF input electrode through the bottom plate metal via corresponding to the bottom solder ball, the second base metal via, the first base metal via and the first base surface wiring wire bonding in sequence, and the other end is connected to the RF load on the electro-optic modulation chip.

[0014] Preferably, the interface of the control chip includes a monitoring input port, a bias output port, a download input port and a status output port; the monitoring input port, the bias output port, the download input port and the status output port are respectively connected to the base plate wire bonding; the monitoring input port is connected to the monitoring output port wire bonding of the monitoring photoelectric detection chip through the base plate surface wiring, the second base metal via, the first base metal via and the first base surface wiring in sequence; the bias output port is connected to the bias input electrode wire bonding of the electro-optical modulation chip through the base plate surface wiring, the second base metal via, the first base metal via and the first base surface wiring in sequence; the download input port is connected to the bottom solder ball through the base plate surface wiring and the base plate metal via in sequence, and the control program update and download signals are input through the bottom solder ball; the status output port is connected to the bottom solder ball through the base plate surface wiring and the base plate metal via in sequence, and the status signal of the control chip is output through the bottom solder ball.

[0015] Preferably, the interface of the transimpedance amplifier chip includes an amplifying input port and an amplifying output port. The amplifying input port is electrically connected to the RF output electrode of the receiving photodetection chip through the surface wiring of the base plate, the second base metal via, the first base metal via and the first base surface wiring in sequence. The RF signal output by the receiving photodetection chip is amplified by the transimpedance amplifier chip and then output through the amplifying output port, the surface wiring of the base plate, the metal via of the base plate and the bottom solder ball in sequence.

[0016] Preferably, the monitoring photoelectric detection chip interface includes a monitoring optical port and a monitoring output port, the monitoring optical port is located on the lower surface of the monitoring photoelectric detection chip, and the monitoring output port is located on the upper surface of the monitoring photoelectric detection chip; the monitoring optical port of the monitoring photoelectric detection chip coincides with the monitoring optical coupling port of the electro-optical modulation chip; the monitoring output port is wire-bonded to the first base, and the monitoring output port is wire-bonded to the monitoring input port of the control chip in sequence through the first base surface wiring, the first base metal via, the second base metal via and the bottom plate surface wiring;

[0017] The receiving photodetection chip is bonded or welded to the upper surface of the first base, and the receiving photodetection chip has a photosensitive surface and a radio frequency output electrode; the photosensitive surface is located on the side of the receiving photodetection chip, and the radio frequency output electrode is located on the bottom of the receiving photodetection chip, and the radio frequency output electrode is sequentially connected to the bias capacitor, bias inductor and matching load lead bonding welded on the upper surface of the second base through the first base surface wiring, the first base metal via and the second base surface wiring; the radio frequency output electrode of the receiving photodetection chip is sequentially connected to the amplification input port lead bonding of the transimpedance amplifier chip through the first base surface wiring, the first base metal via, the second base metal via and the bottom plate surface wiring.

[0018] In the present invention, the proposed low heat consumption transceiver module with co-packaged optoelectronic chips is achieved by co-packaging the electro-optical modulation chip, the monitoring photoelectric detection chip, the receiving photoelectric detection chip and the control chip. The monitoring photoelectric detection chip is surface-mounted on the electro-optical modulation chip for optical transmission. The electro-optical modulation chip, the monitoring photoelectric detection chip and the control chip are connected to the circuit by bonding with metal vias in the first base and the second base, thereby completing the bias control closed loop of the entire electro-optical modulation chip. The receiving photoelectric detection chip, the transimpedance amplifier chip, the bias capacitor, the bias inductor and the matching load are co-packaged in the internal cavity through the first base and the second base. While realizing the optoelectronic transceiver function, all optoelectronic chips are co-packaged and integrated in the vertical direction, so that the size of the entire module is reduced in the vertical direction. The electro-optical modulation chip and the receiving photoelectric detection chip have low heat consumption, and the entire module has low heat consumption. The present invention performs a layered and cavity-divided design for active and passive devices in the module, encapsulates passive low-heat consumption devices such as bias capacitors, bias inductors and matching loads between the first and second base bodies, and encapsulates two active chips, the control chip and the transimpedance amplifier chip, on the bottom plate. The metal vias of the bottom plate under the control chip and the transimpedance amplifier chip form a heat dissipation channel for heat dissipation, thereby improving the heat dissipation capacity of the control chip and the transimpedance amplifier chip. On the one hand, the electro-optical modulation chip adopts an end-face coupling scheme to perform optical coupling with the input optical fiber and the output optical fiber, which can reduce the vertical height of the entire module, and is highly compatible with the microwave circuit packaging device, and is easy to be co-packaged with the microwave packaging device. On the other hand, a surface-mounted monitoring photoelectric detection chip scheme is adopted for monitoring optical coupling. Compared with the end-face coupling scheme, the surface-mounted coupling optical path is the shortest, which can reduce the complexity of coupling assembly and the size of the entire module. The receiving photoelectric detection chip receives the optical signal using an end-face coupling method, which can reduce the vertical height of the entire module. The RF electrode of the receiving photodetection chip is located on the lower surface of the chip, and the RF electrode is welded to the upper surface of the first base, which can shorten the RF transmission path, place the bias circuit, matching circuit, and transimpedance amplifier chip as close to the photodetector as possible, reduce the influence of parasitic parameters on high-frequency performance, and achieve good high-frequency performance. The bottom solder ball of the bottom plate is welded to the external printed circuit board to transmit the RF signal of the electro-optical modulation chip, the output signal of the photodetection chip, the download signal of the control chip, the status signal of the control chip, etc., to avoid the transfer of the RF connector, which can reduce the size of the entire module and have the ability to be welded and integrated with the microwave circuit. The first base has a top cavity at the top, and the electro-optical modulation chip is mounted in the top cavity. The upper surface of the electro-optical modulation chip is flush with the upper surface of the top cavity, which reduces the distance between the RF port of the modulator chip and the metal via lead bonding of the first base, and improves the high-frequency performance of the electro-optical modulation chip. The RF load is integrated inside the chip to avoid the RF loss caused by welding the RF load on the first base and wire bonding with the RF load. At the same time, the shell is welded to the cover plate, the input optical fiber, the output optical fiber and the bottom plate to form a closed package with high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the three-dimensional structure of the low heat consumption transceiver module with co-packaged optoelectronic chips proposed by the present invention;

[0020] Figure 2 This is a schematic diagram of the structure of the electro-optical modulation chip of the low heat consumption transceiver module with co-packaged optoelectronic chips proposed by the present invention;

[0021] Figure 3 This is a schematic diagram of the structure of the first base and receiving photoelectric detection chip of the low heat consumption transceiver module co-packaged with the photoelectric chip proposed in the present invention;

[0022] Figure 4 This is a schematic diagram of the second base structure of the low heat consumption transceiver module co-packaged with the optoelectronic chip proposed in the present invention;

[0023] Figure 5 This is a schematic diagram of the bottom plate structure of the low heat consumption transceiver module with co-packaged optoelectronic chips proposed by the present invention.

[0024] Legend:

[0025] 1. Cover plate; 2. Electro-optic modulation chip; 21. Input optical coupling port; 22. RF input electrode; 23. Bias input electrode; 24. Output optical coupling port; 25. Monitoring optical coupling port; 26. RF load; 3. Monitoring photodetection chip; 31. Monitoring optical port; 32. Monitoring output port; 4. Receiving photodetection chip; 41. Photosensitive surface; 42. RF output electrode; 5. First base; 51. First base body; 52. Top cavity; 53. First bottom cavity; 54. Surface wiring of first base; 55. Metal via of first base; 6. Second base; 61. Second base body; 62. Second bottom Base metal via; 63, second base surface wiring; 64, matching load; 65, bias capacitor; 66, bias inductor; 67, second bottom cavity; 7, control chip; 71, monitoring input port; 72, bias output port; 73, download input port; 74, status output port; 8, transimpedance amplifier chip; 81, amplifier input port; 82, amplifier output port; 9, bottom plate; 91, bottom plate medium; 92, welding belt; 93, bottom plate surface wiring; 94, bottom plate metal via; 95, bottom solder ball; 10, tube shell; 11, first input optical fiber; 12, second input optical fiber; 13, output optical fiber. DETAILED DESCRIPTION

[0026] Reference Figure 1-5The low heat consumption transceiver module with optoelectronic chips co-packaged in the present invention comprises: a cover plate 1, an electro-optical modulation chip 2, a monitoring photoelectric detection chip 3, a receiving photoelectric detection chip 4, a first base 5, a second base 6, a control chip 7, a transimpedance amplifier chip 8, a bottom plate 9, a tube shell 10, a first input optical fiber 11, a second input optical fiber 12 and an output optical fiber 13; a top cavity 52 and a first bottom cavity 53 are arranged on the first base 5 in the vertical direction from top to bottom, the electro-optical modulation chip 2 and the receiving photoelectric detection chip 4 are bonded inside the top cavity 52, the monitoring photoelectric detection chip 3 is bonded on the top of the electro-optical modulation chip 2, the control chip 7 and the transimpedance amplifier chip 8 are welded on the top of the bottom plate 9, the center of the first input optical fiber 11 and the receiving photoelectric detection chip 4 are bonded to the top of the top cavity 52, and the monitoring photoelectric detection chip 3 is bonded on the top of the electro-optical modulation chip 2. The control chip 7 and the transimpedance amplifier chip 8 are welded on the top of the bottom plate 9. The center of the photosensitive surface 41 of the detection chip 4 coincides, the center of the second input optical fiber 12 coincides with the center of the input optical coupling port 21 of the electro-optical modulation chip 2, the input light of the second input optical fiber 12 is incident on the input optical coupling port 21 of the electro-optical modulation chip 2 through end face coupling, the center of the output optical coupling port 24 of the electro-optical modulation chip 2 coincides with the center of the output optical fiber 13, the output light of the output optical coupling port 24 of the electro-optical modulation chip 2 is incident on the output optical fiber 13 through end face coupling, the electro-optical modulation chip 2 is electrically connected to the control chip 7, the monitoring photodetection chip 3 is electrically connected to the control chip 7, and the receiving photodetection chip 4 is electrically connected to the transimpedance amplifier chip 8, so as to realize the bias control closed loop of the electro-optical modulation chip 2.

[0027] Specifically, Figure 1 and Figure 3 As shown, the first base 5 is on the top of the second base 6 by low temperature co-firing or welding, the second base 6 is welded to the top of the bottom plate 9, a tube shell 10 is welded on the upper surface of the bottom plate 9, and a chamber for accommodating the first base 5 and the second base 6 is provided on the tube shell 10, and a cover plate 1 is welded on the top of the tube shell 10.

[0028] In this embodiment, if Figure 1 As shown, the tube shell 10 is welded with the cover plate 1, the first input optical fiber 11, the second input optical fiber 12, the output optical fiber 13 and the bottom plate 9 to form a closed cavity.

[0029] Specifically, Figure 1 and Figure 4 As shown, the first bottom cavity 53 is connected with the top of the second base 6, and a second bottom cavity 67 is provided on the second base 6 in the vertical direction, and the second bottom cavity 67 is connected with the top of the bottom plate 9; a first input optical fiber 11, a second input optical fiber 12 and an output optical fiber 13 are welded on one side of the tube shell 10, and the first input optical fiber 11, the second input optical fiber 12 and the output optical fiber 13 all extend to the chamber of the tube shell 10 and are bonded to the inside of the top cavity 52, and the first input optical fiber 11, the second input optical fiber 12 and the output optical fiber 13 are welded on the tube shell 10 for closed packaging.

[0030] Specifically, Figure 1 and Figure 5 As shown, the base plate 9 includes a base plate medium 91, a welding belt 92, a base plate surface wiring 93, a base plate metal via 94, and a bottom solder ball 95; a plurality of base plate surface wirings 93 are arranged on the upper surface of the base plate medium 91, and a plurality of groups of base plate metal vias 94 are arranged in an array on the base plate medium 91, and the plurality of groups of base plate metal vias 94 are distributed in a vertical direction, and the bottom ends of the plurality of groups of base plate metal vias 94 are welded with bottom solder balls 95 one by one; the base plate surface wiring 93 is used for welding and installation of the second base 6, the control chip 7 and the transimpedance amplifier chip 8 and for signal transmission; the base plate metal vias 94 are used for signal transmission between the second base 6, the control chip 7 and the transimpedance amplifier chip 8 on the one hand, and the base plate metal vias 94 located below the control chip 7 and the transimpedance amplifier chip 8 on the other hand are used to form a heat dissipation channel.

[0031] In this embodiment, the bottom plate metal vias 94 located below the control chip 7 and the transimpedance amplifier chip 8 form a heat dissipation channel, which can dissipate heat from the control chip 7 and the transimpedance amplifier chip 8 .

[0032] In this embodiment, the bottom plate 9 can be made of high temperature co-fired ceramics, low temperature co-fired ceramics, composite dielectric substrates or a combination thereof. The bottom plate 9 is welded to the tube shell 10 via a welding strip 92 to form a closed cavity.

[0033] Specifically, Figure 3 As shown, the first base 5 includes a first base body 51, a top cavity 52, a first bottom cavity 53, a first base surface wiring 54 and a first base metal via 55; the upper surface of the first base body 51 is located on both sides of the top cavity 52 and is provided with multiple groups of first base surface wirings 54, the interior of the first base body 51 is located on both sides of the top cavity 52 and is provided with multiple groups of first base metal vias 55, and the multiple groups of first base metal vias 55 correspond one-to-one to the multiple groups of first base surface wirings 54, and the top of the first base metal via 55 is electrically connected to the first base surface wiring 54.

[0034] In this embodiment, the first base body 51 is made of low temperature co-fired ceramics.

[0035] Specifically, Figure 4As shown, the second base 6 includes a second base body 61, a second base metal via 62, a second base surface wiring 63, a matching load 64, a bias capacitor 65, a bias inductor 66 and a second bottom cavity 67; the bias capacitor 65 and the bias inductor 66 are welded on the upper surface of the second base body 61, and the bias capacitor 65 and the bias inductor 66 are connected by wire bonding. The bottom solder ball 95 on the bottom plate 9 feeds the bias voltage, which passes through the corresponding bottom plate metal via 94, the second base metal via 62, the second base surface wiring 63, the bias capacitor 65, the bias inductor 66, The first base metal via 55 and the first base surface wiring 54 provide a bias voltage to the receiving photodetection chip 4; the matching load 64 welded on the upper surface of the second base body 61 matches the RF output of the receiving photodetection chip 4 through the second base surface wiring 63, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 in sequence; the second bottom cavity 67 is used to accommodate the control chip 7 and the transimpedance amplifier chip 8, and the multiple second base metal vias 62 and the multiple second base surface wirings 63 of the second base 6 are used for signal transmission.

[0036] In this embodiment, the upper surface of the electro-optic modulation chip 2 is flush with the upper surface of the top cavity 52; the interface of the electro-optic modulation chip 2 includes an input optical coupling port 21, an RF input electrode 22, a bias input electrode 23, an output optical coupling port 24 and a monitoring optical coupling port 25; the input optical coupling port 21 and the output optical coupling port 24 are end-face coupling structures for optical coupling between the electro-optic modulation chip 2 and the input light and the output light, and the monitoring optical coupling port 25 is an arrayed waveguide grating or an on-chip optical reflection structure for vertical optical coupling between monitoring lights; the RF input electrode 22 is for loading RF signals Port, the bias input electrode 23 is the bias voltage loading port; the RF input electrode 22 and the bias input electrode 23 are respectively connected to the first base 5 by wire bonding, and the RF input electrode 22 is divided into two ends, one of which is connected to the external RF signal, and the external RF signal is fed in through the bottom solder ball 95 on the bottom plate 9, and is sequentially fed into the RF input electrode 22 through the bottom plate metal via 94 corresponding to the bottom solder ball 95, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 by wire bonding, and the other end is connected to the RF load 26 on the electro-optical modulation chip 2.

[0037] In this embodiment, the interface of the control chip 7 includes a monitoring input port 71, a bias output port 72, a download input port 73 and a status output port 74; the monitoring input port 71, the bias output port 72, the download input port 73 and the status output port 74 are respectively connected to the base plate 9 by wire bonding; the monitoring input port 71 is connected to the monitoring output port 32 of the monitoring photoelectric detection chip 3 by wire bonding through the base plate surface wiring 93, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 in sequence; the bias output port 72 is connected to the monitoring output port 32 of the monitoring photoelectric detection chip 3 by wire bonding in accordance with The bias input electrode 23 of the electro-optical modulation chip 2 is wire-bonded through the bottom plate surface wiring 93, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54; the download input port 73 is connected to the bottom solder ball 95 through the bottom plate surface wiring 93 and the bottom plate metal via 94 in turn, and the control program update and download signals are input through the bottom solder ball 95; the status output port 74 is connected to the bottom solder ball 95 through the bottom plate surface wiring 93 and the bottom plate metal via 94 in turn, and the status signal of the control chip 7 is output through the bottom solder ball 95.

[0038] In this embodiment, the interface of the transimpedance amplifier chip 8 includes an amplifier input port 81 and an amplifier output port 82. The amplifier input port 81 is electrically connected to the RF output electrode 42 of the receiving photodetection chip 4 through the bottom plate surface wiring 93, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 in sequence. The RF signal output by the receiving photodetection chip 4 is amplified by the transimpedance amplifier chip 8 and then output through the amplifier output port 82, the bottom plate surface wiring 93, the bottom plate metal via 94 and the bottom solder ball 95 in sequence.

[0039] In this embodiment, the interface of the monitoring photodetection chip 3 includes a monitoring optical port 31 and a monitoring output port 32. The monitoring optical port 31 is located on the lower surface of the monitoring photodetection chip 3, and the monitoring output port 32 is located on the upper surface of the monitoring photodetection chip 3; the monitoring optical port 31 of the monitoring photodetection chip 3 coincides with the monitoring optical coupling port 25 of the electro-optical modulation chip 2; the monitoring output port 32 is wire-bonded to the first base 5, and the monitoring output port 32 is wire-bonded to the monitoring input port 71 of the control chip 7 in sequence through the first base surface wiring 54, the first base metal via 55, the second base metal via 62 and the bottom plate surface wiring 93.

[0040] In this embodiment, the receiving photodetection chip 4 is bonded or welded to the upper surface of the first base 5, and the receiving photodetection chip 4 has a photosensitive surface 41 and a radio frequency output electrode 42; the photosensitive surface 41 is located on the side of the receiving photodetection chip 4, and the radio frequency output electrode 42 is located on the bottom surface of the receiving photodetection chip 4, and the radio frequency output electrode 42 is wire-bonded to the bias capacitor 65, the bias inductor 66 and the matching load 64 welded on the upper surface of the second base 6 through the first base surface wiring 54, the first base metal via 55 and the second base surface wiring 63 in sequence; the radio frequency output electrode 42 of the receiving photodetection chip 4 is wire-bonded to the amplification input port 81 of the transimpedance amplifier chip 8 through the first base surface wiring 54, the first base metal via 55, the second base metal via 62 and the bottom plate surface wiring 93 in sequence.

[0041] In the specific working process of the low heat consumption transceiver module of the optoelectronic chip co-package of this embodiment, the optoelectronic transceiver signal flow includes the following two aspects:

[0042] 1. Electro-optical modulation reception: The external input RF signal is fed in through the bottom solder ball 95 on the bottom plate 9, and is fed into the RF input electrode 22 through the bottom plate metal via 94, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 through wire bonding in sequence. The second input optical fiber 12 inputs the optical signal through the input optical coupling port 21, and is divided into two paths in the electro-optical modulation chip 2. The two optical signals are electro-optically converted through the RF input electrode 22 of the electro-optical modulation chip 2. After the two optical fields are coherent, they are divided into two outputs. One path is coupled into the output optical fiber 3 through the output optical coupling port 24 of the electro-optical modulation chip 2 for modulated optical signal output, completing the electro-optical modulation reception function; the other optical signal loaded with the RF signal is converted into an electrical signal output on the monitoring photoelectric detection chip 3 through the monitoring optical coupling port 25 of the electro-optical modulation chip 2. By controlling the bias voltage of the electro-optic modulator chip 2, the electro-optic modulator chip 2 can be adjusted to different bias operating points such as the orthogonal operating point (Quad+, Quad-), the maximum output point (Peak), the minimum output point (NULL), etc. Due to the characteristics of the electro-optic modulator chip 2 itself, the operating point of the electro-optic modulator chip 2 will slowly drift with the change of environmental factors such as temperature, resulting in the system indicators such as output optical power and radio frequency signal modulation efficiency also slowly drifting. In actual use, it is necessary to collect the monitoring signal output by the monitoring photoelectric detection chip 3 through the control chip 7, compare the monitoring signal with the bias operating point setting value, and adjust the bias output port 72 voltage of the control chip 7 according to the comparison result to form a closed-loop control, so as to achieve the bias operating point of the electro-optic modulator chip 2 is consistent with the program setting value. Commonly used electro-optic modulator chip 2 bias operating point control methods include bias control methods based on jamming signal monitoring and bias control methods based on output light intensity monitoring. The control program update and download of the control chip 7 is fed in through the bottom solder ball 95 of the bottom plate 9, and then transmitted to the download input port 73 of the control chip 7 through the bottom plate metal via 94 and the bottom plate surface wiring 93. The status output port 74 of the control chip 7 is connected to the bottom solder ball 95 through the bottom plate surface wiring 93 and the bottom plate metal via 94 in turn, and the status signal of the control chip 7 is output through the bottom solder ball 95.

[0043] 2. Photoelectric detection and emission: The optical signal input by the first input optical fiber 11 is converted into photoelectric signal by the receiving photoelectric detection chip 4, and a radio frequency emission signal is output. The radio frequency signal is sequentially input into the transimpedance amplifier chip 8 through the first base surface wiring 54, the first base metal via 55, the second base metal via 62, the bottom plate surface wiring 93 and the amplifier input port 81. The radio frequency signal amplified by the transimpedance amplifier chip 8 is sequentially output through the amplifier output port 82, the bottom plate surface wiring 93, the bottom plate metal via 94 and the bottom solder ball 95, and the amplified radio frequency emission signal is output, thereby completing the photoelectric detection and emission function.

[0044] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A low heat consumption transceiver module with co-packaged optoelectronic chips, characterized in that: include: A cover plate (1), an electro-optic modulation chip (2), a monitoring photoelectric detection chip (3), a receiving photoelectric detection chip (4), a first base (5), a second base (6), a control chip (7), a transimpedance amplifier chip (8), a bottom plate (9), a tube shell (10), a first input optical fiber (11), a second input optical fiber (12) and an output optical fiber (13); a top cavity (52) and a first bottom cavity (53) are sequentially arranged on the first base (5) from top to bottom in a vertical direction, the inside of the top cavity (52) is bonded with the electro-optic modulation chip (2) and the receiving photoelectric detection chip (4), the top of the electro-optic modulation chip (2) is bonded with the monitoring photoelectric detection chip (3), the top of the bottom plate (9) is welded with the control chip (7) and the transimpedance amplifier chip (8), the center of the first input optical fiber (11) and the optical fiber of the receiving photoelectric detection chip (4) are connected to each other, and the optical fiber (11) and the optical fiber (12) of the receiving photoelectric detection chip (4) are connected to each other. The center of the sensitive surface (41) coincides, the center of the second input optical fiber (12) coincides with the center of the input optical coupling port (21) of the electro-optic modulation chip (2), the input light of the second input optical fiber (12) is incident on the input optical coupling port (21) of the electro-optic modulation chip (2) through end face coupling, the center of the output optical coupling port (24) of the electro-optic modulation chip (2) coincides with the center of the output optical fiber (13), the output light of the output optical coupling port (24) of the electro-optic modulation chip (2) is incident on the output optical fiber (13) through end face coupling, the electro-optic modulation chip (2) is electrically connected to the control chip (7), the monitoring photoelectric detection chip (3) is electrically connected to the control chip (7), and the receiving photoelectric detection chip (4) is electrically connected to the transimpedance amplifier chip (8), so as to realize the bias control closed loop of the electro-optic modulation chip (2).

2. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 1, characterized in that: The first base (5) is mounted on the top of the second base (6) by low temperature co-firing or welding, the second base (6) is welded to the top of the bottom plate (9), a tube shell (10) is welded to the upper surface of the bottom plate (9), and a chamber capable of accommodating the first base (5) and the second base (6) is provided on the tube shell (10), and a cover plate (1) is welded to the top of the tube shell (10).

3. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 1, characterized in that: The first bottom cavity (53) is connected to the top of the second base (6); a second bottom cavity (67) is arranged on the second base (6) in a vertical direction, and the second bottom cavity (67) is connected to the top of the bottom plate (9); a first input optical fiber (11), a second input optical fiber (12) and an output optical fiber (13) are welded to one side of the tube shell (10); the first input optical fiber (11), the second input optical fiber (12) and the output optical fiber (13) all extend to the chamber of the tube shell (10) and are bonded to the inside of the top cavity (52); the first input optical fiber (11), the second input optical fiber (12) and the output optical fiber (13) are welded to the tube shell (10) for sealed packaging.

4. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 3, characterized in that: The base plate (9) comprises a base plate medium (91), a welding strip (92), a base plate surface wiring (93), a base plate metal via (94), and a bottom solder ball (95); a plurality of base plate surface wirings (93) are arranged on the upper surface of the base plate medium (91); a plurality of groups of base plate metal vias (94) are arranged in an array on the base plate medium (91), and the plurality of groups of base plate metal vias (94) are distributed in a vertical direction; bottom ends of the plurality of groups of base plate metal vias (94) are welded with bottom solder balls (95) in a one-to-one correspondence; the base plate surface wiring (93) is used for welding and mounting of the second base (6), the control chip (7), and the transimpedance amplifier chip (8) and for signal transmission; the base plate metal vias (94) are used for signal transmission between the second base (6), the control chip (7), and the transimpedance amplifier chip (8), and the base plate metal vias (94) located below the control chip (7) and the transimpedance amplifier chip (8) are used to form a heat dissipation channel.

5. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 4, characterized in that: The first base (5) comprises a first base body (51), a top cavity (52), a first bottom cavity (53), a first base surface wiring (54) and a first base metal via (55); the upper surface of the first base body (51) is located on both sides of the top cavity (52) and is provided with a plurality of first base surface wirings (54); the interior of the first base body (51) is located on both sides of the top cavity (52) and is provided with a plurality of first base metal vias (55); the plurality of first base metal vias (55) correspond one-to-one to the plurality of first base surface wirings (54); and the top of the first base metal via (55) is electrically connected to the first base surface wiring (54).

6. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 5, characterized in that: The second base (6) comprises a second base body (61), a second base metal via (62), a second base surface wiring (63), a matching load (64), a bias capacitor (65), a bias inductor (66) and a second bottom cavity (67); the bias capacitor (65) and the bias inductor (66) are welded on the upper surface of the second base body (61), the bias capacitor (65) and the bias inductor (66) are connected by wire bonding, and the bottom solder ball (95) on the bottom plate (9) feeds a bias voltage, which is sequentially passed through the corresponding bottom plate metal via (94), the second base metal via (62), the second base surface wiring (63), the bias capacitor (65), the bias inductor (66), the first base metal via (55) and the first base surface wiring (54) to provide a bias voltage to the receiving photodetection chip (4); The matching load (64) welded on the upper surface of the second base body (61) matches the radio frequency output of the receiving photoelectric detection chip (4) through the second base surface wiring (63), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54) in sequence; the second bottom cavity (67) is used to accommodate the control chip (7) and the transimpedance amplifier chip (8), and the multiple second base metal vias (62) and the multiple second base surface wiring (63) of the second base (6) are used for signal transmission.

7. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 6, characterized in that: The upper surface of the electro-optic modulation chip (2) is flush with the upper surface of the top cavity (52); the interface of the electro-optic modulation chip (2) includes an input light coupling port (21), a radio frequency input electrode (22), a bias input electrode (23), an output light coupling port (24) and a monitoring light coupling port (25); the input light coupling port (21) and the output light coupling port (24) are end face coupling structures, used for optical coupling between the electro-optic modulation chip (2) and the input light and the output light; the monitoring light coupling port (25) is an arrayed waveguide grating or an on-chip optical reflection structure, used for vertical optical coupling between monitoring lights; the radio frequency input electrode (22) is a radio frequency signal loading port, the bias input electrode (23) is a bias input electrode ...) are end face coupling structures, used for optical coupling between the electro-optic modulation chip (2) and the input light and the output light; the monitoring light coupling port (25) is an arrayed waveguide grating or an on-chip optical reflection structure, used for vertical optical coupling between monitoring lights; the radio frequency input electrode (22) is a radio frequency signal loading port, the bias input electrode (23) is a bias input electrode (24) and a monitoring light coupling port (25) are end face coupling structures, used for optical coupling between the electro-optic modulation chip (2) and the input light and the output light; the monitoring light coupling port (25) is an arrayed waveguide grating or an on-chip optical reflection structure, used for vertical optical coupling The input electrode (23) is a bias voltage loading port; the radio frequency input electrode (22) and the bias input electrode (23) are respectively connected to the first base (5) by wire bonding, and the radio frequency input electrode (22) is divided into two ends, one of which is connected to an external radio frequency signal, and the external radio frequency signal is fed in through a bottom solder ball (95) on a bottom plate (9), and is sequentially fed into the radio frequency input electrode (22) through a bottom plate metal via (94) corresponding to the bottom solder ball (95), a second base metal via (62), a first base metal via (55) and a first base surface wiring (54) by wire bonding, and the other end is connected to a radio frequency load (26) on an electro-optic modulation chip (2).

8. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 6, characterized in that: The interface of the control chip (7) comprises a monitoring input port (71), a bias output port (72), a download input port (73) and a status output port (74); the monitoring input port (71), the bias output port (72), the download input port (73) and the status output port (74) are respectively connected to the base plate (9) by wire bonding; the monitoring input port (71) is connected to the monitoring output port (32) of the monitoring photoelectric detection chip (3) by wire bonding in sequence through the base plate surface wiring (93), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54); the bias output port (72) is connected to the monitoring output port (32) of the monitoring photoelectric detection chip (3) by wire bonding in sequence through the base plate surface wiring (93), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54); The bias input electrode (23) of the electro-optic modulation chip (2) is wire-bonded through the bottom plate surface wiring (93), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54); the download input port (73) is connected to the bottom solder ball (95) through the bottom plate surface wiring (93) and the bottom plate metal via (94) in sequence, and the control program update and download signals are input through the bottom solder ball (95); the status output port (74) is connected to the bottom solder ball (95) through the bottom plate surface wiring (93) and the bottom plate metal via (94) in sequence, and the status signal of the control chip (7) is output through the bottom solder ball (95).

9. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 6, characterized in that: The interface of the transimpedance amplifier chip (8) comprises an amplifier input port (81) and an amplifier output port (82); the amplifier input port (81) is electrically connected to the radio frequency output electrode (42) of the receiving photodetection chip (4) through the bottom plate surface wiring (93), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54) in sequence, and receives the radio frequency signal output by the photodetection chip (4), which is amplified by the transimpedance amplifier chip (8) and then outputted through the amplifier output port (82), the bottom plate surface wiring (93), the bottom plate metal via (94) and the bottom solder ball (95) in sequence.

10. The low heat consumption transceiver module with co-packaged optoelectronic chips according to claim 6, characterized in that: The monitoring photoelectric detection chip (3) interface comprises a monitoring optical port (31) and a monitoring output port (32), wherein the monitoring optical port (31) is located on the lower surface of the monitoring photoelectric detection chip (3), and the monitoring output port (32) is located on the upper surface of the monitoring photoelectric detection chip (3); The monitoring optical port (31) of the monitoring photoelectric detection chip (3) overlaps with the monitoring optical coupling port (25) of the electro-optical modulation chip (2); the monitoring output port (32) is wire-bonded to the first base (5), and the monitoring output port (32) is wire-bonded to the monitoring input port (71) of the control chip (7) in sequence through the first base surface wiring (54), the first base metal via (55), the second base metal via (62) and the bottom plate surface wiring (93); The receiving photodetection chip (4) is bonded or welded to the upper surface of the first base (5), and the receiving photodetection chip (4) has a photosensitive surface (41) and a radio frequency output electrode (42); the photosensitive surface (41) is located on the side of the receiving photodetection chip (4), and the radio frequency output electrode (42) is located on the bottom surface of the receiving photodetection chip (4); the radio frequency output electrode (42) is wire-bonded to a bias capacitor (65), a bias inductor (66) and a matching load (64) welded on the upper surface of the second base (6) through first base surface wiring (54), first base metal vias (55) and second base surface wiring (63) in sequence; the radio frequency output electrode (42) of the receiving photodetection chip (4) is wire-bonded to an amplification input port (81) of a transimpedance amplifier chip (8) through first base surface wiring (54), first base metal vias (55), second base metal vias (62) and bottom plate surface wiring (93) in sequence.

Images